KR20100096328A - Nitride semiconductor light emitting device and method of manufacturing the same - Google Patents
Nitride semiconductor light emitting device and method of manufacturing the same Download PDFInfo
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- KR20100096328A KR20100096328A KR1020090015156A KR20090015156A KR20100096328A KR 20100096328 A KR20100096328 A KR 20100096328A KR 1020090015156 A KR1020090015156 A KR 1020090015156A KR 20090015156 A KR20090015156 A KR 20090015156A KR 20100096328 A KR20100096328 A KR 20100096328A
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- nitride semiconductor
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- light emitting
- type nitride
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Abstract
The present invention relates to a nitride semiconductor light emitting device and a manufacturing method thereof, comprising: an n-type nitride semiconductor layer formed on a substrate; An active layer formed on a portion of the n-type nitride semiconductor layer; A p-type nitride semiconductor layer formed on the active layer; A p-type electrode formed on the p-type nitride semiconductor layer; An n-type electrode formed on the n-type nitride semiconductor layer; And at least one groove formed to penetrate a portion of the p-type nitride semiconductor layer and an active layer in a portion where the p-type electrode is not formed. The present invention also provides a nitride semiconductor light emitting device comprising: It provides a manufacturing method.
Description
The present invention relates to a nitride semiconductor light emitting device and a method for manufacturing the same, and more particularly, to a nitride semiconductor light emitting device and a method for manufacturing the same to form a groove penetrating through the active layer to improve the light extraction efficiency.
Recently, III-V nitride semiconductors such as GaN have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their excellent physical and chemical properties. have. LEDs or LDs using III-V nitride semiconductor materials are widely used in light emitting devices for obtaining light in the blue or green wavelength band, and these light emitting devices are applied as light sources of various products such as home appliances, electronic displays, and lighting devices.
The nitride semiconductor light emitting device includes an active layer having a multi quantum well (MQW) structure disposed between n-type and p-type nitride semiconductor layers, and a principle of recombination of electrons and holes in the active layer. To generate and emit light.
Next, the nitride semiconductor light emitting device according to the related art will be described in detail with reference to FIG. 1.
1 is a cross-sectional view showing a nitride semiconductor light emitting device according to the prior art.
As shown in FIG. 1, the nitride semiconductor light emitting device according to the related art includes a
The n-type and p-type
The p-
Here, before forming the p-
When a current is applied to the light emitting device, a current flows between the p-
However, the conventional nitride semiconductor light emitting device has a low extraction efficiency of light exiting from the active layer, and thus, there is a continuous demand for new methods for maximizing the light extraction efficiency improvement effect of the nitride semiconductor light emitting device. .
Therefore, the present invention has been made to solve the above problems, an object of the present invention, by forming a groove penetrating through the active layer, the nitride semiconductor which can improve the light extraction efficiency of the device by increasing the effective area in which light is emitted The present invention provides a light emitting device and a method of manufacturing the same.
A nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object, an n-type nitride semiconductor layer formed on a substrate; An active layer formed on a portion of the n-type nitride semiconductor layer; A p-type nitride semiconductor layer formed on the active layer; A p-type electrode formed on the p-type nitride semiconductor layer; An n-type electrode formed on the n-type nitride semiconductor layer; And at least one groove formed to penetrate a portion of the p-type nitride semiconductor layer and an active layer in a portion where the p-type electrode is not formed.
Here, the transparent semiconductor device may further include a transparent electrode formed on the p-type nitride semiconductor layer and having a groove extending therein.
In addition, the transparent electrode may be made of indium tin oxide (ITO).
In addition, the groove may extend to a part or the bottom surface of the n-type nitride semiconductor layer.
In addition, the groove may have any one planar shape selected from the group consisting of a polygon, a circle, a line, and a combination thereof.
In addition, the groove may have a planar shape in which a plurality of line-shaped grooves are vertically intersected with each other.
In addition, a method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object comprises the steps of sequentially forming an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on a substrate; Mesa-etching a portion of the p-type nitride semiconductor layer and the active layer to expose a portion of the n-type nitride semiconductor layer; Forming a transparent electrode on the p-type nitride semiconductor layer; Removing at least one portion of the transparent electrode, the p-type nitride semiconductor layer, and the active layer to form at least one groove; And forming a p-type electrode and an n-type electrode on the transparent electrode and the exposed n-type nitride semiconductor layer, respectively.
Here, in the forming of the groove, the groove may be formed by an etching method.
In addition, in the forming of the groove, the groove may be formed to a part or the bottom surface of the n-type nitride semiconductor layer.
As described above, according to the nitride semiconductor light emitting device according to the present invention and a method of manufacturing the same, by forming a groove penetrating the active layer from the top of the device, the active layer of the active layer exposed by the groove together with the upper surface of the active layer Since the light can be further emitted from the side, there is an advantage that can increase the effective area in which the light is emitted.
Therefore, the present invention has the effect of improving the light extraction efficiency of the device to improve the light emitting characteristics of the device.
The matters relating to the operational effects including the technical constitution for the above object of the nitride semiconductor light emitting device and the manufacturing method according to the present invention will be clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.
Embodiment of Structure of Nitride Semiconductor Light Emitting Device
A nitride semiconductor light emitting device according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 5.
2 is a cross-sectional view illustrating a structure of a nitride semiconductor light emitting device according to an exemplary embodiment of the present invention, and FIGS. 3 to 5 are schematic plan views illustrating a shape of a groove according to an exemplary embodiment of the present invention.
As shown in FIG. 2, the nitride semiconductor light emitting device according to the embodiment of the present invention includes a buffer layer (not shown), an n-type
The
The buffer layer is a layer for improving lattice matching with the
The n-type
The
A portion of the p-type
The
The p-
In particular, in the nitride semiconductor light emitting device according to the embodiment of the present invention, at least one
The
In this case, the
Here, according to the present embodiment, as shown in FIG. 3, a plurality of
In this case, the planar shape of the
In addition, the planar shape of the
4 illustrates a case where two
However, the
As described above, the nitride semiconductor light emitting device according to the embodiment of the present invention in which the
Therefore, according to the embodiment of the present invention, the amount of light emitted from the
Embodiment of a method for manufacturing a nitride semiconductor light emitting device
Hereinafter, a method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention will be described in detail with reference to FIGS. 6A to 6E.
6A to 6E are cross-sectional views sequentially illustrating the method of manufacturing the nitride semiconductor light emitting device according to the embodiment of the present invention.
First, as shown in FIG. 6A, a
Then, a buffer layer (not shown), an n-type
Next, as shown in FIG. 6B, a portion of the n-type
Next, as illustrated in FIG. 6C, the
6D, portions of the
Here, the
Thereafter, as shown in FIG. 6E, the p-
According to the method of manufacturing the nitride semiconductor light emitting device according to the embodiment of the present invention as described above, by forming the
Preferred embodiments of the present invention described above are disclosed for the purpose of illustration, and various substitutions, modifications, and changes within the scope without departing from the spirit of the present invention for those skilled in the art to which the present invention pertains. It will be possible, but such substitutions, changes and the like should be regarded as belonging to the following claims.
1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to the prior art.
2 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to an embodiment of the present invention.
3 to 5 is a plan view schematically showing the shape of the groove according to the embodiment of the present invention.
6A through 6E are cross-sectional views sequentially illustrating the method of manufacturing the nitride semiconductor light emitting device according to the embodiment of the present invention.
<Description of Symbols for Main Parts of Drawings>
200: substrate 210: n-type nitride semiconductor layer
220: active layer 230: p-type nitride semiconductor layer
240: transparent electrode 250: p-type electrode
260: n-type electrode 300: groove
Claims (9)
Priority Applications (1)
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KR1020090015156A KR20100096328A (en) | 2009-02-24 | 2009-02-24 | Nitride semiconductor light emitting device and method of manufacturing the same |
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KR1020090015156A KR20100096328A (en) | 2009-02-24 | 2009-02-24 | Nitride semiconductor light emitting device and method of manufacturing the same |
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KR20100096328A true KR20100096328A (en) | 2010-09-02 |
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2009
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