CN111668200B - Inverted high-voltage LED light source and illumination equipment for plant light supplement - Google Patents

Inverted high-voltage LED light source and illumination equipment for plant light supplement Download PDF

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CN111668200B
CN111668200B CN201910172491.0A CN201910172491A CN111668200B CN 111668200 B CN111668200 B CN 111668200B CN 201910172491 A CN201910172491 A CN 201910172491A CN 111668200 B CN111668200 B CN 111668200B
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light
voltage
chip
electrode bonding
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CN111668200A (en
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潘翔
李许可
胡召彬
姚春霞
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HANGZHOU HANHUI OPTOELECTRONIC Tech CO Ltd
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HANGZHOU HANHUI OPTOELECTRONIC Tech CO Ltd
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Priority to PCT/CN2019/114979 priority patent/WO2020177359A1/en
Priority to US17/436,663 priority patent/US12051677B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G7/00—Botany in general
    • A01G7/04—Electric or magnetic or acoustic treatment of plants for promoting growth
    • A01G7/045—Electric or magnetic or acoustic treatment of plants for promoting growth with electric lighting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/14—Measures for saving energy, e.g. in green houses

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  • Life Sciences & Earth Sciences (AREA)
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Abstract

The invention discloses a flip-chip high-voltage LED light source for plant light supplement and illumination equipment, wherein the flip-chip high-voltage LED light source for plant light supplement comprises a substrate, a high-voltage LED chip set and a rubber powder layer; a glue powder layer covers the upper part of the LED wafer; the LED wafer is fixed on the substrate through the adhesive powder layer, and the adhesive powder layer is a mixture of a transparent adhesive medium and red fluorescent particles. The inverted high-voltage LED light source for plant light supplement has high working voltage, the working voltage of a packaged finished product is easy to approach to commercial power, the efficiency of a power supply is improved, and the line loss of the inverted high-voltage LED light source for plant light supplement in finished product application is obviously lower than that of a traditional DCLED wafer due to low working current; meanwhile, the flip-chip high-voltage LED light source for plant light supplement reduces the die bonding and bonding quantity of the chip, and is beneficial to reducing the packaging cost.

Description

Inverted high-voltage LED light source and illumination equipment for plant light supplement
Technical Field
The invention relates to an inverted high-voltage LED light source and illumination equipment for plant light supplement, and belongs to the technical field of facility agriculture illumination.
Background
The LED plant illumination system is core technical equipment of facility agriculture and provides photosynthetic energy and illumination signals for plant production. The plant physiological response mechanism of the LED as a novel light source is widely disclosed, and the biological basis of the application is very clear. The current LED plant growth lamp generally adopts 2 LED light sources of red and blue light or uses 2 LED light sources of red and white light to mix to manufacture the plant growth lamp. The inherent disadvantages of the conventional low-voltage LED light source and the lamp include short service life of a driving power supply, low conversion efficiency, poor heat dissipation of the low-voltage LED, incapability of working under high current and the like. In the LED lighting device, the luminous efficiency of the LED lighting device is affected by the luminous efficiency of the chip, the packaging method, and the driving efficiency. For devices containing LED chips (and/or one or more other solid state light emitting devices), the best performance driving technique is to have "high voltage, low current" rather than "low voltage, high current". The general small-sized LED chip operates under the current of 20-30 mA and the voltage of 3V, but the general power supply chip operates under the current of 350mA and 3V.
Thus, the low voltage LEDs of the prior art suffer from the following disadvantages:
firstly, the ratio of the red light to the blue light color spectrum of the plant lamp is generally 5: 1-10: preferably, the ratio of 1 to 7-8: 1, in a ratio of 1. The red LEDs are uniformly arranged on the premise of a small number of blue LEDs, or even if the light emission angle of the blue LEDs is adjusted to be optimal, the light quality of red light and blue light is insufficiently mixed, so that uneven light quality distribution is likely to occur.
And secondly, a driving power supply with larger external power is required, so that the electric energy conversion efficiency is low. The traditional gallium nitride-based light emitting diode works under direct current voltage, the voltage range is 2.9-3.5V, and the working current is usually 20 mA. In order to achieve the brightness required by the general illumination of the LED, the operating current of the LED chip is generally increased to over lioma, and currently, 100mA, 350mA and 700mA are commonly used. Since the commercial power system mainly uses ac high voltage, it is necessary to provide a stable current source by using an electric energy conversion method such as a step-down transformer or a rectifier to control the light emission of the LED. If a high-power LED chip with large current is adopted, a larger driving power supply is needed in the driving device, but the reliability of the driving power supply is not high (about 2 ten thousand hours) and the service life of the driving power supply is generally lower than that of an LED light source (as long as 5-10 ten thousand hours), which becomes a main bottleneck of the service life of the LED lighting device.
When alternating current commercial power is converted into direct current, a part of power is lost, so that the working efficiency of the LED is reduced; meanwhile, the additional transformer or rectifier increases the overall manufacturing cost, occupies a space to affect the appearance of the lighting tool, and generates heat to reduce the safety of the LED in long-term use.
And thirdly, the power type LED lamp generally works under a large current, the performance of the power type LED lamp is seriously influenced by the current expansion problem, the light emergence rate is low, and the power consumption is increased. Uneven current spreading easily causes current crowding, and the luminous efficiency of the device is greatly reduced. When the number of the LED lamp strings is fixed, when the alternating voltage input by the power input end of the LED driving system is increased, and the system current is not increased, the resistance value of the power tube is increased, so that the power consumption of the power tube is increased and the heating is serious, and when the temperature in a chip is increased to trigger over-temperature regulation, the total power of the system is increased and then decreased, so that the problems of unstable power and serious fluctuation occur; the line loss caused by large current driving is also higher, and the junction temperature of the chip rises under the injection of large current, so that the luminous efficiency is influenced. Therefore, the energy consumption is increased, the heat dissipation burden of the lamp is also increased, a heat dissipation structure with a complex structure is required to be designed or a heat sink is additionally arranged to cool, the cost is high, and the price of the plant LED lamp is difficult to reduce.
In addition, alternating current is commercial power AC220V, has voltage unstable phenomenon, and voltage fluctuation is very big, and can be more than 280V sometimes, and through resistance current limiting, the electric current also can fluctuate greatly, can not effectual constant current and protect the LED to the resistance can generate heat, consumes the electric energy, reduces the light efficiency. And the packaging application of the product increases the volume of the circuit product and the cost of assembly, routing, labor and the like.
Disclosure of Invention
The invention aims to provide a flip-chip high-voltage LED light source for plant light supplement, which enables the flip-chip high-voltage LED light source for plant light supplement to work under high voltage through a high-voltage LED wafer group, and solves the technical problem.
The technical scheme adopted by the invention for solving the technical problems is as follows: a flip-chip high-voltage LED light source for plant light supplement comprises a substrate, a high-voltage LED chip set and a rubber powder layer;
the high-voltage LED wafer group comprises a plurality of LED wafers which are connected in series and/or in parallel; the LED wafer is a blue LED wafer and/or an ultraviolet LED wafer;
an insulating layer is formed on the substrate, a connecting circuit is formed on the insulating layer, and a P electrode bonding pad and an N electrode bonding pad of the high-voltage LED wafer are welded on the connecting circuit in a eutectic welding, bonding or conductive adhesive bonding mode;
a glue powder layer covers the upper part of the LED wafer; the LED wafer is fixed on the substrate through the adhesive powder layer, and the adhesive powder layer is a mixture of a transparent adhesive medium and red fluorescent particles;
by controlling the weight ratio of the transparent adhesive medium of the adhesive powder layer to the red fluorescent particles and the thickness of the adhesive powder layer, the ratio of the number of red light photons to the number of blue light photons emitted by the inverted high-voltage LED light source for plant light supplement in unit time is 65-95: 5-35; or the ratio of the number of photons of the red light, the blue light and the ultraviolet light emitted in unit time is 70-95: 5-30: 1-5.
Optionally, the blue light and the ultraviolet light emitted by the blue light LED chip and the ultraviolet LED chip form a spectrum matched with the photosynthesis curve after wavelength conversion through the red fluorescent particles in the adhesive powder layer, and are suitable for illumination requirements of different growth stages of plant growth;
the light emitted by the blue light LED wafer is blue light with the dominant wavelength range of 400nm to 480nm, the red fluorescent particles of the rubber powder layer are excited by the blue light to generate red light with the dominant wavelength range of 600nm to 680nm, and the unexcited blue light and the light converted by excitation form a spectrum matched with the spectral characteristics of plant photosynthesis;
the light emitted by the ultraviolet LED wafer is ultraviolet light with the dominant wavelength range of 320nm to 400nm, the red fluorescent particles of the rubber powder layer are excited by the ultraviolet light to generate red light with the dominant wavelength range of 600nm to 680nm, and the un-excited ultraviolet light and the light converted by excitation form a spectrum which accords with the characteristic of a plant photosynthesis curve.
Optionally, the blue LED chip is an LED chip having a light emission peak in a range of 400nm to 480nm or a combination of LED chips having different wavelengths, and the ultraviolet LED chip is an LED chip having a light emission peak in a range of 320nm to 400nm or a combination of LED chips having different wavelengths.
Optionally, the LED wafer is a flip-chip LED wafer, and the LED wafer includes a substrate layer, an N-GaN layer, a light emitting layer, a P-GaN layer, and a transparent conductive layer, which are sequentially stacked under the substrate layer; the LED chip is also provided with a P electrode bonding pad and an N electrode bonding pad, the P electrode bonding pad and the N electrode bonding pad are arranged on the same side of the chip, the P electrode bonding pad is arranged on the transparent conducting layer, the N electrode bonding pad is arranged on the N-GaN layer, and the P electrode bonding pad and the N electrode bonding pad are mutually electrically isolated; and each LED wafer is inversely welded on the substrate and is interconnected through a connecting circuit on the substrate.
Optionally, the operating voltage of the flip-chip LED chip is 9-220V, the plurality of flip-chip LED chips are connected in series and/or in parallel, and are driven by an external direct current or alternating current voltage, and the driving voltage is equal to or close to an external AC or DC operating voltage.
Optionally, the LED chips are connected in series, and the P-electrode pad of one LED chip is connected to the N-electrode pad of another LED chip through a connection circuit;
or the LED wafers are connected in series first and then in parallel, the LED wafers at least comprise two LED wafer groups connected in parallel, and the P electrode bonding pads and the N electrode bonding pads of the LED wafers in the LED wafer groups are connected in series through the connecting electrodes;
or the LED wafers are connected in a parallel connection mode and then in a series connection mode, the LED wafer group at least comprises two LED wafer groups which are connected in series, and the P electrode bonding pad and the N electrode bonding pad of the LED wafer in the LED wafer group are connected in parallel through the connecting electrodes.
The invention also adopts the following technical scheme to solve the technical problem: an illumination device comprises the inverted high-voltage LED light source for plant light supplement.
Optionally, the illumination device further comprises an LED driver;
the LED driver is connected with the high-voltage LED wafer group; the LED driver is used for driving the high-voltage LED chip set; the LED driver is communicated with an external AC or DC power supply.
Optionally, the illumination device further comprises an electrical connector;
the electric connector is connected with the high-voltage LED wafer group and communicated with an external AC or DC power supply.
The invention has the following beneficial effects: the inverted high-voltage LED light source for plant light supplement excites red fluorescent powder or mixed fluorescent powder taking red as a main body through the high-voltage direct current chip, so that the light source area is small, and the light quality is uniformly distributed; the working voltage of the light source is high, the working voltage of a packaged finished product is easy to approach to the commercial power, the conversion efficiency of the driving power supply is improved, and the cost of the driving power supply is reduced; the operating current is low, and the line loss of the LED chip in finished product application is also obviously lower than that of the traditional DC LED chip; the working current is small, the generated heat is less, the thermal resistance is reduced, the stability of the lighting effect is improved, and the service life of the LED light source is prolonged; in addition, the flip-chip high-voltage LED light source for plant light supplement reduces the die bonding and bonding quantity of the chip, and is beneficial to reducing the packaging cost.
Drawings
FIG. 1 is a schematic structural view of a flip-chip high-voltage LED light source for supplementing light to plants according to the present invention;
the notation in the figures means: 1-a substrate; 2-an insulating layer; 3-connecting a circuit; 4-an LED wafer; 5-gummed powder layer.
Detailed Description
The technical solution of the present invention is further described below with reference to the following embodiments and the accompanying drawings.
Example 1
The embodiment provides a flip-chip high-voltage LED light source for plant light supplement, which comprises a substrate, a high-voltage LED chip set and a rubber powder layer.
The high voltage LED wafer set includes a plurality of LED wafers connected in series and/or in parallel, and in this embodiment, the LED wafer is any one selected from the group consisting of: a semiconductor light emitting diode; an Organic Light Emitting Diode (OLED); a quantum dot light emitting diode QLED and a Micro-LED; more preferably, the LED chip is a blue LED chip and/or an ultraviolet LED chip, the blue LED chip is an LED chip having a light emission peak in a range of 400nm to 480nm or a combination of LED chips having different wavelengths, and the ultraviolet LED chip is an LED chip having a light emission peak in a range of 320nm to 400nm or a combination of LED chips having different wavelengths. Herein, "high voltage" in the present invention means that a voltage drop across an LED light source is at least three times greater than a voltage array of one LED light emitting device in the LED light source.
An insulating layer is formed on the substrate, a connecting circuit (printed circuit) is formed on the insulating layer, and a P electrode bonding pad and an N electrode bonding pad of the high-voltage LED wafer are welded on the connecting circuit; thereby realizing the series connection and the parallel connection of the LED chips through the connecting circuit.
A glue powder layer covers the LED wafer; in this embodiment, the adhesive powder layer fixes the LED chip on the substrate, and is a mixture of a transparent adhesive medium and red fluorescent particles, wherein a weight ratio of the transparent adhesive medium to the red fluorescent particles is 100:10-150, and may be 100:50 or 100:100 as a preferred scheme.
Preferably, the red fluorescent particles are Mn-coated4+An activated fluorogermanate phosphor having at least one element selected from alkaline earth metal elements and at least one element selected from alkali metal elements in the composition, comprising Eu (Eu)2+Activated phosphor such as aluminate, silicate, phosphate, etc., having at least one element selected from Sr and Ca in composition and Al, including Eu2+Phosphor of activated silicon nitride such as CaAlSiN 3: eu-based phosphor and Eu-containing phosphor2+A phosphor of a sulfide of Ca or Sr, and at least one element or ion selected from the group consisting of alkali metal elements and ammonium ions NH4+ and at least one element selected from the group consisting of group 4 elements and group 14 elements in the composition, and containing Mn4+Activated fluoride phosphors such as K2SiF6At least one of the above, or a combination thereof.
Preferably, the red fluorescent particles are e.g. Eu-containing2+Active nitride red fluorescent particles, Mn4+Doped K2SiF6The red fluorescent particles can enable the red fluorescent particles to emit red light with the dominant wavelength of 660nm +/-20 nm, and the mass ratio of the red fluorescent particles to the red fluorescent particles is 4: 1.
The blue light and the ultraviolet light emitted by the blue light LED wafer and the ultraviolet LED wafer form a spectrum matched with a photosynthesis curve after wavelength conversion through the red fluorescent particles in the adhesive powder layer, and the LED light source is suitable for illumination requirements of different growth stages of plant growth.
The light emitted by the blue light LED wafer is blue light with the dominant wavelength range of 400nm to 480nm, the red fluorescent particles of the rubber powder layer are excited by the blue light to generate red light with the dominant wavelength range of 600nm to 680nm, and the unexcited blue light and the light converted by excitation form a spectrum matched with the photosynthesis spectral characteristics of plants.
The light emitted by the ultraviolet LED wafer is ultraviolet light with the dominant wavelength range of 320nm to 400nm, the red fluorescent particles of the rubber powder layer are excited by the ultraviolet light to generate red light with the dominant wavelength range of 600nm to 680nm, and the un-excited ultraviolet light and the light converted by excitation form a spectrum which accords with the characteristics of a plant photosynthesis curve; and the photon flux density of red light is greater than the photon density of blue light and the photon flux density of ultraviolet light.
In the embodiment, the ratio of the red light to the blue light photons emitted by the inverted high-voltage LED light source for plant light supplement in unit time is 65-95: 5-35 by controlling the weight ratio of the transparent adhesive medium and the red fluorescent particles of the adhesive powder layer and the thickness of the adhesive powder layer; or the ratio of the number of photons of the red light, the blue light and the ultraviolet light emitted in unit time is 70-95: 5-30: 1-5.
Moreover, yellow fluorescent particles or infrared fluorescent particles can be added into the adhesive powder layer, and the ratio of red light to blue light to the number of infrared light photons emitted by the normally-installed high-voltage LED light source for plant light supplement in unit time is 65-95: 5-30: 1-15 according to the ratio of the red fluorescent particles to the infrared fluorescent particles; or the ratio of the number of photons of the red light, the blue light, the infrared light and the ultraviolet light emitted in unit time is 70-95: 5-30: 1-15: 1-10.
Or the proportion of the red fluorescent particles to the yellow fluorescent particles is adjusted, so that the photon number proportion of red light to blue light to green light (composite light of red light and yellow light) emitted by the forward-mounted high-voltage LED light source for plant light supplement in unit time is 65-95: 5-30: 5-25; or the ratio of the number of photons of the red light, the blue light, the green light and the ultraviolet light emitted in unit time is 70-95: 5-30: 5-20: 1-5.
Preferably, the thickness of the latex layer may be set to 0.6mm to 1.0mm so that the ratio of photon flux densities is within the above range.
Moreover, the adhesive powder layer is also doped with blue fluorescent particles, so that the ultraviolet LED wafer can be used for laser the blue fluorescent particles to generate blue light with the dominant wavelength range of 400nm to 480nm, and when the proportion of the ultraviolet LED wafer to the total LED wafer is large, the number of ultraviolet photons is reduced and the number of blue photons is increased through the blue light generated by the blue fluorescent particles.
Preferably, the content of the blue fluorescent particles in the adhesive powder layer may be 10% to 30% of the total weight of the adhesive powder layer.
As the adhesive medium, thermoplastic resin, thermosetting resin, silica gel, or the like can be used. The adhesive medium may contain other components such as a filler, a light stabilizer, and a colorant in addition to the phosphor and the sealing material. Examples of the filler include silica, barium titanate, titanium oxide, and alumina.
In the embodiment, the LED wafer is a flip-chip LED wafer, and the LED wafer comprises a substrate layer, an N-GaN layer, a light emitting layer, a P-GaN layer and a transparent conducting layer which are sequentially stacked below the substrate layer; a P electrode bonding pad and an N electrode bonding pad are further arranged on the LED wafer, the P electrode bonding pad is arranged on the transparent conducting layer, and the N electrode bonding pad is arranged on the N-GaN layer; the P electrode bonding pad and the N electrode bonding pad are mutually and electrically isolated; and each LED wafer is inversely welded on the substrate and is interconnected through a connecting circuit on the substrate.
The working voltage of the flip-chip LED chips is 9-220V, the flip-chip LED chips are connected in series and/or in parallel and driven by external direct current or alternating current voltage, and the driving voltage is equal to or close to the external AC or DC working voltage.
Specifically, the LED chips are connected in series, and a P electrode pad of one LED chip is connected with an N electrode pad of another LED chip;
or the LED wafers are connected in series first and then in parallel, the LED wafers at least comprise two LED wafer groups connected in parallel, and the P electrode bonding pads and the N electrode bonding pads of the LED wafers in the LED wafer groups are connected in series through connecting electrodes;
or the LED wafers are connected in a parallel connection mode and then in a series connection mode, the LED wafer group at least comprises two LED wafer groups which are connected in series, and the P electrode bonding pad and the N electrode bonding pad of the LED wafer in the LED wafer group are connected in parallel through the connecting electrodes.
Or, the high-voltage LED wafer group only comprises one high-voltage LED wafer, and the high-voltage LED wafer comprises a plurality of LED sub-wafers connected in series and/or in parallel; the LED sub-wafer is a blue LED sub-wafer and/or an ultraviolet LED sub-wafer.
The high-voltage LED wafer is an inverted high-voltage LED wafer;
isolation grooves are formed among the LED sub-wafers, the isolation grooves extend to the substrate layer, and insulating medium layers are arranged in the isolation grooves;
the LED sub-wafer comprises a substrate layer, an N-GaN layer, a light emitting layer, a P-GaN layer and a transparent conducting layer, wherein the N-GaN layer, the light emitting layer, the P-GaN layer and the transparent conducting layer are sequentially stacked below the substrate layer;
the LED sub-chip is also provided with a P electrode bonding pad and an N electrode bonding pad, the P electrode bonding pad and the N electrode bonding pad are arranged on the same side of the chip, the P electrode bonding pad is arranged on the transparent conducting layer, the N electrode bonding pad is arranged on the N-GaN layer, and the P electrode bonding pad and the N electrode bonding pad are mutually electrically isolated;
and the N electrode and the P electrode between the adjacent LED sub-chips are sequentially connected through the metal conductive film, and the inside and the outside of the metal conductive film are both coated by the insulating layer.
The LED sub-wafers are connected in series, and a P electrode bonding pad of one LED sub-wafer is connected with an N electrode bonding pad of the other LED sub-wafer through a metal conductive film;
or the LED sub-wafers are connected in series first and then in parallel, the LED sub-wafers at least comprise two LED sub-wafer groups connected in parallel, and the P electrode bonding pads and the N electrode bonding pads of the LED sub-wafers in the LED sub-wafer groups are connected in series through the metal conductive films;
or the LED sub-wafers are connected in a parallel connection mode and then in a series connection mode, the LED sub-wafers at least comprise two LED sub-wafer groups connected in series, and the P electrode bonding pads and the N electrode bonding pads of the LED sub-wafers in the LED sub-wafer groups are connected in parallel through the connecting electrodes.
In this embodiment, a thermal insulation layer may be disposed between the adhesive powder layer and the LED chip, considering that a part of the fluorescent particles need to operate in a low temperature environment.
The inverted high-voltage LED light source for plant light supplement has high working voltage, the working voltage of a packaged finished product is easy to approach to commercial power, the conversion efficiency of a driving power supply is improved, and the line loss of the inverted high-voltage LED light source for plant light supplement in finished product application is obviously lower than that of a traditional DC LED wafer due to low working current; the working current is small, the generated heat is less, the thermal resistance is reduced, the stability of the lighting effect is improved, and the service life of the LED light source is prolonged; in addition, the flip-chip high-voltage LED light source for plant light supplement reduces the die bonding and bonding quantity of the chip, and is beneficial to reducing the packaging cost.
Compared with a high-voltage diode which is generally realized by connecting a plurality of light-emitting diodes in series in a routing mode, the inverted high-voltage LED light source for plant light supplement can obtain lower thermal resistance, and a smaller heat dissipation module can be adopted in the manufacture of a lamp.
The high-voltage LED wafer is driven by low current, so that the reliability of a high-voltage LED device is improved, and the line loss in the application process is reduced: meanwhile, the design requirements on a heat dissipation shell and a heat dissipation system can be greatly reduced, and the packaging cost is reduced.
The flip-chip high-voltage LED light source for plant light supplement has two advantages: the light emitting efficiency of an LED light source is improved, and the driving cost and the weight of a light emitting diode lighting lamp are effectively reduced; secondly, high voltage, the low current work reduces and generates heat to reduce the requirement to cooling system, the lamps and lanterns structure can save heat radiation material.
Meanwhile, the inverted high-voltage LED light source for plant light supplement can work only by the high-voltage linear constant current source, and the high-voltage linear constant current source is free of a transformer and an electrolytic capacitor, so that the service life problems of a driving power supply and the electrolytic capacitor of a common LED are solved.
The inverted high-voltage LED light source for plant light supplement is adopted to develop lighting products, a driving power supply can be greatly simplified, and the overall power consumption can be greatly reduced, so that the design requirement of a radiating shell is greatly reduced, and the cost of a lighting lamp is effectively reduced.
Example 2
The present embodiment provides an illumination device, which includes the flip-chip high-voltage LED light source for supplementing light to plants in embodiment 1.
Furthermore, the illumination device further comprises an electrical connector and an LED driver.
The substrate can be prepared from one of aluminum nitride, a copper substrate, a copper alloy substrate, aluminum oxide, an epoxy resin molding compound, silicon carbide, diamond, silicon, a graphite aluminum substrate, an aluminum iron alloy substrate, a high-thermal-conductivity plastic substrate or an aluminum-coated plastic substrate, wherein the opaque substrate is prepared from materials such as aluminum nitride, a nitride shed, aluminum oxide, an epoxy resin molding compound, silicon carbide, diamond, silicon, graphite or a nano carbon material; the transparent substrate is made of transparent glass, transparent sapphire, transparent quartz glass, transparent ceramic or transparent plastic and the like.
The LED driver is connected with the high-voltage LED wafer group; the LED driver is connected with the connecting circuit of the substrate and is used for driving the high-voltage LED chip set; the LED driver is communicated with an external AC or DC power supply, wherein the connecting circuit on the substrate can be a printed circuit.
The electric connector is connected with the high-voltage LED wafer set and communicated with an external AC or DC power supply so as to take electricity from power supply equipment such as a power grid and directly drive the high-voltage LED wafer set through the electric connector.
The forward mounted high voltage LED light source for plant light supplement and the illumination device are used in one or more of the following applications: artificial climate boxes, illumination incubators, plant factories, tissue culture rooms, facility agriculture and the like.
The sequence of the above embodiments is only for convenience of description and does not represent the advantages and disadvantages of the embodiments.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (7)

1. A flip-chip high-voltage LED light source for plant light supplement is characterized by comprising a substrate, a high-voltage LED chip set and a rubber powder layer;
an insulating layer is formed on the substrate, a connecting circuit is formed on the insulating layer, and a P electrode bonding pad and an N electrode bonding pad of the high-voltage LED wafer group are welded on the connecting circuit in a eutectic welding, bonding or conductive adhesive bonding mode;
the high-voltage LED wafer group comprises a plurality of LED wafers which are connected in series and/or in parallel; the LED wafer is a blue LED wafer and/or an ultraviolet LED wafer;
the LED wafer is a flip-chip LED wafer, and comprises a substrate layer, an N-GaN layer, a light emitting layer, a P-GaN layer and a transparent conducting layer which are sequentially stacked below the substrate layer; the LED chip is also provided with a P electrode bonding pad and an N electrode bonding pad, the P electrode bonding pad and the N electrode bonding pad are arranged on the same side of the chip, the P electrode bonding pad is arranged on the transparent conducting layer, the N electrode bonding pad is arranged on the N-GaN layer, and the P electrode bonding pad and the N electrode bonding pad are mutually electrically isolated;
the LED wafers are connected in series, and a P electrode bonding pad of one LED wafer is connected with an N electrode bonding pad of the other LED wafer through a connecting electrode; or the LED wafers are connected in series first and then in parallel, the LED wafers at least comprise two LED wafer groups connected in parallel, and the P electrode bonding pads and the N electrode bonding pads of the LED wafers in the LED wafer groups are connected in series through connecting electrodes; or the LED wafers are connected in a parallel connection mode and then in a series connection mode, the LED wafers at least comprise two LED wafer groups which are connected in series, and the P electrode bonding pads and the N electrode bonding pads of the LED wafers in the LED wafer groups are connected in parallel through connecting electrodes;
a glue powder layer covers the upper part of the LED wafer; the LED wafer is fixed on the substrate through the adhesive powder layer, and the adhesive powder layer is a mixture of a transparent adhesive medium and red fluorescent particles;
by controlling the weight ratio of the transparent adhesive medium of the adhesive powder layer to the red fluorescent particles and the thickness of the adhesive powder layer, the ratio of the number of red light photons to the number of blue light photons emitted by the inverted high-voltage LED light source for plant light supplement in unit time is 65-95: 5-35; or the ratio of the number of photons of the red light, the blue light and the ultraviolet light emitted in unit time is 70-95: 5-30: 1-5.
2. The flip-chip high-voltage LED light source for plant light supplement of claim 1, wherein blue light and ultraviolet light emitted by the blue light LED chip and the ultraviolet LED chip pass through red fluorescent particles in the adhesive powder layer, and form a spectrum matched with a photosynthesis curve after wavelength conversion, so that the light supplement is suitable for illumination requirements of different growth stages of plant growth;
the light emitted by the blue light LED wafer is blue light with the dominant wavelength range of 400nm to 480nm, the red fluorescent particles of the rubber powder layer are excited by the blue light to generate red light with the dominant wavelength range of 600nm to 680nm, and the unexcited blue light and the light converted by excitation form a spectrum matched with the spectral characteristics of plant photosynthesis;
the light emitted by the ultraviolet LED wafer is ultraviolet light with the dominant wavelength range of 320nm to 400nm, the red fluorescent particles of the rubber powder layer are excited by the ultraviolet light to generate red light with the dominant wavelength range of 600nm to 680nm, and the un-excited ultraviolet light and the light converted by excitation form a spectrum which accords with the characteristic of a plant photosynthesis curve.
3. The flip-chip high-voltage LED light source for supplementing light to plants according to claim 2, wherein the blue LED chip is an LED chip having a light emission peak in a range of 400nm to 480nm or a combination of LED chips having different wavelengths, and the ultraviolet LED chip is an LED chip having a light emission peak in a range of 320nm to 400nm or a combination of LED chips having different wavelengths.
4. The flip-chip high-voltage LED light source for plant light supplement of claim 1, wherein the operating voltage of the flip-chip LED chip is 9-220V, and the plurality of flip-chip LED chips are connected in series and/or in parallel and driven by an external DC or AC voltage, and the driving voltage is equal to or close to an external AC or DC operating voltage.
5. An illumination device, comprising a flip-chip high-voltage LED light source for supplementing light to plants according to any one of claims 1 to 4.
6. The illumination device according to claim 5, further comprising an LED driver;
the LED driver is connected with the high-voltage LED wafer group; the LED driver is used for driving the high-voltage LED chip set; the LED driver is communicated with an external AC or DC power supply.
7. The illumination device according to claim 6, further comprising an electrical connector;
the electric connector is connected with the high-voltage LED wafer group and communicated with an external AC or DC power supply.
CN201910172491.0A 2019-03-07 2019-03-07 Inverted high-voltage LED light source and illumination equipment for plant light supplement Active CN111668200B (en)

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CN201910172491.0A CN111668200B (en) 2019-03-07 2019-03-07 Inverted high-voltage LED light source and illumination equipment for plant light supplement
PCT/CN2019/114979 WO2020177359A1 (en) 2019-03-07 2019-11-01 High voltage led chip set, led light source for plant light supplementation and illuminating device
US17/436,663 US12051677B2 (en) 2019-03-07 2019-11-01 High voltage LED chip set, LED light source for plant light supplementation and illuminating device

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CN108022922A (en) * 2017-11-10 2018-05-11 江苏稳润光电科技有限公司 One kind is suitable for plant illumination LED light source
CN207705238U (en) * 2017-12-29 2018-08-07 厦门市三安光电科技有限公司 A kind of high-voltage LED
CN109058778A (en) * 2018-08-23 2018-12-21 清华大学深圳研究生院 A kind of household plant factory LED illumination lamp

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103220902A (en) * 2010-11-25 2013-07-24 夏普株式会社 Light emitting device, LED light source for plant cultivation, and plant factory
CN104766916A (en) * 2014-01-07 2015-07-08 易美芯光（北京）科技有限公司 LED integrated light source adopting inverted blue light chip for packaging
CN204348757U (en) * 2014-12-11 2015-05-20 北京中科天顺信息技术有限公司 Fluorescence switch plant growth lamp unit, plant growth lamp components and plant growth lamp
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