CN105627113A - High-power LED plant growing lamp unit and plant growing lamp - Google Patents
High-power LED plant growing lamp unit and plant growing lamp Download PDFInfo
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- CN105627113A CN105627113A CN201610023394.1A CN201610023394A CN105627113A CN 105627113 A CN105627113 A CN 105627113A CN 201610023394 A CN201610023394 A CN 201610023394A CN 105627113 A CN105627113 A CN 105627113A
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Classifications
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G7/00—Botany in general
- A01G7/04—Electric or magnetic or acoustic treatment of plants for promoting growth
- A01G7/045—Electric or magnetic or acoustic treatment of plants for promoting growth with electric lighting
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
- Y02P60/14—Measures for saving energy, e.g. in green houses
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biodiversity & Conservation Biology (AREA)
- Botany (AREA)
- Ecology (AREA)
- Forests & Forestry (AREA)
- Environmental Sciences (AREA)
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- Led Device Packages (AREA)
Abstract
The invention discloses a high-power LED plant growing lamp unit. The high-power LED plant growing lamp unit comprises one or more than one high-power blue light LED chip, an optical lens, an ESD protecting assembly, a red light converting layer, a printing circuit and a heat dissipation substrate, wherein the printing circuit penetrates through the heat dissipation substrate and covers the upper surface and the lower surface of the heat dissipation substrate; the high-power blue light LED chips are mounted on the printing circuit or the heat dissipation substrate and are connected with the printing circuit; the red light converting layer is arranged outside the high-power blue light LED chips in a conformal coating or a semi-spherical coating mode; the optical lens wraps the red light converting layer; and the ESD protecting assembly is connected with the printing circuit and is in parallel connection with the high-power blue light LED chips. The high-power LED plant growing lamp unit has relatively high optical power output property, and is uniform in spectrum space distribution, relatively simple in circuit control and relatively low in cost.
Description
Technical Field
The invention belongs to the technical field of manufacturing of LED optoelectronic devices, and particularly relates to a high-power LED plant growth lamp unit and a plant growth lamp.
Background
Artificial light sources for plant growth have been widely used in the cultivation of crops such as vegetables, fruits, flowers and the like in greenhouses. The artificial light sources can be used independently under the condition of no sunlight or used as supplementary lighting under the condition of insufficient sunlight, so that the normal growth of plants is facilitated. They can even be applied in special areas such as outer space crop cultivation for providing fresh fruits and vegetables for astronauts. Common artificial light sources include incandescent lamps, fluorescent lamps, high-pressure sodium lamps or mercury lamps and the like, but the spectral power distribution of the traditional plant growth light sources is fixed, the adjustable range of the luminous flux intensity is small and cannot be matched with the ideal light source conditions required by plant growth, and the requirements of different plants on the light sources at different growth stages are different, so that the waste of the light sources is caused. In addition, these artificial light sources are also inferior in terms of electrical-to-optical conversion efficiency, service life, and the like.
The 280-800 nm wave band range in the sunlight continuous spectrum has important significance for plant growth, the maximum energy proportion required by the plant growth is a blue light wave band (380-500 nm) and a red light wave band (600-800 nm), and the sunlight continuous spectrum is mainly used for photosynthesis and normal expression of main plant traits. Wherein, the wave band of 380-700 nm is a photosynthesis active radiation area which is the most main light source area for plant growth; the 700-800 nm far-red light wave band mainly influences the normal expression of plant characters, the demand of plant growth on the plant characters is relatively small, and the absorption specific gravity of the ultraviolet light wave band and the green light wave band is low, so that the influence of the ultraviolet light wave band and the green light wave band on the plant growth is limited.
Compared with the traditional plant growth light source, the LED light source has obvious advantages in many aspects, such as energy conservation, environmental protection, long service life, small volume, shock resistance, water and moisture resistance, low-voltage direct current driving, Pulse Width Modulation (PWM) output and the like, and is widely applied to the fields of LCD backlight sources, display screens, signal lamps, landscape lighting, common lighting and the like. The LED is a semiconductor solid with narrower spectrum and better monochromaticityThe full width at half maximum of the spectrum of the state light source is about 15-30 nm, and the peak wavelength of the spectrum covers all the range from ultraviolet light to near infrared light. The nitride Al at presentxInyGa1-x-yThe external quantum efficiency of the N (x is more than or equal to 0, y is less than or equal to 1, and x + y is less than or equal to 1) blue LED can reach more than 70%. And the luminous power of a single blue LED reaches more than 3W. According to the Haitz theorem, the LED industry will grow rapidly in the future with a 20% increase in optical power and a 10% decrease in price every 10 years. Therefore, the LED light source not only can overcome the defects of the traditional plant growth light source, but also has good market development potential.
The use of LEDs as light sources for plant growth has been reported in many foreign and chinese patents. For example, U.S. patent No. US6921182B2, efficientledlampforenhaingcommercilialandamplantgrowgrowthwowth, discloses a plant growth promoting lamp consisting of red and blue LEDs of two different beam angles and different peak wavelengths; also, for example, a Chinese patent "high-efficiency energy-saving LED plant ecological lamp" with publication number CN1596606A discloses a plant growth light source formed by blue LEDs or red LEDs or a combination of blue and red LEDs; chinese patent CN101387379A, an LED mixed light lamp for tissue culture of orchids, discloses an orchids growth light source adjustable by blue and red LEDs.
In the above-disclosed patent, the plant growth light source is manufactured by using one, two or more LED devices having different wavelengths, because the basic requirements for plant growth cannot be met by using one LED device having one wavelength, and the uniformity of light source mixing is poor when the plant growth light source is manufactured by using two or more LED devices having different wavelengths. Because different light sources irradiate the plane of the plant from different positions, the spectral composition and intensity of different positions of the plane are difficult to ensure to be consistent. In addition, the driving conditions of LED devices with different emission wavelengths are different, so that different driving circuits are required, which increases the complexity of the system and the development and manufacturing costs.
Nitride Red of Chinese patent publication No. CN103361054AA fluorescent powder synthesis method and an LED plant growth lamp disclose a technical scheme of a direct insertion type LED (also called as a straw hat lamp) plant growth lamp which is formed by combining a GaN-based low-power blue LED chip and nitride red fluorescent powder. Wherein, the nitride material component of the red fluorescent powder is rare earth doped Ca2Si5N8、Sr2Si5N8、Ba2Si5N8Or CaAlSiN3The emission wavelength is 610-720 nm. Although the scheme has the advantages of relatively simple circuit control and lower cost compared with the prior mode of combining the blue light LED with the red light LED, and the blue light and the red light are emitted from the same LED device in the scheme, the uniformity of the light source is well improved. However, the LED plant growth light source has smaller electric power of only 0.05W and smaller light power output. Therefore, for applications requiring a higher photosynthetically active photon flux density (PPFD), such as PPFD>200μmol/(m2S) or for large area, mass plant cultivation applications, the use of the above-mentioned low power in-line LED plant growth lamps would be greatly limited. Therefore, it is necessary to design a power amplifier with higher efficiency>1W) to overcome the deficiencies of the existing solutions.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a high-power LED plant growth lamp unit and a plant growth lamp.
The purpose of the invention is realized by the following technical scheme.
A high power LED plant growth light unit comprising: the LED module comprises a high-power blue LED chip, an optical lens, an ESD protection assembly, a red light conversion layer, a printed circuit and a heat dissipation substrate; the printed circuit penetrates through the heat dissipation substrate and covers the upper surface and the lower surface of the heat dissipation substrate, and the high-power blue light LED chip is arranged on the printed circuit or the heat dissipation substrate and connected with the printed circuit and used for realizing the conduction of the high-power blue light LED chip and the printed circuit; the red light conversion layer is arranged outside the high-power blue light LED chip in a conformal coating (conformal coating) mode or a hemispherical coating mode and is used for converting part of blue light emitted by the high-power LED chip into red light; an optical lens is coated outside the red light conversion layer; the optical lens is prepared from an encapsulation material; the ESD protection component is connected with the printed circuit and is connected with the high-power blue LED chips in parallel, wherein the number of the high-power blue LED chips is more than or equal to one.
In the above technical scheme, the red light conversion layer is in a hemispherical shape, and the red light conversion layer is coated outside the high-power blue light LED chip.
In the technical scheme, the hemispherical coating is formed by coating a hemispherical transparent light guide layer outside the high-power blue light LED chip and coating a red light conversion layer outside the transparent light guide layer, wherein the transparent light guide layer is prepared from a packaging material.
In the technical scheme, the type of the high-power blue light LED chip is a forward mounting, inverted mounting or vertical structure, and the peak wavelength range of the emission spectrum of the high-power blue light LED chip is 380-500 nm.
In the technical scheme, the red light conversion layer is prepared from a packaging material and red light fluorescent powder or red light quantum dots which are uniformly distributed in the packaging material; wherein the excitation wavelength range of the red light conversion layer is 380-500 nm; the peak wavelength range of the emission spectrum of the red light conversion layer is 600-800 nm.
In the above technical solution, the ESD protection component is a zener diode or a transient voltage suppression diode.
In the above technical solution, the heat dissipation substrate is made of aluminum nitride, boron nitride, aluminum oxide, epoxy molding compound, silicon carbide, diamond, silicon or graphite.
In the above technical solution, the encapsulating material is at least one of polycarbonate, acrylic, epoxy resin, silicone resin, and silicone epoxy resin.
A high power LED plant growth lamp comprising: the high-power LED plant growth lamp comprises a plurality of high-power LED plant growth lamp units and a PCB, wherein the PCB sequentially comprises a base plate, an insulating layer and a conducting circuit from bottom to top, and the conducting circuit is welded with the high-power LED plant growth lamp units.
In the technical scheme, a plurality of high-power LED plant growth lamp units are connected in parallel or in series; the PCB board is a strip-shaped PCB board, a rectangular PCB board or a disc-shaped PCB board, and the substrate is an aluminum substrate, an aluminum alloy substrate, a copper alloy substrate or a ferrochrome alloy substrate.
Compared with the prior art, the high-power LED plant growth lamp unit has the beneficial effects that:
1. the lens structure is adopted, so that the device has higher optical power output performance, outgoing rays of the device are concentrated, and higher optical power density output can be provided within a certain spatial range.
2. Because the red light conversion layer is arranged outside the high-power blue light LED chip, the mixing of the red light and the blue light is finished immediately from the surface of the red light conversion layer, and the spectral space distribution is uniform.
3. The circuit control is relatively simple, the cost is low, and the like, and the device is very suitable for large-area and large-quantity plant cultivation application.
4. The LED lamp has the advantages of universality, energy conservation, environmental protection, long service life and the like of the LED light source.
The high-power LED plant growth lamp based on the high-power LED plant growth lamp unit also has the beneficial effects.
Drawings
FIG. 1 is a schematic cross-sectional view of a red light conversion layer disposed outside a high-power blue LED chip in a conformal coating manner according to the present invention;
FIG. 2 is a schematic cross-sectional view of a red light conversion layer of the present invention disposed on the outside of the high-power blue light LED chip in the form of a hemispherical coating;
FIG. 3 is a schematic cross-sectional view of a red light conversion layer of the present invention disposed on the outside of the high-power blue LED chip in the form of a hemispherical coating;
FIG. 4 is a schematic top view of the high power LED plant growth lamp of the present invention;
FIG. 5 is a schematic cross-sectional view of a PCB board in the high power LED plant growth lamp of the present invention;
FIG. 6 is a schematic cross-sectional view of a high power LED plant growth lamp unit according to embodiment 1 of the present invention;
FIG. 7 is a schematic diagram of an equivalent circuit of a high power LED plant growth lamp unit in embodiment 1 of the present invention;
FIG. 8 is a schematic cross-sectional view of a high power LED plant growth lamp unit according to embodiment 2 of the present invention;
FIG. 9 is a schematic top view of a high power LED plant growth lamp unit according to embodiment 2 of the present invention;
FIG. 10 is a schematic cross-sectional view of a high power LED plant growth lamp unit according to embodiment 3 of the present invention;
FIG. 11 is a schematic top view of a high power LED plant growth lamp unit according to embodiment 3 of the present invention;
FIG. 12 is a schematic diagram of an equivalent circuit of a high power LED plant growth lamp unit in embodiment 3 of the present invention;
FIG. 13 is a schematic top view of a high power LED plant growth lamp device in embodiment 4 of the present invention;
the LED plant growth lamp comprises a high-power blue LED chip 1, a red light conversion layer 2, an optical lens 3, an ESD protection component 4, a printed circuit 5, a heat dissipation substrate 6, a bonding pad 7, a transparent light guide layer 8, a lead 9, a high-power LED plant growth lamp unit 10, a PCB 11, a conductive circuit 11-1, an insulating layer 11-2, a substrate 11-3 and a plant growth lamp 12.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
A high-power LED plant growth lamp unit comprises a high-power blue LED chip 1, a red light conversion layer 2, an optical lens 3, an ESD protection component 4, a printed circuit 5 and a heat dissipation substrate 6; the printed circuits 5 (printed circuit boards) are attached to the upper and lower surfaces of the heat dissipation substrate 6, and the printed circuits 5 on the upper and lower surfaces are connected and conducted with the printed circuits 5 through the through-hole structure on the heat dissipation substrate 6. The red light conversion layer 2 is arranged outside the high-power blue light LED chip 1 in a conformal coating mode or a hemispherical coating mode, and forms a main spectrum required by plant growth by converting part of blue light emitted by the high-power LED chip 1 into red light and matching the unconverted blue light; the optical lens 3 covers the outside of the red light conversion layer 2; the optical lens 3 is prepared from an encapsulation material; the high-power blue light LED chip 1 is arranged on the printed circuit 5 or the radiating substrate 6, and is connected with the printed circuit 5 through a lead, a bonding pad or a combination of the lead and the bonding pad, so as to realize the conduction of the high-power blue light LED chip 1. The ESD protection component 4 is connected with the printed circuit 5, the ESD protection component 4 is connected with the high-power blue-light LED chip 1 in parallel, and the ESD protection component 4 can be installed on one side of the high-power blue-light LED chip 1 or installed between the printed circuit 5 and the heat dissipation substrate 6;
fig. 1-3 show that the high-power blue-light LED chip 1 is mounted on the printed circuit 5, and is connected to the printed circuit 5 through the bonding pad 7 between the high-power blue-light LED chip 1 and the printed circuit 5, so as to realize the conduction of the high-power blue-light LED chip 1, and the bonding pad 7 is manufactured by the eutectic bonding technology. The ESD protection component 4 is connected with the printed circuit 5, and the ESD protection component 4 is connected with the high-power blue LED chip 1 in parallel.
In the technical scheme of the invention, the high-power blue light LED chip 1 is made of nitride AlxInyGa1-x-yN, wherein: x is more than or equal to 0, and y is less than or equal to 1; x + y is less than or equal to 1;
the nitride AlxInyGa1-x-yN is produced by growing by a Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) method.
The peak wavelength range of the emission spectrum of the high-power blue light LED chip 1 is 380-500 nm;
the high-power blue light LED chip 1 is of a forward mounting, inverted mounting or vertical structure, and the high-power blue light LED chips 1 in the figures 1-3 are schematic diagrams of inverted mounting structures.
The number of the high-power blue light LED chips 1 is one or more, and each of the high-power blue light LED chips 1 is shown in figures 1-3.
The excitation wavelength range of the red light conversion layer 2 is 380-500 nm, and the peak wavelength range of the emission spectrum of the red light conversion layer 2 is 600-800 nm.
The red light conversion layer 2 is prepared by uniformly dispersing red light fluorescent powder or red light quantum dots in a packaging material and curing. The packaging material is at least one of polycarbonate, acrylic acid, epoxy resin, organic silicon resin or organic silicon epoxy resin.
Wherein the component of the red fluorescent powder is M2SiO4:Eu2+(M is at least one of Ca, Sr and Ba), Li2MSiO4:Eu2+(M is at least one of Ca, Sr and Ba), MLiAl3N4:Eu2+(M is at least one of Ca, Sr and Ba), and MALSi4N7:Eu2+(M is at least one of Ca, Sr and Ba), MSiN2:Eu2+(M is at least one of Ca, Sr and Ba), MSiN2:Ce3+(M is at least one of Ca, Sr and Ba), and MAlSiN3:Eu2+(M is at least one of Ca, Sr and Ba), M2Si5N8:Eu2+(M is at least one of Ca, Sr and Ba), A2MF5:Mn4+(A is Li, Na, K, Rb, Cs, NH)4At least one of the elements; m is at least one of Al, Ga, In, Sc, Y and Gd elements), A3MF6:Mn4+(A is Li, Na, K, Rb, Cs, NH)4At least one of the elements; m is at least one of Al, Ga, In, Sc, Y and Gd elements) and Zn2MF7:Mn4+(M is at least one of Al, Ga, In, Sc, Y and Gd elements), AIn2F7:Mn4+(A is Li, Na, K, Rb, Cs, NH)4At least one of the elements), A2MF6:Mn4+(A is Li, Na, K, Rb, Cs, NH)4At least one of the elements; m is at least one of Si, Ge, Sn, Ti and Zr), and AMF6:Mn4+(A is at least one of Ca, Sr, Ba, Zn and Mg; M is at least one of Si, Ge, Sn, Ti and Zr), A3MF7:Mn4+(A is Li, Na, K, Rb, Cs, NH)4At least one of the elements; m is at least one of Ta, Nb and Zr); the red light quantum dots are at least one of CdSe and CdTe.
Because the technical route that the red light conversion layer 2 converts blue light into red light is adopted, one red light fluorescent powder or red light quantum dots can be selected as the red light conversion layer 2, and the spectrum of the red light conversion layer 2 can be set in a mode of mixing two or more red light fluorescent powders or red light quantum dots, so that the difference of different plants in different growth periods on light sources is met. The intensity ratio of blue light to red light can be controllably adjusted through the design of packaging parameters such as coating density, thickness and position of the red conversion layer. Meanwhile, the plant growth lamp only relates to the circuit driving of the blue light LED, so that the driving design and the maintenance method of the system are simplified, and the system cost is reduced.
The optical lens 3 is shaped as a hemisphere or an approximately hemisphere.
The ESD protection component 4 is a zener diode or a transient voltage suppression diode.
The heat dissipation substrate is made of aluminum nitride, boron nitride, aluminum oxide, Epoxy Molding Compound (EMC), silicon carbide, diamond, silicon or graphite.
The mode of the hemisphere coating comprises two structures: in the first structure, the red light conversion layer 2 is hemispherical and covers the outside of the high-power blue light LED chip; in the second structure, a hemispherical transparent light guide layer 8 is coated outside the high-power blue light LED chip, a red light conversion layer 2 is coated outside the transparent light guide layer 8, wherein the transparent light guide layer 8 is prepared from a packaging material. The packaging material is at least one of polycarbonate, acrylic acid, epoxy resin, organic silicon resin or organic silicon epoxy resin.
A high-power LED plant growth lamp is shown in figure 4 and comprises more than two high-power LED plant growth lamp units 10 and a PCB 11, wherein the high-power LED plant growth lamp units 10 are uniformly distributed on the PCB 11 through welding. The PCB 11 is provided with conductive circuits 11-1, and each high-power LED plant growth lamp unit 10 is connected in series or in parallel through the conductive circuit 11-1 on the PCB.
The PCB 11 can be a strip-shaped PCB, a rectangular PCB or a disc-shaped PCB; FIG. 4 is a schematic structural diagram of high-power LED plant growth lamp units uniformly distributed in a matrix array on a rectangular PCB.
As shown in fig. 5, the PCB board is composed of a substrate 11-3, an insulating layer 11-2 and a conductive trace 11-1, wherein the insulating layer 11-2 is located between the substrate 11-3 and the conductive trace 11-1;
the substrate 11-3 is an aluminum substrate, an aluminum alloy substrate, a copper alloy substrate or a ferrochrome alloy substrate.
The present invention will be further specifically described below with reference to specific examples.
Example 1
As shown in fig. 6, a high-power LED plant growth lamp unit includes a high-power blue LED chip 1, a red light conversion layer 2, an optical lens 3, an ESD protection component 4, a printed circuit 5, and a heat dissipation substrate 6; the printed circuits 5 are attached to the upper and lower surfaces of the heat dissipation substrate 6, and the printed circuits 5 on the upper and lower surfaces are connected and conducted through a perforated structure on the heat dissipation substrate 6; the red light conversion layer 2 is attached to the outside of the high-power blue light LED chip 1 in a conformal coating mode, and forms a main spectrum required by plant growth by converting part of blue light emitted by the high-power LED chip 1 into red light and matching the unconverted blue light; the optical lens 3 covers the high-power blue LED chip 1 and the red light conversion layer 2; the high-power blue light LED chip 1 is arranged on the printed circuit 5, is connected with the printed circuit 5 through a bonding pad 7 and a lead 9 and is used for conducting the high-power blue light LED chip 1; the ESD protection component 4 is connected with the printed circuit 5, and the ESD protection component 4 is connected with the high-power blue LED chip 1 in parallel. Wherein,
the high-power blue light LED chip 1 is made of nitride AlxInyGa1-x-yN, wherein: x is more than or equal to 0, and y is less than or equal to 1; x + y is less than or equal to 1;
the nitride AlxInyGa1-x-yThe N material is prepared by epitaxial growth by a Metal Organic Chemical Vapor Deposition (MOCVD) method.
The peak wavelength of the emission spectrum of the high-power blue light LED chip 1 is 430 nm;
the type of the high-power blue light LED chip 1 is a vertical structure, and the size is 1mm multiplied by 1 mm.
The number of the high-power blue light LED chips 1 is one.
The red light conversion layer 2 is made of red light fluorescent powder SrLiAl3N4:Eu2+Uniformly dispersing the epoxy resin in an epoxy resin material and curing to obtain the epoxy resin material; the red fluorescent powder SrLiAl3N4:Eu2+The material is prepared by a high-temperature solid-phase reaction method, and the excitation spectrum of the material reaches the highest quantum efficiency of more than 95% at the wavelength of 430nm by adjusting process parameters;
the emission peak wavelength of the red-light fluorescent powder is 660 nm;
the optical lens 3 is shaped like a hemisphere, and the encapsulating material used for the lens 3 is silicone resin.
The ESD protection component 4 is a transient voltage suppressor diode, and a corresponding equivalent circuit schematic diagram is shown in fig. 7.
In the embodiment, under the driving of the 1A direct-current power supply, the electric power of a single device of the high-power LED plant growth lamp unit can reach more than 3W, and PPFD can be generated>500μmol/(m2S) and a uniform spectral spatial distribution of the red and blue mixed light emitted from the surface of the red light conversion layer.
Example 2
As shown in fig. 8 (fig. 8 is a cross-sectional view of a transverse center line of fig. 9), a high-power LED plant growth lamp unit includes a high-power blue LED chip 1, a red light conversion layer 2, an optical lens 3, an ESD protection assembly 4, a printed circuit 5, and a heat dissipation substrate 6; the printed circuits 5 are attached to the upper and lower surfaces of the heat dissipation substrate 6, and the printed circuits 5 on the upper and lower surfaces are connected and conducted through a perforated structure on the heat dissipation substrate 6; the red light conversion layer 2 is attached to the outside of the high-power blue light LED chip 1 in a conformal coating mode, and forms a main spectrum required by plant growth by converting part of blue light emitted by the high-power LED chip 1 into red light and matching the unconverted blue light; the optical lens 3 covers the high-power blue LED chip 1 and the red light conversion layer 2; the high-power blue light LED chip 1 is arranged on the radiating substrate, is connected with the printed circuit 5 through a lead 9 and is used for conducting the high-power blue light LED chip; the ESD protection component 4 is a zener diode, the ESD protection component 4 is connected in parallel with the high-power blue LED chip 1, and is installed on one side of the high-power blue LED chip, specifically, the top view shown in fig. 9 is provided, and the red light conversion layer is not shown in fig. 9.
The high-power blue light LED chip 1 is made of nitride AlxInyGa1-x-yN, wherein: x is more than or equal to 0, and y is less than or equal to 1; x + y is less than or equal to 1;
the nitride AlxInyGa1-x-yThe N material is prepared by growing through a Molecular Beam Epitaxy (MBE) method.
The peak wavelength of the emission spectrum of the high-power blue light LED chip 1 is 450 nm;
the type of the high-power blue light LED chip 1 is of a normal mounting structure, and the size is 1mm multiplied by 1 mm.
The number of the high-power blue light LED chips 1 is one.
The red light conversion layer 2 is prepared by uniformly dispersing red light quantum dots CdSe with the size of 5.8nm in an organic silicon resin material and curing; the effective excitation wavelength of the red light quantum dots CdSe is 450nm, and the quantum efficiency is as high as more than 95%; the emission peak wavelength of the red light quantum dots is 620 nm;
the red light quantum dot CdSe is prepared by adopting a water phase synthesis method;
the optical lens 3 is shaped like a hemisphere, and the encapsulating material used by the lens 3 is silicone epoxy resin.
In the embodiment, the high-power LED plant growth lamp unit is driven by a 350mA direct-current power supply, the electric power of a single device can reach more than 1W, and PPFD can be generated>200μmol/(m2S) light radiation properties. The uniform red and blue mixed light is emitted from the surface of the red light conversion layer, and the spectral space distribution is uniform.
Example 3
As shown in fig. 10 (fig. 10 is a cross-sectional view of a transverse central line of any high-power blue LED chip in fig. 11), a high-power LED plant growth lamp unit includes 4 high-power blue LED chips 1, a red light conversion layer 2, an optical lens 3, an ESD protection component 4, a printed circuit 5, and a heat dissipation substrate 6; the printed circuits 5 are attached to the upper surface and the lower surface of the heat dissipation substrate 6, the printed circuits 5 on the upper surface and the lower surface are connected and conducted through a perforated structure on the heat dissipation substrate 6, the red light conversion layer 2 is attached to the outside of the high-power blue light LED chip 1 in a conformal coating mode, part of blue light emitted by the high-power LED chip 1 is converted into red light, and the red light is matched with unconverted blue light to form a main spectrum required by plant growth; the optical lens 3 covers the outside of the red light conversion layer 2 of the 4 high-power blue light LED chips 1; the high-power blue light LED chip 1 is arranged on the radiating substrate, is electrically connected with the printed circuit through a lead and is used for realizing the conduction of the high-power blue light LED chip. The ESD protection component 4 is a transient voltage suppressor diode, and the ESD protection component 4 is connected in parallel with the high-power blue LED chip 1 and attached on the printed circuit 5, on one side of the high-power blue LED chip, as shown in the top view of fig. 11 (the red light conversion layer 2 is not shown in the figure). An equivalent circuit diagram corresponding to the present embodiment is shown in fig. 12.
The high-power blue light LED chip 1 is made of nitride AlxInyGa1-x-yN, wherein: x is more than or equal to 0, and y is less than or equal to 1; x + y is less than or equal to 1;
the nitride AlxInyGa1-x-yThe N material is prepared by epitaxial growth by a Metal Organic Chemical Vapor Deposition (MOCVD) method.
The peak wavelength of the emission spectrum of the high-power blue light LED chip 1 is 450 nm;
the type of the high-power blue light LED chip 1 is of a normal mounting structure, and the size is 1mm multiplied by 1 mm.
The number of the high-power blue light LED chips 1 is 4, wherein two of the high-power blue light LED chips are connected in series and then connected in parallel.
The red light conversion layer 2 is made of red light fluorescent powder CaSrSiO4:Eu2+、K2NbF7:Mn4+And Ba2Si5N8:Eu2+The epoxy resin is prepared by mixing the components according to the weight ratio of 1:1:1 and uniformly dispersing the components in an epoxy resin material for curing;
wherein the red fluorescent powder CaSrSiO4:Eu2+And Ba2Si5N8:Eu2+Are all prepared by a high-temperature solid-phase reaction method; and red fluorescent powder K2NbF7:Mn4+The preparation method adopts a coprecipitation method. Further, the adjustment of the technological parameters enables the fluorescent powder CaSrSiO4:Eu2+、K2NbF7:Mn4+And Ba2Si5N8:Eu2+The excitation spectrum of (2) reaches the highest quantum efficiency at the wavelength of 450 nm;
the red fluorescent powder CaSrSiO4:Eu2+、K2NbF7:Mn4+And Ba2Si5N8:Eu2+The emission peak wavelengths of (a) are 620nm, 625nm and 650nm, respectively;
the optical lens 3 is shaped like a hemisphere, and the encapsulating material used by the lens 3 is silicone epoxy resin.
High-power LED in the embodimentUnder the drive of 700mA direct current power supply, the electric power of a single device of the plant growth lamp unit can reach more than 2W, and PPFD can be generated>800μmol/(m2S) light radiation properties. The uniform red and blue mixed light is emitted from the surface of the red light conversion layer, and the spectral space distribution is uniform.
Example 4
As shown in fig. 13, the high power LED plant growth lamp unit packaged according to example 1 is divided into three circles: the number of the high-power LED plant growth lamp units of each circle is 6, 12 and 16 respectively from inside to outside, and the high-power LED plant growth lamp units are arranged on the disc-shaped PCB to form the planar high-power LED plant growth lamp. Each high-power LED plant growth lamp unit can be connected in series through a conductive circuit on a PCB, the substrate material of the PCB is metal aluminum, and thermoelectric separation is realized through an insulating layer between the conductive circuit and the substrate material. When the direct current power supply is connected to the high-power LED plant growth lamp, the high-power LED plant growth lamp unit on the whole high-power LED plant growth lamp is lightened.
The planar high-power LED plant growth lamp can be combined together to form a plant growth lamp with a larger area, so that illumination is provided for more plants.
In the embodiment, under the driving of the 1A direct-current power supply, the electric power of a single device of the high-power LED plant growth lamp unit can reach more than 3W, and PPFD can be generated>5000μmol/(m2S) light radiation properties.
In order to avoid redundant description of a plurality of structural parameters and process conditions, the embodiment only exemplifies individual variation factors. Similar effects can be achieved by adjusting other structural or process variation factors, which are not listed here.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A high power LED plant growth lamp unit, comprising: the LED module comprises a high-power blue LED chip, an optical lens, an ESD protection assembly, a red light conversion layer, a printed circuit and a heat dissipation substrate; the printed circuit penetrates through the heat dissipation substrate and covers the upper surface and the lower surface of the heat dissipation substrate, and the high-power blue light LED chip is arranged on the printed circuit or the heat dissipation substrate and connected with the printed circuit and used for realizing the conduction of the high-power blue light LED chip and the printed circuit; the red light conversion layer is arranged outside the high-power blue light LED chip in a conformal coating mode or a hemispherical coating mode and is used for converting partial blue light emitted by the high-power LED chip into red light; an optical lens is coated outside the red light conversion layer; the optical lens is prepared from an encapsulation material; the ESD protection component is connected with the printed circuit and is connected with the high-power blue LED chips in parallel, wherein the number of the high-power blue LED chips is more than or equal to one.
2. The high power LED plant growth lamp unit of claim 1, wherein the hemispherical coating is such that the red light conversion layer is hemispherical and the red light conversion layer is coated outside the high power blue LED chip.
3. The high power LED plant growth lamp unit according to claim 1, wherein the hemispherical coating is formed by coating a hemispherical transparent light guide layer on the outside of the high power blue LED chip and a red light conversion layer on the outside of the transparent light guide layer, wherein the transparent light guide layer is made of a packaging material.
4. The high-power LED plant growth lamp unit according to claim 2 or 3, wherein the high-power blue LED chip is of a type of a forward mounting, a flip mounting or a vertical structure, and the peak wavelength range of the emission spectrum of the high-power blue LED chip is 380-500 nm.
5. The high power LED plant growth lamp unit according to claim 2 or 3, wherein the red light conversion layer is prepared from a packaging material and red fluorescent powder or red light quantum dots uniformly distributed in the packaging material; wherein the excitation wavelength range of the red light conversion layer is 380-500 nm; the peak wavelength range of the emission spectrum of the red light conversion layer is 600-800 nm.
6. The high power LED plant growth lamp unit according to claim 2 or 3, wherein the ESD protection component is a Zener diode or a transient voltage suppression diode.
7. The high power LED plant growth lamp unit according to claim 2 or 3, wherein the heat dissipation substrate is made of aluminum nitride, boron nitride, aluminum oxide, epoxy molding compound, silicon carbide, diamond, silicon or graphite.
8. The high power LED plant growth lamp unit of claim 2, 3 or 5, wherein the encapsulant is at least one of polycarbonate, acrylic, epoxy, silicone and silicone epoxy.
9. A high power LED plant growth lamp, comprising: the high-power LED plant growth lamp unit and the PCB as claimed in claim 1, wherein the PCB comprises a substrate, an insulating layer and a conducting circuit from bottom to top, and the high-power LED plant growth lamp unit is welded on the conducting circuit.
10. The use of the high power LED plant growth lamp unit according to claim 9, wherein a plurality of the high power LED plant growth lamp units are connected in parallel or in series; the PCB board is a strip-shaped PCB board, a rectangular PCB board or a disc-shaped PCB board, and the substrate is an aluminum substrate, an aluminum alloy substrate, a copper alloy substrate or a ferrochrome alloy substrate.
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