KR20100096328A - Nitride semiconductor light emitting device and method of manufacturing the same - Google Patents

Nitride semiconductor light emitting device and method of manufacturing the same Download PDF

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Publication number
KR20100096328A
KR20100096328A KR1020090015156A KR20090015156A KR20100096328A KR 20100096328 A KR20100096328 A KR 20100096328A KR 1020090015156 A KR1020090015156 A KR 1020090015156A KR 20090015156 A KR20090015156 A KR 20090015156A KR 20100096328 A KR20100096328 A KR 20100096328A
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South Korea
Prior art keywords
nitride semiconductor
semiconductor layer
type
light emitting
type nitride
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KR1020090015156A
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Korean (ko)
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정일권
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삼성엘이디 주식회사
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Priority to KR1020090015156A priority Critical patent/KR20100096328A/en
Publication of KR20100096328A publication Critical patent/KR20100096328A/en

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Abstract

The present invention relates to a nitride semiconductor light emitting device and a manufacturing method thereof, comprising: an n-type nitride semiconductor layer formed on a substrate; An active layer formed on a portion of the n-type nitride semiconductor layer; A p-type nitride semiconductor layer formed on the active layer; A p-type electrode formed on the p-type nitride semiconductor layer; An n-type electrode formed on the n-type nitride semiconductor layer; And at least one groove formed to penetrate a portion of the p-type nitride semiconductor layer and an active layer in a portion where the p-type electrode is not formed. The present invention also provides a nitride semiconductor light emitting device comprising: It provides a manufacturing method.

Description

Nitride semiconductor light emitting device and method of manufacturing the same

The present invention relates to a nitride semiconductor light emitting device and a method for manufacturing the same, and more particularly, to a nitride semiconductor light emitting device and a method for manufacturing the same to form a groove penetrating through the active layer to improve the light extraction efficiency.

Recently, III-V nitride semiconductors such as GaN have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their excellent physical and chemical properties. have. LEDs or LDs using III-V nitride semiconductor materials are widely used in light emitting devices for obtaining light in the blue or green wavelength band, and these light emitting devices are applied as light sources of various products such as home appliances, electronic displays, and lighting devices.

The nitride semiconductor light emitting device includes an active layer having a multi quantum well (MQW) structure disposed between n-type and p-type nitride semiconductor layers, and a principle of recombination of electrons and holes in the active layer. To generate and emit light.

Next, the nitride semiconductor light emitting device according to the related art will be described in detail with reference to FIG. 1.

1 is a cross-sectional view showing a nitride semiconductor light emitting device according to the prior art.

As shown in FIG. 1, the nitride semiconductor light emitting device according to the related art includes a sapphire substrate 100 for growing a GaN-based semiconductor material, and an n-type nitride semiconductor layer sequentially formed on the sapphire substrate 100 ( 110, an active layer 120, and a p-type nitride semiconductor layer 130, wherein a portion of the p-type nitride semiconductor layer 130 and the active layer 120 is removed by a mesa etching process. A bar has a structure in which a portion of the n-type nitride semiconductor layer 110 is exposed.

The n-type and p-type nitride semiconductor layers 110 and 130 and the active layer 120 have an In X Al Y Ga 1-XY N composition formula (where 0 ≦ X, 0 ≦ Y, and X + Y ≦ 1). It may be a semiconductor material having. More specifically, the n-type nitride semiconductor layer 110 may be formed of a GaN layer or a GaN / AlGaN layer doped with n-type conductive impurities, the p-type nitride semiconductor layer 130 is a p-type conductive impurity This doped GaN layer or GaN / AlGaN layer and the like. The active layer 120 may be formed of a GaN / InGaN layer having a multi quantum well structure.

The p-type electrode 150 is formed on the p-type nitride semiconductor layer 130 not etched by the mesa etching process, and the n-type electrode (on the n-type nitride semiconductor layer 110 exposed through the etching process). 160 is formed. The p-type and n-type electrodes 150 and 160 may be made of a metal material such as Au or Cr / Au.

Here, before forming the p-type electrode 150 on the upper surface of the p-type nitride semiconductor layer 130, a transparent electrode 140 is formed to form an ohmic contact while increasing the current injection area. Can be. The transparent electrode 140 may be mainly made of ITO or the like.

When a current is applied to the light emitting device, a current flows between the p-type electrode 150 and the n-type electrode 160 and light emission occurs in the active layer 120.

However, the conventional nitride semiconductor light emitting device has a low extraction efficiency of light exiting from the active layer, and thus, there is a continuous demand for new methods for maximizing the light extraction efficiency improvement effect of the nitride semiconductor light emitting device. .

Therefore, the present invention has been made to solve the above problems, an object of the present invention, by forming a groove penetrating through the active layer, the nitride semiconductor which can improve the light extraction efficiency of the device by increasing the effective area in which light is emitted The present invention provides a light emitting device and a method of manufacturing the same.

A nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object, an n-type nitride semiconductor layer formed on a substrate; An active layer formed on a portion of the n-type nitride semiconductor layer; A p-type nitride semiconductor layer formed on the active layer; A p-type electrode formed on the p-type nitride semiconductor layer; An n-type electrode formed on the n-type nitride semiconductor layer; And at least one groove formed to penetrate a portion of the p-type nitride semiconductor layer and an active layer in a portion where the p-type electrode is not formed.

Here, the transparent semiconductor device may further include a transparent electrode formed on the p-type nitride semiconductor layer and having a groove extending therein.

In addition, the transparent electrode may be made of indium tin oxide (ITO).

In addition, the groove may extend to a part or the bottom surface of the n-type nitride semiconductor layer.

In addition, the groove may have any one planar shape selected from the group consisting of a polygon, a circle, a line, and a combination thereof.

In addition, the groove may have a planar shape in which a plurality of line-shaped grooves are vertically intersected with each other.

In addition, a method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object comprises the steps of sequentially forming an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on a substrate; Mesa-etching a portion of the p-type nitride semiconductor layer and the active layer to expose a portion of the n-type nitride semiconductor layer; Forming a transparent electrode on the p-type nitride semiconductor layer; Removing at least one portion of the transparent electrode, the p-type nitride semiconductor layer, and the active layer to form at least one groove; And forming a p-type electrode and an n-type electrode on the transparent electrode and the exposed n-type nitride semiconductor layer, respectively.

Here, in the forming of the groove, the groove may be formed by an etching method.

In addition, in the forming of the groove, the groove may be formed to a part or the bottom surface of the n-type nitride semiconductor layer.

As described above, according to the nitride semiconductor light emitting device according to the present invention and a method of manufacturing the same, by forming a groove penetrating the active layer from the top of the device, the active layer of the active layer exposed by the groove together with the upper surface of the active layer Since the light can be further emitted from the side, there is an advantage that can increase the effective area in which the light is emitted.

Therefore, the present invention has the effect of improving the light extraction efficiency of the device to improve the light emitting characteristics of the device.

The matters relating to the operational effects including the technical constitution for the above object of the nitride semiconductor light emitting device and the manufacturing method according to the present invention will be clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

Embodiment of Structure of Nitride Semiconductor Light Emitting Device

A nitride semiconductor light emitting device according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 5.

2 is a cross-sectional view illustrating a structure of a nitride semiconductor light emitting device according to an exemplary embodiment of the present invention, and FIGS. 3 to 5 are schematic plan views illustrating a shape of a groove according to an exemplary embodiment of the present invention.

As shown in FIG. 2, the nitride semiconductor light emitting device according to the embodiment of the present invention includes a buffer layer (not shown), an n-type nitride semiconductor layer 210, an active layer 220, and a p-type nitride on a substrate 200. The semiconductor layers 230 are sequentially stacked.

The substrate 200 is preferably made of a transparent material such as sapphire, and in addition to sapphire, zinc oxide (ZnO), gallium nitride (GaN), silicon carbide (SiC) or aluminum nitride (AlN) or the like.

The buffer layer is a layer for improving lattice matching with the substrate 200 before the n-type nitride semiconductor layer 210 is grown on the substrate 200, and may be formed of GaN or the like, which may be a process condition and a device. It can be omitted depending on the characteristics.

The n-type nitride semiconductor layer 210, the active layer 220, and the p-type nitride semiconductor layer 230 may have an In X Al Y Ga 1-XY N composition formula (where 0 ≦ X, 0 ≦ Y, and X + Y ≦ It can be made of a semiconductor material having 1). More specifically, the n-type nitride semiconductor layer 210 may be formed of a GaN layer or a GaN / AlGaN layer doped with n-type conductive impurities, for example, Si, Ge, Sn is used, and preferably Si is mainly used. In addition, the p-type nitride semiconductor layer 230 may be formed of a GaN layer or a GaN / AlGaN layer doped with a p-type conductivity, such as, for example, Mg, Zn, Be, etc. Is used, and preferably Mg is mainly used.

The active layer 220 may be formed of an InGaN / GaN layer having a multi-quantum well structure.

A portion of the p-type nitride semiconductor layer 230 and the active layer 220 are removed by mesa etching to expose a portion of the n-type nitride semiconductor layer 210.

The transparent electrode 240 is formed on the p-type nitride semiconductor layer 230 not removed by the mesa etching. The transparent electrode 240 is for improving the current diffusion effect, and may be mainly made of indium tin oxide (ITO) or the like.

The p-type electrode 250 is formed on the transparent electrode 240, and the n-type electrode 260 is formed on the n-type nitride semiconductor layer 210 exposed by the mesa etching. The p-type electrode and the n-type electrode 250 and 260 may be formed of Au, Cr / Au, or the like so as to simultaneously perform a reflection role and an electrode role.

In particular, in the nitride semiconductor light emitting device according to the embodiment of the present invention, at least one groove 300 for improving light extraction efficiency of the light emitting device is formed in a portion where the p-type electrode 250 is not formed. have.

The groove 300 is formed to penetrate a portion of the transparent electrode 240, the p-type nitride semiconductor layer 230, and the active layer 220 by an etching method or the like.

In this case, the groove 300 penetrating the active layer 220 may extend to a part or the bottom surface of the n-type nitride semiconductor layer 210 under the active layer 220.

Here, according to the present embodiment, as shown in FIG. 3, a plurality of grooves 300 having a rectangular planar shape may be spaced apart from each other.

In this case, the planar shape of the groove 300 is not limited to the quadrangle as described above, within the technical scope of the present invention, for example, a polygon such as a triangle, a circle, a line type and a combination thereof. It may be variously modified, including any one selected from the group consisting of.

In addition, the planar shape of the groove 300, as shown in Figures 4 and 5, in addition to the shape as described above, a plurality of line-shaped grooves (line) grooves (300) are arranged perpendicular to each other, etc. It can be variously modified, including.

4 illustrates a case where two linear grooves 300 are vertically intersected with each other, and FIG. 5 illustrates a case where three or more linear grooves 300 are vertically intersected with each other.

However, the groove 300 may be formed at a position where the p-type electrode 250 is not formed in consideration of the formation position of the p-type electrode 250.

As described above, the nitride semiconductor light emitting device according to the embodiment of the present invention in which the grooves 300 penetrating through the active layer 220 are formed. In contrast, light is emitted only through the upper surface of the active layer 120. Since light is further emitted from the top surface of the active layer 220 as well as from the side of the active layer 220 exposed by the groove 300, an area of the active layer 220 that is emitted, that is, an effective light emitting area may be increased. There is an advantage.

Therefore, according to the embodiment of the present invention, the amount of light emitted from the active layer 220 can be increased, thereby improving the light extraction efficiency of the device has the effect of improving the light emission characteristics.

Embodiment of a method for manufacturing a nitride semiconductor light emitting device

Hereinafter, a method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention will be described in detail with reference to FIGS. 6A to 6E.

6A to 6E are cross-sectional views sequentially illustrating the method of manufacturing the nitride semiconductor light emitting device according to the embodiment of the present invention.

First, as shown in FIG. 6A, a substrate 200 for growing a nitride semiconductor material is prepared. The substrate 200 is preferably made of sapphire, and may be made of ZnO, GaN, SiC or AlN in addition to sapphire.

Then, a buffer layer (not shown), an n-type nitride semiconductor layer 210, an active layer 220, and a p-type nitride semiconductor layer 230 are sequentially formed on the substrate 200. Here, the formation of the buffer layer may be omitted.

Next, as shown in FIG. 6B, a portion of the n-type nitride semiconductor layer 210 is exposed by mesa etching a portion of the p-type nitride semiconductor layer 230 and the active layer 220.

Next, as illustrated in FIG. 6C, the transparent electrode 240 is formed on the p-type nitride semiconductor layer 230 not etched by the mesa etching process to improve the current diffusion effect. The transparent electrode 240 may be made of ITO or the like.

6D, portions of the transparent electrode 240, the p-type nitride semiconductor layer 230, and the active layer 220 are removed to form one or more grooves 300.

Here, the groove 300 may be formed by an etching method or the like, and may be formed by etching part or the bottom of the n-type nitride semiconductor layer 210 under the active layer 220 according to etching process conditions. Can be.

Thereafter, as shown in FIG. 6E, the p-type electrode 250 is formed on the transparent electrode 240 where the groove 300 is not formed, and the n-type nitride semiconductor layer exposed by the mesa etching process is formed. An n-type electrode 260 is formed on the 210.

According to the method of manufacturing the nitride semiconductor light emitting device according to the embodiment of the present invention as described above, by forming the groove 300 penetrating the active layer 220, the light from the upper surface as well as the side of the active layer 220 By emitting light, there is an effect of improving the light extraction efficiency of the light emitting device.

Preferred embodiments of the present invention described above are disclosed for the purpose of illustration, and various substitutions, modifications, and changes within the scope without departing from the spirit of the present invention for those skilled in the art to which the present invention pertains. It will be possible, but such substitutions, changes and the like should be regarded as belonging to the following claims.

1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to the prior art.

2 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to an embodiment of the present invention.

3 to 5 is a plan view schematically showing the shape of the groove according to the embodiment of the present invention.

6A through 6E are cross-sectional views sequentially illustrating the method of manufacturing the nitride semiconductor light emitting device according to the embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

200: substrate 210: n-type nitride semiconductor layer

220: active layer 230: p-type nitride semiconductor layer

240: transparent electrode 250: p-type electrode

260: n-type electrode 300: groove

Claims (9)

An n-type nitride semiconductor layer formed on the substrate; An active layer formed on a portion of the n-type nitride semiconductor layer; A p-type nitride semiconductor layer formed on the active layer; A p-type electrode formed on the p-type nitride semiconductor layer; An n-type electrode formed on the n-type nitride semiconductor layer; And At least one groove formed to penetrate a portion of the p-type nitride semiconductor layer and an active layer in a portion where the p-type electrode is not formed; Nitride semiconductor light emitting device comprising a. The method of claim 1, And a transparent electrode formed on the p-type nitride semiconductor layer and having a groove extending therein. The method of claim 2, The transparent electrode is a nitride semiconductor light emitting device made of indium tin oxide (ITO). The method of claim 1, The groove is formed in the nitride semiconductor light emitting device extending to a portion or the lower surface of the n-type nitride semiconductor layer. The method of claim 1, The groove has a nitride semiconductor light emitting device having any one planar shape selected from the group consisting of polygon, circle, line and combinations thereof. The method of claim 1, The groove is a nitride semiconductor light emitting device having a planar shape in which a plurality of linear grooves are arranged perpendicular to each other. Sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate; Mesa-etching a portion of the p-type nitride semiconductor layer and the active layer to expose a portion of the n-type nitride semiconductor layer; Forming a transparent electrode on the p-type nitride semiconductor layer; Removing at least one portion of the transparent electrode, the p-type nitride semiconductor layer, and the active layer to form at least one groove; And Forming a p-type electrode and an n-type electrode on the transparent electrode and the exposed n-type nitride semiconductor layer, respectively; Method of manufacturing a nitride semiconductor light emitting device comprising a. The method of claim 7, wherein In the step of forming the groove, The groove is formed by the etching method of the nitride semiconductor light emitting device. The method of claim 7, wherein In the step of forming the groove, The groove is formed in the nitride semiconductor light emitting device to form a portion or the lower surface of the n-type nitride semiconductor layer.
KR1020090015156A 2009-02-24 2009-02-24 Nitride semiconductor light emitting device and method of manufacturing the same KR20100096328A (en)

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