CN204348757U - Fluorescence switch plant growth lamp unit, plant growth lamp components and plant growth lamp - Google Patents
Fluorescence switch plant growth lamp unit, plant growth lamp components and plant growth lamp Download PDFInfo
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- CN204348757U CN204348757U CN201420785230.9U CN201420785230U CN204348757U CN 204348757 U CN204348757 U CN 204348757U CN 201420785230 U CN201420785230 U CN 201420785230U CN 204348757 U CN204348757 U CN 204348757U
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- 230000008635 plant growth Effects 0.000 title claims abstract description 60
- 238000006243 chemical reaction Methods 0.000 claims abstract description 90
- 150000004767 nitrides Chemical class 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 28
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000003822 epoxy resin Substances 0.000 abstract description 5
- 229920000647 polyepoxide Polymers 0.000 abstract description 5
- 230000003595 spectral effect Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 4
- 239000000741 silica gel Substances 0.000 abstract description 4
- 229910002027 silica gel Inorganic materials 0.000 abstract description 4
- 241000218202 Coptis Species 0.000 abstract description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 2
- 229920001169 thermoplastic Polymers 0.000 abstract description 2
- 239000004416 thermosoftening plastic Substances 0.000 abstract description 2
- 241001025261 Neoraja caerulea Species 0.000 abstract 2
- 239000004593 Epoxy Substances 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 239000004033 plastic Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
- 241000196324 Embryophyta Species 0.000 description 11
- 238000001228 spectrum Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 229920006336 epoxy molding compound Polymers 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000012010 growth Effects 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000029553 photosynthesis Effects 0.000 description 3
- 238000010672 photosynthesis Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical group 0.000 description 3
- WEJZHZJJXPXXMU-UHFFFAOYSA-N 2,4-dichloro-1-phenylbenzene Chemical compound ClC1=CC(Cl)=CC=C1C1=CC=CC=C1 WEJZHZJJXPXXMU-UHFFFAOYSA-N 0.000 description 2
- 241000233855 Orchidaceae Species 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 235000013311 vegetables Nutrition 0.000 description 2
- 206010021033 Hypomenorrhoea Diseases 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000004883 flower formation Effects 0.000 description 1
- 235000021022 fresh fruits Nutrition 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000005648 plant growth regulator Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007226 seed germination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model relates to a kind of fluorescence switch plant growth lamp unit, plant growth lamp components and plant growth lamp, comprise blue-ray LED flip-chip, ruddiness fluorescence conversion layer and transparent light guide layer, described ruddiness fluorescence conversion layer is coated on described blue-ray LED flip-chip, and described transparent light guide layer is coated on described ruddiness fluorescence conversion layer.Because this plant growth lamp employs the solder technology based on LED flip chip, achieve single-chip and multi-chip modules without gold thread, encapsulate without crystal-bonding adhesive, while guarantee product reliability, also have low thermal resistance, specular removal, the photochromic advantage such as to be evenly distributed.Red fluorescence transition material is dispersed in the encapsulating materials such as epoxy resin, epoxy molding plastic EMC, thermoplastic PCT, silica gel, by coated configuration mode, the some blue light of LED flip chip outgoing is converted to ruddiness, coordinates without the dominant spectral needed for the blue light composition plant growth of conversion.
Description
Technical Field
The utility model relates to a fluorescence conversion vegetation lamp unit, vegetation lamp device and vegetation lamp, in particular to fluorescence conversion vegetation lamp unit and vegetation lamp based on LED flip chip belongs to LED optoelectronic device's the manufacturing technical field.
Background
Artificial light sources for plant growth have been widely used in the cultivation of crops such as vegetables, fruits, flowers and the like in greenhouses. The artificial light sources can be used independently under the condition of no sunlight or used as supplementary lighting under the condition of insufficient sunlight, so that the normal growth of plants is facilitated. Their use even includes special areas such as outer space crop cultivation to provide fresh fruits and vegetables for astronauts. Common artificial light sources are incandescent lamps, fluorescent lamps, high-pressure sodium or mercury lamps, etc. However, the spectral power distribution of these conventional plant growth light sources is fixed, the adjustable range of the luminous flux intensity is small, and cannot match with the ideal light source conditions required by plant growth, and even different plants have different requirements for the light sources at different growth stages, which causes waste of the light sources. In addition, these artificial light sources are also inferior in terms of electrical-to-optical conversion efficiency, service life, and the like.
The 280-800 nm wave band range in the sunlight continuous spectrum has important significance for plant growth. The maximum specific gravity of energy required by plant growth is a blue light wave band (390-500 nm) and a red light wave band (600-800 nm), and the plant growth regulator is mainly used for photosynthesis and normal expression of main plant traits. Wherein, the wave band of 390-700 nm is a photosynthesis active radiation area which is the most main light source area for plant growth; the 700-800 nm far-red light wave band mainly influences the normal expression of plant characters, and the demand of plant growth on the plant characters is relatively small. And the absorption specific gravity of ultraviolet light and green light wave bands is very low, so that the influence of the ultraviolet light and the green light on the growth of plants is very limited.
On the other hand, the ratio of light sources in various wave bands can also influence plant growth. For example, the ratio of the number of photons of blue light to red light is decisive for photosynthesis; the ratio of the number of red light photons to the number of far-red light photons has influence on seed germination, seedling rooting, shade-avoiding reaction, flower formation induction and the like. The spectral composition and the power or power ratio of the compositions are expressed as the spectral power distribution of the light source.
In addition to the spectral power distribution, the intensity of the photon flux from the light source to the plant surface and the photoperiod (24 hour period) also have a significant effect on plant growth.
Compared with the traditional plant growth light source, the LED light source has obvious advantages in many aspects, such as energy conservation, environmental protection, long service life, small volume, shock resistance, water and moisture resistance, low-voltage direct current driving, Pulse Width Modulation (PWM) output and the like, and is widely applied to the fields of LCD backlight sources, display screens, signal lamps, landscape lighting, common lighting and the like. The LED is a semiconductor solid-state light source with narrow spectrum and good monochromaticity, the full width at half maximum of the spectrum is about 15-30 nm, and the peak wavelength of the spectrum covers all the range from ultraviolet light to near infrared light. The theoretical electro-optic conversion efficiency of the LED is 100 percent, and the nitride Al is adopted at presentxInyGa1-x-yThe external quantum efficiency of the N (x is more than or equal to 0, y is less than or equal to 1, and x + y is less than or equal to 1) blue LED can reach more than 70%. And the luminous power of a single blue LED reaches more than 3W. According to the Haitz theorem, the LED industry will grow rapidly in the future with a 20% increase in optical power and a 10% decrease in price every 10 years. Therefore, the LED light source not only can overcome the defects of the traditional plant growth light source, but also has good market development potential.
The use of LEDs as light sources for plant growth has been reported in many foreign and chinese patents. FOR example, US EFFICIENT LED LAMP FOR improving the efficiency of growing PLANTs AND HOME PLANT growing disclosed in US patent No. US6921182B2, which discloses a PLANT GROWTH promoting lamp composed of red LEDs AND blue LEDs of two different beam angles AND different peak wavelengths; also, for example, a Chinese patent "high-efficiency energy-saving LED plant ecological lamp" with publication number CN1596606A discloses a plant growth light source formed by blue LEDs or red LEDs or a combination of blue and red LEDs; chinese patent CN101387379A, an LED mixed light lamp for tissue culture of orchids, discloses an orchids growth light source adjustable by blue and red LEDs.
It can be seen that, in addition to the advantages of high energy efficiency, long life, etc. of the LED light source, the adoption of the LED solid-state light source can accurately control the photon flux intensity and the light period of the plant growth light source through an auxiliary driving controller or control system.
Chinese patent publication No. CN103361054A, nitride red phosphor synthesis method and LED plant growth lamp, discloses a technical scheme of combining a GaN-based blue LED forward-mounted chip and nitride red phosphor into a plant growth lamp. Wherein, the nitride material component of the red fluorescent powder is rare earth doped Ca2Si5N8、Sr2Si5N8、Ba2Si5N8Or CaAlSiN3The emission wavelength is 610-720 nm. However, AlxInyGa1-x-yN (0 is less than or equal to x, y is less than or equal to 1, and x + y is less than or equal to 1) blue LED forward chips have disadvantages in the aspects of current expansion, heat management and the like, and particularly for high-power LED devices, the disadvantages are more prominently shown.
In recent years, nitride LED chip technology using a flip-chip structure has been receiving increased attention and attention. The reason is that, on one hand, the flip chip structure overcomes the defects of the original normal chip structure in heat dissipation, current expansion, electrode light shielding and the like; on the other hand, after the processes of flip-chip technology, wafer bonding technology, surface mount technology and the like in the integrated circuit industry are used for reference, the technical route is gradually matured after absorption, accumulation and development for a certain time.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a fluorescence conversion vegetation lamp unit, vegetation lamp device and vegetation lamp that further improves the efficiency level of LED device, the reduce system cost is provided.
The utility model discloses an adopt single blue light LED flip chip and cladding to stimulate fluorescence conversion material to carry out the fluorescence conversion vegetation lamp unit of chip level packaging form (CSP) preparation.
The utility model provides an above-mentioned technical problem's technical scheme as follows: a fluorescence conversion plant growth lamp unit comprises a blue LED flip chip, a red fluorescence conversion layer and a transparent light guide layer, wherein the red fluorescence conversion layer is coated on the blue LED flip chip, and the transparent light guide layer is coated on the red fluorescence conversion layer; wherein,
the blue LED flip chip comprises a sapphire substrate, a nitride epitaxial layer, a p electrode and an n electrode, wherein the sapphire substrate is attached to the upper surface of the nitride epitaxial layer, and the p electrode and the n electrode are both positioned on the lower surface of the nitride epitaxial layer and are both connected with the lower surface of the nitride epitaxial layer; and the red light fluorescence conversion layer is coated on the other surfaces of the blue LED flip chip except the surface where the p electrode and the n electrode are positioned.
The utility model has the advantages that:
compared with the traditional illumination light source, the LED solid-state light source has the characteristics of energy conservation, environmental protection, long service life, convenient control of light power output power and the like, and also has better current expansion, heat management and energy conversion efficiency.
The nitride epitaxial layer is made of nitride AlxInyGa1-x-yN (x is more than or equal to 0, y is less than or equal to 1, and x + y is less than or equal to 1). And the peak wavelength range of the emission spectrum of the blue LED flip chip is 390-500 nm.
The red light fluorescence conversion layer is made by dispersing a red light fluorescence conversion material in an encapsulation material in a coating mode. The blue light LED flip chip is dispersed in packaging materials such as epoxy resin, epoxy molding compound EMC, thermoplastic resin PCT, silica gel and the like in a coating mode, part of blue light emitted by the blue light LED flip chip is converted into red light, and the red light is matched with the unconverted blue light to form a main spectrum required by plant growth.
The red light fluorescence conversion material comprises one or the mixture of more than two of rare earth or transition metal doped inorganic luminescent materials and quantum dot luminescent materials; for example, common red-emitting fluorescent rare earth or transition metal doped phosphors include: ca1-xSrxS:Eu2+(0≤x≤1)、Ca1-xSrxAlSiN3:Eu2+(0. ltoreq. x. ltoreq.1), and the like. The quantum dot light-emitting material includes: CdSe, CdZnSe, and the like.
The effective excitation wavelength range of the red light fluorescence conversion material is 390-500 nm, and the peak wavelength range of the emission spectrum of the red light fluorescence conversion material is 600-800 nm.
The utility model provides an another technical scheme as follows of above-mentioned technical problem:
the utility model provides a fluorescence conversion vegetation lamp device, includes foretell fluorescence conversion vegetation lamp unit and PCB board more than two, fluorescence conversion vegetation lamp unit is in through welding evenly distributed on the PCB board, be equipped with the conducting wire on the PCB board, each fluorescence conversion vegetation lamp unit passes through conducting wire on the PCB board switches on with series connection or parallel mode.
Further, the PCB board is a strip-shaped PCB board or a disc-shaped PCB board.
Further, the PCB board is composed of a substrate and an insulating layer, and the insulating layer is located between the substrate and the conducting circuit.
Further, the substrate is a metal aluminum substrate or a metal copper substrate.
The utility model provides an another technical scheme as follows of above-mentioned technical problem:
a fluorescence conversion plant growth lamp is composed of more than two fluorescence conversion plant growth lamp devices. That is, a plurality of devices are adopted to form various light source forms such as point, line, plane, three-dimensional and the like.
The utility model discloses vegetation lamp has used the welding technique based on LED flip chip, has realized single-chip and multi-chip module's no gold thread, has not had solid crystal glue encapsulation, when guaranteeing product reliability, still possess low thermal resistance, high light efficiency, photochromic distribution even, preparation process flow simplify, device system cost advantage such as lower.
The red fluorescence conversion material is dispersed in packaging materials such as epoxy resin, epoxy molding compound EMC, thermoplastic PCT, silica gel and the like, partial blue light emitted by the LED flip chip is converted into red light in a coating configuration mode, and the red light is matched with the unconverted blue light to form a main spectrum required by plant growth. Moreover, due to the adoption of the technical route of converting blue light into red light spectrum by the fluorescent conversion material, different red light fluorescent conversion materials can be selected, and the red light spectrum can be set in a mode of mixing one or more fluorescent conversion materials, so that the difference of the requirements of different plants on the light source in different growth periods can be met. The intensity ratio of the blue light to the red light can be controllably adjusted by designing the coating density (the mass proportion of the red fluorescent conversion material is 0.001-100), the thickness (0.001-10 mm), the position and other packaging parameters of the red fluorescent conversion material. The plant growth lamp only relates to a drive circuit of the blue LED, so that the drive design and maintenance method of the system are simplified, and the system cost is reduced.
Drawings
FIG. 1 is a schematic cross-sectional view of a fluorescence-converting plant growth lamp unit according to the present invention;
FIG. 2 is a schematic view of one of the fluorescent conversion plant growth lamp devices of the present invention;
FIG. 3 is a schematic view of one of the fluorescent conversion plant growth lamp devices of the present invention;
FIG. 4 is a schematic diagram of a PCB board of the fluorescence conversion plant growth lamp device of the present invention;
in the drawings, the components represented by the respective reference numerals are listed below:
1. the LED light source comprises a red light fluorescence conversion layer, 2, a transparent light guide layer, 3, a sapphire substrate, 4, a nitride epitaxial layer, 5, a p electrode, 6, an n electrode, 7, a PCB (printed circuit board), 7-1, a conducting circuit, 7-2, a base plate, 7-3 and an insulating layer.
Detailed Description
The principles and features of the present invention are described below in conjunction with the following drawings, the examples given are only intended to illustrate the present invention and are not intended to limit the scope of the present invention.
A fluorescence conversion plant growth lamp unit is shown in figure 1 and comprises a blue light LED flip chip, a red light fluorescence conversion layer 1 and a transparent light guide layer 2, wherein the red light fluorescence conversion layer 1 is coated on the blue light LED flip chip, and the transparent light guide layer 2 is coated on the red light fluorescence conversion layer 1; wherein,
the blue LED flip chip is composed of a sapphire substrate 3, a nitride epitaxial layer 4, a p electrode 5 and an n electrode 6, wherein the sapphire substrate 3 is attached to the upper surface of the nitride epitaxial layer 4, and the p electrode 5 and the n electrode 6 are both positioned on the lower surface of the nitride epitaxial layer 4 and are both connected with the lower surface of the nitride epitaxial layer 4; the red light fluorescence conversion layer 1 is coated on the other surfaces of the blue LED flip chip except the surfaces where the p electrode 5 and the n electrode 6 are positioned.
The nitride epitaxial layer 4 is made of nitride AlxInyGa1-x-yN (x is more than or equal to 0, y is less than or equal to 1, and x + y is less than or equal to 1). And the peak wavelength range of the emission spectrum of the blue LED flip chip is 390-500 nm.
The red light fluorescence conversion layer 1 is made by dispersing a red light fluorescence conversion material in an encapsulation material in a coating mode. The blue light LED flip chip is dispersed in packaging materials such as epoxy resin, epoxy molding compound EMC, thermoplastic resin PCT, silica gel and the like in a coating mode, part of blue light emitted by the blue light LED flip chip is converted into red light, and the red light is matched with the unconverted blue light to form a main spectrum required by plant growth.
The effective excitation wavelength range of the red light fluorescence conversion material is 390-500 nm, and the peak wavelength range of the emission spectrum of the red light fluorescence conversion material is 600-800 nm.
The utility model provides a fluorescence conversion vegetation lamp device, as shown in figure 2, figure 3, figure 4, includes foretell fluorescence conversion vegetation lamp unit and PCB board 7 more than two, fluorescence conversion vegetation lamp unit is in through welding evenly distributed on PCB board 7, be equipped with conducting wire 7-1 on the PCB board 7, each fluorescence conversion vegetation lamp unit passes through conducting wire 7-1 on the PCB board 7 switches on with series connection or parallel mode.
The PCB board 7 is a strip-shaped PCB board (as shown in fig. 2) or a disc-shaped PCB board (as shown in fig. 3).
As shown in fig. 4, the PCB 7 is composed of a substrate 7-2 and an insulating layer 7-3, and the insulating layer 7-3 is located between the substrate 7-2 and the conductive trace 7-1.
A fluorescence conversion plant growth lamp is composed of more than two fluorescence conversion plant growth lamp devices. That is, a plurality of devices are adopted to form various light source forms such as point, line, plane, three-dimensional and the like.
The present invention will be described in detail with reference to the following examples.
A single blue light LED flip chip and a coated fluorescence exciting conversion material are adopted to carry out Chip Scale Packaging (CSP) to manufacture the fluorescence conversion plant growth lamp unit. In fig. 1, a schematic cross-sectional structure of the fluorescence conversion plant growth lamp unit is shown: the periphery of the blue LED flip chip is coated by the red light fluorescence conversion layer 1, and the blue LED flip chip can be welded on the PCB 7 after being packaged.
Specifically, the blue LED flip chip is composed of a sapphire substrate 3 and nitride AlxInyGa1-x-yN (x is more than or equal to 0, y is less than or equal to 1, and x + y is less than or equal to 1), an epitaxial layer 4, a p electrode 5 and an N electrode 6. Wherein the active region In the nitride epitaxial layer 4 is composed of In0.2Ga0.8And N, the peak wavelength of the blue LED flip chip driven by 350mA forward current is 450 nm.
The coated excited red light fluorescence conversion material adopts Ca0.9Sr0.1AlSiN3:Eu2+(x is more than or equal to 0 and less than or equal to 1), and the fluorescent powder is mixed with epoxy resin A/B glue and then uniformly coated on the other planes except the plane where the electrode is positioned on the LED device, so that the transparent red light fluorescent conversion layer 1 is formed. On the periphery of the red light conversion layer 1, a transparent light guide layer 2 was formed using Polycarbonate (PC).
As shown in fig. 2 and 4, a plurality of encapsulated fluorescence conversion plant growth lamp units are arranged on a strip-shaped PCB to form a fluorescence conversion plant growth lamp device. Each fluorescence conversion plant growth lamp unit can be connected in series or in parallel through a conductive circuit on a PCB, the substrate material of the PCB is metal aluminum, and thermoelectric separation is realized through an insulating layer between the conductive circuit and the substrate material. When a direct current power supply is connected to the fluorescence conversion vegetation lamp device, the fluorescence conversion vegetation lamp unit on the whole device is lighted.
The fluorescence conversion plant growth lamp device can be combined with a plurality of strips when in use, for example, 10 plant growth lamp strips are used for forming a surface light source to provide illumination for plants in an illumination area.
As shown in fig. 3 and 4, 44 encapsulated fluorescence conversion plant growth lamp units are placed on a disc-shaped PCB in three circles (from inside to outside, the number of the fluorescence conversion plant growth lamp units in each circle is 6, 16 and 22, respectively) to form a planar fluorescence conversion plant growth lamp device. Each fluorescence conversion plant growth lamp unit can be connected in series or in parallel through a conductive circuit on a PCB, the substrate material of the PCB is metal aluminum, and thermoelectric separation is realized through an insulating layer between the conductive circuit and the substrate material. When a direct current power supply is connected to the fluorescence conversion vegetation lamp device, the fluorescence conversion vegetation lamp unit on the whole device is lighted.
The planar fluorescence conversion plant growth lamp device can be combined together to form a plant growth lamp with a larger area, so that illumination is provided for more plants.
In order to avoid redundant description of a plurality of structural parameters and process conditions, the embodiment only exemplifies individual variation factors. Similar effects can be achieved by adjusting other structural or process variation factors, which are not listed here.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Claims (6)
1. A fluorescence conversion vegetation lamp unit characterized in that: the LED flip chip comprises a blue LED flip chip, a red light fluorescence conversion layer and a transparent light guide layer, wherein the red light fluorescence conversion layer is coated on the blue LED flip chip, and the transparent light guide layer is coated on the red light fluorescence conversion layer; wherein,
the blue LED flip chip comprises a sapphire substrate, a nitride epitaxial layer, a p electrode and an n electrode, wherein the sapphire substrate is attached to the upper surface of the nitride epitaxial layer, and the p electrode and the n electrode are both positioned on the lower surface of the nitride epitaxial layer and are both connected with the lower surface of the nitride epitaxial layer; and the red light fluorescence conversion layer is coated on the other surfaces of the blue LED flip chip except the surface where the p electrode and the n electrode are positioned.
2. A fluorescence conversion plant growth lamp device, characterized in that: including the fluorescence conversion vegetation lamp unit of claim 1 more than two and PCB board, fluorescence conversion vegetation lamp unit is in through welding evenly distributed on the PCB board, be equipped with the conducting wire on the PCB board, each fluorescence conversion vegetation lamp unit passes through conducting wire on the PCB board is put through with series connection or parallel connection mode.
3. The fluorescence conversion plant growth light device of claim 2, wherein: the PCB board is a strip-shaped PCB board or a disc-shaped PCB board.
4. The fluorescence conversion plant growth light device of claim 2 or 3, wherein: the PCB board is composed of a substrate and an insulating layer, and the insulating layer is located between the substrate and the conducting circuit.
5. The fluorescence conversion plant growth light device of claim 4, wherein: the substrate is a metal aluminum substrate or a metal copper substrate.
6. A fluorescence conversion vegetation lamp characterized in that: the fluorescence conversion plant growth lamp is composed of more than two fluorescence conversion plant growth lamp devices of any one of claims 2 to 5.
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| CN107452851A (en) * | 2017-05-25 | 2017-12-08 | 凃中勇 | A kind of light emitting diode package assembly and multiple colour temperature lighting device |
| CN111048496A (en) * | 2018-10-12 | 2020-04-21 | 中国科学院半导体研究所 | Flip LED red light device structure and preparation method thereof |
| WO2020177359A1 (en) * | 2019-03-07 | 2020-09-10 | 杭州汉徽光电科技有限公司 | High voltage led chip set, led light source for plant light supplementation and illuminating device |
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2014
- 2014-12-11 CN CN201420785230.9U patent/CN204348757U/en not_active Expired - Fee Related
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| CN111048496A (en) * | 2018-10-12 | 2020-04-21 | 中国科学院半导体研究所 | Flip LED red light device structure and preparation method thereof |
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| WO2020177359A1 (en) * | 2019-03-07 | 2020-09-10 | 杭州汉徽光电科技有限公司 | High voltage led chip set, led light source for plant light supplementation and illuminating device |
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| US12051677B2 (en) | 2019-03-07 | 2024-07-30 | Hangzhou Hanhui Optoelectronic Technology Co., Ltd. | High voltage LED chip set, LED light source for plant light supplementation and illuminating device |
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