CN108799859B - All-solid-state high-brightness lighting device - Google Patents

All-solid-state high-brightness lighting device Download PDF

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Publication number
CN108799859B
CN108799859B CN201810683959.8A CN201810683959A CN108799859B CN 108799859 B CN108799859 B CN 108799859B CN 201810683959 A CN201810683959 A CN 201810683959A CN 108799859 B CN108799859 B CN 108799859B
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wavelength conversion
solid
conversion unit
state
laser
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CN201810683959.8A
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CN108799859A (en
Inventor
胡家林
黄种富
唐玉平
张丽芳
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Radium Optical Technology (ningbo) Co Ltd
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Radium Optical Technology (ningbo) Co Ltd
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00Fastening of light sources or lamp holders
    • F21V19/001Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F21V19/0015Fastening arrangements intended to retain light sources
    • F21V19/002Fastening arrangements intended to retain light sources the fastening means engaging the encapsulation or the packaging of the semiconductor device
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V5/00Refractors for light sources
    • F21V5/04Refractors for light sources of lens shape
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00Reflectors for light sources
    • F21V7/04Optical design
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/30Semiconductor lasers

Abstract

The invention provides an all-solid-state high-brightness lighting device which comprises an integrated device and a laser pumping source, wherein the integrated device comprises a substrate, a blue light emitting diode chip, a single-component solid-state wavelength conversion unit and a composite solid-state wavelength conversion unit, the blue light emitting diode chip and the composite solid-state wavelength conversion unit are both arranged on the surface of the substrate, the blue light emitting diode chip is arranged on the surface of the single-component solid-state wavelength conversion unit, the composite solid-state wavelength conversion unit is arranged between the two single-component solid-state wavelength conversion units, the laser pumping source comprises a blue laser and a lens group, and laser emitted by the blue laser directly enters the composite solid-state wavelength conversion unit or enters the composite solid-state wavelength conversion unit through focusing of the lens. Compared with the existing lighting device, the lighting device provided by the invention makes up the problems that the LED lighting device is insufficient in light source brightness and cannot carry out long-distance irradiation, and meanwhile, the lighting device also overcomes the defects that the laser lighting device is low in luminous flux and cannot meet the lighting breadth.

Description

All-solid-state high-brightness lighting device
Technical Field
The invention relates to an all-solid-state high-brightness lighting device, and belongs to the technical field of solid-state light-emitting lighting.
Background
At present, the LED white light device is mature day by day, but the LED white light device is limited by the light emitting angle of the LED chip and the package structure of the white light LED device, and the luminance of the white light obtained by the LED is limited, so that it is difficult to obtain a white light source with high collimation and long irradiation distance. Meanwhile, the output light power of the existing blue laser is limited, and the white light can not be obtained by using the method of exciting the wavelength conversion material by the laser because the luminous flux of the white light is limited.
There are currently devices that use white LEDs in combination with lasers and single component solid state wavelength conversion materials to achieve white light illumination, which can achieve a complementation of the two light source characteristics. But both are separate, resulting in a complex and bulky overall device. Meanwhile, as the laser illumination adopts a blue laser as an excitation light source, laser leakage is possibly caused when the single-component solid wavelength conversion material is lost, and irreversible damage is caused to human eyes and skin. However, the existing laser lighting device designs have no simple and easy precaution measures for blue laser overflow caused by loss of single-component solid-state wavelength conversion materials.
Disclosure of Invention
In view of the deficiencies in the prior art, it is an object of the present invention to provide an all-solid-state high brightness lighting device.
The invention is realized by the following technical scheme:
the invention provides an all-solid-state high-brightness lighting device which comprises an integrated device and a laser pumping source, wherein the integrated device comprises a substrate, a blue light emitting diode chip, a single-component solid-state wavelength conversion unit and a composite solid-state wavelength conversion unit, the blue light emitting diode chip and the composite solid-state wavelength conversion unit are both arranged on the surface of the substrate, the blue light emitting diode chip is arranged on the surface of the single-component solid-state wavelength conversion unit, the composite solid-state wavelength conversion unit is arranged between the two single-component solid-state wavelength conversion units, the laser pumping source comprises a blue laser and a lens group, and laser emitted by the blue laser directly enters the composite solid-state wavelength conversion unit or enters the composite solid-state wavelength conversion unit through focusing of the lens.
Preferably, the laser pump source further comprises a mirror, and the mirror is disposed between the lens assembly and the integrated device.
As preferred scheme, the number of blue light emitting diode chips is 1 ~ 100.
Preferably, the single-component solid wavelength conversion unit is one or more of a fluorescent glue film, fluorescent glass or fluorescent ceramic.
Preferably, the composite solid wavelength conversion unit is a composite of a central wavelength conversion material and an edge-wrapped reflective material.
As a preferred scheme, the number of the central wavelength conversion materials is 1-100, and the central wavelength conversion materials are arranged at the central position of the composite solid wavelength conversion unit in an array form; the number of the composite solid wavelength conversion units is 1-100, and the composite solid wavelength conversion units are arranged on the metallized ceramic substrate in an array mode.
Preferably, the central wavelength conversion material is rare earth ion doped Y3Al5O12A ceramic material or a single crystal material; the edge-wrapped reflective material is one of alumina, yttria or zirconia.
Preferably, the composite solid-state wavelength conversion unit and the metal electrode form a conductive path, and the conductive path is connected in series with the blue laser and the power supply to form a power supply loop.
The invention realizes the all-solid-state light-emitting device with high luminous flux and high brightness by integrating the blue light-emitting diode chip, the single-component solid-state wavelength conversion unit and the composite solid-state wavelength conversion unit in the same device. And meanwhile, carrying out graphic metallization on the composite solid wavelength conversion unit, and welding the composite solid wavelength conversion unit on a metallized ceramic substrate in a metal welding mode. The scheme of metalizing the surface of the composite solid wavelength conversion unit can metalize the whole surface to be metalized, so that a conductive path is formed by welding on an electrode of a ceramic substrate, and when the composite solid wavelength conversion unit is lost or damaged, the laser can be automatically powered off; preferably, stripe-shaped metallization is carried out on the interface of the composite of the two materials of the composite solid-state wavelength conversion unit so as to provide automatic power-off of the laser after the central wavelength conversion material of the composite solid-state wavelength conversion unit is lost or damaged; preferably, a central wavelength conversion material of the composite solid wavelength conversion unit is plated with a metal film, so that the wavelength conversion material can effectively dissipate heat during laser radiation, and meanwhile, the laser can be automatically powered off when the wavelength conversion material is lost, and the scheme effectively solves the safety problems of blue laser leakage and the like in laser illumination.
Compared with the prior art, the invention has the following beneficial effects:
compared with the existing lighting device, the lighting device overcomes the problems that the brightness of a light source is insufficient and long-distance irradiation cannot be carried out in the LED lighting device, and overcomes the defects that the luminous flux is low and the illumination width cannot be met in the laser lighting device. The lighting device integrates the wavelength conversion material of the LED lighting element in laser lighting into a single device through a semiconductor packaging process, so that the integration level of the lighting device is greatly improved, and the volume of the whole lighting device is reduced. Because the scheme is an integrated device designed by applying a semiconductor packaging process, the power expansion of the device can be simply realized by arraying the integrated device. In the aspect of preventing blue laser leakage, the back surface of the composite solid-state wavelength conversion unit is subjected to graphic metallization, the metallization circuit is welded on the metallized ceramic substrate and is formed on a loop in series connection with the blue laser, and once the composite solid-state wavelength conversion unit is damaged or lost, a power supply loop of the blue laser is disconnected, so that the blue laser leakage is prevented. Meanwhile, the back of the wavelength conversion material at the center of the composite solid wavelength conversion unit can be optimally subjected to thermoelectric separation type graphic metallization design, so that the composite solid wavelength conversion unit can bear blue light radiation with higher power density.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic diagram of one embodiment of a high luminous flux, high brightness all-solid-state lighting device;
FIG. 2 is a schematic diagram of one embodiment of a high luminous flux, high brightness all-solid-state lighting device;
FIG. 3 is a schematic diagram of one embodiment of a high luminous flux, high brightness all-solid-state lighting device;
FIG. 4 is a top view of one embodiment of an integrated device;
FIG. 5 is a top view of one embodiment of a metallized ceramic substrate;
FIG. 6 is a top view of one embodiment of an integrated device;
FIG. 7 is a top view of one embodiment of a metallized ceramic substrate;
FIG. 8 is a top view of one embodiment of an integrated device;
FIG. 9 is a top view of one embodiment of a metallized ceramic substrate;
FIG. 10 illustrates an embodiment of a composite solid wavelength conversion element coating scheme;
FIG. 11 is an embodiment of a composite solid wavelength conversion element coating scheme;
FIG. 12 is an embodiment of a composite solid wavelength conversion element coating scheme;
FIG. 13 is a schematic diagram of a blue laser diode power supply circuit.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications can be made by persons skilled in the art without departing from the spirit of the invention. All falling within the scope of the present invention.
As shown in fig. 1 to 13, the all-solid-state lighting device with high luminous flux and high brightness provided by the present invention is composed of two parts, one part is an integrated device 10, and the other part is a laser pump source 20, as shown in fig. 1 to 3, which are three embodiments of the device respectively. Wherein the integrated device 10 comprises a blue light LED chip 101, a single-component solid-state wavelength conversion unit 102, a composite solid-state wavelength conversion unit 103 and goldA metallized ceramic substrate 104. In a specific implementation, since the power of the lighting device is required to be larger in an application, the metalized ceramic substrate 104 is generally an aluminum nitride ceramic substrate with high thermal conductivity, and is patterned and metalized on the aluminum nitride substrate according to the actual requirements of the integrated device, and fig. 5, 7 and 9 are three metallization schemes of the aluminum nitride ceramic substrate, which respectively correspond to three different arrangements of the blue light led chip 101 and the composite solid-state wavelength conversion unit 103, as shown in fig. 6 and 8. The blue light emitting diode chips 101 may be arranged in an array, the single-component solid-state wavelength conversion unit 102 is fixed above the blue light emitting diode chips 101, and the single-component solid-state wavelength conversion unit 102 may be one or more of a fluorescent adhesive film, fluorescent ceramic or fluorescent glass. The composite solid wavelength conversion unit 103 is Y doped by rare earth ions3Al5O12Ceramic material or single crystal material and edge-wrapped reflecting material alumina (Al)2O3) Yttrium oxide (Y)2O3) Or zirconium oxide (Zr)2O3) Or one of them is compounded and formed into an integral form by high-temperature sintering. The back of the composite solid-state wavelength conversion unit 103 is metallized, and the scheme of the metal is shown in fig. 10-12. Depending on the requirements of different powers for heat dissipation and for circuit protection, the processing can be done according to different metallization patterns. The composite solid-state wavelength conversion unit 103 after the graphic metallization is soldered to the first metal pad 1043 and the second metal pad 1044 of the aluminum nitride ceramic substrate 104 by means of metal soldering, and the first metal pad 1043 and the second metal pad 1044 are electrically conducted due to the soldering of the composite solid-state wavelength conversion unit 103. The integrated device 10 is a surface mount device that is integrally soldered to a metal circuit board by a surface mount process. The integrated device 10 is a thermoelectric separation type integrated device because the power of the lighting device is large.
The laser pump source 20 is composed of a blue laser 201 and an optical lens group 202. The blue laser 201 is a single high-power blue laser diode or an array of multiple blue laser diodes. The blue laser 201 is focused and reflected by the optical lens assembly 202 to focus the blue radiation on the surface of the inner wavelength conversion layer 1031 of the composite solid-state wavelength conversion unit 103. Meanwhile, the power supply of the blue laser 201 is provided by the constant current power supply 301 of the power supply system 30, and is connected with the first metal pad 1043 and the second metal pad 1044 of the integrated device 10 through the wire 302 to form a conductive path for supplying power to the blue laser 201.
The details are explained below with reference to specific examples.
In one embodiment, as shown in fig. 1-9, the integrated device 10 includes a blue led chip 101, a single-component solid-state wavelength conversion unit 102, a composite solid-state wavelength conversion unit 103, and a metallized ceramic substrate 104. The top view of the integrated device 10 is shown in fig. 4, 6, and 8, wherein the blue light emitting diode chip 101 is of a flip-chip structure, the size is 1.5 × 1.5mm, the number of the blue light emitting diode chips is two or six, if the number of the blue light emitting diode chips is six, the blue light emitting diode chips are arranged by adopting a 2 × 3 array, welded to the corresponding electrode surface of the aluminum nitride ceramic substrate 104 by using an Au — Sn alloy eutectic process, and connected to a power supply through an anode 1041 and a cathode 1042, and the surface of the blue light emitting diode chip 101 is covered with a fluorescent glue film or a fluorescent ceramic or a fluorescent glass as a single-component solid-. Wherein the composite solid wavelength conversion unit 103 is square, the external dimension is 1.5x1.5mm, and the outer reflective layer 1032 is Al2O3The ceramic material, the inner wavelength conversion layer 1031 is a Ce: YAG ceramic, and has a size of a circle having a diameter of 0.8mm and a number of one or nine (arranged in a 3 × 3 manner). A metal film 1033 is plated on one side of the composite solid-state wavelength conversion unit 103 by a magnetron sputtering method, as shown in fig. 10 to 12, and is soldered to the first metal pad 1043 and the second metal pad 1044 of the aluminum nitride ceramic substrate 104 by a metal soldering technique, so that the first metal pad 1043 and the second metal pad 1044 which are originally not conductive on the metallized ceramic substrate 104 are conductive. FIG. 10 is a pattern of a plating film of the composite solid wavelength converting element 103 and a plating film is applied to the entire back surface, so that the pattern of the plating film is simple but only prevents disconnection of the first metal pad 1043 and the second metal pad 1044 when the entire composite solid wavelength converting element 103 is entirely removed but does not prevent disconnectionThe first metal pad 1043 and the second metal pad 1044 are disconnected when the center wavelength converting material is peeled off alone. It is preferable to perform the coating as shown in fig. 11, so that even if there is a crack between the inner wavelength conversion layer 1031 and the outer reflective layer 1032, the two metal pads 1043 can be disconnected, but since the inner wavelength conversion layer 1031 emits a large amount of heat when receiving the blue laser radiation, the heat dissipation capability of the graph shown in fig. 11 is weak and only suitable for the lower power blue laser radiation. Still preferably, as shown in fig. 12, a thermoelectric separation pattern is adopted, i.e., the first metal pads 1033 are electrically conductive pads, and the second metal pads 1034 are thermally conductive pads, which are respectively soldered to the metallized ceramic substrate 104. While the number of composite solid wavelength converting elements 103 is 1 or 3 (arranged in a 1x3 manner). As shown in fig. 6, the composite solid-state wavelength conversion units 103 are arranged in a 1 × 3 manner, and three pads are connected in series to the first metal pad 1043 and the second metal pad 1044 of the aluminum nitride ceramic substrate 104. Finally, a laser power supply, the first metal pad 1043 and the second metal pad 1044 form a conductive loop, as shown in fig. 13, and the power supply 301 is used to supply power to the laser.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes and modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention.

Claims (7)

1. An all-solid-state high-brightness lighting device is characterized by comprising an integrated device and a laser pumping source, wherein the integrated device comprises a substrate, a blue light emitting diode chip, a single-component solid-state wavelength conversion unit and a composite solid-state wavelength conversion unit, the blue light emitting diode chip and the composite solid-state wavelength conversion unit are both arranged on the surface of the substrate, the single-component solid-state wavelength conversion unit is arranged on the surface of the blue light emitting diode chip, the composite solid-state wavelength conversion unit is arranged between the two single-component solid-state wavelength conversion units, the laser pumping source comprises a blue laser and an optical lens group, and laser emitted by the blue laser enters the composite solid-state wavelength conversion unit directly or after being focused by the optical lens group;
the composite solid-state wavelength conversion unit and the metal electrode form a conductive path, and the conductive path is connected with the blue laser and the power supply in series to form a power supply loop.
2. The all solid state high brightness illumination device of claim 1 wherein said laser pump source further comprises a mirror disposed between the lens assembly and the integrating device.
3. The all-solid-state high-brightness illumination device of claim 1, wherein the number of the blue light emitting diode chips is 2-100.
4. The all-solid-state high-brightness illumination device according to claim 1, wherein the single-component solid-state wavelength conversion unit is one or more of a fluorescent glue film, fluorescent glass or fluorescent ceramic.
5. The all-solid high brightness lighting device of claim 1 wherein said composite solid wavelength converting element is a composite of a center wavelength converting material and an edge-wrapped reflective material.
6. The all-solid-state high-brightness illumination device according to claim 5, wherein the number of the central wavelength conversion materials is 1 to 100, and the central wavelength conversion materials are arranged at the central position of the composite solid-state wavelength conversion unit in an array form; the number of the composite solid wavelength conversion units is 1-100, and the composite solid wavelength conversion units are arranged on the metallized ceramic substrate in an array mode.
7. The all-solid high brightness illumination device according to claim 5 wherein said central wavelength converting material is a rare earth ion doped Y3Al5O12 ceramic material or a single crystal material; the edge-wrapped reflective material is one of alumina, yttria or zirconia.
CN201810683959.8A 2018-06-28 2018-06-28 All-solid-state high-brightness lighting device Active CN108799859B (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102208552A (en) * 2011-05-20 2011-10-05 电子科技大学 White-light organic electroluminescent device and preparation method thereof
CN105627113A (en) * 2016-01-14 2016-06-01 杨阳 High-power LED plant growing lamp unit and plant growing lamp
CN105864647A (en) * 2015-01-30 2016-08-17 Lg伊诺特有限公司 Light-emitting apparatus
CN206449452U (en) * 2016-07-11 2017-08-29 广州市新晶瓷材料科技有限公司 The Stimulated Light of based single crystal excites the light-emitting device for changing into white light
CN107339615A (en) * 2016-04-28 2017-11-10 欧司朗有限公司 For launching the lighting device of illuminating ray
WO2017195620A1 (en) * 2016-05-13 2017-11-16 パナソニックIpマネジメント株式会社 Light source device and lighting device
CN107940257A (en) * 2017-12-21 2018-04-20 超视界激光科技(苏州)有限公司 Illuminating module and laser lighting lamp

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102208552A (en) * 2011-05-20 2011-10-05 电子科技大学 White-light organic electroluminescent device and preparation method thereof
CN105864647A (en) * 2015-01-30 2016-08-17 Lg伊诺特有限公司 Light-emitting apparatus
CN105627113A (en) * 2016-01-14 2016-06-01 杨阳 High-power LED plant growing lamp unit and plant growing lamp
CN107339615A (en) * 2016-04-28 2017-11-10 欧司朗有限公司 For launching the lighting device of illuminating ray
WO2017195620A1 (en) * 2016-05-13 2017-11-16 パナソニックIpマネジメント株式会社 Light source device and lighting device
CN206449452U (en) * 2016-07-11 2017-08-29 广州市新晶瓷材料科技有限公司 The Stimulated Light of based single crystal excites the light-emitting device for changing into white light
CN107940257A (en) * 2017-12-21 2018-04-20 超视界激光科技(苏州)有限公司 Illuminating module and laser lighting lamp

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