CN101533879B - Light-emitting diode (LED) capable of increasing luminescence efficiency - Google Patents
Light-emitting diode (LED) capable of increasing luminescence efficiency Download PDFInfo
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- CN101533879B CN101533879B CN2008100849395A CN200810084939A CN101533879B CN 101533879 B CN101533879 B CN 101533879B CN 2008100849395 A CN2008100849395 A CN 2008100849395A CN 200810084939 A CN200810084939 A CN 200810084939A CN 101533879 B CN101533879 B CN 101533879B
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Abstract
The invention relates to a light-emitting diode (LED) which is capable of increasing the luminescence efficiency. The LED comprises an LED wafer and an optical layer that is arranged at the bottom part of the LED wafer; the optical layer can be a light layer, an optical reflection layer or an energy conversion layer so as to increase the luminescence efficiency of the LED; furthermore, a coarsening layer is arranged between the LED wafer and the optical layer so as to increase the surface area of the LED and lead the light beam emitted by the LED wafer to enter the optical layer easily, thus increasing the luminescence efficiency of the LED further.
Description
Technical field:
The invention relates to a kind of light-emitting diode, refer to a kind of light-emitting diode that increases luminous efficiency especially.
Background technology:
Light-emitting diode (Light Emitting DiodeLED) is by the made luminescence component of semi-conducting material; Assembly has two electrode terminals; Between terminal, apply voltage; Feed minimum electric current, can dump energy be excited with the form of light via the combination in electronics electricity hole and disengage, this is the basic principle of luminosity of light-emitting diode.Light-emitting diode is different from general incandescent lamp bulb; Light-emitting diode is to belong to chemiluminescence; Have that power consumption is low, assembly life-span is long, need not warm up advantages such as lamp time and reaction speed be fast, adds that its volume is little, vibration resistance, is fit to volume production, the demand on the fit applications is processed the assembly of minimum or array easily; Light-emitting diode generally is used on the indicating device and display unit of information, communication and consumption electronic products at present, becomes significant components indispensable in the daily life.
Light-emitting diode is divided into visible light emitting diode (wavelength 450～680nm) and invisible light light-emitting diode (850～1550nm) two big types of wavelength according to emission wavelength.If the epitaxial layer material with its use can further be divided into binary compound (like GaAs, GaSb, GaN etc.), ternary compound (like AlxGa1-xAs, AlxGa1-xP, In1-xGaxAs etc.), quaternary compound (like AlInGaP, InAlGaAs, AlxGa1-xAsyP1-y etc.) and GaN based compound four big classes.Distinguish with brightness, light-emitting diode can be divided into high brightness LED and general brightness light-emitting diode two big classes.But, directly weigh light-emitting diode luminance and can't tell high brightness LED and general brightness light-emitting diode by right area because light-emitting diode has directive property, and each manufacturer's criterion also differs.Add lumination of light emitting diode brightness, luminous efficiency is directly related with the epitaxial layer material; Therefore to use the epitaxial layer material category as the standard of distinguishing high brightness LED; High brightness LED is meant that with quaternary compound and the made light-emitting diode of GaN based compound general brightness light-emitting diode is meant with binary compound and the made light-emitting diode of ternary compound beyond the GaN system.
Develop first the commercial light-emitting diode in the whole world from nineteen sixty-eight HP (Hewlett-Packard); Improvement along with material and processing procedure; Make the light-emitting diode product performance have and reach significantly lifting; Pointing out the brightness that light-emitting diode produces according to Haitz ' s law, roughly is to grow up with the track of one times of lifting in every 18-24 month.When brightness was grown up, production unit cost dropped to the price in per ten years and has only 1/10th trend to glide.Significantly promote down in the light-emitting diode value of the product; The application of high brightness LED is constantly developed in recent years; Except that be used for outdoor various show to continue to grow up in application market show device and the traffic signal light with the LCD display backlight of light source, portable product beautiful achievement is also arranged at automobile.Analyze global high brightness LED market in 2003, portable product is main application market, and wherein the occupation rate of market with mobile phone is the highest again.Proportion owing to the mobile phone colorize significantly increases in recent years; And camera cell phone device photoflash lamp is tending towards general; Demand for high unit price white light emitting diode significantly increases, and makes mobile phone market in 2003 account for rate in the city of high brightness LED and grows to 41%, grows up 3% than 2002.The global high brightness LED market development of looking forward to the future; Constantly promote at product performances such as luminous efficiency and brightness; And the regional change of forbidding management environments such as " mercury " chemical substance, the lasting raising of global energy cost of European Union in 2006; High brightness LED is had an opportunity and the conventional lighting sources product produces tangible substitution effect in illumination, automobile and medium-and-large-sized monitor market.It is the sign of human civilization that general lighting market high brightness LED still belongs to niche product illumination, and as basic necessities of life, head asks it should be enough, asks its quality again.Illumination is not enough, and brightness is not enough, will influence operating efficiency and individual eyesight normal development, and harm is physically and mentally healthy.Therefore the present invention provides a kind of light-emitting diode that increases luminous efficiency, to meet the development of light-emitting diode future market.
Summary of the invention:
Main purpose of the present invention is to be to provide a kind of light-emitting diode that increases luminous efficiency, in the bottom of light-emitting diode chip for backlight unit optical layers is set, and optical layers such as optical waveguide layer, reflection layer or energy conversion layer are to increase the luminous efficiency of light-emitting diode.。
Secondary objective of the present invention; Be to be to provide a kind of light-emitting diode that increases luminous efficiency; In between light-emitting diode chip for backlight unit and optical layers, roughened layer is set; To increase the surface area of light-emitting diode chip for backlight unit, the light that light-emitting diode chip for backlight unit is sent gets into optical layers easily, more can increase the luminous efficiency of light-emitting diode.
For realizing the object of the invention and solve its technical problem that the present invention realizes through following technical scheme.The present invention provides a kind of light-emitting diode that increases luminous efficiency; This light-emitting diode comprises a light-emitting diode chip for backlight unit and an optical layers; This optical layers is located at the bottom of this light-emitting diode chip for backlight unit; And this optical layers can be a photosphere, a reflection layer or an energy conversion layer, to increase the luminous efficiency of this light-emitting diode.A roughened layer more is set between this light-emitting diode chip for backlight unit and this optical layers in addition, and to increase the surface area of light-emitting diode chip for backlight unit, the light that light-emitting diode chip for backlight unit is sent gets into optical layers easily, more can increase the luminous efficiency of light-emitting diode.
For realizing the object of the invention and solve its technical problem that the present invention also realizes through following technical scheme.
The aforesaid light-emitting diode that increases luminous efficiency; Wherein more be arranged in the encapsulating structure, wherein this encapsulating structure comprises: a load bearing seat comprises two lead foots; And carrying this light-emitting diode, this light-emitting diode chip for backlight unit electrically connects with lead and this two lead foot; And a cover body, be covered in this load bearing seat, wherein this cover body more comprises an energy conversion layer.
The aforesaid light-emitting diode that increases luminous efficiency, wherein the minimum thickness of this optical layers is 5um.
The aforesaid light-emitting diode that increases luminous efficiency wherein more comprises: a roughened layer, be located at this light-emitting diode chip for backlight unit and this optical layers between, the center line average roughness of this roughened layer is between 0.5nm and 150nm.
The aforesaid light-emitting diode that increases luminous efficiency, wherein this optical layers more is provided with a plurality of thermal conduction path, and those thermal conduction path are inserted Heat Conduction Material more respectively.
The aforesaid light-emitting diode that increases luminous efficiency wherein more comprises: a selective reflecting layer, be located at this light-emitting diode chip for backlight unit, and relative with this optical layers, this selective reflecting layer is a Bragg grating.
The aforesaid light-emitting diode that increases luminous efficiency, wherein this optical layers is made by rotary coating, ink-jet, electron gun vapor deposition, sputter or screen painting.
For realizing the object of the invention and solve its technical problem that the present invention also realizes through following technical scheme.The present invention provides a kind of light-emitting diode that increases luminous efficiency, and it comprises: a light-emitting diode chip for backlight unit; And an optical layers, be located at the bottom of this light-emitting diode chip for backlight unit, to increase the luminous efficiency of this light-emitting diode chip for backlight unit, wherein this optical layers is an energy conversion layer, this optical layers is more extended the side that coats this light-emitting diode chip for backlight unit.
The aforesaid light-emitting diode that increases luminous efficiency, wherein this energy conversion layer is made by rotary coating, ink-jet, electron gun vapor deposition, sputter or screen painting.
The aforesaid light-emitting diode that increases luminous efficiency; Wherein more be arranged in the encapsulating structure, wherein this encapsulating structure comprises: a load bearing seat comprises two lead foots; And carrying this this light-emitting diode, this light-emitting diode chip for backlight unit electrically connects with lead and this two lead foot; And a cover body, be covered in this load bearing seat.
The aforesaid light-emitting diode that increases luminous efficiency, wherein the minimum thickness of this optical layers is 5um.
The aforesaid light-emitting diode that increases luminous efficiency wherein more comprises: a roughened layer, be located at this light-emitting diode chip for backlight unit and this optical layers between, the center line average roughness of this roughened layer is between 0.5nm and 150nm.
The aforesaid light-emitting diode that increases luminous efficiency, wherein this energy conversion layer more is provided with a plurality of thermal conduction path, and those thermal conduction path are inserted Heat Conduction Material more respectively.
The aforesaid light-emitting diode that increases luminous efficiency wherein more comprises: a selective reflecting layer, be located at this light-emitting diode chip for backlight unit, and relative with this optical layers, this selective reflecting layer is a Bragg grating.
With former compared with techniques; The invention has the beneficial effects as follows: a kind of light-emitting diode that increases luminous efficiency is provided; Bottom in light-emitting diode chip for backlight unit is provided with optical layers, and optical layers such as optical waveguide layer, reflection layer or energy conversion layer are to increase the luminous efficiency of light-emitting diode; More between light-emitting diode chip for backlight unit and optical layers, roughened layer is set; To increase the surface area of light-emitting diode chip for backlight unit, the light that light-emitting diode chip for backlight unit is sent gets into optical layers easily, more can increase the luminous efficiency of light-emitting diode.Light-emitting diode more is provided with energy conversion layer in addition, and the optical wavelength so that the conversion light emitting diode chip is sent more is provided with a plurality of thermal conduction path in energy conversion layer or optical layers; With the conduction heat energy that light-emitting diode chip for backlight unit was produced; More Heat Conduction Material is set respectively, promotes the heat-conducting effect of light-emitting diode, perhaps heat dissipating layer is set in optical layers or energy conversion layer bottom in those thermal conduction path; To promote the radiating effect of light-emitting diode; Yet also can selective reflecting layer be set in the light-emitting diode chip for backlight unit top, can select specific optical wavelength through or be reflected, with the light conversion effect of effective lifting light-emitting diode; Take a broad view of above-mentionedly, the present invention provides a kind of light-emitting diode that increases luminous efficiency.
Description of drawings:
Fig. 1 is the light-emitting diode sketch map of a preferred embodiment of the present invention;
Fig. 2 is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Fig. 3 A is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Fig. 3 B is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Fig. 4 A is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Fig. 4 B is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Fig. 5 is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Fig. 6 is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Fig. 7 is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Fig. 8 is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Fig. 9 is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Figure 10 is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Figure 11 is the light-emitting diode sketch map of another preferred embodiment of the present invention;
Figure 12 is the light-emitting diode sketch map of another preferred embodiment of the present invention
Figure 13 is the encapsulating structure sketch map of the light-emitting diode of another preferred embodiment of the present invention.
The figure number explanation:
1 light-emitting diode, 10 light-emitting diode chip for backlight unit
12 optical layers, 121 thermal conduction path
14 roughened layers, 16 energy conversion layers
161 thermal conduction path, 18 heat dissipating layers
19 selective reflecting layers, 2 encapsulating structures
21 load bearing seats, 211 lead foots
22 cover bodies, 23 energy conversion layers
24 leads
Embodiment:
For making the juror further understanding and understanding arranged to architectural feature of the present invention and the effect reached, sincerely help with preferred embodiment and cooperate detailed explanation, explain as the back:
Seeing also Fig. 1, is the light-emitting diode sketch map of a preferred embodiment of the present invention.As shown in the figure; The present invention provides a kind of light-emitting diode that increases luminous efficiency; This light-emitting diode 1 comprises a light-emitting diode chip for backlight unit 10 and an optical layers 12, and this optical layers 12 is located at the bottom of this light-emitting diode chip for backlight unit 1, and this optical layers 12 will increase the luminous efficiency of this light-emitting diode chip for backlight unit 1; Wherein this optical layers 12 is to can be an optical waveguide layer, a reflection layer or an energy conversion layer, and wherein the minimum thickness of this optical layers 12 is 5um.Please consulting Fig. 2 in the lump, is the light-emitting diode sketch map of another preferred embodiment of the present invention.As shown in the figure, light-emitting diode 1 of the present invention more comprises a roughened layer 14, and this roughened layer 14 is located between this light-emitting diode chip for backlight unit 10 and this optical layers 12; The center line average roughness of this roughened layer 14 is between 0.5nm and 150nm; So can effectively increase the surface area of this light-emitting diode 1, promoting radiating effect, and the light that reduces this light-emitting diode chip for backlight unit 10 produces the phenomenon of total reflection; And make this light get into this optical layers 12 easily, and then increase luminous efficiency.
Seeing also Fig. 3 A and Fig. 3 B, is the light-emitting diode sketch map of another preferred embodiment of the present invention and the light-emitting diode sketch map of another preferred embodiment of the present invention.As shown in the figure; Present embodiment provides a kind of light-emitting diode that increases luminous efficiency, and this light-emitting diode 1 is to comprise a light-emitting diode chip for backlight unit 10 and an optical layers 12, and this optical layers 12 is located at the bottom of this light-emitting diode chip for backlight unit 10; Wherein this optical layers 12 is optical waveguide layers; And this light-emitting diode 1 more comprises an energy conversion layer 16, and this energy conversion layer 16 is located between this light-emitting diode chip for backlight unit 10 and this optical layers 12, perhaps is located at this optical layers 12; And it is relative with this light-emitting diode chip for backlight unit 10; The optical wavelength that these energy conversion layer 16 convertible these light-emitting diode chip for backlight unit 10 are sent, and can guide direction through the light of energy conversion layer 16 conversions as this optical layers 12 of this optical waveguide layer, to increase the luminous efficiency of this light-emitting diode 1.
Please consulting Fig. 4 A Fig. 4 B in the lump, is the light-emitting diode sketch map of another preferred embodiment of the present invention and the light-emitting diode sketch map of another preferred embodiment of the present invention.As shown in the figure; Present embodiment provides a kind of light-emitting diode that increases luminous efficiency; Different being of embodiment of present embodiment and Fig. 3 A and Fig. 3 B; Between this light-emitting diode chip for backlight unit 10 and this energy conversion layer 16, be provided with a roughened layer 14 (like Fig. 4 A); Perhaps between this light-emitting diode chip for backlight unit 10 and this optical layers 12, be provided with this roughened layer 14 (like Fig. 4 B), wherein the center line average roughness of this roughened layer 14 is between 0.5nm and 150nm, so more can promote the luminous efficiency of this light-emitting diode 1.
Seeing also Fig. 5, is the light-emitting diode sketch map of another preferred embodiment of the present invention.As shown in the figure; Present embodiment provides a kind of light-emitting diode that increases luminous efficiency; Present embodiment improvement Fig. 4 B embodiment, this energy conversion layer 16 extends the side that coats this light-emitting diode chip for backlight unit 10, and this light-emitting diode chip for backlight unit 10 sees through as this optical layers 12 of this optical waveguide layer and guides the radiation direction that these light-emitting diodes body chips 10 are sent; And this energy conversion layer 16 coats the side of this light-emitting diode chip for backlight unit 10, to promote the light conversion efficiency of this light-emitting diode 1.
Seeing also Fig. 6, is the light-emitting diode sketch map of another preferred embodiment of the present invention.As shown in the figure; Present embodiment provides a kind of light-emitting diode that increases luminous efficiency; Present embodiment is different with Fig. 5 to be; This energy conversion layer 16 is provided with a plurality of thermal conduction path 161, is respectively equipped with the Heat Conduction Material (not shown) in those a plurality of thermal conduction path 161, perhaps is provided with a heat dissipating layer 18 in the bottom of this energy conversion layer 16; The heat energy that this light-emitting diode chip for backlight unit 10 is produced conducts to this heat dissipating layer 18 through those thermal conduction path 161 and dispels the heat, and so promotes the radiating efficiency of this light-emitting diode 1.Present embodiment also can be applicable to Fig. 5 embodiment.
Seeing also Fig. 7, is the light-emitting diode sketch map of another preferred embodiment of the present invention.As shown in the figure; Present embodiment provides a kind of light-emitting diode that increases luminous efficiency; This light-emitting diode 1 is to comprise a light-emitting diode chip for backlight unit 10, an optical layers 12 and an energy conversion layer 16, and this optical layers 12 is located at the bottom of this light-emitting diode chip for backlight unit 10, and this optical layers 12 is reflection layers; So this energy conversion layer 16 is located between this optical layers and this light-emitting diode chip for backlight unit 10; The optical wavelength that these energy conversion layer 16 convertible these light-emitting diode chip for backlight unit 10 are sent, and can reflect direction through the light of energy conversion layer 16 conversions as this optical layers 12 of this reflection layer, to increase the luminous efficiency of this light-emitting diode 1.
Please consulting Fig. 8 in the lump, is the light-emitting diode sketch map of another preferred embodiment of the present invention.As shown in the figure; Present embodiment provides a kind of light-emitting diode that increases luminous efficiency; Different being of embodiment of present embodiment and Fig. 7; Between this light-emitting diode chip for backlight unit 10 and this energy conversion layer 16, be provided with a roughened layer 14, the center line average roughness of this roughened layer 14 is between 0.5nm and 150nm, can increase the surface area of this light-emitting diode chip for backlight unit 10 because of this roughened layer 14; The light that this light-emitting diode chip for backlight unit 10 is sent gets into this energy conversion layer 16 easily; Promoting the light conversion efficiency of this light-emitting diode 1, and will reflect away through the light of these energy conversion layer 16 conversions, so more can promote the luminous efficiency of this light-emitting diode 1 through this optical layers 12.
Seeing also Fig. 9, is the light-emitting diode sketch map of another preferred embodiment of the present invention.As shown in the figure; Present embodiment provides a kind of light-emitting diode that increases luminous efficiency, and present embodiment is different with Fig. 8 embodiment to be, this optical layers 12 is a reflection layer; The material of this reflection layer is selected high reflection Heat Conduction Material; Be provided with a plurality of thermal conduction path 161 in this energy conversion layer 16 then, the heat energy that this light-emitting diode chip for backlight unit 10 is produced reaches this reflection layer through those thermal conduction path 161 and dispels the heat, and the light that these energy conversion layer 16 these light-emitting diode chip for backlight unit 10 of conversion are sent; This reflection layer also can reflect the light through conversion, so makes this light-emitting diode 10 reach the effect of heat radiation and high-luminous-efficiency.
Seeing also Figure 10, is the light-emitting diode sketch map of another preferred embodiment of the present invention.As shown in the figure; Present embodiment provides a kind of light-emitting diode that increases luminous efficiency; This light-emitting diode 1 is to comprise a light-emitting diode chip for backlight unit 10, a roughened layer 14 and an optical layers 12; This optical layers 12 is located at the bottom of this light-emitting diode chip for backlight unit 10; This optical layers 12 is energy conversion layers, and this optical layers 12 is to be made by rotary coating, ink-jet, electron gun vapor deposition, sputter or screen painting, and this roughened layer 14 is located between this optical layers 12 and this light-emitting diode chip for backlight unit 10; The center line average roughness of this roughened layer 14 is between 0.5nm and 150nm; This roughened layer 14 increases the surface area of these light-emitting diode chip for backlight unit 10, and the light that this light-emitting diode chip for backlight unit 10 is sent gets into this optical layers 12 easily and carry out the light conversion, effectively promotes the light conversion efficiency and the luminous efficiency of this light-emitting diode 1.This this light-emitting diode chip for backlight unit 10 of optical layers 12 more extensible coatings is to promote the light conversion efficiency of this light-emitting diode 1.
Please consulting Figure 11 in the lump, is the light-emitting diode sketch map of another preferred embodiment of the present invention.As shown in the figure; Present embodiment provides a kind of light-emitting diode that increases luminous efficiency, and present embodiment is different with Figure 10 embodiment to be, this optical layers 12 is provided with a plurality of thermal conduction path 121; The heat energy that this light-emitting diode chip for backlight unit 10 is produced spreads out of via those thermal conduction path 121; Those thermal conduction path 121 can be provided with the Heat Conduction Material (not shown) respectively, and perhaps this optical layers 12 is provided with a heat dissipating layer 18, and this heat dissipating layer 18 is relative with this light-emitting diode chip for backlight unit 10; The heat energy that this light-emitting diode chip for backlight unit 10 is produced reaches this heat dissipating layer 18 via those thermal conduction path 121 and dispels the heat, to promote the radiating efficiency of this light-emitting diode 1.
Seeing also Figure 12, is the light-emitting diode sketch map of another preferred embodiment of the present invention.As shown in the figure; Present embodiment provides a kind of light-emitting diode that increases luminous efficiency; Present embodiment is different with Figure 11 embodiment to be, this optical layers 12 is extended this light-emitting diode chip for backlight unit 10 of coating, and in this light-emitting diode chip for backlight unit 10 selective reflecting layer 19 is set; This selective reflecting layer 19 is a Bragg grating; Can let specific wavelength light through or be reflected, so the light that sent of this light-emitting diode chip for backlight unit 10 reflexes to this optical layers 12 through this selective reflecting layer 19 and carries out the light conversion, will reach this selective reflecting layer 19 through the light of conversion and launch; Promoting the light conversion efficiency of this light-emitting diode 1, and then promote the luminous efficiency of this light-emitting diode 1.The selective reflecting layer 19 of present embodiment can be applicable in above-mentioned this light-emitting diode 1 with this energy conversion layer.
Seeing also Figure 13, is the encapsulating structure sketch map of the light-emitting diode of another preferred embodiment of the present invention.As shown in the figure; The light-emitting diode that above-mentioned Fig. 1 provided more can be arranged in the encapsulating structure 2; This encapsulating structure 2 comprises a load bearing seat 21 and a cover body 22, and this load bearing seat 21 is to carry this light-emitting diode 1, and this load bearing seat 21 comprises two lead foots 211; This cover body 22 is covered in this load bearing seat 21; This light-emitting diode chip for backlight unit 10 electrically connects with lead 24 this two lead foot 211 with this load bearing seat 21, more can in this cover body 22, be provided with an energy conversion layer 23 in addition, to change the optical wavelength that this light-emitting diode 1 is sent.Be the light-emitting diode that the foregoing description provided and the light-emitting diode of present embodiment 1 is replaceable, repeat no more in this.
The above; Be merely a preferred embodiment of the present invention; Be not to be used for limiting the scope that the present invention implements, all equalizations of doing according to the described shape of claim scope of the present invention, structure, characteristic and spirit change and modify, and all should be included in the claim scope of the present invention.
Claims (14)
1. light-emitting diode that can increase luminous efficiency is characterized in that it comprises:
A light-emitting diode chip for backlight unit;
An optical layers is located at the bottom of this light-emitting diode chip for backlight unit, and to increase the luminous efficiency of this light-emitting diode chip for backlight unit, wherein this optical layers is to select one of which in an optical waveguide layer, a reflection layer and an energy conversion layer; And
A roughened layer is located between this light-emitting diode chip for backlight unit and this optical layers.
2. the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that, more is arranged in the encapsulating structure, and wherein this encapsulating structure comprises:
A load bearing seat comprises two lead foots, and carries this light-emitting diode, and this light-emitting diode chip for backlight unit electrically connects with lead and this two lead foot; And
A cover body is covered in this load bearing seat, and wherein this cover body more comprises an energy conversion layer.
3. the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that, the minimum thickness of this optical layers is 5um.
4. the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that, the center line average roughness of this roughened layer is between 0.5nm and 150nm.
5. the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that this optical layers more is provided with a plurality of thermal conduction path, and those thermal conduction path are inserted Heat Conduction Material more respectively.
6. the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that, more comprises: a selective reflecting layer, be located at this light-emitting diode chip for backlight unit, and relative with this optical layers, this selective reflecting layer is a Bragg grating.
7. the light-emitting diode that increases luminous efficiency as claimed in claim 1 is characterized in that, this optical layers is made by rotary coating, ink-jet, electron gun vapor deposition, sputter or screen painting.
8. light-emitting diode that can increase luminous efficiency is characterized in that it comprises:
A light-emitting diode chip for backlight unit; And
An optical layers is located at the bottom of this light-emitting diode chip for backlight unit, and to increase the luminous efficiency of this light-emitting diode chip for backlight unit, wherein this optical layers is an energy conversion layer, and this optical layers is more extended the side that coats this light-emitting diode chip for backlight unit; And
A roughened layer is located between this light-emitting diode chip for backlight unit and this optical layers.
9. the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that, this energy conversion layer is made by rotary coating, ink-jet, electron gun vapor deposition, sputter or screen painting.
10. the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that, more is arranged in the encapsulating structure, and wherein this encapsulating structure comprises:
A load bearing seat comprises two lead foots, and carries this this light-emitting diode, and this light-emitting diode chip for backlight unit electrically connects with lead and this two lead foot; And
A cover body is covered in this load bearing seat.
11. the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that, the minimum thickness of this optical layers is 5um.
12. the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that, the center line average roughness of this roughened layer is between 0.5nm and 150nm.
13. the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that this energy conversion layer more is provided with a plurality of thermal conduction path, those thermal conduction path are inserted Heat Conduction Material more respectively.
14. the light-emitting diode that increases luminous efficiency as claimed in claim 8 is characterized in that, more comprises: a selective reflecting layer, be located at this light-emitting diode chip for backlight unit, and relative with this optical layers, this selective reflecting layer is a Bragg grating.
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| CN2008100849395A CN101533879B (en) | 2008-03-10 | 2008-03-10 | Light-emitting diode (LED) capable of increasing luminescence efficiency |
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| CN101859842A (en) * | 2009-04-07 | 2010-10-13 | 璨扬投资有限公司 | Light emitting diode for increasing luminous efficiency |
| CN101740706B (en) * | 2009-12-14 | 2013-02-06 | 深圳雷曼光电科技股份有限公司 | High-brightness white-light LED and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6472765B1 (en) * | 1998-06-26 | 2002-10-29 | Sanken Electric Co., Ltd. | Plastic encapsulated semiconductor light emitting device with a cover of fluorescent particles |
| CN1812141A (en) * | 2005-01-27 | 2006-08-02 | 先进开发光电股份有限公司 | White light luminous diode package and preparative method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6472765B1 (en) * | 1998-06-26 | 2002-10-29 | Sanken Electric Co., Ltd. | Plastic encapsulated semiconductor light emitting device with a cover of fluorescent particles |
| CN1812141A (en) * | 2005-01-27 | 2006-08-02 | 先进开发光电股份有限公司 | White light luminous diode package and preparative method |
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Effective date of registration: 20161031 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: China Longtan Taiwan Taoyuan County Rural Science and Technology Park Longtan Dragon Garden Road No. 99 Patentee before: Formosa Epitaxy Incorporation |