CN109524392A - A kind of LED matrix of near ultraviolet excited white light - Google Patents

A kind of LED matrix of near ultraviolet excited white light Download PDF

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Publication number
CN109524392A
CN109524392A CN201811493313.XA CN201811493313A CN109524392A CN 109524392 A CN109524392 A CN 109524392A CN 201811493313 A CN201811493313 A CN 201811493313A CN 109524392 A CN109524392 A CN 109524392A
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China
Prior art keywords
near ultraviolet
white light
phosphor sheet
fluorescent powder
led chip
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CN201811493313.XA
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Chinese (zh)
Inventor
郭自泉
郑莉莉
雷烁迪
陈忠
吕毅军
朱丽虹
林岳
陈国龙
高玉琳
林苡
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Xiamen University
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Xiamen University
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Priority to CN201811493313.XA priority Critical patent/CN109524392A/en
Publication of CN109524392A publication Critical patent/CN109524392A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/508Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

A kind of LED matrix of near ultraviolet excited white light belongs to photoelectric information and technical field, including package substrate, electrode, phosphor sheet, reflector and near ultraviolet LED chip;Package substrate is set to the bottom of reflector;Electrode is installed in the two sides of package substrate;Near ultraviolet LED chip is fixed on package substrate and connect with electrode;Phosphor sheet is set to the top of reflector;The phosphor sheet is the phosphor sheet that three kinds of fluorescent powder films of red, green, blue three primary colours are formed according to the graphic joining being pre-designed in same layer.The present invention can improve the Photochromic Properties of the white light LEDs such as light efficiency or luminous flux, colour rendering index, color stability and the photochromic uniformity of white LED light source simultaneously.

Description

A kind of LED matrix of near ultraviolet excited white light
Technical field
The present invention relates to photoelectric informations and technical field, and in particular to a kind of LED matrix of near ultraviolet excited white light.
Background technique
By the development of more than ten years, the vision of LED illumination industry rises from high photosynthetic efficiency, low cost and energy conservation etc. To on to higher pursuits such as light quality, light health, photo-biological safety.Correlative study shows the blue light composition (wave in white light LEDs Long 450~480nm) human health (such as the biological clock etc. for influencing human body) can be had adverse effect on [document Nature, 2018,553(18):274].However white light LEDs can not only be obtained with blue-ray LED excitated fluorescent powder, it can also be by near ultraviolet LED It excites three kinds of fluorescent powders to realize, can effectively avoid stronger blue light adverse effect caused by human health.Near ultraviolet excitated White light LEDs have the congruent feature of spectrum, its spectrum almost covers the visible-range of 380~780nm, therefore colour developing refers to Number is higher.In addition, color stability is also preferable, i.e. the not influence vulnerable to the driving current of LED chip or driving voltage.
But compared with the relatively mature light activated white light LEDs of indigo plant of technology, at this stage near ultraviolet excitated white Light LED still has some critical issues not solved effectively, for example the cascade firing of more fluorescent powders, spectrum lack optimization etc., Cause the light efficiency of near ultraviolet excited white light at this stage still relatively relatively low, this is its development and the slow reason of application at present One of.Therefore, eliminating may be decreased outside white light LED part cost, how guarantee while high color rendering index (CRI), high color stability The light efficiency and light color spatial distribution uniformity of near ultraviolet excited white light LED are improved, it is more deep to it and be widely applied very It is important.
For improving near ultraviolet excitated white light light efficiency, Satoshi Kurai etc. proposes the lamination knot of three phosphor powder layers Structure [document Japanese Journal of Applied Physics, 2009,48 (11): 112101].In mixed structure, Since the excitation spectrum of the excitation spectrum of rouge and powder powder Chong Die with the emission spectra of green powder, blue powder, green respectively is Chong Die with the emission spectra of blue powder Reason, rouge and powder can absorb some blue light and green light issues feux rouges, green powder can absorb some blue light and excite as green light, i.e. cascade firing (cascade excitation) phenomenon.Compared with conventional hybrid structure, laminated construction can effectively reduce cascade firing phenomenon, from Light efficiency is improved to a certain extent, but in laminated construction, exciting light and transmitting light need to be emitted by multilayer material, herein mistake Cheng Zhong, light scattering, optical absorption loss will lead to light efficiency reduction.
Summary of the invention
It is an object of the invention to solve the above problem in the prior art, a kind of LED of near ultraviolet excited white light is provided It is white can to improve light efficiency or luminous flux, colour rendering index, color stability and photochromic uniformity of white LED light source etc. simultaneously for device The Photochromic Properties of light LED.
In order to achieve the above objectives, the present invention adopts the following technical scheme:
A kind of LED matrix of near ultraviolet excited white light, including package substrate, electrode, phosphor sheet, reflector and near ultraviolet LED chip;Package substrate is set to the bottom of reflector;Electrode is installed in the two sides of package substrate;Near ultraviolet LED chip is fixed on It is connect on package substrate and with electrode;Phosphor sheet is set to the top of reflector;The phosphor sheet is red, green, blue three primary colours The phosphor sheet that three kinds of fluorescent powder films are formed according to the graphic joining being pre-designed in same layer.
The invention also includes collector lens, the collector lens is covered on the top of phosphor sheet.
Silica gel or silicone resin are filled in the reflector.The package substrate can be metal substrate, printed circuit board, pottery Porcelain substrate or silicon substrate etc., the package substrate are rectangular, round or other shapes.
The near ultraviolet LED chip is semiconductor chip, such as gallium nitride series semiconductor chip, near ultraviolet LED chip Peak wavelength be 350~420nm;Near ultraviolet LED chip is that patch type SMD is encapsulated or COB is encapsulated and is fixed on package substrate Center;The number of UV LED chip is several, is series, parallel or series and parallel structure between near ultraviolet LED chip.
The preparation method of the phosphor sheet uses following two scheme.
Scheme 1: will by red, green, blue three primary colors fluorescent powder that near ultraviolet LED chip excites respectively with silica gel or silicone resin 1:(1~20 in proportion) red, green, blue three primary colors fluorescent powder glue is blended, it stirs evenly, then vacuum row steeps and in 80~200 It is heated and cured into fluorescent powder film at DEG C, cut three kinds of fluorescent powder films according to the figure being pre-designed and splices same One layer, that is, it is prepared into phosphor sheet.
Scheme 2: will by red, green, blue three primary colors fluorescent powder that near ultraviolet LED chip excites respectively with silica gel or silicone resin 1:(1~20 in proportion) red, green, blue three primary colors fluorescent powder glue is blended, it stirs evenly, is then applied according to the figure being pre-designed It covers on the transparent substrate, three primary colors fluorescent powder glue is heating and curing again at 80~200 DEG C finally, that is, is prepared into phosphor sheet. The transparent substrate includes quartz glass substrate, acrylic board or Graphene glass.
Three primary colors fluorescent powder is the phosphor material powder that can be excited by near ultraviolet LED chip, and specific composition is such as in the present invention Under: red fluorescence powder, CaAlSiN3:Eu2+;Green emitting phosphor, (Sr, Ba)2SiO2:Eu2+;Blue colour fluorescent powder, BaMgAl10O17: Eu2+.Can also using it is other can be by the phosphor material powder of near ultraviolet excitation, such as phosphate, aluminate, borate, molybdic acid Salt, nitrogen oxides, sulfide etc..
The silica gel or silicone resin and the silica gel or silicone resin that prepare phosphor sheet, light transmittance filled in the reflector are equal Greater than 90%.
The figure of the design includes " two fonts ", " Y-shaped ", " star font " and " circular ring type ", it is only necessary to by three kinds of bases The fluorescent powder film of color splices in same layer, so that it may achieve the effect that it is of the invention, but because same layer graphical scheme difference is led Cause the photochromic difference of synthesized white light, it is therefore desirable to design and optimize to obtain preferred plan by reasonable structure and size.
It is suitable for the fluorescence luminescent materials such as fluorescence ceramics, fluorescent glass, quantum dot.
Compared with the existing technology, the beneficial effect that technical solution of the present invention obtains is:
1, the present invention is using red (R), green (G) and blue (B) phosphor powder layer in the phosphor sheet of Graphic Design in space bit It sets in same layer and is separated from each other, light caused by fluorescent powder cascade firing and multiple fluorescent powder laminations can be efficiently reduced Scattering and absorption etc. are to improve light efficiency.
2, white light LEDs colour rendering index of the invention is high, color stability is high, carries out multiple light reflection etc., light using reflector Uniformity is preferable;Using remote excitation mode, is conducive to that phosphor sheet is protected not influenced by chip temperature, greatly improves device Or the service life and stability of device.The present invention is for pushing high-power near ultraviolet excited white light LED in lighting area Using being of great significance.
3, the excitation light source used in the present invention is near ultraviolet LED, compared to traditional blue LED excited yellow fluorescent powder, Influence of the blue light to human circadian and eyes etc. can be reduced, be conducive to human health.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention;
Fig. 2 is graphical phosphor sheet scheme designed by the present invention, respectively is " two fonts ", " Y word from left to right Type ", " star font " and " circular ring type ", R, G and B respectively represent red, green and blue fluorescent powder film in figure;
Fig. 3 is red of the phosphor sheet in the case where 395nm is near ultraviolet excitated, green and blue emission spectrum;
Fig. 4 is the white light color temperature value of the theoretical simulation under comparative example 1 and two kinds of structure light flux vs figures, structure A are to pass System laminated construction, structure B are structure of the invention;
Fig. 5 is the white light color temperature value of the theoretical simulation under comparative example 2 and two kinds of structure light flux vs figures, structure A are to pass System laminated construction, structure B are structure of the invention;
Fig. 6 is the white light color temperature value of the theoretical simulation under comparative example 3 and two kinds of structure light flux vs figures, structure A are to pass System laminated construction, structure B are structure of the invention;
Fig. 7 is the white light color temperature value of the theoretical simulation under comparative example 4 and two kinds of structure light flux vs figures, structure A are to pass System laminated construction, structure B are structure of the invention.
Appended drawing reference: phosphor sheet 1, reflector 2, near ultraviolet LED chip 3, filler material 4, collector lens 5.
Specific embodiment
In order to be clearer and more clear technical problems, technical solutions and advantages to be solved, tie below Drawings and examples are closed, the present invention is described in further details.
As shown in Figure 1, the present invention includes package substrate, electrode, phosphor sheet 1, reflector 2,3 and of near ultraviolet LED chip Collector lens 5.
The package substrate is set to the bottom (showing package substrate in figure) of reflector 2;Electrode is installed in encapsulation base The two sides of plate;The near ultraviolet LED chip 3 is fixed on package substrate and connect with electrode;Phosphor sheet 1 is set to reflector 2 Top;The collector lens 5 is covered on the top of phosphor sheet 1;It is filled out in the reflector 2 filled with silica gel or silicone resin etc. Charge 4.
In the present embodiment, the phosphor sheet 1 the preparation method is as follows: will be excited by near ultraviolet LED chip 3 it is red, Green, blue three primary colors fluorescent powder respectively with silica gel or silicone resin 1:(1~20 in proportion) blend red, green, blue three primary colors fluorescent powder Glue stirs evenly, and then vacuum row steeps and is heated and cured into fluorescent powder film at 80~200 DEG C, according to the figure being pre-designed Three kinds of fluorescent powder films are cut and are spliced in same layer by shape, that is, are prepared into phosphor sheet 1.
Three primary colors fluorescent powder is the phosphor material powder that can be excited by near ultraviolet LED chip 3, in the present embodiment specific composition It is as follows: red fluorescence powder, CaAlSiN3:Eu2+;Green emitting phosphor, (Sr, Ba)2SiO2:Eu2+;Blue colour fluorescent powder, BaMgAl10O17:Eu2+, as shown in figure 3, for red of the phosphor sheet 1 in the case where 395nm is near ultraviolet excitated in the present invention, green and Blue emission spectrum.
Fig. 2 is 1 scheme of graphical phosphor sheet designed by the present invention, respectively is " two fonts ", " Y from left to right Font ", " star font " and " circular ring type ", R, G and B respectively represent red, green and blue fluorescent powder film in figure.
The near ultraviolet LED chip 3 is gallium nitride semiconductor chip;Near ultraviolet LED chip 3 be patch type SMD encapsulate or COB is encapsulated and is fixed on the center of package substrate;The number of UV LED chip is several, is between near ultraviolet LED chip 3 Series, parallel or series and parallel structure.
A kind of LED matrix of near ultraviolet excited white light, assembling steps described in the present embodiment are as follows:
1, firstly, nearly UV LED chip 3 is fixed on package substrate center, chip both ends pass through gold thread and package substrate Two lateral electrodes connection;
2, then the phosphor sheet 1 of the red, green, blue three primary colours of above-mentioned graphical scheme is placed on reflector 2, and The packing materials such as filling gel 4 in reflector 2;
3, it may be optionally added collector lens 5, finally to realize uniformly mixed white light.
Working principle of the present invention is as follows:
1, near ultraviolet LED chip 3 issues black light first, and black light a part is directed through silica gel or silicone resin etc. Packing material, another part pass through the reflection of reflector 2, and common excitated fluorescent powder piece 1 generates the light of three kinds of colors, red, green, blue Three kinds of fluorescent powder films generate white light by the light common combination of lower the issued corresponding color of black light irradiation, and red, green, blue is glimmering Light arogel piece is spatially positioned at same layer but is spaced from each other, and can efficiently reduce fluorescent powder cascade firing and multiple fluorescent powders are folded Light scattering, light absorption caused by layer etc., can significantly improve light efficiency;
2, near ultraviolet LED chip 3 and phosphor sheet 1 of the present invention are apart from farther out, and mode of excitation is remote excitation mode, favorably It is influenced in protecting phosphor sheet 1 not by chip temperature, greatly improves the service life and stability of device or device;
3, the packing materials such as filling gel or silicone resin 4, the refraction of gallium nitride chip between reflector 2 and phosphor sheet 1 Rate is 2.4 or so, and the refractive index of silica gel or silicone resin is 1.4 or so, and the refractive index of fluorescent powder is 1.8 or so, phosphor gel Refractive index is not all between 1.4~1.8 according to mixed proportion, and the refractive index of air is 1, therefore, filling gel or silicon The materials such as resin advantageously reduce refringence, to improve light emission rate.
4, three kinds of fluorescent powder films are to be located on the same floor on spatial position in the present apparatus, can be incited somebody to action by addition polymerization optical lens 5 More uniform white light is realized in three kinds of photopolymerization being excited.
The present invention further compares structure of the invention and conventional stacked architectures reported in the literature by following 4 comparative examples Illustrate:
In this Experimental comparison, the ray trace method (Ray tracing) of Monte Carlo is theoretically used, mainly Reduced parameter is luminous flux.In theoretical simulation process, the phosphor sheet 1 that structure of the invention uses is by taking " two fonts " as an example.It is imitative In true parameter, the wavelength of near ultraviolet chip is 395nm or so, refractive index 2.48, the folding of three kinds of fluorescent powder films of red, green, blue The rate of penetrating is disposed as 1.73, and fluorescent powder quantum efficiency is respectively 92% (red), 92% (green), 65% (indigo plant), the thickness of phosphor sheet 1 Degree is 2mm, radius 10mm.
To simplify the analysis, do not consider Discussion on Light Diffusion Caused.In order to fully ensure that comparability, by adjusting in structure of the invention The physical area of " two fonts " structure red, green and blue fluorescent powder film, by the colour temperature of conventional stacked architectures and structure of the invention It is adjusted in similar situation compare (within several hundred K).
By simulation software, the different traditional lamination knot of red (R), green (G), blue (B) fluorescent powder molar concentration ratio is set Structure, in comparative example 1, red (R), green (G), blue (B) fluorescent powder molar concentration ratio are R:G:B=20:20:20;In comparative example 2, Red (R), green (G), blue (B) fluorescent powder molar concentration ratio are R:G:B=20:15:20;In comparative example 3, red (R), green (G), indigo plant (B) fluorescent powder molar concentration ratio is R:G:B=15:20:25;In comparative example 4, red (R), green (G), blue (B) fluorescent powder mole Concentration ratio is R:G:B=15:5:25.
The color temperature value of four comparative example conventional stacked architectures and structure of the invention in simulation software is set forth in Fig. 4~7 And chromaticity coordinates, wherein structure A is conventional stacked architectures, and structure B represents structure of the invention.
By comparison, it was found that structure of the invention and conventional stacked architectures compare in this four comparative examples, luminous flux difference Improve 16.5%, 7.7%, 20.5% and 4.7%.Moreover, structure of the invention is in appropriate adjustment three primary colors fluorescent powder film face The lower closer white light of Planckian locus for being easier to obtain chromaticity coordinates and chromaticity diagram of product.In particular, in comparative example four, this hair The chromaticity coordinates of bright structure and conventional stacked architectures also relatively in the case where, luminous flux also improves 4.7%.Therefore, this hair Bright structure can theoretically significantly improve about 3%~23% compared with conventional stacked architectures luminous flux.

Claims (10)

1. a kind of LED matrix of near ultraviolet excited white light, it is characterised in that: including package substrate, electrode, phosphor sheet, reflective Cup and near ultraviolet LED chip;Package substrate is set to the bottom of reflector;Electrode is installed in the two sides of package substrate;Near ultraviolet LED Chip is fixed on package substrate and connect with electrode;Phosphor sheet is set to the top of reflector;The phosphor sheet be it is red, The phosphor sheet that three kinds of fluorescent powder films of green, blue three primary colours are formed according to the graphic joining being pre-designed in same layer.
2. a kind of LED matrix of near ultraviolet excited white light as described in claim 1, it is characterised in that: it further include collector lens, The collector lens is covered on the top of phosphor sheet.
3. a kind of LED matrix of near ultraviolet excited white light as described in claim 1, it is characterised in that: filled out in the reflector Filled with silica gel or silicone resin.
4. a kind of LED matrix of near ultraviolet excited white light as described in claim 1, it is characterised in that: the phosphor sheet The preparation method is as follows: will by red, green, blue three primary colors fluorescent powder that near ultraviolet LED chip excites respectively with silica gel or silicone resin 1:(1~20 in proportion) red, green, blue three primary colors fluorescent powder glue is blended, it stirs evenly, then vacuum row steeps and in 80~200 It is heated and cured into fluorescent powder film at DEG C, cut three kinds of fluorescent powder films according to the figure being pre-designed and splices same One layer, that is, it is prepared into phosphor sheet.
5. a kind of LED matrix of near ultraviolet excited white light as described in claim 1, it is characterised in that: the phosphor sheet The preparation method is as follows: will by red, green, blue three primary colors fluorescent powder that near ultraviolet LED chip excites respectively with silica gel or silicone resin 1:(1~20 in proportion) red, green, blue three primary colors fluorescent powder glue is blended, it stirs evenly, is then applied according to the figure being pre-designed It covers on the transparent substrate, three primary colors fluorescent powder glue is heating and curing again at 80~200 DEG C finally, that is, is prepared into phosphor sheet.
6. a kind of LED matrix of near ultraviolet excited white light as claimed in claim 5, it is characterised in that: the transparent substrate packet Include quartz glass substrate, acrylic board or Graphene glass.
7. a kind of LED matrix of near ultraviolet excited white light as described in claim 3,4 or 5, it is characterised in that: the silica gel or The light transmittance of silicone resin is greater than 90%.
8. a kind of LED matrix of near ultraviolet excited white light as described in claim 1, it is characterised in that: the figure of the design Including " two fonts ", " Y-shaped ", " star font " and " circular ring type ".
9. a kind of LED matrix of near ultraviolet excited white light as described in claim 1, it is characterised in that: the near ultraviolet LED core Piece is semiconductor chip, and the peak wavelength of near ultraviolet LED chip is 350~420nm;Near ultraviolet LED chip is patch type SMD envelope Dress or COB are encapsulated and are fixed on the center of package substrate;The number of UV LED chip is several, between near ultraviolet LED chip For series, parallel or series and parallel structure.
10. a kind of LED matrix of near ultraviolet excited white light as described in claim 1, it is characterised in that: the package substrate is Metal substrate, printed circuit board, ceramic substrate or silicon substrate.
CN201811493313.XA 2018-12-07 2018-12-07 A kind of LED matrix of near ultraviolet excited white light Pending CN109524392A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110098305A (en) * 2019-05-15 2019-08-06 嘉兴学院 A kind of white light LED part and its manufacturing method
CN115820254A (en) * 2022-12-08 2023-03-21 广西贺源科技发展有限责任公司 Synthesis and application of near ultraviolet light excited molybdate red fluorescent powder

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101661987A (en) * 2009-09-15 2010-03-03 中山大学 White light LED packaging structure and packaging method thereof
CN201803141U (en) * 2010-06-05 2011-04-20 汕头高新区宏源达光电科技有限公司 LED bulb
CN102709280A (en) * 2012-05-29 2012-10-03 宁波升谱光电半导体有限公司 Chip on board (COB) integrated light source module
CN204648124U (en) * 2015-04-08 2015-09-16 绍兴欧柏斯光电科技有限公司 A kind of ultraviolet LED lamp
CN107425106A (en) * 2017-08-21 2017-12-01 苏州轻光材料科技有限公司 A kind of quantum dot combines burst of ultraviolel White LED light-emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101661987A (en) * 2009-09-15 2010-03-03 中山大学 White light LED packaging structure and packaging method thereof
CN201803141U (en) * 2010-06-05 2011-04-20 汕头高新区宏源达光电科技有限公司 LED bulb
CN102709280A (en) * 2012-05-29 2012-10-03 宁波升谱光电半导体有限公司 Chip on board (COB) integrated light source module
CN204648124U (en) * 2015-04-08 2015-09-16 绍兴欧柏斯光电科技有限公司 A kind of ultraviolet LED lamp
CN107425106A (en) * 2017-08-21 2017-12-01 苏州轻光材料科技有限公司 A kind of quantum dot combines burst of ultraviolel White LED light-emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110098305A (en) * 2019-05-15 2019-08-06 嘉兴学院 A kind of white light LED part and its manufacturing method
CN115820254A (en) * 2022-12-08 2023-03-21 广西贺源科技发展有限责任公司 Synthesis and application of near ultraviolet light excited molybdate red fluorescent powder

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Application publication date: 20190326