CN204668346U - LED epitaxial structure - Google Patents
LED epitaxial structure Download PDFInfo
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- CN204668346U CN204668346U CN201520439065.6U CN201520439065U CN204668346U CN 204668346 U CN204668346 U CN 204668346U CN 201520439065 U CN201520439065 U CN 201520439065U CN 204668346 U CN204668346 U CN 204668346U
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Abstract
The utility model provides a kind of LED epitaxial structure, and described LED epitaxial structure comprises from bottom to top successively: substrate, N-type GaN layer, MQW active layer, electronic barrier layer, P type GaN layer; Between described MQW active layer and described electronic barrier layer, also growth has polarization doping barrier layer, and described polarization doping barrier layer is Al
xga
(1-x)n barrier layer, described Al
xga
(1-x)in N barrier layer, the molar content of Al is successively decreased from the lower surface contacted with described MQW active layer to the upper surface contacted with described electronic barrier layer.The utility model adopts new polarization doping barrier layer to replace traditional low temperature u-AlGaN layer, and described polarization doping barrier layer is Al
xga
(1-x)n barrier layer, described Al
xga
(1-x)in N barrier layer, the molar content of Al is successively decreased from the lower surface contacted with described MQW active layer to the upper surface contacted with described electronic barrier layer, and reduce extinction, favourable bright dipping, reduces single stove time simultaneously, promotes production capacity; Further, polarization doping barrier layer forms the energy level reduced gradually, is conducive to the injection in hole, improves combined efficiency.
Description
Technical field
The utility model relates to technical field of semiconductor luminescence, particularly relates to a kind of LED epitaxial structure.
Background technology
Light-emitting diode (Light-Emitting Diode, LED), as a kind of efficient, environmental protection and green New Solid lighting source, has that volume is little, lightweight, the life-span is long, reliability is high and use the advantages such as low in energy consumption, makes it be able to extensive use.Especially, along with the fast development of LED industry, LED is more and more higher at the application proportion of lighting field.Along with high-power LED chip is in lighting field extensive use, require to grow with each passing day to high-power LED chip luminous efficiency; Accordingly, improve high-power LED chip luminous efficiency, the brightness of high-power chip will be improved on the one hand, high-power chip operating voltage at higher current densities will be reduced on the one hand in addition.
High-temperature electronic barrier layer in LED structure has destruction to MQW active layer; usually take to grow between the thicker and uAlGaN of low temperature of one deck to protect MQW active layer; but; after design like this; single stove time of LED chip can be increased; increase extinction simultaneously, affect its luminosity.
Utility model content
The purpose of this utility model is to provide a kind of LED epitaxial structure.
To achieve these goals, the utility model one execution mode provides a kind of LED epitaxial structure, and described LED epitaxial structure comprises: substrate, N-type GaN layer, MQW active layer, electronic barrier layer, P type GaN layer; Between described MQW active layer and described electronic barrier layer, also growth has polarization doping barrier layer, and described polarization doping barrier layer is Al
xga
(1-x)n barrier layer, described Al
xga
(1-x)in N barrier layer, the molar content of Al is successively decreased from the lower surface contacted with described MQW active layer to the upper surface contacted with described electronic barrier layer.
As the further improvement of present embodiment, described Al
xga
(1-x)the thickness of N barrier layer is 8 ~ 30nm.
As the further improvement of present embodiment, described Al
xga
(1-x)the thickness of N barrier layer is 8 ~ 20nm.
As the further improvement of present embodiment, described Al
xga
(1-x)the thickness of N barrier layer is 12nm.
As the further improvement of present embodiment, described Al
xga
(1-x)in the lower surface that N barrier layer contacts with described MQW active layer, the span of described x is 10% ~ 20%;
Described Al
xga
(1-x)in the upper surface that N barrier layer contacts with described electronic barrier layer, the span of described x is 0% ~ 4%.
As the further improvement of present embodiment, described Al
xga
(1-x)in the lower surface that N barrier layer contacts with described MQW active layer, the span of described x is 10% ~ 15%;
Described Al
xga
(1-x)in the upper surface that N barrier layer contacts with described electronic barrier layer, the span of described x is 0% ~ 4%.
As the further improvement of present embodiment, described Al
xga
(1-x)in the lower surface that N barrier layer contacts with described MQW active layer, the value of described x is 12%, described Al
xga
(1-x)in the upper surface that N barrier layer contacts with described electronic barrier layer, the value of described x is 2%.
As the further improvement of present embodiment, described Al
xga
(1-x)in N barrier layer, the molar content of Al is from the lower surface contacted with described MQW active layer to the upper surface linear decrease contacted with described electronic barrier layer.
Compared with prior art, the beneficial effects of the utility model are: LED epitaxial structure of the present utility model, adopt new polarization doping barrier layer to replace traditional low temperature u-AlGaN layer, and described polarization doping barrier layer is Al
xga
(1-x)n barrier layer, described Al
xga
(1-x)in N barrier layer, the molar content of Al is successively decreased from the lower surface contacted with described MQW active layer to the upper surface contacted with described electronic barrier layer, and reduce extinction, favourable bright dipping, reduces single stove time simultaneously, promotes production capacity; Further, polarization doping barrier layer forms the energy level reduced gradually, is conducive to the injection in hole, improves combined efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of LED epitaxial structure in the utility model one execution mode;
Fig. 2 is the schematic flow sheet of the preparation method of LED epitaxial structure in the utility model one execution mode;
Fig. 3 is the change curve schematic diagram of molar content of Al in polarization doping barrier layer in LED epitaxial structure in the utility model one execution mode;
Fig. 4 is the brightness contrast test data of chip of the LED epitaxial structure of the utility model one execution mode and the LED epitaxial structure of prior art.
Embodiment
Below with reference to embodiment shown in the drawings, the utility model is described in detail.But these execution modes do not limit the utility model, the structure that those of ordinary skill in the art makes according to these execution modes, method or conversion functionally are all included in protection range of the present utility model.
As shown in Figure 1, the LED epitaxial structure that the utility model provides, LED epitaxial structure comprises from bottom to top successively: substrate 10, N-type GaN layer 20, MQW active layer 30, doping barrier layer 40, electronic barrier layer 50, P type GaN layer 60.
In the utility model one execution mode, the material of substrate 10 is Sapphire Substrate, and certainly, in other execution modes of the present utility model, substrate 10 can be also other backing materials, as Si, SiC etc.
In the utility model one execution mode, N-type GaN layer 20 is high temperature N-type GaN layer preferably.
In the utility model one execution mode, MQW active layer 30 comprises: the well layer of 6-8 the multiple quantum well layer generated successively from bottom to top and the InGaN of growth on 6-8 multiple quantum well layer.
In the utility model one execution mode, doping barrier layer 40 is Al
xga
(1-x)n barrier layer, described Al
xga
(1-x)in N barrier layer, the molar content of Al is successively decreased from the lower surface contacted with MQW active layer 30 to the upper surface contacted with described electronic barrier layer 50.
In the utility model one execution mode, described Al
xga
(1-x)the thickness of N barrier layer is 8 ~ 30nm.
Further, described Al
xga
(1-x)the thickness of N barrier layer is 8 ~ 20nm.
In the utility model one execution mode, described Al
xga
(1-x)in the lower surface that N barrier layer contacts with MQW active layer 30, the span of described x is 10% ~ 20%;
Described Al
xga
(1-x)n barrier layer contacts in the upper surface of 50 with electronic barrier layer, and the span of described x is 0% ~ 4%.
Further, described Al
xga
(1-x)in the lower surface that N barrier layer contacts with described MQW active layer 30, the span of described x is 10% ~ 15%;
Described Al
xga
(1-x)in the upper surface that N barrier layer contacts with electronic barrier layer 50, the span of described x is 0% ~ 4%.
Further, described Al
xga
(1-x)in the lower surface that N barrier layer contacts with MQW active layer 30, the value of described x is 12%, described Al
xga
(1-x)in the upper surface that N barrier layer contacts with electronic barrier layer 50, the value of described x is 2%.
In the utility model one execution mode, shown in composition graphs 3, described Al
xga
(1-x)in N barrier layer, the molar content of Al is from the lower surface contacted with MQW active layer 30 to the upper surface linear decrease contacted with electronic barrier layer 50.Certainly, in other execution modes of the present utility model, described Al
xga
(1-x)in N barrier layer, the molar content of Al is interrupted from the lower surface contacted with MQW active layer 30 to the upper surface contacted with electronic barrier layer 50 and is successively decreased, or non-linearly successively decreases.So, adopt new polarization doping barrier layer 40 to replace traditional low temperature u-AlGaN layer, reduce extinction, favourable bright dipping, reduces single stove time simultaneously, promotes production capacity; Further, make polarization doping barrier layer 40 form the energy level reduced gradually, be conducive to the injection in hole, improve combined efficiency.
In the utility model one execution mode, electronic barrier layer 50 is P type AlGaN electronic barrier layer preferably.
In the utility model one execution mode, the preferred high temperature P type GaN of P type GaN layer 60.
On the basis of LED epitaxial structure shown in above-mentioned Fig. 1, in the utility model one execution mode, described LED epitaxial structure also comprises: be grown on the nucleating layer 701 between substrate 10 and N-type GaN layer 20.
Wherein, nucleating layer 701 is low temperature GaN nucleating layer preferably, and using TMGa as Ga source.
On the basis of LED epitaxial structure shown in above-mentioned Fig. 1, in the utility model one execution mode, described LED epitaxial structure also comprises: be grown on the nitride buffer layer 703 between substrate 10 and N-type GaN layer 20.
Nitride buffer layer 703 can be GaN resilient coating or AlN resilient coating; In the utility model preferred implementation, nitride buffer layer 703 for thickness be the high temperature GaN resilient coating between 0.5-1um; Certainly, in other execution modes of the present utility model, the low temperature GaN buffer grown under the high temperature GaN resilient coating that GaN resilient coating grows under can also comprising hot conditions and cryogenic conditions, is not described in detail at this.
On the basis of LED epitaxial structure shown in above-mentioned Fig. 1, in the utility model one execution mode, described LED epitaxial structure also comprises: be grown on the undoped GaN layer 705 between substrate 10 and N-type GaN layer 20; In the utility model preferred implementation, undoped GaN layer 705 is undoped high temperature u-GaN layer.
Certainly, on the basis of LED epitaxial structure shown in above-mentioned Fig. 1, in other execution modes of the present utility model, above-mentioned nucleating layer 701, nitride buffer layer 703, undoped GaN layer 705 can also combination in any join in LED epitaxial structure, such as: LED epitaxial structure comprises from bottom to top successively: substrate 10, nucleating layer 701, nitride buffer layer 703, undoped GaN layer 705, N-type GaN layer 20, MQW active layer 30, doping barrier layer 40, electronic barrier layer 50, P type GaN60 layer, be not described in detail at this.
On the basis of LED epitaxial structure shown in above-mentioned Fig. 1, in the utility model one execution mode, described LED epitaxial structure also comprises: be grown on the ohmic contact layer 80 in P type GaN layer 60, in the utility model preferred implementation, ohmic contact layer 80 is P type GaN contact layer, further, ohmic contact layer 80 is high pressure p-type InGaN layer, is not described in detail at this.
Shown in composition graphs 2, in the utility model one execution mode, disclose a kind of preparation method of LED epitaxial structure, described method comprises:
S1, provide a substrate,
S2, over the substrate growth N-type GaN layer,
S3, in described N-type GaN layer, grow MQW active layer,
S4, on described MQW active layer growth polarization doping barrier layer,
S5, in described polarization doping barrier layer, grow electronic barrier layer,
S6, on described electronic barrier layer growth P-type GaN layer;
Wherein, described polarization doping barrier layer is Al
xga
(1-x)n barrier layer, described Al
xga
(1-x)in N barrier layer, the molar content of Al is successively decreased from the lower surface contacted with described MQW active layer to the upper surface contacted with described electronic barrier layer.
In the utility model one execution mode, after described step S1, described method also comprises: S71, in described N-type GaN layer, grow into stratum nucleare;
S72, on described nucleating layer growing nitride resilient coating;
S73, on described nitride buffer layer, grow undoped GaN layer;
Certainly, in the utility model one execution mode, described step S71, all right combination in any of S72, S73:
Such as: after described step S1, described method also comprises: S71, in described N-type GaN layer, grow into stratum nucleare;
Or S72, growing nitride resilient coating in described N-type GaN layer;
Or S73, on described nitride buffer layer, grow undoped GaN layer; Be not described in detail at this.
In the utility model one execution mode, after described step S6, described method also comprises:
S8, in described P type GaN layer, grow ohmic contact layer.
It should be noted that, the concrete component of the substrate prepared by said method, nucleating layer, nitride buffer layer, undoped GaN layer, N-type GaN layer, MQW active layer, doping barrier layer, electronic barrier layer, P type GaN layer with reference to aforementioned LED epitaxial structure, can be described in detail at this.
Below in conjunction with embodiment, the utility model is described in further detail.
In the present embodiment, the preparation method of LED epitaxial structure specifically comprises:
M1, provide a substrate;
Described substrate is Sapphire Substrate, anneals in hydrogen atmosphere, and clean sapphire substrate surface, temperature controls, between 1050-1100 DEG C, then to carry out nitrogen treatment 1-3min.
M2, in described N-type GaN layer, grow into stratum nucleare;
Temperature is dropped between 500-550 DEG C, described N-type GaN layer grows the low temperature GaN nucleating layer that 15-25nm is thick, and growth pressure controls at 500Torr, and V/III mol ratio is between 80-120, graphite plate stabilization of speed at 600 revs/min, and using TMGa as Ga source.
M3, on described nucleating layer, grow into nitride buffer layer;
Carry out in-situ annealing process, on described nucleating layer, growth thickness is the high temperature GaN resilient coating between 0.5-1um.
M4, on described nitride buffer layer, grow undoped GaN layer;
Described nitride buffer layer grows one deck undoped high temperature u-GaN layer.
M5, on described nitride buffer layer, grow N-type GaN layer;
Described nitride buffer layer grows one deck high temperature N-type GaN layer.
M6, in described N-type GaN layer, grow MQW active layer;
After the growth of described high temperature N-type GaN layer terminates, grow 6 ~ 8 multiple quantum well layers, afterwards the well layer of last InGaN of regrowth on described 6 ~ 8 multiple quantum well layers.
M7, on described MQW active layer growth polarization doping barrier layer;
Growth temperature controls at 840 ~ 880 DEG C, and growth pressure controls at 200torr, and described MQW active layer grows the Al that a linear gradient successively decreases gradually
xga
(1-x)n barrier layer, described Al
xga
(1-x)in the lower surface that N barrier layer contacts with described MQW active layer, the value of described x is 12%, described Al
xga
(1-x)in the upper surface of N barrier layer, the value of described x is 2%, described Al
xga
(1-x)the thickness of N barrier layer is 12nm.
M8, in described polarization doping barrier layer, grow electronic barrier layer;
Growing P-type AlGaN electronic barrier layer in described polarization doping barrier layer.
M9, on described electronic barrier layer growth P-type GaN layer;
Described electronic barrier layer grows high temperature P type GaN.
M10, in described P type GaN layer, grow ohmic contact layer;
Described P type GaN layer grows high-voltage P-type GaN contact layer.
Above-mentioned execution mode is only a preferred implementation, in other execution modes of the present utility model, the thickness of described doping barrier layer, the scope that the molar content of the Al of described doping barrier layer changes from the lower surface contacted with described MQW active layer to the upper surface contacted with described electronic barrier layer, and the span etc. of x all can be set to other numerical value or kind according to demand, repeats no longer further at this.
Shown in composition graphs 4, in the utility model execution mode and prior art, two kinds of structures adopt identical chips processing procedures, (drive current 150mA) tests under identical testing conditions, wherein, sample A is the LED epitaxial structure of prior art, and sample B is the LED epitaxial structure of the utility model execution mode.
As shown in Figure 4, in present embodiment, the luminosity (LOP) of LED epitaxial structure promotes 3.3mW(1.5% compared with the luminosity (LOP) of LED epitaxial structure in prior art).
In sum, LED epitaxial structure of the present utility model, adopts new polarization doping barrier layer to replace traditional low temperature u-AlGaN layer, and described polarization doping barrier layer is Al
xga
(1-x)n barrier layer, described Al
xga
(1-x)in N barrier layer, the molar content of Al is successively decreased from the lower surface contacted with described MQW active layer to the upper surface contacted with described electronic barrier layer, and reduce extinction, favourable bright dipping, reduces single stove time simultaneously, promotes production capacity; Further, polarization doping barrier layer forms the energy level reduced gradually, is conducive to the injection in hole, improves combined efficiency.
Be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, technical scheme in each execution mode also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
A series of detailed description listed is above only illustrating for feasibility execution mode of the present utility model; they are also not used to limit protection range of the present utility model, all do not depart from the utility model skill equivalent implementations of doing of spirit or change all should be included within protection range of the present utility model.
Claims (8)
1. a LED epitaxial structure, is characterized in that, described LED epitaxial structure comprises from bottom to top successively:
Substrate, N-type GaN layer, MQW active layer, electronic barrier layer, P type GaN layer; Between described MQW active layer and described electronic barrier layer, also growth has polarization doping barrier layer, and described polarization doping barrier layer is Al
xga
(1-x)n barrier layer, described Al
xga
(1-x)in N barrier layer, the molar content of Al is successively decreased from the lower surface contacted with described MQW active layer to the upper surface contacted with described electronic barrier layer.
2. LED epitaxial structure according to claim 1, is characterized in that,
Described Al
xga
(1-x)the thickness of N barrier layer is 8 ~ 30nm.
3. LED epitaxial structure according to claim 2, is characterized in that,
Described Al
xga
(1-x)the thickness of N barrier layer is 8 ~ 20nm.
4. LED epitaxial structure according to claim 3, is characterized in that,
Described Al
xga
(1-x)the thickness of N barrier layer is 12nm.
5. LED epitaxial structure according to claim 1, is characterized in that,
Described Al
xga
(1-x)in the lower surface that N barrier layer contacts with described MQW active layer, the span of described x is 10% ~ 20%;
Described Al
xga
(1-x)in the upper surface that N barrier layer contacts with described electronic barrier layer, the span of described x is 0% ~ 4%.
6. LED epitaxial structure according to claim 5, is characterized in that,
Described Al
xga
(1-x)in the lower surface that N barrier layer contacts with described MQW active layer, the span of described x is 10% ~ 15%;
Described Al
xga
(1-x)in the upper surface that N barrier layer contacts with described electronic barrier layer, the span of described x is 0% ~ 4%.
7. LED epitaxial structure according to claim 6, is characterized in that,
Described Al
xga
(1-x)in the lower surface that N barrier layer contacts with described MQW active layer, the value of described x is 12%, described Al
xga
(1-x)in the upper surface that N barrier layer contacts with described electronic barrier layer, the value of described x is 2%.
8. LED epitaxial structure according to claim 1, is characterized in that,
Described Al
xga
(1-x)in N barrier layer, the molar content of Al is from the lower surface contacted with described MQW active layer to the upper surface linear decrease contacted with described electronic barrier layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934507A (en) * | 2015-06-25 | 2015-09-23 | 聚灿光电科技股份有限公司 | Light-emitting diode (LED) epitaxial structure and fabrication method thereof |
| CN112467004A (en) * | 2020-10-31 | 2021-03-09 | 扬州大学 | GaN-based LED epitaxial structure containing electronic storage layer and growth method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934507A (en) * | 2015-06-25 | 2015-09-23 | 聚灿光电科技股份有限公司 | Light-emitting diode (LED) epitaxial structure and fabrication method thereof |
| CN112467004A (en) * | 2020-10-31 | 2021-03-09 | 扬州大学 | GaN-based LED epitaxial structure containing electronic storage layer and growth method thereof |
| CN112467004B (en) * | 2020-10-31 | 2022-06-07 | 扬州大学 | GaN-based LED epitaxial structure containing electronic storage layer and growth method thereof |
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