CN104022193B - The method for packing and device of Rimless LED - Google Patents
The method for packing and device of Rimless LED Download PDFInfo
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- CN104022193B CN104022193B CN201410271081.9A CN201410271081A CN104022193B CN 104022193 B CN104022193 B CN 104022193B CN 201410271081 A CN201410271081 A CN 201410271081A CN 104022193 B CN104022193 B CN 104022193B
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- support
- heat sink
- silver coating
- led
- led chip
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000012856 packing Methods 0.000 title claims abstract description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052709 silver Inorganic materials 0.000 claims abstract description 58
- 239000004332 silver Substances 0.000 claims abstract description 58
- 238000000576 coating method Methods 0.000 claims abstract description 51
- 239000011248 coating agent Substances 0.000 claims abstract description 49
- 239000003292 glue Substances 0.000 claims abstract description 44
- 239000011229 interlayer Substances 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims abstract description 14
- 238000005520 cutting process Methods 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000741 silica gel Substances 0.000 claims abstract description 10
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011889 copper foil Substances 0.000 claims abstract description 7
- 238000009713 electroplating Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 27
- 238000005538 encapsulation Methods 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 238000004806 packaging method and process Methods 0.000 claims description 19
- 229920000642 polymer Polymers 0.000 claims description 13
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 12
- 229920002554 vinyl polymer Polymers 0.000 claims description 11
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 6
- 241000218202 Coptis Species 0.000 claims description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 5
- VQLYBLABXAHUDN-UHFFFAOYSA-N bis(4-fluorophenyl)-methyl-(1,2,4-triazol-1-ylmethyl)silane;methyl n-(1h-benzimidazol-2-yl)carbamate Chemical compound C1=CC=C2NC(NC(=O)OC)=NC2=C1.C=1C=C(F)C=CC=1[Si](C=1C=CC(F)=CC=1)(C)CN1C=NC=N1 VQLYBLABXAHUDN-UHFFFAOYSA-N 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 description 20
- 239000000919 ceramic Substances 0.000 description 9
- 239000004568 cement Substances 0.000 description 5
- 239000000084 colloidal system Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
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- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- -1 vinyl Siloxane Chemical class 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention discloses a kind of method for packing of Rimless LED, including makes the processing steps such as support, die bond, bonding wire, dispensing and cutting, specifically includes following steps：Step 1：Make support：The thick electrolytic copper foils of 0.05 0.10mm are cut into into network structure, meanwhile, organic silica gel is enclosed in the cancellated positive and negative for obtaining, then the organic silica gel by network structure with two sides is pressed, and forms the support of lamellar；It is located on the surface of support at the position of die bond and arranges heat sink；Then one layer of silver coating of this electroplating surface on heat sink support；Silver coating is provided with electrode pad, and electrode pad is arranged at the position of the silver coating for being equipped with heat sink, and electrode pad includes both positive and negative polarity pad, between both positive and negative polarity pad arranges interlayer；Step 2：Die bond；Step 3：Bonding wire；Step 4：Dispensing and cutting, by high-viscosity organic fluorescence glue point glue, then toast, are finally cut and light splitting；The viscosity of the high-viscosity organic fluorescence glue is 15000 20000Pas.
Description
Technical field
The present invention relates to LED manufacturing process, and in particular to a kind of processing technology of Rimless LED, and by the Rimless
Rimless LED matrix made by the processing technology of LED.
Background technology
In recent years, as light emitting diode (lightemittingdiode, LED) is with small volume, reaction be fast, the life-span
It is long, be difficult decay, firm in appearance, vibration resistance, can full-color light-emitting (containing black light), point to that design is easy, low-voltage, low electricity
Stream, conversion loss is low, heat radiation is little, volume production is easy, it is environmentally friendly the advantages of, gradually replaced general conventional illumination device.
As microelectronic component develops to high-performance, lightweight and miniaturization, microelectronics proposes to get over to encapsulating material
Carry out harsher requirement.Traditional encapsulating material includes silicon substrate, metal basal board and ceramic substrate etc..Silicon and ceramic substrate processing
Difficulty, high cost, thermal conductivity are low；Metal material thickness and its thermal coefficient of expansion are mismatched with microelectronic chip, are using process
The middle warpage by generation thermal stress.Therefore, these traditional encapsulating materials are difficult to meet the challenging needs of base plate for packaging.For big
For power LED, this is particularly important.
Both at home and abroad the heat-radiating substrate material of new research and development have metal-core printed circuit board (MCPCB), cover copper ceramic wafer (DBC) and
Metal Substrate low-temperature sintered ceramics substrate (LTCC-M).Wherein, metal-core printed circuit board thermal conductivity is limited by insulating barrier, heat
Conductance is low, and can not realize encapsulating on plate；Covering copper ceramic wafer adopts Direct Bonding mode by ceramics together with metal bonding, carries
High thermal conductivity, while so that thermal coefficient of expansion control is in a suitable scope, but the respond of metal and ceramics is low, moistens
It is moist bad so that bonding difficulty is high, and interface bond strength is low, easy to fall off；Metal Substrate low-temperature sintered ceramics substrate is to molding chi
Very little required precision is high, complex process, similarly there is metal and ceramic wettability is bad, a caducous difficult problem.
For this purpose, the patent of invention of an application number 201210039655.0 discloses a kind of LED chip encapsulation of Rimless
Method and in this way made by light-emitting device, wherein, a kind of LED chip method for packing of Rimless is comprised the steps of：Carry
For a substrate；A line layer is formed on substrate；A thin film is formed on line layer, thin film has an at least through hole, often
One through hole crosses the setting position of a closing；Setting position of at least LED chip corresponding to a closing is set；And profit
Acted on cohesiveness to be formed the raised colloid of a middle body be coated in all of LED chip of the position in identical setting position it
On.The thin film of line layer, special construction in said structure, is set gradually on board structure, therefore causes substrate holder more multiple
It is miscellaneous, it is poor to the controllability of single LED chip encapsulation, for the material of the requirement of every money different size power, need independence
Substrate is driven, cost is increased to a certain extent.
Likewise, the utility model patent of Application No. 201220056716.X discloses a kind of COB types of Rimless
LED light emission device, including：One substrate；One line layer, is formed on substrate；One thin film, is formed on line layer, thin film
With an at least through hole, each through hole crosses the setting position of a closing；An at least LED chip, arranges and seals corresponding to one
The setting position closed；And colloid, act on being formed and making its middle body raised using cohesiveness, and position is coated in phase
On all of LED chip arranged in position.The patent has substrate holder more multiple as above-mentioned patent, equally
It is miscellaneous, it is poor to the controllability of single LED chip encapsulation, for the material of the requirement of every money different size power, need independence
Substrate is driven, cost is increased to a certain extent.And different fluorescent glues are put on the same substrate, are improved to a certain extent
Difficulty for dispensing glue.
The content of the invention
Therefore, for above-mentioned problem, the present invention proposes a kind of method for packing and device of Rimless LED, and raising takes light
Efficiency and reduces cost, solve the deficiency of prior art.
Specifically, the technical solution adopted in the present invention is, a kind of method for packing of Rimless LED, including make support,
The processing steps such as die bond, bonding wire, dispensing and cutting.Specifically, comprise the steps：
Step 1：Make support：The thick electrolytic copper foils of 0.5-1.0mm are cut into into network structure, meanwhile, in the net for obtaining
The positive and negative of shape structure encloses organic silica gel, and then the organic silica gel by network structure with two sides is pressed, and forms the support of lamellar；
It is located on the surface of support at the position of die bond and arranges heat sink；Then this surface (laying on heat sink support
Electroplate where heat sink and non-laying is heat sink) one layer of silver coating of plating, silver coating THICKNESS CONTROL is in 80-150mil；Silver coating
Electrode pad is provided with, electrode pad is arranged at the position of the silver coating for being equipped with heat sink, electrode pad includes that both positive and negative polarity is welded
Disk, arranges organic interlayer between both positive and negative polarity pad；The heat sink one side away from silver coating is shaped to the electrode of electrode pad.
Heat sink to be layed in die bond position, the position of die bond includes the position of metal and bonding wire, namely a heat sink part is used for placing LED
Chip, another part are used for doing electrode pad.Backing thickness of the prior art typically in 0.4-1.5mm, at this moment in order to examine
Consider the heat resistance of material, and need to do frame, can not be made thin thin, the whole support of the present invention adopts 0.05-
0.10mm thick electrolytic copper foil is made, and adds other heat sink, silver coatings, and its gross thickness is being reduced still about 0.05-0.10mm
While cost, thermal diffusivity is improve.In addition, interlayer preferably use the siloxane polymer of vinyl made by interlayer, adopt
With the siloxane polymer of the vinyl so that the temperature tolerance of integral LED light source is high.
Step 2：Die bond：Dehumidifying baking is carried out to support, and LED chip is solidificated on support；Wherein, particular by
Braking bonder by LED chip be fixed on support it is heat sink on, wherein, first put die bond glue after again consolidate LED chip (crystal-bonding adhesive
It can also be elargol that water can be insulating cement.Middle low power chip prioritizing selection insulating cement, high-power chip select elargol).Will
Gu the support of good LED chip is toasted, according to being toasted using specific crystal-bonding adhesive baking condition；
Step 3：Bonding wire：By the support after solidification LED chip, plasma-based cleaning 5- is carried out under conditions of 100 kPas of negative pressure
10min, cleaning carry out bonding wire after finishing, and can carry out bonding wire with gold thread or alloy wire, for high-power LED chip is used
The line of 1.2-1.5mil, the LED chip of middle low power select the line of 0.9-1.0mil；
Step 4：Dispensing and cutting, after die bond bonding wire step, by high viscosity organic fluorescence glue, (fluorescent glue is exactly
The material of fluorescent material and glue mix homogeneously) dispensing, it is preferred that the fluorescent glue of dome-type is formed after its dispensing；Then dried
It is roasting that (baking condition is toasted according to the baking condition of corresponding glue.), finally cut and (cut for example with distilled water at a high speed
Cut method cutting) and light splitting.The present invention realizes low cost, high light flux, the LED packaging technologies of high stability by above-mentioned technique.
Wherein, the viscosity of the high viscosity fluorescent glue is 15000-20000Pas.The high viscosity phosphor gel can put into hemispherical
Lens.Wherein, glue point is put into hemispheric fluorescent glue, can improve the efficiency of light extraction of chip, reduce the screening that chip frame goes out light
Gear, improves the luminous flux of whole chips, and then improves light efficiency.
Further, the silver coating selects silver coating made by minute surface silver lustre, and the overall structure of support is planar structure,
The minute surface silver lustre of the silver coating makes LED chip light fully reflect as reflecting layer, improves the light efficiency of whole encapsulation.Than passing
That what is united has frame LED encapsulation heatproof higher；Heat sink increasing is with thinning by effectively raising, LED core chip size is vertical with heat leads
Go out to the lower surface of substrate, beneficial to the quick heat radiating of whole LED chip, improve the reliability of LED encapsulation.As the support is put down
Face structure, can not be limited by the dimensions of chip, and the encapsulation power of LED can be brought up to 10W or so by the encapsulating structure.
Further, the support in addition to metal, made using the siloxane polymer of vinyl by remainder, the ethylene
The siloxane polymer of base is high-temperature resistant plastics.
Further, it is described heat sink for metal heat sink.Weld more than electrode for placing the area of the metal heat sink of LED chip
More than 3 times of disc area.The setting of the area can improve the size of chip placement, improve the power of whole encapsulation.Simultaneously
Improve the transmission of LED chip heat.
Wherein, LED chip heat transfer type adopts horizontal and vertical radiating mode.The maximum encapsulation power of LED chip is reachable
10W。
The packaging system of the Rimless LED of the present invention, including the dome-type of support and the LED chip on package support is glimmering
Optical cement, the support include silver coating, both positive and negative polarity pad, the interlayer of organic silica gel that is heat sink and coordinating support.Specifically, the support
Positive and negative pressing have organosilicon glue-line, organosilicon glue-line, heat sink and silver coating are sequentially provided with support, it is heat sink on support
Die bond position at, silver coating lays whole rack surface (having heat sink one side)；LED chip is on silver coating；Plating
Silver layer is provided with electrode pad, and electrode pad is arranged at the position of the silver coating for being equipped with heat sink, and electrode pad includes positive and negative
Pole pad, arranges interlayer between both positive and negative polarity pad；Wherein interlayer runs through whole internal stent, for what is drawn LED chip
Both positive and negative polarity separates, and the interlayer coordinates the organosilicon glue-line of support and arranges.Silver coating thickness selects 120-150 ㏕, is matched with
The heat sink surface, connects the positive and negative electrode of LED chip, respectively with the standing part that the bottom with LED chip combines；
It is heat sink positioned at die bond position, the die bond position include for support electrode pad metal position and the position of bonding wire, have
The bottom surface that the silver coating corresponding with LED chip bottom is engaged.LED chip is arranged at the middle of above-mentioned support.Through
The complete material of die bond bonding wire, by low viscosity organic fluorescence glue or high viscosity organic fluorescence glue, (fluorescent glue is exactly fluorescent material and glue
The material of water mix homogeneously) dispensing, toast, finally cut and light splitting.Wherein, the interlayer is that the selection of material is vinyl
Siloxane polymer interlayer (siloxane polymer of vinyl is a kind of chemical name of material).
In existing COB processing procedures, LED chip is in glue dispensing and packaging, it is necessary to arrange frame (glue in whole circuit board periphery
Frame), colloid for dispensing glue is blocked and is resided in wherein, so as to disposably all LED chips on circuit board are covered with colloid,
And form the planar package light source of whole piece.The present invention uses disposal molding, without the need for arranging glue frame in circuit board periphery,
It is that, by being to use high-viscosity glue, the directly dispensing after glue and fluorescent material mixing, this kind of glue thixotropy are extremely low, have pole
Strong guarantor's plasticity.
In addition, the present invention adopts such scheme, by simplifying support, thinning backing thickness improves the work(of LED chip encapsulation
Rate, and the material on same support is carried out unifying encapsulating, it is ensured that the concordance of material, and in LED core after encapsulating
The surface colloid surface of piece carries out a domed transparent lens, finally carries out cutting to form single individual packages body, passes through
Material is sorted by light-splitting color-separating machine, and client can select the material after sorting as needed, and be combined.The present invention has
Following advantage：1. minute surface silver coating will be fully reflected from LED chip light, increase thickness of coating, improve whole encapsulation
Take light efficiency；The increasing of heat sink area can be beneficial to by the heat of LED chip by another surface vertically and horizontally derived to substrate
The radiating of whole LED chip, improves reliability.Realize high light flux, the technical optimization of high reliability LED encapsulation；2. hot
The increase of heavy area allows LED chip heat preferably to import mounting surface.Reliability is lifted further；3. Rimless is packaged with
The raising efficiency of light extraction of effect；4. raising efficiency of light extraction will be fully reflected in the thickening of silver coating；5. increase heat sink area to improve
LED core chip size, improves efficiency of light extraction, and then reduces the purpose of cost；6. dome-type lens dotting glue method is effectively carried
High workload efficiency.
Description of the drawings
Fig. 1 is the schematic perspective view (plurality of LEDs chip) of the packaging system of the Rimless LED of the present invention；
Fig. 2 is the schematic perspective view (without LED chip) of the support of the packaging system of the Rimless LED of the present invention；
Fig. 3 is the cutting schematic diagram of the support of the packaging system of the Rimless LED of the present invention；
Fig. 4 is the schematic diagram of the Copper Foil of the packaging system of the Rimless LED of the present invention；
Fig. 5 is the top view (single LEDs chip) of the outward appearance of the packaging system of the Rimless LED of the present invention；
Fig. 6 is the side view (single LEDs chip) of the outward appearance of the packaging system of the Rimless LED of the present invention；
Fig. 7 is the upward view (single LEDs chip) of the outward appearance of the packaging system of the Rimless LED of the present invention；
Fig. 8 is the schematic perspective view (single LEDs chip) of the packaging system of the Rimless LED of the present invention；
Fig. 9 is the schematic perspective view (containing LED chip) of the support of the packaging system of the Rimless LED of the present invention；
Figure 10 is the top view (without LED chip) of the support of the packaging system of the Rimless LED of the present invention；
Figure 11 is the upward view of the support of the packaging system of the Rimless LED of the present invention；
Figure 12 is the flow chart of the method for packing of the Rimless LED of the present invention.
Specific embodiment
In conjunction with the drawings and specific embodiments, the present invention is further described.
The packaging system of the Rimless LED of the present invention, referring to Fig. 1-Figure 11, which is included on support 10 and package support
The dome-type fluorescent glue 7 of LED chip 4.Each support 10 can encapsulate multiple LED chips 4.Wherein, referring to Fig. 8-Figure 11, support 10
Including the interlayer 3 of the organic silica gel of silver coating, electrode pad 6, heat sink 2 and cooperation support 10.The positive and negative pressing of the support 10
There is organosilicon glue-line, on support, be sequentially provided with organosilicon glue-line, heat sink 2 and silver coating, heat sink 2 are located at the die bond on support 10
At position, silver coating lays whole rack surface (having heat sink one side)；LED chip 4 is on silver coating；Set on silver coating
There is electrode pad 6, electrode pad 6 is arranged at the position of the silver coating for being equipped with heat sink, electrode pad 6 includes that both positive and negative polarity is welded
Disk, arranges interlayer 3 between both positive and negative polarity pad；Wherein interlayer 3 runs through inside whole support 10, for what is drawn LED chip 4
Both positive and negative polarity separates (positive and negative electrode of LED chip 4 is drawn by gold thread 5), and the interlayer 3 coordinates the organosilicon glue-line of support and sets
Put.Silver coating thickness selects 120-150 ㏕, is matched with heat sink 2 surface, connects the positive and negative electrode of LED chip 4 respectively,
With the standing part combined with the bottom of LED chip 4；Heat sink 2 are located at die bond position, and the die bond position is included for supporting
The position of the metal of electrode pad and the position of bonding wire, with the bottom that the silver coating corresponding with 4 bottom of LED chip is engaged
Face.Through the complete material of die bond bonding wire, by low viscosity organic fluorescence glue or high viscosity organic fluorescence glue, (fluorescent glue is exactly fluorescence
The material of powder and glue mix homogeneously) dispensing, toast, finally cut and light splitting.Wherein, the interlayer 3 is the selection of material
Interlayer made by siloxane polymer (siloxane polymer of vinyl is a kind of chemical name of material) for vinyl.
The method for packing of the Rimless LED of the packaging system of above-mentioned Rimless LED, including support 10 make, die bond, weldering
The processing steps such as line, dispensing and cutting.Specifically, referring to Figure 12, comprise the steps：
Step 1：Make support 10：The thick electrolytic copper foils of 0.05-0.10mm are cut into into network structure, meanwhile, obtaining
Cancellated positive and negative enclose organic silica gel, then the organic silica gel on network structure and two sides is pressed, lamellar is formed
Support；It is located on the surface of support at the position of die bond and arranges heat sink；Then this surface on heat sink support
(electroplating where laying is heat sink and non-laying is heat sink) one layer of silver coating of plating, silver coating THICKNESS CONTROL is in 80-150mil；Plating
Silver layer is provided with electrode pad, and electrode pad is arranged at the position of the silver coating for being equipped with heat sink, and electrode pad includes positive and negative
Pole pad, arranges organic interlayer between both positive and negative polarity pad；The heat sink one side away from silver coating is shaped to electrode pad
Electrode.Wherein, electrode pad is used for welding chip electrode, and electrode is used for linking circuits outside.It is heat sink to be layed in die bond position,
The position of die bond includes the position of metal and bonding wire.Backing thickness of the prior art typically in 0.4-1.5mm, at this moment in order to examine
Consider the heat resistance of material, and need to do frame, can not be made thin thin, the whole support of the present invention adopts 0.05-
0.10mm thick electrolytic copper foil is made, and adds other heat sink, silver coatings, and its gross thickness is being reduced still about 0.05-0.10mm
While cost, thermal diffusivity is improve.In addition, interlayer preferably use the siloxane polymer of vinyl made by interlayer, adopt
With the siloxane polymer of the vinyl so that the temperature tolerance of integral LED light source is high.
Step 2：Die bond：First support 10 is discharged in corresponding magazine, and carries out dehumidifying baking；By propping up that baking is finished
Frame 10, by braking bonder by LED chip 4, be fixed on support 10 it is heat sink on, wherein, first put solid again after die bond glue
(it can also be elargol that die bond glue can be insulating cement to LED chip 4.Middle low power chip prioritizing selection insulating cement, high-power choosing
Select elargol).The support 10 of good LED chip 4 admittedly is toasted, according to being toasted using specific crystal-bonding adhesive baking condition；
Step 3：Bonding wire：The support 10 containing LED chip 4 after by solidification, in the condition of 100 kPas of 5-10min of negative pressure
Under carry out plasma-based cleaning.Cleaning carries out bonding wire after finishing, and can carry out bonding wire with gold thread or alloy wire.For using powerful
Line of the LED chip 4 using 1.2-1.5mil.Middle low power selects the line of 0.9-1.0.Prioritizing selection gold thread；
Step 4：Dispensing and cutting, after die bond bonding wire step, by high viscosity organic fluorescence glue, (fluorescent glue is exactly
The material of fluorescent material and glue mix homogeneously) dispensing, (baking condition is dried according to the baking condition of corresponding glue for baking
It is roasting.), finally cut (cut for example with distilled water high-speed cutting method) and light splitting.The present invention is realized by above-mentioned technique
Low cost, high light flux, the LED packaging technologies of high stability.Wherein, the viscosity of the high viscosity fluorescent glue is 15000-
20000Pas.The high viscosity phosphor gel can put into hemispherical lens.Viscosity 1000- of the low viscosity fluorescent glue
8000Pas。
Wherein, the silver coating selects silver coating made by minute surface silver lustre, 4 light of LED chip is fully reflected, improves
The light efficiency of whole encapsulation.The overall structure of support 10 is planar structure, is used as reflecting layer by the minute surface silver lustre of bottom, fully carries
The high light extraction efficiency of whole encapsulation, has frame LED encapsulation heatproof higher than traditional；Heat sink 2 increasing and thinning general are effective
4 size of raising LED chip it is vertical with heat derive to the lower surface of substrate, beneficial to the quick heat radiating of whole LED chip 4, carry
The reliability of LED encapsulation is risen.Due to 10 planar structure of support, can not be limited by the dimensions of chip, the encapsulation is tied
The encapsulation power of LED can be brought up to 10W or so by structure.
The support 10 is made using the siloxane polymer high-temperature resistant plastics of vinyl.There is ethylene inside the support 10
The siloxane polymer plastic thickness of base is 0.05-0.1mm.
In addition, described heat sink 2 is metal heat sink 2.And heat sink 2 electricity for being shaped to the electrode pad in its another side
Pole.Meanwhile, for placing more than 3 times of the area of the metal heat sink of LED chip 4 more than electrode pad area.The area sets
The size that can improve chip placement is put, the power of whole encapsulation is improved, while also improving the transmission speed of 4 heat of LED chip
Degree.
Wherein, 4 heat transfer type of LED chip adopts horizontal and vertical radiating mode.4 maximum encapsulation power of LED chip is reachable
10W。
Although specifically showing and describing the present invention with reference to preferred embodiment, those skilled in the art should be bright
In vain, in the spirit and scope of the present invention limited without departing from appended claims, in the form and details can be right
The present invention makes a variety of changes, and is protection scope of the present invention.
Claims (8)
1. a kind of method for packing of Rimless LED, including making support, die bond, bonding wire, dispensing and cutting technique step, specifically
Comprise the steps：
Step 1：Make support：The thick electrolytic copper foils of 0.05-0.10mm are cut into into network structure, meanwhile, it is netted what is obtained
The positive and negative of structure encloses organic silica gel, and then the organic silica gel by network structure with two sides is pressed, and forms the support of lamellar；
Arrange heat sink at the position of die bond on the surface of support；Then one layer of this electroplating surface on heat sink support
Silver coating, silver coating THICKNESS CONTROL is in 80-150mil；Silver coating is provided with electrode pad, and electrode pad is arranged at and is equipped with heat
At the position of heavy silver coating, electrode pad includes both positive and negative polarity pad, between both positive and negative polarity pad arranges interlayer；
Step 2：Die bond：Dehumidifying baking is carried out to the support that step 1 is obtained, and LED chip is solidificated on support；
Step 3：Bonding wire：By the support after solidification LED chip, plasma-based cleaning 5- is carried out under conditions of 100 kPas of negative pressure
10min, cleaning carry out bonding wire after finishing；
Step 4：Dispensing and cutting, after die bond bonding wire step, by high-viscosity organic fluorescence glue point glue, then dry
It is roasting, finally cut and light splitting；The viscosity of the high-viscosity organic fluorescence glue is 15000-20000Pas.
2. the method for packing of Rimless LED according to claim 1, it is characterised in that：Bonding wire in step 3, is to adopt
Gold thread or alloy wire carry out bonding wire, for high-power LED chip is using the line of 1.2-1.5mil, the LED core of middle low power
Piece selects the line of 0.9-1.0mil.
3. the method for packing of Rimless LED according to claim 1, it is characterised in that：The silver coating is bright from minute surface
Silver coating made by silver, the overall structure of support is planar structure, and the minute surface silver lustre of the silver coating makes LED core as reflecting layer
Piece light fully reflects, and improves the light efficiency of whole encapsulation.
4. the method for packing of Rimless LED according to claim 1, it is characterised in that：In the step 4, shape after dispensing
Into the fluorescent glue of dome-type.
5. the method for packing of Rimless LED according to claim 1, it is characterised in that：It is described heat sink for metal heat sink, and
This is heat sink to be shaped to the electrode of electrode pad in its another side；Wherein, the area for placing the metal heat sink of LED chip is more than
More than 3 times of the area of electrode pad.
6. a kind of packaging system of Rimless LED, including the dome-type fluorescent glue of support and the LED chip on package support；
The positive and negative pressing of the support has organosilicon glue-line, and organosilicon glue-line, heat sink and silver coating are sequentially provided with support, heat sink to be located at
At the position of the die bond on support, silver coating lays whole rack surface；
LED chip is on silver coating；Silver coating thickness selects 120-150 ㏕, is matched with the heat sink surface, connects respectively
The positive and negative electrode of LED chip, with the standing part that the bottom with LED chip combines；
Silver coating is provided with electrode pad, and electrode pad is arranged at the position of the silver coating for being equipped with heat sink, electrode pad bag
Both positive and negative polarity pad is included, interlayer is set between both positive and negative polarity pad；
It is heat sink positioned at die bond position, the die bond position include for support electrode pad metal position and the position of bonding wire,
With the bottom surface that the silver coating corresponding with LED chip bottom is engaged.
7. the packaging system of Rimless LED according to claim 6, it is characterised in that：The interlayer is that the selection of material is
The siloxane polymer interlayer of vinyl.
8. the packaging system of Rimless LED according to claim 6, it is characterised in that：It is described heat sink for metal heat sink, and
This is heat sink to be shaped to the electrode of electrode pad in its another side；Wherein, the area for placing the metal heat sink of LED chip is more than
More than 3 times of the area of electrode pad.
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| CN105870297A (en) * | 2016-05-27 | 2016-08-17 | 福建鸿博光电科技有限公司 | LED light source and packaging method thereof |
| CN109327784B (en) * | 2018-12-03 | 2024-03-29 | 钰太芯微电子科技（上海）有限公司 | MEMS microphone of borderless equipment |
| TWI685098B (en) * | 2019-02-01 | 2020-02-11 | 同泰電子科技股份有限公司 | Spliced led circuit board |
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