CN101717632A - Photosynthesis-spectrum simulating light-emitting material and solid light source of light-emitting diode packaged by same - Google Patents
Photosynthesis-spectrum simulating light-emitting material and solid light source of light-emitting diode packaged by same Download PDFInfo
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- CN101717632A CN101717632A CN200910228915A CN200910228915A CN101717632A CN 101717632 A CN101717632 A CN 101717632A CN 200910228915 A CN200910228915 A CN 200910228915A CN 200910228915 A CN200910228915 A CN 200910228915A CN 101717632 A CN101717632 A CN 101717632A
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Abstract
The invention relates to photosynthesis-spectrum simulating rear earth light-emitting material and solid light source of a semiconductor packaged by the same. The (Ca, Sr, Ba)3MgSi2O8:Eu, Mn or (Ca, Sr, Ba)2Si5N8:Eu light emitting material which is activated by rear earth ions and the single GaN-base semiconductor chip are combined, packaged and assembled into an illuminating device to simulate the photosynthesis spectrum, wherein the single GaN-base semiconductor chip has the emitting wavelength of 350-400 nm or 450-460 nm. The light-emitting material has good photosynthesis-spectrum simulating effect; the energy of photons of both blue light and the red light which are emitted by the light-emitting material are distributed uniformly in the space; the solid light source of the semiconductor packaged by the light-emitting material has reasonable structure, simple processing process and low manufacturing cost; the solid light source of the semiconductor consumes less power, causes no pollution to the environment and has long service life and wide application prospect.
Description
[technical field]
The invention belongs to technical field of semiconductor illumination, particularly relate to a kind of luminescent material and photodiode solid state light emitter thereof of mimic photosynthesis action spectrum.
[background technology]
The needed luminous energy of plant-growth photosynthesis is mostly at blue light, ruddiness and part near-ultraviolet light and far-red light wave band.In the artificial light filling technology of plant-growth, adopt high voltage mercury lamp the earliest, adopt three-color fluorescent lamp afterwards, all have shortcomings such as power consumption height, life-span weak point and contaminate environment, and the action spectrum of emmission spectrum wave band and photosynthesis of plant does not also match, and causes the waste of additional electrical energy and luminous energy thereof.With the photodiode is the solid-state illumination light source of representative, has the advantage of energy-saving and environmental protection and long life, becomes the needed source of artificial light substitute of plant-growth.These light sources adopt the diode of independent emission blue light and the diode of red-emitting usually, are assembled into light emitting array.There is following shortcoming in this photosynthesis light source that loads in mixture pattern: the spectrum of ruddiness and blue light and plant-growth spectrum accurately do not mate; The flux ratio of blue light and ruddiness will adopt the number of diodes of different quantities to adjust; Because die size, the drive current of blue light and red diodes are different, adopt different driving circuits could realize different separately luminous efficiencies; Blue light and red photons spatially energy distribution are also inhomogeneous.
[summary of the invention]
The objective of the invention is at above-mentioned existing problems, a kind of luminescent material and photodiode solid state light emitter thereof of mimic photosynthesis action spectrum are provided, and spatially energy distribution is even for the effective and blue light of this luminescent material mimic photosynthesis action spectrum and red photons; Semi-conductor solid-state light source by this luminescent material preparation is rational in infrastructure, preparation technology simple, low cost of manufacture; Use that this semiconductor solid-state light power consumption is low, the life-span is long and nonpollution environment.
Technical scheme of the present invention:
A kind of luminescent material of mimic photosynthesis action spectrum is rare-earth ion activated silicate luminescent material or nitride luminescent material.
The chemical formula of described rare-earth ion activated silicate luminescent material is Ba
3MgSi
2O
8: Eu, Mn.
The chemical formula of described rare-earth ion activated nitride luminescent material is Sr
2Si
5N
8: Eu.
The described rare-earth ion activated silicate luminescent material or the granular size scope of nitride luminescent material are 3-10 micron, adulterated Eu, and the Mn ion is divalence.
A kind of photodiode solid state light emitter that adopts the luminescent material of described mimic photosynthesis action spectrum adopts the encapsulation array mode to make by rare-earth ion activated silicate luminescent material or nitride luminescent material and single GaN base semiconductor chip.
Described rare-earth ion activated luminescent material is Ba
3MgSi
2O
8: Eu, Mn, the dominant wavelength ranges of single GaN base semiconductor chip is 350 nanometers-400 nanometers, under the near-ultraviolet light irradiation that this chip sends, Ba
3MgSi
2O
8: Eu, Mn luminescent material send the blue light of 440-460 nanometer and the ruddiness of 600-650 nanometer simultaneously.
Described rare-earth ion activated luminescent material is Sr
2Si
5N
8: Eu, the dominant wavelength ranges of single GaN base semiconductor chip is 420 nanometer to 460 nanometers, under the blue light irradiation that this chip sends, Sr
2Si
5N
8: the Eu luminescent material sends the ruddiness that predominant wavelength is 660 nanometers.
Described encapsulation array mode is that predominant wavelength is the single GaN base chip and the Ba of 350 nanometers-400 nanometer
3MgSi
2O
8: Eu, the combination of Mn luminescent material, predominant wavelength is the single GaN base chip and the Sr of 420 nanometer to 460 nanometers
2Si
5N
8: the Eu luminescent material cooperates, and is packaged into small power or large-power light-emitting diodes according to existing technology.
Advantage of the present invention is: spatially energy distribution is even for the effective and blue light of this luminescent material mimic photosynthesis action spectrum and the photon of ruddiness; Photodiode solid state light emitter by this luminescent material encapsulation is rational in infrastructure, complete processing simple, low cost of manufacture; Use that this semi-conductor solid-state light source power consumption is low, the life-span is long and nonpollution environment, have broad application prospects.
[description of drawings]
Fig. 1 is a kind of encapsulating structure synoptic diagram that adopts the photodiode solid state light emitter of this luminescent material.
Fig. 2 is after adopting this rare-earth ion activated luminescent material and the combination of single GaN semi-conductor chip, simulating plant growth spectrographic effect.
Among the figure: 1. reflector 2.GaN semi-conductor chip 3. luminescent materials
4. ruddiness 5. blue lights 6. transparent silica gel
[embodiment]
Further specify the concrete structure and the principle of the diode light-source of while red-emitting and blue light below in conjunction with the accompanying drawing example.
Embodiment 1:
As shown in Figure 1, the small power encapsulation mode of having showed the diode light-source of a kind of while red-emitting 4 and blue light 5, select the single GaN semi-conductor chip 2 of emission near-ultraviolet light to be fixed in the reflector 1, radiative predominant wavelength is 380 nanometers, and the coating size is 3 microns Ba
3MgSi
2O
8: Eu, Mn luminescent material 3, adulterated Eu, the Mn ion is divalence; Use transparent silica gel 6 packagings then.This near ultraviolet excitation Ba
3MgSi
2O
8: Eu, Mn luminescent material 3 is launched ruddiness 4 and blue light 5 simultaneously, and the needed ruddiness of photosynthesis of plant and two wave bands of blue light are formed in 440 nanometers and 625 nanometers in the predominant wavelength position.As shown in Figure 2, the emmission spectrum of the two light-emitting diode light sources of this ruddiness and blue light under rated current drives, wherein dotted line is represented the absorption spectrum of photosynthesis of plant.
This example does not limit other encapsulation modes of ruddiness and blue light-emitting diode light source, such as Piranha, surface mount and small power, high-power isotype just for realization principle of the present invention is described.
Embodiment 2:
In small power encapsulating structure as Fig. 1, select single blue light GaN semi-conductor chip 2 to be fixed in the reflector 1, blue light 5 predominant wavelengths are 460 nanometers, and the coating size is 10 microns Sr
2Si
5N
8: Eu luminescent material 3, adulterated Eu, the Mn ion is divalence; Use transparent silica gel 6 packagings then.This blue light 5 excites Sr
2Si
5N
8: Eu luminescent material 3 sends ruddiness 4, and the predominant wavelength of ruddiness 4 is 643 nanometers, with the unabsorbed blue light that transmits 5 of part, forms the needed ruddiness 4 of photosynthesis of plant and 5 two wave bands of blue light.Similar with embodiment 1 Simulation result, in this ruddiness and the emmission spectrum of the two light-emitting diode light sources of blue light under rated current drives of accompanying drawing 2, the predominant wavelength of the blue light that sends is in 460 nanometers, and the predominant wavelength of ruddiness is in 643 nanometers.Dotted line still can be represented the absorption spectrum of photosynthesis of plant.This example does not limit other encapsulation modes of ruddiness and blue light-emitting diode light source, such as Piranha, surface mount and small power, high-power isotype just for realization principle of the present invention is described.
Claims (8)
1. the luminescent material of a mimic photosynthesis action spectrum is characterized in that: be rare-earth ion activated silicate luminescent material or nitride luminescent material.
2. according to the luminescent material of the described mimic photosynthesis action spectrum of claim 1, it is characterized in that: the chemical formula of described rare-earth ion activated silicate luminescent material is Ba
3MgSi
2O
8: Eu, Mn.
3. according to the luminescent material of the described mimic photosynthesis action spectrum of claim 1, it is characterized in that: the chemical formula of described rare-earth ion activated nitride luminescent material is Sr
2Si
5N
8: Eu.
4. according to the luminescent material of claim 1,2 or 3 described mimic photosynthesis action spectrums, it is characterized in that: the described rare-earth ion activated silicate luminescent material or the granular size scope of nitride luminescent material are 3 microns-10 microns, adulterated Eu, and the Mn ion is divalence.
5. photodiode solid state light emitter that adopts the luminescent material of described mimic photosynthesis action spectrum is characterized in that: adopted by rare-earth ion activated silicate luminescent material or nitride luminescent material and single GaN base semiconductor chip to encapsulate array mode and make.
6. according to the described photodiode solid state light emitter of claim 5, it is characterized in that: described rare-earth ion activated luminescent material is Ba
3MgSi
2O
8: Eu, Mn, the dominant wavelength ranges of single GaN base semiconductor chip is 350 nanometers～400 nanometers, under the photoirradiation that this chip sends, Ba
3MgSi
2O
8: Eu, Mn luminescent material send the blue light of 440 nanometers～460 nanometers and the ruddiness of 600 nanometers～650 nanometers simultaneously.
7. according to the described photodiode solid state light emitter of claim 5, it is characterized in that: described rare-earth ion activated luminescent material is Sr
2Si
5N
8: Eu, the dominant wavelength ranges of single GaN base semiconductor chip is 420 nanometers～460 nanometers, under the photoirradiation that this chip sends, Sr
2Si
5N
8: the Eu luminescent material sends the ruddiness that predominant wavelength is 660 nanometers.
8. according to the described photodiode solid state light emitter of claim 5, it is characterized in that: described encapsulation array mode is that predominant wavelength is the single GaN base chip and the Ba of 350 nanometers～400 nanometers
3MgSi
2O
8: Eu, the combination of Mn luminescent material, predominant wavelength is the single GaN base chip and the Sr of 420 nanometers～460 nanometers
2Si
5N
8: the Eu luminescent material cooperates, and is packaged into photodiode according to existing technology.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910228915A CN101717632A (en) | 2009-12-02 | 2009-12-02 | Photosynthesis-spectrum simulating light-emitting material and solid light source of light-emitting diode packaged by same |
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|---|---|---|---|
| CN200910228915A CN101717632A (en) | 2009-12-02 | 2009-12-02 | Photosynthesis-spectrum simulating light-emitting material and solid light source of light-emitting diode packaged by same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361054A (en) * | 2012-04-05 | 2013-10-23 | 东莞长发光电科技有限公司 | Synthesis method of red nitride fluorescent powder and LED (light-emitting diode) plant growth lamp |
| CN103615677A (en) * | 2013-12-12 | 2014-03-05 | 天津理工大学 | LED synchronous red-blue light panel light source used for promoting plant growth |
| CN104465963A (en) * | 2010-11-25 | 2015-03-25 | 夏普株式会社 | Light emitting device, LED light source for plant cultivation, and plant factory |
| CN110896086A (en) * | 2018-09-13 | 2020-03-20 | 群创光电股份有限公司 | Electronic device |
-
2009
- 2009-12-02 CN CN200910228915A patent/CN101717632A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465963A (en) * | 2010-11-25 | 2015-03-25 | 夏普株式会社 | Light emitting device, LED light source for plant cultivation, and plant factory |
| US9666769B2 (en) | 2010-11-25 | 2017-05-30 | Sharp Kabushiki Kaisha | Light emitting device, LED light source for plant cultivation, and plant factory |
| CN104465963B (en) * | 2010-11-25 | 2017-10-24 | 夏普株式会社 | Light-emitting device, LED light source for plant cultivation and plant factor |
| CN103361054A (en) * | 2012-04-05 | 2013-10-23 | 东莞长发光电科技有限公司 | Synthesis method of red nitride fluorescent powder and LED (light-emitting diode) plant growth lamp |
| CN103615677A (en) * | 2013-12-12 | 2014-03-05 | 天津理工大学 | LED synchronous red-blue light panel light source used for promoting plant growth |
| CN110896086A (en) * | 2018-09-13 | 2020-03-20 | 群创光电股份有限公司 | Electronic device |
| CN110896086B (en) * | 2018-09-13 | 2022-02-11 | 群创光电股份有限公司 | Electronic device |
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Application publication date: 20100602 |