CN110600599A - Flip LED chip for backlight display and manufacturing method thereof - Google Patents
Flip LED chip for backlight display and manufacturing method thereof Download PDFInfo
- Publication number
- CN110600599A CN110600599A CN201910962624.4A CN201910962624A CN110600599A CN 110600599 A CN110600599 A CN 110600599A CN 201910962624 A CN201910962624 A CN 201910962624A CN 110600599 A CN110600599 A CN 110600599A
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode
- passivation
- reflection
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000002161 passivation Methods 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 229910052594 sapphire Inorganic materials 0.000 claims description 23
- 239000010980 sapphire Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 16
- 229910052681 coesite Inorganic materials 0.000 claims description 13
- 229910052906 cristobalite Inorganic materials 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 229910052682 stishovite Inorganic materials 0.000 claims description 13
- 229910052905 tridymite Inorganic materials 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 229910052593 corundum Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 8
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000000149 argon plasma sintering Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000007788 roughening Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- 230000006872 improvement Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 235000009537 plain noodles Nutrition 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a flip LED chip for backlight display and a manufacturing method thereof, wherein the chip comprises a transfer substrate, a first passivation layer, a first reflecting layer, an epitaxial layer, a second reflecting layer, a second passivation layer, a first electrode and a second electrode, the first passivation layer is arranged between the transfer substrate and the first reflecting layer so as to fix the transfer substrate on the first reflecting layer, the epitaxial layer is arranged on the first reflecting layer, the second reflecting layer is arranged on the epitaxial layer, the second passivation layer is arranged on the second reflecting layer, the first electrode is in conductive connection with the first reflecting layer, the second electrode is in conductive connection with the second reflecting layer, and light emitted by the epitaxial layer is emitted from the side face of the chip after being reflected by the first reflecting layer and the second reflecting layer. According to the invention, the first reflecting layer and the second reflecting layer are arranged on two sides of the epitaxial layer, so that light emitted by the epitaxial layer is reflected back and forth, side light emission is increased, and higher light emitting efficiency is obtained.
Description
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a flip LED chip for backlight display and a manufacturing method thereof.
Background
The flip LED chip is a new type LED in recent years, has the main functions of no packaging process, greatly saves the production efficiency, can be applied to large current and can realize an ultra-micro mini type LED.
Referring to fig. 1, a conventional flip LED chip includes an AlN layer 11, a buffer layer 12, an epitaxial layer 20, a transparent conductive layer 30, a reflective layer 40, a barrier layer 50, a passivation layer 60, a first electrode 71 and a second electrode 72, which are sequentially disposed on a substrate 10, where a light emitting surface of the conventional flip LED chip is a substrate side, an existing substrate is generally a sapphire substrate, the epitaxial layer is made of a gallium nitride material, and in order to reduce lattice mismatch between the sapphire substrate and the epitaxial layer, structures such as the AlN layer and the buffer layer need to be formed on the sapphire substrate before the epitaxial layer is formed, which are collectively referred to as bulk materials, and these bulk materials can absorb light emitted from the epitaxial layer, thereby reducing light emitting efficiency of the chip.
In addition, current LED backlight display forms by many flip-chip LED chips concatenation, because flip-chip LED chip's play plain noodles concentrates on substrate one side outgoing, is applied to the flip-chip LED chip that is shaded and shows, if backlight display wants the light-emitting even, the distance between the adjacent LED chip will be enough little, and this just needs a large amount of flip-chip LED chips to assemble, and is with higher costs.
Disclosure of Invention
The invention aims to solve the technical problem of providing a flip LED chip for backlight display and a manufacturing method thereof, wherein the light emitting efficiency of the chip is high.
In order to solve the above technical problem, the present invention provides a flip LED chip for backlight display, comprising: the transfer substrate, the first passivation layer, the first reflection layer, the epitaxial layer, the second reflection layer, the second passivation layer, the first electrode and the second electrode are arranged between the transfer substrate and the first reflection layer, so that the transfer substrate is fixed on the first reflection layer, the epitaxial layer is arranged on the first reflection layer, the second reflection layer is arranged on the epitaxial layer, the second passivation layer is arranged on the second reflection layer, the first electrode and the second electrode penetrate through the second passivation layer, the first electrode is in conductive connection with the first reflection layer, the second electrode is in conductive connection with the second reflection layer, and light emitted by the epitaxial layer is emitted from the side face of the chip after being reflected by the first reflection layer and the second reflection layer.
As an improvement of the above scheme, the light-emitting diode further comprises a transparent conductive layer, wherein the transparent conductive layer is arranged between the first reflecting layer and the epitaxial layer;
the epitaxial layer comprises an N-GaN layer, an MQW layer and a P-GaN layer which are sequentially arranged, the N-GaN layer is arranged between the MQW layer and the second reflecting layer, and the P-GaN layer is arranged between the MQW layer and the transparent conducting layer.
As an improvement of the above aspect, the first reflective layer includes a first metal reflective layer and a first blocking layer, the second reflective layer includes a second metal reflective layer and a second blocking layer, the first blocking layer is disposed between the first metal reflective layer and the first passivation layer, and the second blocking layer is disposed between the second metal reflective layer and the second passivation layer.
As an improvement of the above scheme, the first metal reflective layer and the second metal reflective layer are both provided with a graphical structure for adjusting the light-emitting angle and the light-emitting shape of the chip;
the first metal reflecting layer and the second metal reflecting layer are both made of Ag or Al, and the thickness of the first metal reflecting layer and the thickness of the second metal reflecting layer are 1000-3000 angstroms.
As an improvement of the above scheme, the first passivation layer is made of SiO2Or Al2O3The thickness is 4000-8000 angstrom;
the second passivation layer is made of SiO2、Al2O3Or SiNx with a thickness of 6000-10000 angstrom;
the transfer substrate is a sapphire substrate.
Correspondingly, the invention also provides a manufacturing method of the flip LED chip for backlight display, which comprises the following steps:
sequentially forming an AlN layer, a buffer layer, an epitaxial layer, a first reflecting layer and a first bonding layer on a sapphire substrate;
forming a second bonding layer on the transfer substrate;
bonding the first bonding layer and the second bonding layer to form a first passivation layer so as to fix the transfer substrate on the transparent conductive layer;
removing the sapphire substrate, the AlN layer and the buffer layer to expose the epitaxial layer;
sequentially forming a first reflecting layer and a second passivation layer on the exposed epitaxial layer;
etching the second passivation layer to the second reflection layer to form a first hole;
etching the second passivation layer until reaching the first reflection layer to form a second hole;
and depositing metal in the first hole to form a first electrode, and depositing metal in the second hole to form a second electrode.
As an improvement of the above scheme, the first bonding layer and the second bonding layer are made of SiO2Or Al2O3The thickness is 2000-4000 angstroms; introduction of NH3And H2O2And (3) steam, and bonding the first bonding layer and the second bonding layer for 60-90 minutes at the temperature of 280-350 ℃ and the pressure of 1800-2500N to form a first passivation layer.
As an improvement of the scheme, the sapphire substrate is removed by adopting a stripping method, wherein the stripping method comprises laser sintering, dry etching and grinding; and removing the AlN layer and the buffer layer by adopting a dry etching method, and roughening the exposed epitaxial layer to form a patterned structure.
As an improvement of the above aspect, after the first electrode and the second electrode are formed, the method further includes the steps of:
forming a third passivation layer on the first electrode, the second electrode and the second passivation layer;
etching the third passivation layer to expose the first electrode and the second electrode;
and forming a third electrode and a fourth electrode on the third passivation layer, wherein the third electrode is connected with the first electrode, and the fourth electrode is connected with the second electrode.
As an improvement of the scheme, the third passivation layer is made of SiO2、Al2O3Or SiNx with a thickness of 6000-10000 angstrom; the third electrode and the fourth electrode have the same area.
The implementation of the invention has the following beneficial effects:
according to the flip LED chip for backlight display, the first reflecting layer and the second reflecting layer are arranged on the two sides of the epitaxial layer, light emitted by the epitaxial layer is reflected back and forth, side light emitting is increased, and higher light emitting efficiency is obtained.
In addition, the transfer substrate is arranged on the first reflecting layer, light emitted by the epitaxial layer is directly emitted from the side face of the chip after being reflected by the first reflecting layer and the second reflecting layer, compared with the traditional flip LED chip, the light absorption influence of a large number of body materials such as an AlN layer and a buffer layer is reduced, and the light emitting efficiency can be improved by more than 2%.
Furthermore, the first metal reflecting layer and the second metal reflecting layer which are arranged on the two sides of the epitaxial layer are provided with graphical structures, so that the light-emitting angle and the light-emitting shape of the flip chip can be effectively and controllably adjusted, the use amount of LED chips can be obviously reduced in backlight application, the backlight uniformity is improved, and the thickness of a liquid crystal display device is reduced.
Drawings
FIG. 1 is a schematic diagram of a conventional flip-chip LED chip;
FIG. 2 is a schematic diagram of a flip-chip LED chip according to the present invention;
FIG. 3 is a schematic light extraction diagram of FIG. 2;
FIG. 4a is a schematic diagram of the present invention after forming a first bonding layer on a sapphire substrate;
FIG. 4b is a schematic diagram of the present invention forming a second bonding layer on a transfer substrate;
FIG. 4c is a schematic illustration of a transfer substrate of the present invention bonded to a transparent conductive layer;
FIG. 4d is a schematic view of the present invention after removal of the sapphire substrate, AlN layer and buffer layer;
FIG. 4e is a schematic representation of the present invention after forming a reflective layer, a barrier layer and a second passivation layer;
fig. 5 is a schematic structural diagram of another embodiment of a flip LED chip of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 2, the present invention provides a flip LED chip for backlight display, including: the transfer substrate 1, the first passivation layer 2, the first reflection layer 3, the epitaxial layer 5, the second reflection layer 6, the second passivation layer 71, the first electrode 81 and the second electrode 82, the first passivation layer 2 is disposed between the transfer substrate 1 and the first reflection layer 3 to fix the transfer substrate 1 on the first reflection layer 3, the epitaxial layer 5 is disposed on the first reflection layer 3, the second reflection layer 6 is disposed on the epitaxial layer 5, the second passivation layer 71 is disposed on the second reflection layer 6, the first electrode 81 and the second electrode 82 penetrate through the second passivation layer 71, the first electrode 81 is in conductive connection with the first reflection layer 3, and the second electrode 82 is in conductive connection with the second reflection layer 6, wherein light emitted from the epitaxial layer 5 is emitted from the side surface of the chip after being reflected by the first reflection layer 3 and the second reflection layer 6.
The chip of the invention further comprises a transparent conductive layer 4 for enhancing the current spreading properties of the chip, said transparent conductive layer 4 being arranged between the first reflective layer 3 and the epitaxial layer 5.
Specifically, the epitaxial layer 5 comprises an N-GaN layer 51, an MQW layer 52 and a P-GaN layer 53 which are arranged in sequence, wherein the N-GaN layer 51 is arranged between the MQW layer 52 and the second reflecting layer 6, and the P-GaN layer 53 is arranged between the MQW layer 52 and the transparent conducting layer 4.
The first reflective layer 3 of the present invention includes a first metallic reflective layer 31 and a first barrier layer 32, and the second reflective layer 6 includes a second metallic reflective layer 61 and a second barrier layer 62. The first barrier layer 32 and the first metal reflective layer 31 and the first passivation layer 2, and the second barrier layer 62 is disposed between the second metal reflective layer 61 and the second passivation layer 71.
Preferably, the first metal reflective layer 31 and the second metal reflective layer 61 are both provided with a patterned structure for adjusting the light-emitting angle and the light-emitting shape of the chip.
In order to improve the reflection efficiency, the first metal reflection layer 31 and the second metal reflection layer are both made of Ag or Al and have a thickness of 1000-3000 angstroms. The first barrier layer and the second barrier layer are used for blocking metal diffusion of the first metal reflecting layer and the second metal reflecting layer, and the protective effect is achieved.
In other embodiments of the present invention, the first reflective layer and the second reflective layer may also be bragg reflective layers.
Referring to fig. 3, the flip LED chip for backlight display according to the present invention includes a first reflective layer and a second reflective layer disposed on two sides of an epitaxial layer to reflect light emitted from the epitaxial layer back and forth, so as to increase side light emission and obtain higher light emission efficiency.
In addition, the transfer substrate is arranged on the first reflecting layer, light emitted by the epitaxial layer is directly emitted from the side face of the chip after being reflected by the first reflecting layer and the second reflecting layer, compared with the traditional flip LED chip, the light absorption influence of a large number of body materials such as an AlN layer and a buffer layer is reduced, and the light emitting efficiency can be improved by more than 2%.
Furthermore, the first metal reflecting layer and the second metal reflecting layer which are arranged on the two sides of the epitaxial layer are provided with graphical structures, so that the light-emitting angle and the light-emitting shape of the flip chip can be effectively and controllably adjusted, the use amount of LED chips can be obviously reduced in backlight application, the backlight uniformity is improved, and the thickness of a liquid crystal display device is reduced.
The transfer substrate of the present invention is bonded to the first reflective layer to support the epitaxial layer. Preferably, the transfer substrate is made of a high light transmittance material, and the transfer substrate is preferably a sapphire substrate. Further, the transfer substrate may also be a glass sheet, a quartz sheet, or the like.
The invention fixes a transfer substrate on a first reflective layer through a first passivation layer. Preferably, the first passivation layer is made of SiO2Or Al2O3The thickness of the product is 4000-8000 angstrom. Wherein, SiO2Easy to obtain, low cost, and easy to bond the transfer substrate to the first reflective layer.
It should be noted that if the thickness of the first passivation layer is less than 4000 angstroms, the bonding force between the transfer substrate and the first reflective layer is affected; if the thickness of the first passivation layer is greater than 8000 angstroms, the thickness is too thick, which affects the light extraction efficiency. The first passivation layer within the thickness range can well fix the transfer substrate on the first reflection layer, and the light extraction efficiency is not influenced.
The second passivation layer of the present invention is used to isolate the first electrode from the second electrode, and preferably, the second passivation layer is made of SiO2、Al2O3Or SiNx with a thickness of 6000-10000 angstroms.
Correspondingly, the invention also provides a manufacturing method of the flip LED chip for backlight display, which comprises the following steps:
referring to fig. 4a, an AlN layer 91, a buffer layer 92, an epitaxial layer 5, a transparent conductive layer 4, a first metal reflective layer 31, a first barrier layer 32, and a first bonding layer 21 are sequentially formed on a sapphire substrate 9.
Specifically, the epitaxial layer 5 comprises an N-GaN layer 51, an MQW layer 52 and a P-GaN layer 53 which are sequentially arranged on the sapphire substrate 9.
Referring to fig. 4b, a second bonding layer 22 is formed on the transfer substrate 1. Preferably, the first bonding layer and the second bonding layer are made of SiO2Or Al2O3The thickness of the material is 2000-4000 angstroms.
Referring to fig. 4c, the first bonding layer 21 and the second bonding layer 22 are bonded to form a first passivation layer 2 to fix the transfer substrate 1 on the first barrier layer 32. Specifically, NH is introduced3And H2O2And (3) steam, and bonding the first bonding layer and the second bonding layer for 60-90 minutes at the temperature of 280-350 ℃ and the pressure of 1800-2500N to form a first passivation layer.
Referring to fig. 4d, the sapphire substrate 9, the AlN layer 91, and the buffer layer 92 are removed to expose the N-GaN layer 51. Specifically, the sapphire substrate is removed by adopting a stripping method, wherein the stripping method comprises laser sintering, dry etching and grinding; and removing the AlN layer and the buffer layer by adopting a dry etching method, and roughening the exposed epitaxial layer to form a patterned structure. According to the invention, the N-GaN is coarsened, the incident angle is changed, the mirror reflection effect is avoided, the side light emission is increased, and the higher light emitting efficiency is obtained.
Note that the sapphire substrate peeled off can be reused as a transfer substrate.
Referring to fig. 4e, a second metal reflective layer 61, a second barrier layer 62, and a second passivation layer 71 are sequentially formed on the exposed N-GaN layer 51.
The second passivation layer is made of SiO2、Al2O3Or SiNx with a thickness of 6000-10000 angstroms. The second passivation layer isolates the first electrode from the second electrode.
Referring to fig. 2, the second passivation layer 71 is etched until the first metal barrier layer 31 is etched, so as to form a first hole; etching the second passivation layer 71 to the second metal reflection layer 62 to form a second hole; a first electrode 81 is formed by depositing metal in the first hole and a second electrode 82 is formed by depositing metal in the second hole.
After the first electrode and the second electrode are formed, the method further includes the steps of: referring to fig. 5, a third passivation layer 72 is formed on the first electrode 81, the second electrode 82, and the second passivation layer 71; etching the third passivation layer 72 to expose the first electrode 81 and the second electrode 82; a third electrode 83 and a fourth electrode 84 are formed on the third passivation layer 72, the third electrode 83 being connected to the first electrode 81, and the fourth electrode 84 being connected to the second electrode 82. For the convenience of packaging, the third electrode 83 and the fourth electrode 84 have the same area.
According to the invention, the original sapphire substrate of the chip is stripped to remove a large amount of bulk materials such as the AlN layer and the buffer layer between the sapphire substrate and the epitaxial layer, so that the light emitted by the epitaxial layer is prevented from being absorbed by the materials, and the light emitting efficiency of the chip is improved. And then, bonding a new transfer substrate on the first reflecting layer through a bonding technology to support the epitaxial layer.
Because the thickness of the chip after the substrate is stripped is only about 6 mu m, the epitaxial layer is too thin and has no support, the chip is easy to crack, and meanwhile, the chip cannot be transferred and cannot be tested and sorted.
According to the invention, the first reflecting layer and the second reflecting layer are arranged on two sides of the epitaxial layer, so that light emitted by the epitaxial layer is reflected back and forth, side light emission is increased, and higher light emitting efficiency is obtained.
In addition, the transfer substrate is arranged on the first reflecting layer, light emitted by the epitaxial layer is directly emitted from the side face of the chip after being reflected by the first reflecting layer and the second reflecting layer, compared with the traditional flip LED chip, the light absorption influence of a large number of body materials such as an AlN layer and a buffer layer is reduced, and the light emitting efficiency can be improved by more than 2%.
Furthermore, the first metal reflecting layer and the second metal reflecting layer which are arranged on the two sides of the epitaxial layer are provided with graphical structures, so that the light-emitting angle and the light-emitting shape of the flip chip can be effectively and controllably adjusted, the use amount of LED chips can be obviously reduced in backlight application, the backlight uniformity is improved, and the thickness of a liquid crystal display device is reduced.
Preferably, the transfer substrate is made of a high light transmittance material, and the transfer substrate is preferably a sapphire substrate. The original sapphire substrate stripped from the chip can be used as a transfer substrate for repeated use. Further, the transfer substrate may also be a glass sheet, a quartz sheet, or the like.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (10)
1. A flip LED chip for backlighting a display, comprising: the transfer substrate, the first passivation layer, the first reflection layer, the epitaxial layer, the second reflection layer, the second passivation layer, the first electrode and the second electrode are arranged between the transfer substrate and the first reflection layer, so that the transfer substrate is fixed on the first reflection layer, the epitaxial layer is arranged on the first reflection layer, the second reflection layer is arranged on the epitaxial layer, the second passivation layer is arranged on the second reflection layer, the first electrode and the second electrode penetrate through the second passivation layer, the first electrode is in conductive connection with the first reflection layer, the second electrode is in conductive connection with the second reflection layer, and light emitted by the epitaxial layer is emitted from the side face of the chip after being reflected by the first reflection layer and the second reflection layer.
2. The flip LED chip for a backlight display of claim 1, further comprising a transparent conductive layer disposed between the first reflective layer and the epitaxial layer;
the epitaxial layer comprises an N-GaN layer, an MQW layer and a P-GaN layer which are sequentially arranged, the N-GaN layer is arranged between the MQW layer and the second reflecting layer, and the P-GaN layer is arranged between the MQW layer and the transparent conducting layer.
3. The flip LED chip for a backlight display of claim 1 or 2, wherein the first reflective layer comprises a first metallic reflective layer and a first barrier layer, the second reflective layer comprises a second metallic reflective layer and a second barrier layer, the first barrier layer is disposed between the first metallic reflective layer and the first passivation layer, and the second barrier layer is disposed between the second metallic reflective layer and the second passivation layer.
4. The flip LED chip for backlight display of claim 3, wherein the first and second metal reflective layers are each provided with a patterned structure for adjusting the light-emitting angle and the light-emitting shape of the chip;
the first metal reflecting layer and the second metal reflecting layer are both made of Ag or Al, and the thickness of the first metal reflecting layer and the thickness of the second metal reflecting layer are 1000-3000 angstroms.
5. The flip LED chip for backlighting of claim 1, wherein the first passivation layer is formed of SiO2Or Al2O3The thickness is 4000-8000 angstrom;
the second passivation layer is made of SiO2、Al2O3Or SiNx with a thickness of 6000-10000 angstrom;
the transfer substrate is a sapphire substrate.
6. The method for manufacturing the flip LED chip for the backlight display according to any one of claims 1 to 5, comprising:
sequentially forming an AlN layer, a buffer layer, an epitaxial layer, a first reflecting layer and a first bonding layer on a sapphire substrate;
forming a second bonding layer on the transfer substrate;
bonding the first bonding layer and the second bonding layer to form a first passivation layer so as to fix the transfer substrate on the transparent conductive layer;
removing the sapphire substrate, the AlN layer and the buffer layer to expose the epitaxial layer;
sequentially forming a first reflecting layer and a second passivation layer on the exposed epitaxial layer;
etching the second passivation layer to the second reflection layer to form a first hole;
etching the second passivation layer until reaching the first reflection layer to form a second hole;
and depositing metal in the first hole to form a first electrode, and depositing metal in the second hole to form a second electrode.
7. The method of fabricating the flip-chip LED chip for backlight display of claim 6, wherein the first and second bonding layers are made of SiO2Or Al2O3The thickness is 2000-4000 angstroms; introduction of NH3And H2O2And (3) steam, and bonding the first bonding layer and the second bonding layer for 60-90 minutes at the temperature of 280-350 ℃ and the pressure of 1800-2500N to form a first passivation layer.
8. The method of claim 6, wherein the sapphire substrate is removed by lift-off, the lift-off method comprising laser sintering, dry etching and grinding; and removing the AlN layer and the buffer layer by adopting a dry etching method, and roughening the exposed epitaxial layer to form a patterned structure.
9. The method of fabricating the flip LED chip for backlight display of claim 6, further comprising the steps of, after forming the first electrode and the second electrode:
forming a third passivation layer on the first electrode, the second electrode and the second passivation layer;
etching the third passivation layer to expose the first electrode and the second electrode;
and forming a third electrode and a fourth electrode on the third passivation layer, wherein the third electrode is connected with the first electrode, and the fourth electrode is connected with the second electrode.
10. The method of fabricating the flip LED chip for backlight display of claim 9, wherein the third passivation layer is made of SiO2、Al2O3Or SiNx with a thickness of 6000-10000 angstrom; the third electrode and the fourth electrode have the same area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910962624.4A CN110600599A (en) | 2019-10-11 | 2019-10-11 | Flip LED chip for backlight display and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910962624.4A CN110600599A (en) | 2019-10-11 | 2019-10-11 | Flip LED chip for backlight display and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110600599A true CN110600599A (en) | 2019-12-20 |
Family
ID=68866493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910962624.4A Pending CN110600599A (en) | 2019-10-11 | 2019-10-11 | Flip LED chip for backlight display and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110600599A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101599523A (en) * | 2009-06-01 | 2009-12-09 | 广东昭信光电科技有限公司 | The light emitting diode (LED) chip with vertical structure and the manufacture method thereof that adopt conducting polymer to shift |
| CN101872813A (en) * | 2009-04-24 | 2010-10-27 | 刘胜 | Light-emitting diode chip and manufacturing method thereof |
| CN204029800U (en) * | 2014-08-21 | 2014-12-17 | 安徽三安光电有限公司 | White light emitting device |
| CN107994132A (en) * | 2017-11-29 | 2018-05-04 | 李国强 | A kind of side light extraction OLED for mobile phone display screen |
| CN109004076A (en) * | 2017-06-21 | 2018-12-14 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN209312789U (en) * | 2019-01-31 | 2019-08-27 | 晶宇光电（厦门）有限公司 | A kind of LED chip and LED display |
| CN210379105U (en) * | 2019-10-11 | 2020-04-21 | 佛山市国星半导体技术有限公司 | Flip LED chip for backlight display |
-
2019
- 2019-10-11 CN CN201910962624.4A patent/CN110600599A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101872813A (en) * | 2009-04-24 | 2010-10-27 | 刘胜 | Light-emitting diode chip and manufacturing method thereof |
| CN101599523A (en) * | 2009-06-01 | 2009-12-09 | 广东昭信光电科技有限公司 | The light emitting diode (LED) chip with vertical structure and the manufacture method thereof that adopt conducting polymer to shift |
| CN204029800U (en) * | 2014-08-21 | 2014-12-17 | 安徽三安光电有限公司 | White light emitting device |
| CN109004076A (en) * | 2017-06-21 | 2018-12-14 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN107994132A (en) * | 2017-11-29 | 2018-05-04 | 李国强 | A kind of side light extraction OLED for mobile phone display screen |
| CN209312789U (en) * | 2019-01-31 | 2019-08-27 | 晶宇光电（厦门）有限公司 | A kind of LED chip and LED display |
| CN210379105U (en) * | 2019-10-11 | 2020-04-21 | 佛山市国星半导体技术有限公司 | Flip LED chip for backlight display |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10658545B2 (en) | Light emitting device in which light emitting element and light transmissive member are directly bonded | |
| JP4777141B2 (en) | Vertical structure nitride semiconductor light emitting device with improved light extraction efficiency | |
| US6878563B2 (en) | Radiation-emitting semiconductor element and method for producing the same | |
| TWI420693B (en) | Light emitting device and fabrication thereof | |
| JP5727320B2 (en) | AlGaInN-based LED with epitaxial layer | |
| JP3326545B2 (en) | Semiconductor light emitting device | |
| JP2006066868A (en) | Solid-state component and solid-state component device | |
| WO2012130115A1 (en) | Flip-chip light emitting diode and manufacturing method thereof | |
| JP2009059969A (en) | Semiconductor light-emitting element, light-emitting device, luminaire, display unit, and method for fabricating semiconductor light-emitting element | |
| CN107863425B (en) | LED chip with high-reflection electrode and manufacturing method thereof | |
| CN106025028A (en) | Flip light emitting diode chip and manufacturing method thereof | |
| US8113903B2 (en) | Fabrication method of light-emitting device | |
| CN210379099U (en) | Flip LED chip | |
| KR100697829B1 (en) | Manufacturing method of light emitting element and light emitting element manufactured by this method | |
| CN110600592A (en) | Flip LED chip and manufacturing method thereof | |
| CN210379105U (en) | Flip LED chip for backlight display | |
| US20090166654A1 (en) | Light-emitting diode with increased light efficiency | |
| KR20060134491A (en) | Gan-based light emitting diode and manufacturing method of the same | |
| CN110828629B (en) | Flip LED chip and manufacturing method thereof | |
| CN110600599A (en) | Flip LED chip for backlight display and manufacturing method thereof | |
| US20130292692A1 (en) | Light emitting diode | |
| JP2005347700A (en) | Light emitting device and its manufacturing method | |
| KR100755659B1 (en) | Vertical nitride based semiconductor light emitting device having improved light extraction efficiency | |
| CN210805815U (en) | Flip LED chip | |
| JP5141608B2 (en) | Method for manufacturing solid element device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |