CN101030610B - Large-power light-emitting diodes and its fluorescent-powder coating method - Google Patents
Large-power light-emitting diodes and its fluorescent-powder coating method Download PDFInfo
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- CN101030610B CN101030610B CN2006100497039A CN200610049703A CN101030610B CN 101030610 B CN101030610 B CN 101030610B CN 2006100497039 A CN2006100497039 A CN 2006100497039A CN 200610049703 A CN200610049703 A CN 200610049703A CN 101030610 B CN101030610 B CN 101030610B
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- 239000000843 powder Substances 0.000 title claims abstract description 18
- 238000000576 coating method Methods 0.000 title claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000000741 silica gel Substances 0.000 claims abstract description 42
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 229960001866 silicon dioxide Drugs 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 23
- 239000003292 glue Substances 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 6
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 230000003068 static effect Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000000499 gel Substances 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000003825 pressing Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000009193 crawling Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention is concerned with the high-power light-emitting diode and the fluorescence powder coating method. It consists of the chip, the lead, the bracket, the compound of the fluorescence powder and the silica gel, the silica gel and the border, the chip connects with the bracket by the lead, the border sets on the bracket, the chip sets in the border, the bottom of the chip connects with the border, coatings the compound of the fluorescence powder and the silica gel on the chip that is in the core plate, coatings the silica gel out of the compound of the fluorescence powder and the silica gel. The manufacture technisc is: extends core - sets border - dots silver gel -curing crystal and drying - clears - welds line - dots gel - curing - second dots gel - curing silicon gel - pressings - devices light and color.
Description
Technical field
The present invention relates to a kind of light-emitting diode and coating process thereof, especially relevant with large-power light-emitting diodes and coating process thereof.
Background technology
So-called white light is the light that multiple blend of colors forms, at least must mix by two kinds of light with the form of white light that human eyes can be seen, as two wavelength light (blue light+sodium yellow) or three-wavelength light (blue light+green light+red light), commercial at present product only has two wavelength blue light single-chips to add yellow fluorescent powder.As following fluorescent lamp, U type power saving bulb and LCD (LCD) backlight etc. of replacing of new type light source, can significantly reduce the consumption of electric energy as white light emitting diode (LED), really accomplish environmental protection.
At technical elements, white light emitting diode (LED) main illumination mode at present is that day indium gallium nitride with 460 nano wave lengths (InGaN) blue chip of inferior chemistry (Nichia) is coated with one deck YAG fluorescent material, utilize blue light-emitting diode (LED) to shine this fluorescent material with the 555 nano wave length gold-tinteds of generation with the blue light complementation, utilize lens principle that gold-tinted, the blue light of complementation are mixed again, draw the white light that finding of naked eye arrives.
But the way of this white light is to mix with fluorescent material with conventional resins, and because of phosphor's density big (being 4.3 ± 0.1 microns), and the resin density that mixes with it is little, so fluorescent material is bound to produce precipitation, thereby influences its uniformity.The blue light wafer is the square external form in addition, thereby can produce the arcuation phosphor mixture after being coated with generic point glue mode cause the spacing of wafer and fluorescent powder grain inconsistent, be bound to produce crawling phenomenons such as yellow circle or blue circle, and it is fast apart from the decay of near fluorescent powder grain, so along with the lengthening of service time, the glow color of large-power light-emitting diodes also can be inhomogeneous.
Summary of the invention
The purpose of this invention is to provide a kind of rational in infrastructure, craft science, fluorescent material coating evenly, luminous evenly, the large-power light-emitting diodes of high conformity and fluorescent-powder coating method thereof.
For achieving the above object, the present invention realizes by following technical solution: large-power light-emitting diodes comprises chip, lead, support, fluorescent material and silica-gel mixture, silica gel and frame, chip is wired on the support, and frame is a little square transparent frame, and is located at the frame bottom middle, chip is located in the frame, the chip below is connected with support, and fluorescent material and silica-gel mixture are coated on the interior chip of frame, also are coated with silica gel outside fluorescent material and silica-gel mixture.
The fluorescent-powder coating method of large-power light-emitting diodes is: a. expands core: the core dish is expanded core; make its spacing meet production requirement; b., frame is set: a frame is set on support; c. put elargol: put elargol on the large-power light-emitting diodes support circuitry in frame; d. solid brilliant oven dry: chip attach on elargol; baking and curing under 150 ℃ of-180 ℃ of temperature then; e. clean: the spray of electricity consumption slurry ion is hit and is cleaned support and chip surface; f. bonding wire: use the ultrasonic bonding lead; the chip both positive and negative polarity is connected on the high-power circuit support; g. put glue: coat on the interior chip of frame with fluorescent material and silica-gel mixture; h. solidify: under 150 ℃ of-180 ℃ of temperature; full solidification fluorescent material and silica-gel mixture; i. secondary point glue: in support, carry out secondary point silica gel on fluorescent material and the silica-gel mixture; j. solidify silica gel: under 150 ℃ of-180 ℃ of temperature; full solidification silica gel; k. punching press: the large-power light-emitting diodes support is put into the punch die machine strike out single product; l. beam split color separation: test the beam split color separation according to beam split branch colour standard
More than all technical processs all adopt static to eliminate or static suppresses means.
The present invention compared with prior art has the following advantages: (one) is that fluorescent material is evenly distributed, and makes the blue-light excited fluorescent powder grain of acceptance even, thereby guarantees luminous uniformity consistency; (2) be luminous efficiency more than 35 lumens/watt, high conformity is used in stable performance and luminously evenly produce in batches, can be widely used in special lighting, general lighting etc.; (3) be to use the life-span can reach 100,000 hours, the heat that sends in the use is low, and fluorescent material is difficult for degenerating, so luminous efficiency can not reduce, power consumption is little, and energy-saving effect is very remarkable.
Description of drawings
Fig. 1 is the structural representation of large-power light-emitting diodes of the present invention.
Fig. 2 is the wave spectrogram of large-power light-emitting diodes of the present invention.
Fig. 3 is the lighting angle figure of large-power light-emitting diodes of the present invention.
Fig. 4 is the forward current and the forward voltage characteristic figure of large-power light-emitting diodes of the present invention.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are described in further detail.
Embodiment 1: as shown in Figure 1, large-power light-emitting diodes, comprise chip 1, lead 2, support 3, fluorescent material and silica-gel mixture 4, frame 5 and silica gel 6, chip 1 is connected on the support 3 by lead 2, frame 5 is a little square transparent frame, and is located at middle, support 3 bottom, and chip 1 is located in the frame 5, chip 1 below is connected with support 3, fluorescent material and silica-gel mixture 4 are coated on the frame 5 interior chips 1, also are coated with silica gel 6 outside fluorescent material and silica-gel mixture 4, and chip 1 adopts wide waveband 2.5 nanometers, the Ni/Au nitride blue LED chip of wavelength 462.5～465 nanometers, fluorescent material is the cerium-doped yttrium aluminum garnet fluorescent powder, and the ratio of fluorescent material and silica-gel mixture 4 is a fluorescent material: silica gel=1: 50.
Embodiment 2: as shown in Figure 1, the fluorescent-powder coating method of large-power light-emitting diodes is:
A. expand core: the core dish is expanded core, make its spacing meet production requirement,
B., frame is set: a little square transparent frame 5 is set on support 3, and is located at middle, support 3 bottom,
C. put elargol: put elargol on large-power light-emitting diodes support 3 circuit in little square transparent frame 5,
D. solid brilliant oven dry: chip 1 is sticked on the elargol, baking and curing under 150 ℃ of-180 ℃ of temperature then,
E. clean: the spray of electricity consumption slurry ion is hit and is cleaned support 3 and chip 1 surface,
F. bonding wire: use ultrasonic bonding lead 2, chip 1 both positive and negative polarity is connected on the high-power circuit support 3,
G. put glue: coat on the little square transparent frame 5 interior chips 1 with fluorescent material and silica-gel mixture 4,
H. solidify: under 150 ℃ of-180 ℃ of temperature, full solidification fluorescent material and silica-gel mixture 4,
I. secondary point glue: in support 3, carry out secondary point silica gel on fluorescent material and the silica-gel mixture 4,
J. solidify silica gel: under 150 ℃ of-180 ℃ of temperature, full solidification silica gel,
K. punching press: large-power light-emitting diodes support 3 is put into the punch die machine strike out single product,
L. beam split color separation: test the beam split color separation according to beam split branch colour standard,
More than all technical processs all adopt static to eliminate or static suppresses means.
The wave spectrogram of the large-power light-emitting diodes by the manufacturing of present embodiment fluorescent-powder coating method is seen Fig. 2, and lighting angle figure sees Fig. 3, and forward current and forward voltage characteristic figure see Fig. 4.
Embodiment of the invention the key technical indexes:
1, outward appearance do not have that glue splits, oxidation, colloid breakage, in conjunction with bad; No fluorescent material is separated out, no fluorescent powder grain impurity.
2, Wu Huangquan, luminous even, no hot spot.
3, chromaticity coordinate: standard color temperature 6500K can change colour temperature according to different requirements.
4, luminous efficiency height: under the luminous intensity 350mA more than luminous efficiency 35 lumens/watt.When reverse voltage was 5V, leakage current was less than 100 μ A.
5, high conformity is produced in stable performance and luminous even in batches.
Claims (3)
1. large-power light-emitting diodes, comprise chip (1), lead (2), support (3), fluorescent material and silica-gel mixture (4) and silica gel (6), chip (1) is connected on the support (3) by lead (2), it is characterized in that: it also comprises frame (5), frame (5) is a little square transparent frame, and be located at middle, support (3) bottom, chip (1) is located in the frame (5), and chip (1) below is connected with support (3), fluorescent material and silica-gel mixture (4) are coated on the interior chip of frame (5) (1), also are coated with silica gel (6) outside fluorescent material and silica-gel mixture (4).
2. large-power light-emitting diodes according to claim 1, it is characterized in that: chip (1) is the Ni/Au nitride blue LED chip of wide waveband 2.5 nanometers, wavelength 462.5～465 nanometers, fluorescent material is the cerium-doped yttrium aluminum garnet fluorescent powder, and the ratio of fluorescent material and silica-gel mixture (4) is a fluorescent material: silica gel=1: 40-60.
3. the fluorescent-powder coating method of a large-power light-emitting diodes as claimed in claim 1 or 2 is characterized in that its method is:
A. expand core: the core dish is expanded core, make its spacing meet production requirement,
B., frame is set: a frame (5) is set on support (3),
C. put elargol: put elargol on large-power light-emitting diodes support (3) circuit in frame (5),
D. solid brilliant oven dry: chip (1) is sticked on the elargol, baking and curing under 150 ℃ of-180 ℃ of temperature then,
E. clean: the spray of electricity consumption slurry ion is hit and is cleaned support (3) and chip (1) surface,
F. bonding wire: use ultrasonic bonding lead (2), chip (1) both positive and negative polarity is connected on the high-power circuit support (3),
G. put glue: coat on the interior chip of frame (5) (1) with fluorescent material and silica-gel mixture (4),
H. solidify: under 150 ℃ of-180 ℃ of temperature, full solidification fluorescent material and silica-gel mixture (4),
I. secondary point glue: in support (3), carry out secondary point silica gel on fluorescent material and the silica-gel mixture (4),
J. solidify silica gel: under 150 ℃ of-180 ℃ of temperature, full solidification silica gel,
K. punching press: large-power light-emitting diodes support (3) is put into the punch die machine strike out single product,
L. beam split color separation: test the beam split color separation according to beam split branch colour standard,
More than all technical processs all adopt static to eliminate or static suppresses means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100497039A CN101030610B (en) | 2006-03-05 | 2006-03-05 | Large-power light-emitting diodes and its fluorescent-powder coating method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2006100497039A CN101030610B (en) | 2006-03-05 | 2006-03-05 | Large-power light-emitting diodes and its fluorescent-powder coating method |
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| Publication Number | Publication Date |
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| CN101030610A CN101030610A (en) | 2007-09-05 |
| CN101030610B true CN101030610B (en) | 2011-06-15 |
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| CN2006100497039A Expired - Fee Related CN101030610B (en) | 2006-03-05 | 2006-03-05 | Large-power light-emitting diodes and its fluorescent-powder coating method |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101436628B (en) * | 2007-11-16 | 2012-01-25 | 广州市鸿利光电股份有限公司 | Technological process for coating fluorescent powder of high-power chip |
| CN102537872A (en) * | 2011-01-04 | 2012-07-04 | 康佳集团股份有限公司 | Direct illumination type light emitting diode (LED) backlight module and manufacturing method thereof |
| CN102169951A (en) * | 2011-01-28 | 2011-08-31 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) packaging structure for improving light emitting efficiency and manufacturing method thereof |
| CN102403423B (en) * | 2011-11-18 | 2014-10-29 | 深圳市天电光电科技有限公司 | Preparation technology for LED fluorescent adhesive layer and packaging structure formed by the same |
| CN102637810A (en) * | 2012-04-25 | 2012-08-15 | 中国科学院半导体研究所 | LED (light-emitting diode) packaging structure and packaging molding method |
| CN104051598A (en) * | 2013-03-12 | 2014-09-17 | 安徽湛蓝光电科技有限公司 | LED packaging method of steel-mesh-type silkscreen fluorescent glue |
| CN103456868A (en) * | 2013-09-09 | 2013-12-18 | 昆山奥德鲁自动化技术有限公司 | Method for packaging large-power LED chip |
| CN113675318A (en) * | 2021-07-29 | 2021-11-19 | 广东长利光电科技有限公司 | Preparation process of moistureproof paster lamp bead |
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| CN1667848A (en) * | 2005-04-04 | 2005-09-14 | 江苏奥雷光电有限公司 | Fluorescent powder coating process for high-power light-emitting diode |
| CN1226384C (en) * | 2003-07-10 | 2005-11-09 | 中国海洋大学 | Method for preparing luminescent powder of light emitting diode in white light with high brightness and adjustable wavelength |
| CN2745220Y (en) * | 2004-05-09 | 2005-12-07 | 王亚盛 | Large power multi-die integrated LED module |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1226384C (en) * | 2003-07-10 | 2005-11-09 | 中国海洋大学 | Method for preparing luminescent powder of light emitting diode in white light with high brightness and adjustable wavelength |
| CN2745220Y (en) * | 2004-05-09 | 2005-12-07 | 王亚盛 | Large power multi-die integrated LED module |
| CN1667848A (en) * | 2005-04-04 | 2005-09-14 | 江苏奥雷光电有限公司 | Fluorescent powder coating process for high-power light-emitting diode |
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