CN111477731B - Light emitting diode with five-step quantum well and triangular electron barrier layer - Google Patents
Light emitting diode with five-step quantum well and triangular electron barrier layer Download PDFInfo
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- 230000004888 barrier function Effects 0.000 title claims abstract description 31
- 230000000903 blocking effect Effects 0.000 claims abstract description 40
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 15
- 239000010980 sapphire Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
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- 239000012299 nitrogen atmosphere Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
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- 238000002360 preparation method Methods 0.000 claims description 3
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- 230000009471 action Effects 0.000 abstract description 2
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- 238000010586 diagram Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
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- 239000000243 solution Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
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- 238000001514 detection method Methods 0.000 description 2
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a light-emitting diode with a five-step quantum well and a triangular electron barrier layer, which comprises a sapphire substrate, wherein n-Al is sequentially grown on the top end of the sapphire substrate from bottom to top 0.6 Ga 0.4 N layer, multi-quantum well active region, p-Al x Ga 0.18 N-electron blocking layer, p-Al 0.6 Ga 0.4 N layer, p-GaN ohmic contact layer, p-Al x Ga 0.18 The N electron blocking layer is a triangular electron blocking layer, and the Al component x of the triangular electron blocking layer is gradually changed from 0.57 to 0.82 from bottom to top. The invention improves the radiation recombination efficiency of the light-emitting diode by the simultaneous action of the five-step quantum well and the triangular electron barrier layer structure.
Description
Technical Field
The invention belongs to the technical field of light emitting diodes, and particularly relates to a light emitting diode with a five-step quantum well and a triangular electron barrier layer.
Background
At present, the AlGaN-based deep ultraviolet LED field is rapidly developed, and the deep ultraviolet LED shows very important technical application value in many aspects. However, the AlGaN-based deep ultraviolet LED has a very strong polarization electric field, which causes band bending, which causes a low overlap ratio of electron and hole wave functions; the limitation of the electron blocking layer to electrons is reduced, a certain blocking potential barrier is caused to holes, the injection of the holes into the active region is blocked, and the radiation integration efficiency of the LED is reduced.
Therefore, how to provide a light emitting diode with a five-step quantum well and a triangular electron blocking layer is a problem that needs to be solved urgently by those skilled in the art.
Disclosure of Invention
In view of this, the invention provides a light emitting diode with a five-step quantum well and a triangular electron blocking layer, and the radiation recombination efficiency of the light emitting diode is improved by the simultaneous action of the five-step quantum well and the triangular electron blocking layer.
In order to achieve the purpose, the invention adopts the following technical scheme:
a light emitting diode with a five-step quantum well and a triangular electron blocking layer, comprising: the sapphire substrate is characterized in that n-Al is sequentially grown on the top end of the sapphire substrate from bottom to top 0.6 Ga 0.4 N layer, multiple quantum well active region, and p-Al x Ga 0.18 N-electron blocking layer, p-Al 0.6 Ga 0.4 N layer, p-GaN ohmic contact layer, the p-Al x Ga 0.18 The N electron blocking layer is a triangular electron blocking layer, and the component x of the triangular electron blocking layer Al is gradually changed from 0.57 to 0.82 from bottom to top.
Preferably, the multiple quantum well active region comprises 5 Al layers with thickness of 2nm 0.5 Ga 0.5 N five step quantum well, 5 pieces of 2nm thick Al 0.5 Ga 0.5 The N five-step quantum well is respectively coated with 6 10nm thick Al 0.6 Ga 0.4 The N quantum barriers are separated.
Preferably, al 0.5 Ga 0.5 The N five-step quantum well comprises 0.3nm thick Al which is arranged from bottom to top in sequence 0.55 Ga 0.45 N, 0.4nm thick Al 0.5 Ga 0.5 N, 0.6nm thick Al 0.45 Ga 0.55 N, 0.4nm thick Al 0.5 Ga 0.5 N, 0.3nm thick Al 0.55 Ga 0.45 N。
Preferably, theThe above-mentioned n-Al 0.6 Ga 0.4 The thickness of the N layer is 3 μm, and the N-type doping concentration is 5 × 10 18 cm -3 。
Preferably, the p-Al x Ga 0.18 The thickness of the N electronic barrier layer is 20nm, and the p-type doping concentration is 1 multiplied by 10 19 cm -3 。
Preferably, the p-Al 0.6 Ga 0.4 The thickness of the N layer is 20nm, and the p-type doping concentration is 2 x 10 19 cm -3 。
Preferably, the p-GaN ohmic contact layer has a thickness of 100nm and a p-type doping concentration of 2 x 10 19 cm -3 。
Preferably, the change in the composition x of the triangular electron blocking layer Al is a linear change.
A preparation method of a light-emitting diode with a five-step quantum well and a triangular electron barrier layer comprises the following steps:
(1) Selecting a sapphire substrate, and growing a layer of n-Al with the thickness of 3 mu m on the sapphire substrate at the temperature of 1000-1200 ℃ in hydrogen atmosphere 0.6 Ga 0.4 N layers;
(2) Under the nitrogen atmosphere and at the temperature of 800-1000 ℃, in n-Al 0.6 Ga 0.4 Growing a multi-quantum well active region on the N layer;
(3) Growing a layer of p-Al on the active region of the multiple quantum well in the nitrogen atmosphere at the temperature of 1000-1200 DEG C x Ga 0.18 N-electron blocking layer, p-Al x Ga 0.18 The component x of the N electron barrier layer Al is gradually changed from 0.57 to 0.82 from bottom to top;
(4) In a hydrogen atmosphere at a temperature of 800-1000 ℃ in p-Al x Ga 0.18 Growing p-Al with the thickness of 20nm on the N electron blocking layer 0.6 Ga 0.4 N layer, p-Al 0.6 Ga 0.4 And a p-GaN ohmic contact layer with the thickness of 100nm is grown on the N layer.
Preferably, the multiple quantum well active region comprises 5 Al layers 2nm thick 0.5 Ga 0.5 N five step quantum well, 5 pieces of 2nm thick Al 0.5 Ga 0.5 The N five-step quantum well is respectively coated with 6 10nm thick Al 0.6 Ga 0.4 The N quantum barriers are separated.
The invention has the beneficial effects that:
the five-step quantum well is adopted, so that the energy band bending caused by the polarization effect is improved, and the overlapping rate of electron and hole wave functions is improved; the triangular electron blocking layer improves the uppermost Al caused by polarization effect 0.6 Ga 0.4 N quantum barrier or p-Al x Ga 0.18 The energy band before the interface of the N electron blocking layer is bent, so that the limiting effect of electrons is enhanced, and the blocking of holes is weakened. The five-step quantum well and the triangular electronic barrier layer structure simultaneously act to improve the radiation recombination efficiency of the light-emitting diode.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of the present invention.
Fig. 2 is a schematic structural diagram of a multiple quantum well active region according to the present invention.
Fig. 3 is a schematic diagram of a five-step quantum well of the present invention.
FIG. 4 is a p-Al alloy according to the present invention x Ga 0.18 Schematic diagram of an N-electron blocking layer.
Wherein, in the figure,
1. a sapphire substrate; 2. n-Al 0.6 Ga 0.4 N layers; 3. a multiple quantum well active region; 4. p-Al x Ga 0.18 An N electron blocking layer; 5. p-Al 0.6 Ga 0.4 N layers; 6. a p-GaN ohmic contact layer; 7. al (Al) 0.5 Ga 0.5 N five step-shaped quantum wells; 8. al (Al) 0.6 Ga 0.4 An N quantum barrier; 9. a P-side electrode; 10. and an N-face electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1-4, the present invention provides a light emitting diode with a five-step quantum well and a triangular electron blocking layer, comprising: the sapphire substrate 1 is characterized in that n-Al is sequentially grown on the top end of the sapphire substrate 1 from bottom to top 0.6 Ga 0.4 N layer 2, multiple quantum well active region 3, p-Al x Ga 0.18 N-Electron Barrier layer 4, p-Al 0.6 Ga 0.4 N layer 5, p-GaN ohmic contact layer 6, p-Al x Ga 0.18 The N electron blocking layer 4 is a triangular electron blocking layer, and the component x of the triangular electron blocking layer Al is gradually changed from 0.57 to 0.82 from bottom to top. The top end of the P-GaN ohmic contact layer 6 is connected with a P-surface electrode 9 0.6 Ga 0.4 The N-layer 2 is connected to an N-face electrode 10.
The multiple quantum well active region 3 comprises 5 Al layers with a thickness of 2nm 0.5 Ga 0.5 N five step quantum well 7,5 Al 2nm thick 0.5 Ga 0.5 The N five-step quantum well 7 is respectively coated with 6 10nm thick Al 0.6 Ga 0.4 The N quantum barriers 8 are spaced apart.
Wherein, al 0.5 Ga 0.5 The N five-step quantum well 7 comprises 0.3nm thick Al which is arranged from bottom to top in sequence 0.55 Ga 0.45 N, 0.4nm thick Al 0.5 Ga 0.5 N, 0.6nm thick Al 0.45 Ga 0.55 N, 0.4nm thick Al 0.5 Ga 0.5 N, 0.3nm thick Al 0.55 Ga 0.45 N。
In order to further optimize the technical scheme, n-Al 0.6 Ga 0.4 The thickness of the N layer 2 is 3 μm, and the N-type doping concentration is 5X 10 18 cm -3 。
To further optimize the above technical solution, p-Al x Ga 0.18 The thickness of the N electron blocking layer 4 is 20nm, and the p-type doping concentration is 1 multiplied by 10 19 cm -3 。
To further optimize the above technical solution, p-Al 0.6 Ga 0.4 The N layer 5 had a thickness of 20nm and a p-type doping concentration of 2X 10 19 cm -3 。
In order to further optimize the technical scheme, the thickness of the p-GaN ohmic contact layer 6 is 100nm, the p-type doping concentration is 2 multiplied by 10 19 cm -3 。
In order to further optimize the technical scheme, the change of the component x of the triangular electron blocking layer Al is linear change.
Example 2
The invention also provides a preparation method of the light-emitting diode with the five-step quantum well and the triangular electronic barrier layer, which adopts a Metal Organic Chemical Vapor Deposition (MOCVD) method and comprises the following steps:
(1) Selecting a sapphire substrate 1, and growing a layer of n-Al with the thickness of 3 mu m on the sapphire substrate 1 in a hydrogen atmosphere at the temperature of 1000-1200 DEG C 0.6 Ga 0.4 N layer 2, dopant Si, concentration 5X 10 18 cm -3 。
(2) Under the nitrogen atmosphere and at the temperature of 800-1000 ℃, in n-Al 0.6 Ga 0.4 A multi-quantum well active region 3 grows on the N layer 2; wherein, the multiple quantum well active region 3 comprises 5 Al layers with thickness of 2nm 0.5 Ga 0.5 N five step type quantum well 7, al 0.5 Ga 0.5 N five-step quantum well 7 with 5 periods and 5 Al with the thickness of 2nm 0.5 Ga 0.5 The N five-step quantum well 7 is respectively coated with 6 10nm thick Al 0.6 Ga 0.4 The N quantum barriers 8 are spaced apart.
(3) Growing a layer of p-Al on the multiple quantum well active region 3 in a nitrogen atmosphere at a temperature of 1000-1200 DEG C x Ga 0.18 N-electron blocking layer 4, p-Al x Ga 0.18 The composition x of Al in the N-electron blocking layer 4 is gradually changed from 0.57 to 0.82 from bottom to top. p-Al x Ga 0.18 The N electron barrier layer 4 dopant is Mg with the concentration of 1 × 10 19 cm -3 。
(4) In a hydrogen atmosphere at a temperature of 800-1000 ℃ in p-Al x Ga 0.18 p-Al with the thickness of 20nm is grown on the N electron blocking layer 4 0.6 Ga 0.4 N layer 5, p-Al 0.6 Ga 0.4 And a p-GaN ohmic contact layer 6 with the thickness of 100nm is grown on the N layer 5. p-Al 0.6 Ga 0.4 N layer 5 dopant is Mg at a concentration of 2X 10 19 cm -3 (ii) a The p-GaN ohmic contact layer 6 dopant is Mg with a concentration of 2 x 10 19 cm -3 。
The five-step quantum well is adopted, so that the energy band bending caused by the polarization effect is improved, and the overlapping rate of electron and hole wave functions is improved; the triangular electron blocking layer improves the uppermost Al layer caused by polarization effect 0.6 Ga 0.4 N quantum barrier 8 or p-Al x Ga 0.18 The energy band before the interface of the N electronic blocking layer 4 is bent, so that the limiting effect of electrons is enhanced, and the blocking of holes is weakened. The five-step quantum well and the triangular electron barrier layer structure simultaneously act to improve the radiation recombination efficiency of the light-emitting diode. The AlGaN-based 280nm LED device structure can emit a deep ultraviolet LED with the wavelength of 280nm, and can be used in the fields of sterilization, disinfection, biochemical detection, safe communication, ultraviolet curing, white light solid-state illumination, energy, military detection and the like.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A light emitting diode with five-step quantum well and triangular electron barrier layer structure, comprising: the sapphire substrate is characterized in that n-Al is grown on the top end of the sapphire substrate from bottom to top in sequence 0.6 Ga 0.4 N layer, multi-quantum well active region, p-Al x Ga 0.18 N-Electron blocking layer, p-Al 0.6 Ga 0.4 N layer, p-GaN ohmic contact layer, the p-Al x Ga 0.18 The N electron blocking layer is a triangular electron blocking layer, and the component x of the triangular electron blocking layer Al is gradually changed from 0.57 to 0.82 from bottom to top;
the multiple quantum well active region comprises 5 pieces of Al with the thickness of 2nm 0.5 Ga 0.5 N five step quantum well, 5 pieces of 2nm thick Al 0.5 Ga 0.5 The N five-step quantum well is respectively coated with 6 10nm thick Al 0.6 Ga 0.4 Separating N quantum barriers;
Al 0.5 Ga 0.5 the N five-step quantum well comprises 0.3nm thick Al which is arranged from bottom to top in sequence 0.55 Ga 0.45 N, 0.4nm thick Al 0.5 Ga 0.5 N, 0.6nm thick Al 0.45 Ga 0.55 N, 0.4nm thick Al 0.5 Ga 0.5 N, 0.3nm thick Al 0.55 Ga 0.45 N。
2. The light-emitting diode with the five-step quantum well and triangular electron barrier structure as claimed in claim 1, wherein the n-Al is selected from the group consisting of 0.6 Ga 0.4 The thickness of the N layer is 3 μm, and the N-type doping concentration is 5 × 10 18 cm -3 。
3. The light-emitting diode with the five-step quantum well and triangular electron barrier structure as claimed in claim 1, wherein the p-Al is x Ga 0.18 The thickness of the N electronic barrier layer is 20nm, and the p-type doping concentration is 1 multiplied by 10 19 cm -3 。
4. The light-emitting diode with the five-step quantum well and triangular electron barrier layer structure as claimed in claim 1, wherein the p-Al is p-Al 0.6 Ga 0.4 The thickness of the N layer is 20nm, and the p-type doping concentration is 2 multiplied by 10 19 cm -3 。
5. The light-emitting diode with the five-step quantum well and triangular electron barrier layer structure as claimed in claim 1, wherein the p-GaN ohmic contact layer has a thickness of 100nm and a p-type doping concentration of 2 x 10 19 cm -3 。
6. The light-emitting diode with the five-step quantum well and triangular electron barrier structure as claimed in claim 1, wherein the change of the composition x of the triangular electron barrier Al is linear.
7. A preparation method of a light-emitting diode with a five-step quantum well and a triangular electronic barrier layer structure is characterized by comprising the following steps:
(1) Selecting a sapphire substrate, and growing a layer of n-Al with the thickness of 3 mu m on the sapphire substrate at the temperature of 1000-1200 ℃ in hydrogen atmosphere 0.6 Ga 0.4 N layers;
(2) Under the nitrogen atmosphere and at the temperature of 800-1000 ℃, in n-Al 0.6 Ga 0.4 Growing a multi-quantum well active region on the N layer;
(3) Growing a layer of p-Al on the active region of the multiple quantum well in the nitrogen atmosphere at the temperature of 1000-1200 DEG C x Ga 0.18 N-electron blocking layer, p-Al x Ga 0.18 The component x of the N electron blocking layer Al is gradually changed from 0.57 to 0.82 from bottom to top;
(4) In a hydrogen atmosphere at a temperature of 800-1000 deg.C in p-Al x Ga 0.18 Growing p-Al with the thickness of 20nm on the N electron barrier layer 0.6 Ga 0.4 N layer, p-Al 0.6 Ga 0.4 A p-GaN ohmic contact layer with the thickness of 100nm is grown on the N layer;
said pluralityThe quantum well active region comprises 5 2nm thick Al 0.5 Ga 0.5 N five step quantum well, 5 pieces of 2nm thick Al 0.5 Ga 0.5 The N five-step quantum well is respectively coated with 6 10nm thick Al 0.6 Ga 0.4 N quantum barrier separation;
Al 0.5 Ga 0.5 the N five-step quantum well comprises 0.3nm thick Al which is arranged from bottom to top in sequence 0.55 Ga 0.45 N, 0.4nm thick Al 0.5 Ga 0.5 N, 0.6nm thick Al 0.45 Ga 0.55 N, 0.4nm thick Al 0.5 Ga 0.5 N, 0.3nm thick Al 0.55 Ga 0.45 N。
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