CN102468286A - Integrated light-emitting diode (LED) light source, and manufacturing method for light source - Google Patents
Integrated light-emitting diode (LED) light source, and manufacturing method for light source Download PDFInfo
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- CN102468286A CN102468286A CN2010105406738A CN201010540673A CN102468286A CN 102468286 A CN102468286 A CN 102468286A CN 2010105406738 A CN2010105406738 A CN 2010105406738A CN 201010540673 A CN201010540673 A CN 201010540673A CN 102468286 A CN102468286 A CN 102468286A
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- light source
- chip
- silica gel
- fluorescent material
- led
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
The invention provides an integrated light-emitting diode (LED) light source. The integrated LED light source comprises an array LED tube core, and a fluorescent powder layer; and a silica gel layer is arranged between the array LED tube core and the fluorescent powder layer. According to the integrated LED light source, the silica gel layer is arranged between the fluorescent powder layer and a chip array, so the influence of a positive-negative (PN) junction on fluorescent powder is reduced, luminous flux is increased, luminous decay is reduced, and the service life of the light source is prolonged.
Description
Technical field
The present invention relates to a kind of led light source, relate in particular to and a kind ofly have the led light source that special phosphor powder layer is arranged, and the painting method of this phosphor powder layer.
Background technology
LED (Lighting Emitting Diode) is a light-emitting diode, is a kind of semiconductor solid luminescence device.Current energy-conserving and environment-protective are global major issues, and the low-carbon (LC) life is rooted in the hearts of the people gradually.At lighting field, the application of power LED luminous product is just attracting common people's sight, and it is the novel illumination light source epoch of representative that 21st century will get into LED.LED has energy-saving and environmental protection, long, sound construction of life-span, and the response time is fast, colourity is pure, and colour gamut is wide; Energy gap has determined to be used for to show that there is not infrared, ultra-violet radiation in the LED of illumination, can not cause secondary pollution, can be widely used in various general lightings, backlight, demonstration equally, fields such as indication and urban landscape.Wherein the integrated LED light source is encapsulated into one of technology path of main flow.
For traditional integrated LED light source fluorescent material painting method, all be to adopt to apply fluorescent material, the method for silicon-coated glue-line more earlier.Fluorescent coating sticks to around the chip; And the surface temperature of chip is than higher; And fluorescent coating itself is to be formed by epoxy resin or silica gel and yellow fluorescent powder allotment; Heat dispersion is poor, the accumulation of heat make fluorescent coating temperature than higher state under work, therefore when use epoxy resin even carbonization phenomenon can occur.This heat can be introduced thermal stress simultaneously, makes material generation crackle, and the reliability of device is produced destructive influences.The PN junction temperature is higher, because fluorescent material is direct and chip contacts, the temperature of fluorescent material also increases, under the result of temperature action; The fluorescent material quantum efficiency reduces, and bright dipping reduces, and radiation wavelength also can change; Thereby make the light source light extraction efficiency lower, light decay increases, lifetime.
The mode of smearing of fluorescent material influences very big to the luminescence distribution of white light LEDs and the uniformity of colour temperature; Fluorescent material concentration one regularly; The fluorescent material thickness that runs in the probability that blue light is converted into gold-tinted and the blue light outgoing process is directly proportional, thereby the fluorescent material uneven thickness is the main cause that causes white light LEDs angle colour temperature difference.The position gold-tinted that fluorescent material thickness is thicker produces more, and colour temperature can be lower, and the smear layer that therefore on chip, forms must be uniform.
Summary of the invention
In order to solve existing technical problem in the background technology, the present invention proposes a kind of integrated LED light source, between phosphor powder layer and chip array, add one deck silica gel layer; Reduce of the influence of PN junction temperature to fluorescent material; Luminous flux increases, and light decay reduces, and makes the life-span of light source be able to prolong.
Technical solution of the present invention is: a kind of integrated LED light source, comprise array-type LED tube core, phosphor powder layer, and it is characterized in that: be provided with silica gel layer between said array-type LED tube core and the phosphor powder layer.
Above-mentioned array-type LED tube core is GaN blue chip or AlInGaN blue chip.
Above-mentioned phosphor powder layer is yellow fluorescence bisque, green phosphor layer or the red fluorescence bisque that PLE and blue light bare chip emission spectra are complementary.
A kind of manufacture method of integrated LED light source is characterized in that: said method comprising the steps of:
1) choose led chip and fluorescent material, said led chip is selected GaN blue chip or AlInGaN blue chip; Fluorescent material is chosen yellow fluorescent powder, green emitting phosphor or the red fluorescence powder that PLE and blue light bare chip emission spectra are complementary;
2) with the fluorescent material of choosing and silica gel with mass ratio 1: 0.5-1: 20 mix, and obtain corresponding colour temperature and chromaticity coordinates value with beam split color separation apparatus measures;
3) led chip is carried out solid crystalline substance;
4) between led chip and substrate, carry out routing;
5) at led chip surface-coated silica gel;
6) be 1 with fluorescent material and silica gel according to mass ratio: 0.5-1: 20 stir, and are coated in the chip surface that has applied silica gel in the step 5).
5, the manufacture method of integrated LED light source according to claim 4 is characterized in that: solid brilliant method is an elargol, tin cream or eutectic welding in the said step 3).
6, the manufacture method of integrated LED light source according to claim 5 is characterized in that: in the said step 4) method of routing be that gold ball bonding connects, aluminium wire ultrasonic bonding or copper wire bonding.
7, the manufacture method of integrated LED light source according to claim 6 is characterized in that: said coating silica gel and fluorescent material are the glue modes of natural levelling afterwards, perhaps adopt spraying, the mode of spin coating or the mode of inkjet printing.
Advantage of the present invention is:
1) led light source of the present invention adds one deck silica gel layer between phosphor powder layer and chip array; Thereby reduce of the influence of PN junction temperature to fluorescent material; Apply way with respect to traditional fluorescent material; Improve the luminous flux and the luminous efficiency of device under identical operating current, also made the light decay of device be able to reduce, prolonged the working life of device.
2) packaged type of employing integrated form can adopt the mode of nature levelling, thereby can reduce surface tension applies shape to fluorescent material influence greatly.And, on this basis, the mode that adopts spraying, spin coating or inkjet printing is arranged, can be so that the coating of fluorescent material be more even, thus make that the bright dipping color temperature difference mutation of all directions is little, more even, help illumination.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
Referring to Fig. 1; Integrated LED light source of the present invention; Comprise integrated LED light source heat radiation substrate 7, scolder 6, array-type LED tube core 5, silica gel layer 4, fluorescent material coat 3, electrode 2 and the positive and negative electrode metallic bond zygonema 1 of drawing from LED tube core 5; Led light source heat-radiating substrate 7 is fixed on array-type LED tube core 5 on the substrate through scolder 6, and silica gel layer 4 is coated on the substrate that fixes chip, and fluorescent material coat 3 is coated on the silica gel layer 4; Need on fluorescent material coat 3, to apply one deck silica gel layer 4 afterwards, LED die array 5 is accomplished fluently behind the line and need be connected also carrying out routing between tube core 5 electrodes and heat-radiating substrate 7 electrodes again.
Apply one deck silica gel layer on the LED blue light bare chip array layer after solid crystalline substance, routing are accomplished earlier, and then on silica gel layer, apply the layer of fluorescent powder layer.The painting method of silica gel layer and phosphor powder layer can be the mode of natural levelling in the integrated LED light source substrate, also can adopt the mode of spraying, spin coating or inkjet printing.
A kind of manufacture method of integrated LED light source may further comprise the steps:
1) choose led chip and fluorescent material, led chip is selected GaN blue chip or AlInGaN blue chip; Fluorescent material is chosen yellow fluorescent powder or green and the red fluorescence powder that PLE and blue light bare chip emission spectra are complementary;
2) with the fluorescent material of choosing and silica gel with mass ratio 1: 0.5-1: 20 mix, thereby obtain corresponding colour temperature and chromaticity coordinates value;
3) solid brilliant: it is solid brilliant to adopt manual or automatically solid brilliant machine.Can take the mode of an elargol, tin cream or eutectic welding;
4) routing: can adopt gold ball bonding to connect the perhaps mode of aluminium wire ultrasonic bonding, also can adopt the mode of copper wire bonding;
5) apply silica gel at chip surface; Can adopt automatically dropping glue machine or manual some glue, the mode of natural levelling then; Also can adopt the mode of spraying or spin coating;
6) be 1 with fluorescent material and silica gel according to mass ratio: 0.5-1: 20 stir, and are coated in the chip surface that has applied silica gel in the step 5).Can be the mode of natural levelling in the bowl cup of integrated LED light source substrate, also can adopt the mode of spraying, spin coating or inkjet printing.
Claims (7)
1. an integrated LED light source comprises array-type LED tube core, phosphor powder layer, it is characterized in that: be provided with silica gel layer between said array-type LED tube core and the phosphor powder layer.
2. integrated LED light source according to claim 1 is characterized in that: said array-type LED tube core is GaN blue chip or AlInGaN blue chip.
3. integrated LED light source according to claim 2 is characterized in that: said phosphor powder layer is yellow fluorescence bisque, green phosphor layer or the red fluorescence bisque that PLE and blue light bare chip emission spectra are complementary.
4. the manufacture method of an integrated LED light source is characterized in that: said method comprising the steps of:
1) choose led chip and fluorescent material, said led chip is selected GaN blue chip or AlInGaN blue chip; Fluorescent material is chosen yellow fluorescent powder, green emitting phosphor or the red fluorescence powder that PLE and blue light bare chip emission spectra are complementary;
2) with the fluorescent material of choosing and silica gel with mass ratio 1: 0.5-1: 20 mix, and obtain corresponding colour temperature and chromaticity coordinates value with beam split color separation apparatus measures;
3) led chip is carried out solid crystalline substance;
4) between led chip and substrate, carry out routing;
5) at led chip surface-coated silica gel;
6) be 1 with fluorescent material and silica gel according to mass ratio: 0.5-1: 20 stir, and are coated in the chip surface that has applied silica gel in the step 5).
5. the manufacture method of integrated LED light source according to claim 4 is characterized in that: solid brilliant method is an elargol, tin cream or eutectic welding in the said step 3).
6. the manufacture method of integrated LED light source according to claim 5 is characterized in that: in the said step 4) method of routing be that gold ball bonding connects, aluminium wire ultrasonic bonding or copper wire bonding.
7. the manufacture method of integrated LED light source according to claim 6 is characterized in that: said coating silica gel and fluorescent material are the glue modes of natural levelling afterwards, perhaps adopt the mode of spraying, spin coating, inkjet printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105406738A CN102468286A (en) | 2010-11-11 | 2010-11-11 | Integrated light-emitting diode (LED) light source, and manufacturing method for light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105406738A CN102468286A (en) | 2010-11-11 | 2010-11-11 | Integrated light-emitting diode (LED) light source, and manufacturing method for light source |
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| Publication Number | Publication Date |
|---|---|
| CN102468286A true CN102468286A (en) | 2012-05-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105406738A Pending CN102468286A (en) | 2010-11-11 | 2010-11-11 | Integrated light-emitting diode (LED) light source, and manufacturing method for light source |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104993034A (en) * | 2015-07-21 | 2015-10-21 | 广东广晟光电科技有限公司 | Novel LED packaging process |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2729906Y (en) * | 2004-10-13 | 2005-09-28 | 上海金桥大晨光电科技有限公司 | High-power LED colour mixture luminescent device |
| CN101452985A (en) * | 2008-12-31 | 2009-06-10 | 广东昭信光电科技有限公司 | Encapsulation structure and method for white light emitting diode device |
| CN101661987A (en) * | 2009-09-15 | 2010-03-03 | 中山大学 | White light LED packaging structure and packaging method thereof |
| CN201893339U (en) * | 2010-11-11 | 2011-07-06 | 西安麟字半导体照明有限公司 | Integrated type LED light source |
-
2010
- 2010-11-11 CN CN2010105406738A patent/CN102468286A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2729906Y (en) * | 2004-10-13 | 2005-09-28 | 上海金桥大晨光电科技有限公司 | High-power LED colour mixture luminescent device |
| CN101452985A (en) * | 2008-12-31 | 2009-06-10 | 广东昭信光电科技有限公司 | Encapsulation structure and method for white light emitting diode device |
| CN101661987A (en) * | 2009-09-15 | 2010-03-03 | 中山大学 | White light LED packaging structure and packaging method thereof |
| CN201893339U (en) * | 2010-11-11 | 2011-07-06 | 西安麟字半导体照明有限公司 | Integrated type LED light source |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104993034A (en) * | 2015-07-21 | 2015-10-21 | 广东广晟光电科技有限公司 | Novel LED packaging process |
| CN104993034B (en) * | 2015-07-21 | 2019-04-12 | 广东广晟光电科技有限公司 | A kind of LED encapsulation new process |
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Application publication date: 20120523 |