CN203812904U - Near-ultraviolet light-emitting diode for promoting plant growth - Google Patents
Near-ultraviolet light-emitting diode for promoting plant growth Download PDFInfo
- Publication number
- CN203812904U CN203812904U CN201320771642.2U CN201320771642U CN203812904U CN 203812904 U CN203812904 U CN 203812904U CN 201320771642 U CN201320771642 U CN 201320771642U CN 203812904 U CN203812904 U CN 203812904U
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- China
- Prior art keywords
- emitting diode
- ultraviolet light
- fluorescent powder
- near ultraviolet
- plant growth
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- Luminescent Compositions (AREA)
Abstract
The utility model provides a near-ultraviolet light-emitting diode for promoting plant growth, and the light-emitting diode comprises a pedestal, a near-ultraviolet light-emitting diode chip, an internal packaging layer, and an external packaging layer. The bottom of the near-ultraviolet light-emitting diode chip is installed on the pedestal. The near-ultraviolet light-emitting diode chip is covered by the internal packaging layer which is covered by the external packaging layer. The light-emitting diode provided by the utility model finally enables the emitting to be uniform and soft, and improves the growth efficiency of a plant.
Description
Technical field
The utility model relates to LED technology field, particularly relates to a kind of Promoting plant growth near ultraviolet light-emitting diode.
Background technology
In recent years, artificial light source has been applied in the middle of plant cultivation more and more widely.Research discovery, the blue light of 400-520 nm makes chlorophyll and carotenoid assimilation ratio maximum, and the ruddiness of 610-720 nm is maximum to the contribution of photosynthesis of plant.Particularly wave-length coverage is the blue light of 440-460 nm and the ruddiness of 620-680 nm, is the wave band that makes photosynthetic efficiency maximum.
At present, incandescent lamp, fluorescent lamp, high-pressure sodium lamp are that commonly use several cultivate artificial light source for plant, yet they all have certain imperfection part, so application is subject to the restriction of some.Specifically, the luminous efficiency of incandescent lamp is not high, while irradiating plant, can produce amount of heat, the plant of easily burning.Fluorescent lamp is comparatively energy-conservation compared with incandescent lamp, but the life-span is short, and the material of its use also can pollute environment, and in addition, it and incandescent lamp are not planar light sources, has the inhomogeneous problem of irradiating.Although the exposure intensity of high-pressure sodium lamp is large, irradiated area is wide, and power consumption is large, the life-span is short, caloric value is large, has also restricted its application in plant cultivation field.
Light-emitting diode (Light Emitting Diode, LED) has the characteristics such as volume is little, the life-span is long, driving voltage is low, reaction speed is fast, shatter-proof, heat-resisting, thereby has obtained increasing concern in plant is cultivated.In order to make plant can obtain blue light and red light simultaneously, adopted the method for mixing a plurality of red LED and blue led in the past, but because the efficiency of red LED and blue led is different, obtain the illumination of specific proportion of red blue light, a blue led will be equipped with to a plurality of red LED around, so just cause the inhomogeneous situation of colour mixture, be unfavorable for farthest improving the efficiency of photosynthesis of plant.
In order to overcome the deficiencies in the prior art, need a kind of Promoting plant growth near ultraviolet light-emitting diode of utility model.
Summary of the invention
The technical problems to be solved in the utility model be to provide a kind of Promoting plant growth with near ultraviolet light-emitting diode and, it is had and makes the luminous evenly soft of diode, improved the growth efficiency of plant, thereby overcome the deficiencies in the prior art.
For solving the problems of the technologies described above, a kind of Promoting plant growth of the utility model near ultraviolet light-emitting diode, comprise base, near ultraviolet light-emitting diode chip for backlight unit, interior encapsulated layer and outer package layer, the bottom of described near ultraviolet light-emitting diode chip for backlight unit is arranged on base, on described near ultraviolet light-emitting diode chip for backlight unit, be coated with interior encapsulated layer, on described interior encapsulated layer, be coated with outer package layer;
In described interior encapsulated layer, be mixed with rareearth blue fluorescent powder, in described outer package layer, be mixed with rare earth red fluorescent powder.
Further, described rareearth blue fluorescent powder be emission peak be 440-460 nm chlorophosphate, aluminate or Nitride phosphor in the composition of one or more materials;
Described rareearth blue fluorescent powder is chlorophosphate blue colour fluorescent powder [Ca
5(PO
4)
3cl/Eu].
Described rare earth red fluorescent powder is that emission peak is the nitride of 620-680 nm or the composition of one or both materials in sulphide fluorescent material;
Described rare earth red fluorescent powder is nitride red fluorescent powder [Sr
2si
5n
8/ Eu].
Adopt after above design, the utility model has following beneficial effect compared with the prior art:
Near ultraviolet light-emitting diode of the present utility model adopts double-deck encapsulation technology, rareearth blue fluorescent powder is mixed in interior encapsulated layer, rare earth red fluorescent powder is mixed in outer package layer, when acquisition is conducive to the optical band of photosynthesis of plant, effectively solved the problem of the non-uniform light that light-emitting diode runs into when for plant growth, can be widely used in the aspects such as botanical seedling culturing, leaf vegetables cultivation, the production of flowers and plants, finally make the luminous evenly soft of diode, improved the growth efficiency of plant.
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
Accompanying drawing explanation
Above-mentioned is only the general introduction of technical solutions of the utility model, and in order to better understand the utility model, below in conjunction with accompanying drawing and embodiment, the utility model is described in further detail.
Fig. 1 is the structural representation of near ultraviolet light-emitting diode for a kind of Promoting plant growth of the present utility model.
Fig. 2 is the spectrogram of near ultraviolet light-emitting diode of the Promoting plant growth of the utility model figure.
Embodiment
Refer to shown in Fig. 1, a kind of Promoting plant growth of the utility model near ultraviolet light-emitting diode, comprise base 1, near ultraviolet light-emitting diode chip for backlight unit 2, interior encapsulated layer 3 and outer package layer 4, near ultraviolet light-emitting diodes tube core, 2 bottom is arranged on base 1, on near ultraviolet light-emitting diode chip for backlight unit, be coated with interior encapsulated layer 3, on interior encapsulated layer 3, be coated with outer package layer 4; In 3 layers of interior encapsulation, be mixed with rareearth blue fluorescent powder, in outer package layer 4, be mixed with rare earth red fluorescent powder.The support that base 1 is light-emitting diode, it has good chemical stability and thermal stability, good conductivity and thermal conductivity.Interior encapsulated layer 3 and outer package layer 4 have higher light transmission, have good stability under varying environment.Near ultraviolet light-emitting diode chip for backlight unit 2 of the present utility model, as the luminous light source of excitated fluorescent powder, has good luminous power and emission wavelength and has good coupling with fluorescent material.
Wherein, refer to shown in Fig. 2 the spectrogram of the near ultraviolet light-emitting diode of Promoting plant growth.Rareearth blue fluorescent powder be emission peak be 440-460 nm chlorophosphate, aluminate or Nitride phosphor in the composition of one or more materials; Rareearth blue fluorescent powder is chlorophosphate blue colour fluorescent powder [Ca
5(PO
4)
3cl/Eu].Rare earth red fluorescent powder is that emission peak is the nitride of 620-680 nm or the composition of one or both materials in sulphide fluorescent material; Rare earth red fluorescent powder is nitride red fluorescent powder [Sr
2si5N
8/ Eu].
Promoting plant growth is by near ultraviolet excitation and luminous fluorescent material with the fluorescent material near ultraviolet light-emitting diode.The rareearth blue fluorescent powder that it adopts is that emission peak is the chlorophosphate [(Sr, Ca, Ba, Mg) of 440-460 nm
10(PO
4)
6cl
2/ Eu], aluminate [(Ba, Sr) MgAl
10o
17/ Eu] or Nitride phosphor one or more combination, rare earth red fluorescent powder is that emission peak is the nitride [(Ca, Sr) of 620-680 nm
2si
5n
8/ Eu, (Ca, Sr) AlSiN
3/ Eu] or sulfide [(Sr, Ca) S/Eu, La
2o
2s/Eu] one or both combinations of fluorescent material.Promoting plant growth is 1-2 by the rareearth blue fluorescent powder of near ultraviolet light-emitting diode and the mol ratio of rare earth red fluorescent powder.Near ultraviolet light-emitting diode makes the luminous energy Promoting plant growth sending, and evenly soft, improves to the full extent the efficiency of plant growth.
In addition, the preparation method of light-emitting diode of the present utility model comprises the following steps:
1, select near ultraviolet light-emitting diode chip for backlight unit, the effective excitated fluorescent powder of luminous energy that light-emitting diode chip for backlight unit is sent;
2, select suitable crystal-bonding adhesive that light-emitting diode chip for backlight unit is bonded on base;
3, extraction electrode near ultraviolet light-emitting diode chip for backlight unit;
4, near ultraviolet light-emitting diode chip for backlight unit upper surface, apply and be mixed with the packaging plastic that emission peak is the rareearth blue fluorescent powder of 440-460 nm, encapsulated layer in forming;
5, the encapsulated layer upper surface obtaining in step 4 applies and is mixed with the packaging plastic that emission peak is the rare earth red fluorescent powder of 620-680 nm, forms outer package layer;
6, every photoelectric properties and the parameter of test component.
Embodiment 1
The utility model Promoting plant growth adopts near ultraviolet light-emitting diode chip for backlight unit 2 as exciting light with near ultraviolet light-emitting diode, is mixed with chlorophosphate blue colour fluorescent powder [Ca in interior encapsulated layer 3
5(PO
4)
3cl/Eu], in outer package layer 4, be mixed with nitride red fluorescent powder [Sr
2si
5n
8/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 1:1.
Embodiment 2
The utility model Promoting plant growth adopts near ultraviolet light-emitting diode chip for backlight unit 2 as exciting light with near ultraviolet light-emitting diode, is mixed with chlorophosphate blue colour fluorescent powder [Ca in interior encapsulated layer 3
5(PO
4)
3cl/Eu], in outer package layer 4, be mixed with nitride red fluorescent powder [CaAlSiN
3/ Eu], the mol ratio of blue colour fluorescent powder and red fluorescence powder is 1.3:1.
Embodiment 3
The utility model Promoting plant growth adopts near ultraviolet light-emitting diode chip for backlight unit 2 as exciting light with near ultraviolet light-emitting diode, is mixed with chlorophosphate blue colour fluorescent powder [Ba in interior encapsulated layer 3
5(PO
4)
3cl/Eu], in outer package layer 4, be mixed with nitride red fluorescent powder [SrAlSiN
3/ Eu], the mol ratio of blue colour fluorescent powder and red fluorescence powder is 1.4:1.
Embodiment 4
The utility model Promoting plant growth adopts near ultraviolet light-emitting diode chip for backlight unit 2 as exciting light with near ultraviolet light-emitting diode, in interior encapsulated layer 3, is mixed with aluminate blue fluorescent powder [BaMgAl
10o
17/ Eu], in outer package layer 4, be mixed with nitride red fluorescent powder [Ca
2si
5n
8/ Eu], the mol ratio of blue colour fluorescent powder and red fluorescence powder is 1.5:1.
Embodiment 5
The utility model Promoting plant growth adopts near ultraviolet light-emitting diode chip for backlight unit 2 as exciting light with near ultraviolet light-emitting diode, in interior encapsulated layer 3, is mixed with aluminate blue fluorescent powder [SrMgAl
10o
17/ Eu], in outer package layer 4, be mixed with sulfide red fluorescent material [CaS/Eu], the mol ratio of blue colour fluorescent powder and red fluorescence powder is 1.8:1.
Embodiment 6
Light emitting diode construction as shown in Figure 1, adopts near ultraviolet light-emitting diode chip for backlight unit 2 as exciting light, in interior encapsulated layer 3, is mixed with aluminate blue fluorescent powder [SrMgAl
10o
17/ Eu], in outer package layer 4, be mixed with sulfide red fluorescent material [La
2o
2s/Eu], the mol ratio of blue colour fluorescent powder and red fluorescence powder is 2:1.
The above; it is only preferred embodiment of the present utility model; not the utility model is done to any pro forma restriction, those skilled in the art utilize the technology contents of above-mentioned announcement to make a little simple modification, equivalent variations or modification, all drop in protection range of the present utility model.
Claims (3)
1. a Promoting plant growth near ultraviolet light-emitting diode, it is characterized in that comprising base, near ultraviolet light-emitting diode chip for backlight unit, interior encapsulated layer and outer package layer, the bottom of described near ultraviolet light-emitting diode chip for backlight unit is arranged on base, on described near ultraviolet light-emitting diode chip for backlight unit, be coated with interior encapsulated layer, on described interior encapsulated layer, be coated with outer package layer;
In described interior encapsulated layer, be mixed with rareearth blue fluorescent powder, in described outer package layer, be mixed with rare earth red fluorescent powder.
2. a kind of Promoting plant growth near ultraviolet light-emitting diode according to claim 1, is characterized in that:
Described rareearth blue fluorescent powder is chlorophosphate blue colour fluorescent powder [Ca
5(PO
4)
3cl/Eu].
3. a kind of Promoting plant growth near ultraviolet light-emitting diode according to claim 1, is characterized in that:
Described rare earth red fluorescent powder is nitride red fluorescent powder [Sr
2si
5n
8/ Eu].
Priority Applications (1)
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CN201320771642.2U CN203812904U (en) | 2013-11-30 | 2013-11-30 | Near-ultraviolet light-emitting diode for promoting plant growth |
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CN201320771642.2U CN203812904U (en) | 2013-11-30 | 2013-11-30 | Near-ultraviolet light-emitting diode for promoting plant growth |
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CN203812904U true CN203812904U (en) | 2014-09-03 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103606619A (en) * | 2013-11-30 | 2014-02-26 | 中山达华智能科技股份有限公司 | Near ultraviolet light-emitting diode capable of promoting growth of plants and preparing method thereof |
CN109638145A (en) * | 2018-11-22 | 2019-04-16 | 华南农业大学 | Red blue light glass ceramics turns optical assembly, preparation method and plant lamp |
-
2013
- 2013-11-30 CN CN201320771642.2U patent/CN203812904U/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103606619A (en) * | 2013-11-30 | 2014-02-26 | 中山达华智能科技股份有限公司 | Near ultraviolet light-emitting diode capable of promoting growth of plants and preparing method thereof |
CN109638145A (en) * | 2018-11-22 | 2019-04-16 | 华南农业大学 | Red blue light glass ceramics turns optical assembly, preparation method and plant lamp |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140903 Termination date: 20191130 |
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CF01 | Termination of patent right due to non-payment of annual fee |