CN101533879A - Light-emitting diode (LED) capable of increasing luminescence efficiency - Google Patents
Light-emitting diode (LED) capable of increasing luminescence efficiency Download PDFInfo
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- CN101533879A CN101533879A CN200810084939A CN200810084939A CN101533879A CN 101533879 A CN101533879 A CN 101533879A CN 200810084939 A CN200810084939 A CN 200810084939A CN 200810084939 A CN200810084939 A CN 200810084939A CN 101533879 A CN101533879 A CN 101533879A
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Abstract
The invention relates to a light-emitting diode (LED) which is capable of increasing the luminescence efficiency. The LED comprises an LED wafer and an optical layer that is arranged at the bottom part of the LED wafer; the optical layer can be a light layer, an optical reflection layer or an energy conversion layer so as to increase the luminescence efficiency of the LED; furthermore, a coarsening layer is arranged between the LED wafer and the optical layer so as to increase the surface area of the LED and lead the light beam emitted by the LED wafer to enter the optical layer easily, thus increasing the luminescence efficiency of the LED further.
Description
Technical field:
The invention relates to a kind of light-emitting diode, refer to a kind of light-emitting diode that increases luminous efficiency especially.
Background technology:
Light-emitting diode (Light Emitting DiodeLED) is by the made light-emitting component of semi-conducting material, element has two electrode terminals, between terminal, apply voltage, feed minimum electric current, dump energy can be excited with the form of light via the combination in electronics electricity hole and to disengage, this is the basic principle of luminosity of light-emitting diode.Light-emitting diode is different from general incandescent lamp bulb, light-emitting diode is to belong to chemiluminescence, have that power consumption is low, component life is long, need not warm up advantages such as lamp time and reaction speed be fast, add that its volume is little, vibration resistance, be fit to volume production, demand on the fit applications is made the element of minimum or array easily, light-emitting diode generally is used on the indicating device and display unit of information, communication and consumption electronic products at present, becomes critical elements indispensable in the daily life.
Light-emitting diode is divided into visible light emitting diode (wavelength 450～680nm) and invisible light light-emitting diode (wavelength 850～1550nm) two big classes according to emission wavelength.If the epitaxial layer material with its use can be further divided into binary compound (as GaAs, GaSb, GaN etc.), ternary compound (as AlxGal-xAs, AlxGal-xP, Inl-xGaxAs etc.), quaternary compound (as AlInGaP, InAlGaAs, AlxGal-xAsyPl-y etc.) and GaN based compound four big classes.Distinguish with brightness, light-emitting diode can be divided into high brightness LED and general brightness light-emitting diode two big classes.But, directly weigh light-emitting diode luminosity and there is no the method right area and tell high brightness LED and general brightness light-emitting diode because light-emitting diode has directive property, and each manufacturer's criterion also differs.Add lumination of light emitting diode brightness, luminous efficiency is directly related with the epitaxial layer material, therefore to use the epitaxial layer material category as the standard of distinguishing high brightness LED, high brightness LED is meant that with quaternary compound and the made light-emitting diode of GaN based compound general brightness light-emitting diode is meant with binary compound and the made light-emitting diode of ternary compound beyond the GaN system.
Develop first the commercial light-emitting diode in the whole world from nineteen sixty-eight HP (Hewlett-Packard), improvement along with material and processing procedure, make the light-emitting diode product performance have and reach significantly lifting, pointing out the brightness that light-emitting diode produces according to Haitz ' s law, roughly is to grow up with the track of one times of lifting in every 18-24 month.When brightness was grown up, production unit cost dropped to the price in per ten years and has only 1/10th trend to glide.Under the light-emitting diode value of the product significantly promotes, the application of high brightness LED constantly is developed in recent years, except that be used for outdoor various show to continue to grow up in application market show device and the traffic signal light with the LCD display backlight of light source, portable product beautiful achievement is also arranged at automobile.Analyze global high brightness LED market in 2003, portable product is main application market, and wherein the occupation rate of market with mobile phone is the highest again.Proportion owing to the mobile phone colorize significantly increases in recent years, and camera cell phone device photoflash lamp is tending towards general, demand for high unit price white light emitting diode significantly increases, and makes mobile phone market in 2003 account for rate in the city of high brightness LED and grows to 41%, grows up 3% than 2002.The global high brightness LED market development of looking forward to the future, constantly promote at product performances such as luminous efficiency and brightness, and the regional change of forbidding management environments such as " mercury " chemical substance, the lasting raising of global energy cost of European Union in 2006, high brightness LED is had an opportunity and the conventional lighting sources product produces tangible substitution effect in illumination, automobile and medium-and-large-sized monitor market.It is the sign of human civilization that general lighting market high brightness LED still belongs to niche product illumination, and as basic necessities of life, head asks it should be enough, asks its quality again.Illumination is not enough, and luminosity is not enough, will influence operating efficiency and individual eyesight normal development, and harm is physically and mentally healthy.Therefore the invention provides a kind of light-emitting diode that increases luminous efficiency, to meet the development of light-emitting diode future market.
Summary of the invention:
Main purpose of the present invention is to be to provide a kind of light-emitting diode that increases luminous efficiency, in the bottom of LED wafer optical layers is set, and optical layers such as optical waveguide layer, reflection layer or energy conversion layer are to increase the luminous efficiency of light-emitting diode.。
Secondary objective of the present invention, be to be to provide a kind of light-emitting diode that increases luminous efficiency, in between LED wafer and optical layers, roughened layer is set, to increase the surface area of LED wafer, the light that LED wafer is sent enters optical layers easily, more can increase the luminous efficiency of light-emitting diode.
For realizing the object of the invention to solve the technical problems, the present invention is achieved through the following technical solutions.The present invention provides a kind of light-emitting diode that increases luminous efficiency, this light-emitting diode comprises a LED wafer and an optical layers, this optical layers is located at the bottom of this LED wafer, and this optical layers can be a photosphere, a reflection layer or an energy conversion layer, to increase the luminous efficiency of this light-emitting diode.A roughened layer more is set between this LED wafer and this optical layers in addition, and to increase the surface area of LED wafer, the light that LED wafer is sent enters optical layers easily, more can increase the luminous efficiency of light-emitting diode.
For realizing the object of the invention to solve the technical problems, the present invention also is achieved through the following technical solutions.
The aforesaid light-emitting diode that increases luminous efficiency, wherein more be arranged in the encapsulating structure, wherein this encapsulating structure comprises: a load bearing seat comprises two lead foots, and carry this light-emitting diode, this LED wafer electrically connects with lead and this two lead foot; And a cover body, be covered in this load bearing seat, wherein this cover body more comprises an energy conversion layer.
The aforesaid light-emitting diode that increases luminous efficiency, wherein the minimum thickness of this optical layers is 5um.
The aforesaid light-emitting diode that increases luminous efficiency wherein more comprises: a roughened layer, be located at this LED wafer and this optical layers between, the coarsening rate of this roughened layer is between 0.5nm and 150nm.
The aforesaid light-emitting diode that increases luminous efficiency, wherein this optical layers more is provided with a plurality of thermal conduction path, and those thermal conduction path are inserted Heat Conduction Material more respectively.
The aforesaid light-emitting diode that increases luminous efficiency wherein more comprises: a selective reflecting layer, be located at this LED wafer, and relative with this optical layers, this selective reflecting layer is a Bragg grating.
The aforesaid light-emitting diode that increases luminous efficiency, wherein this optical layers is made by rotary coating, ink-jet, electron gun evaporation, sputter or screen painting.
For realizing the object of the invention to solve the technical problems, the present invention also is achieved through the following technical solutions.The invention provides a kind of light-emitting diode that increases luminous efficiency, it comprises: a LED wafer; And an optical layers, be located at the bottom of this LED wafer, to increase the luminous efficiency of this LED wafer, wherein this optical layers is an energy conversion layer, this optical layers is more extended the side that coats this LED wafer.
The aforesaid light-emitting diode that increases luminous efficiency, wherein this energy conversion layer is made by rotary coating, ink-jet, electron gun evaporation, sputter or screen painting.
The aforesaid light-emitting diode that increases luminous efficiency, wherein more be arranged in the encapsulating structure, wherein this encapsulating structure comprises: a load bearing seat comprises two lead foots, and carry this this light-emitting diode, this LED wafer electrically connects with lead and this two lead foot; And a cover body, be covered in this load bearing seat.
The aforesaid light-emitting diode that increases luminous efficiency, wherein the minimum thickness of this optical layers is 5um.
The aforesaid light-emitting diode that increases luminous efficiency wherein more comprises: a roughened layer, be located at this LED wafer and this optical layers between, the coarsening rate of this roughened layer is between 0.5nm and 150nm.
The aforesaid light-emitting diode that increases luminous efficiency, wherein this energy conversion layer more is provided with a plurality of thermal conduction path, and those thermal conduction path are inserted Heat Conduction Material more respectively.
The aforesaid light-emitting diode that increases luminous efficiency wherein more comprises: a selective reflecting layer, be located at this LED wafer, and relative with this optical layers, this selective reflecting layer is a Bragg grating.
Compared with former technology, the invention has the beneficial effects as follows: a kind of light-emitting diode that increases luminous efficiency is provided, bottom in LED wafer is provided with optical layers, optical layers such as optical waveguide layer, reflection layer or energy conversion layer, to increase the luminous efficiency of light-emitting diode, more between LED wafer and optical layers, roughened layer is set, to increase the surface area of LED wafer, the light that LED wafer is sent enters optical layers easily, more can increase the luminous efficiency of light-emitting diode.Light-emitting diode more is provided with energy conversion layer in addition, the optical wavelength of being sent with the conversion light emitting diode wafer, more a plurality of thermal conduction path are set in energy conversion layer or optical layers, with the conduction heat energy that LED wafer was produced, more Heat Conduction Material is set respectively in those thermal conduction path, promote the heat-conducting effect of light-emitting diode, perhaps heat dissipating layer is set in optical layers or energy conversion layer bottom, to promote the radiating effect of light-emitting diode, yet also can selective reflecting layer be set in the LED wafer top, can select specific optical wavelength by or be reflected, light conversion effect with effective lifting light-emitting diode, take a broad view of above-mentionedly, the invention provides a kind of light-emitting diode that increases luminous efficiency.
Description of drawings:
Fig. 1 is the light-emitting diode schematic diagram of a preferred embodiment of the present invention;
Fig. 2 is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Fig. 3 A is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Fig. 3 B is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Fig. 4 A is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Fig. 4 B is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Fig. 5 is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Fig. 6 is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Fig. 7 is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Fig. 8 is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Fig. 9 is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Figure 10 is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Figure 11 is the light-emitting diode schematic diagram of another preferred embodiment of the present invention;
Figure 12 is the light-emitting diode schematic diagram of another preferred embodiment of the present invention
Figure 13 is the encapsulating structure schematic diagram of the light-emitting diode of another preferred embodiment of the present invention.
The figure number explanation:
1 light-emitting diode, 10 LED wafer
12 optical layers, 121 thermal conduction path
14 roughened layers, 16 energy conversion layers
161 thermal conduction path, 18 heat dissipating layers
19 selective reflecting layers, 2 encapsulating structures
21 load bearing seats, 211 lead foots
22 cover bodies, 23 energy conversion layers
24 leads
Embodiment:
Further understand and understanding for the juror is had architectural feature of the present invention and the effect reached, sincerely help with preferred embodiment and cooperate detailed explanation, illustrate as after:
Seeing also Fig. 1, is the light-emitting diode schematic diagram of a preferred embodiment of the present invention.As shown in the figure, the invention provides a kind of light-emitting diode that increases luminous efficiency, this light-emitting diode 1 comprises a LED wafer 10 and an optical layers 12, this optical layers 12 is located at the bottom of this LED wafer 1, this optical layers 12 will increase the luminous efficiency of this LED wafer 1, wherein this optical layers 12 is to can be an optical waveguide layer, a reflection layer or an energy conversion layer, and wherein the minimum thickness of this optical layers 12 is 5um.Seeing also Fig. 2, is the light-emitting diode schematic diagram of another preferred embodiment of the present invention.As shown in the figure, light-emitting diode 1 of the present invention more comprises a roughened layer 14, this roughened layer 14 is located between this LED wafer 10 and this optical layers 12, the coarsening rate of this roughened layer 14 is between 0.5nm and 150nm, so can effectively increase the surface area of this light-emitting diode 1, promoting radiating effect, and the light that reduces this LED wafer 10 produces the phenomenon of total reflection, and make this light enter this optical layers 12 easily, and then increase luminous efficiency.
Seeing also Fig. 3 A and Fig. 3 B, is the light-emitting diode schematic diagram of another preferred embodiment of the present invention and the light-emitting diode schematic diagram of another preferred embodiment of the present invention.As shown in the figure, present embodiment provides a kind of light-emitting diode that increases luminous efficiency, this light-emitting diode 1 is to comprise a LED wafer 10 and an optical layers 12, this optical layers 12 is located at the bottom of this LED wafer 10, wherein this optical layers 12 is optical waveguide layers, and this light-emitting diode 1 more comprises an energy conversion layer 16, this energy conversion layer 16 is located between this LED wafer 10 and this optical layers 12, perhaps be located at this optical layers 12, and it is relative with this LED wafer 10, the optical wavelength that these energy conversion layer 16 convertible these LED wafer 10 are sent, and can guide the direction of the light of changing through energy conversion layer 16 as this optical layers 12 of this optical waveguide layer, to increase the luminous efficiency of this light-emitting diode 1.
Seeing also Fig. 4 A Fig. 4 B, is the light-emitting diode schematic diagram of another preferred embodiment of the present invention and the light-emitting diode schematic diagram of another preferred embodiment of the present invention.As shown in the figure, present embodiment provides a kind of light-emitting diode that increases luminous efficiency, different being of embodiment of present embodiment and Fig. 3 A and Fig. 3 B, between this LED wafer 10 and this energy conversion layer 16, be provided with a roughened layer 14 (as Fig. 4 A), perhaps between this LED wafer 10 and this optical layers 12, be provided with this roughened layer 14 (as Fig. 4 B), wherein the coarsening rate of this roughened layer 14 is between 0.5nm and 150nm, so more can promote the luminous efficiency of this light-emitting diode 1.
Seeing also Fig. 5, is the light-emitting diode schematic diagram of another preferred embodiment of the present invention.As shown in the figure, present embodiment provides a kind of light-emitting diode that increases luminous efficiency, present embodiment improvement Fig. 4 B embodiment, this energy conversion layer 16 extends the side that coats this LED wafer 10, this LED wafer 10 sees through as this optical layers 12 of this optical waveguide layer and guides the radiation direction that these light-emitting diodes body wafers 10 are sent, and this energy conversion layer 16 coats the side of this LED wafer 10, to promote the light conversion efficiency of this light-emitting diode 1.
Seeing also Fig. 6, is the light-emitting diode schematic diagram of another preferred embodiment of the present invention.As shown in the figure, present embodiment provides a kind of light-emitting diode that increases luminous efficiency, present embodiment is different with Fig. 5 to be, this energy conversion layer 16 is provided with a plurality of thermal conduction path 161, be respectively equipped with the Heat Conduction Material (not shown) in those a plurality of thermal conduction path 161, perhaps be provided with a heat dissipating layer 18 in the bottom of this energy conversion layer 16, the heat energy that this LED wafer 10 is produced conducts to this heat dissipating layer 18 through those thermal conduction path 161 and dispels the heat, and so promotes the radiating efficiency of this light-emitting diode 1.Present embodiment also can be applicable to Fig. 5 embodiment.
Seeing also Fig. 7, is the light-emitting diode schematic diagram of another preferred embodiment of the present invention.As shown in the figure, present embodiment provides a kind of light-emitting diode that increases luminous efficiency, this light-emitting diode 1 is to comprise a LED wafer 10, an optical layers 12 and an energy conversion layer 16, this optical layers 12 is located at the bottom of this LED wafer 10, this optical layers 12 is reflection layers, so this energy conversion layer 16 is located between this optical layers and this LED wafer 10, the optical wavelength that these energy conversion layer 16 convertible these LED wafer 10 are sent, and can reflect direction through the light of energy conversion layer 16 conversions as this optical layers 12 of this reflection layer, to increase the luminous efficiency of this light-emitting diode 1.
Seeing also Fig. 8, is the light-emitting diode schematic diagram of another preferred embodiment of the present invention.As shown in the figure, present embodiment provides a kind of light-emitting diode that increases luminous efficiency, different being of embodiment of present embodiment and Fig. 7, between this LED wafer 10 and this energy conversion layer 16, be provided with a roughened layer 14, the coarsening rate of this roughened layer 14 is between 0.5nm and 150nm, can increase the surface area of this LED wafer 10 because of this roughened layer 14, the light that this LED wafer 10 is sent enters this energy conversion layer 16 easily, to promote the light conversion efficiency of this light-emitting diode 1, and will reflect away through the light of this energy conversion layer 16 conversions through this optical layers 12, so more can promote the luminous efficiency of this light-emitting diode 1.
Seeing also Fig. 9, is the light-emitting diode schematic diagram of another preferred embodiment of the present invention.As shown in the figure, present embodiment provides a kind of light-emitting diode that increases luminous efficiency, present embodiment is different with Fig. 8 embodiment to be, this optical layers 12 is a reflection layer, the material of this reflection layer is selected high reflection Heat Conduction Material, be provided with a plurality of thermal conduction path 161 in this energy conversion layer 16 then, the heat energy that this LED wafer 10 is produced reaches this reflection layer through those thermal conduction path 161 and dispels the heat, and the light that these energy conversion layer 16 these LED wafer 10 of conversion are sent, this reflection layer also can reflect the light through conversion, so makes this light-emitting diode 10 reach the effect of heat radiation and high-luminous-efficiency.
Seeing also Figure 10, is the light-emitting diode schematic diagram of another preferred embodiment of the present invention.As shown in the figure, present embodiment provides a kind of light-emitting diode that increases luminous efficiency, this light-emitting diode 1 is to comprise a LED wafer 10, a roughened layer 14 and an optical layers 12, this optical layers 12 is located at the bottom of this LED wafer 10, this optical layers 12 is energy conversion layers, this optical layers 12 is by rotary coating, ink-jet, the electron gun evaporation, sputter or screen painting are made, this roughened layer 14 is located between this optical layers 12 and this LED wafer 10, the coarsening rate of this roughened layer 14 is between 0.5nm and 150nm, this roughened layer 14 increases the surface area of this LED wafer 10, and the light that this LED wafer 10 is sent enters this optical layers 12 easily and carries out light conversion, effectively promotes the light conversion efficiency and the luminous efficiency of this light-emitting diode 1.This this LED wafer 10 of optical layers 12 more extensible coatings is to promote the light conversion efficiency of this light-emitting diode 1.
Seeing also Figure 11, is the light-emitting diode schematic diagram of another preferred embodiment of the present invention.As shown in the figure, present embodiment provides a kind of light-emitting diode that increases luminous efficiency, present embodiment is different with Figure 10 embodiment to be, this optical layers 12 is provided with a plurality of thermal conduction path 121, the heat energy that this LED wafer 10 is produced spreads out of via those thermal conduction path 121, those thermal conduction path 121 can be provided with the Heat Conduction Material (not shown) respectively, perhaps this optical layers 12 is provided with a heat dissipating layer 18, this heat dissipating layer 18 is relative with this LED wafer 10, the heat energy that this LED wafer 10 is produced reaches this heat dissipating layer 18 via those thermal conduction path 121 and dispels the heat, to promote the radiating efficiency of this light-emitting diode 1.
Seeing also Figure 12, is the light-emitting diode schematic diagram of another preferred embodiment of the present invention.As shown in the figure, present embodiment provides a kind of light-emitting diode that increases luminous efficiency, present embodiment is different with Figure 11 embodiment to be, this optical layers 12 is extended this LED wafer 10 of coating, and a selective reflecting layer 19 is set in this LED wafer 10, this selective reflecting layer 19 is a Bragg grating, can allow specific wavelength light by or be reflected, the light that this LED wafer 10 like this is sent reflexes to this optical layers 12 through this selective reflecting layer 19 and carries out the light conversion, light through changing will reach this selective reflecting layer 19 and launch, promoting the light conversion efficiency of this light-emitting diode 1, and then promote the luminous efficiency of this light-emitting diode 1.The selective reflecting layer 19 of present embodiment can be applicable in above-mentioned this light-emitting diode 1 with this energy conversion layer.
Seeing also Figure 13, is the encapsulating structure schematic diagram of the light-emitting diode of another preferred embodiment of the present invention.As shown in the figure, the light-emitting diode that above-mentioned Fig. 1 provided more can be arranged in the encapsulating structure 2, this encapsulating structure 2 comprises a load bearing seat 21 and a cover body 22, this load bearing seat 21 is these light-emitting diodes 1 of carrying, and this load bearing seat 21 comprises two lead foots 211, this cover body 22 is covered in this load bearing seat 21, this LED wafer 10 electrically connects with lead 24 this two lead foot 211 with this load bearing seat 21, more can in this cover body 22, be provided with an energy conversion layer 23 in addition, to change the optical wavelength that this light-emitting diode 1 is sent.Be the light-emitting diode that the foregoing description provided and the light-emitting diode 1 of present embodiment is replaceable, repeat no more in this.
The above, it only is a preferred embodiment of the present invention, be not to be used for limiting scope of the invention process, all equalizations of doing according to the described shape of claim scope of the present invention, structure, feature and spirit change and modify, and all should be included in the claim scope of the present invention.
Claims (14)
1, a kind of light-emitting diode that increases luminous efficiency is characterized in that it comprises:
A LED wafer; And
An optical layers is located at the bottom of this LED wafer, and to increase the luminous efficiency of this LED wafer, wherein this optical layers is to select one in an optical waveguide layer, a reflection layer and an energy conversion layer.
2, the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that, more is arranged in the encapsulating structure, and wherein this encapsulating structure comprises:
A load bearing seat comprises two lead foots, and carries this light-emitting diode, and this LED wafer electrically connects with lead and this two lead foot; And
A cover body is covered in this load bearing seat, and wherein this cover body more comprises an energy conversion layer.
3, the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that, the minimum thickness of this optical layers is 5um.
4, the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that, more comprises: a roughened layer, be located at this LED wafer and this optical layers between, the coarsening rate of this roughened layer is between 0.5nm and 150nm.
5, the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that, this optical layers more is provided with a plurality of thermal conduction path, and those thermal conduction path are inserted Heat Conduction Material more respectively.
6, the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that, more comprises: a selective reflecting layer, be located at this LED wafer, and relative with this optical layers, this selective reflecting layer is a Bragg grating.
7, the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that, this optical layers is made by rotary coating, ink-jet, electron gun evaporation, sputter or screen painting.
8, a kind of light-emitting diode that increases luminous efficiency is characterized in that it comprises:
A LED wafer; And
An optical layers is located at the bottom of this LED wafer, and to increase the luminous efficiency of this LED wafer, wherein this optical layers is an energy conversion layer, and this optical layers is more extended the side that coats this LED wafer.
9, the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that, this energy conversion layer is made by rotary coating, ink-jet, electron gun evaporation, sputter or screen painting.
10, the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that, more is arranged in the encapsulating structure, and wherein this encapsulating structure comprises:
A load bearing seat comprises two lead foots, and carries this this light-emitting diode, and this LED wafer electrically connects with lead and this two lead foot; And
A cover body is covered in this load bearing seat.
11, the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that, the minimum thickness of this optical layers is 5um.
12, the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that, more comprises: a roughened layer, be located at this LED wafer and this optical layers between, the coarsening rate of this roughened layer is between 0.5nm and 150nm.
13, the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that, this energy conversion layer more is provided with a plurality of thermal conduction path, and those thermal conduction path are inserted Heat Conduction Material more respectively.
14, the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that, more comprises: a selective reflecting layer, be located at this LED wafer, and relative with this optical layers, this selective reflecting layer is a Bragg grating.
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| CN2008100849395A CN101533879B (en) | 2008-03-10 | 2008-03-10 | Light-emitting diode (LED) capable of increasing luminescence efficiency |
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| CN2008100849395A CN101533879B (en) | 2008-03-10 | 2008-03-10 | Light-emitting diode (LED) capable of increasing luminescence efficiency |
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| CN101533879A true CN101533879A (en) | 2009-09-16 |
| CN101533879B CN101533879B (en) | 2012-08-22 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859842A (en) * | 2009-04-07 | 2010-10-13 | 璨扬投资有限公司 | Light emitting diode for increasing luminous efficiency |
| CN101740706B (en) * | 2009-12-14 | 2013-02-06 | 深圳雷曼光电科技股份有限公司 | High-brightness white-light LED and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2907286B1 (en) * | 1998-06-26 | 1999-06-21 | サンケン電気株式会社 | Resin-sealed semiconductor light emitting device having fluorescent cover |
| CN1812141A (en) * | 2005-01-27 | 2006-08-02 | 先进开发光电股份有限公司 | White light luminous diode package and preparative method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859842A (en) * | 2009-04-07 | 2010-10-13 | 璨扬投资有限公司 | Light emitting diode for increasing luminous efficiency |
| CN101740706B (en) * | 2009-12-14 | 2013-02-06 | 深圳雷曼光电科技股份有限公司 | High-brightness white-light LED and manufacturing method thereof |
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| CN101533879B (en) | 2012-08-22 |
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Effective date of registration: 20161031 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: China Longtan Taiwan Taoyuan County Rural Science and Technology Park Longtan Dragon Garden Road No. 99 Patentee before: Formosa Epitaxy Incorporation |