CN2809881Y - High-brightness LED - Google Patents
High-brightness LED Download PDFInfo
- Publication number
- CN2809881Y CN2809881Y CNU2005200124763U CN200520012476U CN2809881Y CN 2809881 Y CN2809881 Y CN 2809881Y CN U2005200124763 U CNU2005200124763 U CN U2005200124763U CN 200520012476 U CN200520012476 U CN 200520012476U CN 2809881 Y CN2809881 Y CN 2809881Y
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- CN
- China
- Prior art keywords
- wafer
- light
- photic zone
- high brightness
- brightness led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model relates to a high brightness light emitting diode which is mainly provided with a base used for leading a chip to be positioned. The chip is connected with another electrode with a metal wire. The chip on the base is packed by a light penetrating layer. Therefore, the light emitting diode which can emit light rays is formed, wherein the inner part of the light penetrating layer is provided with a slot, and fluorescent powder glue can be injected into the slot, which leads the inner part of the light penetrating layer to be formed with a fluorescent powder glue layer. Therefore, the light emitting diode has the advantages of good effect on collecting light, homogeneous shape of light which is emitted, etc.
Description
Technical field
The relevant a kind of receipts light of the utility model is good, and the uniform high brightness LED of luminous smooth shape, is applicable to light-emitting diode or similar structures.
Background technology
The generation of light emitting diode construction, bring the utilization of using more diversification, and traditional light emitting diode construction, as shown in Figure 3, mainly comprise: the pedestal A of a tool groove, a wafer B and a photic zone C, this wafer B is incorporated among the groove of pedestal A, passes through the ejection formation of photic zone C again, pedestal A and wafer B are combined as a whole, finish the making of light-emitting diode.Yet the color that traditional light-emitting diode sends depends on the glow color of wafer B fully, and this photic zone C also can't its color of the left and right sides.
Again, can send the white light-emitting diodes of class such as fluorescent lamp color, industry suddenly plays the target of research and development especially, and be broadly divided into two general orientation with the technology of present making white light-emitting diodes, a kind of is to form with red, blue, green three kinds of crystal grain to send white light, right three crystal grain of reason are formed, and keep three look equilibriums is technology places, so the high deficiency of cost is arranged.Another kind method is also can send white light with ultraviolet light (UV) crystal grain in conjunction with the photic zone that is mixed and made into red, blue, green three look phosphor powders, but because of the still untapped maturation of ultraviolet light (UV) crystal grain, therefore can't become main flow.
The inventor is because above-mentioned defective, hope can provide a kind of structure of simplifying, can change the light color that wafer sends, can significantly reduce cost simultaneously, also tool is received the uniform high brightness LED of good, the luminous smooth shape of light, consumption is popular to be used to provide, and desires to grind the motivation of wound for the utility model.
Summary of the invention
Main purpose of the present utility model provides a kind of member by reducing the number of, and can change the high brightness LED of the light color that luminescent wafer sends.
Secondary objective of the present utility model provides a kind of glow color and has the abundant high brightness LED of variation.
A purpose more of the present utility model, provide a kind of luminous smooth shape evenly, receive the good high brightness LED of light effect.
For reaching above-mentioned purpose, the technological means that the utility model adopts is as follows:
A kind of high brightness LED mainly is provided with a pedestal for the wafer placement, utilizes metal wire to constitute the binding of wafer and another electrode, by a photic zone wafer on the pedestal is sealed again, to finish a light-emitting diode that can emit beam, it is characterized in that,
This photic zone inside is provided with a gum-injecting port, and this gum-injecting port and formation one fluting that extends internally are for injecting a phosphor powder glue-line.
As from the foregoing, structure of the present utility model has following practical advantage:
1, the mat member of simplifying changes the color that luminescent wafer sent, and especially can significantly reduce cost at white light-emitting diodes.
2, the formed double-colored optical mirror slip of mat photic zone and phosphor powder glue-line can be received advantages such as the good and luminous smooth shape of light is even.
3, the color of this phosphor powder glue-line and wafer can be arranged in pairs or groups mutually, and the light that makes light-emitting diode send has abundant variation.
Other characteristics of the present utility model and specific embodiment can further be understood in the detailed description of following conjunction with figs..
Description of drawings
Fig. 1 be the utility model embodiment in conjunction with cut-away view.
Fig. 2 is the manufacturing schematic diagram of the double-colored optical mirror slip of the utility model.
Fig. 3 is a cut-away view of commonly using light-emitting diode.
Symbol description among the figure
10, pedestal
11, groove
20, wafer
30, photic zone
31, fluting
32, gum-injecting port
33, phosphor powder glue-line
A, pedestal
B, wafer
C, photic zone
Embodiment
Please join Fig. 1, structure of the present utility model mainly comprises: a pedestal 10, a wafer 20 and photic zone 30, wherein the end face of this pedestal 10 is provided with a groove 11 that sink, supply in conjunction with a wafer 20, this wafer 20 is a blue light wafer, and utilizes metal wire connecting wafer 20 and another electrode (figure does not look out), photic zone 30 is incorporated into groove 11 tops of pedestal 10 again, wafer 20 is coated among the groove 11 of pedestal 10, finishes the making of light-emitting diode.
This photic zone 30 is mainly an optical mirror slip (or by epoxy resin Epoxy, be called for short EP) make, be provided with a gum-injecting port 32 in the bottom of photic zone 30, and this gum-injecting port 32 fluting 31 across whole photic zone 30 that caves inward, and this gum-injecting port 32 of mat injecting glue in fluting 31, as shown in Figure 2, and the glue of being annotated is the fluorescent arogel (please joining Fig. 1 again) that yellow phosphor powder and the transparent insulation glue system of mixing forms, and makes and forms another phosphor powder glue-line 33 in the fluting 31.
Provide a working power to the above-mentioned light-emitting diode of finishing making, make this wafer 20 obtain the energy to send blue light, the blue light that this wafer 20 is sent is directly injected among the photic zone 30, because this phosphor powder glue-line 33 is across whole photic zone 30, so be equal to the top that is cross-placed on wafer 20, therefore, the blue light that this wafer 20 is sent can penetrate white light behind the phosphor powder glue-line 33 that yellow phosphor powder is made.
In addition, this phosphor powder glue-line 33 is not defined as yellow phosphor powder and blue light wafer with wafer 20, and this two color that can be mutual collocation is by this to create the light-emitting diode that color change is enriched.
The above only is preferred embodiment of the present utility model, and when can not be in order to limit the enforceable scope of the utility model, all habit in the personage of this industry obviously can be done to change and modification, all should be considered as not breaking away from flesh and blood of the present utility model.
In sum, the utility model really can reach the intended purposes of utility model, provides a kind of color change to enrich, receives the uniform high brightness LED of good, the luminous smooth shape of light, has practical value undoubtedly, proposes patent application in accordance with the law.
Claims (6)
1, a kind of high brightness LED mainly is provided with a pedestal for the wafer placement, utilizes metal wire to constitute the binding of wafer and another electrode, by a photic zone wafer on the pedestal is sealed again, to finish a light-emitting diode that can emit beam, it is characterized in that,
This photic zone inside is provided with a gum-injecting port, and this gum-injecting port and formation one fluting that extends internally are for injecting a phosphor powder glue-line.
2, high brightness LED as claimed in claim 1 is characterized in that, this pedestal is provided with one for the groove of putting wafer.
3, high brightness LED as claimed in claim 1 is characterized in that, the inner set fluting of this photic zone is across whole photic zone, thus when photic zone combines with pedestal, this fluting place wafer directly over.
4, high brightness LED as claimed in claim 1 is characterized in that, this phosphor powder glue-line is that phosphor powder and the transparent insulation glue system of mixing forms.
5, high brightness LED as claimed in claim 1 is characterized in that, this euphotic refractive index is between 1.43~2.0.
6, high brightness LED as claimed in claim 1 is characterized in that, this photic zone is an optical mirror slip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNU2005200124763U CN2809881Y (en) | 2005-05-20 | 2005-05-20 | High-brightness LED |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNU2005200124763U CN2809881Y (en) | 2005-05-20 | 2005-05-20 | High-brightness LED |
Publications (1)
Publication Number | Publication Date |
---|---|
CN2809881Y true CN2809881Y (en) | 2006-08-23 |
Family
ID=36926065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNU2005200124763U Expired - Fee Related CN2809881Y (en) | 2005-05-20 | 2005-05-20 | High-brightness LED |
Country Status (1)
Country | Link |
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CN (1) | CN2809881Y (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008148342A1 (en) * | 2007-06-05 | 2008-12-11 | Jianping Zhu | An illuminator with white light planar light source |
CN102214778A (en) * | 2011-05-18 | 2011-10-12 | 五邑大学 | Packaging structure of LED (light-emitting diode) chip and manufacturing method thereof |
WO2012139325A1 (en) * | 2011-04-12 | 2012-10-18 | 广东佛照新光源科技有限公司 | Wavelength conversion device and manufacture method thereof |
-
2005
- 2005-05-20 CN CNU2005200124763U patent/CN2809881Y/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008148342A1 (en) * | 2007-06-05 | 2008-12-11 | Jianping Zhu | An illuminator with white light planar light source |
WO2012139325A1 (en) * | 2011-04-12 | 2012-10-18 | 广东佛照新光源科技有限公司 | Wavelength conversion device and manufacture method thereof |
CN102214778A (en) * | 2011-05-18 | 2011-10-12 | 五邑大学 | Packaging structure of LED (light-emitting diode) chip and manufacturing method thereof |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060823 Termination date: 20130520 |