CN103249248B - Composite base plate, manufacture method and the LED vertical chip structure based on this composite base plate - Google Patents
Composite base plate, manufacture method and the LED vertical chip structure based on this composite base plate Download PDFInfo
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- CN103249248B CN103249248B CN201310156462.8A CN201310156462A CN103249248B CN 103249248 B CN103249248 B CN 103249248B CN 201310156462 A CN201310156462 A CN 201310156462A CN 103249248 B CN103249248 B CN 103249248B
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Abstract
The present invention discloses a kind of composite base plate, manufacture method and the LED vertical chip structure based on this composite base plate, and its structure of described composite base plate is followed successively by substrate, Graphene from the bottom to top. Substrate is conventional substrate in LED vertical chip: CuW, SiC, Si, Mo etc. This composite base plate, can be used as in LED vertical chip manufacture and is bonded substrate, be bonded on graphene layer by LED chip. Adopt the LED of this composite base plate, compare conventional substrate (CuW, SiC, Si), there is more excellent heat dispersion. In addition, LED chip is bonded on the graphene layer of described composite base plate by the present invention, and composition LED vertical chip structure, its heat dispersion can effectively improve.
Description
Technical field
The invention belongs to technical field of semiconductors, it relates to a kind of composite base plate, especially a kind of composite base plate of manufacturing for LED vertical chip and manufacture method thereof and the LED vertical chip structure based on this composite base plate.
Background technology
LED utilizes to be injected with the current carrier spontaneous radiation compound in source region and send photon, has the advantages such as environmental protection and energy saving, long service life, colour gamut are abundant. Therefore, LED, in fields such as illumination, display screen, traffic lights, Landscape Lighting and LCD backlight, has broad application prospects.
The power input of about about 20% can only be converted into luminous energy by LED, and all the other 80% have changed into heat energy. Along with the increase of power, heat dissipation problem becomes more and more to give prominence to. Bad meeting of dispelling the heat causes LED efficiency and degradation, service life reduction. Traditional LED is owing to adopting sapphire as substrate, and sapphire electrical and thermal conductivity performance is poor, can only make same side electrode structure. The LED of this kind of structure, bad owing to dispelling the heat, and have electric current to block up effect, limit its application in great power LED. Vertical chip technology, compares tradition structure LED, has light-emitting area big, good heat conductivity, and electric current blocks up the advantages such as effect improvement, represents the development trend of following LED chip structure. Vertical chip preparation Sapphire Substrate grows chip p-GaN layer be bonded on substrate (CuW, Mo, SiC, Si), then laser lift-off falls Sapphire Substrate. The heat conductivility of LED vertical chip bonding substrate, affects the heat-sinking capability of LED vertical chip to a great extent. Therefore, find the substrate of more high thermal conductivity, the heat-sinking capability improving LED vertical chip is significant.
Summary of the invention
It is an object of the invention to overcome the shortcoming of above-mentioned prior art, a kind of composite base plate, manufacture method and the LED vertical chip structure based on this composite base plate are provided, Graphene is transferred to substrate by the present invention, prepares substrate+Graphene composite base plate and has the higher capacity of heat transmission.The present invention is enable effectively to improve the capacity of heat transmission of substrate. The more substrate of high thermal conductivity coefficient, it is possible to improve the heat dispersion of LED vertical chip.
It is an object of the invention to solve by the following technical programs:
First the present invention proposes a kind of composite base plate, and it is made up of according to order from the bottom to top substrate and Graphene.
Aforesaid substrate is CuW, Mo, SiC or Si substrate.
Aforesaid substrate thickness is 100��400 ��m.
The number of plies of above-mentioned Graphene is 1��10 layer.
The present invention also proposes the manufacture method of the composite base plate that a kind of LED vertical chip manufactures, and the method CVD growing graphene on Copper Foil, is then transferred to substrate by PDMS medium.
Further, above method specifically comprises the following steps:
(1) CVD growing graphene on Copper Foil is adopted:
1) copper substrate is put into hot fireplace, lead to into H2, it is heated to 1000 DEG C, H2Flow is 2sccm, pressure 40mTorr in stove;
2) make copper substrate be stabilized in 1000 DEG C, lead to into CH4, flow 35sccm, pressure 500mTorr in stove;
3) lead to into CH4After 20 minutes, stove is cooled to room temperature, rate of cooling 100 DEG C/min;
(2) painting PDMS is revolved:
The surface that the shiny surface of the PDMS sheet made is pasted onto Graphene, standing, gas removal steeps;
(3) FeCl is used3Erode copper substrate:
The Cu matrix of the growing graphene with PDMS is put into FeCl3In solution;
(4) Graphene is affixed on substrate:
After etching, swimming on liquid level with the PDMS of Graphene, after cleaning PDMS sheet with water, be pasted onto on substrate, standing, gas removal takes PDMS off after steeping again.
In addition, the present invention also proposes the LED vertical chip structure of a kind of above-mentioned composite base plate, and LED chip is bonded on the graphene layer of described composite base plate by this LED vertical chip structure.
Described LED chip is provided with substrate, graphene layer, ZnO nm wall/GaN, n-GaN layer, InGaN/GaN Multiple Quantum Well and p-GaN from bottom to top successively.
The present invention has following useful effect:
Composite base plate involved in the present invention can be used for the bonding substrate in LED vertical chip preparation, is bonded on graphene layer by the LED chip that Sapphire Substrate grows. Based on the LED of composite base plate of the present invention, not only there is the intrinsic advantage of vertical structure LED, and compare the LED that existing substrate is obtained, there is better heat dispersion.
The present invention adopts the substrate with excellent conductive heat conduction and mechanical property, adopts graphene conductive so that it is have thermal conductivity (��5000w/mK) the highest in existing material. And in order to improve the thermal conductivity of substrate, Graphene, in preparation process, is transferred to substrate by the present invention, prepares substrate+Graphene composite base plate and there is the higher capacity of heat transmission.
Further, for the Mo that substrate of the present invention is selected, under room temperature, record Mo with laser heat conducting instrument and adhere to single-layer graphene thermal conductivity 249W/m K (Mo thermal conductivity is 138W/m K), attachment multilayer (2��10 layers) Graphene thermal conductivity 220W/m K. Confirm the introducing of Graphene, it is possible to improve the capacity of heat transmission of substrate. The more substrate of high thermal conductivity coefficient, it is possible to improve the heat dispersion of LED vertical chip.
Accompanying drawing explanation
Fig. 1 is that Graphene is transferred to flow path substrate figure.
Wherein: 1-CVD growing graphene on Copper Foil; 2-revolves and is coated with PDMS; 3-FeCl3 erodes copper substrate; Graphene is affixed on substrate by 4-; 5-removes PDMS.
Fig. 2 is illustrated vertical structure LED.
Fig. 3 is the structural representation of LED chip of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail:
With reference to figure 1 and Fig. 2, the composite base plate of the present invention is made up of according to order from the bottom to top substrate and Graphene. Described substrate is CuW, Mo, SiC or Si substrate; Substrate thickness is 100��400 ��m. The number of plies of described Graphene is 1��10 layer.
The manufacture method of composite base plate of the present invention is with CVD growing graphene on Copper Foil, is then transferred to substrate by PDMS medium. As shown in Figure 1, the method specifically comprises the following steps:
1. adopt CVD growing graphene on Copper Foil
(1) copper substrate is put into hot fireplace, lead to into H2, it is heated to 1000 DEG C, H2Flow is 2sccm, pressure 40mTorr in stove.
(2) make copper substrate be stabilized in 1000 DEG C, lead to into CH4, flow 35seem, pressure 500mTorr in stove.
(3) lead to into CH4After 20 minutes, stove is cooled to room temperature. Rate of cooling 100 DEG C/min.
2. revolve and it is coated with PDMS
The surface that the shiny surface of the PDMS sheet made is pasted onto Graphene, standing, gas removal steeps.
3. use FeCl3Erode copper substrate
The Cu matrix of the growing graphene with PDMS is put into FeCl3In solution, erode copper substrate.
4. Graphene is affixed on substrate
After etching, can swim on liquid level with the PDMS of Graphene.
5. remove PDMS
After cleaning PDMS sheet with water, being pasted onto on substrate, standing, gas removal takes PDMS off after steeping again.
With reference to figure 3, described LED chip is provided with substrate, graphene layer, ZnO nm wall/GaN, n-GaN layer, InGaN/GaN Multiple Quantum Well and p-GaN from bottom to top successively.
The present invention also proposes a kind of LED vertical chip structure, and LED chip is bonded on the graphene layer of described composite base plate by it. As shown in Figure 2, by the p-GaN layer plated surface last layer Ag reflectance coating of LED chip, then adopting bonding technology, be bonded on graphene layer, last laser lift-off falls Sapphire Substrate. The various techniques wherein related to, such as the growth of LED epitaxial film, bonding, stripping etc., all by existing techniques in realizing.
Claims (3)
1. the manufacture method of a composite base plate, it is characterised in that, described composite base plate is made up of according to order from the bottom to top substrate and Graphene; Described substrate is CuW, Mo, SiC or Si substrate; Described substrate thickness is 100��400 ��m; The number of plies of described Graphene is 1��10 layer; This manufacture method is with CVD growing graphene on Copper Foil, is then transferred to described substrate by PDMS medium; Specifically comprise the following steps:
(1) CVD growing graphene on Copper Foil is adopted:
1) copper substrate is put into hot fireplace, lead to into H2, it is heated to 1000 DEG C, H2Flow is 2sccm, pressure 40mTorr in stove;
2) make copper substrate be stabilized in 1000 DEG C, lead to into CH4, flow 35sccm, pressure 500mTorr in stove;
3) lead to into CH4After 20 minutes, stove is cooled to room temperature, rate of cooling 100 DEG C/min;
(2) painting PDMS is revolved:
The surface that the shiny surface of the PDMS sheet made is pasted onto Graphene, standing, gas removal steeps;
(3) FeCl is used3Erode copper substrate:
The Cu matrix of the growing graphene with PDMS is put into FeCl3In solution;
(4) Graphene is affixed on described substrate:
After etching, swimming on liquid level with the PDMS of Graphene, after cleaning PDMS sheet with water, be pasted onto on substrate, standing, gas removal takes PDMS off after steeping again.
2. the LED vertical chip structure of the composite base plate made based on claim 1 manufacture method, it is characterized in that, described LED vertical chip is provided with substrate, graphene layer, Ag reflectance coating, p-GaN, InGaN/GaN Multiple Quantum Well and n-GaN layer from bottom to top successively, it is specially: by the p-GaN layer plated surface last layer Ag reflectance coating of LED chip, then bonding technology is adopted, being bonded on graphene layer, last laser lift-off falls Sapphire Substrate.
3. the LED vertical chip structure of the composite base plate made based on claim 1 manufacture method, it is characterized in that, described LED vertical chip is provided with substrate, graphene layer, ZnO nm wall/GaN, n-GaN layer, InGaN/GaN Multiple Quantum Well and p-GaN from bottom to top successively, it is specially: by the n-GaN layer surface growth layer of ZnO nm wall/GaN of LED chip, then bonding technology is adopted, being bonded on graphene layer, last laser lift-off falls Sapphire Substrate.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105280745B (en) * | 2014-06-05 | 2018-04-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Tetra- knot cascade solar cells of GaInP/GaAs/InGaAs/Ge and preparation method thereof |
| CN104576862B (en) * | 2014-12-24 | 2017-08-25 | 江苏巨晶新材料科技有限公司 | A kind of nitride LED vertical chip based on copper substrate and preparation method thereof |
| CN104538526B (en) * | 2014-12-24 | 2017-05-24 | 江苏巨晶新材料科技有限公司 | Nitride LED epitaxial wafer structure based on copper substrate and manufacturing method thereof |
| CN104576850B (en) * | 2015-01-16 | 2017-02-22 | 太原理工大学 | Preparing method for light-emitting diode of vertical structure |
| CN104637794A (en) * | 2015-01-27 | 2015-05-20 | 北京中科天顺信息技术有限公司 | Vertical chip structure for nitride LED (light-emitting diode) and preparation method of vertical chip structure |
| CN108767102B (en) * | 2018-03-26 | 2020-07-07 | 华灿光电（浙江）有限公司 | Light emitting diode chip and preparation method thereof |
| CN108521717A (en) * | 2018-06-04 | 2018-09-11 | 南京大学 | The PTFE base PCB copper-clad plates and preparation method that a kind of graphene is modified |
| CN114559147B (en) * | 2021-04-21 | 2024-03-12 | 河南科技大学 | Preparation method of copper alloy composite board |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1619845A (en) * | 2003-11-18 | 2005-05-25 | Itswell株式会社 | Semiconductor light emitting diode and method for manufacturing the same |
| CN102082159A (en) * | 2010-10-27 | 2011-06-01 | 北京大学 | Nanoscale point light source based on graphene and preparation method thereof |
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| KR101217210B1 (en) * | 2010-10-07 | 2012-12-31 | 서울대학교산학협력단 | Light emitting device and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1619845A (en) * | 2003-11-18 | 2005-05-25 | Itswell株式会社 | Semiconductor light emitting diode and method for manufacturing the same |
| CN102082159A (en) * | 2010-10-27 | 2011-06-01 | 北京大学 | Nanoscale point light source based on graphene and preparation method thereof |
Non-Patent Citations (1)
| Title |
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| Large-scale pattern growth of graphene films for stretchable transparent electrodes;Keun Soo Kim et.al.;《Nature》;20090205;第457卷;第706-710页 * |
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