CN105047791A - High-power high-color-rendering-index white-light LED integrated light source module group and manufacturing method thereof - Google Patents
High-power high-color-rendering-index white-light LED integrated light source module group and manufacturing method thereof Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
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- 239000000463 material Substances 0.000 claims description 14
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- 108010043121 Green Fluorescent Proteins Proteins 0.000 claims description 5
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229920001971 elastomer Polymers 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
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- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
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- 239000011248 coating agent Substances 0.000 claims description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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Abstract
The invention discloses a high-power high-color-rendering-index white-light LED integrated light source module group and a manufacturing method thereof. The LED integrated light source module group comprises a ceramic substrate, a plurality of LED red-light chips, a plurality of LED blue-light chips, and a packaging material. Four power input welding plates are arranged at one end of the ceramic substrate; a plurality of LED red-light chip die bonding units that are distributed uniformly at intervals and are used for installing the LED red-light chips, an LED red-light chip conductive circuit, a first LED blue-light chip conductive circuit, and a second LED blue-light chip conductive circuit are arranged on the surface of the ceramic substrate. The manufacturing method based on the COB packaging way includes steps of die bonding, wire welding, damming, and powder dispensing. Therefore, the white-light LED light source can have the high color rendering index; and the luminous efficiency of the white-light LED light source can be improved and resources can be saved.
Description
Technical field
The present invention relates to a kind of LED technology, specifically a kind of high-power height is aobvious refers to white light LEDs integrated optical source module and manufacture method thereof.
Background technology
Shot-light on market is often applied to market illumination, while needing shot-light to have high-power, high light flux, specular removal, has good color rendering, the color of commodity is restored as much as possible.Shot-light in the market, owing to causing shot-light small volume by the restriction of little lighting angle, area source size is less, and power is generally smaller, when low colour temperature (such as 2700K), little shot-light has color rendering index and is greater than 90 and light efficiency is greater than the situation of 80lm/W; When neutral colour temperature (such as 4000K), little shot-light has color rendering index and is greater than 85 and light efficiency is greater than the situation of 90lm/W; When high color temperature (such as 5700K), little shot-light has color rendering index and is greater than 80 and light efficiency is greater than the situation of 100lm/W.Especially, in high-power situation (such as 45 watts), rarer shot-light meets These parameters.Target of the present invention is exactly design a kind of LED module of high power jet lamp, and it has the performance of high color rendering index (CRI), specular removal.
Summary of the invention
The present invention is intended to a kind of high-power height aobvious finger white light LEDs integrated optical source module and manufacture method thereof.
The present invention is achieved through the following technical solutions.
A kind of high-power height is aobvious refers to white light LEDs integrated optical source module, comprising: ceramic substrate, some LED red light chips and some LED blue chips and encapsulating material; Described ceramic substrate is alumina material ceramic substrate; Described ceramic base plate surface one end is provided with four power supply input pads, is the first power supply input pad, second source input pad, the 3rd power supply input pad, the 4th power supply input pad respectively; Described ceramic base plate surface is also provided with interval and is uniformly distributed in some LED red light chips die bond positions for installing LED red light chips; Described ceramic base plate surface is also provided with LED red light chips conducting wire and a LED blue chip conducting wire, LED blue chip conducting wire the 2nd; Described LED red light chips conducting wire by gold thread be fixed on LED red light chips die bond position LED red light chips and be connected conducting, and described one end, LED red light chips conducting wire is connected to the first power supply input pad, and the other end is connected to the 4th power supply input pad; A circumference disconnected is surrounded between a described LED blue chip conducting wire and the 2nd LED blue chip conducting wire, wherein one end of a LED blue chip conducting wire is connected to second source input pad, and one end of the other end and the 2nd LED blue chip conducting wire disconnects; One end of the 2nd described LED blue chip conducting wire connects the 3rd power supply input pad, and one end of the other end and a LED blue chip conducting wire disconnects; The white space that one LED blue chip conducting wire and the 2nd LED blue chip conducting wire surround is used for fixing described LED blue chip, and LED blue chip and a LED blue chip conducting wire and the 2nd LED blue chip conducting wire are connected to form loop by gold thread.
Further optimally, described LED red light chips and LED red light chips die bond position all have 4.
Further optimally, described encapsulating material comprises box dam cushion rubber and fluorophor; Described box dam cushion rubber is positioned on ceramic substrate, surrounds all LED blue chips and LED red light chips, is filled with the fluorophor be mixed to form by fluorescent material and liquid-state silicon gel in box dam circle.
Manufacture above-mentioned a kind of high-power height and show the method referring to white light LEDs integrated optical source module, adopt COB encapsulation, its manufacture method comprises die bond, bonding wire, box dam, some powder step, and concrete steps comprise:
(1) be fixed on the LED red light chips die bond position of ceramic substrate by LED red chip die bond elargol, LED blue chip is then arranged on ceramic substrate with insulative glue attachment, then is toasted by substrate, and crystal-bonding adhesive is solidified;
(2) with gold thread, two groups of LED chips are connected respectively;
(3) special for LED box dam glue is being enclosed on substrate, forming an annular box dam circle, making all LED chips enclose in wherein;
(4) fluorescent material and liquid-state silicon gel mixing and stirring are formed fluorophor, liquid fluorescent body is dripped in box dam circle, baking-curing, make liquid fluorescent body obtain solidifying to form silica gel fluorescence coating.
Further optimally, in step (1), described LED blue chip emission wavelength is 450nm-460nm, and single voltage is between 3.0-3.3V; Described LED red light chips emission wavelength is 620nm-650nm, and single voltage is between 2.1-2.5V; Described ceramic base plate surface applies one deck insulation white ink.
Further optimally, die bond glue used is commercially available LED die bond insulating cement and die bond elargol, and its curing temperature is 150-170 DEG C, and curing time is 1.5-2 hour.
Further optimally, described gold thread specification is 0.9mil or 1mil.
Further optimally, the height of described box dam circle is 0.5-1.3mm; Described box dam glue is the special box dam glue of commercially available LED.
Further optimally, in step (4), the liquid fluorescent body thickness dripped in box dam circle is 0.5mm to 0.8mm, should at least higher than the gold thread height in box dam circle; Described fluorescent material comprises yellow fluorescent powder, red fluorescence powder and yellowish green fluorescent powder, and the excitation wavelength of yellow fluorescent powder is between 455-460nm, and emission wavelength is 540-555nm; Red fluorescence powder excitation wavelength is 430-490nm, and emission wavelength is 620-650nm; Yellowish green fluorescent powder excitation wavelength is 450-470nm, and emission wavelength is 522-525nm; Described liquid-state silicon gel is the special packaging silicon rubber of commercially available COB; In a powder step, after the complete levelling of liquid fluorescent silica gel, in the baking box being positioned over 80-90 DEG C, baking is after 1 hour, continues baking 2 hours, the fluorescence silica gel layer in box dam circle is solidified in the baking box proceeding to 150-155 DEG C.
Compared with prior art, tool of the present invention has the following advantages and technique effect: the present invention can not only ensure that White LED light source has high color rendering index, can improve the luminous efficiency of White LED light source, saving resource simultaneously.For the problem that the color rendering index solving LED engine is not high, only have on the basis of set of circuits in conventional COB encapsulation, add one group of LED ruddiness circuit, forming one group is blue chip circuit, one group is the pattern of red light chips circuit, and LED blue chip conducting wire separates with LED red light chips conducting wire.Owing to the addition of red light chips, the red fluorescence powder amount needed when reaching identical color rendering index reduces, and red fluorescence powder is expensive, therefore the packaging cost of LED engine can be reduced, launching efficiency in addition due to red fluorescence powder amount is low, and therefore the reduction of red fluorescence powder content can effectively reduce the blue light conversion loss of LED blue chip thus improve light efficiency.Adopt the COB packaged type of ceramic bases.LED blue chip and red light chips, be all fixed on ceramic substrate, and ceramic substrate is alumina material, has good heat dispersion and insulation property.Connecing aluminum or radiator below ceramic substrate, be beneficial to heat and be dissipated to aluminum from chip by ceramic substrate in time, or by fan, heat is arranged in air, by reducing the joint temperature of LED chip, improving LED outgoing light efficiency.
Accompanying drawing explanation
Fig. 1 is that a kind of high-power height shows the structural representation referring to white light LEDs integrated optical source module.
Embodiment
For understanding the present invention further, below in conjunction with specific embodiment, the present invention is further elaborated, but embodiments of the present invention are not limited thereto.
Embodiment 1:
A kind of high-power (30W) height is aobvious refers to white light LEDs integrated optical source module, and embodiment is as follows:
As Fig. 1, LED red light chips is fixed on LED red light chips die bond position (5,6,7,8), the form that 4 red light chips are taked to connect, by gold thread 14 and LED red light chips conducting wire 10 UNICOM, by LED blue chip with 3 and the forms of 14 strings evenly arrange and be fixed on white space 13, and connect with gold thread 14, and with LED blue chip conducting wire 11 and the 2nd LED blue chip conducting wire 12 UNICOM.
Die bond: by the hydropexis of all LED chip crystal-bonding adhesives in ceramic substrate 13, puts 150 DEG C of oven cooking cycle into and takes out after 1.5 hours;
Bonding wire: by the ceramic substrate of the die bond of taking-up, bonding wire is carried out to chip and conducting wire.
Box dam: carry out box dam after treating gold thread welding, box dam height is not less than 0.5mm;
Point powder: by 2g liquid-state silicon gel A glue, 2g liquid-state silicon gel B glue, 0.45g emission wavelength is at the yellow fluorescent powder of 540nm, and 0.022g emission wavelength joins in glass at the red fluorescence powder of 628nm, puts into defoamer and carry out deaeration after stirring.The fluorescent powder colloid of deaeration is injected the box dam circle of ceramic substrate, after the complete levelling of liquid fluorescent silica gel, in the baking box being positioned over 80-90 DEG C, baking is after 1 hour, continues baking 2 hours, the fluorescence silica gel layer in box dam circle is solidified in the baking box proceeding to 150-155 DEG C.Make colour temperature at about 5700K by regulating the amount of fluorescent powder colloid.First power supply input pad 1 and the 4th power supply input pad 4 are accessed a DC power supply according to both positive and negative polarity, second source input pad 2 and the 3rd power supply input pad 3 are accessed another DC power supply according to both positive and negative polarity, and the data recorded by color-division system are as shown in table 1 below.
Table 1
Embodiment 2:
Except following special instruction, the step such as die bond, bonding wire, box dam, solidification is identical with embodiment 1.
Point powder: by 1.7g liquid-state silicon gel A glue, 1.7g liquid-state silicon gel B glue, 0.32g emission band is the yellow fluorescent powder of 550nm, joins in glass, puts into defoamer and carry out deaeration after stirring.The fluorescent powder colloid of deaeration is injected the box dam circle of ceramic substrate, regulate the amount of fluorescent powder colloid to make colour temperature at about 4000K.The logarithmic data recorded by color-division system is as shown in table 2 below.
Table 2
Embodiment 3:
Table 3
Except following special instruction, die bond, bonding wire, box dam, solidification are identical with embodiment 1.
Point powder: by 1.7g liquid-state silicon gel A glue, 1.7g liquid-state silicon gel B glue, 0.364g emission band is the yellowish green fluorescent powder of 555nm, 0.08g emission band is 525nm green emitting phosphor, 0.07g emission band is that the red fluorescence powder of 658nm joins in glass, puts into defoamer and carry out deaeration after stirring.The fluorescent powder colloid of deaeration is injected the box dam circle of ceramic substrate, regulate the amount of fluorescent powder colloid to make colour temperature at about 2700K, the logarithmic data recorded by color-division system is as shown in table 3.
The present invention can not only ensure that White LED light source has high color rendering index, can improve the luminous efficiency of White LED light source, saving resource simultaneously.For the problem that the color rendering index solving LED engine is not high, only have on the basis of set of circuits in conventional COB encapsulation, add one group of LED ruddiness circuit, forming one group is blue chip circuit, one group is the pattern of red light chips circuit, and LED blue chip conducting wire separates with LED red light chips conducting wire.Owing to the addition of red light chips, the red fluorescence powder amount needed when reaching identical color rendering index reduces, and red fluorescence powder is expensive, therefore the packaging cost of LED engine can be reduced, launching efficiency in addition due to red fluorescence powder amount is low, and therefore the reduction of red fluorescence powder content can effectively reduce the blue light conversion loss of LED blue chip thus improve light efficiency.Adopt the COB packaged type of ceramic bases.LED blue chip and red light chips, be all fixed on ceramic substrate, and ceramic substrate is alumina material, has good heat dispersion and insulation property.Connecing aluminum or radiator below ceramic substrate, be beneficial to heat and be dissipated to aluminum from chip by ceramic substrate in time, or by fan, heat is arranged in air, by reducing the joint temperature of LED chip, improving LED outgoing light efficiency.
Claims (9)
1. high-power height is aobvious refers to a white light LEDs integrated optical source module, it is characterized in that comprising: ceramic substrate (9), some LED red light chips and some LED blue chips and encapsulating material; Described ceramic substrate (9) is alumina material ceramic substrate; Described ceramic base plate surface one end is provided with four power supply input pads, is the first power supply input pad (1), second source input pad (2), the 3rd power supply input pad (3), the 4th power supply input pad (4) respectively; Described ceramic base plate surface is also provided with interval and is uniformly distributed in some LED red light chips die bond positions (5,6,7,8) for installing LED red light chips; Described ceramic base plate surface is also provided with LED red light chips conducting wire (10) and LED blue chip conducting wire, a LED blue chip conducting wire (11) the 2nd (12); Described LED red light chips conducting wire (10) by gold thread (14) be fixed on LED red light chips die bond position (5,6,7,8) LED red light chips and be connected conducting, and described LED red light chips conducting wire (10) one end is connected to the first power supply input pad (1), the other end is connected to the 4th power supply input pad (4); A circumference disconnected is surrounded between a described LED blue chip conducting wire (11) and the 2nd LED blue chip conducting wire (12), wherein one end of a LED blue chip conducting wire (11) is connected to second source input pad (2), and one end of the other end and the 2nd LED blue chip conducting wire (12) disconnects; One end of the 2nd described LED blue chip conducting wire (12) connects the 3rd power supply input pad (3), and one end of the other end and a LED blue chip conducting wire (11) disconnects; The white space (13) that one LED blue chip conducting wire (11) and the 2nd LED blue chip conducting wire (12) surround is for fixing described LED blue chip, and LED blue chip and a LED blue chip conducting wire (11) and the 2nd LED blue chip conducting wire (12) are connected to form loop by gold thread (14).
2. a kind of high-power height as claimed in claim 1 is aobvious refers to white light LEDs integrated optical source module, it is characterized in that: described LED red light chips and LED red light chips die bond position all have 4.
3. a kind of high-power height as claimed in claim 1 is aobvious refers to white light LEDs integrated optical source module, it is characterized in that: described encapsulating material comprises box dam cushion rubber and fluorophor; Described box dam cushion rubber is positioned on ceramic substrate, surrounds all LED blue chips and LED red light chips, is filled with the fluorophor be mixed to form by fluorescent material and liquid-state silicon gel in box dam circle.
4. a kind of high-power height described in manufacturing claims 1 shows the method referring to white light LEDs integrated optical source module, it is characterized in that: adopt COB encapsulation, comprise die bond, bonding wire, box dam, some powder step, concrete steps comprise:
(1) be fixed on the LED red light chips die bond position of ceramic substrate by LED red chip die bond elargol, LED blue chip is then arranged on ceramic substrate with insulative glue attachment, then is toasted by substrate, and crystal-bonding adhesive is solidified;
(2) with gold thread, two groups of LED chips are connected respectively;
(3) special for LED box dam glue is being enclosed on substrate, forming an annular box dam circle, making all LED chips enclose in wherein;
(4) fluorescent material and liquid-state silicon gel mixing and stirring are formed fluorophor, liquid fluorescent body is dripped in box dam circle, baking-curing, make liquid fluorescent body obtain solidifying to form silica gel fluorescence coating.
5. manufacture method as claimed in claim 4, it is characterized in that: in step (1), described LED blue chip emission wavelength is 450nm-460nm, and single voltage is between 3.0-3.3V; Described LED red light chips emission wavelength is 620nm-650nm, and single voltage is between 2.1-2.5V; Described ceramic base plate surface applies one deck insulation white ink.
6. manufacture method as claimed in claim 4, is characterized in that: die bond glue used is commercially available LED die bond insulating cement and die bond elargol, and its curing temperature is 150-170 DEG C, and curing time is 1.5-2 hour.
7. manufacture method as claimed in claim 4, is characterized in that: described gold thread specification is 0.9mil or 1mil.
8. manufacture method as claimed in claim 4, is characterized in that: the height of described box dam circle is 0.5-1.3mm; Described box dam glue is the special box dam glue of commercially available LED.
9. manufacture method as claimed in claim 4, is characterized in that: in step (4), and the liquid fluorescent body thickness dripped in box dam circle is 0.5mm to 0.8mm, should at least higher than the gold thread height in box dam circle; Described fluorescent material comprises yellow fluorescent powder, red fluorescence powder and yellowish green fluorescent powder, and the excitation wavelength of yellow fluorescent powder is between 455-460nm, and emission wavelength is 540-555nm; Red fluorescence powder excitation wavelength is 430-490nm, and emission wavelength is 620-650nm; Yellowish green fluorescent powder excitation wavelength is 450-470nm, and emission wavelength is 522-525nm; Described liquid-state silicon gel is the special packaging silicon rubber of commercially available COB; In a powder step, after the complete levelling of liquid fluorescent silica gel, in the baking box being positioned over 80-90 DEG C, baking is after 1 hour, continues baking 2 hours, the fluorescence silica gel layer in box dam circle is solidified in the baking box proceeding to 150-155 DEG C.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428498A (en) * | 2015-11-20 | 2016-03-23 | 福建中科芯源光电科技有限公司 | High-density integrated COB white light source and generation method therefor |
| CN105762144A (en) * | 2016-05-24 | 2016-07-13 | 杜军 | Full-spectrum high-color-rendering LED white light emitting device and manufacturing method thereof |
| CN105826450A (en) * | 2016-04-15 | 2016-08-03 | 中山市利光电子有限公司 | High-color-temperature LED lamp bead manufacture technology |
| CN113811076A (en) * | 2021-08-03 | 2021-12-17 | 江苏运鸿辉电子科技有限公司 | Display drive packaging and protecting system based on flexible printed circuit board |
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| CN113811076A (en) * | 2021-08-03 | 2021-12-17 | 江苏运鸿辉电子科技有限公司 | Display drive packaging and protecting system based on flexible printed circuit board |
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