CN104766916A - LED integrated light source adopting inverted blue light chip for packaging - Google Patents
LED integrated light source adopting inverted blue light chip for packaging Download PDFInfo
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- CN104766916A CN104766916A CN201410006132.5A CN201410006132A CN104766916A CN 104766916 A CN104766916 A CN 104766916A CN 201410006132 A CN201410006132 A CN 201410006132A CN 104766916 A CN104766916 A CN 104766916A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
The invention provides an LED integrated light source adopting inverted blue light chip for packaging. The LED integrated light source comprises a MC PCB substrate, an LED chip array, and a phosphor silica gel layer. The LED chip array is in an inverted arrangement, and the LED chip structure is, from top to bottom, sequentially provided with a sapphire substrate, an N-GaN layer, a MQWs layer, a P-GaN layer, and a metal reflective layer. An N electrode and a P electrode are respectively welded on the MCPCB substrate. The LED integrated light source adopting the inverted GaN LED chip is advantageous in that the higher luminous efficiency and the higher reliability can be provided by comparing with the LED integrated light source provided with the GaN LED chip having the horizontal structure and the GaN LED chip having the vertical structure.
Description
Technical field
The present invention relates to a kind of LED integrated optical source technology, particularly relate to a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate.
Background technology
Adopt the LED integrated optical source of MCPCB substrate, be generally divided into horizontal structure LED and vertical stratification at present.Reflector is divided into solder mask as reflector or silver-plated as two kinds, reflector mode.
As shown in Figure 1, solder mask is as the MCPCB substrate LED integrated optical source in reflector, for horizontal structure LED integrated light source structure, by fluorescent powder silica gel layer 5, solder mask 1(white oil layer), circuit layer 2(copper foil layer), thermally conductive insulating layer 3 and metal-based layer 4(aluminium base), LED chip array 6, gold-plated or silver-plated pad 17, to form.Solder mask 1 is generally white ink, and major function is that protective circuit layer does not expose in atmosphere, and what prevent between the circuit of circuit layer is creepage, short circuit; Meanwhile, in semiconductor components and devices (resistance, electric capacity, integrated chip etc.) Reflow Soldering paster process, for limiting the flow range when melts soldering tin is in a liquid state shape, make it on the pin pad of the connection semiconductor device being confined to MCPCB setting.But the reflectivity of welding resistance white oil is very low, the general reflectivity that to correspond between 450nm to 700nm wavelength is at 83%-90%.So low as the light efficiency of the LED integrated optical source in reflector with solder mask 1, light efficiency is in 85 lumens/watt (3000K, RA80) left and right.
The shortcoming of horizontal structure GaN LED chip:
1) have electrode metal to block, light extraction efficiency reduces.
2) the uneven voltage that causes of CURRENT DISTRIBUTION raises, and light efficiency reduces.
3) when transshipping use, the non-linear decline of L-I is excessive, and light efficiency declines.
4) antistatic effect is low, and reliability reduces.
5) the chip light-emitting face of horizontal structure GaN LED directly contacts with silica gel, and the refractive index due to chip GaN is 2.4, and the refractive index of silica gel is 1.41-1.54, and difference of them is very large, and result in the cirtical angle of total reflection is 36.7-45.1 degree, and light total reflection loss is larger.And comparing the sapphire silica gel interface that refractive index is 1.7, the cirtical angle of total reflection is 51.1-70.8 degree, and light total reflection loss is less.
6) PN junction of the direct contact chip of fluorescent material, fluorescent material temperature near PN junction is high, and fluorescent material efficiency is low, and light extraction efficiency is low, fluorescent material light for a long time after decay fast.
7) die junction is away from base plate for packaging, and junction temperature is high, and thermal resistance rises, and light extraction efficiency reduces, and chip reliability reduces.
8) connection of both positive and negative polarity and MCPCB substrate 10 or chip, needs two gold threads, cost increase.
As shown in Figure 2, the silver-plated MCPCB substrate LED integrated optical source as reflector, for vertical structure LED integrated light source structure, by fluorescent powder silica gel layer 5, silvered reflective layer 7, solder mask 1(white oil layer), circuit layer 2(copper foil layer), thermally conductive insulating layer 3 and metal-based layer 4(aluminium base), LED chip array 6 forms.The reflectivity of silver is very high, reaches be greater than 95% corresponding to reflectivity between 450nm to 700nm wavelength.But silver is very unstable chemical element in atmosphere, is easy to oxidized and sulfuration, produce silver oxide and the silver sulfide of black.Very high as the initial light efficiency of LED integrated optical source in reflector with silver, 100 lumens/watt (3000K, RA80) can be reached.But, in the application of long-time (several week is to some months) is lighted, air can penetrate through the fluorescent powder silica gel layer covering silver layer surface, the chemical reaction of sulfuration and oxidation is produced with silver, silver layer surface is caused to turn black, thus cause the reflectance reduction to visible ray of silver layer, cause the luminous flux attenuation of LED integrated optical source.Prior art can shorten the life-span of the LED integrated optical source of MCPCB base material while improve the light efficiency by the LED integrated optical source of MCPCB base material.
The shortcoming of vertical stratification GaN LED chip:
1) the chip light-emitting face of vertical stratification GaN LED directly contacts with silica gel, and the refractive index due to chip GaN is 2.4, and the refractive index of silica gel is 1.41-1.54, and difference of them is very large, and result in the cirtical angle of total reflection is 36.7-45.1 degree, and light total reflection loss is larger.And comparing the sapphire silica gel interface that refractive index is 1.7, the cirtical angle of total reflection is 51.1-70.8 degree, and light total reflection loss is less.
2) PN junction of the direct contact chip of fluorescent material, fluorescent material temperature near PN junction is high, and fluorescent material efficiency is low, and light extraction efficiency is low, fluorescent material light for a long time after decay fast.
3) die junction is away from base plate for packaging, and junction temperature is high, and thermal resistance rises, and light extraction efficiency reduces, and chip reliability reduces.
4) connection of both positive and negative polarity and MCPCB substrate 10 or chip, needs a gold thread, cost increase.
Summary of the invention
The technical problem that the present invention solves is, provides a kind of LED integrated optical source that can obtain than horizontal structure GaN LED chip and the higher light efficiency of vertical stratification GaN LED chip and reliability.
In order to solve the problem, the invention provides a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate, comprise MCPCB substrate, LED chip array and fluorescent powder silica gel layer, described LED chip array is inverted, and namely LED chip structure is followed successively by Sapphire Substrate, N-GaN layer, MQWs layer, P-GaN layer, metallic reflector from top to bottom; N electrode and P electrode are welded on described MCPCB substrate respectively.
Further, described MCPCB substrate comprises metal-based layer, thermally conductive insulating layer, circuit layer, solder mask from bottom to top successively.
Further, highly-reflective coating is provided with between described MCPCB substrate and described fluorescent powder silica gel layer.
Further, the material of described highly-reflective coating be 450nm to 700nm optical wavelength reflectivity is reached more than 95% material; Described highly-reflective coating material is silica type, epoxy resin.
Further, described coating layer thickness is from 1 micron to 500 microns.
Further, described highly-reflective coating, by the mode with printing, prints as sprayed, steel mesh printing, the method preparations such as silk screen printing.
Further, described metal-based layer is aluminium sheet or copper coin; Described thermally conductive insulating layer is that thermal resistance is little, viscoelastic property is excellent, has the ability special material of resistant to thermal aging; Described circuit layer is Copper Foil; Described solder mask is white ink; Described LED chip array is GaN chip array.
Further, described LED chip array is made up of multiple chips series, parallel; Chip string connection are by MCPCB line layer.
Further, described chip die bond has been come by scolding tin; The realization of scolding tin die bond, is by syringe dotting glue method, or is stained with glue method, or steel mesh print process prints to tin cream on the leg of MCPCB, completes die bond by high temperature reflux weldering mode.
Advantage of the present invention is:
The LED integrated optical source adopting upside-down mounting GaN LED chip to make, can obtain the higher light efficiency of the LED integrated optical source that makes than horizontal structure GaN LED chip and vertical stratification GaN LED chip and reliability.
Advantage than horizontal structure GaN LED chip:
1) electrodeless metal blocks, and light extraction efficiency improves.
2) homogeneous current distribution causes voltage to reduce, and light efficiency improves.
3) L-I has better linear relationship, the chip of comparable size, and applied power increases, and light efficiency does not obviously decline, and reduces costs.
4) antistatic effect is high, and reliability increases.
5) refractive index 1.7 of Sapphire Substrate is less than 2.4 of GaN, the cirtical angle of total reflection of sapphire/(silica gel+fluorescent material) and GaN/ (silica gel+fluorescent material) is respectively 51.1-70.8 degree and 36.7-45.1 degree, the light penetrated by sapphire surface in encapsulating structure is larger via the cirtical angle of total reflection of silica gel and fluorescent material boundary layer, and light total reflection loss reduces greatly.Light extraction efficiency improves.
6) the sapphire upper surface temperature that directly contacts of fluorescent material is low, and fluorescent material efficiency improves, and light extraction efficiency is high, and reliability increases.
7) die junction is near base plate for packaging, and junction temperature is low, and thermal resistance declines, and light extraction efficiency improves, and chip reliability increases.
8) connection of both positive and negative polarity and MCPCB substrate or chip is without the need to gold thread.Reduce costs.
Advantage than vertical stratification GaN LED chip:
1) refractive index 1.7 of Sapphire Substrate is less than 2.4 of GaN, the cirtical angle of total reflection of sapphire/(silica gel+fluorescent material) and GaN/ (silica gel+fluorescent material) is respectively 51.1-70.8 degree and 36.7-45.1 degree, the light penetrated by sapphire surface in encapsulating structure is larger via the cirtical angle of total reflection of silica gel and fluorescent material boundary layer, and light total reflection loss reduces greatly.Light extraction efficiency improves.
2) the sapphire upper surface temperature that directly contacts of fluorescent material is low, and fluorescent material efficiency improves, and light extraction efficiency is high, and reliability increases.
3) die junction is near base plate for packaging, and junction temperature is low, and thermal resistance declines, and light extraction efficiency improves, and chip reliability increases.
4) connection of both positive and negative polarity and MCPCB substrate or chip is without the need to gold thread.Reduce costs.
Accompanying drawing explanation
Fig. 1 is horizontal structure LED integrated light source structure schematic diagram.
Fig. 2 is vertical structure LED integrated light source structure schematic diagram.
Fig. 3 is a kind of LED integrated light source structure schematic diagram adopting upside-down mounting blue chip to encapsulate of the present invention.
Fig. 4 is a kind of upside-down mounting blue chip of the present invention structural representation.
Fig. 5 is the top view that LED integrated optical source of the present invention adopts MCPCB base material.
Fig. 6 is the LED integrated light source structure schematic diagram that the present invention's another kind adopts the encapsulation of upside-down mounting blue chip.
Embodiment
Hereinafter will be described in detail to embodiments of the invention by reference to the accompanying drawings.It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combination in any mutually.
Embodiment one:
The invention provides a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate as shown in accompanying drawing 3,4, comprise MCPCB substrate 10, LED chip array 6 and fluorescent powder silica gel layer 5, LED chip array 6 is inverted, and namely LED chip structure is followed successively by Sapphire Substrate 61, N-GaN layer 62, MQWs layer 63, P-GaN layer 64, metallic reflector 65 from top to bottom; N electrode 66 and P electrode 67 are welded on MCPCB substrate 10 respectively by welding material 68.
MCPCB substrate 10 comprises metal-based layer 4, thermally conductive insulating layer 3, circuit layer 2, solder mask 1 from bottom to top successively.
Metal-based layer 4 is aluminium sheet or copper coin; Thermally conductive insulating layer 3 is that thermal resistance is little, viscoelastic property is excellent, has the ability special material of resistant to thermal aging; Circuit layer 2 is Copper Foil; Solder mask 1 is white ink; LED chip array 6 is GaN chip array.Positive and negative electrode is welded on circuit layer 2 by scolding tin 27.
As shown in Figure 5, LED chip array is made up of multiple chips 6 series, parallel; Chip 6 is gone here and there and connection passes through MCPCB line layer.Fluorescent powder silica gel layer 5 is arranged in the scope of box dam glue 30 delineation.
Chip die bond has been come by scolding tin; The realization of scolding tin die bond, is by syringe dotting glue method, or is stained with glue method, or steel mesh print process prints to tin cream on the leg of MCPCB, completes die bond by high temperature reflux weldering mode.
The technology that the GaN LED of upside-down mounting Sapphire Substrate adopts is inverted by chip, and P electrode adopts the highly reflecting films covering whole Mesa, thus light is from Sapphire Substrate outgoing.(Mesa translator of Chinese is mesa structure)
Advantage than the GaN LED chip (Fig. 1) of horizontal structure Sapphire Substrate:
1) electrodeless metal blocks, and light extraction efficiency improves.
2) homogeneous current distribution causes voltage to reduce, and light efficiency improves.
3) L-I has better linear relationship, the chip of comparable size, and applied power increases, and light efficiency does not obviously decline, and reduces costs.
4) antistatic effect is high, and reliability increases.
5) refractive index 1.7 of Sapphire Substrate is less than 2.4 of GaN, the cirtical angle of total reflection of sapphire/(silica gel+fluorescent material) and GaN/ (silica gel+fluorescent material) is respectively 51.1-70.8 degree and 36.7-45.1 degree, the light penetrated by sapphire surface in encapsulating structure is larger via the cirtical angle of total reflection of silica gel and fluorescent material boundary layer, and light total reflection loss reduces greatly.Light extraction efficiency improves.
6) the sapphire upper surface temperature that directly contacts of fluorescent material is low, and fluorescent material efficiency improves, and light extraction efficiency is high, and reliability increases.
7) die junction is near base plate for packaging, and junction temperature is low, and thermal resistance declines, and light extraction efficiency improves, and chip reliability increases.
Advantage than the GaN LED chip (Fig. 2) of vertical stratification Sapphire Substrate:
1) refractive index 1.7 of Sapphire Substrate is less than 2.4 of GaN, the cirtical angle of total reflection of sapphire/(silica gel+fluorescent material) and GaN/ (silica gel+fluorescent material) is respectively 51.1-70.8 degree and 36.7-45.1 degree, the light penetrated by sapphire surface in encapsulating structure is larger via the cirtical angle of total reflection of silica gel and fluorescent material boundary layer, and light total reflection loss reduces greatly.Light extraction efficiency improves.
2) the sapphire upper surface temperature that directly contacts of fluorescent material is low, and fluorescent material efficiency improves, and light extraction efficiency is high, and reliability increases.
3) die junction is near base plate for packaging, and junction temperature is low, and thermal resistance declines, and light extraction efficiency improves, and chip reliability increases.
Embodiment two:
The invention provides a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate as shown in accompanying drawing 4,6, comprise MCPCB substrate 10, LED chip array 6 and fluorescent powder silica gel layer 5, LED chip array 6 is inverted, and namely LED chip structure is followed successively by Sapphire Substrate 61, N-GaN layer 62, MQWs layer 63, P-GaN layer 64, metallic reflector 65 from top to bottom; N electrode 66 and P electrode 67 are welded on MCPCB substrate 10 respectively.
MCPCB substrate 10 comprises metal-based layer 4, thermally conductive insulating layer 3, circuit layer 2, solder mask 1 from bottom to top successively.Positive and negative electrode is welded on circuit layer 2 by scolding tin 27.
Highly-reflective coating 8 is provided with between MCPCB substrate and fluorescent powder silica gel layer.
The material of highly-reflective coating 8 be 450nm to 700nm optical wavelength reflectivity is reached more than 95% material.Highly-reflective coating 8 material is silica type, epoxy resin.Highly-reflective coating 8 thickness is from 1 micron to 500 microns.Highly-reflective coating 8, by the mode with printing, prints as sprayed, steel mesh printing, the method preparations such as silk screen printing.
LED chip array is made up of multiple chips series, parallel; Chip string connection are by MCPCB line layer.
Chip die bond has been come by scolding tin; The realization of scolding tin die bond, is by syringe dotting glue method, or is stained with glue method, or steel mesh print process prints to tin cream on the leg of MCPCB, completes die bond by high temperature reflux weldering mode.
Owing to adopting highly-reflective coating to replace silvered reflective layer, solve the problem of silvered reflective layer easily oxidized and sulfuration and blackening.So the present embodiment than the advantage of the GaN LED chip (Fig. 1) of horizontal structure Sapphire Substrate and the GaN LED chip (Fig. 2) of vertical stratification Sapphire Substrate except described in embodiment one, also have and can improve luminous efficiency of source, also can extend the feature of light source life.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. adopt the LED integrated optical source that upside-down mounting blue chip encapsulates, comprise MCPCB substrate, LED chip array and fluorescent powder silica gel layer, it is characterized in that:
Described LED chip array is inverted, and namely LED chip structure is followed successively by Sapphire Substrate, N-GaN layer, MQWs layer, P-GaN layer, metallic reflector from top to bottom; N electrode and P electrode are welded on described MCPCB substrate respectively.
2. a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate as claimed in claim 1, is characterized in that:
Described MCPCB substrate comprises metal-based layer, thermally conductive insulating layer, circuit layer, solder mask from bottom to top successively.
3. a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate as claimed in claim 1 or 2, is characterized in that:
Highly-reflective coating is provided with between described MCPCB substrate and described fluorescent powder silica gel layer.
4. a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate as claimed in claim 3, is characterized in that:
The material of described highly-reflective coating be 450nm to 700nm optical wavelength reflectivity is reached more than 95% material; Described highly-reflective coating material is silica type, epoxy resin.
5. a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate as claimed in claim 4, is characterized in that:
Described coating layer thickness is from 1 micron to 500 microns.
6. a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate as claimed in claim 5, is characterized in that:
Described highly-reflective coating, by the mode with printing, prints as sprayed, steel mesh printing, the method preparations such as silk screen printing.
7. a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate as claimed in claim 6, is characterized in that:
Described metal-based layer is aluminium sheet or copper coin; Described thermally conductive insulating layer is that thermal resistance is little, viscoelastic property is excellent, has the ability special material of resistant to thermal aging; Described circuit layer is Copper Foil; Described solder mask is white ink; Described LED chip array is GaN chip array.
8. a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate as claimed in claim 7, is characterized in that:
Described LED chip array is made up of multiple chips series, parallel; Chip string connection are by MCPCB line layer.
9. a kind of LED integrated optical source adopting upside-down mounting blue chip to encapsulate as claimed in claim 8, is characterized in that:
Described chip die bond has been come by scolding tin; The realization of scolding tin die bond, is by syringe dotting glue method, or is stained with glue method, or steel mesh print process prints to tin cream on the leg of MCPCB, completes die bond by high temperature reflux weldering mode.
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| CN106571421A (en) * | 2015-10-08 | 2017-04-19 | 日亚化学工业株式会社 | Light-emitting device, integrated light-emitting device, and light-emitting module |
| CN106898684A (en) * | 2017-04-14 | 2017-06-27 | 桂林电子科技大学 | A kind of multi-chip and UVLED array supports of connecting |
| CN107039574A (en) * | 2017-04-10 | 2017-08-11 | 导装光电科技（深圳）有限公司 | Without substrate chip package LED and its manufacture craft |
| CN107092137A (en) * | 2017-06-28 | 2017-08-25 | 威海金丰电子有限公司 | Specular removal planar array type liquid crystal backlight |
| CN109087986A (en) * | 2018-08-30 | 2018-12-25 | 佛山市国星半导体技术有限公司 | A kind of flexible LED device and preparation method thereof, LED filament |
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| CN110085721A (en) * | 2018-01-25 | 2019-08-02 | 致伸科技股份有限公司 | Light source module |
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| CN106898684A (en) * | 2017-04-14 | 2017-06-27 | 桂林电子科技大学 | A kind of multi-chip and UVLED array supports of connecting |
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| CN110085720A (en) * | 2018-01-25 | 2019-08-02 | 致伸科技股份有限公司 | The manufacturing method of light source module and light source module |
| CN110085721A (en) * | 2018-01-25 | 2019-08-02 | 致伸科技股份有限公司 | Light source module |
| CN110085731A (en) * | 2018-01-25 | 2019-08-02 | 致伸科技股份有限公司 | Light source module |
| CN109087986A (en) * | 2018-08-30 | 2018-12-25 | 佛山市国星半导体技术有限公司 | A kind of flexible LED device and preparation method thereof, LED filament |
| CN110957411A (en) * | 2018-09-27 | 2020-04-03 | 昆山工研院新型平板显示技术中心有限公司 | Micro-LED chip, preparation method thereof and display device |
| CN111668200A (en) * | 2019-03-07 | 2020-09-15 | 杭州汉徽光电科技有限公司 | Inverted high-voltage LED light source and illumination equipment for plant light supplement |
| CN111668200B (en) * | 2019-03-07 | 2022-05-06 | 杭州汉徽光电科技有限公司 | Inverted high-voltage LED light source and illumination equipment for plant light supplement |
| CN110225651A (en) * | 2019-06-19 | 2019-09-10 | 深圳市洲明科技股份有限公司 | Wiring board and display screen |
| CN112399667A (en) * | 2019-08-12 | 2021-02-23 | 杭州汉徽光电科技有限公司 | High-voltage alternating-current LED light source for plant light supplement and illumination equipment |
| CN112397488A (en) * | 2019-08-12 | 2021-02-23 | 杭州汉徽光电科技有限公司 | High-voltage alternating current LED chip set, high-voltage alternating current LED light source and illumination equipment |
| CN112467018A (en) * | 2020-10-20 | 2021-03-09 | 深圳市隆利科技股份有限公司 | Mini-LED/micro-LED surface light source and manufacturing method thereof |
| CN113764546A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Mini-LED device, LED display module and manufacturing method thereof |
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