CN203118988U - Packaging structure of multi-chip high-color-rendering COB - Google Patents
Packaging structure of multi-chip high-color-rendering COB Download PDFInfo
- Publication number
- CN203118988U CN203118988U CN2013201010459U CN201320101045U CN203118988U CN 203118988 U CN203118988 U CN 203118988U CN 2013201010459 U CN2013201010459 U CN 2013201010459U CN 201320101045 U CN201320101045 U CN 201320101045U CN 203118988 U CN203118988 U CN 203118988U
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- CN
- China
- Prior art keywords
- light
- chip
- led chips
- cob
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
A packaging structure of a multi-chip high-color-rendering COB can prolong the service life of an efficient white-light light-emitting diode (LED) with adjustable color temperature and high color rendering. The packaging structure comprises blue-light LED chips, red-light LED chips, a silica-gel layer and a fluorescent powder layer. The LED chips are mounted at the center of a support, and the blue-light LED chips and the red-light LED chips are evenly distributed in staggered lines and are connected with a positive pole and a negative pole on the support through metal leads. An LED light source manager is used for adjusting currents on the red-light LED chips to adjust color temperature of white-light LEDs, and color rendering coefficients are improved. The silica-gel layer is located between the chips and fluorescent powder and completely covers the LED chips. The problem that performance of the fluorescent powder decays due to the fact that the chips are hot is avoided, and the service life is prolonged.
Description
Technical field
The encapsulating structure of the utility model COB is specifically related to the encapsulation technology of white light LEDs and remote fluorescent powder.
Background technology
Great power LED is used very extensive, can use various lighting fields, as street lamp, bulkhead lamp capable, explosion-proof lamp etc.At present, white light LEDs is to utilize highlighted blue chip to excite yellow fluorescent powder to send white light.An important component part is coated fluorescent material at chip exactly in the high-power blue-light excited white light LEDs encapsulation, and the blue light that sends by chip excites yellow fluorescent powder or mixed fluorescent powder to reach the effect of sending white light.The fluorescent material that uses at present both at home and abroad is the YAG bloom, and the method that generally adopts in the encapsulation process of high-power LED light source is directly fluorescent material to be coated on the chip by mixing professional glue spraying or putting down after finishing the encapsulation of chip.But this technology has several problems: the one, and the uniformity of the fluorescent material thickness of this encapsulation is difficult to be guaranteed preferably, can cause because the phosphor powder layer emission spectrum that causes in uneven thickness inhomogeneous; The 2nd, and since a fatal shortcoming of YAG fluorescent material be exactly when chip temperature is too high when its luminous efficiency decay can appear, spend as surpassing 65 degree or 70, decaying significantly can appear in the luminous efficiency of fluorescent material.The 3rd,, integrated high power LED encapsulation color rendering index generality is not high.
The utility model content
Have only white light great power LED and light extraction efficiency low in order to overcome, the utility model provides the adjustable white light source of a kind of colour temperature and the stable LED encapsulating structure of bright dipping.
The technical scheme that the utility model technical solution problem adopts is: the COB encapsulating structure of the high colour developing of a kind of multi-chip comprises led support, blue-light LED chip, red LED chip, layer of silica gel, phosphor powder layer.Described some led chips are installed in the support central authorities, and layer of silica gel is between chip and phosphor powder layer.Described blue light is the even distribution of line to be replaced with red LED chip and links to each other by the both positive and negative polarity of metal lead wire on support.Colour temperature by the electric current of LED power supervisor adjusting red LED chip is regulated white light LEDs improves color rendering index.Described layer of silica gel is between chip and fluorescent material, and layer of silica gel covers led chip fully.Avoided causing fluorescent material performance degradation, life-saving because of the chip heating.
Description of drawings:
Accompanying drawing 1 is this practical structure chart
Accompanying drawing 2 is led chip encapsulating structure schematic diagrames during the utility model is implemented
Accompanying drawing 3 is led chip encapsulation analysis face structural representations during the utility model is implemented
Embodiment
As shown in Figure 1, the utility model adopts blue light and red LED chip line to be replaced to be evenly distributed on the support, has improved the color rendering index of white light LEDs.
Among the described figure: 1, led support 2, blue-light LED chip 3, red LED chip 4, gold thread 5, phosphor powder layer 6, layer of silica gel
As shown in drawings, the high colour developing of the utility model multi-chip COB encapsulating structure comprises led support 1, blue-light LED chip 2, red LED chip 3 and phosphor powder layer 5, layer of silica gel 6.Described being characterised in that, some blue-light LED chips 2 and red LED chip 3 are line to be replaced and evenly are installed on the led support 1, and link to each other with both positive and negative polarity on the led support 1 by metal lead wire 4, are provided with layer of silica gel 6 between chip and phosphor powder layer 5.
Claims (2)
1. the encapsulating structure of the high colour developing of multi-chip COB, it is characterized in that: comprise led support, blue-light LED chip, red LED chip, layer of silica gel, phosphor powder layer, described blue light and red LED chip are evenly distributed in the led support central authorities, and layer of silica gel is between chip and phosphor powder layer.
2. the encapsulating structure of the high colour developing of a kind of multi-chip according to claim 1 COB, it is characterized in that: blue light and the red LED chip form with line to be replaced on support evenly distributes.
3
.The encapsulating structure of the high colour developing of a kind of multi-chip according to claim 1 COB, it is characterized in that: layer of silica gel covers on the led chip fully.
4
.The encapsulating structure of the high colour developing of a kind of multi-chip according to claim 1 COB, it is characterized in that: described phosphor powder layer has optical lens outward.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013201010459U CN203118988U (en) | 2013-03-06 | 2013-03-06 | Packaging structure of multi-chip high-color-rendering COB |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013201010459U CN203118988U (en) | 2013-03-06 | 2013-03-06 | Packaging structure of multi-chip high-color-rendering COB |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203118988U true CN203118988U (en) | 2013-08-07 |
Family
ID=48899307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013201010459U Expired - Fee Related CN203118988U (en) | 2013-03-06 | 2013-03-06 | Packaging structure of multi-chip high-color-rendering COB |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203118988U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106952996A (en) * | 2017-04-26 | 2017-07-14 | 深圳国冶星光电科技股份有限公司 | A kind of LED packagings and its method for packing |
| CN112599514A (en) * | 2020-12-31 | 2021-04-02 | 南京工业大学 | High-quality full-color semiconductor light source |
-
2013
- 2013-03-06 CN CN2013201010459U patent/CN203118988U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106952996A (en) * | 2017-04-26 | 2017-07-14 | 深圳国冶星光电科技股份有限公司 | A kind of LED packagings and its method for packing |
| CN112599514A (en) * | 2020-12-31 | 2021-04-02 | 南京工业大学 | High-quality full-color semiconductor light source |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: ZHENGZHOU SENYUAN NEW ENERGY TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HENAN SENYUAN ELECTRIC CO., LTD. Effective date: 20131119 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 461500 XUCHANG, HENAN PROVINCE TO: 450000 ZHENGZHOU, HENAN PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131119 Address after: 450000, Zhengzhou economic and Technological Development Zone, Henan Province, Third Avenue, north of longitude six South Patentee after: ZHENGZHOU SENYUAN NEW ENERGY TECHNOLOGY CO., LTD. Address before: Changge City, Xuchang City, Henan province 461500 Weiwu Road, South West Patentee before: Henan Senyuan Electric Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130807 Termination date: 20200306 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |