CN103972341B - Nitride semiconductor structure and semiconductor light-emitting elements - Google Patents
Nitride semiconductor structure and semiconductor light-emitting elements Download PDFInfo
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- CN103972341B CN103972341B CN201310029679.2A CN201310029679A CN103972341B CN 103972341 B CN103972341 B CN 103972341B CN 201310029679 A CN201310029679 A CN 201310029679A CN 103972341 B CN103972341 B CN 103972341B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 33
- 239000010410 layer Substances 0.000 claims abstract description 198
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000011229 interlayer Substances 0.000 claims abstract description 12
- 230000004888 barrier function Effects 0.000 claims description 32
- 229910002601 GaN Inorganic materials 0.000 claims description 29
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 28
- 230000005611 electricity Effects 0.000 claims description 23
- 238000010276 construction Methods 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical group [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 description 13
- 238000000605 extraction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- -1 Magnesium gallium nitride series Chemical class 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005293 physical law Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention is related to a kind of nitride semiconductor structure and semiconductor light-emitting elements.This nitride semiconductor structure includes one first type doping semiconductor layer and a Second-Type doping semiconductor layer, it is configured with a luminescent layer in the first type doping semiconductor layer and Second-Type doped semiconductor interlayer, wherein Second-Type doping semiconductor layer is more than 5 × 10 doped with concentration19cm‑3Second-Type admixture, and Second-Type doping semiconductor layer has the thickness less than 30nm.This semiconductor light-emitting elements includes at least above-mentioned nitride semiconductor structure on a substrate, and two the first type electrode and the Second-Type electrodes cooperatively providing electric energy.As a result, semiconductor light-emitting-diode can obtain more preferably luminous efficiency.
Description
Technical field
The present invention is related to a kind of nitride semiconductor structure and semiconductor light-emitting elements, refer in particular to one kind have highly doped
The Second-Type doping semiconductor layer of concentration is (more than 5 × 1019cm-3), and its thickness be less than 30nm nitride semiconductor structure and
Semiconductor light-emitting elements, belong to technical field of semiconductors.
Background technology
In general, iii-nitride light emitting devices are a cushion to be initially formed on substrate, on cushion sequentially
Epitaxy growth N-shaped gallium nitride (n-GaN) layer, luminescent layer and p-type gallium nitride (p-GaN) layer；Then, using lithographic and etching work
Skill removes the p-type gallium nitride layer of part, the luminescent layer of part, till exposing the n-type gallium nitride layer of part；Then, divide
On the expose portion and p-type gallium nitride layer of n-type gallium nitride layer, do not form n-type electrode and p-type electrode, and produce luminous two
Pole pipe；Wherein, luminescent layer has multiple quantum well construction (MQW), and multiple quantum well construction includes replacing in a repetitive fashion
The quantum well layers (well) of setting and quantum barrier layer (barrier), it is relatively low that prisoner has relative quantum barrier layer for quantum well layers
Energy gap so that electronics and electricity can be limited on quantum mechanics in each of above-mentioned multiple quantum well construction quantum well layers
Hole, causes electronics and electric hole to inject from n-type gallium nitride layer and p-type gallium nitride layer respectively, and combines in quantum well layers, and launch
Go out light particle.
It is known that the brightness of light emitting diode depends on internal quantum and light extraction efficiency, wherein Internal Quantum
The ratio that efficiency combines for electrons and holes；However, because the refractive index of air and gallium nitride material is respectively 1 and 2.4 about,
According to total reflection physical law, the light emitting diode of gallium nitride can allow light project the critical angle of surface air inlet only about
24 degree about, lead to light extraction efficiency to be about 4.34% so that light prisoner is by gallium nitride produced by lumination of light emitting diode layer
With the total reflection of air interface, and it is confined to LED internal, cause light extraction efficiency substantially low；Therefore, many is ground
Study carefully the method proposing to increase light extraction efficiency：The such as first is surface-treated in p-type gallium nitride layer, to destroy total reflection bar
Part, and then improve light extraction efficiency, and be wherein surface-treated and can be for example surface coarsening, change pattern of light emitting diode etc.；
It two is to separate n-type gallium nitride layer with substrate, then forms coarse structure in n-type gallium nitride layer, finally recycles colloid
Gallium nitride semiconductor layers are sticked back on substrate, thus improves light extraction efficiency；However, said method one can only be to light emitting diode
The p-type gallium nitride semiconductor layers that the top of chip is exposed deal with so that light extraction efficiency is still to be subject to a certain degree of limit
System；And method two process is quite numerous and diverse, and also must lead in view of the problem of colloid poor heat radiation with above-mentioned two methods making
Its whole lighting efficiency of light emitting diode cannot effectively be lifted.
Further, since the doping content of p-type gallium nitride layer cannot effectively improve, lead to its resistance value bigger than normal so that working as
When electric current is conducted to GaN semiconductor layer by metal electrode, electric current cannot reach good current spread in p-type gallium nitride layer,
Can be limited under metal electrode (n-type electrode and p-type electrode) when electric current dispersed cannot also result in luminous region
Side, also results in light-emitting diode luminous efficiency and is greatly lowered.
In view of above-mentioned existing nitride semiconductor luminescent element still has the shortcomings that many places on actual enforcement, prisoner this,
Developing a kind of new nitride semiconductor structure and semiconductor light-emitting elements is still one of this area problem demanding prompt solution.
Content of the invention
For solving the above problems, for providing a kind of nitride semiconductor structure, it mixes main purpose of the present invention in Second-Type
Miscellaneous semiconductor layer has the Second-Type admixture of high-dopant concentration (more than 5 × 1019cm-3), and its thickness is less than 30nm, to be lifted
Light extraction efficiency.
For providing a kind of semiconductor light-emitting elements, it includes at least has above-mentioned nitride partly to lead to another object of the present invention
Body structure is so that semiconductor light-emitting elements obtain good luminous efficiency.
For reaching above-mentioned purpose, the present invention provides a kind of nitride semiconductor structure, and it consists predominantly of one first type doping
Semiconductor layer and a Second-Type doping semiconductor layer, in described first type doping semiconductor layer and described Second-Type doped semiconductor
Interlayer is configured with a luminescent layer, and wherein, described Second-Type doping semiconductor layer is more than 5 × 10 doped with concentration19cm-3Second
Type admixture (preferably, this Second-Type admixture is magnesium), and the thickness of described Second-Type doping semiconductor layer is less than 30nm.Wherein,
Preferably, described Second-Type doping semiconductor layer is to be formed under the relatively high pressure more than 300torr.
Specific embodiment according to the present invention is it is preferable that in above-mentioned nitride semiconductor structure, can light in described
Layer and described Second-Type doped semiconductor interlayer are configured with an electric hole and provide layer, and it is nitridation aluminum steel gallium that described electricity hole provides layer
AlxInyGa1-x-yN, wherein 0 ＜ x ＜ 1,0 ＜ y ＜ 1,0 ＜ x+y ＜ 1, and described electricity hole provides layer to be more than doped with concentration
1018cm-3Second-Type admixture.
Specific embodiment according to the present invention is it is preferable that in above-mentioned nitride semiconductor structure, described electricity hole provides
Layer can be 10 doped with concentration17-1020cm-3The 4th major element, thus provide more electric hole to enter luminescent layer, Jin Erzeng
Plus electronics electricity hole combines probability.
Specific embodiment according to the present invention is it is preferable that in above-mentioned nitride semiconductor structure, described luminescent layer has
There is multiple quantum well construction, and described electricity hole provides the energy gap of layer more than the energy gap of the well layer of described multiple quantum well construction, makes
Obtaining described electricity hole provides the electric hole of layer can enter in the well layer of described multiple quantum well construction, to increase electrons and holes combination
Probability, further improving luminous efficiency.
Specific embodiment according to the present invention is it is preferable that in above-mentioned nitride semiconductor structure, described luminescent layer has
There is multiple quantum well construction, and described multiple quantum well construction comprises well layer and the barrier layer of multiple storehouses alternating with each other, and often
Barrier interlayer described in two-layer has well layer described in, and described barrier layer is AlxInyGa1-x-yN, wherein x and y meet 0 ＜ x ＜ 1,0
The numerical value of ＜ y ＜ 1,0 ＜ x+y ＜ 1, and described well layer is InzGa1-zN, wherein 0 ＜ z ＜ 1.It is highly preferred that wherein, described well
Layer has the thickness of 3.5nm-7nm.Particularly preferably, described barrier layer is 10 doped with concentration16-1018cm-3The first type mix
Matter.
Specific embodiment according to the present invention is it is preferable that in above-mentioned nitride semiconductor structure, described electricity hole provides
Layer and described Second-Type doped semiconductor interlayer are configured with a Second-Type carrier barrier layer, and described Second-Type carrier barrier layer is
AlxGa1-xN, wherein 0 ＜ x ＜ 1；Preferably, in above-mentioned nitride semiconductor structure, described luminescent layer is mixed with described first type
It is configured with one first type carrier barrier layer between miscellaneous semiconductor layer, and described first type carrier barrier layer is AlxGa1-xN, wherein 0 ＜
X ＜ 1；Thus, using the band gap of the AlGaN containing the aluminum characteristic high compared with GaN so that carrier can be confined to multiple quantum trap
In structure, improve the laminating probability of electronics electricity hole, and then reach effect of luminous efficiency lifting.
The present invention also provides a kind of semiconductor light-emitting elements, and it includes at least has：
One substrate；
One first type doping semiconductor layer, it is configured on described substrate；
One luminescent layer, it is configured on described first type doping semiconductor layer；
One Second-Type doping semiconductor layer, it is configured on described luminescent layer, described Second-Type doping semiconductor layer doping
Concentration is had to be more than 5 × 1019cm-3Second-Type admixture, and its thickness be less than 30nm；
One first type electrode, it is configured on described first type doping semiconductor layer with Ohmic contact；And
One Second-Type electrode, it is configured on described Second-Type doping semiconductor layer with Ohmic contact.
The semiconductor light-emitting elements of the present invention include at least above-mentioned nitride semiconductor structure on a substrate, and two
First type electrode and the Second-Type electrode of electric energy are cooperatively provided；Thus, due to Second-Type doping semiconductor layer thickness relatively
Thin so that close together between Second-Type electrode and luminous layer surface, cause photon and the surface plasma prisoner being produced by luminescent layer
Produced by resonance, coupling ability is stronger, so can improving luminous efficiency；Furthermore, more because Second-Type doping semiconductor layer has
There is the Second-Type admixture of relatively conventional p-type gallium nitride layer higher concentration, lead to its resistance value relatively low so that when electric current is by the
When two type electrodes conduct to the first type electrode, reach effect of the uniform diffusion of electric current in Second-Type doping semiconductor layer, also so that
Light emitting diode can obtain more preferably luminous efficiency.
Brief description
The generalized section of the nitride semiconductor structure that Fig. 1 provides for a preferred embodiment of the present invention.
Fig. 2 is the semiconductor light emitting element according to made by the nitride semiconductor structure that the preferred embodiments of the present invention provide
The generalized section of part.
Primary clustering symbol description：
1 substrate 2 cushion
3 first type doping semiconductor layer 31 first type electrode
4 first type carrier barrier layers
5 luminescent layers
51 well layer 52 barrier layer
6 Second-Type carrier barrier layers
7 Second-Type doping semiconductor layer 71 Second-Type electrode
8 electric holes provide layer
Specific embodiment
The purpose of the present invention and its structure design advantage functionally, will be said according to the following drawings and preferred embodiment
Bright, to have to the present invention deeper into and specifically to understand.
First, point out that one layer (or film) or a structure configure another it will be appreciated that working as in the following description
Individual substrate, another layer (or film) or another structure " on " or during D score, its can " direct " be located at other substrates, layer (or film) or
Another structure, is had also or between the two more than one intermediate layer and is configured in " indirect " mode, can refer to brief description each
The position that layer is located.
Refer to shown in Fig. 1, the section of its nitride semiconductor structure providing for a preferred embodiment of the present invention shows
It is intended to, it includes one first type doping semiconductor layer 3 and Second-Type doping semiconductor layer 7, in the first type doping semiconductor layer 3
It is configured with a luminescent layer 5 and between Second-Type doping semiconductor layer 7, wherein Second-Type doping semiconductor layer 7 is more than 5 doped with concentration
×1019cm-3Second-Type admixture, and its thickness be less than 30nm, wherein Second-Type admixture may be, for example, magnesium or zinc, preferably magnesium.
Additionally, the material of above-mentioned first type doping semiconductor layer 3 may be, for example, silicon or Ge-doped gallium nitride series material
(as N-shaped doped gallium nitride based semiconductor layer), and Second-Type doping semiconductor layer 7 can be more than 5 × 10 doped with concentration19cm-3
Magnesium gallium nitride series material (as p-type doped gallium nitride based semiconductor layer), here does not limit；And the first type doping half
The method that conductor layer 3, Second-Type doping semiconductor layer 7 are formed can be for example and carries out Metalorganic chemical vapor deposition method
(metalorganic chemical vapor deposition；), and Second-Type doping semiconductor layer 7 must be in phase MOCVD
Formed under high pressure (more than 300torr).
Furthermore, being configured with an electric hole between luminescent layer 5 and Second-Type doping semiconductor layer 7 provides layer 8, and electric hole offer layer 8 is
Nitridation aluminum steel gallium AlxInyGa1-x-yN, wherein 0 ＜ x ＜ 1,0 ＜ y ＜ 1,0 ＜ x+y ＜ 1, and electric hole provides layer 8 doped with concentration
More than 1018cm-3Second-Type admixture (for example, magnesium or zinc)；Additionally, it is 10 doped with concentration that electric hole provides layer 817-1020cm-3
The 4th major element (preferably carbon), replace the nitrogen-atoms of pentavalent using carbon (4A race), thus many positively charged electricity holes, make
Obtaining electric hole provides layer 8 can have high electricity hole concentration, thus provides more electric hole entrance luminescent layer 5, and then increases electronics electricity hole
In conjunction with probability；Furthermore, luminescent layer 5 is multiple quantum well construction, and electric hole provides the energy gap (bandgap energy) of layer 8 big
In the well layer 51 of multiple quantum well construction energy gap so that electric hole provides the electric hole of layer 8 can enter in multiple quantum well construction
In well layer 51, combine probability to increase electrons and holes, further improving luminous efficiency.
Additionally, joining greatly produced stress to reduce well layer and barrier interlayer lattice in multiple quantum well construction,
The barrier layer 52 of above-mentioned multiple quantum well construction can be replaced the Al of quaternary materialxInyGa1-x-yN, wherein x and y system meet 0 ＜ x
＜ 1,0 ＜ y ＜ 1, the numerical value of 0 ＜ x+y ＜ 1, and well layer 51 can be replaced the In of ternary materialzGa1-zN, wherein 0 ＜ z ＜ 1, profit
There is the characteristic of same steel element with the well layer of the barrier layer and ternary nitrated steel gallium that nitrogenize aluminum steel gallium of quaternary material, adjustable
Whole quaternary forms condition to provide the composition of Lattice Matching so that barrier layer is more close with the lattice paprmeter of well layer, this well of prisoner
Layer 51 can have the thickness of 3.5nm-7nm, and barrier layer 52 can be further doped with concentration for 1016-1018cm-3The first type mix
Matter (for example, silicon or germanium), so that barrier layer can reduce carrier capture-effect, more increases carrier confinement effect.
In addition, above-mentioned nitride semiconductor structure provides in electric hole being configured between layer 8 and Second-Type doping semiconductor layer 7
One Second-Type carrier barrier layer 6, Second-Type carrier barrier layer 6 is AlxGa1-xN, wherein 0 ＜ x ＜ 1, and luminescent layer 5 and the first type
It is configured with one first type carrier barrier layer 4 between doping semiconductor layer 3, and the first type carrier barrier layer 4 is AlxGa1-xN, wherein 0
＜ x ＜ 1；Thus, using the band gap of the AlGaN containing the aluminum characteristic high compared with GaN so that carrier can be confined to multiple quantum
In well construction, improve the laminating probability of electronics electricity hole, and then reach the effect increasing luminous efficiency.
Referring again to shown in Fig. 2, above-mentioned nitride semiconductor structure can be applicable in semiconductor light-emitting elements, and Fig. 2 is
The section of the semiconductor light-emitting elements made by nitride semiconductor structure that the above preferred embodiment according to the present invention provides
Schematic diagram, described semiconductor light-emitting elements include at least to be had：
One substrate 1；The material of wherein substrate 1 can be for example sapphire (sapphire), silicon, SiC, ZnO or GaN substrate
Deng；
One first type doping semiconductor layer 3, it is configured on substrate 1；Wherein, the material of the first type doping semiconductor layer 3
May be, for example, silicon or Ge-doped gallium nitride series material；
One luminescent layer 5, it is configured on the first type doping semiconductor layer 3；
One Second-Type doping semiconductor layer 7, it is configured on luminescent layer 5, and Second-Type doping semiconductor layer 7 is doped with concentration
More than 5 × 1019cm-3Second-Type admixture, and its thickness be less than 30nm；
One first type electrode 31, it is configured on the first type doping semiconductor layer 3 with Ohmic contact；And
One Second-Type electrode 71, it is configured on Second-Type doping semiconductor layer 7 with Ohmic contact；Wherein, the first type electricity
Pole 31 and Second-Type electrode 71 cooperatively provide electric energy, and with llowing group of materials but can be not limited only to made by these materials：
Titanium, aluminum, gold, chromium, nickel, platinum and its alloy etc.；Its manufacture method is known to those skilled in the art, and and non-invention
Emphasis, therefore, is no longer repeated here in the present invention.
Furthermore, between substrate 1 and the first type doping semiconductor layer 3, configurable one by AlXGa1-xThe cushion 2 that N is constituted, its
In 0 ＜ x ＜ 1, not grow up on heterogeneous substrate 1 produced lattice paprmeter not as improving the first type doping semiconductor layer 3
The problem joined, and the material of cushion 2 also can be for example GaN, InGaN, SiC, ZnO etc..
The semiconductor light-emitting elements of above-described embodiment in actual implement to use when, because Second-Type doping semiconductor layer 7 is mixed
The miscellaneous magnesium having high concentration is (more than 5 × 1019cm-3), and it is to be formed to be less than 30nm under the relatively high pressure more than 300torr
Thickness, more traditional p-type gallium nitride layer is thin, and light extraction efficiency is obviously improved, and has preferably luminous efficiency, and it reasonably pushes away
By being that distance because between Second-Type electrode 71 and luminescent layer 5 surface is nearer, then photon and surface plasma produced by luminescent layer 5
Prisoner resonance produced by coupling ability stronger, luminous efficiency thus lifting；Wherein, surface plasma resonant phenomenon is Second-Type electricity
The phenomenon of the free electron collective motion on pole 71 surface；Furthermore, because Second-Type doping semiconductor layer 7 has relatively conventional p-type
The mg-doped of gallium nitride layer higher concentration, lead to its resistance value relatively low so that when electric current by Second-Type electrode 71 conduct to
During Second-Type doping semiconductor layer 7, reach effect that electric current uniformly spreads, so that light emitting diode can be obtained more preferably luminous
Efficiency.
In sum, the nitride semiconductor structure of the present invention and semiconductor light-emitting elements, can be taken off by above-mentioned really
The embodiment of dew, reaches desired use effect.
Above-mentioned disclosed accompanying drawing and explanation, only the preferred embodiments of the present invention, not for limiting the protection of the present invention
Scope；Persons skilled in the art, according to feature, the other equivalence changes done or the modification of the present invention, all should be regarded as not
Depart from protection scope of the present invention.
Claims (8)
1. a kind of nitride semiconductor structure, it includes one first type doping semiconductor layer and a Second-Type doped semiconductor
Layer, is configured with a luminescent layer in described first type doping semiconductor layer and described Second-Type doped semiconductor interlayer, wherein, described
Second-Type doping semiconductor layer is more than 5 × 10 doped with concentration19cm-3Second-Type admixture, and its thickness be less than 30nm；
Wherein, described luminescent layer and described Second-Type doped semiconductor interlayer are configured with an electric hole and provide layer, and described electricity hole provides
Layer is aluminum indium gallium nitride AlxInyGa1-x-yN, wherein 0<x<1,0<y<1,0<x+y<1, and described electricity hole provides layer doped with concentration
More than 1018cm-3Second-Type admixture；
Wherein, described electricity hole provides layer is 10 doped with concentration17-1020cm-3The 4th major element.
2. nitride semiconductor structure as claimed in claim 1, wherein, described luminescent layer has multiple quantum well construction, and
Described electricity hole provides the energy gap more than the well layer of described multiple quantum well construction for the energy gap of layer.
3. nitride semiconductor structure as claimed in claim 1, wherein, described luminescent layer has multiple quantum well construction, institute
State well layer and the barrier layer that multiple quantum well construction comprises multiple storehouses alternating with each other, and barrier interlayer described in every two-layer has one
Described well layer, described barrier layer is AlxInyGa1-x-yN, wherein x and y meet 0<x<1,0<y<1,0<x+y<1 numerical value, described
Well layer is InzGa1-zN, wherein 0<z<1.
4. nitride semiconductor structure as claimed in claim 3, wherein, described well layer has the thickness of 3.5nm-7nm.
5. nitride semiconductor structure as claimed in claim 3, wherein, described barrier layer is 10 doped with concentration16-1018cm-3The first type admixture.
6. nitride semiconductor structure as claimed in claim 1, wherein, described electricity hole provides layer and described Second-Type doping half
Conductor interlayer is configured with a Second-Type carrier barrier layer, and described Second-Type carrier barrier layer is AlxGa1-xN, wherein 0<x<1.
7. nitride semiconductor structure as claimed in claim 1, wherein, described luminescent layer and described first type doped semiconductor
Interlayer is configured with one first type carrier barrier layer, and described first type carrier barrier layer is AlxGa1-xN, wherein 0<x<1.
8. a kind of semiconductor light-emitting elements, it includes at least has：
One substrate；
One first type doping semiconductor layer, it is configured on described substrate；
One luminescent layer, it is configured on described first type doping semiconductor layer；
One Second-Type doping semiconductor layer, it is configured on described luminescent layer, and described Second-Type doping semiconductor layer is doped with dense
Degree is more than 5 × 1019cm-3Second-Type admixture, and its thickness be less than 30nm；
One first type electrode, it is configured on described first type doping semiconductor layer with Ohmic contact；And
One Second-Type electrode, it is configured on described Second-Type doping semiconductor layer with Ohmic contact；
Wherein, described luminescent layer and described Second-Type doped semiconductor interlayer are configured with an electric hole and provide layer, and described electricity hole provides
Layer is aluminum indium gallium nitride AlxInyGa1-x-yN, wherein 0<x<1,0<y<1,0<x+y<1, and described electricity hole provides layer doped with concentration
More than 1018cm-3Second-Type admixture；
Wherein, described electricity hole provides layer is 10 doped with concentration17-1020cm-3The 4th major element.
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| CN201310029679.2A CN103972341B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
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| JPH11251685A (en) * | 1998-03-05 | 1999-09-17 | Toshiba Corp | Semiconductor laser |
| ATE452999T1 (en) * | 2001-10-26 | 2010-01-15 | Ammono Sp Zoo | SUBSTRATE FOR EPITAXY |
| US6954478B2 (en) * | 2002-02-04 | 2005-10-11 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor laser device |
| JP4579654B2 (en) * | 2004-11-11 | 2010-11-10 | パナソニック株式会社 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD, AND LIGHTING MODULE AND LIGHTING DEVICE HAVING SEMICONDUCTOR LIGHT EMITTING DEVICE |
| KR100580752B1 (en) * | 2004-12-23 | 2006-05-15 | 엘지이노텍 주식회사 | Nitride semiconductor led and fabrication method thereof |
| US7462884B2 (en) * | 2005-10-31 | 2008-12-09 | Nichia Corporation | Nitride semiconductor device |
| US20110001126A1 (en) * | 2009-07-02 | 2011-01-06 | Sharp Kabushiki Kaisha | Nitride semiconductor chip, method of fabrication thereof, and semiconductor device |
| JP5635246B2 (en) * | 2009-07-15 | 2014-12-03 | 住友電気工業株式会社 | Group III nitride semiconductor optical device and epitaxial substrate |
| JP5533744B2 (en) * | 2010-03-31 | 2014-06-25 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device |
| CN102881784B (en) * | 2011-07-14 | 2016-02-03 | 比亚迪股份有限公司 | The p-type GaN/AlGaN structure that C δ adulterates, LED structure and preparation method |
| CN102569571B (en) * | 2012-03-06 | 2015-06-24 | 华灿光电股份有限公司 | Semiconductor light emitting diode and manufacturing method thereof |
| CN102738328B (en) * | 2012-07-02 | 2015-05-20 | 华灿光电股份有限公司 | Epitaxial wafer of light-emitting diode and manufacturing method thereof |
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