CN104282808B - A kind of ultraviolet LED extension active area structure growing method - Google Patents
A kind of ultraviolet LED extension active area structure growing method Download PDFInfo
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- CN104282808B CN104282808B CN201410524927.5A CN201410524927A CN104282808B CN 104282808 B CN104282808 B CN 104282808B CN 201410524927 A CN201410524927 A CN 201410524927A CN 104282808 B CN104282808 B CN 104282808B
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000012010 growth Effects 0.000 claims abstract description 57
- 230000004888 barrier function Effects 0.000 claims abstract description 54
- 230000008569 process Effects 0.000 claims abstract description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract description 2
- 238000005036 potential barrier Methods 0.000 abstract description 2
- 238000005395 radioluminescence Methods 0.000 abstract description 2
- 239000011777 magnesium Substances 0.000 description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000012459 cleaning agent Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention proposes a kind of epitaxial structures growth method of new growth ultraviolet LED active area, and MQW barrier layer is grown in a particular manner, and the radioluminescence of ultraviolet light can be finally better achieved, and lifts the light efficiency of ultraviolet LED.The method is in growth several cycles AlxGa1‑xN/AlyGa1‑yDuring N SQW barrier layer, barrier layer AlyGa1‑yThe aluminium component incremental variations of N are (individually for each barrier layer itself, Al content keeps constant in its growth course), so that just starting electronics crosses barrier energy reduction, electric current uniform expansion after enhanced potential barrier later, reduce voltage, the restriction effect of electronics is lifted simultaneously, while hole can extend to central active area well in injection process, so as to lift the overall luminous efficiency of ultraviolet LED.
Description
Technical field
The invention belongs to semiconductor photoelectronic device preparing technical field, and in particular to a kind of purple LED extension active area
Structure growth approach.
Background technology
As the development that LED is applied, the market demand of purple LED are increasing, emission wavelength covers the purple of 210-400nm
Outer LED, with the incomparable advantage of traditional UV sources.Illuminating, biologic medical, authentication, air, purification of water quality,
All alternative ultraviolet mercury lamp of the tradition containing poisonous and harmful substance of the aspects such as biochemistry detection, high density information storage, current purple LED
Growth is due to the difficulty influence that limited in itself by growth material and adulterated, and luminous efficiency is generally relatively low.How luminous effect is lifted
Rate, is the emphasis of current ultraviolet LED extension.It was found that the Al constituent contents of each barrier layer of traditional material active area MQW
Generally all identical, the present invention is to generate the thinking of the light efficiency for lifting ultraviolet LED and be optimized from this respect to analyze and real
Test.
The content of the invention
The present invention proposes a kind of epitaxial structures growth method of new growth ultraviolet LED active area, gives birth in a particular manner
MQW barrier layer long, can finally be better achieved the radioluminescence of ultraviolet light, lift the light efficiency of ultraviolet LED.
Basic scheme of the invention is as follows：
Ultraviolet LED extension active area structure growing method, wherein growing several cycles AlxGa1-xN/AlyGa1-yN quantum
The link of trap barrier layer is used as active area, y>X, wherein AlxGa1-xN is used as well layer, AlyGa1-yN is used as barrier layer；Its special character exists
In：Barrier layer AlyGa1-yThe Al components of N are incremented by change in active region growth process, i.e., y values start from a b finally, 1>b>a>x>0
(individually for each barrier layer itself, Al content keeps constant in its growth course).
Depending on the specific wavelength to be grown, in theory according to the solution of the present invention, x is in 0~1 scope for numerical value selected by x
Interior value can obtain the ultraviolet LED of more specular removal.
Based on above-mentioned basic scheme, the present invention also further does following optimization and limits：
The span of a is the 1/3~1/2 of b.I.e.：The incremental width scope of y values as low as since the 1/2 of b until b, greatly
To since the 1/3 of b, until b, within such span scope, final effect is more preferably.
Above-mentioned incremental variations are specially consecutive variations, graded or mixing graded.Wherein with consecutive variations most
Most preferably.
Accordingly, the present invention is it is also proposed that a kind of ultraviolet LED epitaxial growth method, comprises the following steps：
One layer of low temperature AI N of Grown on Sapphire Substrates；
One layer of high-temperature AlN of growth；
Grow several cycles AlN/AlGaN super lattice structure layers；
One layer of N-shaped AlGaN layer of doping silane of growth；
According to above-mentioned ultraviolet LED extension active area structure growing method, several cycles Al is grownxGa1-xN/AlyGa1-yN
SQW barrier layer；
One layer of magnesium-doped p-type AlGaN barrier layer of growth；
One layer of magnesium-doped p-type GaN contact layer of growth；
Annealed under nitrogen atmosphere.
Beneficial effects of the present invention are as follows：
Present invention barrier layer Al during active region growthyGa1-yThe aluminium component incremental variations of N, barrier layer AlyGa1-yN(y>x>
0) Al change of component adopts to grow in this way can both prevent the excessively excessive of electronics, can also strengthen electronics SQW point
Cloth so that just start electronics and cross barrier energy reduction, electric current uniform expansion after enhanced potential barrier later, reduces voltage, together
The restriction effect of Shi Tisheng electronics, while hole can extend to central active area well in injection process, so as to lift purple
Outer LED overall luminous efficiency.
Brief description of the drawings
Fig. 1 is the extension overall structure diagram of ultraviolet LED of the invention.
Specific embodiment
The present invention, as growth substrate, carries out heteroepitaxial growth, with MOCVD (metallorganics using sapphire
Learn vapour deposition) technology completes whole epitaxial process.One layer of low temperature AI N is grown on a sapphire substrate, then high temperature life again
One layer of AlN is grown, then the several cycle AlN/AlGaN super lattice structure layers of regrowth, then one layer of N-shaped of doping silane of regrowth
AlGaN layer, then grows one layer of several cycle AlxGa1-xN/AlyGa1-yN(y>X) SQW builds area, wherein AlxGa1-xN conducts
Well layer, AlyGa1-yN is used as barrier layer.Then one layer of Al component magnesium-doped p-type AlGaN barrier layers higher are grown, one is then grown
The very thin magnesium-doped p-type GaN contact layers of layer.
Wherein, the Al of cycle growthxGa1-xN/AlyGa1-yN(y>X) in the area of SQW base, barrier layer AlyGa1-yN(y>x>0)
Al components be in growth course change, i.e., y values start from a b finally, b>a>x>0.Change procedure from a to b can be divided into
Consecutive variations, graded, the mixing class of graded three.
Consecutive variations refer to a consecutive variations of each barrier layer Al constituent content y values from beginning during active region growth
To the b for terminating.I.e. individually for each barrier layer itself, Al content keeps constant, shape between different barrier layer in its growth course
Into gradual change, such as barrier layer 1, barrier layer 2, barrier layer 3, its y value is respectively a1, a2, a3, wherein a1<a2<a3.
Graded refers to that during active region growth, each barrier layer Al constituent content y values are passed from a stageds for starting
Increase to the b of end.For example：Preceding several barrier layer keep constant with y=a, and rear several barrier layer keep constant with y=b；Can also be thin again
It is divided into three-level, level Four ladder etc..
Mixing graded refers to during active region growth, y values consecutive variations both in the presence of certain several barrier layer or to deposit
In the y value gradeds of certain several barrier layer.For example：Preceding several barrier layer keep constant with y=a, and rear several barrier layer y values continuously become big
To b；Three phases can also be divided into, the several barrier layer of first stage keep constant, the several barrier layer y values of second stage with y=a
Continuous to become big to certain value in the middle of a, b, the several barrier layer of three phases keep constant with y=b.In this way, mixing graded
There can be various concrete forms.
The present invention can use metallo-organic compound chemical gaseous phase deposition (MOCVD) growth technology, using trimethyl
Gallium (TMGa), triethyl-gallium (TEGa), and trimethyl indium (TMIn), trimethyl aluminium (TMAl) and ammonia (NH3) silane (SiH4)
Gallium source required for providing growth respectively with two luxuriant magnesium (cp2mg), indium source, silicon source, and nitrogen source, silicon source, magnesium source.
Embodiment one
1. by Sapphire Substrate Special cleaning agent after, be put into MOCVD device 1100 DEG C toast 10 minutes.
2. 600 DEG C of cooling degree grows low temperature AI N layers of a layer thickness 10nm, and growth pressure is 100torr.
3. 1070 DEG C of high-temperature AlN layers of growth a layer thickness 500nm are warmed up to, and growth pressure is 100torr.
4., in 1060 DEG C of temperature, 150torr grows one layer of 10 superlattices of cycle AlN/AlGaN, gross thickness 50nm.
5. in N-shaped AlGaN layer the thickness 500nm, pressure 200torr. of the temperature intrinsic doping silane of 1060 DEG C of one layer of growths
6. in nitrogen atmosphere 200torr, 1060 DEG C of growths, one layer of AlxGa1-xN/AlyGa1-yN(y>X) SQW barrier layer, often
The quantum well layer Al in individual cyclexGa1-xN and barrier layer AlyGa1-yN layers of thickness is respectively the Al components of 3nm and 8nm. wherein barrier layer
It is change in growth course, specially：8 y values of growth are respectively 0.4,0.45,0.5,0.55,0.6,0.65,0.7,0.75
Barrier layer AlyGa1-yN and well layer AlxGa1-xN(0<x<0.4)。
7. to 1000 DEG C, 150torr grows one layer of magnesium-doped p-type AlGaN layer, thickness 15nm to temperature.The Al groups of this layer
Divide content higher.
8. at 980 DEG C, the p-type AlGaN layer of the Mg doping of 100torr growths 70nm.
9., at 950 DEG C, 100torr grows one layer of p-type GaN layer of the Mg doping of 20nm.
10. under nitrogen atmosphere, anneal 15 minutes.
Growth course terminates.
Embodiment two
1. by Sapphire Substrate Special cleaning agent after, be put into MOCVD device 1100 DEG C toast 10 minutes.
2. 600 DEG C of cooling degree grows low temperature AI N layers of a layer thickness 10nm, and growth pressure is 100torr.
3. 1070 DEG C of high-temperature AlN layers of growth a layer thickness 500nm are warmed up to, and growth pressure is 100torr.
4., in 1060 DEG C of temperature, 150torr grows one layer of 10 superlattices of cycle AlN/AlGaN, gross thickness 50nm.
5. in N-shaped AlGaN layer the thickness 500nm, pressure 200torr. of the temperature intrinsic doping silane of 1060 DEG C of one layer of growths
6. in nitrogen atmosphere 200torr, 1060 DEG C of growths, one layer of AlxGa1-xN/AlyGa1-yN(y>X) SQW barrier layer, often
The quantum well layer Al in individual cyclexGa1-xN and barrier layer AlyGa1-yN layers of thickness is respectively the Al components of 3nm and 8nm. wherein barrier layer
It is change in growth course, specially grows the barrier layer Al of preceding 5 y=0.40.4Ga0.6N and well layer AlxGa1-xN(0<x<
0.4), then 3 barrier layer Al of y=0.7 after regrowth0.7Ga0.3N and well layer AlxGa1-xN(0<x<0.4)。
7. to 1000 DEG C, 150torr grows one layer of magnesium-doped p-type AlGaN layer, thickness 15nm to temperature.The Al groups of this layer
Divide content higher.
8. at 980 DEG C, the p-type AlGaN layer of the Mg doping of 100torr growths 70nm.
9., at 950 DEG C, 100torr grows one layer of p-type GaN layer of the Mg doping of 20nm.
10. under nitrogen atmosphere, anneal 15 minutes.
Growth course terminates.
Embodiment three
1. by Sapphire Substrate Special cleaning agent after, be put into MOCVD device 1100 DEG C toast 10 minutes.
2. 600 DEG C of cooling degree grows low temperature AI N layers of a layer thickness 10nm, and growth pressure is 100torr.
3. 1070 DEG C of high-temperature AlN layers of growth a layer thickness 500nm are warmed up to, and growth pressure is 100torr.
4., in 1060 DEG C of temperature, 150torr grows one layer of 10 superlattices of cycle AlN/AlGaN, gross thickness 50nm.
5. in N-shaped AlGaN layer the thickness 500nm, pressure 200torr. of the temperature intrinsic doping silane of 1060 DEG C of one layer of growths
6. in nitrogen atmosphere 200torr, 1060 DEG C of growths, one layer of AlxGa1-xN/AlyGa1-yN(y>X) SQW barrier layer, often
The quantum well layer Al in individual cyclexGa1-xN and barrier layer AlyGa1-yN layers of thickness is respectively the Al components of 3nm and 8nm. wherein barrier layer
It is change in growth course, specially grows the barrier layer Al of preceding 5 y=0.40.4Ga0.6N and well layer AlxGa1-xN(0<x<
0.4), then 3 y values are respectively the barrier layer Al of 0.5,0.6,0.7 after regrowthyGa1-yN and well layer AlxGa1-xN(0<x<0.4)。
7. to 1000 DEG C, 100torr grows one layer of magnesium-doped p-type AlGaN layer, thickness 15nm to temperature.The Al groups of this layer
Divide content higher.
8. at 980 DEG C, the p-type AlGaN layer of the Mg doping of 100torr growths 70nm.
9., at 950 DEG C, 100torr grows one layer of p-type GaN layer of the Mg doping of 20nm.
10. under nitrogen atmosphere, anneal 15 minutes.
Growth course terminates.
The epitaxial wafer grown according to three above embodiment is shown by identical chip manufacture process test result：Three
The more traditional method luminous efficiency of embodiment has all been lifted, and voltage reduction.Wherein best results of embodiment one, growth
Epitaxial chip luminous efficiency lifting 30%, and vf reductions by 15%, illustrate the compound and injection efficiency enhancing of hole and electronics.
It is emphasized that given in above example that the design parameter of preferred technique effect can be reached, but these
The design parameters such as temperature, thickness, pressure major part is the conventional selection done with reference to prior art, is not construed as to the present invention
The limitation of claims.The improved principle of the technology of the present invention is elaborated in specification, those skilled in the art should
It is able to recognize that under basic scheme doing appropriate adjustment to each design parameter remains able to realize the purpose of the present invention substantially.
Claims (4)
1. a kind of ultraviolet LED extension active area structure growing method, wherein growing several cycles AlxGa1-xN/AlyGa1-yN is measured
The link of sub- trap barrier layer is used as active area, y>X, wherein AlxGa1-xN is used as well layer, AlyGa1-yN is used as barrier layer；It is characterized in that：
Barrier layer AlyGa1-yThe Al components of N are incremented by change in active region growth process, i.e., y values start from a b finally, 1>b>a>x>0, its
The span of middle a is the 1/3~1/2 of b.
2. ultraviolet LED extension active area structure growing method according to claim 1, it is characterised in that：The incremental change
Change and be specially consecutive variations, graded or mixing graded.
3. ultraviolet LED extension active area structure growing method according to claim 2, it is characterised in that：The incremental change
Change and be specially consecutive variations.
4. a kind of ultraviolet LED epitaxial growth method, it is characterised in that comprise the following steps：
One layer of low temperature AI N of Grown on Sapphire Substrates；
One layer of high-temperature AlN of growth；
Grow several cycles AlN/AlGaN super lattice structure layers；
One layer of N-shaped AlGaN layer of doping silane of growth；
According to the ultraviolet LED extension active area structure growing method described in claim 1, several cycles Al is grownxGa1-xN/
AlyGa1-yN SQW barrier layer；
One layer of magnesium-doped p-type AlGaN barrier layer of growth；
One layer of magnesium-doped p-type GaN contact layer of growth；
Annealed under nitrogen atmosphere.
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| CN105048286A (en) * | 2015-09-11 | 2015-11-11 | 厦门市三安光电科技有限公司 | Gallium nitride-based laser diode and preparation method thereof |
| CN108231965B (en) * | 2018-02-06 | 2019-05-24 | 华南师范大学 | A kind of AlGaN base deep ultraviolet LED epitaxial structure improving light output |
| CN110911531B (en) * | 2018-09-14 | 2021-08-03 | 宁波安芯美半导体有限公司 | Light emitting diode epitaxial structure and light emitting diode |
| CN110911529B (en) * | 2018-09-14 | 2021-07-30 | 宁波安芯美半导体有限公司 | Growth method of epitaxial structure of light-emitting diode |
| CN110364595B (en) * | 2019-07-22 | 2022-04-22 | 宁波安芯美半导体有限公司 | Light emitting diode epitaxial structure and preparation method thereof |
| CN110867727B (en) * | 2019-11-28 | 2021-05-11 | 厦门乾照半导体科技有限公司 | Growth method of high-gain active region and growth method of VCSEL |
| CN111129243B (en) * | 2019-12-02 | 2024-05-17 | 晶能光电股份有限公司 | GaN-based ultraviolet LED epitaxial structure |
| CN113140960B (en) * | 2021-03-31 | 2022-04-01 | 西安瑞芯光通信息科技有限公司 | Ultraviolet VCSEL chip based on compound semiconductor material and manufacturing method |
| CN114335278B (en) * | 2022-03-16 | 2022-08-05 | 至芯半导体(杭州)有限公司 | Epitaxial structure of UVB chip and application thereof |
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