CN106992233A - Reversed polarity ultraviolet LED epitaxial structure and preparation method thereof - Google Patents
Reversed polarity ultraviolet LED epitaxial structure and preparation method thereof Download PDFInfo
- Publication number
- CN106992233A CN106992233A CN201710241337.5A CN201710241337A CN106992233A CN 106992233 A CN106992233 A CN 106992233A CN 201710241337 A CN201710241337 A CN 201710241337A CN 106992233 A CN106992233 A CN 106992233A
- Authority
- CN
- China
- Prior art keywords
- type
- layers
- high temperature
- algan
- ultraviolet led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 230000012010 growth Effects 0.000 claims abstract description 57
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 230000001934 delay Effects 0.000 claims 1
- 230000005685 electric field effect Effects 0.000 abstract description 3
- 230000007773 growth pattern Effects 0.000 abstract description 3
- 230000010287 polarization Effects 0.000 abstract description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of reversed polarity ultraviolet LED epitaxial structure and preparation method thereof, and the reversed polarity ultraviolet LED epitaxial structure includes successively from bottom to top：Substrate, AlN epitaxial buffer layers, AlGaN layer, p-type AlvGa(1‑v)N：Mg contact layers, AlN layers of p-type, the p-type Al of Al content gradually variationalsxGa(1‑x)N barrier layer, AlInGaN/AlGaN MQW superlattices luminescent layers, N-type AlyGa(1‑y)N layers, N-type AlwGa(1‑w)N contact layers.The present invention is by changing epitaxial structures and succession of traditional LED along substrate from N-type SQW to p-type, it is set to be changed to p-type AlGaN mqw light emitting layers to N-type AlGaN growth pattern, and then additional power plant when making operation and polarization power plant in SQW are in opposite direction, that improves carrier meets efficiency, while p-type p-type AlxGa(1‑x)N layers of Al components X fades to numerical value more than 0 along epitaxial growth direction from 1, and producing p-shaped using polarized electric field effect mixes, and further solves the problem of p-shaped mixes difficulty.
Description
Technical field
The present invention relates to technical field of semiconductor luminescence, more particularly to a kind of reversed polarity ultraviolet LED epitaxial structure and
Its preparation method.
Background technology
Deep ultraviolet aluminum gallium nitride based light emitting diode（Light-EmittingDiode, LED）It is used as a kind of efficient, environmental protection
With green New Solid lighting source, have the advantages that small volume, lightweight, long lifespan, reliability are high and it is low in energy consumption to use, make
It is able to extensive use.Especially, with the fast development of LED industry, LED lighting field application proportion increasingly
It is high.
Existing LED epitaxial structure includes successively from bottom to top：Substrate, AlN epitaxial buffer layers, high-temperature AlN layer, Al components
Gradually drop p-type AlGaN layer, AlGaN/AlInGaN MQW superlattices luminescent layer, N-type AlGaN/GaN current extendings, N-type connect
Contact layer.Because existing LED is epitaxially grown in Sapphire Substrate, because defect concentration is high and impurity swashs energy height and causes doping tired
Difficulty, particularly p-shaped, which are mixed, to be more difficult, and causes Carrier Injection Efficiency low so that light efficiency is relatively low, simultaneously as quantum confinement history
Plutarch effect, causes SQW to meet efficiency decline, and two kinds of factors, which are superimposed, causes the quantum efficiency of ultraviolet LED further to reduce.
The content of the invention
It is an object of the invention to provide a kind of reversed polarity ultraviolet LED epitaxial structure and preparation method thereof.
To achieve these goals, an embodiment of the present invention provides a kind of reversed polarity ultraviolet LED epitaxial structure, described anti-
Polarity ultraviolet LED epitaxial structure includes：Substrate, AlN epitaxial buffer layers, AlGaN layer, p-type AlvGa(1-v)N：Mg contact layers, p-type
AlN layers, p-type AlxGa (1-x) N barrier layer of Al content gradually variationals, AlInGaN/AlGaN MQW superlattices luminescent layers, N-type
N layers of AlyGa (1-y), N-type AlwGa (1-w) N contact layers.
In order to realize that foregoing invention purpose is another, present embodiment provides a kind of system of reversed polarity ultraviolet LED epitaxial structure
Preparation Method, methods described includes：
S1, one substrate of offer；
S2, the substrate is positioned over sputtering machine table, is that at 450 ~ 700 DEG C, growing AIN is thin over the substrate in temperature environment
Film is to form AlN epitaxial buffer layers；
S3, the substrate for being formed with AlN epitaxial buffer layers is positioned in MOCVD；
S4, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, it is raw on the AlN epitaxial buffer layers
Long high temperature AlGaN layer；
S5, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, high temperature is grown in the AlGaN layer
P-type AlvGa(1-v)N：Mg contact layers；
S6, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, in the high temperature p-type AlvGa(1-v)N：
AlN layers of high temperature p-type is grown on Mg contact layers；
S7, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, it is raw on the high temperature p-type AlN layers
P-type AlxGa (1-x) N barrier layer of long Al content gradually variationals；
S8, in temperature environment it is 950 ~ 1100 DEG C, under growth pressure is 50 ~ 300Torr, in the p-type of the Al content gradually variationals
AlInGaN quantum well layers and AlGaN quantum barrier layers are grown successively in AlxGa (1-x) N barrier layer；
S9, repeat step S8 perform 5 ~ 25 cycles, form low temperature AI InGaN/AlGaN MQW superlattices luminescent layers；
S10, in temperature environment it is 950 ~ 1200 DEG C, under growth pressure is 100 ~ 400Torr, in the low temperature AI InGaN/
N layers of high temperature N-type AlyGa (1-y) is grown on AlGaN MQW superlattices luminescent layers；
S11, in temperature environment it is 950 ~ 1200 DEG C, under growth pressure is 100 ~ 400Torr, in the high temperature N-type AlyGa (1-
Y) high temperature N-type AlwGa (1-w) N contact layers are grown on N layers.
As the further improvement of an embodiment of the present invention, the thickness for preparing of the AlN cushions is 10 ~ 100nm.
As the further improvement of an embodiment of the present invention, the thickness for preparing of the high temperature AlGaN layer is 0.5 ~ 2um.
It is used as the further improvement of an embodiment of the present invention, the high temperature p-type AlvGa(1-v)N：The preparation of Mg contact layers
Thickness is 0.02 ~ 0.1um, and Al components v is not less than 0.5, and doping concentration is 1*1019/cm3 ~ 1*1020/cm3.
As the further improvement of an embodiment of the present invention, AlN layers of the high temperature p-type prepare thickness for 0.02 ~
0.1um, doping concentration is 1*1019/cm3 ~ 1*1020/cm3.
As the further improvement of an embodiment of the present invention, p-type AlxGa (1-x) N barrier layer of the Al content gradually variationals
Thickness is prepared for 0.3 ~ 1umum, wherein, Al components are that Al component x initial values are 1 along direction of growth gradual change from high to low ~
0.95, gradual change to end value 0.1 ~ 0.45, doping concentration is 0/cm3 ~ 1*1020/cm3.
As the further improvement of an embodiment of the present invention, each layer of AlInGaN quantum well layer and AlGaN quantum barrier layers
The thickness for preparing be 0.1 ~ 5nm.
As the further improvement of an embodiment of the present invention, the thickness for preparing of N layers of the high temperature N-type AlyGa (1-y) is
20 ~ 200nm, Al component y are not less than the Al components at multiple quantum base, and doping concentration is 1*1018/cm3 ~ 2*1019/cm3.
As the further improvement of an embodiment of the present invention, the preparation of high temperature N-type AlwGa (1-w) the N contact layers is thick
Spend for 20 ~ 80nm, Al component w values are not higher than Al component y values in N layers of high temperature N-type AlyGa (1-y), and doping concentration is 1*1018/
cm3~1*1020/cm3。
Compared with prior art, the beneficial effects of the invention are as follows：The reversed polarity ultraviolet LED epitaxial structure and its system of the present invention
Preparation Method, solves the problem of ultraviolet AlInGaN bases LED quantum efficiencies are low in the prior art, by changing traditional LED along
Epitaxial structure and succession of the substrate from N-type SQW to p-type, make it be changed to p-type AlGaN mqw light emitting layers to N-type
AlGaN growth pattern, and then additional power plant during operation in the opposite direction, is improved carrier with the polarization power plant in SQW
Meet efficiency, while N layers of p-type p-type AlxGa (1-x) Al components X fades to the number more than 0 along epitaxial growth direction from 1
Value, produces p-shaped using polarized electric field effect and mixes, further solve the problem of p-shaped mixes difficulty.
Brief description of the drawings
Fig. 1 is the structural representation of reversed polarity ultraviolet LED epitaxial structure in an embodiment of the present invention；
Fig. 2 is the schematic flow sheet of the preparation method of reversed polarity ultraviolet LED epitaxial structure in an embodiment of the present invention.
Embodiment
Below with reference to embodiment shown in the drawings, the present invention will be described in detail.But these embodiments are simultaneously
The present invention is not limited, structure that one of ordinary skill in the art is made according to these embodiments, method or functionally
Conversion is all contained in protection scope of the present invention.
As shown in figure 1, an embodiment of the present invention provides a kind of reversed polarity ultraviolet LED epitaxial structure, the reversed polarity is purple
Outer LED epitaxial structure includes successively from bottom to top：
Substrate 10, AlN epitaxial buffer layers 20, AlGaN layer 30, p-type AlvGa(1-v)N：Mg contact layers 40, p-type AlN layers 50, Al groups
Divide the p-type Al of gradual changexGa(1-x)N barrier layer 60, AlInGaN/AlGaN MQW superlattices luminescent layer 70, N-type AlyGa(1-y)N layers
80, N-type AlwGa(1-w)N contact layers 90.
With reference to shown in Fig. 2, there is provided a kind of reversed polarity ultraviolet LED epitaxial structure as described above in an embodiment of the present invention
Preparation method, methods described includes：
S1, one substrate of offer；
In an embodiment of the present invention, the material of substrate is Sapphire Substrate, certainly, in the other embodiment of the present invention,
Substrate can also be other backing materials, such as Si, SiC.
S2, the substrate is positioned over sputtering machine table, is at 450 ~ 700 DEG C, to grow over the substrate in temperature environment
AlN films are to form AlN epitaxial buffer layers；
In an embodiment of the present invention, the thickness of AlN epitaxial buffer layers is 10 ~ 100nm.
S3, the substrate for being formed with AlN epitaxial buffer layers is positioned in MOCVD；
S4, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, it is raw on the AlN epitaxial buffer layers
Long high temperature AlGaN layer；
In an embodiment of the present invention, the thickness of AlGaN layer is 0.5 ~ 2um.
S5, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, is grown in the AlGaN layer
High temperature p-type AlvGa(1-v)N：Mg contact layers；
In an embodiment of the present invention, p-type AlvGa(1-v)N：The thickness of Mg contact layers is 0.02 ~ 0.1um, and Al components v is not less than
0.5, doping concentration is 1*1019/cm3~1*1020/cm3。
If it should be noted that the layer is p-type, the medium that the doping concentration is referred to is Mg, if the layer is N-type,
The medium that the doping concentration is referred to is Si.
S6, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, in the high temperature p-type
AlvGa(1-v)N：AlN layers of high temperature p-type is grown on Mg contact layers；
In an embodiment of the present invention, the thickness that AlN layers of p-type is 0.02 ~ 0.1um, and doping concentration is 1*1019/cm3~1*1020/
cm3。
S7, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, in AlN layers of the high temperature p-type
The p-type Al of upper growth Al content gradually variationalsxGa(1-x)N barrier layer；
The p-type Al of Al content gradually variationalsxGa(1-x)The thickness of N barrier layer be 0.3 ~ 1umum, wherein, Al components be along the direction of growth by
High to Low gradual change, Al components x initial value is 1 ~ 0.95, and gradual change is to end value 0.1 ~ 0.45, and doping concentration is 0/cm3~1*
1020/cm3。
S8, in temperature environment it is 950 ~ 1100 DEG C, under growth pressure is 50 ~ 300Torr, in the P of the Al content gradually variationals
Type AlxGa(1-x)AlInGaN quantum well layers and AlGaN quantum barrier layers are grown in N barrier layer successively；
In AlInGaN/AlGaN MQW superlattices luminescent layer 70, each layer of AlInGaN quantum well layer and AlGaN quantum are built
The thickness of layer is 0.1 ~ 5nm.
S9, repeat step S8 perform 5 ~ 25 cycles, form low temperature AI InGaN/AlGaN MQWs superlattices and light
Layer；
In AlInGaN/AlGaN MQW superlattices luminescent layers, each layer of AlInGaN quantum well layer and AlGaN quantum barrier layers
Thickness be 0.1 ~ 5nm.
S10, in temperature environment it is 950 ~ 1200 DEG C, under growth pressure is 100 ~ 400Torr, in the low temperature AI InGaN/
High temperature N-type Al is grown on AlGaN MQW superlattices luminescent layersyGa(1-y)N layers；
The N-type AlyGa(1-y)N layers of Al components y is not less than the Al components in multiple AlGaN quantum barrier layers, and doping concentration is 1*
1018/cm3~2*1019/cm3。
S11, in temperature environment it is 950 ~ 1200 DEG C, under growth pressure is 100 ~ 400Torr, in the high temperature N-type
AlyGa(1-y)High temperature N-type Al is grown on N layerswGa(1-w)N contact layers.
N-type AlwGa(1-w)The thickness of N contact layers is 20 ~ 80nm, and Al component w values are not higher than high temperature N-type AlyGa(1-y)In N layers
Al component y values, doping concentration is 1*1018/cm3~1*1020/cm3。
Below in conjunction with embodiment, the invention will be further described.
Embodiment one：
In the present embodiment, the preparation method of reversed polarity ultraviolet LED epitaxial structure is specifically included：
M1, offer Sapphire Substrate；
M2, the substrate is positioned over sputtering machine table, is at 600 DEG C in temperature environment, over the substrate growing AIN film with
Form the AlN epitaxial buffer layers that thickness is 20nm；
M3, the substrate for being formed with AlN epitaxial buffer layers is positioned in MOCVD, carries out follow-up epitaxial growth；
M4, in temperature environment it is 1150 ~ 1180 DEG C, under growth pressure is 150 ~ 200Torr, on the AlN epitaxial buffer layers
Growth thickness is 0.8 ~ 1um high temperature AlGaN layer；
M5, in temperature environment it is 1130 ~ 1150 DEG C, under growth pressure is 100TTorr, growth thickness is in the AlGaN layer
0.05um high temperature p-type AlvGa(1-v)N：Mg contact layers, wherein, Al component v values are 0.5, and its doping concentration is 1*1020/cm3；
M6, in temperature environment it is 1130 ~ 1150 DEG C, under growth pressure is 50Torr, in the high temperature p-type AlvGa(1-v)N：Mg connects
Growth thickness is 0.02um AlN layers of high temperature p-type in contact layer, and its doping concentration is 1*1020/cm3；
M7, in temperature environment it is 1130 ~ 1150 DEG C, under growth pressure is 50Torr, is grown on the high temperature p-type AlN layers thick
Spend the p-type Al of the Al content gradually variationals for 0.6umxGa(1-x)N barrier layer；Wherein, Al components be along the direction of growth from high to low gradually
Become, Al components x initial value is 1, and gradual change is to end value 0.45, and doping concentration is 3*1019/cm3。
M8, in temperature environment it is 1100 DEG C, under growth pressure is 100Torr, in the p-type of the Al content gradually variationals
AlxGa(1-x)The AlGaN quantum that the AlInGaN quantum well layers and thickness that growth thickness is 0.3nm successively in N barrier layer are 3nm are built
Layer；
M9, repeat step S8 perform 20 cycles, form low temperature AI InGaN/AlGaN MQW superlattices luminescent layers；
M10, in temperature environment it is 1100 DEG C, under growth pressure is 100Torr, in the low temperature AI InGaN/AlGaN Multiple-quantums
Growth thickness is 200nm high temperature N-type Al on trap superlattices luminescent layeryGa(1-y)N layers；Wherein, Al components y values are 0.65, doping
Concentration is 1*1019/cm3。
M11, in temperature environment it is 1100 DEG C, under growth pressure is 100Torr, in the high temperature N-type AlyGa(1-y)On N layers
Growth thickness is 20 ~ 80nm high temperature N-type AlwGa(1-w)N contact layers, wherein, Al component w values are 0.35, and doping concentration is 3*
1019/cm3。
Embodiment two：
In the present embodiment, the preparation method of reversed polarity ultraviolet LED epitaxial structure is specifically included：
N1, offer silicon substrate；
N2, the substrate is positioned over sputtering machine table, is at 600 DEG C in temperature environment, over the substrate growing AIN film with
Form the AlN epitaxial buffer layers that thickness is 30nm；
N3, the substrate for being formed with AlN epitaxial buffer layers is positioned in MOCVD, carries out follow-up epitaxial growth；
N4, in temperature environment it is 1150 ~ 1180 DEG C, under growth pressure is 150 ~ 200Torr, on the AlN epitaxial buffer layers
Growth thickness is 0.8 ~ 1um high temperature AlGaN layer.
N5, in temperature environment it is 1130 ~ 1150 DEG C, under growth pressure is 100TTorr, is grown in the AlGaN layer thick
Spend the high temperature p-type Al for 0.05umvGa(1-v)N：Mg contact layer contact layers, wherein, Al component v values are 0.5, and its doping concentration is
1*1020/cm3；
N6, in temperature environment it is 1130 ~ 1150 DEG C, under growth pressure is 50Torr, in the high temperature p-type AlvGa(1-v)N：Mg connects
Growth thickness is 0.02um AlN layers of high temperature p-type in contact layer, and its doping concentration is 1*1020/cm3；
N7, in temperature environment it is 1130 ~ 1150 DEG C, under growth pressure is 50Torr, is grown on the high temperature p-type AlN layers thick
Spend the p-type Al of the Al content gradually variationals for 0.6umxGa(1-x)N barrier layer；Wherein, Al components be along the direction of growth from high to low gradually
Become, Al components x initial value is 1, and gradual change is to end value 0.45, and doping concentration is 3*1019/cm3。
N8, in temperature environment it is 1100 DEG C, under growth pressure is 100Torr, in the p-type of the Al content gradually variationals
AlxGa(1-x)The AlGaN quantum that the AlInGaN quantum well layers and thickness that growth thickness is 0.3nm successively in N barrier layer are 3nm are built
Layer；
N9, repeat step S8 perform 20 cycles, form low temperature AI InGaN/AlGaN MQW superlattices luminescent layers；
N10, in temperature environment it is 1100 DEG C, under growth pressure is 100Torr, in the low temperature AI InGaN/AlGaN Multiple-quantums
Growth thickness is 200nm high temperature N-type Al on trap superlattices luminescent layeryGa(1-y)N layers；Wherein, Al components y values are 0.65, doping
Concentration is 1*1019/cm3。
N11, in temperature environment it is 1100 DEG C, under growth pressure is 100Torr, in the high temperature N-type AlyGa(1-y)On N layers
Growth thickness is 20 ~ 80nm high temperature N-type AlwGa(1-w)N contact layers, wherein, Al component w values are 0.35, and doping concentration is 3*
1019/cm3。
In summary, reversed polarity ultraviolet LED epitaxial structure of the invention and preparation method thereof, is solved purple in the prior art
The problem of outer AlInGaN bases LED quantum efficiencies are low, by changing, traditional LED is outer from N-type SQW to p-type along substrate
Prolong structure and succession, it is changed to p-type AlGaN mqw light emitting layers to N-type AlGaN growth pattern, and then make behaviour
With the polarization power plant in SQW in the opposite direction, that improves carrier meets efficiency, while p-type p-type for additional power plant when making
AlxGa(1-x)N layers of Al components X fades to numerical value more than 0 along epitaxial growth direction from 1, utilizes polarized electric field effect to produce P
Parameter is miscellaneous, further solves the problem of p-shaped mixes difficulty.
It should be understood that, although the present specification is described in terms of embodiments, but not each embodiment only includes one
Individual independent technical scheme, this narrating mode of specification is only that for clarity, those skilled in the art will should say
Bright book is as an entirety, and the technical scheme in each embodiment may also be suitably combined to form those skilled in the art can
With the other embodiment of understanding.
Those listed above is a series of to be described in detail only for feasibility embodiment of the invention specifically
Bright, they simultaneously are not used to limit the scope of the invention, all equivalent implementations made without departing from skill spirit of the present invention
Or change should be included in the scope of the protection.
Claims (10)
1. a kind of reversed polarity ultraviolet LED epitaxial structure, it is characterised in that the reversed polarity ultraviolet LED epitaxial structure is from bottom to top
Include successively：
Substrate, AlN epitaxial buffer layers, AlGaN layer, p-type AlvGa(1-v)N：Mg contact layers, AlN layers of p-type, the p-type of Al content gradually variationals
AlxGa(1-x)N barrier layer, AlInGaN/AlGaN MQW superlattices luminescent layers, N-type AlyGa(1-y)N layers, N-type AlwGa(1-w)N connects
Contact layer.
2. a kind of preparation method of reversed polarity ultraviolet LED epitaxial structure, it is characterised in that methods described includes：
S1, one substrate of offer；
S2, the substrate is positioned over sputtering machine table, is that at 450 ~ 700 DEG C, growing AIN is thin over the substrate in temperature environment
Film is to form AlN epitaxial buffer layers；
S3, the substrate for being formed with AlN epitaxial buffer layers is positioned in MOCVD；
S4, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, it is raw on the AlN epitaxial buffer layers
Long high temperature AlGaN layer；
S5, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, high temperature is grown in the AlGaN layer
P-type AlvGa(1-v)N：Mg contact layers；
S6, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, in the high temperature p-type AlvGa(1-v)N：
AlN layers of high temperature p-type is grown on Mg contact layers；
S7, in temperature environment it is 1000 ~ 1200 DEG C, under growth pressure is 50 ~ 200Torr, it is raw on the high temperature p-type AlN layers
The p-type Al of long Al content gradually variationalsxGa(1-x)N barrier layer；
S8, in temperature environment it is 950 ~ 1100 DEG C, under growth pressure is 50 ~ 300Torr, in the p-type of the Al content gradually variationals
AlxGa(1-x)AlInGaN quantum well layers and AlGaN quantum barrier layers are grown in N barrier layer successively；
S9, repeat step S8 perform 5 ~ 25 cycles, form low temperature AI InGaN/AlGaN MQW superlattices luminescent layers；
S10, in temperature environment it is 950 ~ 1200 DEG C, under growth pressure is 100 ~ 400Torr, in the low temperature AI InGaN/
High temperature N-type Al is grown on AlGaN MQW superlattices luminescent layersyGa(1-y)N layers；
S11, in temperature environment it is 950 ~ 1200 DEG C, under growth pressure is 100 ~ 400Torr, in the high temperature N-type AlyGa(1-y)N
High temperature N-type Al is grown on layerwGa(1-w)N contact layers.
3. the preparation method of reversed polarity ultraviolet LED epitaxial structure according to claim 2, it is characterised in that the AlN delays
That rushes layer prepares thickness for 10 ~ 100nm.
4. the preparation method of reversed polarity ultraviolet LED epitaxial structure according to claim 2, it is characterised in that the high temperature
The thickness for preparing of AlGaN layer is 0.5 ~ 2um.
5. the preparation method of reversed polarity ultraviolet LED epitaxial structure according to claim 2, it is characterised in that the high temperature P
Type AlvGa(1-v)N：The thickness for preparing of Mg contact layers is 0.02 ~ 0.1um, and Al components v is not less than 0.5, and doping concentration is 1*1019/
cm3~1*1020/cm3。
6. the preparation method of reversed polarity ultraviolet LED epitaxial structure according to claim 2, it is characterised in that the high temperature P
The thickness for preparing of AlN layers of type is 0.02 ~ 0.1um, and doping concentration is 1*1019/cm3~1*1020/cm3。
7. the preparation method of reversed polarity ultraviolet LED epitaxial structure according to claim 2, it is characterised in that the Al groups
Divide the p-type Al of gradual changexGa(1-x)N barrier layer prepares thickness for 0.3 ~ 1umum, wherein, Al components be along the direction of growth by height to
Low gradual change, Al component x initial values are 1 ~ 0.95, and gradual change is to end value 0.1 ~ 0.45, and doping concentration is 0/cm3~1*1020/cm3。
8. the preparation method of reversed polarity ultraviolet LED epitaxial structure according to claim 2, it is characterised in that each layer
The thickness for preparing of AlInGaN quantum well layers and AlGaN quantum barrier layers is 0.1 ~ 5nm.
9. the preparation method of reversed polarity ultraviolet LED epitaxial structure according to claim 2, it is characterised in that the high temperature N
Type AlyGa(1-y)N layers of the thickness for preparing is 20 ~ 200nm, and Al components y is not less than the Al components in multiple AlGaN quantum barrier layers, mixed
Miscellaneous concentration is 1*1018/cm3~2*1019/cm3。
10. the preparation method of reversed polarity ultraviolet LED epitaxial structure according to claim 2, it is characterised in that the high temperature
N-type AlwGa(1-w)The thickness for preparing of N contact layers is 20 ~ 80nm, and Al component w values are not higher than high temperature N-type AlyGa(1-y)Al groups in N layers
Divide y values, doping concentration is 1*1018/cm3~1*1020/cm3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710241337.5A CN106992233A (en) | 2017-04-13 | 2017-04-13 | Reversed polarity ultraviolet LED epitaxial structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710241337.5A CN106992233A (en) | 2017-04-13 | 2017-04-13 | Reversed polarity ultraviolet LED epitaxial structure and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106992233A true CN106992233A (en) | 2017-07-28 |
Family
ID=59415978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710241337.5A Pending CN106992233A (en) | 2017-04-13 | 2017-04-13 | Reversed polarity ultraviolet LED epitaxial structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106992233A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231960A (en) * | 2018-01-05 | 2018-06-29 | 广东省半导体产业技术研究院 | A kind of ultraviolet device of AlGaN base semiconductors for improving light efficiency and preparation method thereof |
| CN109300980A (en) * | 2018-09-25 | 2019-02-01 | 中国科学院长春光学精密机械与物理研究所 | A kind of high mobility high hole concentration p-type AlGaN material and its growing method |
| CN109661730A (en) * | 2016-09-02 | 2019-04-19 | 欧司朗光电半导体有限公司 | Opto-electronic device |
| CN111341892A (en) * | 2020-03-17 | 2020-06-26 | 厦门乾照半导体科技有限公司 | LED epitaxial structure, manufacturing method thereof and LED chip |
| CN111477729A (en) * | 2020-05-30 | 2020-07-31 | 海南师范大学 | Light emitting diode with five-step quantum well and V-shaped electronic barrier layer structure |
| CN111477730A (en) * | 2020-05-30 | 2020-07-31 | 海南师范大学 | Light emitting diode with five-step quantum well and inverted V-shaped electron barrier layer |
| CN111477731A (en) * | 2020-05-30 | 2020-07-31 | 海南师范大学 | Light emitting diode with five-step quantum well and triangular electron barrier layer |
| CN114122218A (en) * | 2022-01-24 | 2022-03-01 | 南昌硅基半导体科技有限公司 | GaN-based LED chip with omnibearing reflective electrode and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101540360A (en) * | 2009-04-29 | 2009-09-23 | 山东华光光电子有限公司 | 6H-SiC substrate reversed polarity AlGaInP LED chip |
| CN102142491A (en) * | 2010-02-01 | 2011-08-03 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, and lighting system |
| CN102800772A (en) * | 2011-05-23 | 2012-11-28 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, and light unit |
| CN104900775A (en) * | 2014-03-06 | 2015-09-09 | 比亚迪股份有限公司 | LED structure and formation method thereof |
| CN104934507A (en) * | 2015-06-25 | 2015-09-23 | 聚灿光电科技股份有限公司 | Light-emitting diode (LED) epitaxial structure and fabrication method thereof |
-
2017
- 2017-04-13 CN CN201710241337.5A patent/CN106992233A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101540360A (en) * | 2009-04-29 | 2009-09-23 | 山东华光光电子有限公司 | 6H-SiC substrate reversed polarity AlGaInP LED chip |
| CN102142491A (en) * | 2010-02-01 | 2011-08-03 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, and lighting system |
| CN102800772A (en) * | 2011-05-23 | 2012-11-28 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, and light unit |
| CN104900775A (en) * | 2014-03-06 | 2015-09-09 | 比亚迪股份有限公司 | LED structure and formation method thereof |
| CN104934507A (en) * | 2015-06-25 | 2015-09-23 | 聚灿光电科技股份有限公司 | Light-emitting diode (LED) epitaxial structure and fabrication method thereof |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109661730B (en) * | 2016-09-02 | 2021-09-07 | 欧司朗光电半导体有限公司 | Optoelectronic component |
| CN109661730A (en) * | 2016-09-02 | 2019-04-19 | 欧司朗光电半导体有限公司 | Opto-electronic device |
| US11114584B2 (en) | 2016-09-02 | 2021-09-07 | Osram Oled Gmbh | Optoelectronic component |
| CN108231960B (en) * | 2018-01-05 | 2023-10-27 | 广东省半导体产业技术研究院 | AlGaN-based semiconductor ultraviolet device capable of improving light efficiency and preparation method thereof |
| CN108231960A (en) * | 2018-01-05 | 2018-06-29 | 广东省半导体产业技术研究院 | A kind of ultraviolet device of AlGaN base semiconductors for improving light efficiency and preparation method thereof |
| CN109300980A (en) * | 2018-09-25 | 2019-02-01 | 中国科学院长春光学精密机械与物理研究所 | A kind of high mobility high hole concentration p-type AlGaN material and its growing method |
| CN111341892B (en) * | 2020-03-17 | 2021-11-02 | 厦门乾照半导体科技有限公司 | LED epitaxial structure, manufacturing method thereof and LED chip |
| CN111341892A (en) * | 2020-03-17 | 2020-06-26 | 厦门乾照半导体科技有限公司 | LED epitaxial structure, manufacturing method thereof and LED chip |
| CN111477731A (en) * | 2020-05-30 | 2020-07-31 | 海南师范大学 | Light emitting diode with five-step quantum well and triangular electron barrier layer |
| CN111477730A (en) * | 2020-05-30 | 2020-07-31 | 海南师范大学 | Light emitting diode with five-step quantum well and inverted V-shaped electron barrier layer |
| CN111477729A (en) * | 2020-05-30 | 2020-07-31 | 海南师范大学 | Light emitting diode with five-step quantum well and V-shaped electronic barrier layer structure |
| CN111477730B (en) * | 2020-05-30 | 2023-04-07 | 海南师范大学 | Light emitting diode with five-step quantum well and inverted V-shaped electron barrier layer |
| CN111477731B (en) * | 2020-05-30 | 2023-04-07 | 海南师范大学 | Light emitting diode with five-step quantum well and triangular electron barrier layer |
| CN114122218A (en) * | 2022-01-24 | 2022-03-01 | 南昌硅基半导体科技有限公司 | GaN-based LED chip with omnibearing reflective electrode and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106992233A (en) | Reversed polarity ultraviolet LED epitaxial structure and preparation method thereof | |
| CN102185056B (en) | Gallium-nitride-based light emitting diode capable of improving electron injection efficiency | |
| CN105226149B (en) | A kind of LED epitaxial structure and production method | |
| CN101834248B (en) | Gallium nitride light emitting diode | |
| CN105789394A (en) | GaN-based LED epitaxial structure and manufacture method thereof | |
| CN103236480B (en) | A kind of epitaxial wafer of light-emitting diode and manufacture method thereof | |
| JP2010010678A (en) | Quantum dot device and method of manufacturing the same | |
| CN104282808B (en) | A kind of ultraviolet LED extension active area structure growing method | |
| CN102157646A (en) | Nitride LED structure and preparation method thereof | |
| CN105514234A (en) | Nitride light emitting diode and growth method thereof | |
| US20210305455A1 (en) | Epitaxial structure, preparation method thereof, and led | |
| CN103824917A (en) | LED manufacturing method, LED and chip | |
| CN205092260U (en) | Gan base led epitaxial structure | |
| CN105304778B (en) | Improve epitaxial structure of GaN base LED antistatic properties and preparation method thereof | |
| JP6298462B2 (en) | An activity having nanodots (also referred to as “quantum dots”) on a mother crystal composed of zinc blende type (also referred to as cubic) AlyInxGa1-y-xN crystal (y ≧ 0, x> 0) grown on a Si substrate. Region and light emitting device using the same (LED and LD) | |
| JPH11354840A (en) | Fabrication of gan quantum dot structure and use thereof | |
| CN103996766B (en) | Gallium nitride based light emitting diode and preparation method thereof | |
| CN109671815B (en) | Epitaxial wafer of light emitting diode, manufacturing method of epitaxial wafer and light emitting diode | |
| CN204668346U (en) | LED epitaxial structure | |
| CN110797441B (en) | LED epitaxial film with InGaN/GaN/AlGaN/GaN quantum wells and preparation method and application thereof | |
| CN105789391B (en) | GaN base LED epitaxial structure and its manufacturing method | |
| KR101644156B1 (en) | Light emitting device having active region of quantum well structure | |
| CN109545919B (en) | High-efficiency ultraviolet light-emitting diode modulated and doped by n-type AlGaN layer and preparation method thereof | |
| CN205900578U (en) | Light emitting diode epitaxial wafer | |
| CN203367343U (en) | Light-emitting layer of light emitting diode epitaxial wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: Room 01-05, 32nd Floor, Zhongxin Building, 15 Moon Bay Road, Suzhou Industrial Park, Jiangsu Province Applicant after: FOCUS LIGHTINGS TECHNOLOGY CO., LTD. Address before: 215123 Xin Qing Road, Suzhou Industrial Park, Jiangsu Province, No. 8 Applicant before: FOCUS LIGHTINGS TECHNOLOGY CO., LTD. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170728 |
|
| RJ01 | Rejection of invention patent application after publication |