CN106129199A - Reduce the LED epitaxial growth method of contact resistance - Google Patents
Reduce the LED epitaxial growth method of contact resistance Download PDFInfo
- Publication number
- CN106129199A CN106129199A CN201610837668.0A CN201610837668A CN106129199A CN 106129199 A CN106129199 A CN 106129199A CN 201610837668 A CN201610837668 A CN 201610837668A CN 106129199 A CN106129199 A CN 106129199A
- Authority
- CN
- China
- Prior art keywords
- growth
- layer
- doping
- passed
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000012010 growth Effects 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 49
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 230000009467 reduction Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 36
- 239000011777 magnesium Substances 0.000 description 25
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 11
- 230000006870 function Effects 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000003712 anti-aging effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
This application discloses a kind of LED epitaxial growth method reducing contact resistance, include successively: process substrate, low temperature growth buffer layer GaN, growth undope GaN layer, growth doping Si N-type GaN layer, growth luminescent layer, growing P-type AlGaN layer, growth doping Mg p-type GaN layer, growth SiInGaN/SiGaN superlattice layer, cooling down.So scheme, after the p-type GaN layer of growth growth doping Mg, introduce the step of growth SiInGaN/SiGaN superlattice layer, using SiInGaN/SiGaN superlattice layer as contact layer, it is to say, insert the SiInGaN/SiGaN superlattice layer that one layer of work function is the least between PGaN layer and ITO, effectively reduce contact resistance, reduce the driving voltage of LED, improve the light efficiency quality of LED.
Description
Technical field
The application relates to LED epitaxial scheme applied technical field, specifically, relates to a kind of LED reducing contact resistance
Epitaxial growth method.
Background technology
LED (Light Emitting Diode, light emitting diode) is a kind of solid state lighting at present, and volume is little, power consumption
Low service life long high brightness, environmental protection, the advantage such as sturdy and durable approved by consumers in general, the scale of domestic production LED is also
Progressively expanding；On market, the demand to LED luminance and light efficiency grows with each passing day, and client is concerned with LED more power saving, and brightness is more
Height, light efficiency are more preferable, and this just has higher requirement for LED epitaxial growth；How to grow more preferable epitaxial wafer and be increasingly subject to weight
Depending on, because the raising of epitaxial layer crystal mass, the performance of LED component can get a promotion, the luminous efficiency of LED, the life-span, anti-ageing
Change ability, antistatic effect, stability can promote along with the lifting of epitaxial layer crystal mass.
Therefore, high power device driving voltage and brightness requirement are the emphasis of existing market demand.But traditional LED extension
In growing method, P layer and ITO contact resistance are very big, and both contact work functions are very big, and this have impact on LED's to a certain extent
Light efficiency quality.
Summary of the invention
In view of this, technical problems to be solved in this application there is provided a kind of LED extension life reducing contact resistance
Long method, inserts the SiInGaN/SiGaN superlattice layer that one layer of work function is the least between PGaN layer and ITO, effectively drops
Low contact resistance, reduces the driving voltage of LED, improves the light efficiency quality of LED.
In order to solve above-mentioned technical problem, the application has a following technical scheme:
A kind of LED epitaxial growth method reducing contact resistance, it is characterised in that include successively: process substrate, grow low
Temperature cushion GaN, growth undope GaN layer, growth doping Si N-type GaN layer, growth luminescent layer, growing P-type AlGaN layer, life
Long doping the p-type GaN layer of Mg, cooling down,
After the p-type GaN layer of described growth doping Mg, also include: growth SiInGaN/SiGaN superlattice layer,
Described growth SiInGaN/SiGaN superlattice layer is:
Keeping reaction chamber pressure 300mbar-600mbar, keep temperature 750 DEG C-850 DEG C, being passed through flow is 10sccm-
The N of TMGa, 100L/min-130L/min of 20sccm2, the SiH of 5sccm-10sccm4, the TMIn of 1000sccm-2000sccm,
Growth SiInGaN/SiGaN superlattice layer,
Described growth SiInGaN/SiGaN superlattice layer, particularly as follows:
Keeping reaction chamber pressure 300mbar-600mbar, keep temperature 750 DEG C-850 DEG C, being passed through flow is 10sccm-
The N of TMGa, 100L/min-130L/min of 20sccm2, the SiH of 5sccm-10sccm4, the TMIn of 1000sccm-2000sccm,
Growth thickness is the SiInGaN layer of 1nm-2nm, and wherein Si doping content is 1E18atoms/cm3-5E18atoms/cm3, In mixes
Miscellaneous concentration is 1E19atoms/cm3-5E19atoms/cm3；
Keeping reaction chamber pressure 300mbar-600mbar, keep temperature 750 DEG C-850 DEG C, being passed through flow is 10sccm-
The N of TMGa, 100L/min-130L/min of 20sccm2, the SiH of 5sccm-10sccm4, growth thickness is the SiGaN of 1nm-2nm
Layer, wherein, Si doping content is 1E18atoms/cm3-5E18atoms/cm3；
SiInGaN layer described in cyclical growth and described SiGaN layer, growth cycle is 2-4,
The order growing described SiInGaN layer and the described SiGaN layer of growth is interchangeable.
Preferably, wherein:
Described process substrate, particularly as follows: at the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through 100L/min-130L/min's
H2, keep reaction chamber pressure 100mbar-300mbar, process Sapphire Substrate 8min-10min.
Preferably, wherein:
Described low temperature growth buffer layer, particularly as follows:
Reduction temperature, to 500 DEG C-600 DEG C, keeps reaction chamber pressure 300mbar-600mbar, and being passed through flow is
10000sccm-20000sccm NH3, the H of TMGa, 100L/min-130L/min of 50sccm-100sccm2, serve as a contrast at sapphire
, growth thickness is the low temperature buffer layer GaN of 20nm-40nm at the end.
Preferably, wherein:
Described growth undopes GaN layer, particularly as follows:
Increasing the temperature to 1000 DEG C-1200 DEG C, keep reaction chamber pressure 300mbar-600mbar, being passed through flow is
The NH of 30000sccm-40000sccm3, the H of TMGa, 100L/min-130L/min of 200sccm-400sccm2, continued propagation 2
The GaN layer that undopes of μm-4 μm.
Preferably, wherein:
The N-type GaN layer of described growth doping Si, particularly as follows:
Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 20sccm-50sccm4, continued propagation 3 μm-4 μm doping Si
N-type GaN, Si doping content 5E18atoms/cm3-1E19atoms/cm3；
Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 2sccm-10sccm4, continued propagation 200nm-400nm adulterates
N-type GaN of Si, Si doping content 5E17atoms/cm3-1E18atoms/cm3。
Preferably, wherein:
Described growth luminescent layer, particularly as follows:
Keeping reaction chamber pressure 300mbar-400mbar, temperature 700 DEG C-750 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, TMIn, 100L/min-130L/min of TMGa, 1500sccm-2000sccm of 20sccm-40sccm
N2, the In that thickness is 2.5nm-3.5nm of growth doping InxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-
455nm；
Then liter high-temperature is to 750 DEG C-850 DEG C, keeps reaction chamber pressure 300mbar-400mbar, and being passed through flow is
The NH of 50000sccm-70000sccm3, the N of TMGa, 100L/min-130L/min of 20sccm-100sccm2, grow 8nm-
The GaN layer of 15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, control
Periodicity processed is 7-15.
Preferably, wherein:
Described growing P-type AlGaN layer, particularly as follows:
Keeping reaction chamber pressure 200mbar-400mbar, temperature 900 DEG C-950 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 30sccm-60sccm2, 100sccm-130sccm
The Cp of TMAl, 1000sccm-1300sccm2The p-type AlGaN layer of Mg, continued propagation 50nm-100nm, Al doping content
1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
Preferably, wherein:
The p-type GaN layer of described growth doping Mg, particularly as follows:
Keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 20sccm-100sccm2, 1000sccm-3000sccm
Cp2The p-type GaN layer mixing Mg of Mg, continued propagation 50nm-100nm, Mg doping content 1E19atoms/cm3-1E20atoms/
cm3。
Preferably, wherein:
Described cooling down, particularly as follows:
It is cooled to 650 DEG C-680 DEG C, is incubated 20min-30min, be then switched off heating system, close to gas system, with stove
Cooling.
Compared with prior art, method described herein, reach following effect:
The present invention reduces the LED epitaxial growth method of contact resistance, compared with traditional method, growth growth doping Mg's
After p-type GaN layer, introduce growth SiInGaN/SiGaN superlattice layer step, using SiInGaN/SiGaN superlattice layer as
Contact layer.SiInGaN/SiGaN superlattice layer is as contact layer, and it contacts work function than pGaN and ITO in traditional method with ITO
Contact work function is compared much lower, thus SiInGaN/SiGaN superlattice layer effectively reduces pGaN epitaxial layer and ITO's
Contact resistance, significantly reduces driving voltage, so that the luminous efficiency of LED is effectively improved.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing further understanding of the present application, constitutes the part of the application, this Shen
Schematic description and description please is used for explaining the application, is not intended that the improper restriction to the application.In the accompanying drawings:
Fig. 1 is the flow chart that the present invention reduces the LED epitaxial growth method of contact resistance；
Fig. 2 is the structural representation of LED epitaxial layer in the present invention；
Fig. 3 is the structural representation of LED epitaxial layer in comparative example；
Wherein, 1, substrate, 2, low temperature buffer layer GaN, 3, U-shaped GaN layer, 4, N-type GaN layer, 5, luminescent layer, 5.1,
InxGa(1-x)N shell, 5.2, GaN layer, 6, p-type AlGaN layer, 7, p-type GaN layer, 8, contact layer, 8.1, SiInGaN, 8.2, SiGaN,
9, ITO, 10, SiO2, 11, P electrode P pad, 12, N electrode N pad.
Detailed description of the invention
As employed some vocabulary in the middle of description and claim to censure specific components.Those skilled in the art should
It is understood that hardware manufacturer may call same assembly with different nouns.This specification and claims are not with name
The difference claimed is used as distinguishing the mode of assembly, but is used as the criterion distinguished with assembly difference functionally.As logical
" comprising " mentioned in the middle of piece description and claim is an open language, therefore should be construed to " comprise but do not limit
In "." substantially " referring in receivable range of error, those skilled in the art can solve described in the range of certain error
Technical problem, basically reaches described technique effect.Additionally, " coupling " word comprises any directly and indirectly electric property coupling at this
Means.Therefore, if a first device is coupled to one second device described in literary composition, then representing described first device can direct electrical coupling
It is connected to described second device, or is indirectly electrically coupled to described second device by other devices or the means that couple.Description
Subsequent descriptions is to implement the better embodiment of the application, for the purpose of right described description is the rule so that the application to be described,
It is not limited to scope of the present application.The protection domain of the application is when being as the criterion depending on the defined person of claims.
Embodiment 1
The present invention uses long high brightness GaN-based LED in MOCVD next life.Use high-purity H2Or high-purity N2Or high-purity H2With
High-purity N2Mixed gas as carrier gas, high-purity N H3As N source, metal organic source trimethyl gallium (TMGa) is as gallium source, front three
Base indium (TMIn) is as indium source, and N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is as aluminum source, and P-type dopant is two
Cyclopentadienyl magnesium (CP2Mg), substrate is (001) surface sapphire, and reaction pressure is between 70mbar to 900mbar.Concrete growth pattern is such as
Under:
A kind of LED epitaxial growth method reducing contact resistance, sees Fig. 1, includes successively: process substrate, growing low temperature
Cushion GaN, growth undope GaN layer, growth doping Si N-type GaN layer, growth luminescent layer, growing P-type AlGaN layer, growth
Doping the p-type GaN layer of Mg, cooling down,
After the p-type GaN layer of described growth doping Mg, also include: growth SiInGaN/SiGaN superlattice layer,
Described growth SiInGaN/SiGaN superlattice layer is:
Keeping reaction chamber pressure 300mbar-600mbar, keep temperature 750 DEG C-850 DEG C, being passed through flow is 10sccm-
The N of TMGa, 100L/min-130L/min of 20sccm2, the SiH of 5sccm-10sccm4, the TMIn of 1000sccm-2000sccm,
Growth SiInGaN/SiGaN superlattice layer,
Described growth SiInGaN/SiGaN superlattice layer, particularly as follows:
Keeping reaction chamber pressure 300mbar-600mbar, keep temperature 750 DEG C-850 DEG C, being passed through flow is 10sccm-
The N of TMGa, 100L/min-130L/min of 20sccm2, the SiH of 5sccm-10sccm4, the TMIn of 1000sccm-2000sccm,
Growth thickness is the SiInGaN layer of 1nm-2nm, and wherein Si doping content is 1E18atoms/cm3-5E18atoms/cm3, In mixes
Miscellaneous concentration is 1E19atoms/cm3-5E19atoms/cm3；
Keeping reaction chamber pressure 300mbar-600mbar, keep temperature 750 DEG C-850 DEG C, being passed through flow is 10sccm-
The N of TMGa, 100L/min-130L/min of 20sccm2, the SiH of 5sccm-10sccm4, growth thickness is the SiGaN of 1nm-2nm
Layer, wherein, Si doping content is 1E18atoms/cm3-5E18atoms/cm3；
SiInGaN layer described in cyclical growth and described SiGaN layer, growth cycle is 2-4,
The order growing described SiInGaN layer and the described SiGaN layer of growth is interchangeable.
The present invention reduces the LED epitaxial growth method of contact resistance, compared with traditional method, growth growth doping Mg's
After p-type GaN layer, introduce growth SiInGaN/SiGaN superlattice layer step, using SiInGaN/SiGaN superlattice layer as
Contact layer.SiInGaN/SiGaN superlattice layer is as contact layer, and it contacts work function than pGaN and ITO in traditional method with ITO
Contact work function is compared much lower, thus SiInGaN/SiGaN superlattice layer effectively reduces pGaN epitaxial layer and ITO's
Contact resistance, significantly reduces driving voltage, so that the luminous efficiency of LED is effectively improved.
Embodiment 2
The Application Example of the LED epitaxial growth method reducing contact resistance of the present invention presented below, its epitaxial structure
Seeing Fig. 2, growing method sees Fig. 1.Use long high brightness GaN-based LED in MOCVD next life.Use high-purity H2Or high-purity N2
Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As N source, metal organic source trimethyl gallium (TMGa) conduct
Gallium source, trimethyl indium (TMIn) is as indium source, and N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is as aluminum source, p-type
Adulterant is two cyclopentadienyl magnesium (CP2Mg), substrate is (0001) surface sapphire, and reaction pressure is between 70mbar to 900mbar.Specifically
Growth pattern is as follows:
Step 101, process substrate:
At the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through the H of 100L/min-130L/min2, keep reaction chamber pressure
100mbar-300mbar, processes Sapphire Substrate 8min-10min.
Step 102, low temperature growth buffer layer:
Reduction temperature, to 500 DEG C-600 DEG C, keeps reaction chamber pressure 300mbar-600mbar, and being passed through flow is
10000sccm-20000sccm NH3, the H of TMGa, 100L/min-130L/min of 50sccm-100sccm2, serve as a contrast at sapphire
, growth thickness is the low temperature buffer layer GaN of 20nm-40nm at the end.
Step 103, growth undope GaN layer:
Increasing the temperature to 1000 DEG C-1200 DEG C, keep reaction chamber pressure 300mbar-600mbar, being passed through flow is
The NH of 30000sccm-40000sccm3, the H of TMGa, 100L/min-130L/min of 200sccm-400sccm2, continued propagation 2
The GaN layer that undopes of μm-4 μm.
Step 104, the N-type GaN layer of growth doping Si:
Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 20sccm-50sccm4, continued propagation 3 μm-4 μm doping Si
N-type GaN, Si doping content 5E18atoms/cm3-1E19atoms/cm3；
Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 2sccm-10sccm4, continued propagation 200nm-400nm adulterates
N-type GaN of Si, Si doping content 5E17atoms/cm3-1E18atoms/cm3。
In the application, 1E18 represents 18 powers i.e. the 1*10 of 1018, by that analogy, atoms/cm3For doping content list
Position, lower same.
Step 105, growth luminescent layer:
Keeping reaction chamber pressure 300mbar-400mbar, temperature 700 DEG C-750 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, TMIn, 100L/min-130L/min of TMGa, 1500sccm-2000sccm of 20sccm-40sccm
N2, the In that thickness is 2.5nm-3.5nm of growth doping InxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-
455nm；
Then liter high-temperature is to 750 DEG C-850 DEG C, keeps reaction chamber pressure 300mbar-400mbar, and being passed through flow is
The NH of 50000sccm-70000sccm3, the N of TMGa, 100L/min-130L/min of 20sccm-100sccm2, grow 8nm-
The GaN layer of 15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, control
Periodicity processed is 7-15.
Step 106, growing P-type AlGaN layer:
Keeping reaction chamber pressure 200mbar-400mbar, temperature 900 DEG C-950 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 30sccm-60sccm2, 100sccm-130sccm
The Cp of TMAl, 1000sccm-1300sccm2The p-type AlGaN layer of Mg, continued propagation 50nm-100nm, Al doping content
1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
Step 107, the p-type GaN layer of growth doping Mg:
Keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 20sccm-100sccm2, 1000sccm-3000sccm
Cp2The p-type GaN layer mixing Mg of Mg, continued propagation 50nm-100nm, Mg doping content 1E19atoms/cm3-1E20atoms/
cm3。
Step 108, growth SiInGaN/SiGaN superlattice layer:
Keeping reaction chamber pressure 300mbar-600mbar, keep temperature 750 DEG C-850 DEG C, being passed through flow is 10sccm-
The N of TMGa, 100L/min-130L/min of 20sccm2, the SiH of 5sccm-10sccm4, the TMIn of 1000sccm-2000sccm,
Growth thickness is the SiInGaN layer of 1nm-2nm, and wherein Si doping content is 1E18atoms/cm3-5E18atoms/cm3, In mixes
Miscellaneous concentration is 1E19atoms/cm3-5E19atoms/cm3；
Keeping reaction chamber pressure 300mbar-600mbar, keep temperature 750 DEG C-850 DEG C, being passed through flow is 10sccm-
The N of TMGa, 100L/min-130L/min of 20sccm2, the SiH of 5sccm-10sccm4, growth thickness is the SiGaN of 1nm-2nm
Layer, wherein, Si doping content is 1E18atoms/cm3-5E18atoms/cm3；
SiInGaN layer described in cyclical growth and described SiGaN layer, growth cycle is 2-4,
The order growing described SiInGaN layer and the described SiGaN layer of growth is interchangeable.
Step 109, cooling down:
It is cooled to 650 DEG C-680 DEG C, is incubated 20min-30min, be then switched off heating system, close to gas system, with stove
Cooling.
Embodiment 3
A kind of conventional LED epitaxial growth method presented below is as the comparative example of the present invention.
The growing method of conventional LED extension is (epitaxial layer structure sees Fig. 3):
1, at the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through the H of 100L/min-130L/min2, keep reaction chamber pressure
100mbar-300mbar, processes Sapphire Substrate 8min-10min.
2, reduction temperature is to 500 DEG C-600 DEG C, keeps reaction chamber pressure 300mbar-600mbar, and being passed through flow is
10000sccm-20000sccm NH3, the H of TMGa, 100L/min-130L/min of 50sccm-100sccm2, serve as a contrast at sapphire
, growth thickness is the low temperature buffer layer GaN of 20nm-40nm at the end.
3, increasing the temperature to 1000 DEG C-1200 DEG C, keep reaction chamber pressure 300mbar-600mbar, being passed through flow is
The NH of 30000sccm-40000sccm3, the H of TMGa, 100L/min-130L/min of 200sccm-400sccm2, continued propagation 2
The GaN layer that undopes of μm-4 μm.
4, keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 20sccm-50sccm4, continued propagation 3 μm-4 μm doping Si
N-type GaN, Si doping content 5E18atoms/cm3-1E19atoms/cm3。
5, keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 2sccm-10sccm4, continued propagation 200nm-400nm adulterates
N-type GaN of Si, Si doping content 5E17atoms/cm3-1E18atoms/cm3。
6, keeping reaction chamber pressure 300mbar-400mbar, temperature 700 DEG C-750 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, TMIn, 100L/min-130L/min of TMGa, 1500sccm-2000sccm of 20sccm-40sccm
N2, the In that thickness is 2.5nm-3.5nm of growth doping InxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-
455nm；
Then liter high-temperature is to 750 DEG C-850 DEG C, keeps reaction chamber pressure 300mbar-400mbar, and being passed through flow is
The NH of 50000sccm-70000sccm3, the N of TMGa, 100L/min-130L/min of 20sccm-100sccm2, grow 8nm-
The GaN layer of 15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, control
Periodicity processed is 7-15.
7, keeping reaction chamber pressure 200mbar-400mbar, temperature 900 DEG C-950 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 30sccm-60sccm2, 100sccm-130sccm
The Cp of TMAl, 1000sccm-1300sccm2The p-type AlGaN layer of Mg, continued propagation 50nm-100nm, Al doping content
1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
8, keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 20sccm-100sccm2, 1000sccm-3000sccm
Cp2The p-type GaN layer mixing Mg of Mg, continued propagation 50nm-100nm, Mg doping content 1E19atoms/cm3-1E20atoms/
cm3。
9, it is cooled to 650 DEG C-680 DEG C, is incubated 20min-30min, be then switched off heating system, close to gas system, with
Stove cools down.
On same board, prepare sample 1 according to the growing method (method of comparative example) of conventional LED, according to
The method that this patent describes prepares sample 2；Sample 1 and sample 2 epitaxial growth method parameter difference are that the present invention is in growth
The step of growth SiInGaN/SiGaN superlattice layer, i.e. step 108 in embodiment 2, life is introduced after the p-type GaN layer of doping Mg
The growth conditions of other epitaxial layer long is just the same.
Sample 1 plates ITO layer about 150nm under identical front process conditions with sample 2, identical under conditions of plate Cr/Pt/Au
Electrode about 1500nm, identical under conditions of plating SiO2About 100nm, the most at identical conditions by sample grinding and cutting
Becoming the chip granule of 635 μm * 635 μm (25mil*25mil), then sample 1 and sample 2 each select 100 in same position
Crystal grain, under identical packaging technology, is packaged into white light LEDs.Then integrating sphere is used to test under the conditions of driving electric current 350mA
Sample 1 and the photoelectric properties of sample 2.
Table 1 is sample 1 and sample 2 growth parameter(s) contrast table, and table 2 is the electrical parameter contrast table of sample 1 and sample 2.
The contrast of table 1 growth parameter(s)
The comparison of table 2 sample 1,2 product electrical parameter
Be can be seen that by the Data Comparison of table 2, sample 2 is compared with sample 1, and brightness brings up to from 129.05Lm/w
137.21Lm/w, voltage is reduced to 3.07V from 3.17V, and backward voltage is reduced to 30.56V from 31.89V, and other Parameters variation are not
Greatly.It therefore follows that to draw a conclusion:
The LED that the growing method provided by this patent is made, voltage declines, and light efficiency promotes, and brightness significantly improves, light efficiency
Lifting be mostly derived from the reduction of voltage.Experimental data demonstrates the scheme of this patent can be obviously improved LED product light efficiency, lifting
The feasibility of product quality.
By various embodiments above, the application exists and provides the benefit that:
The present invention reduces the LED epitaxial growth method of contact resistance, compared with traditional method, growth growth doping Mg's
After p-type GaN layer, introduce growth SiInGaN/SiGaN superlattice layer step, using SiInGaN/SiGaN superlattice layer as
Contact layer.SiInGaN/SiGaN superlattice layer is as contact layer, and it contacts work function than pGaN and ITO in traditional method with ITO
Contact work function is compared much lower, thus SiInGaN/SiGaN superlattice layer effectively reduces pGaN epitaxial layer and ITO's
Contact resistance, significantly reduces driving voltage, so that the luminous efficiency of LED is effectively improved.
Those skilled in the art are it should be appreciated that embodiments herein can be provided as method, device or computer program
Product.Therefore, the reality in terms of the application can use complete hardware embodiment, complete software implementation or combine software and hardware
Execute the form of example.And, the application can use at one or more computers wherein including computer usable program code
The upper computer program product implemented of usable storage medium (including but not limited to disk memory, CD-ROM, optical memory etc.)
The form of product.
Described above illustrate and describes some preferred embodiments of the application, but as previously mentioned, it should be understood that the application
Be not limited to form disclosed herein, be not to be taken as the eliminating to other embodiments, and can be used for other combinations various,
Amendment and environment, and can be in invention contemplated scope described herein, by above-mentioned teaching or the technology of association area or knowledge
It is modified.And the change that those skilled in the art are carried out and change are without departing from spirit and scope, the most all should be in this Shen
Please be in the protection domain of claims.
Claims (9)
1. the LED epitaxial growth method reducing contact resistance, it is characterised in that include successively: process substrate, growing low temperature
Cushion GaN, growth undope GaN layer, growth doping Si N-type GaN layer, growth luminescent layer, growing P-type AlGaN layer, growth
Doping the p-type GaN layer of Mg, cooling down,
After the p-type GaN layer of described growth doping Mg, also include: growth SiInGaN/SiGaN superlattice layer,
Described growth SiInGaN/SiGaN superlattice layer is:
Keeping reaction chamber pressure 300mbar-600mbar, keep temperature 750 DEG C-850 DEG C, being passed through flow is 10sccm-20sccm
The N of TMGa, 100L/min-130L/min2, the SiH of 5sccm-10sccm4, the TMIn of 1000sccm-2000sccm, growth
SiInGaN/SiGaN superlattice layer,
Described growth SiInGaN/SiGaN superlattice layer, particularly as follows:
Keeping reaction chamber pressure 300mbar-600mbar, keep temperature 750 DEG C-850 DEG C, being passed through flow is 10sccm-20sccm
The N of TMGa, 100L/min-130L/min2, the SiH of 5sccm-10sccm4, the TMIn of 1000sccm-2000sccm, growth thickness
Degree is the SiInGaN layer of 1nm-2nm, and wherein Si doping content is 1E18atoms/cm3-5E18atoms/cm3, In doping content
For 1E19atoms/cm3-5E19atoms/cm3；
Keeping reaction chamber pressure 300mbar-600mbar, keep temperature 750 DEG C-850 DEG C, being passed through flow is 10sccm-20sccm
The N of TMGa, 100L/min-130L/min2, the SiH of 5sccm-10sccm4, growth thickness is the SiGaN layer of 1nm-2nm, its
In, Si doping content is 1E18atoms/cm3-5E18atoms/cm3；
SiInGaN layer described in cyclical growth and described SiGaN layer, growth cycle is 2-4,
The order growing described SiInGaN layer and the described SiGaN layer of growth is interchangeable.
Reduce the LED epitaxial growth method of contact resistance the most according to claim 1, it is characterised in that
Described process substrate, particularly as follows: at the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through the H of 100L/min-130L/min2, protect
Hold reaction chamber pressure 100mbar-300mbar, process Sapphire Substrate 8min-10min.
Reduce the LED epitaxial growth method of contact resistance the most according to claim 1, it is characterised in that
Described low temperature growth buffer layer, particularly as follows:
Reduction temperature, to 500 DEG C-600 DEG C, keeps reaction chamber pressure 300mbar-600mbar, and being passed through flow is 10000sccm-
20000sccm NH3, the H of TMGa, 100L/min-130L/min of 50sccm-100sccm2, grow thickness on a sapphire substrate
Degree is the low temperature buffer layer GaN of 20nm-40nm.
Reduce the LED epitaxial growth method of contact resistance the most according to claim 1, it is characterised in that
Described growth undopes GaN layer, particularly as follows:
Increasing the temperature to 1000 DEG C-1200 DEG C, keep reaction chamber pressure 300mbar-600mbar, being passed through flow is
The NH of 30000sccm-40000sccm3, the H of TMGa, 100L/min-130L/min of 200sccm-400sccm2, continued propagation 2
The GaN layer that undopes of μm-4 μm.
Reduce the LED epitaxial growth method of contact resistance the most according to claim 1, it is characterised in that
The N-type GaN layer of described growth doping Si, particularly as follows:
Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-400sccm
The H of TMGa, 100L/min-130L/min2, the SiH of 20sccm-50sccm4, the N-type of continued propagation 3 μm-4 μm doping Si
GaN, Si doping content 5E18atoms/cm3-1E19atoms/cm3；
Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-400sccm
The H of TMGa, 100L/min-130L/min2, the SiH of 2sccm-10sccm4, the N-type of continued propagation 200nm-400nm doping Si
GaN, Si doping content 5E17atoms/cm3-1E18atoms/cm3。
Reduce the LED epitaxial growth method of contact resistance the most according to claim 1, it is characterised in that
Described growth luminescent layer, particularly as follows:
Keeping reaction chamber pressure 300mbar-400mbar, temperature 700 DEG C-750 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, TMIn, 100L/min-130L/min of TMGa, 1500sccm-2000sccm of 20sccm-40sccm
N2, the In that thickness is 2.5nm-3.5nm of growth doping InxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-
455nm；
Then liter high-temperature is to 750 DEG C-850 DEG C, keeps reaction chamber pressure 300mbar-400mbar, and being passed through flow is
The NH of 50000sccm-70000sccm3, the N of TMGa, 100L/min-130L/min of 20sccm-100sccm2, grow 8nm-
The GaN layer of 15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, controls week
Issue is 7-15.
Reduce the LED epitaxial growth method of contact resistance the most according to claim 1, it is characterised in that
Described growing P-type AlGaN layer, particularly as follows:
Keeping reaction chamber pressure 200mbar-400mbar, temperature 900 DEG C-950 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 30sccm-60sccm2, 100sccm-130sccm
The Cp of TMAl, 1000sccm-1300sccm2The p-type AlGaN layer of Mg, continued propagation 50nm-100nm, Al doping content
1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
Reduce the LED epitaxial growth method of contact resistance the most according to claim 1, it is characterised in that
The p-type GaN layer of described growth doping Mg, particularly as follows:
Keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 20sccm-100sccm2, 1000sccm-3000sccm
Cp2The p-type GaN layer mixing Mg of Mg, continued propagation 50nm-100nm, Mg doping content 1E19atoms/cm3-1E20atoms/
cm3。
Reduce the LED epitaxial growth method of contact resistance the most according to claim 1, it is characterised in that
Described cooling down, particularly as follows:
It is cooled to 650 DEG C-680 DEG C, is incubated 20min-30min, be then switched off heating system, close to gas system, furnace cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610837668.0A CN106129199A (en) | 2016-09-21 | 2016-09-21 | Reduce the LED epitaxial growth method of contact resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610837668.0A CN106129199A (en) | 2016-09-21 | 2016-09-21 | Reduce the LED epitaxial growth method of contact resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106129199A true CN106129199A (en) | 2016-11-16 |
Family
ID=57271336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610837668.0A Pending CN106129199A (en) | 2016-09-21 | 2016-09-21 | Reduce the LED epitaxial growth method of contact resistance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106129199A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784195A (en) * | 2017-01-11 | 2017-05-31 | 湘能华磊光电股份有限公司 | A kind of epitaxial growth method for improving light emitting diode quality |
| CN109888066A (en) * | 2019-03-22 | 2019-06-14 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN111850508A (en) * | 2020-07-22 | 2020-10-30 | 湘能华磊光电股份有限公司 | LED epitaxial structure capable of reducing contact resistance and growth method thereof |
| CN114122206A (en) * | 2021-11-29 | 2022-03-01 | 湘能华磊光电股份有限公司 | Method for manufacturing light emitting diode |
| CN116504891A (en) * | 2023-06-29 | 2023-07-28 | 江西兆驰半导体有限公司 | Multi-quantum well layer, preparation method thereof and light-emitting diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355735A (en) * | 2015-11-03 | 2016-02-24 | 湘能华磊光电股份有限公司 | Epitaxial growth method for reducing contact resistance of LEDs |
| CN105870282A (en) * | 2016-04-14 | 2016-08-17 | 湘能华磊光电股份有限公司 | Growth method for current expansion layer and LED epitaxial structure comprising current expansion layer |
| CN105895757A (en) * | 2016-06-13 | 2016-08-24 | 湘能华磊光电股份有限公司 | LED epitaxial contact layer growing method |
-
2016
- 2016-09-21 CN CN201610837668.0A patent/CN106129199A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355735A (en) * | 2015-11-03 | 2016-02-24 | 湘能华磊光电股份有限公司 | Epitaxial growth method for reducing contact resistance of LEDs |
| CN105870282A (en) * | 2016-04-14 | 2016-08-17 | 湘能华磊光电股份有限公司 | Growth method for current expansion layer and LED epitaxial structure comprising current expansion layer |
| CN105895757A (en) * | 2016-06-13 | 2016-08-24 | 湘能华磊光电股份有限公司 | LED epitaxial contact layer growing method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784195A (en) * | 2017-01-11 | 2017-05-31 | 湘能华磊光电股份有限公司 | A kind of epitaxial growth method for improving light emitting diode quality |
| CN106784195B (en) * | 2017-01-11 | 2019-01-25 | 湘能华磊光电股份有限公司 | A kind of epitaxial growth method improving light emitting diode quality |
| CN109888066A (en) * | 2019-03-22 | 2019-06-14 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN109888066B (en) * | 2019-03-22 | 2021-06-01 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN111850508A (en) * | 2020-07-22 | 2020-10-30 | 湘能华磊光电股份有限公司 | LED epitaxial structure capable of reducing contact resistance and growth method thereof |
| CN114122206A (en) * | 2021-11-29 | 2022-03-01 | 湘能华磊光电股份有限公司 | Method for manufacturing light emitting diode |
| CN114122206B (en) * | 2021-11-29 | 2023-08-01 | 湘能华磊光电股份有限公司 | Manufacturing method of light-emitting diode |
| CN116504891A (en) * | 2023-06-29 | 2023-07-28 | 江西兆驰半导体有限公司 | Multi-quantum well layer, preparation method thereof and light-emitting diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106129199A (en) | Reduce the LED epitaxial growth method of contact resistance | |
| CN105932118B (en) | Improve the LED epitaxial growth methods of hole injection | |
| CN105869999A (en) | Epitaxial growing method of LED | |
| CN106098870A (en) | LED extension contact layer growing method | |
| CN105789388B (en) | Improve the LED growing methods of epitaxial crystal quality | |
| CN105355735B (en) | A kind of epitaxial growth method of reduction LED contact resistances | |
| CN106129198A (en) | Led epitaxial growth method | |
| CN105895753B (en) | Improve the epitaxial growth method of LED luminous efficiency | |
| CN106409999B (en) | A kind of LED extensional superlattice growing method | |
| CN105870270B (en) | LED extensional superlattice growing methods | |
| CN106206884A (en) | LED extension P layer growth method | |
| CN106328777A (en) | Light emitting diode stress release layer epitaxial growth method | |
| CN106328494A (en) | LED epitaxial growing method improving luminous efficiency | |
| CN105261678A (en) | Epitaxial growth method for increasing LED internal quantum efficiency | |
| CN106299062A (en) | The epitaxial growth method of current extending | |
| CN106410000B (en) | A kind of LED outer layer growth method | |
| CN105742419A (en) | Growth method for Novel LED epitaxial P layer | |
| CN107068817B (en) | LED epitaxial growth method | |
| CN105845788B (en) | A kind of LED current extension layer epitaxial growth method | |
| CN106206882A (en) | Improve the LED growing method of antistatic effect | |
| CN105350074A (en) | Epitaxial growth method for improving LED epitaxial crystal quality | |
| CN106784230B (en) | LED epitaxial growth method | |
| CN106129200B (en) | Reduce the LED growing method of epitaxial layer dislocation density | |
| CN106449905A (en) | LED growth method for improving quality of epitaxy crystal | |
| CN105655455B (en) | A kind of epitaxial growth method for lifting LED light effect |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161116 |