CN105895757A - LED epitaxial contact layer growing method - Google Patents
LED epitaxial contact layer growing method Download PDFInfo
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- CN105895757A CN105895757A CN201610413857.5A CN201610413857A CN105895757A CN 105895757 A CN105895757 A CN 105895757A CN 201610413857 A CN201610413857 A CN 201610413857A CN 105895757 A CN105895757 A CN 105895757A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention discloses an LED epitaxial contact layer growing method. The method comprises the following steps in sequence: processing a substrate; growing a low-temperature GaN nucleating layer, growing a high-temperature GaN buffer layer, growing a non-doped u-GaN layer, growing an Si-doped n-GaN layer, growing an MQW (multiple quantum wells) luminescent layer, growing a P-type AlGaN layer, growing a high-temperature P-type GaN layer, growing an Si-doped AlGaN contact layer and cooling. The growth of the Si-doped AlGaN contact layer is introduced after an Mg-doped P-type GaN layer is grown, namely an AlGaN: Si structure is designed on the final contact layer of LED epitaxy, so that a ZnO: Al(AZO) transparent conducting film current spreading layer can be well matched so as to reduce the contact resistance, and the working voltage of an LED chip can be reduced.
Description
Technical field
The application relates to LED epitaxial scheme applied technical field, specifically, relates to a kind of coupling AZO
The LED extension contact layer growing method of thin film current extending.
Background technology
LED (Light Emitting Diode, light emitting diode) is a kind of solid state lighting at present, volume
Little, power consumption long high brightness in low service life, environmental protection, the advantage such as sturdy and durable are recognized by consumers in general
Can, the scale of domestic production LED is also progressively expanding.
Along with the development of the industries such as quasiconductor, computer, solar energy, a kind of new functional material
Transparent conductive oxide film (transparent conducting oxide is called for short TCO thin film) produces therewith
Give birth to, grow up.This kind of thin film has that forbidden band width, visible range light transmission be high and resistivity is low etc.
Photoelectric characteristic, in semiconductor photoelectric device field, solaode, plane show, specific function window
The aspects such as coating have broad application prospects.Wherein technology of preparing is the most ripe, most widely used surely belongs to
In2O3Base (In2O3: Sn, it is called for short ITO) thin film.But, due to In in ito thin film2O3Price is held high
Expensive, thus cause production cost the highest；And, In material is poisonous, to people in preparation and application process
Body is harmful to；Additionally, the atomic weight of Sn and In is relatively big, easily infiltrates into substrate interior in film forming procedure, poison
Changing backing material, especially in liquid crystal display device, contamination phenomenon is serious.And ZnO: Al (being called for short AZO)
Zn source low price in transparent conductive film, abundance, nontoxic, and in hydrogen plasma
Stability is better than ito thin film, have simultaneously can be comparable with ito thin film photoelectric characteristic.So,
AZO thin film replaces ito thin film and has certain superiority in development.
Apply in the market in LED chip be used as current extending be ITO (In2O3∶Sn)
Transparent conductive film, so corresponding LED extension contact layer is mainly designed for mating ITO material,
Typically use GaN material.And if do extension layer in chip top application AZO transparent conductive film, for
Reducing contact resistance, extension contact layer is badly in need of changing.
Summary of the invention
In view of this, technical problems to be solved in this application there is provided a kind of LED extension contact layer
Growing method, introduces the AlGaN contact layer of doping Si after the p-type GaN layer of growth doping Mg
Growth, i.e. in the contact layer design AlGaN:Si structure that LED extension is last, it is possible to well mate
ZnO:Al (AZO) transparent conductive film current extending, to reduce contact resistance such that it is able to reduces
The running voltage of LED chip.
In order to solve above-mentioned technical problem, the application has a following technical scheme:
A kind of LED extension contact layer growing method, it is characterised in that include successively:
Process substrate, growing low temperature GaN nucleating layer, growth high temperature GaN cushion, growth undoped
U-GaN layer, growth doping Si n-GaN layer, growth MQW MQW luminescent layer, growth
P-type AlGaN layer, growth high temperature p-type GaN layer, growth doping the AlGaN contact layer of Si, cooling
Cooling,
The AlGaN contact layer of described growth doping Si, be further:
Keeping growth temperature is 850 DEG C-1050 DEG C, is controlled by growth pressure at 100Torr-500Torr, logical
Enter TEGa, TMAl and SiH4As MO source, and it is passed through NH3, growth thickness is 5nm-20nm
The AlGaN contact layer of doping Si,
Wherein, it is passed through NH3Control than the component for 1000-5000, Al with the mole of TEGa
3%-30%, Si doping content is 1E19atoms/cm3-1E21atoms/cm3。
Preferably, wherein:
Described process substrate, be further:
By Sapphire Substrate at H2Annealing in atmosphere, clean substrate surface, temperature is 1050 DEG C-1150
℃。
Preferably, wherein:
Described growing low temperature GaN nucleating layer, be further:
Reduction temperature, to 500 DEG C-620 DEG C, keeps reaction chamber pressure 400Torr-650Torr, is passed through NH3
And TMGa, growth thickness is the low temperature GaN nucleating layer of 20nm-40nm, wherein, is passed through NH3With
The mole of TMGa is than for 500-3000.
Preferably, wherein:
Described growth high temperature GaN cushion, be further:
After described growing low temperature GaN nucleating layer terminates, stop being passed through TMGa, carry out at in-situ annealing
Reason, is increased to 1000 DEG C-1100 DEG C by annealing temperature, and annealing time is 5min-10min；
After having annealed, regulating temperature to 900 DEG C-1050 DEG C, growth pressure control is
400Torr-650Torr, continues to be passed through TMGa, and epitaxial growth thickness is the high temperature GaN of 0.2 μm-1 μm
Cushion, wherein, is passed through NH3With the mole of TMGa than for 500-3000.
Preferably, wherein:
The u-GaN layer of described growth undoped, be further:
Increase the temperature to 1050 DEG C-1200 DEG C, keep reaction chamber pressure 100Torr-500Torr, be passed through NH3
And TMGa, the undoped u-GaN layer of continued propagation 1 μm-3 μm, wherein, it is passed through NH3And TMGa
Mole than for 300-3000.
Preferably, wherein:
The n-GaN layer of described growth doping Si, be further:
Keeping reaction chamber temperature is 1050 DEG C-1200 DEG C, and keeping reaction chamber pressure is 100Torr-600Torr,
It is passed through NH3, TMGa and SiH4, continued propagation thickness is the n-GaN layer of the doping Si of 2 μm-4 μm,
Wherein, Si doping content 5E18atoms/cm3-2E19atoms/cm3, it is passed through NH3With rubbing of TMGa
Your amount ratio is 300-3000.
Preferably, wherein:
Described growth MQW MQW luminescent layer, be further:
It is passed through TEGa, TMIn and SiH4 as MO source, the In in 5-15 cycle of growthyGa(1-y)
N/GaN trap builds structure composition, is further:
Keep reaction chamber pressure 100Torr-500Torr, temperature 700 DEG C-800 DEG C, the thickness of growth doping In
Degree is the In of 2nm-5nmyGa(1-y)N quantum well layer, y=0.1-0.3, it is passed through NH3With rubbing of TEGa
Your amount ratio is 300-5000；
Then liter high-temperature is to 800 DEG C-950 DEG C, keeps reaction chamber pressure 100Torr-500Torr, growth
Thickness is the GaN barrier layer of 8nm-15nm, wherein, is passed through NH3With the mole ratio of TEGa it is
300-5000, Si doping content is 7E16atoms/cm3-7E17atoms/cm3,
Repeat InyGa(1-y)The growth of N quantum well layer, then repeats the growth of GaN barrier layer, the most raw
Long InxGa(1-x)N/GaN luminescent layer, controlling periodicity is 5-15.
Preferably, wherein:
Described growing P-type AlGaN layer, be further:
Keep reaction chamber pressure 20Torr-200Torr, temperature 900 DEG C-1100 DEG C, be passed through TMAl, TMGa
And Cp2Mg is as MO source, and continued propagation thickness is the p-type AlGaN layer of 50nm-200nm, raw
Long-time is 3min-10min, wherein, is passed through NH3With the mole of TMGa than for 1000-20000,
The molar constituent of Al is 10%-30%, Mg doping content 1E18atoms/cm3-1E21atoms/cm3。
Preferably, wherein:
Described growth high temperature p-type GaN layer, be further:
Keeping reaction chamber pressure 100Torr-500Torr, growth temperature is 850 DEG C-1000 DEG C, is passed through TMGa
And Cp2Mg is as MO source, and continued propagation thickness is p-type GaN mixing Mg of 100nm-800nm
Layer, wherein, is passed through NH3With the mole of TMGa than for 300-5000, Mg doping content
1E18atoms/cm3-1E21atoms/cm3。
Preferably, wherein:
Described cooling down, be further:
After epitaxial growth terminates, the temperature of reative cell is reduced to 650 DEG C-800 DEG C, uses pure N2Atmosphere
Carry out making annealing treatment 5min-10min, the most near room temperature, terminate growth.
Compared with prior art, method described herein, reach following effect:
LED extension contact layer growing method of the present invention, compared with traditional method, at growth doping Mg
P-type GaN layer complete to introduce afterwards the growth of AlGaN contact layer of doping Si, utilize doping Si
AlGaN contact layer replace the GaN contact layer of traditional doping Mg, AlGaN contact layer and GaN
Contact layer is compared, poor lower with the barrier height of AZO thin-film material, simultaneously at AlGaN contact layer weight
Doping Si can allow semiconductor depletion region narrow, and makes carrier have more chance tunnelling, to mate ZnO:
Al (AZO) transparent conductive film current extending, reduces contact resistance, thus reduces LED core
The running voltage of sheet.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing further understanding of the present application, constitutes of the application
Point, the schematic description and description of the application is used for explaining the application, is not intended that the application's
Improper restriction.In the accompanying drawings:
Fig. 1 is the flow chart of LED extension contact layer growing method of the present invention；
Fig. 2 is the structural representation of LED epitaxial layer in the present invention；
Fig. 3 is the structural representation of LED epitaxial layer in comparative example；
Fig. 4 is the chip voltage scattergram of sample 1, sample 2 and sample 3；
Fig. 5 is the chip brightness scattergram of sample 1, sample 2 and sample 3；
Wherein, 1, the AlGaN contact layer of doping Si, 2, high temperature p-type GaN layer, 3, p-type AlGaN
Layer, 4, MQW MQW luminescent layer, 5, n-GaN layer, 6, u-GaN layer, 7, GaN delays
Rush layer (including low temperature nucleation layer and high temperature buffer layer), 8, substrate, 9, Mg:GaN contact layer.
Detailed description of the invention
As employed some vocabulary in the middle of description and claim to censure specific components.This area skill
Art personnel are it is to be appreciated that hardware manufacturer may call same assembly with different nouns.This explanation
In the way of book and claim not difference by title is used as distinguishing assembly, but with assembly in function
On difference be used as distinguish criterion." bag as mentioned by the middle of description in the whole text and claim
Contain " it is an open language, therefore " comprise but be not limited to " should be construed to." substantially " refer to receivable
In range of error, those skilled in the art can solve described technical problem, base in the range of certain error
Originally described technique effect is reached.Additionally, " coupling " word comprises any directly and indirectly electrical coupling at this
Catcher section.Therefore, if a first device is coupled to one second device described in literary composition, then described first is represented
Device can directly be electrically coupled to described second device, or by other devices or to couple means the most electric
Property is coupled to described second device.Description subsequent descriptions is to implement the better embodiment of the application, so
For the purpose of described description is the rule so that the application to be described, it is not limited to scope of the present application.
The protection domain of the application is when being as the criterion depending on the defined person of claims.
Embodiment 1
The present invention uses VEECO long high brightness GaN-based LED in MOCVD next life.Use
High-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As
N source, metal organic source trimethyl gallium (TMGa), metal organic source triethyl-gallium (TEGa), three
Methyl indium (TMIn) is as indium source, and trimethyl aluminium (TMAl) is as aluminum source, and N type dopant is silicon
Alkane (SiH4), P-type dopant is two cyclopentadienyl magnesium (CP2Mg), substrate is (001) surface sapphire, reaction
Pressure is between 100Torr to 1000Torr.Concrete growth pattern is following (epitaxial structure sees Fig. 2):
A kind of LED extension contact layer growing method, sees Fig. 1, it is characterised in that include successively: place
Reason substrate, growing low temperature GaN nucleating layer, growth high temperature GaN cushion, the u-GaN of growth undoped
Layer, the n-GaN layer of growth doping Si, growth MQW MQW luminescent layer, growing P-type AlGaN
Layer, the p-type GaN layer of growth doping Mg, growth doping the AlGaN contact layer of Si, cooling down,
The AlGaN contact layer of described growth doping Si, be further:
Keeping growth temperature is 850 DEG C-1050 DEG C, is controlled by growth pressure at 100Torr-500Torr, logical
Enter TMGa, TMAl and SiH4As MO source, and it is passed through NH3, growth thickness is 5nm-20nm
The AlGaN contact layer of doping Si,
Wherein, it is passed through NH3Control than the component for 1000-5000, Al with the mole of TEGa
3%-30%, Si doping content is 1E19atoms/cm3-1E21atoms/cm3。
The LED extension contact layer growing method of the present invention, complete in the p-type GaN layer of growth doping Mg
Introduce the growth of the AlGaN contact layer of doping Si after one-tenth, utilize the AlGaN contact layer of doping Si to take
For the GaN contact layer of traditional doping Mg, AlGaN contact layer is compared with GaN contact layer, with AZO
The barrier height difference of thin-film material is lower, quasiconductor can be allowed to consume at AlGaN contact layer heavy doping Si simultaneously
District to the greatest extent narrows, and makes carrier have more chance tunnelling, to mate ZnO: Al (AZO) electrically conducting transparent
Thin film current extending, reduces contact resistance, thus reduces the running voltage of LED chip.
Embodiment 2
The Application Example of the LED extension contact layer growing method of the present invention presented below, its epitaxy junction
Structure sees Fig. 2, and growing method sees Fig. 1.Use VEECO long high brightness GaN in MOCVD next life
Base LED epitaxial wafer.Use high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas conduct
Carrier gas, high-purity N H3As N source, metal organic source trimethyl gallium (TMGa), metal organic source three
Ethyl gallium (TEGa), trimethyl indium (TMIn) is as indium source, and trimethyl aluminium (TMAl) is as aluminum
Source, N type dopant is silane (SiH4), P-type dopant is two cyclopentadienyl magnesium (CP2Mg), substrate is (001)
Surface sapphire, reaction pressure is between 100Torr to 1000Torr.Concrete growth pattern is as follows:
Step 101, process substrate:
By Sapphire Substrate at H2Annealing in atmosphere, clean substrate surface, temperature is 1050 DEG C-1150
℃。
Step 102, growth growing low temperature GaN nucleating layer:
Reduction temperature, to 500 DEG C-620 DEG C, keeps reaction chamber pressure 400Torr-650Torr, is passed through NH3、
And TMGa, growth thickness is the low temperature GaN nucleating layer of 20nm-40nm, wherein, is passed through NH3With
The mole of TMGa is 500-3000 than for 500-3000, i.e. V/ III mol ratio.
Step 103, growth growth high temperature GaN cushion:
After described growing low temperature GaN nucleating layer terminates, stop being passed through TMGa, carry out at in-situ annealing
Reason, is increased to 1000 DEG C-1100 DEG C by annealing temperature, and annealing time is 5min-10min；
After having annealed, regulating temperature to 900 DEG C-1050 DEG C, growth pressure control is
400Torr-650Torr, continues to be passed through TMGa, and epitaxial growth thickness is the high temperature GaN of 0.2 μm-1 μm
Cushion, wherein, is passed through NH3With the mole of TMGa than for 500-3000, i.e. V/ III mol ratio
For 500-3000.
Step 104, the u-GaN layer of growth undoped:
Increase the temperature to 1050 DEG C-1200 DEG C, keep reaction chamber pressure 100Torr-500Torr, be passed through NH3
And TMGa, the undoped u-GaN layer of continued propagation 1 μm-3 μm, wherein, it is passed through NH3And TMGa
Mole be 300-3000 than for 300-3000, i.e. V/ III mol ratio.
Step 105, the n-GaN layer of growth growth doping Si:
Keeping reaction chamber temperature is 1050 DEG C-1200 DEG C, and keeping reaction chamber pressure is 100Torr-600Torr,
It is passed through NH3, TMGa and SiH4, continued propagation thickness is the n-GaN layer of the doping Si of 2 μm-4 μm,
Wherein, Si doping content 5E18atoms/cm3-2E19atoms/cm3, it is passed through NH3With rubbing of TMGa
Your amount is 300-3000 than for 300-3000, i.e. V/ III mol ratio.(wherein, 5E18 represents 5 and is multiplied by
18 powers of 10 i.e. 5*1019, by that analogy, atoms/cm3For doping content unit, lower with)
Step 106, growth MQW MQW luminescent layer:
It is passed through TEGa, TMIn and SiH4 as MO source, the In in 5-15 cycle of growthyGa(1-y)
N/GaN trap builds structure composition, is further:
Keep reaction chamber pressure 100Torr-500Torr, temperature 700 DEG C-800 DEG C, the thickness of growth doping In
Degree is the In of 2nm-5nmyGa(1-y)N quantum well layer, y=0.1-0.3, it is passed through rubbing of NH3 and TMGa
Your amount ratio is 300-5000；
Then liter high-temperature is to 800 DEG C-950 DEG C, keeps reaction chamber pressure 100Torr-500Torr, growth
Thickness is the GaN barrier layer of 8nm-15nm, and wherein, the mole ratio being passed through NH3 and TMGa is
300-5000, i.e. V/ III mol ratio is that 300-5000, Si doping content is
7E16atoms/cm3-7E17atoms/cm3,
Repeat InyGa(1-y)The growth of N quantum well layer, then repeats the growth of GaN barrier layer, the most raw
Long InxGa(1-x)N/GaN luminescent layer, controlling periodicity is 5-15.
Step 107, growing P-type AlGaN layer:
Keep reaction chamber pressure 20Torr-200Torr, temperature 900 DEG C-1100 DEG C, be passed through TMAl, TMGa
And Cp2Mg is as MO source, and continued propagation thickness is the p-type AlGaN layer of 50nm-200nm, raw
Long-time is 3min-10min, wherein, is passed through NH3With the mole of TMGa than for 1000-20000,
I.e. V/ III mol ratio be the molar constituent of 1000-20000, Al be 10%-30%, Mg doping content
1E18atoms/cm3-1E21atoms/cm3。
Step 108, the p-type GaN layer of growth doping Mg:
Keeping reaction chamber pressure 100Torr-500Torr, growth temperature is 850 DEG C-1000 DEG C, is passed through TMGa
And Cp2Mg is as MO source, and continued propagation thickness is p-type GaN mixing Mg of 100nm-800nm
Layer, wherein, is passed through NH3With the mole of TMGa than for 300-5000, i.e. V/ III mol ratio it is
300-5000, Mg doping content 1E18atoms/cm3-1E21atoms/cm3。
Step 109, the AlGaN contact layer of growth doping Si:
Keeping growth temperature is 850 DEG C-1050 DEG C, is controlled by growth pressure at 100Torr-500Torr, logical
Enter TEGa, TMAl and SiH4As MO source, and it is passed through NH3, growth thickness is 5nm-20nm
The AlGaN contact layer of doping Si,
Wherein, it is passed through NH3With the mole of TEGa than for 1000-5000, i.e. V/ III mol ratio it is
The component of 1000-5000, Al controls at 3%-30%, and Si doping content is
1E19atoms/cm3-1E21atoms/cm3。
Step 110, cooling down:
After epitaxial growth terminates, the temperature of reative cell is reduced to 650 DEG C-800 DEG C, uses pure N2Atmosphere
Carry out making annealing treatment 5min-10min, the most near room temperature, terminate growth.
The application focuses on step 109, after high temperature p-type GaN layer has grown, by LED
The last contact layer of extension is designed as AlGaN:Si structure, replaces original GaN:Mg contact layer, because of
GaN is compared for AlGaN, poor lower with the barrier height of AZO thin-film material, heavy doping Si simultaneously
Semiconductor depletion region can be allowed to narrow, make carrier have more chance tunnelling, to mate ZnO: Al (AZO)
Transparent conductive film current extending, reduces contact resistance, thus reduces the work electricity of LED chip
Pressure.
Embodiment 3
A kind of conventional LED extension contact layer growing method presented below is as the comparative example of the present invention.
The growing method of conventional LED extension is (epitaxial layer structure sees Fig. 3):
1, by Sapphire Substrate at H2Annealing in atmosphere, clean substrate surface, temperature is 1050
℃-1150℃。
2, reduction temperature is to 500 DEG C-620 DEG C, keeps reaction chamber pressure 400Torr-650Torr, is passed through
NH3And TMGa, growth thickness is the low temperature GaN nucleating layer of 20nm-40nm, and wherein, V/ III rubs
That ratio is 500-3000.
3, after described growing low temperature GaN nucleating layer terminates, stop being passed through TMGa, carry out moving back in situ
Fire processes, and annealing temperature is increased to 1000 DEG C-1100 DEG C, and annealing time is 5min-10min；Annealing
After completing, regulating temperature to 900 DEG C-1050 DEG C, growth pressure controls to be 400Torr-650Torr, continues
Continuing and be passed through TMGa, epitaxial growth thickness is the high temperature GaN cushion of 0.2 μm-1 μm, wherein,
V/ III mol ratio is 500-3000.
4, after high temperature GaN buffer growth terminates, increase the temperature to 1050 DEG C-1200 DEG C, keep anti-
Answer cavity pressure 100Torr-500Torr, be passed through NH3And TMGa, non-the mixing of continued propagation 1 μm-3 μm
Miscellaneous u-GaN layer, wherein, V/ III mol ratio is 300-3000.
5, after the growth of high temperature undoped GaN layer terminates, keeping reaction chamber temperature is 1050 DEG C-1200 DEG C,
Keeping reaction chamber pressure is 100Torr-600Torr, is passed through NH3, TMGa and SiH4, continued propagation is thick
Degree is the n-GaN layer of the doping Si of 2 μm-4 μm, wherein, Si doping content
5E18atoms/cm3-2E19atoms/cm3, V/ III mol ratio is 300-3000.
6, TEGa, TMIn and SiH4 it are passed through as MO source, the In in 5-15 cycle of growthyGa(1-y)
N/GaN trap builds structure composition, is further:
Keep reaction chamber pressure 100Torr-500Torr, temperature 700 DEG C-800 DEG C, the thickness of growth doping In
Degree is the In of 2nm-5nmyGa(1-y)N quantum well layer, y=0.1-0.3, V/ III mol ratio be 300-5000；
Then liter high-temperature is to 800 DEG C-950 DEG C, keeps reaction chamber pressure 100Torr-500Torr, growth
Thickness is the GaN barrier layer of 8nm-15nm, and wherein V/ III mol ratio is 300-5000, Si doping content
For 7E16atoms/cm3-7E17atoms/cm3,
Repeat InyGa(1-y)The growth of N quantum well layer, then repeats the growth of GaN barrier layer, the most raw
Long InxGa(1-x)N/GaN luminescent layer, controlling periodicity is 5-15.
7, after multicycle SQW MQW light emitting layer grown terminates, reaction chamber pressure is kept
20Torr-200Torr, temperature 900 DEG C-1100 DEG C, is passed through TMAl, TMGa and Cp2Mg is as MO
Source, continued propagation thickness is the p-type AlGaN layer of 50nm-200nm, and growth time is 3min-10min,
Wherein, V/ III mol ratio be the molar constituent of 1000-20000, Al be 10%-30%, Mg doping content
1E18atoms/cm3-1E21atoms/cm3。
8, after the growth of p-type AlGaN layer terminates, reaction chamber pressure 100Torr-500Torr, growth are kept
Temperature is 850 DEG C-1000 DEG C, is passed through TMGa and Cp2Mg as MO source, continued propagation thickness is
The p-type GaN layer mixing Mg of 100nm-800nm, wherein, V/ III mol ratio is 300-5000, Mg
Doping content 1E18atoms/cm3-1E21atoms/cm3。
9, mix Mg p-type GaN layer growth terminate after, growth thickness is p-type GaN of 5nm-20nm
Contact layer, i.e. Mg:GaN, MO source used is TEGa and Cp2Mg, growth temperature is 850 DEG C-1050
DEG C, growth pressure be 100Torr-500Torr, V/ III mol ratio be 1000-5000, Mg doping content
1E19atoms/cm3-1E21atoms/cm3。
10, after epitaxial growth terminates, the temperature of reative cell is reduced to 650 DEG C-800 DEG C, uses pure N2Atmosphere
Enclose and carry out making annealing treatment 5min-10min, the most near room temperature, terminate growth.
On same board, according to growing method (method of the comparative example) system of conventional LED
Standby sample 1, prepares sample 2 and sample 3 according to the method that this patent describes；Sample 1 and sample 2, sample
It is raw that product 3 epitaxial growth method parameter difference is that the present invention introduces after growth high temperature p-type GaN layer
The step of the AlGaN contact layer of long doping Si, i.e. step 109 in embodiment 2, step 109 with
In the 9th step in comparative example, p-type GaN contact layer is entirely different, grows the life of other epitaxial layer
Elongate member just the same (seeing table 1).
It is transparent that sample 1, sample 2 plate ZnO:Al (AZO) with sample 3 under identical front process conditions
Conductive film does current extending, sample grinding and cutting is become the most at identical conditions
The chip granule of 762 μm * 762 μm (30mil*30mil), then sample 1, sample 2 and sample 3 are in phase
Co-located each selects 150 crystal grain, under identical packaging technology, is packaged into white light LEDs.Then
Use integrating sphere test sample 1, sample 2 and photo electric of sample 3 under the conditions of driving electric current 350mA
Energy.
Table 1 is sample 1, sample 2 and sample 3 growth parameter(s) contrast table, and sample 1 uses routine growth
Mode, the contact layer of growth is Mg:GaN structure, and sample 2 uses the growth pattern of the application, growth
Contact layer be Si:AlGaN structure, the SiH being passed through4About exist for 10sccm, Si concentration
5E19atoms/cm3, sample 3 uses the growth pattern of the application, and the contact layer of growth is Si:AlGaN
Structure, the SiH being passed through4For 20sccm, Si concentration about at 1E20atoms/cm3。
The contrast of table 1 growth parameter(s)
Fig. 4 is the chip voltage scattergram of sample 1, sample 2 and sample 3, and Fig. 5 is sample 1, sample
The chip brightness scattergram of product 2 and sample 3.
The data that integrating sphere obtains are analyzed contrast, draw Fig. 4 and Fig. 5.As can be seen from Figure 4,
Sample 2 relatively sample 1 driving voltage is reduced to about 3.25V from 3.4V-3.5V, sample 3 relatively sample 1
Driving voltage is reduced to about 3.2V from 3.4V-3.5V.Can draw from Fig. 5 data, sample 1, sample
2 and the brightness of sample 3 be more or less the same, all near 530mw.So it may be concluded that: the application carries
The growing method of confession can reduce AZO thin film and make the driving voltage of current extending.
By various embodiments above, the application exists and provides the benefit that:
LED extension contact layer growing method of the present invention, compared with traditional method, at growth doping Mg
P-type GaN layer complete to introduce afterwards the growth of AlGaN contact layer of doping Si, utilize doping Si
AlGaN contact layer replace the GaN contact layer of traditional doping Mg, AlGaN contact layer and GaN
Contact layer is compared, poor lower with the barrier height of AZO thin-film material, simultaneously at AlGaN contact layer weight
Doping Si can allow semiconductor depletion region narrow, and makes carrier have more chance tunnelling, to mate ZnO:
Al (AZO) transparent conductive film current extending, reduces contact resistance, thus reduces LED core
The running voltage of sheet.
Those skilled in the art it should be appreciated that embodiments herein can be provided as method, device or
Computer program.Therefore, the application can use complete hardware embodiment, complete software implementation,
Or combine the form of embodiment in terms of software and hardware.And, the application can use one or more
The computer-usable storage medium wherein including computer usable program code (includes but not limited to disk
Memorizer, CD-ROM, optical memory etc.) form of the upper computer program implemented.
Described above illustrate and describes some preferred embodiments of the application, but as previously mentioned, it should reason
Solve the application and be not limited to form disclosed herein, be not to be taken as the eliminating to other embodiments,
And can be used for various other combination, amendment and environment, and can in invention contemplated scope described herein,
It is modified by above-mentioned teaching or the technology of association area or knowledge.And those skilled in the art are carried out changes
Move and change is without departing from spirit and scope, the most all should be in the protection of the application claims
In the range of.
Claims (10)
1. a LED extension contact layer growing method, it is characterised in that include successively:
Process substrate, growing low temperature GaN nucleating layer, growth high temperature GaN cushion, growth undoped
U-GaN layer, growth doping Si n-GaN layer, growth MQW MQW luminescent layer, growth
P-type AlGaN layer, growth high temperature p-type GaN layer, growth doping the AlGaN contact layer of Si, cooling
Cooling,
The AlGaN contact layer of described growth doping Si, be further:
Keeping growth temperature is 850 DEG C-1050 DEG C, is controlled by growth pressure at 100Torr-500Torr, logical
Enter TEGa, TMAl and SiH4As MO source, and it is passed through NH3, growth thickness is 5nm-20nm
The AlGaN contact layer of doping Si,
Wherein, it is passed through NH3Control than the component for 1000-5000, Al with the mole of TEGa
3%-30%, Si doping content is 1E19atoms/cm3-1E21atoms/cm3。
LED extension contact layer growing method the most according to claim 1, it is characterised in that
Described process substrate, be further:
By Sapphire Substrate at H2Annealing in atmosphere, clean substrate surface, temperature is 1050 DEG C-1150
℃。
LED extension contact layer growing method the most according to claim 1, it is characterised in that
Described growing low temperature GaN nucleating layer, be further:
Reduction temperature, to 500 DEG C-620 DEG C, keeps reaction chamber pressure 400Torr-650Torr, is passed through NH3
And TMGa, growth thickness is the low temperature GaN nucleating layer of 20nm-40nm, wherein, is passed through NH3With
The mole of TMGa is than for 500-3000.
LED extension contact layer growing method the most according to claim 1, it is characterised in that
Described growth high temperature GaN cushion, be further:
After described growing low temperature GaN nucleating layer terminates, stop being passed through TMGa, carry out at in-situ annealing
Reason, is increased to 1000 DEG C-1100 DEG C by annealing temperature, and annealing time is 5min-10min；
After having annealed, regulating temperature to 900 DEG C-1050 DEG C, growth pressure control is
400Torr-650Torr, continues to be passed through TMGa, and epitaxial growth thickness is the high temperature GaN of 0.2 μm-1 μm
Cushion, wherein, is passed through NH3With the mole of TMGa than for 500-3000.
LED extension contact layer growing method the most according to claim 1, it is characterised in that
The u-GaN layer of described growth undoped, be further:
Increase the temperature to 1050 DEG C-1200 DEG C, keep reaction chamber pressure 100Torr-500Torr, be passed through NH3
And TMGa, the undoped u-GaN layer of continued propagation 1 μm-3 μm, wherein, it is passed through NH3And TMGa
Mole than for 300-3000.
LED extension contact layer growing method the most according to claim 1, it is characterised in that
The n-GaN layer of described growth doping Si, be further:
Keeping reaction chamber temperature is 1050 DEG C-1200 DEG C, and keeping reaction chamber pressure is 100Torr-600Torr,
It is passed through NH3, TMGa and SiH4, continued propagation thickness is the n-GaN layer of the doping Si of 2 μm-4 μm,
Wherein, Si doping content 5E18atoms/cm3-2E19atoms/cm3, it is passed through NH3With rubbing of TMGa
Your amount ratio is 300-3000.
LED extension contact layer growing method the most according to claim 1, it is characterised in that
Described growth MQW MQW luminescent layer, be further:
It is passed through TEGa, TMIn and SiH4 as MO source, the In in 5-15 cycle of growthyGa(1-y)
N/GaN trap builds structure composition, is further:
Keep reaction chamber pressure 100Torr-500Torr, temperature 700 DEG C-800 DEG C, the thickness of growth doping In
Degree is the In of 2nm-5nmyGa(1-y)N quantum well layer, y=0.1-0.3, it is passed through NH3With rubbing of TEGa
Your amount ratio is 300-5000；
Then liter high-temperature is to 800 DEG C-950 DEG C, keeps reaction chamber pressure 100Torr-500Torr, growth
Thickness is the GaN barrier layer of 8nm-15nm, wherein, is passed through NH3With the mole ratio of TEGa it is
300-5000, Si doping content is 7E16atoms/cm3-7E17atoms/cm3,
Repeat InyGa(1-y)The growth of N quantum well layer, then repeats the growth of GaN barrier layer, the most raw
Long InxGa(1-x)N/GaN luminescent layer, controlling periodicity is 5-15.
LED extension contact layer growing method the most according to claim 1, it is characterised in that
Described growing P-type AlGaN layer, be further:
Keep reaction chamber pressure 20Torr-200Torr, temperature 900 DEG C-1100 DEG C, be passed through TMAl, TMGa
And Cp2Mg is as MO source, and continued propagation thickness is the p-type AlGaN layer of 50nm-200nm, raw
Long-time is 3min-10min, wherein, is passed through NH3With the mole of TMGa than for 1000-20000,
The molar constituent of Al is 10%-30%, Mg doping content 1E18atoms/cm3-1E21atoms/cm3。
LED extension contact layer growing method the most according to claim 1, it is characterised in that
Described growth high temperature p-type GaN layer, be further:
Keeping reaction chamber pressure 100Torr-500Torr, growth temperature is 850 DEG C-1000 DEG C, is passed through TMGa
And Cp2Mg is as MO source, and continued propagation thickness is p-type GaN mixing Mg of 100nm-800nm
Layer, wherein, is passed through NH3With the mole of TMGa than for 300-5000, Mg doping content
1E18atoms/cm3-1E21atoms/cm3。
LED extension contact layer growing method the most according to claim 1, it is characterised in that
Described cooling down, be further:
After epitaxial growth terminates, the temperature of reative cell is reduced to 650 DEG C-800 DEG C, uses pure N2Atmosphere
Carry out making annealing treatment 5min-10min, the most near room temperature, terminate growth.
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| CN106129199A (en) * | 2016-09-21 | 2016-11-16 | 湘能华磊光电股份有限公司 | Reduce the LED epitaxial growth method of contact resistance |
| CN106299045A (en) * | 2016-09-27 | 2017-01-04 | 湘能华磊光电股份有限公司 | A kind of LED extension contact layer growing method |
| CN106299064A (en) * | 2016-09-27 | 2017-01-04 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth method mating AZO thin film |
| CN107768489A (en) * | 2017-10-16 | 2018-03-06 | 湘能华磊光电股份有限公司 | A kind of method of LED epitaxial growths |
| CN107785464A (en) * | 2017-10-16 | 2018-03-09 | 湘能华磊光电股份有限公司 | A kind of method of LED epitaxial growths |
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| CN106129199A (en) * | 2016-09-21 | 2016-11-16 | 湘能华磊光电股份有限公司 | Reduce the LED epitaxial growth method of contact resistance |
| CN106299045A (en) * | 2016-09-27 | 2017-01-04 | 湘能华磊光电股份有限公司 | A kind of LED extension contact layer growing method |
| CN106299064A (en) * | 2016-09-27 | 2017-01-04 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth method mating AZO thin film |
| CN107768489A (en) * | 2017-10-16 | 2018-03-06 | 湘能华磊光电股份有限公司 | A kind of method of LED epitaxial growths |
| CN107785464A (en) * | 2017-10-16 | 2018-03-09 | 湘能华磊光电股份有限公司 | A kind of method of LED epitaxial growths |
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| CN117476827A (en) * | 2023-12-25 | 2024-01-30 | 江西兆驰半导体有限公司 | Epitaxial wafer of light-emitting diode with low contact resistance and preparation method thereof |
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