CN111477730A - Light emitting diode with five-step quantum well and inverted V-shaped electron barrier layer - Google Patents
Light emitting diode with five-step quantum well and inverted V-shaped electron barrier layer Download PDFInfo
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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Abstract
The invention discloses a light-emitting diode with a five-step quantum well and an inverted V-shaped electron barrier layer, which comprises a sapphire substrate, wherein n-Al is sequentially grown on the top end of the sapphire substrate from bottom to top0.6Ga0.4N layer, multi-quantum well active region, p-AlxGa0.18N-electron blocking layer, p-Al0.6Ga0.4N layer, p-GaN ohmic contact layer, p-AlxGa0.18The N electron blocking layer is an inverted V-shaped electron blocking layer, the inverted V-shaped electron blocking layer is averagely divided into two layers, the lower Al component x is gradually changed from 0.57 to 0.82 from bottom to top, and the upper Al component x is gradually changed from 0.82 to 0.57 from bottom to top. The invention uses five step quantum well and inverted V-shaped electronic resistorThe barrier layer structure simultaneously acts to improve the radiation recombination efficiency of the light-emitting diode.
Description
Technical Field
The invention belongs to the technical field of light emitting diodes, and particularly relates to a light emitting diode with a five-step quantum well and an inverted V-shaped electron barrier layer.
Background
However, the AlGaN-based deep ultraviolet L ED has a very strong polarized electric field, which causes band bending, which leads to a low overlap ratio of electron and hole wave functions, reduces the limitation of an electron blocking layer on electrons and causes a certain blocking barrier to holes, and hinders the injection of holes into an active region, so that the radiation coupling efficiency of L ED is reduced.
Therefore, how to provide a light emitting diode with a five-step quantum well and an inverted V-shaped electron blocking layer is a problem to be solved urgently by those skilled in the art.
Disclosure of Invention
In view of this, the invention provides a light emitting diode with a five-step quantum well and an inverted V-shaped electron blocking layer, which improves the radiative recombination efficiency of the light emitting diode through the simultaneous action of the five-step quantum well and the inverted V-shaped electron blocking layer structure.
In order to achieve the purpose, the invention adopts the following technical scheme:
a light emitting diode with a five-step quantum well and an inverted V-shaped electron blocking layer, comprising: the sapphire substrate is characterized in that n-Al is sequentially grown on the top end of the sapphire substrate from bottom to top0.6Ga0.4N layer, multi-quantum well active region, p-AlxGa0.18N-electron blocking layer, p-Al0.6Ga0.4N layer, p-GaN ohmic contact layer, the p-AlxGa0.18The N electron blocking layer is an inverted V-shaped electron blocking layerThe layer is divided into two layers averagely, the lower layer Al component x is gradually changed from 0.57 to 0.82 from bottom to top, and the upper layer Al component x is gradually changed from 0.82 to 0.57 from bottom to top.
Preferably, the multiple quantum well active region comprises 5 Al layers with thickness of 2nm0.5Ga0.5N five step quantum well, 5 pieces of 2nm thick Al0.5Ga0.5The N five-step quantum well is respectively coated with 6 10nm thick Al0.6Ga0.4The N quantum barriers are separated.
Preferably, Al0.5Ga0.5The N five-step quantum well comprises 0.3nm thick Al which is arranged from bottom to top in sequence0.55Ga0.45N, 0.4nm thick Al0.5Ga0.5N, 0.6nm thick Al0.45Ga0.55N, 0.4nm thick Al0.5Ga0.5N, 0.3nm thick Al0.55Ga0.45N。
Preferably, the n-Al0.6Ga0.4The thickness of the N layer is 3 μm, and the N-type doping concentration is 5 × 1018cm-3。
Preferably, the p-AlxGa0.18The thickness of the N electron blocking layer is 20nm, and the p-type doping concentration is 1 × 1019cm-3。
Preferably, the p-Al0.6Ga0.4The thickness of the N layer is 20nm, and the p-type doping concentration is 2 × 1019cm-3。
Preferably, the thickness of the p-GaN ohmic contact layer is 100nm, and the p-type doping concentration is 2 × 1019cm-3。
Preferably, the change of the composition x of the lower layer Al and the upper layer Al of the inverted V-shaped electron blocking layer are both linear changes.
A preparation method of a light-emitting diode with a five-step quantum well and an inverted V-shaped electron barrier layer comprises the following steps:
(1) selecting a sapphire substrate, and growing a layer of n-Al with the thickness of 3 mu m on the sapphire substrate in a hydrogen atmosphere at the temperature of 1000-1200 DEG C0.6Ga0.4N layers;
(2) under the nitrogen atmosphere and at the temperature of 800-1000 ℃, under the condition of n-Al0.6Ga0.4N layerGrowing a multi-quantum well active region;
(3) growing a layer of p-Al on the multi-quantum well active region in a nitrogen atmosphere at the temperature of 1000-xGa0.18N-electron blocking layer, p-AlxGa0.18The N electron blocking layer is divided into two layers averagely, the lower layer Al component x is gradually changed from 0.57 to 0.82 from bottom to top, and the upper layer Al component x is gradually changed from 0.82 to 0.57 from bottom to top;
(4) under hydrogen atmosphere at a temperature of 800-1000 ℃ in p-AlxGa0.18Growing p-Al with the thickness of 20nm on the N electron blocking layer0.6Ga0.4N layer, p-Al0.6Ga0.4And a p-GaN ohmic contact layer with the thickness of 100nm is grown on the N layer.
Preferably, the multiple quantum well active region comprises 5 Al layers 2nm thick0.5Ga0.5N five step quantum well, 5 pieces of 2nm thick Al0.5Ga0.5The N five-step quantum well is respectively coated with 6 10nm thick Al0.6Ga0.4The N quantum barriers are separated.
The invention has the beneficial effects that:
the invention adopts the five-step quantum well, improves the energy band bending caused by the polarization effect, and improves the overlapping rate of electron and hole wave functions; the inverted V-shaped electron blocking layer improves the uppermost Al layer caused by polarization effect0.6Ga0.4N quantum barrier or p-AlxGa0.18The energy band before the interface of the N electron blocking layer is bent, so that the limiting effect of electrons is enhanced, and the blocking of holes is weakened. The five-step quantum well and the inverted V-shaped electron barrier layer structure simultaneously act to improve the radiation recombination efficiency of the light-emitting diode.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of the present invention.
Fig. 2 is a schematic structural diagram of a multiple quantum well active region according to the present invention.
Fig. 3 is a schematic diagram of a five-step quantum well of the present invention.
FIG. 4 is a p-Al alloy according to the present inventionxGa0.18Schematic diagram of an N-electron blocking layer.
Wherein, in the figure,
1. a sapphire substrate; 2. n-Al0.6Ga0.4N layers; 3. a multiple quantum well active region; 4. p-AlxGa0.18An N electron blocking layer; 5. p-Al0.6Ga0.4N layers; 6. a p-GaN ohmic contact layer; 7. al (Al)0.5Ga0.5N five step-shaped quantum wells; 8. al (Al)0.6Ga0.4An N quantum barrier; 9. a P-side electrode; 10. and an N-face electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1-4, the present invention provides a light emitting diode with a five-step quantum well and an inverted V-shaped electron blocking layer, comprising: the sapphire substrate 1 is characterized in that n-Al is sequentially grown on the top end of the sapphire substrate 1 from bottom to top0.6Ga0.4N layer 2, multiple quantum well active region 3, p-AlxGa0.18N-Electron Barrier layer 4, p-Al0.6Ga0.4N layer 5, p-GaN ohmic contact layer 6, p-AlxGa0.18The N electron blocking layer 4 is an inverted V-shaped electron blocking layer which is averagely divided into two layers, wherein the lower Al component x gradually changes from 0.57 to 0.82 from bottom to top, and the upper Al component x gradually changes from 0.82 to 0.57 from bottom to top. The top end of the P-GaN ohmic contact layer 6 is connected with a P-surface electrode 9, n-Al0.6Ga0.4The N layer 2 is connected to an N-face electrode 10.
The multiple quantum well active region 3 comprises 5 Al layers with a thickness of 2nm0.5Ga0.5N five-step quantum well 7, 5 Al with thickness of 2nm0.5Ga0.5The N five-step quantum well 7 is respectively coated with 6 10nm thick Al0.6Ga0.4The N quantum barriers 8 are spaced apart.
Wherein, Al0.5Ga0.5The N five-step quantum well 7 comprises 0.3nm thick Al which is arranged from bottom to top in sequence0.55Ga0.45N, 0.4nm thick Al0.5Ga0.5N, 0.6nm thick Al0.45Ga0.55N, 0.4nm thick Al0.5Ga0.5N, 0.3nm thick Al0.55Ga0.45N。
In order to further optimize the technical scheme, n-Al0.6Ga0.4The thickness of the N layer 2 is 3 μm, and the N-type doping concentration is 5 × 1018cm-3。
To further optimize the above technical solution, p-AlxGa0.18The thickness of the N electron blocking layer 4 is 20nm, and the p-type doping concentration is 1 × 1019cm-3。
To further optimize the above technical solution, p-Al0.6Ga0.4The N layer 5 has a thickness of 20nm and a p-type doping concentration of 2 × 1019cm-3。
In order to further optimize the technical scheme, the thickness of the p-GaN ohmic contact layer 6 is 100nm, and the p-type doping concentration is 2 × 1019cm-3。
In order to further optimize the technical scheme, the change of the components x of the lower layer Al and the upper layer Al of the inverted V-shaped electron blocking layer are linear changes.
Example 2
The invention also provides a preparation method of the light-emitting diode with the five-step quantum well and the inverted V-shaped electron barrier layer, which adopts a Metal Organic Chemical Vapor Deposition (MOCVD) method and comprises the following steps:
(1) selecting a sapphire substrate 1, and growing a layer of thickness on the sapphire substrate 1 in a hydrogen atmosphere at the temperature of 1000-1200 DEG Cn-Al of degree 3 μm0.6Ga0.4N layer 2, dopant Si, concentration 5 × 1018cm-3。
(2) Under the nitrogen atmosphere and at the temperature of 800-1000 ℃, under the condition of n-Al0.6Ga0.4A multi-quantum well active region 3 grows on the N layer 2; wherein the multiple quantum well active region 3 comprises 5 Al layers with a thickness of 2nm0.5Ga0.5N five step quantum well 7, Al0.5Ga0.5N five-step quantum well 7 with 5 periods and 5 Al with the thickness of 2nm0.5Ga0.5The N five-step quantum well 7 is respectively coated with 6 10nm thick Al0.6Ga0.4The N quantum barriers 8 are spaced apart.
(3) Growing a layer of p-Al on the multiple quantum well active region 3 in the nitrogen atmosphere at the temperature of 1000-xGa0.18N-electron blocking layer 4, p-AlxGa0.18The N electron blocking layer 4 is divided into two layers on average, the lower Al component x is gradually changed from 0.57 to 0.82 from bottom to top, and the upper Al component x is gradually changed from 0.82 to 0.57 from bottom to top. p-AlxGa0.18The dopant of the N electron blocking layer 4 is Mg with the concentration of 1 × 1019cm-3。
(4) Under hydrogen atmosphere at a temperature of 800-1000 ℃ in p-AlxGa0.18p-Al with the thickness of 20nm is grown on the N electron blocking layer 40.6Ga0.4N layer 5, p-Al0.6Ga0.4And a p-GaN ohmic contact layer 6 with the thickness of 100nm is grown on the N layer 5. p-Al0.6Ga0.4N layer 5 dopant is Mg at a concentration of 2 × 1019cm-3The p-GaN ohmic contact layer 6 has Mg as dopant and concentration of 2 × 1019cm-3。
The invention adopts the five-step quantum well, improves the energy band bending caused by the polarization effect, and improves the overlapping rate of electron and hole wave functions; the inverted V-shaped electron blocking layer improves the uppermost Al layer caused by polarization effect0.6Ga0.4N quantum barrier 8 or p-AlxGa0.18The energy band before the interface of the N electronic blocking layer 4 is bent, so that the limiting effect of electrons is enhanced, and the blocking of holes is weakened. Five-step quantum well and inverted V-shaped electron barrier layer structure simultaneously act to improve the radiation of the light-emitting diodeThe AlGaN-based 280nm L ED device structure can emit 280nm deep ultraviolet L ED, and can be used in the fields of sterilization, disinfection, biochemical detection, safe communication, ultraviolet curing, white light solid-state illumination, energy, military detection and the like.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A light emitting diode with a five-step quantum well and an inverted V-shaped electron blocking layer, comprising: the sapphire substrate is characterized in that n-Al is sequentially grown on the top end of the sapphire substrate from bottom to top0.6Ga0.4N layer, multi-quantum well active region, p-AlxGa0.18N-electron blocking layer, p-Al0.6Ga0.4N layer, p-GaN ohmic contact layer, the p-AlxGa0.18The N electron blocking layer is an inverted V-shaped electron blocking layer, the inverted V-shaped electron blocking layer is averagely divided into two layers, the lower Al component x is gradually changed from 0.57 to 0.82 from bottom to top, and the upper Al component x is gradually changed from 0.82 to 0.57 from bottom to top.
2. The light emitting diode with five-step quantum well and inverted-V electron barrier layer as claimed in claim 1, wherein said multiple quantum well is formed by a single quantum well and a single quantum well, and wherein said multiple quantum well is formed by multiple quantum wells and multiple quantum wells are formed by multiple quantum wells and multiple electron barriersThe active region comprises 5 Al layers 2nm thick0.5Ga0.5N five step quantum well, 5 pieces of 2nm thick Al0.5Ga0.5The N five-step quantum well is respectively coated with 6 10nm thick Al0.6Ga0.4The N quantum barriers are separated.
3. The light-emitting diode with the five-step quantum well and the inverted-V electron blocking layer as claimed in claim 2, wherein Al is0.5Ga0.5The N five-step quantum well comprises 0.3nm thick Al which is arranged from bottom to top in sequence0.55Ga0.45N, 0.4nm thick Al0.5Ga0.5N, 0.6nm thick Al0.45Ga0.55N, 0.4nm thick Al0.5Ga0.5N, 0.3nm thick Al0.55Ga0.45N。
4. The light-emitting diode with the five-step quantum well and the inverted-V electron blocking layer as claimed in claim 1, wherein the n-Al is0.6Ga0.4The thickness of the N layer is 3 μm, and the N-type doping concentration is 5 × 1018cm-3。
5. The light-emitting diode with the five-step quantum well and the inverted-V electron blocking layer as claimed in claim 1, wherein the p-Al isxGa0.18The thickness of the N electron blocking layer is 20nm, and the p-type doping concentration is 1 × 1019cm-3。
6. The light-emitting diode with the five-step quantum well and the inverted-V electron blocking layer as claimed in claim 1, wherein the p-Al is0.6Ga0.4The thickness of the N layer is 20nm, and the p-type doping concentration is 2 × 1019cm-3。
7. The light-emitting diode with the five-step quantum well and the inverted-V electron barrier layer as claimed in claim 1, wherein the p-GaN ohmic contact layer has a thickness of 100nm and a p-type doping concentration of2×1019cm-3。
8. The light-emitting diode with the five-step quantum well and the inverted-V electron blocking layer as claimed in claim 1, wherein the change of the composition x of the lower Al layer and the upper Al layer of the inverted-V electron blocking layer is linear change.
9. A preparation method of a light-emitting diode with a five-step quantum well and an inverted V-shaped electronic barrier layer is characterized by comprising the following steps:
(1) selecting a sapphire substrate, and growing a layer of n-Al with the thickness of 3 mu m on the sapphire substrate in a hydrogen atmosphere at the temperature of 1000-1200 DEG C0.6Ga0.4N layers;
(2) under the nitrogen atmosphere and at the temperature of 800-1000 ℃, under the condition of n-Al0.6Ga0.4Growing a multi-quantum well active region on the N layer;
(3) growing a layer of p-Al on the multi-quantum well active region in a nitrogen atmosphere at the temperature of 1000-xGa0.18N-electron blocking layer, p-AlxGa0.18The N electron blocking layer is divided into two layers averagely, the lower layer Al component x is gradually changed from 0.57 to 0.82 from bottom to top, and the upper layer Al component x is gradually changed from 0.82 to 0.57 from bottom to top;
(4) under hydrogen atmosphere at a temperature of 800-1000 ℃ in p-AlxGa0.18Growing p-Al with the thickness of 20nm on the N electron blocking layer0.6Ga0.4N layer, p-Al0.6Ga0.4And a p-GaN ohmic contact layer with the thickness of 100nm is grown on the N layer.
10. The method of claim 9, wherein said multiple quantum well active region comprises 5 Al layers 2nm thick in thickness0.5Ga0.5N five step quantum well, 5 pieces of 2nm thick Al0.5Ga0.5The N five-step quantum well is respectively coated with 6 10nm thick Al0.6Ga0.4The N quantum barriers are separated.
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