CN106449914B - A kind of GaN base light emitting epitaxial structure and preparation method thereof - Google Patents

A kind of GaN base light emitting epitaxial structure and preparation method thereof Download PDF

Info

Publication number
CN106449914B
CN106449914B CN201610723043.1A CN201610723043A CN106449914B CN 106449914 B CN106449914 B CN 106449914B CN 201610723043 A CN201610723043 A CN 201610723043A CN 106449914 B CN106449914 B CN 106449914B
Authority
CN
China
Prior art keywords
layer
gan
undoped
potential well
type gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201610723043.1A
Other languages
Chinese (zh)
Other versions
CN106449914A (en
Inventor
展望
马后永
琚晶
游正璋
李起鸣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Enraytek Optoelectronics Co Ltd
Original Assignee
Enraytek Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enraytek Optoelectronics Co Ltd filed Critical Enraytek Optoelectronics Co Ltd
Priority to CN201610723043.1A priority Critical patent/CN106449914B/en
Publication of CN106449914A publication Critical patent/CN106449914A/en
Application granted granted Critical
Publication of CN106449914B publication Critical patent/CN106449914B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

A kind of GaN base light emitting epitaxial structure and preparation method thereof, by obtaining quasi- AlGaN alloy barrier layer in multi-quantum well luminescence layer alternating growth AlN material and GaN material, the good two-dimensional electron gas structure of electric property is formed between the quasi- AlGaN alloy barrier layer of superlattices and GaN layer, form higher electron concentration and higher electron mobility, and it can effectively enhance the ability extending transversely of electronics, reduce the piezoelectricity field-effect of device itself, forward voltage is effectively reduced, improve the injection efficiency of carrier, and then improve the luminous efficiency of GaN base light emitting.

Description

A kind of GaN base light emitting epitaxial structure and preparation method thereof
Technical field
The present invention relates to light emitting diode manufacturing field more particularly to a kind of GaN base light emitting epitaxial structure and its Preparation method.
Background technique
Extensive research, development and application are being obtained nearly ten years by the III-V nitride material of representative of GaN. As shown in Figure 1, the epitaxial structure of the GaN base light emitting successively includes：The nucleating layer 2 ' being arranged on substrate 1 ', if The GaN layer 3 ' on nucleating layer 2 ' is set, the N-type GaN layer 4 ' being arranged in GaN layer 3 ', the volume being arranged in N-type GaN layer 4 ' Sub- trap（MQW）Luminescent layer 5 ', and the p-type GaN layer 6 ' being arranged in multi-quantum well luminescence layer 5 '.Two pole of GaN base High Efficiency Luminescence Pipe has that the service life is long, the distinguishing features such as energy saving, environmentally protective, be widely used in illumination, large screen display, traffic signals, Multimedia display and optical communication field.
But GaN base light emitting（LED）Luminous efficiency will receive the influences of many factors and cause luminous efficiency inclined It is low, seriously constrain GaN semiconductor light-emitting-diode as high brightness, high-power component lighting area business application.Cause And the luminous efficiency of GaN base light emitting how is improved, receive the extensive concern of whole world developer and producer.
Summary of the invention
The present invention provides a kind of GaN base light emitting epitaxial structure and preparation method thereof, by multiple quantum well light emitting Layer alternating growth AlN material and GaN material and obtain quasi- AlGaN alloy barrier layer, the quasi- AlGaN alloy barrier layer of superlattices with The good two-dimensional electron gas structure of electric property is formed between GaN layer, forms higher electron concentration and higher electron transfer Rate, and can effectively enhance the ability extending transversely of electronics, the piezoelectricity field-effect of device itself is reduced, positive electricity is effectively reduced Pressure improves the injection efficiency of carrier, and then improves the luminous efficiency of GaN base light emitting.
In order to achieve the above object, the present invention provides a kind of GaN base light emitting epitaxial structure, includes：
Nucleating layer on substrate is set；
Layer of undoped gan on nucleating layer is set；
N-type GaN layer in layer of undoped gan is set；
Multi-quantum well luminescence layer in N-type GaN layer is set；
And the p-type GaN layer in multi-quantum well luminescence layer is set；
The multi-quantum well luminescence layer includes：In the potential barrier potential well period pair of multiple superpositions, the potential barrier potential well period is to packet Potential well layer containing InGaN and the quasi- AlGaN alloy barrier layer being arranged on InGaN potential well layer, the potential barrier potential well period pair of the bottom It is arranged in N-type GaN layer, the potential barrier potential well period of top is to upper setting p-type GaN layer, the quantity n in the potential barrier potential well period pair Meet 2≤n≤30；
The quasi- AlGaN alloy barrier layer includes：The circulation layer of multiple superpositions, the circulation layer include undoped with AlN layers It is arranged on InGaN potential well layer with the circulation layer of the layer of undoped gan being arranged on undoped AlN layer, the bottom, top P-type GaN layer is set on circulation layer, and the quantity m of the circulation layer meets 1≤m≤20.
The InGaN potential well layer with a thickness of 0.5nm ~ 5nm, In group is divided into 15 ~ 20% in InGaN potential well layer, described The overall thickness of quasi- AlGaN alloy barrier layer is 1-30nm, undoped with AlN layers and layer of undoped gan）Thickness ratio be 0.2-5, not Al group is divided into 10%-50% in AlN layers of doping.
The substrate is using sapphire or GaN or silicon or silicon carbide.
The material of the nucleating layer is undoped GaN, with a thickness of 15 ~ 50nm.
The overall thickness of the layer of undoped gan and N-type GaN layer is 1.5 ~ 8um, and the Si doping of the N-type GaN layer is dense Degree is 1e18 ~ 3e19.
The p-type GaN layer with a thickness of 30 ~ 500nm, the Mg doping concentration of p-type GaN layer is 1e18 ~ 2e20.
The present invention also provides a kind of preparation methods of GaN base light emitting epitaxial structure, comprise the steps of：
Step S1, deposition growing nucleating layer on substrate；
Step S2, the deposition growing layer of undoped gan on nucleating layer, and N-type GaN layer is grown in layer of undoped gan；
Step S3, the deposition growing multi-quantum well luminescence layer in N-type GaN layer；
One layer of InGaN potential well layer of deposition growing in N-type GaN layer, the quasi- AlGaN of deposition growing on the InGaN potential well layer Alloy barrier layer forms first pair of potential barrier potential well period pair；
One layer of InGaN potential well layer of deposition growing on the quasi- AlGaN alloy barrier layer in first pair of potential barrier potential well period pair, The quasi- AlGaN alloy barrier layer of deposition growing on the InGaN potential well layer forms second pair of potential barrier potential well period pair；
Continue second pair of potential barrier potential well period to upper deposition growing third to the potential barrier potential well period pair, and so on, it sinks The product n potential barrier potential well period pair of growth；
The quantity n in the potential barrier potential well period pair meets 2≤n≤30；
The step of growth quasi- AlGaN alloy barrier layer specifically includes：
One layer of deposition growing is undoped with AlN layers on InGaN potential well layer, is not mixed undoped with deposition growing on AlN layer at this Miscellaneous GaN layer forms first layer circulation layer；
One layer of deposition growing is undoped with AlN layers in the layer of undoped gan in first layer circulation layer, this undoped with AlN Deposition growing layer of undoped gan on layer forms second layer circulation layer；
Continue the deposition growing third layer circulation layer on second layer circulation layer, and so on, m circulation layer of deposition growing；
The quantity m of the circulation layer meets 1≤m≤20；
Step S4, the deposition growing p-type GaN layer in multi-quantum well luminescence layer.
The growth temperature of the nucleating layer is 400 ~ 700 DEG C.
The step of described growth layer of undoped gan includes：In NH3It is passed through the source Ga under atmosphere and generates undoped GaN layer.
The step of described growth N-type GaN layer includes：During deposition growing is undoped with GaN, it is passed through SiH4- silicon Alkane adulterates to form N-type GaN layer, and the Si doping concentration of N-type GaN layer is 1e18 ~ 3e19.
The growth temperature of the layer of undoped gan and N-type GaN layer is 800 ~ 1200 DEG C.
The growth temperature of the multi-quantum well luminescence layer is 600 DEG C ~ 900 DEG C.
The step of described growth InGaN potential well layer includes：During deposition growing is undoped with GaN, it is passed through TMIn InGaN potential well layer is formed, In group is divided into 15 ~ 20% in InGaN potential well layer.
The step of growth is undoped with AlN layers include：In NH3TMAl is passed through under atmosphere to be formed undoped with AlN layers, not Al group is divided into 10%-50% in doping AlN layer 501.
The step of described growth P-type GaN layer include：During deposition growing is undoped with GaN, it is passed through MgCp2Shape At p-type GaN layer, Mg doping concentration is 1e18 ~ 2e20 in p-type GaN layer.
The growth temperature of the p-type GaN layer is 800 DEG C ~ 1100 DEG C.
The present invention is by obtaining quasi- AlGaN alloy gesture in multi-quantum well luminescence layer alternating growth AlN material and GaN material Barrier layer forms the good two-dimensional electron gas structure of electric property between the quasi- AlGaN alloy barrier layer of superlattices and GaN layer, formed Higher electron concentration and higher electron mobility, and can effectively enhance the ability extending transversely of electronics, reduce device sheet The piezoelectricity field-effect of body, is effectively reduced forward voltage, improves the injection efficiency of carrier, and then improve GaN base light-emitting diodes The luminous efficiency of pipe.
Detailed description of the invention
Fig. 1 is the schematic diagram of GaN base light emitting epitaxial structure in background technique.
Fig. 2 is a kind of schematic diagram of GaN base light emitting epitaxial structure provided by the invention.
Fig. 3 is the structural schematic diagram of multi-quantum well luminescence layer.
Fig. 4 is the structural schematic diagram of quasi- AlGaN alloy barrier layer.
Fig. 5 is a kind of detailed maps of GaN base light emitting epitaxial structure provided by the invention.
Specific embodiment
Below according to Fig. 2~Fig. 5, presently preferred embodiments of the present invention is illustrated.
As shown in Fig. 2, the present invention provides a kind of GaN base light emitting epitaxial structure, include：
Nucleating layer 2 on substrate 1 is set；
Layer of undoped gan 3 on nucleating layer 2 is set；
N-type GaN layer 4 in layer of undoped gan 3 is set；
Multi-quantum well luminescence layer 5 in N-type GaN layer 4 is set；
And the p-type GaN layer 6 in multi-quantum well luminescence layer 5 is set.
As shown in Figure 3 and Figure 5, the multi-quantum well luminescence layer 5 includes：It the potential barrier potential well period pair of multiple superpositions, should The potential barrier potential well period is to the quasi- AlGaN alloy barrier layer for including InGaN potential well layer 501 and being arranged on InGaN potential well layer 501 502, the potential barrier potential well period of the bottom, the potential barrier potential well period of top was to upper setting p-type to being arranged in N-type GaN layer 4 The quantity n of GaN layer 6, the potential barrier potential well period pair meets 2≤n≤30；
The InGaN potential well layer 501 with a thickness of 0.5nm ~ 5nm, In group is divided into 15 ~ 20% in InGaN potential well layer 501；
As shown in Figure 4 and Figure 5, the quasi- AlGaN alloy barrier layer 502 includes：The circulation layer of multiple superpositions, the circulation Layer is comprising undoped with AlN layer 5021 and the layer of undoped gan 5022 being arranged on undoped AlN layer 5021, the circulation of the bottom Layer is arranged on InGaN potential well layer 501, and p-type GaN layer 6 is arranged on the circulation layer of top, and the quantity m of the circulation layer meets 1 ≤m ≤ 20。
The overall thickness of the quasi- AlGaN alloy barrier layer 502 is 1-30nm, undoped with AlN layer 5021 and undoped GaN The thickness ratio of layer 5022 is 0.2-5, is divided into 10%-50% undoped with Al group in AlN layer 5021.
The substrate 1 is using the material for being suitble to GaN and its semiconductor epitaxial Material growth, such as sapphire, GaN, silicon, carbon The monocrystalline such as SiClx.
The material of the nucleating layer 2 is undoped GaN, with a thickness of 15 ~ 50nm.
The overall thickness of the layer of undoped gan 3 and N-type GaN layer 4 is 1.5 ~ 8um.
The Si doping concentration of the N-type GaN layer 4 is 1e18 ~ 3e19.
The p-type GaN layer 6 with a thickness of 30 ~ 500nm, the Mg doping concentration of p-type GaN layer 6 is 1e18 ~ 2e20.
The present invention also provides a kind of preparation methods of GaN base light emitting epitaxial structure, comprise the steps of：
Step S1, deposition growing nucleating layer on substrate；
The substrate is using the material for being suitble to GaN and its semiconductor epitaxial Material growth, such as sapphire, GaN, silicon, carbon The monocrystalline such as SiClx；
The material of nucleating layer be undoped GaN, growth temperature be 400 ~ 700 DEG C, nucleating layer with a thickness of 15 ~ 50nm；
The step of described growth layer of undoped gan includes：In NH3It is passed through the source Ga under atmosphere and generates undoped GaN layer；
Step S2, the deposition growing layer of undoped gan on nucleating layer, and N-type GaN layer is grown in layer of undoped gan；
The step of described growth layer of undoped gan includes：In NH3It is passed through the source Ga under atmosphere and generates undoped GaN layer；
The step of described growth N-type GaN layer includes：During deposition growing is undoped with GaN, it is passed through SiH4- silicon Alkane adulterates to form N-type GaN layer；
The growth temperature of layer of undoped gan and N-type GaN layer is 800 ~ 1200 DEG C, layer of undoped gan and N-type GaN layer it is total With a thickness of 1.5 ~ 8um, the Si doping concentration of N-type GaN layer is 1e18 ~ 3e19；
Step S3, the deposition growing multi-quantum well luminescence layer in N-type GaN layer；
One layer of InGaN potential well layer of deposition growing in N-type GaN layer, the quasi- AlGaN of deposition growing on the InGaN potential well layer Alloy barrier layer forms first pair of potential barrier potential well period pair；
One layer of InGaN potential well layer of deposition growing on the quasi- AlGaN alloy barrier layer in first pair of potential barrier potential well period pair, The quasi- AlGaN alloy barrier layer of deposition growing on the InGaN potential well layer forms second pair of potential barrier potential well period pair；
Continue second pair of potential barrier potential well period to upper deposition growing third to the potential barrier potential well period pair, and so on, it sinks The product n potential barrier potential well period pair of growth；
The quantity n in the potential barrier potential well period pair meets 2≤n≤30, the growth temperature of multi-quantum well luminescence layer Be 600 DEG C ~ 900 DEG C, InGaN potential well layer with a thickness of 0.5nm ~ 5nm, In group is divided into 15 ~ 20% in InGaN potential well layer, quasi- AlGaN alloy barrier layer with a thickness of 1-30nm；
The step of described growth InGaN potential well layer includes：During deposition growing is undoped with GaN, it is passed through TMIn （Trimethyl indium）InGaN potential well layer is formed, the flow of TMIn determines the component percentages of In；
The step of growth quasi- AlGaN alloy barrier layer specifically includes：
One layer of deposition growing is undoped with AlN layers on InGaN potential well layer, is not mixed undoped with deposition growing on AlN layer at this Miscellaneous GaN layer forms first layer circulation layer；
One layer of deposition growing is undoped with AlN layers in the layer of undoped gan in first layer circulation layer, this undoped with AlN Deposition growing layer of undoped gan on layer forms second layer circulation layer；
Continue the deposition growing third layer circulation layer on second layer circulation layer, and so on, m circulation layer of deposition growing；
The quantity m of the circulation layer meets 1≤m≤20, is with layer of undoped gan thickness ratio undoped with AlN layers 0.2-5 is divided into 10%-50% undoped with Al group in AlN layer 501；
The step of described growth layer of undoped gan includes：In NH3It is passed through the source Ga under atmosphere and generates undoped GaN layer；
The step of growth is undoped with AlN layers include：In NH3TMAl is passed through under atmosphere（Trimethyl aluminium）Formation is not mixed AlN layers miscellaneous, the flow of TMAl determines the component percentages of Al；
Step S4, the deposition growing p-type GaN layer in multi-quantum well luminescence layer；
The step of described growth P-type GaN layer include：During deposition growing is undoped with GaN, it is passed through MgCp2（Two Luxuriant magnesium）Form p-type GaN layer；
The growth temperature of p-type GaN layer is 800 DEG C ~ 1100 DEG C, p-type GaN layer with a thickness of 30 ~ 500nm, in p-type GaN layer Mg doping concentration is 1e18 ~ 2e20.
The present invention is by obtaining quasi- AlGaN alloy potential barrier using AlN and GaN material alternating growth in multi-quantum well luminescence layer Layer forms the good two-dimensional electron gas of electric property between the quasi- AlGaN alloy barrier layer and GaN layer of superlattices（2DEG）, should Two-dimensional electron gas structure will form higher electron concentration and higher electron mobility, and can effectively enhance the transverse direction of electronics Extended capability reduces the piezoelectricity field-effect of device itself, improves the injection efficiency of carrier, and then improves GaN base luminous two The luminous efficiency of pole pipe, while forward voltage can also be effectively reduced, utilize 200um × 500um size LED made of the present invention Device, in the case where 60mA tests electric current, forward voltage Vf reduces 0.05-0.1V.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (9)

1. a kind of GaN base light emitting epitaxial structure, which is characterized in that include：
The nucleating layer (2) being arranged on substrate (1)；
The layer of undoped gan (3) being arranged on nucleating layer (2)；
The N-type GaN layer (4) being arranged on layer of undoped gan (3)；
The multi-quantum well luminescence layer (5) being arranged on N-type GaN layer (4)；
And the p-type GaN layer (6) being arranged on multi-quantum well luminescence layer (5)；
The multi-quantum well luminescence layer (5) includes：The potential barrier potential well period pair of multiple superpositions, the potential barrier potential well period to comprising InGaN potential well layer (501) and the quasi- AlGaN alloy barrier layer (502) being arranged on InGaN potential well layer (501), the gesture of the bottom The potential well period is built to being arranged on N-type GaN layer (4), and the potential barrier potential well period of top is to upper setting p-type GaN layer (6), the gesture The quantity n for building the potential well period pair meets 2≤n≤30；
The quasi- AlGaN alloy barrier layer (502) includes：The circulation layer of multiple superpositions, the circulation layer include undoped with AlN layers (5021) exist with setting in the circulation layer setting undoped with the layer of undoped gan (5022) on AlN layers (5021), the bottom On InGaN potential well layer (501), p-type GaN layer (6) are set on the circulation layer of top, the quantity m of the circulation layer meet 1≤m≤ 20；
The InGaN potential well layer (501) with a thickness of 0.5nm~5nm, in InGaN potential well layer (501) In group be divided into 15~ 20%, the overall thickness of the quasi- AlGaN alloy barrier layer (502) is 1-30nm, undoped with AlN layers (5021) with it is undoped The thickness ratio of GaN layer (5022) is 0.2-5, is divided into 10%-50% undoped with Al group in AlN layers (5021).
2. GaN base light emitting epitaxial structure as described in claim 1, which is characterized in that the substrate (1) is using blue Jewel or GaN or silicon or silicon carbide；
The material of the nucleating layer (2) is undoped GaN, with a thickness of 15~50nm；
The overall thickness of the layer of undoped gan (3) and N-type GaN layer (4) is 1.5~8um, the Si of the N-type GaN layer (4) Doping concentration is 1e18~3e19；
The p-type GaN layer (6) with a thickness of 30~500nm, the Mg doping concentration of p-type GaN layer (6) is 1e18~2e20.
3. a kind of preparation method of the GaN base light emitting epitaxial structure as described in any one of claim 1-2, special Sign is, comprises the steps of：
Step S1, deposition growing nucleating layer on substrate；
Step S2, the deposition growing layer of undoped gan on nucleating layer, and N-type GaN layer is grown in layer of undoped gan；
Step S3, the deposition growing multi-quantum well luminescence layer in N-type GaN layer；
One layer of InGaN potential well layer of deposition growing in N-type GaN layer, the quasi- AlGaN alloy of deposition growing on the InGaN potential well layer Barrier layer forms first pair of potential barrier potential well period pair；
One layer of InGaN potential well layer of deposition growing on the quasi- AlGaN alloy barrier layer in first pair of potential barrier potential well period pair, at this The quasi- AlGaN alloy barrier layer of deposition growing on InGaN potential well layer forms second pair of potential barrier potential well period pair；
Continue second pair of potential barrier potential well period to upper deposition growing third to the potential barrier potential well period pair, and so on, deposition life The long n potential barrier potential well period pair；
The quantity n in the potential barrier potential well period pair meets 2≤n≤30；
The step of growth quasi- AlGaN alloy barrier layer specifically includes：
One layer of deposition growing is undoped with AlN layers on InGaN potential well layer, this undoped with deposition growing on AlN layer undoped with GaN Layer forms first layer circulation layer；
One layer of deposition growing is undoped with AlN layers in the layer of undoped gan in first layer circulation layer, this undoped on AlN layer Deposition growing layer of undoped gan forms second layer circulation layer；
Continue the deposition growing third layer circulation layer on second layer circulation layer, and so on, m circulation layer of deposition growing；
The quantity m of the circulation layer meets 1≤m≤20；
Step S4, the deposition growing p-type GaN layer in multi-quantum well luminescence layer.
4. the preparation method of GaN base light emitting epitaxial structure as claimed in claim 3, which is characterized in that it is described at The growth temperature of stratum nucleare is 400~700 DEG C；The growth temperature of the layer of undoped gan and N-type GaN layer is 800~1200 ℃；The growth temperature of the multi-quantum well luminescence layer is 600 DEG C~900 DEG C；The growth temperature of the p-type GaN layer is 800 DEG C~1100 DEG C.
5. the preparation method of GaN base light emitting epitaxial structure as claimed in claim 4, which is characterized in that the life The step of long layer of undoped gan includes：In NH3It is passed through the source Ga under atmosphere and generates undoped GaN layer.
6. the preparation method of GaN base light emitting epitaxial structure as claimed in claim 5, which is characterized in that the life The step of long N-type GaN layer includes：It is passed through SiH4- silane to adulterate to form N-type GaN layer, the Si doping concentration of N-type GaN layer is 1e18 ~3e19.
7. the preparation method of GaN base light emitting epitaxial structure as claimed in claim 6, which is characterized in that the life The step of long InGaN potential well layer includes：Be passed through TMIn and form InGaN potential well layer, in InGaN potential well layer In group be divided into 15~ 20%.
8. the preparation method of GaN base light emitting epitaxial structure as claimed in claim 7, which is characterized in that the life It is long undoped with AlN layers the step of include：In NH3It is passed through TMAl under atmosphere to be formed undoped with AlN layers, undoped with Al in AlN layer 501 Group is divided into 10%-50%.
9. the preparation method of GaN base light emitting epitaxial structure as claimed in claim 8, which is characterized in that the life The step of long p-type GaN layer includes：It is passed through MgCp2P-type GaN layer is formed, Mg doping concentration is 1e18~2e20 in p-type GaN layer.
CN201610723043.1A 2016-08-25 2016-08-25 A kind of GaN base light emitting epitaxial structure and preparation method thereof Expired - Fee Related CN106449914B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610723043.1A CN106449914B (en) 2016-08-25 2016-08-25 A kind of GaN base light emitting epitaxial structure and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610723043.1A CN106449914B (en) 2016-08-25 2016-08-25 A kind of GaN base light emitting epitaxial structure and preparation method thereof

Publications (2)

Publication Number Publication Date
CN106449914A CN106449914A (en) 2017-02-22
CN106449914B true CN106449914B (en) 2018-11-27

Family

ID=58181911

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610723043.1A Expired - Fee Related CN106449914B (en) 2016-08-25 2016-08-25 A kind of GaN base light emitting epitaxial structure and preparation method thereof

Country Status (1)

Country Link
CN (1) CN106449914B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108649108B (en) * 2018-05-15 2019-10-18 芜湖德豪润达光电科技有限公司 Mqw light emitting layer and light emitting diode and preparation method thereof
CN109166910B (en) * 2018-09-06 2020-07-14 中山大学 P-type AlGaN semiconductor material and epitaxial preparation method thereof
CN111477536A (en) * 2020-03-31 2020-07-31 华为技术有限公司 Semiconductor epitaxial structure and semiconductor device
CN114050208A (en) * 2021-11-11 2022-02-15 上海大学 Improved high electron mobility light emitting transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102368524A (en) * 2011-10-18 2012-03-07 中国科学院上海技术物理研究所 High-efficient GaN-based semiconductor light emitting diode
CN104505443A (en) * 2014-12-26 2015-04-08 聚灿光电科技(苏州)有限公司 GaN-based LED epitaxial structure and production method thereof
CN105932125A (en) * 2016-05-17 2016-09-07 太原理工大学 GaN-base green light LED epitaxial structure and preparation method therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000286448A (en) * 1999-03-31 2000-10-13 Toyoda Gosei Co Ltd Iii group nitride compound semiconductor luminous element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102368524A (en) * 2011-10-18 2012-03-07 中国科学院上海技术物理研究所 High-efficient GaN-based semiconductor light emitting diode
CN104505443A (en) * 2014-12-26 2015-04-08 聚灿光电科技(苏州)有限公司 GaN-based LED epitaxial structure and production method thereof
CN105932125A (en) * 2016-05-17 2016-09-07 太原理工大学 GaN-base green light LED epitaxial structure and preparation method therefor

Also Published As

Publication number Publication date
CN106449914A (en) 2017-02-22

Similar Documents

Publication Publication Date Title
CN107919416B (en) A kind of GaN base light emitting epitaxial structure and preparation method thereof
CN101645480B (en) Method for enhancing antistatic ability of GaN-based light-emitting diode
CN1156028C (en) Double heterojunction light emitting diode with gallium nitride active layer
CN106449914B (en) A kind of GaN base light emitting epitaxial structure and preparation method thereof
CN103066174A (en) Epitaxial structure and growing method for improving gallium nitride (GaN) based light-emitting diode (LED) lighting efficiency
CN103811601B (en) A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate
CN103730557A (en) Light-emitting diode with novel P-type electron barrier layer structure and growth method
CN103474539B (en) LED structure epitaxial growth method containing superlattice layer and structure thereof
CN103413877B (en) The growing method of epitaxial structure quantum well stress release layer and epitaxial structure thereof
CN105098004B (en) The growing method and epitaxial wafer of a kind of LED epitaxial slice
CN105449051B (en) One kind is using MOCVD technologies in GaN substrate or GaN/Al2O3The method that high brightness homogeneity LED is prepared in compound substrate
CN103560187B (en) LED structure epitaxial growth method containing superlattices barrier layer and structure thereof
CN205264741U (en) GaN -based LED epitaxial wafer
CN101257081A (en) Dual wavelength single chip LED
CN102064254A (en) High-quality gallium nitride light-emitting diode
CN102306691A (en) Method for raising light emitting diode luminescence efficiency
CN103413879A (en) LED epitaxial growth method and LED chip obtained through same
CN105161591B (en) A kind of GaN base epitaxial structure for reducing voltage and its growing method
CN101740668B (en) Light-emitting element
CN101281940A (en) GaN base quantum well LED epitaxial wafer as well as preparation method
CN105428477A (en) GaN-based LED epitaxial wafer and preparation method therefor
CN102368524A (en) High-efficient GaN-based semiconductor light emitting diode
CN104218125A (en) A method for white LED growth and the white LED prepared by utilizing the growth method
CN106784229B (en) A kind of duplex energy-saving LED semiconductor chip and the method for reducing power consumption
CN105098008A (en) GaN-based light-emitting diode (LED) epitaxy structure containing ternary superlattice and preparation method of GaN-based LED epitaxy structure

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20181127