CN201180951Y - Low-color temperature white light LED device - Google Patents

Low-color temperature white light LED device Download PDF

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Publication number
CN201180951Y
CN201180951Y CNU2008201019626U CN200820101962U CN201180951Y CN 201180951 Y CN201180951 Y CN 201180951Y CN U2008201019626 U CNU2008201019626 U CN U2008201019626U CN 200820101962 U CN200820101962 U CN 200820101962U CN 201180951 Y CN201180951 Y CN 201180951Y
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CN
China
Prior art keywords
light led
led chip
blue
yellow
color temperature
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Expired - Fee Related
Application number
CNU2008201019626U
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Chinese (zh)
Inventor
何开钧
叶荣南
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XIAMEN CITY XIANDAI SEMICONDUCTOR LIGHTING INDUSTRIAL PROMOTION CENTER
Original Assignee
XIAMEN CITY XIANDAI SEMICONDUCTOR LIGHTING INDUSTRIAL PROMOTION CENTER
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Application filed by XIAMEN CITY XIANDAI SEMICONDUCTOR LIGHTING INDUSTRIAL PROMOTION CENTER filed Critical XIAMEN CITY XIANDAI SEMICONDUCTOR LIGHTING INDUSTRIAL PROMOTION CENTER
Priority to CNU2008201019626U priority Critical patent/CN201180951Y/en
Application granted granted Critical
Publication of CN201180951Y publication Critical patent/CN201180951Y/en
Anticipated expiration legal-status Critical
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Abstract

A lower color temperature white light LED device relates to a lighting diode, and solves the problem of the high color temperature of a high illumination white light LED. The white light LED device is provided with a blue light LED chip fixed to the upper surface of an aluminum seat and yellow light fluorescent powder coating the blue light LED chip; a yellow or red light LED chip is also fixed on the upper surface of the aluminum seat; a lens covers the upper surface of the aluminum seat and contains the yellow or red light LED chip and the blue light LED chip coated with the yellow light fluorescent powder. The lens can mix the yellow light emitted by the yellow or red light LED chip and the white light emitted by the high illumination white light LED, and emitted the lower color temperature white light close to the color temperature of sun light. Since the blue light LED chip and the yellow or red light LED chip are independent of each other, electrical parameters powering the two chips can be properly selected for the two chips according to the characteristics of electro-optical efficiency of the two chip, thereby achieving optimum electro-optical efficiency.

Description

The low color temperature white light LED device
Technical field
The utility model relates to a kind of light emitting diode.
Background technology
Existing high-brightness white-light light emitting diode (LED) in order to obtain best electricity/light conversion efficiency, adopts the blue-light LED chip of being made by InGaN (indium gallium nitrogen) material, and be fixed on the aluminium base more; At the surface of this blue-light LED chip coating gold-tinted fluorescent material, the lens made from plastic material cover and contain this blue-light LED chip and this gold-tinted fluorescent material again.The yellow fluorescence that the blue light that blue-light LED chip sends and this blue-light excited gold-tinted fluorescent material send is outwards launched white light after by the lens mixed light.But the white light colour temperature that this high-brightness white-light LED is launched is higher, has stimulation and illuminated object can produce the colour cast phenomenon that is different under the sunlight to human eye; Be not suitable for the illuminated object of eye-observation.Generally believe that in the industry desire reduces the colour temperature of white light LEDs, can adopt thickness that increases gold-tinted phosphor powder layer on the blue-light LED chip or the method that changes gold-tinted fluorescent material proportioning.And the relevant relation of the electricity/light conversion efficiency of the thickness of gold-tinted phosphor powder layer and white light LED part; For lowering thickness that colour temperature makes gold-tinted fluorescent material greater than its optimum thickness, the directly loss of increase blue light energy in the gold-tinted phosphor powder layer; Promptly reduce the electricity/light conversion efficiency of high-brightness white-light LED and increase heat dissipation capacity, thereby do not adopted in the industry.Electricity/the light conversion efficiency of same corresponding white light LEDs, the component of gold-tinted fluorescent material also have best proportioning; Sacrifice the proportioning that electricity/light conversion efficiency ground changes gold-tinted fluorescent material for lowering colour temperature, in fact also do not adopted in the industry.
The utility model content
The utility model aims to provide the high low color temperature white light LED device of a kind of electricity/light conversion efficiency.
The technical solution of the utility model is: the low color temperature white light LED device has blue-light LED chip that is fixed on the aluminium base upper surface and the gold-tinted fluorescent material that is coated on the blue-light LED chip.The upper surface of aluminium base also is fixed with gold-tinted or red LED chip; Lens cover the upper surface of aluminium base and contain gold-tinted or red LED chip and the blue-light LED chip that has gold-tinted fluorescent material.The white light that gold-tinted that the utility model sends with gold-tinted or red LED chip or ruddiness and high-brightness white-light LED send is outwards launched low color temperature white light near the sunlight colour temperature by the lens mixed light.Because blue-light LED chip and yellow light LED chip are separate, suitably select to realize best electricity/light conversion efficiency respectively to the electrical quantity of these two chip power supplies according to the electricity/light transfer characteristic of these two chips.
In a kind of enforcement structure: coating gold-tinted fluorescent material on the periphery surface that blue-light LED chip and yellow light LED chip expose, lens cover the upper surface of aluminium base and contain blue-light LED chip and yellow light LED chip and their periphery surfaces on gold-tinted fluorescent material.Because the gold-tinted phosphor powder layer can not absorb and stop the gold-tinted that the yellow light LED chip sends, and the thickness of gold-tinted phosphor powder layer can be provided with according to the best electricity/light conversion efficiency of blue-light LED chip.So the utility model low color temperature white light LED device can be realized best electricity/light conversion efficiency.
In the embodiment of a recommendation: the electrode of described blue-light LED chip and the electrode of yellow light LED chip identical polar become to electrically connect with aluminium base, and outwards draw with an exit, blue-light LED chip and the opposite polarity electrode of yellow light LED chip are outwards drawn with pin independently respectively.Can reduce by an extraction electrode, the connection line operation during convenient the application.
The utility model low color temperature white light LED device is provided with blue-light LED chip and gold-tinted or the red LED chip that scribbles gold-tinted fluorescent material on same aluminium base.And cover on the aluminium base and contain the yellow light LED chip and have the blue-light LED chip of gold-tinted fluorescent material with lens.Gold-tinted that high color temperature white light that the yellow fluorescence that the blue light that blue-light LED chip sends and this blue-light excited gold-tinted fluorescent material send mixes and gold-tinted or red LED chip send or ruddiness are outwards launched near the inclined to one side Huang of sunlight colour temperature or the low color temperature white light of redness by the lens mixed light.Electricity/light transfer characteristic according to blue-light LED chip and yellow light LED chip is suitably selected their power supply parameter, promptly can realize best electricity/light conversion efficiency.In the enforcement structure of optimizing, coating gold-tinted fluorescent material on the periphery surface that blue-light LED chip and yellow light LED chip are exposed, and by lens cover the upper surface of aluminium base and contain blue-light LED chip and yellow light LED chip and their periphery surfaces on gold-tinted fluorescent material.Guaranteeing to realize under the prerequisite of best electricity/light conversion efficiency convenient manufacturing processing.And then the electrode of electrode of aluminium base and blue-light LED chip and yellow light LED chip identical polar formed electrically connect, and outwards draw with an exit.Reduce by an extraction electrode, the connection line operation during convenient the application.
Description of drawings
Fig. 1 is the structural representation of an embodiment of the utility model low color temperature white light LED device.
Fig. 2 is the structural representation of another embodiment of the utility model low color temperature white light LED device.
The specific embodiment
One, embodiment one
The structure of an embodiment of the utility model low color temperature white light LED device, as shown in Figure 1.The yellow light LED chip 2 that the blue-light LED chip 1 that will make with InGaN (indium gallium nitrogen) material respectively with solid brilliant technology and AIGaInP (AlGaInP) material are made is fixed on the upper surface of aluminium base 5.The negative electrode of aluminium base 5 and blue-light LED chip 1 and the negative electrode of yellow light LED chip 2 form and electrically connect, and constitute the common cathode end of blue-light LED chip 1 and yellow light LED chip 2.The anode of blue-light LED chip 1 connects the upper end of first anode pin 102 through lead 101; Wear in the via hole 501 that is fixed on aluminium base 5 to the middle part insulation of first anode pin 102, outwards draw from the lower surface of aluminium base 5 bottom of first anode pin 102.The anode of yellow light LED chip connects the upper end of second plate pin 202 through lead 201; Wear in another via hole 502 that is fixed on aluminium base 5 to the middle part insulation of second plate pin 202, outwards draw from the lower surface of aluminium base 5 bottom of second plate pin 202.The gold-tinted fluorescent material made from YAG (yttrium-aluminium-garnet) material 3 is coated on the periphery surface that blue-light LED chip 1 and yellow light LED chip 2 expose.The lens 4 that PMMA optical plastic material is made cover the upper surface of aluminium base 5 and contain blue-light LED chip 1, yellow light LED chip 2 and gold-tinted fluorescent material 3.
Two, embodiment two
The structure of another embodiment of the utility model low color temperature white light LED device, as shown in Figure 2.The aluminium base 5 ' upper surface that has four via holes be provided with insulating barrier 501 ', insulating barrier 501 ' extend downwardly into form in four via holes isolated pipe 502 ', 503 ', 504 ', 505 '.Insulating barrier 501 ' isolated pipe 504 ' and isolated pipe 505 ' above be provided with blue-light LED chip 1 ', blue-light LED chip 1 ' anode tap 101 ' from isolated pipe 504 ' draw aluminium base 5 ', blue-light LED chip 1 ' cathode leg 102 ' from isolated pipe 505 ' draw aluminium base 5 '.Insulating barrier 501 ' isolated pipe 502 ' and isolated pipe 503 ' above be provided with red LED chip 2 '.Red LED chip 2 ' anode tap 201 ' from isolated pipe 502 ' draw aluminium base 5 ', red LED chip 2 ' cathode leg 202 ' from isolated pipe 503 ' draw aluminium base 5 '.Blue-light LED chip 1 ' upper surface be coated with gold-tinted fluorescent material 4 '.Lens 4 that PMMA optical plastic material is made ' cover aluminium base 5 ' insulating barrier 501 ' upper surface and contain red LED chip 2 ' and have gold-tinted fluorescent material 3 ' blue-light LED chip 1 '.
Sheet made of insulating material of blue-light LED chip 1 ' have support substrate 103 '.Support substrate 103 ' upper and lower end face respectively with layer of metal film, this double layer of metal film all is divided into small one and large one separated two parts.The part that the bigger part of upper strata metal film and lower metal film are bigger is corresponding, and by one run through support substrate 103 ' metallic rod they are connected into one, the main part of this metallic rod as blue-light LED chip 1 ' anode tap 101 ' from isolated pipe 504 ' draw aluminium base 5 '.The upper surface of upper strata metal film major part is provided with reflection/ohm/bonded layer, and the upper surface of reflection/ohm/bonded layer connects the P knot of the blue-ray LED crystal grain made from GaN (gallium nitrogen) material.The less part of the less part of upper strata metal film and lower metal film is corresponding, and by one run through support substrate 103 ' metallic rod they are connected into one, the main part of this metallic rod as blue-light LED chip 1 ' cathode leg 102 ' from isolated pipe 505 ' draw aluminium base 5 '.The upper surface of upper strata metal film smaller portions connects a metal bolt, the periphery of this metal bolt be coated with matcoveredn 105 '; The upper end of this metal bolt connects a metal tape, and the lower surface of this metal tape connects the N knot of blue-ray LED crystal grain.The N knot of blue-ray LED crystal grain and metal tape and protective layer three upper surface exposed portions coating gold-tinted fluorescent material 3 '.
Sheet made of insulating material of red LED chip 2 ' have support substrate 203 '.Support substrate 203 ' upper and lower end face respectively with layer of metal film, this double layer of metal film all is divided into small one and large one separated two parts.The part that the bigger part of upper strata metal film and lower metal film are bigger is corresponding, and by one run through support substrate 203 ' metallic rod they are connected into one, the main part of this metallic rod as red LED chip 2 ' anode tap 201 ' from isolated pipe 502 ' draw aluminium base 5 '.The upper surface of upper strata metal film major part is provided with reflection/ohm/bonded layer, and the upper surface of reflection/ohm/bonded layer connects the P knot of the red-light LED crystal grain made from GaAsP (gallium arsenic phosphide) material.The less part of the less part of upper strata metal film and lower metal film is corresponding, and by one run through support substrate 203 ' metallic rod they are connected into one, the main part of this metallic rod as red LED chip 2 ' cathode leg 202 ' from isolated pipe 503 ' draw aluminium base 5 '.The upper surface of upper strata metal film smaller portions connects a metal bolt, the periphery of this metal bolt be coated with matcoveredn 205 '; The upper end of this metal bolt connects a metal tape, and the lower surface of this metal tape connects the N knot of red-light LED crystal grain.
Above-mentioned blue-light LED chip 1 ' negative electrode and anode interior, and red LED chip 2 ' negative electrode and anode interior can adopt Reflow Soldering or eutectic welder to plant to realize connecting.Blue-light LED chip 1 ' supply current be 350 milliamperes, red LED chip 2 ' supply current be 20 milliamperes.
The blue-ray LED crystal grain of blue-light LED chip 1 ' also can adopt InGaAIN (indium-gallium-aluminum-nitrogen) material to make.And the yellow light LED crystal grain that adopts AIGaInP (AlGaInP) material accordingly make the yellow light LED chip substitute above-mentioned red LED chip 2 ', constitute a mutation that effect is identical of present embodiment.
The above only is the utility model preferred embodiment.Yet, do not limit the scope that the utility model is implemented with this.The equivalence of doing according to the technical solution of the utility model and description changes and modification, all should belong to the scope that the utility model is contained.

Claims (5)

1. the low color temperature white light LED device has blue-light LED chip that is fixed on the aluminium base upper surface and the gold-tinted fluorescent material that is coated on the blue-light LED chip; It is characterized in that: the upper surface of described aluminium base also is fixed with gold-tinted or red LED chip; Lens cover the upper surface of aluminium base and contain gold-tinted or red LED chip and the blue-light LED chip that has gold-tinted fluorescent material.
2. low color temperature white light LED device according to claim 1, it is characterized in that: coating gold-tinted fluorescent material on the periphery surface that blue-light LED chip and yellow light LED chip expose, lens cover the upper surface of aluminium base and contain blue-light LED chip and yellow light LED chip and their periphery surfaces on gold-tinted fluorescent material.
3. low color temperature white light LED device according to claim 2, it is characterized in that: the electrode of described blue-light LED chip and the electrode of yellow light LED chip identical polar become to electrically connect with aluminium base, and outwards draw with an exit, blue-light LED chip and the opposite polarity electrode of yellow light LED chip are outwards drawn with pin independently respectively.
4. low color temperature white light LED device according to claim 3, it is characterized in that: the negative electrode of the negative electrode of described blue-light LED chip and yellow light LED chip becomes to electrically connect with aluminium base, and outwards draw with an exit, the anode of blue-light LED chip and yellow light LED chip is outwards drawn with the via hole that pin insulation ground independently passes correspondence on the aluminium base respectively.
5. low color temperature white light LED device according to claim 3, it is characterized in that: the anode of the anode of described blue-light LED chip and yellow light LED chip becomes to electrically connect with aluminium base, and outwards draw with an exit, the negative electrode of blue-light LED chip and yellow light LED chip is outwards drawn with pin independently respectively.
CNU2008201019626U 2008-04-14 2008-04-14 Low-color temperature white light LED device Expired - Fee Related CN201180951Y (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101922624A (en) * 2010-04-09 2010-12-22 嘉兴嘉尼光电科技有限公司 High-power LED surface light source
WO2012031385A1 (en) * 2010-09-07 2012-03-15 深圳市众明半导体照明有限公司 Warm white light led chip with high brightness and high color rendering
CN101540362B (en) * 2009-04-23 2012-05-09 南京汉德森科技股份有限公司 Method for mixing light to form an LED warm white light source and light source structure therefrom
CN101482235B (en) * 2009-01-22 2012-05-30 深圳市聚飞光电股份有限公司 Color temperature-adjustable high-color development LED lamp and manufacturing method thereof
CN105333371A (en) * 2015-11-18 2016-02-17 上海瑞丰光电子有限公司 LED light emitting device
CN107919429A (en) * 2016-10-10 2018-04-17 广州市新晶瓷材料科技有限公司 A kind of high color rendering index (CRI) laser white light devices and its implementation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101482235B (en) * 2009-01-22 2012-05-30 深圳市聚飞光电股份有限公司 Color temperature-adjustable high-color development LED lamp and manufacturing method thereof
CN101540362B (en) * 2009-04-23 2012-05-09 南京汉德森科技股份有限公司 Method for mixing light to form an LED warm white light source and light source structure therefrom
CN101922624A (en) * 2010-04-09 2010-12-22 嘉兴嘉尼光电科技有限公司 High-power LED surface light source
WO2012031385A1 (en) * 2010-09-07 2012-03-15 深圳市众明半导体照明有限公司 Warm white light led chip with high brightness and high color rendering
CN105333371A (en) * 2015-11-18 2016-02-17 上海瑞丰光电子有限公司 LED light emitting device
CN107919429A (en) * 2016-10-10 2018-04-17 广州市新晶瓷材料科技有限公司 A kind of high color rendering index (CRI) laser white light devices and its implementation

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Assignee: Xiamen Tianneng Electronic Co., Ltd.

Assignor: Xiamen City Xiandai Semiconductor Lighting Industrial Promotion Center

Contract fulfillment period: 2009.10.10 to 2014.10.10

Contract record no.: 2009351000110

Denomination of utility model: Low-color temperature white light LED device

Granted publication date: 20090114

License type: Exclusive license

Record date: 20091208

LIC Patent licence contract for exploitation submitted for record

Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.10.10 TO 2014.10.10; CHANGE OF CONTRACT

Name of requester: XIAMEN TIANNENG ELECTRONICS CO., LTD.

Effective date: 20091208

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090114

Termination date: 20130414