CN101442087B - Low power low light loss white light LED - Google Patents
Low power low light loss white light LED Download PDFInfo
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- CN101442087B CN101442087B CN2007101247533A CN200710124753A CN101442087B CN 101442087 B CN101442087 B CN 101442087B CN 2007101247533 A CN2007101247533 A CN 2007101247533A CN 200710124753 A CN200710124753 A CN 200710124753A CN 101442087 B CN101442087 B CN 101442087B
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Abstract
The invention discloses a miniwatt low-light decay white light LED. The low-light decay white light LED comprises a bracket and an LED chip, wherein the LED chip is adhered to the bracket. The low-light decay white light LED is characterized in that the LED chip is adhered to the bracket through silica gel; the LED chip is covered with fluorescent glue which is obtained by mixing a carrier, namely the silica gel with the fluorescent powder; and the surface of the fluorescent glue is covered with a layer of proliferation powder which is obtained by mixing epoxide resin with silicon. The low-light decay white light LED can not only increase the brightness of the white light LED, but also can lower brightness decay of the white light LED.
Description
Technical field:
The present invention relates to a kind of low power low light loss white light LED.
Background technology:
At present, the advantage such as just little with its volume, the good anti-vibration of LED, rich color is captured rapidly the market of photoelectricity industry.Especially the successful research and production of white light LEDs has been accelerated the paces that LED enters illuminating industry.The white light LEDs common process is to be excited by yellow fluorescent powder by blue light to produce white light, and the brightness decay of white light mainly contains three factors, the 1. decay of chip brightness; 2. aging (understanding extinction after solid glue is aging) of die bond glue; 3. fluorescence carrier glue is aging.
Traditional small-power white LED lamp is to adopt the insulating cement fixed chip; Adopting epoxy resin is the fluorescence fractional bearer, joins that yellow fluorescent powder covers, and the Main Ingredients and Appearance of these two kinds of glue all is epoxy resin.In lighting process, because epoxy resin xanthochromia and charing phenomenon occur under the effect of high temperature (luminescence chip discharges certain heat in luminous) and low band ultraviolet light, and have a strong impact on light extraction efficiency, in continuous luminescence process, charing is constantly deepened, so that light extraction efficiency is more and more lower, brightness descends, thereby makes brightness decay (abbreviation light decay) more and more serious.Generally the lasting 1000H/20mA/22 of white light LEDs～brightness of 28 ℃ of points is aging, and its light decay can reach 30～50%.The light decay problem of white light LEDs is seriously restricting application and the development of white light LEDs.
Summary of the invention:
The purpose of this invention is to provide a kind of brightness that not only can improve white light LEDs, and can reduce the low power low light loss white light LED of the brightness decay of white light LEDs.
Purpose of the present invention is achieved through the following technical solutions.
A kind of low power low light loss white light LED comprises support and luminescence chip, and luminescence chip is bonded on the support, and described luminescence chip is bonded on the support by bonding silica gel.
Described luminescence chip covers fluorescent glue outward, fluorescent glue take silica gel as carrier with fluorescent material mixing gained.
Fluorescent glue is prepared following raw material by weight proportion:
Silica gel (SAE1742A glue): 10～30
Silica gel (SAE1742B glue): 10～30
Fluorescent material (4-3-2): 1～3
Fluorescent material (00902): 0.1～0.3.
The surface of described fluorescent glue is coated with lid layer epoxy resin mixing silicon spread powder.
The present invention compared with prior art has the following advantages.
The present invention all changes die bonding glue and fluorescent material carrier glue into silica gel, because silica gel has high-termal conductivity, and at high temperature not charing, and anti-low ripple ultraviolet light ability is strong, light transmission good, thus reduce decay.
Description of drawings:
Fig. 1 is the structure chart of low power low light loss white light LED;
Fig. 2 is another structure chart of low power low light loss white light LED.
Embodiment:
Below in conjunction with accompanying drawing low power low light loss white light LED of the present invention is described in further detail.
Such as Fig. 1 and shown in Figure 2, plug-in type LED mainly is comprised of with epoxy resin layer 7 support 1, bonding silica gel 2, chip 3, gold thread 4, silica gel mixed fluorescent powder layer 5, epoxy resin mixing silicon diffusion bisque 6.Adopting surface mounted LED mainly is comprised of with printing opacity housing 6 support 1, bonding silica gel 2, luminescence chip 3, gold thread, silica gel mixed fluorescent powder layer 5.Luminescence chip is bonded on the support by bonding silica gel, and luminescence chip covers fluorescent glue outward, fluorescent glue take silica gel as carrier with fluorescent material mixing gained, the surface of fluorescent glue is coated with lid layer epoxy resin mixing silicon spread powder.When producing, at first when chip and support bonding, adopt silica gel as adhesive glue; Secondly phosphor powder layer employing silica gel is that carrier mixes with fluorescent material, then covers blue chip, because silica gel is compared epoxy resin, its thermal conductivity is good, has the characteristic of not yellow of high temperature, not charing, and the aging ability of anti-low ripple ultraviolet light is strong; Be exactly to be coated with again lid layer epoxy resin mixing silicon spread powder on the fluorescent glue surface again, with solving epoxy resin and interface problem between the silica gel (when silica gel is combined with epoxy resin, owing to have certain interface between two kinds of materials, when lighting because the impact of temperature, and the interface is changed, thereby affect photochromic) the silicon spread powder is mixed with epoxy, and then coat on fluorescent material, because the combination of silica flour and epoxy, thereby solved interface problem; At last, outer package glue available epoxy or silica gel.
For example:
1. die bond adopts glue KER-3000M2 (die bond silica gel a kind of) to fix blue chip C-X457GJ1300.
2. bonding wire is connected with support with the N electrode by the P electrode of gold thread with chip.
3. join fluorescent glue, by weight proportion the following raw material of preparation
Silica gel (SAE1742A glue): 10～30
Silica gel (SAE1742B glue): 10～30
Fluorescent material (4-3-2): 1～3
Fluorescent material (00902): 0.1～0.3
4. some glue equably covers blue chip on by point gum machine the fluorescent glue of said ratio preparation;
5. join second layer silica flour epoxy epoxy glue, by weight proportion the following raw material of preparation
Epoxy resin (2015A): 45
Epoxy resin (2015B): 45
Silica flour: 10
6. secondary point glue covers the silica flour epoxy epoxy glue of said ratio preparation on the ground floor fluorescent glue equably by point gum machine;
7. join the encapsulation epoxy glue, by weight proportion the following raw material of preparation
Epoxy resin (2015A): 800
Epoxy resin (2015A): 800
8. with above-mentioned material (semi-finished product that support and brilliant light, fluorescent material form), by molding machine it is encapsulated in the middle of the epoxy resin glue.
The encapsulation combination is finished.By the white light LEDs that following technique is made, its color coordinate scope X:0.18-0.50/Y:0.18-0.50, ℃ lasting some brightness is worn out through 1000H/20mA/22～28, and light decay can be controlled in about 5～15%.
Claims (2)
1. a low power low light loss white light LED comprises support and luminescence chip, and luminescence chip is bonded on the support, and described luminescence chip is bonded on the support by bonding silica gel; Described luminescence chip covers fluorescent glue outward, fluorescent glue take silica gel as carrier with fluorescent material mixing gained; It is characterized in that: fluorescent glue is prepared following raw material by weight proportion:
SAE1742A silica gel: 10～30
SAE1742B silica gel: 10～30
4-3-2 fluorescent material: 1～3
00902 fluorescent material: 0.1～0.3.
2. low power low light loss white light LED according to claim 1, it is characterized in that: the surface of described fluorescent glue is coated with lid layer epoxy resin mixing silicon spread powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101247533A CN101442087B (en) | 2007-11-22 | 2007-11-22 | Low power low light loss white light LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101247533A CN101442087B (en) | 2007-11-22 | 2007-11-22 | Low power low light loss white light LED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101442087A CN101442087A (en) | 2009-05-27 |
| CN101442087B true CN101442087B (en) | 2013-01-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101247533A Active CN101442087B (en) | 2007-11-22 | 2007-11-22 | Low power low light loss white light LED |
Country Status (1)
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| CN (1) | CN101442087B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894898B (en) * | 2010-06-13 | 2013-07-17 | 深圳雷曼光电科技股份有限公司 | LED and package method thereof |
| CN101937964A (en) * | 2010-08-24 | 2011-01-05 | 深圳市洲明科技股份有限公司 | LED (Light-Emitting Diode) packaging structure and packaging method |
| CN102074623A (en) * | 2010-11-23 | 2011-05-25 | 惠州雷曼光电科技有限公司 | Colored LED (Light-Emitting Diode) and manufacturing method thereof |
| CN102151366B (en) * | 2011-05-06 | 2012-12-26 | 广东隆达光电科技有限公司 | Red light LED (Light Emitting Diode) lamp with cosmetic effect |
| CN202949604U (en) * | 2012-08-20 | 2013-05-22 | 南通亚泰蜡业工艺品有限公司 | Constant current boosting light-emitting circuit of electronic candle |
| CN106531857A (en) * | 2016-12-28 | 2017-03-22 | 芜湖聚飞光电科技有限公司 | Chip scale LED packaging structure and packaging technology |
| CN113611788B (en) * | 2021-10-11 | 2021-12-03 | 南通宝恒工贸有限公司 | Light emitting diode and manufacturing method thereof |
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|---|---|---|---|---|
| CN2747710Y (en) * | 2004-08-06 | 2005-12-21 | 昆明物理研究所 | High-power high-brightness LED package device |
| CN1838440A (en) * | 2006-03-03 | 2006-09-27 | 中山大学 | White light LED and packaging method thereof |
| CN2935474Y (en) * | 2007-01-12 | 2007-08-15 | 吴庆华 | Functional lighting LED |
| CN200941392Y (en) * | 2006-08-29 | 2007-08-29 | 福建省苍乐电子企业有限公司 | Encapsulating structure of small power LED |
| CN201167098Y (en) * | 2007-11-22 | 2008-12-17 | 广州市鸿利光电子有限公司 | Low light-decline small power white light LED |
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- 2007-11-22 CN CN2007101247533A patent/CN101442087B/en active Active
Patent Citations (5)
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|---|---|---|---|---|
| CN2747710Y (en) * | 2004-08-06 | 2005-12-21 | 昆明物理研究所 | High-power high-brightness LED package device |
| CN1838440A (en) * | 2006-03-03 | 2006-09-27 | 中山大学 | White light LED and packaging method thereof |
| CN200941392Y (en) * | 2006-08-29 | 2007-08-29 | 福建省苍乐电子企业有限公司 | Encapsulating structure of small power LED |
| CN2935474Y (en) * | 2007-01-12 | 2007-08-15 | 吴庆华 | Functional lighting LED |
| CN201167098Y (en) * | 2007-11-22 | 2008-12-17 | 广州市鸿利光电子有限公司 | Low light-decline small power white light LED |
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| CN101442087A (en) | 2009-05-27 |
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Address after: 510890 Huadu District, Guangdong, Guangzhou Flower Town, SAST Road, No. 1, No. 1 Patentee after: Hongli Newell group Limited by Share Ltd Address before: Four 11D room, 510000 floor, building B, 10 Fengshen Road, Huadu District, Guangdong, Guangzhou Patentee before: Guangzhou Hongli Tronic Co., Ltd. |