CN2809881Y - High-brightness LED - Google Patents

High-brightness LED Download PDF

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Publication number
CN2809881Y
CN2809881Y CNU2005200124763U CN200520012476U CN2809881Y CN 2809881 Y CN2809881 Y CN 2809881Y CN U2005200124763 U CNU2005200124763 U CN U2005200124763U CN 200520012476 U CN200520012476 U CN 200520012476U CN 2809881 Y CN2809881 Y CN 2809881Y
Authority
CN
China
Prior art keywords
wafer
light
photic zone
high brightness
brightness led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNU2005200124763U
Other languages
Chinese (zh)
Inventor
林惠作
林景渊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GUANGDING ELECTRONIC CO Ltd
Para Light Electronics Co Ltd
Original Assignee
GUANGDING ELECTRONIC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GUANGDING ELECTRONIC CO Ltd filed Critical GUANGDING ELECTRONIC CO Ltd
Priority to CNU2005200124763U priority Critical patent/CN2809881Y/en
Application granted granted Critical
Publication of CN2809881Y publication Critical patent/CN2809881Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to a high brightness light emitting diode which is mainly provided with a base used for leading a chip to be positioned. The chip is connected with another electrode with a metal wire. The chip on the base is packed by a light penetrating layer. Therefore, the light emitting diode which can emit light rays is formed, wherein the inner part of the light penetrating layer is provided with a slot, and fluorescent powder glue can be injected into the slot, which leads the inner part of the light penetrating layer to be formed with a fluorescent powder glue layer. Therefore, the light emitting diode has the advantages of good effect on collecting light, homogeneous shape of light which is emitted, etc.

Description

High brightness LED
Technical field
The relevant a kind of receipts light of the utility model is good, and the uniform high brightness LED of luminous smooth shape, is applicable to light-emitting diode or similar structures.
Background technology
The generation of light emitting diode construction, bring the utilization of using more diversification, and traditional light emitting diode construction, as shown in Figure 3, mainly comprise: the pedestal A of a tool groove, a wafer B and a photic zone C, this wafer B is incorporated among the groove of pedestal A, passes through the ejection formation of photic zone C again, pedestal A and wafer B are combined as a whole, finish the making of light-emitting diode.Yet the color that traditional light-emitting diode sends depends on the glow color of wafer B fully, and this photic zone C also can't its color of the left and right sides.
Again, can send the white light-emitting diodes of class such as fluorescent lamp color, industry suddenly plays the target of research and development especially, and be broadly divided into two general orientation with the technology of present making white light-emitting diodes, a kind of is to form with red, blue, green three kinds of crystal grain to send white light, right three crystal grain of reason are formed, and keep three look equilibriums is technology places, so the high deficiency of cost is arranged.Another kind method is also can send white light with ultraviolet light (UV) crystal grain in conjunction with the photic zone that is mixed and made into red, blue, green three look phosphor powders, but because of the still untapped maturation of ultraviolet light (UV) crystal grain, therefore can't become main flow.
The inventor is because above-mentioned defective, hope can provide a kind of structure of simplifying, can change the light color that wafer sends, can significantly reduce cost simultaneously, also tool is received the uniform high brightness LED of good, the luminous smooth shape of light, consumption is popular to be used to provide, and desires to grind the motivation of wound for the utility model.
Summary of the invention
Main purpose of the present utility model provides a kind of member by reducing the number of, and can change the high brightness LED of the light color that luminescent wafer sends.
Secondary objective of the present utility model provides a kind of glow color and has the abundant high brightness LED of variation.
A purpose more of the present utility model, provide a kind of luminous smooth shape evenly, receive the good high brightness LED of light effect.
For reaching above-mentioned purpose, the technological means that the utility model adopts is as follows:
A kind of high brightness LED mainly is provided with a pedestal for the wafer placement, utilizes metal wire to constitute the binding of wafer and another electrode, by a photic zone wafer on the pedestal is sealed again, to finish a light-emitting diode that can emit beam, it is characterized in that,
This photic zone inside is provided with a gum-injecting port, and this gum-injecting port and formation one fluting that extends internally are for injecting a phosphor powder glue-line.
As from the foregoing, structure of the present utility model has following practical advantage:
1, the mat member of simplifying changes the color that luminescent wafer sent, and especially can significantly reduce cost at white light-emitting diodes.
2, the formed double-colored optical mirror slip of mat photic zone and phosphor powder glue-line can be received advantages such as the good and luminous smooth shape of light is even.
3, the color of this phosphor powder glue-line and wafer can be arranged in pairs or groups mutually, and the light that makes light-emitting diode send has abundant variation.
Other characteristics of the present utility model and specific embodiment can further be understood in the detailed description of following conjunction with figs..
Description of drawings
Fig. 1 be the utility model embodiment in conjunction with cut-away view.
Fig. 2 is the manufacturing schematic diagram of the double-colored optical mirror slip of the utility model.
Fig. 3 is a cut-away view of commonly using light-emitting diode.
Symbol description among the figure
10, pedestal
11, groove
20, wafer
30, photic zone
31, fluting
32, gum-injecting port
33, phosphor powder glue-line
A, pedestal
B, wafer
C, photic zone
Embodiment
Please join Fig. 1, structure of the present utility model mainly comprises: a pedestal 10, a wafer 20 and photic zone 30, wherein the end face of this pedestal 10 is provided with a groove 11 that sink, supply in conjunction with a wafer 20, this wafer 20 is a blue light wafer, and utilizes metal wire connecting wafer 20 and another electrode (figure does not look out), photic zone 30 is incorporated into groove 11 tops of pedestal 10 again, wafer 20 is coated among the groove 11 of pedestal 10, finishes the making of light-emitting diode.
This photic zone 30 is mainly an optical mirror slip (or by epoxy resin Epoxy, be called for short EP) make, be provided with a gum-injecting port 32 in the bottom of photic zone 30, and this gum-injecting port 32 fluting 31 across whole photic zone 30 that caves inward, and this gum-injecting port 32 of mat injecting glue in fluting 31, as shown in Figure 2, and the glue of being annotated is the fluorescent arogel (please joining Fig. 1 again) that yellow phosphor powder and the transparent insulation glue system of mixing forms, and makes and forms another phosphor powder glue-line 33 in the fluting 31.
Provide a working power to the above-mentioned light-emitting diode of finishing making, make this wafer 20 obtain the energy to send blue light, the blue light that this wafer 20 is sent is directly injected among the photic zone 30, because this phosphor powder glue-line 33 is across whole photic zone 30, so be equal to the top that is cross-placed on wafer 20, therefore, the blue light that this wafer 20 is sent can penetrate white light behind the phosphor powder glue-line 33 that yellow phosphor powder is made.
In addition, this phosphor powder glue-line 33 is not defined as yellow phosphor powder and blue light wafer with wafer 20, and this two color that can be mutual collocation is by this to create the light-emitting diode that color change is enriched.
The above only is preferred embodiment of the present utility model, and when can not be in order to limit the enforceable scope of the utility model, all habit in the personage of this industry obviously can be done to change and modification, all should be considered as not breaking away from flesh and blood of the present utility model.
In sum, the utility model really can reach the intended purposes of utility model, provides a kind of color change to enrich, receives the uniform high brightness LED of good, the luminous smooth shape of light, has practical value undoubtedly, proposes patent application in accordance with the law.

Claims (6)

1, a kind of high brightness LED mainly is provided with a pedestal for the wafer placement, utilizes metal wire to constitute the binding of wafer and another electrode, by a photic zone wafer on the pedestal is sealed again, to finish a light-emitting diode that can emit beam, it is characterized in that,
This photic zone inside is provided with a gum-injecting port, and this gum-injecting port and formation one fluting that extends internally are for injecting a phosphor powder glue-line.
2, high brightness LED as claimed in claim 1 is characterized in that, this pedestal is provided with one for the groove of putting wafer.
3, high brightness LED as claimed in claim 1 is characterized in that, the inner set fluting of this photic zone is across whole photic zone, thus when photic zone combines with pedestal, this fluting place wafer directly over.
4, high brightness LED as claimed in claim 1 is characterized in that, this phosphor powder glue-line is that phosphor powder and the transparent insulation glue system of mixing forms.
5, high brightness LED as claimed in claim 1 is characterized in that, this euphotic refractive index is between 1.43~2.0.
6, high brightness LED as claimed in claim 1 is characterized in that, this photic zone is an optical mirror slip.
CNU2005200124763U 2005-05-20 2005-05-20 High-brightness LED Expired - Fee Related CN2809881Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2005200124763U CN2809881Y (en) 2005-05-20 2005-05-20 High-brightness LED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2005200124763U CN2809881Y (en) 2005-05-20 2005-05-20 High-brightness LED

Publications (1)

Publication Number Publication Date
CN2809881Y true CN2809881Y (en) 2006-08-23

Family

ID=36926065

Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2005200124763U Expired - Fee Related CN2809881Y (en) 2005-05-20 2005-05-20 High-brightness LED

Country Status (1)

Country Link
CN (1) CN2809881Y (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008148342A1 (en) * 2007-06-05 2008-12-11 Jianping Zhu An illuminator with white light planar light source
CN102214778A (en) * 2011-05-18 2011-10-12 五邑大学 Packaging structure of LED (light-emitting diode) chip and manufacturing method thereof
WO2012139325A1 (en) * 2011-04-12 2012-10-18 广东佛照新光源科技有限公司 Wavelength conversion device and manufacture method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008148342A1 (en) * 2007-06-05 2008-12-11 Jianping Zhu An illuminator with white light planar light source
WO2012139325A1 (en) * 2011-04-12 2012-10-18 广东佛照新光源科技有限公司 Wavelength conversion device and manufacture method thereof
CN102214778A (en) * 2011-05-18 2011-10-12 五邑大学 Packaging structure of LED (light-emitting diode) chip and manufacturing method thereof

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060823

Termination date: 20130520