CN101922624A - High-power LED surface light source - Google Patents

High-power LED surface light source Download PDF

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Publication number
CN101922624A
CN101922624A CN2010101470580A CN201010147058A CN101922624A CN 101922624 A CN101922624 A CN 101922624A CN 2010101470580 A CN2010101470580 A CN 2010101470580A CN 201010147058 A CN201010147058 A CN 201010147058A CN 101922624 A CN101922624 A CN 101922624A
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CN
China
Prior art keywords
led
light source
light
groove
red
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010101470580A
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Chinese (zh)
Inventor
邹军
南青霞
朱伟
林复基
陈俊荣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CANAL OPTOELECTRONIC TECHNOLOGY (JIAXING) Co Ltd
Original Assignee
CANAL OPTOELECTRONIC TECHNOLOGY (JIAXING) Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CANAL OPTOELECTRONIC TECHNOLOGY (JIAXING) Co Ltd filed Critical CANAL OPTOELECTRONIC TECHNOLOGY (JIAXING) Co Ltd
Priority to CN2010101470580A priority Critical patent/CN101922624A/en
Publication of CN101922624A publication Critical patent/CN101922624A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Led Device Packages (AREA)

Abstract

The invention discloses a high-power LED surface light source. A high-power LED light source with high color rendering and low color temperature is manufactured by mixing the light of white LEDs and the light of red LEDs into white light according to a certain ratio; a single white LED is coated with fluorescent powder; LED chips are fixed in respective independent metal grooves; the bottom and the lateral surface of the grooves are respectively provided with a layer of highly reflective membrane; a red LED groove is arranged in the middle of a white LED groove; the interval between the grooves is not more than 2 mm; a single groove can be provided with a lens or the grooves can be integrally covered by the lens; and different light effects are obtained by mixing the light of the white LEDs and the light of red LEDs according to different ratios. Under the condition of the same color temperature, the high-power LED surface light source has high luminous efficiency and good color rendering index compared with like products; the LED chips are welded with a soft circuit board on a substrate by a gold wire or a copper wire to reduce the impact on the chips in the welding process and improve the service life of the chips; the soft circuit board is directly attached on the substrate; the white LEDs and the red LEDs are provided with power in a shunting way; and the current can be adjusted.

Description

A kind of high-power LED surface light source
Technical field
The present invention relates to a kind of new type light source, relate in particular to high-power LED surface light source.
Background technology
As the novel semi-conductor light source, LED has very big advantage at aspects such as energy-saving and environmental protection and long-lives: energy consumption is 10% of an incandescent lamp, 50% of fluorescent lamp; Adopt solid encapsulation, sound construction, the life-span reaches 100,000 hours; Aspect environmental protection,, need not use glass evacuated encapsulation, the pollution of no poison gas and mercury with LED replace incandescent or fluorescent lamp.The high-power LED white of domestic batch process, luminous efficiency at 80～90Lm/W, also have the higher LED of luminous efficiency for generally in the laboratory, efficient can reach 90～100Lm/W, but because technologic problem, now production that also can't be in batches.On the light decay of LED, in 5000 hours, generally maintain in about 5%, also the LED light decay of some enterprise's production can be less than 3%, stability is higher, but is that large-scale popularization and application to LED brings difficulty because of there being a series of an open questions still, mainly contains following problem:
1, colour rendering index is low, and spectrum is discontinuous, and LED irradiation the photochromic of demonstration does not down have incandescent lamp true;
2, produce " hot spot ", because the mismatch error of the manufacturing process defective of white light LEDs lens own causes " yellow circle " problem easily;
3, luminous efficiency is low, forms the above great power LED luminous efficiency of commercial 3W and is lower than the above high-intensity gas discharge lamp of light efficiency 100lm/W, also is lower than the above rare-earth trichromatic fluorescent lamp of 60lm/W
4, the fuel factor problem is difficult for solving, the electric power that led chip flowed into has 75% can produce fuel factor, have only 25% can convert light to, that is to say increase along with power, led chip can produce higher heat, be difficult to prepare the above great power LED of 6W, many in the market is major product with the low-power LED, is unfavorable for the developing and the development of LED illumination market.
Summary of the invention
The objective of the invention is to overcome the deficiency of above-mentioned existence, provide that a kind of colour rendering is higher than 90, luminous efficiency is greater than the high-power LED surface light source of 90lm/W, good heat dissipation effect, long service life.
The present invention adopts white light LEDs and red-light LED to be mixed into white light at least 3: 1 ratio to prepare the high color rendering and high power LED light source, led chip is fixed in the metal groove of independently parabola shaped separately or other shapes, the bottom of groove and side are provided with one deck high-reflecting film, the red-light LED groove is positioned at the middle part of white light LEDs groove, spacing≤2mm between groove, can single on the groove be covered with lens, but also integral cap lens, led chip is by the welding of the FPC on gold thread or copper cash and the substrate, FPC directly is attached on the substrate, white light LEDs and red-light LED shunting power supply, electric current is adjustable.
The present invention adopts technique scheme, and every chips adopts the independent grooves encapsulation, makes the chip overall heat reduce, and has increased the chip cooling area, accelerates chip cooling speed, improves the service life of light source; Single even coating fluorescent powder of white light LEDs, integral body are lighted and are formed a uniform white light face, can not produce " macula lutea "; Every chips directly welds by gold thread with FPC, reduces in the bonding wire process impact to chip, raising chip stability; Adopt white light LEDs and red-light LED mixed light, improve whole color developing effect of light source and luminous efficiency.
Description of drawings
Fig. 1 is the led light source generalized section;
Fig. 2 is first kind of combination of led light source schematic diagram;
Fig. 3 Fig. 4 is led light source two kinds of combination schematic diagrames in addition.
The specific embodiment
The accompanying drawing of invention description and several embodiments by following detail can better understand the present invention, and in addition, various embodiment shown in the drawings are not to be limitation of the present invention or qualification, and only is explanation of the present invention and understanding for convenience.
Below in conjunction with accompanying drawing the present invention is done detailed introduction:
Light source adopts COM (Chip on Metal) area source encapsulation technology, white light LEDs 1 and red-light LED 2 are fixed in the independent metal groove 6 on the substrate 5 separately, the groove of red-light LED 2 is positioned at the middle part of white light LEDs groove, and shunting power supply, the bottom of groove and both sides scribble reflective membrane uniformly, chip 8 is by gold thread 3 or copper cash 3 and FPC 7 welding, FPC 7 directly is attached on the substrate 5, lens 4 can integral body also can cover by single groove, the proportioning of this invention by white light LEDs 1 and red-light LED 2 be different to obtain different technical indicators, specifically implements as follows:
Embodiment 1, works as ruddiness LED2 wavelength at 620nm as Fig. 2, white light LEDs 1 and red-light LED 2 ratios 3: 1 o'clock, and light source color temperature is controlled at 3000K ± 20K, colour rendering index 90, luminous efficiency 90lm/W.
Embodiment 2, work as ruddiness LED2 wavelength at 640nm as Fig. 3, white light LEDs 1 and red-light LED 2 ratios 4: 1 o'clock, and light source color temperature is controlled at 2900K ± 20K, colour rendering index 95, luminous efficiency 95lm/W.
Embodiment 3, work as ruddiness LED2 wavelength at 660nm as Fig. 4, white light LEDs 1 and red-light LED 2 ratios 5: 1 o'clock, and light source color temperature is controlled at 2800K ± 20K, colour rendering index 98, luminous efficiency 100lm/W.

Claims (9)

1. high-power LED light source, it includes: white light LEDs, red-light LED, substrate, lens is characterized in that described light source adopts COM (Chip on Metal) area source encapsulation technology to utilize white light LEDs (1) to mix with red-light LED (2), is prepared into the high color rendering and high power white light source, chip 8 welds by the FPC (7) that gold thread (3) or copper cash (3) are attached on the substrate (5), can cover lens (4) on it.
2. led light source according to claim 1 is characterized in that the ratio of described white light LEDs (1) and red-light LED (2) was at least 3: 1.
3. led light source according to claim 1 is characterized in that described red-light LED (2) wave-length coverage is 620～660nm.
4. led light source according to claim 1 is characterized in that described white light LEDs (1) and red-light LED (2) shunting power supply, and electric current is adjustable.
5. led light source according to claim 1 is characterized in that described substrate (5) is copper base or aluminium base.
6. led light source according to claim 1, it is characterized in that described substrate (5) adopts integral structure, FPC (7) directly is attached on the substrate (5), every chips 8 adopts independent grooves (6) encapsulation, welds by gold thread 3 or copper cash 3 between chip 8 and the FPC (7).
7. led light source according to claim 5, it is characterized in that described groove (6) is for being arranged on the metal groove (6) of parabola shaped or other shape on the substrate (5), the bottom and the side of groove (6) are provided with one deck high-reflecting film, red-light LED (2) groove (6) is positioned at the middle part of white light LEDs (1) groove (6), the spacing≤2mm between groove (6).
8. according to claim 6 or 7 described led light sources, it is characterized in that described groove (6) can singlely be provided with lens (4) and also can wholely cover lens (4).
9. led light source according to claim 7 is characterized in that described lens (4) can be square, circular or other shapes.
CN2010101470580A 2010-04-09 2010-04-09 High-power LED surface light source Pending CN101922624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010101470580A CN101922624A (en) 2010-04-09 2010-04-09 High-power LED surface light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010101470580A CN101922624A (en) 2010-04-09 2010-04-09 High-power LED surface light source

Publications (1)

Publication Number Publication Date
CN101922624A true CN101922624A (en) 2010-12-22

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CN (1) CN101922624A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102425737A (en) * 2011-12-14 2012-04-25 中山市共炫光电科技有限公司 High-efficient LED lamp
CN102606920A (en) * 2012-03-03 2012-07-25 江苏索尔光电科技有限公司 LED lamp panel
CN102734645A (en) * 2011-04-01 2012-10-17 上海广茂达光艺科技股份有限公司 Led projection lamp
CN102878467A (en) * 2012-10-19 2013-01-16 杭州纳晶照明技术有限公司 Low-color-temperature lighting component
US20140254166A1 (en) * 2013-03-11 2014-09-11 Samsung Electronics Co., Ltd. Light emitting diode lighting and method of manufacturing lighting
CN104712940A (en) * 2015-04-08 2015-06-17 广州广日电气设备有限公司 LED lamp with lens
CN104930425A (en) * 2014-03-19 2015-09-23 深圳市海洋王照明工程有限公司 Locomotive lamp
CN108288668A (en) * 2018-01-11 2018-07-17 宜兴市旭航电子有限公司 A kind of five foot Full-color LED encapsulation structures
CN111107690A (en) * 2020-01-16 2020-05-05 区江枫 LED lamp bead assembly and color temperature adjusting method thereof
CN111140824A (en) * 2019-12-28 2020-05-12 广州达森灯光股份有限公司 Color mixing method of LED lamp

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060065957A1 (en) * 2004-09-24 2006-03-30 Akihiko Hanya Light emitting diode device
CN1848463A (en) * 2005-04-15 2006-10-18 南京汉德森科技股份有限公司 LED white light source based on metal circuit board
CN201180951Y (en) * 2008-04-14 2009-01-14 厦门市现代半导体照明产业化促进中心 Low-color temperature white light LED device
CN101540362A (en) * 2009-04-23 2009-09-23 南京汉德森科技股份有限公司 Method for mixing light to form an LED warm white light source and light source structure therefrom

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060065957A1 (en) * 2004-09-24 2006-03-30 Akihiko Hanya Light emitting diode device
CN1848463A (en) * 2005-04-15 2006-10-18 南京汉德森科技股份有限公司 LED white light source based on metal circuit board
CN201180951Y (en) * 2008-04-14 2009-01-14 厦门市现代半导体照明产业化促进中心 Low-color temperature white light LED device
CN101540362A (en) * 2009-04-23 2009-09-23 南京汉德森科技股份有限公司 Method for mixing light to form an LED warm white light source and light source structure therefrom

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102734645B (en) * 2011-04-01 2016-11-23 上海广茂达光艺科技股份有限公司 Led projection lamp
CN102734645A (en) * 2011-04-01 2012-10-17 上海广茂达光艺科技股份有限公司 Led projection lamp
CN102425737A (en) * 2011-12-14 2012-04-25 中山市共炫光电科技有限公司 High-efficient LED lamp
CN102606920A (en) * 2012-03-03 2012-07-25 江苏索尔光电科技有限公司 LED lamp panel
CN102878467A (en) * 2012-10-19 2013-01-16 杭州纳晶照明技术有限公司 Low-color-temperature lighting component
CN102878467B (en) * 2012-10-19 2015-02-11 纳晶科技股份有限公司 Low-color-temperature lighting component
CN104048198A (en) * 2013-03-11 2014-09-17 三星电子株式会社 LIGHT EMITTING DIODE LIGHTING device AND METHOD OF MANUFACTURING same
US20140254166A1 (en) * 2013-03-11 2014-09-11 Samsung Electronics Co., Ltd. Light emitting diode lighting and method of manufacturing lighting
CN104930425A (en) * 2014-03-19 2015-09-23 深圳市海洋王照明工程有限公司 Locomotive lamp
CN104712940A (en) * 2015-04-08 2015-06-17 广州广日电气设备有限公司 LED lamp with lens
CN108288668A (en) * 2018-01-11 2018-07-17 宜兴市旭航电子有限公司 A kind of five foot Full-color LED encapsulation structures
CN111140824A (en) * 2019-12-28 2020-05-12 广州达森灯光股份有限公司 Color mixing method of LED lamp
CN111107690A (en) * 2020-01-16 2020-05-05 区江枫 LED lamp bead assembly and color temperature adjusting method thereof

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Open date: 20101222