CN106129200B - Reduce the LED growing method of epitaxial layer dislocation density - Google Patents
Reduce the LED growing method of epitaxial layer dislocation density Download PDFInfo
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- CN106129200B CN106129200B CN201610837716.6A CN201610837716A CN106129200B CN 106129200 B CN106129200 B CN 106129200B CN 201610837716 A CN201610837716 A CN 201610837716A CN 106129200 B CN106129200 B CN 106129200B
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000012010 growth Effects 0.000 claims abstract description 56
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 36
- 239000010980 sapphire Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 12
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000003116 impacting effect Effects 0.000 claims description 4
- 238000005546 reactive sputtering Methods 0.000 claims description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 22
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 21
- 239000000463 material Substances 0.000 description 19
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 17
- 239000011777 magnesium Substances 0.000 description 16
- 238000012360 testing method Methods 0.000 description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 13
- 229910052593 corundum Inorganic materials 0.000 description 13
- 229910001845 yogo sapphire Inorganic materials 0.000 description 13
- 230000008901 benefit Effects 0.000 description 9
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 238000012512 characterization method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
This application discloses a kind of LED growing methods for reducing epitaxial layer dislocation density, successively include: to sputter A1N film, InMgN layers of growth, the N-type GaN layer of growth doping Si, growth MQW luminescent layer, growing P-type AlGaN layer, growth P-type GaN layer, cooling down.InMgN layers of the growth, specifically: the Sapphire Substrate for having sputtered A1N film is put into MOCVD reaction chamber, temperature is increased to 700 DEG C -800 DEG C, the pressure of reaction chamber is maintained into 300mbar-400mbar, is passed through the H of 100L/min-130L/min2, 100L/min-120L/min NH3, 400sccm-600sccm TMIn, 1000sccm-3000sccm Cp2Mg, continued propagation is with a thickness of 5 μm -7 μm of InMgN layer.
Description
Technical field
This application involves LED epitaxial scheme applied technical fields, specifically, being related to a kind of reduction epitaxial layer dislocation density
LED growing method.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of solid state lighting, small in size, power consumption at present
Low long service life high brightness, environmental protection, it is sturdy and durable the advantages that by the majority of consumers approve, the scale of domestic production LED
Gradually expanding；Demand in the market to LED product performance is growing day by day, how to grow more high-quality epitaxial wafer and is always
The focal issue of LED industry, because of the raising of epitaxial layer crystal quality, the performance of LED component can be until being promoted, the longevity of LED
Life, ageing resistance, antistatic effect, stability can be promoted with the promotion of epitaxial layer crystal quality.
In sapphire Al in traditional epitaxy technology2O3Grown on substrates GaN material, because of Al2O3Material and GaN material
There is about 13% lattice mismatch, bring influence is that GaN material dislocation density is up to 109/cm2, dislocation is controlled at present
The main method of density is that one layer of thin GaN of low-temperature epitaxy makees buffer layer, and 3D growth and the 2D for then carrying out GaN on this basis are raw
It is long, eventually form relatively flat GaN layer.
Summary of the invention
In view of this, the technical problem to be solved by the application is to provide a kind of LED for reducing epitaxial layer dislocation density
Growing method, then grown using preferred growth AlN InMgN material two-step growth method replace original low temperature GaN, 3D GaN,
The three one-step growth technologies of 2D GaN, it is therefore an objective to reduce epitaxial layer dislocation density by using new material new process, improve epitaxial layer
Crystal quality promotes the photoelectric properties parameter such as the brightness of LED component, voltage, electric leakage, antistatic.
In order to solve the above-mentioned technical problem, the application has following technical solution:
It is a kind of reduce epitaxial layer dislocation density LED growing method, which is characterized in that successively include: sputtering A1N film,
InMgN layers of growth, the N-type GaN layer of growth doping Si, growth MQW luminescent layer, growing P-type AlGaN layer, growth P-type GaN layer, drop
Temperature is cooling,
The sputtering A1N film, specifically:
Using model iTop A230 DC magnetron reactive sputtering equipment by sapphire substrate temperature be heated to 600 DEG C-
900 DEG C, it is passed through the N of Ar, 80sccm-100sccm of 50sccm-70sccm2With the O of 2sccm-3sccm2, use 2000V-3000V
Inclined impacting with high pressure aluminium target, on sapphire substrate surface sputter with a thickness of 50nm-60nm A1N film；
InMgN layers of the growth, specifically:
The Sapphire Substrate for having sputtered A1N film is put into MOCVD reaction chamber, raising temperature, will be anti-to 700 DEG C -800 DEG C
It answers the pressure of chamber to maintain 300mbar-400mbar, is passed through the H of 100L/min-130L/min2, 100L/min-120L/min
NH3, 400sccm-600sccm TMIn, 1000sccm-3000sccm Cp2Mg, continued propagation is with a thickness of 5 μm -7 μm
InMgN layers.
Preferably, in which:
The N-type GaN layer of the growth doping Si, specifically:
1000 DEG C -1100 DEG C are increased the temperature to, reaction cavity pressure is maintained into 150mbar-300mbar, is passed through 50L/
The H of min-90L/min2, 40L/min-60L/min NH3, the source TMGa of 200sccm-300sccm, 20sccm-50sccm
SiH4Source, continued propagation with a thickness of 2 μm -4 μm doping Si N-type GaN, Si doping concentration 5E18atoms/cm3-
1E19atoms/cm3。
Preferably, in which:
The growth MQW luminescent layer, specifically:
Reaction cavity pressure 300mbar-400mbar, 700 DEG C -750 DEG C of temperature are kept, is passed through 50L/min-90L/min's
N2, 40L/min-60L/min NH3, the source TMGa of 10sccm-50sccm, 1000sccm-2000sccm the source TMIn, growth mixes
The In with a thickness of 3nm-4nm of miscellaneous InxGa(1-x)N layers, x=0.15-0.25, In doping concentration is 1E20atoms/cm3-
3E20atoms/cm3；
Then temperature is increased to 800 DEG C -850 DEG C, is passed through the N that flow is 50L/min-90L/min2、40L/min-60L/
The NH of min3, 10sccm-50sccm the source TMGa, growth thickness be 10nm-15nm GaN layer；
Repeat InxGa(1-x)The growth of N, the then repeatedly growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, control
Periodicity processed is 10-15.
Preferably, in which:
The growing P-type AlGaN layer, specifically:
850 DEG C -950 DEG C are increased the temperature to, reaction cavity pressure 200mbar-400mbar is kept, is passed through 50L/min-90L/
The N of min2, 40L/min-60L/min NH3, 50sccm-100sccm the source TMGa, the p-type of continued propagation 50nm-100nm
AlGaN layer, Al doping concentration 1E20atoms/cm3-3E20atoms/cm3, Mg doping concentration 5E18atoms/cm3-
1E19atoms/cm3。
Preferably, in which:
The growth P-type GaN layer, specifically:
950 DEG C -1000 DEG C are increased the temperature to, reaction cavity pressure 200mbar-600mbar is kept, is passed through 50L/min-90L/
The N of min2, 40L/min-60L/min NH3, 50sccm-100sccm TMGa, continued propagation is with a thickness of 100nm-300nm's
Mix the p-type GaN layer of Mg, Mg doping concentration 1E19atoms/cm3-1E20atoms/cm3。
Preferably, in which:
The cooling down, specifically:
700 DEG C -800 DEG C are cooled to, the N of 100L/min-150L/min is individually passed through2, 20min-30min is kept the temperature, then
Heating system is closed, closes and gives gas system, furnace cooling.
Compared with prior art, method described herein achieving the following effects:
The present invention reduce epitaxial layer dislocation density LED growing method, be compared with the traditional method, using new AlN,
InMgN material replaces original low temperature GaN, 2D GaN, 3D GaN material, obtains a kind of new material and growth technique, because
For AlN and sapphire substrate Al2O3Mismatch about 2%, GaN and sapphire substrate Al2O3Lattice mismatch 14%, using AlN and
Sapphire substrate Al2O3The small advantage of lattice mismatch, InMgN material and the small advantage of AlN, GaN lattice mismatch, pass through reduce it is brilliant
The dislocation that lattice mismatch generates reduces epitaxial layer dislocation density, epitaxial layer crystal quality is improved, so that LED product quality obtains
To promotion.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is the flow chart for the LED growing method that the present invention reduces epitaxial layer dislocation density；
Fig. 2 is the structural schematic diagram of LED epitaxial layer in the present invention；
Fig. 3 is the structural schematic diagram of LED epitaxial layer in comparative example；
Wherein, 1, substrate, 2, A1N layers, 3, InMgN layers, 4, high temperature N-type GaN layer, 5, luminescent layer, 5.1, InxGa(1-x)N
Layer, 5.2, GaN layer, 6, p-type AlGaN layer, 7, p-type GaN layer, 8, low temperature buffer layer GaN, 9,3D GaN, 10,2D GaN.
Specific embodiment
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer
It is understood that hardware manufacturer may call the same component with different nouns.This specification and claims are not with name
The difference of title is as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Such as logical
The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit
In "." substantially " refer within the acceptable error range, those skilled in the art can within a certain error range solve described in
Technical problem basically reaches the technical effect.In addition, " coupling " word includes any direct and indirect electric property coupling herein
Means.Therefore, if it is described herein that a first device is coupled to a second device, then representing the first device can directly electrical coupling
It is connected to the second device, or the second device indirectly electrically coupled through other devices or coupling means.Specification
Subsequent descriptions be implement the application better embodiment, so it is described description be for the purpose of the rule for illustrating the application,
It is not intended to limit the scope of the present application.The protection scope of the application is as defined by the appended claims.
Embodiment 1
The present invention grows high brightness GaN-based LED epitaxial wafer with MOCVD.Using high-purity H2Or high-purity N2Or high-purity H2With
High-purity N2Mixed gas as carrier gas, high-purity N H3As the source N, metal organic source trimethyl gallium (TMGa) is used as gallium source, front three
Base indium (TMIn) is used as indium source, and N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is used as silicon source, P-type dopant two
Luxuriant magnesium (CP2Mg), substrate is (001) surface sapphire, and reaction pressure is between 100mbar to 800mbar.Specific growth pattern is such as
Under:
It is a kind of reduce epitaxial layer dislocation density LED growing method, which is characterized in that successively include: sputtering A1N film,
InMgN layers of growth, the N-type GaN layer of growth doping Si, growth MQW luminescent layer, growing P-type AlGaN layer, growth P-type GaN layer, drop
Temperature is cooling,
The sputtering A1N film, specifically:
Using model iTop A230 DC magnetron reactive sputtering equipment by sapphire substrate temperature be heated to 600 DEG C-
900 DEG C, it is passed through the N of Ar, 80sccm-100sccm of 50sccm-70sccm2With the O of 2sccm-3sccm2, use 2000V-3000V
Inclined impacting with high pressure aluminium target, on sapphire substrate surface sputter with a thickness of 50nm-60nm A1N film；
InMgN layers of the growth, specifically:
The Sapphire Substrate for having sputtered A1N film is put into MOCVD reaction chamber, raising temperature, will be anti-to 700 DEG C -800 DEG C
It answers the pressure of chamber to maintain 300mbar-400mbar, is passed through the H of 100L/min-130L/min2, 100L/min-120L/min
NH3, 400sccm-600sccm TMIn, 1000sccm-3000sccm Cp2Mg, continued propagation is with a thickness of 5 μm -7 μm
InMgN layers.
The present invention reduces the LED growing method of epitaxial layer dislocation density, is compared with the traditional method, by Sapphire Substrate
Upper sputtering A1N film simultaneously has InMgN the layer of Grown on Sapphire Substrates of A1N film in sputtering, using new A1N film with
InMgN material replaces traditional low temperature GaN, 2D GaN and 3D GaN material, obtains a kind of new material and growth technique.Cause
For AlN and sapphire substrate Al2O3Mismatch about 2%, GaN and sapphire substrate Al2O3Lattice mismatch 14%, using AlN and
Sapphire substrate Al2O3The small advantage of lattice mismatch, InMgN material and the small advantage of AlN, GaN lattice mismatch, pass through reduce it is brilliant
The dislocation that lattice mismatch generates reduces epitaxial layer dislocation density, epitaxial layer crystal quality is improved, so that LED product quality obtains
To promotion.
Embodiment 2
The Application Example of the LED growing method of reduction epitaxial layer dislocation density of the invention presented below, epitaxy junction
Referring to fig. 2, growing method is referring to Fig. 1 for structure.High brightness GaN-based LED epitaxial wafer is grown with MOCVD.Using high-purity H2Or it is high
Pure N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As the source N, metal organic source trimethyl gallium (TMGa)
As gallium source, trimethyl indium (TMIn) is used as indium source, and N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is used as silicon source,
P-type dopant is two luxuriant magnesium (CP2Mg), substrate is (0001) surface sapphire, and reaction pressure is between 100mbar to 800mbar.
Specific growth pattern is as follows:
Step 101, sputtering A1N film:
Using model iTop A230 DC magnetron reactive sputtering equipment by sapphire substrate temperature be heated to 600 DEG C-
900 DEG C or so, such as 650 DEG C, it is passed through the N of Ar, 80sccm-100sccm of 50sccm-70sccm2With the O of 2sccm-3sccm2,
With the inclined impacting with high pressure aluminium target of 2000V-3000V, the A1N film with a thickness of 50nm-60nm is sputtered on sapphire substrate surface.
Step 102, InMgN layers of growth:
The Sapphire Substrate for having sputtered A1N film is put into MOCVD reaction chamber, raising temperature, will be anti-to 700 DEG C -800 DEG C
It answers the pressure of chamber to maintain 300mbar-400mbar, is passed through the H of 100L/min-130L/min2, 100L/min-120L/min
NH3, 400sccm-600sccm TMIn, 1000sccm-3000sccm Cp2Mg, continued propagation is with a thickness of 5 μm -7 μm
InMgN layers.
The N-type GaN layer of step 103, growth doping Si:
1000 DEG C -1100 DEG C are increased the temperature to, reaction cavity pressure is maintained into 150mbar-300mbar, is passed through 50L/
The H of min-90L/min2, 40L/min-60L/min NH3, the source TMGa of 200sccm-300sccm, 20sccm-50sccm
SiH4Source, continued propagation with a thickness of 2 μm -4 μm doping Si N-type GaN, Si doping concentration 5E18atoms/cm3-
1E19atoms/cm3。
Step 104, growth MQW luminescent layer:
Reaction cavity pressure 300mbar-400mbar, 700 DEG C -750 DEG C of temperature are kept, being passed through flow is 50L/min-90L/
The N of min2, 40L/min-60L/min NH3, the source TMGa of 10sccm-50sccm, 1000sccm-2000sccm the source TMIn,
The In with a thickness of 3nm-4nm of growth doping InxGa(1-x)N layers, x=0.15-0.25, In doping concentration is 1E20atoms/
cm3-3E20atoms/cm3；
Then temperature is increased to 800 DEG C -850 DEG C, is passed through the N that flow is 50L/min-90L/min2、40L/min-60L/
The NH of min3, 10sccm-50sccm the source TMGa, growth thickness be 10nm-15nm GaN layer；
Repeat InxGa(1-x)The growth of N, the then repeatedly growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, control
Periodicity processed is 10-15.
In the application, 3E20 represents 3 multiplied by 10 20 powers, that is, 3*1020, and so on, atoms/cm3For doping
Concentration unit, similarly hereinafter.
Step 105, growing P-type AlGaN layer:
850 DEG C -950 DEG C are increased the temperature to, reaction cavity pressure 200mbar-400mbar is kept, is passed through 50L/min-90L/
The N of min2, 40L/min-60L/min NH3, 50sccm-100sccm the source TMGa, the p-type of continued propagation 50nm-100nm
AlGaN layer, Al doping concentration 1E20atoms/cm3-3E20atoms/cm3, Mg doping concentration 5E18atoms/cm3-
1E19atoms/cm3。
Step 106, growth P-type GaN layer:
950 DEG C -1000 DEG C are increased the temperature to, reaction cavity pressure 200mbar-600mbar is kept, is passed through 50L/min-90L/
The N of min2, 40L/min-60L/min NH3, 50sccm-100sccm TMGa, continued propagation is with a thickness of 100nm-300nm's
Mix the p-type GaN layer of Mg, Mg doping concentration 1E19atoms/cm3-1E20atoms/cm3。
Step 107, cooling down:
700 DEG C -800 DEG C are cooled to, the N of 100L/min-150L/min is individually passed through2, 20min-30min is kept the temperature, then
Heating system is closed, closes and gives gas system, furnace cooling.
The application is reduced in the LED growing method of epitaxial layer dislocation density, by step 101, in sapphire substrate surface
One layer of A1N film of upper sputtering, then by step 102, at one layer InMgN layers of the Grown on Sapphire Substrates for having sputtered A1N film,
Utilize new A1N film and InMgN layers of GaN, 2D GaN and 3D GaN replaced in conventional method.Due to AlN and process for sapphire-based
Plate Al2O3Mismatch about 2%, GaN and sapphire substrate Al2O3Lattice mismatch 14%, the application utilize AlN and process for sapphire-based
Plate Al2O3The small advantage of lattice mismatch, InMgN material and the small advantage of AlN, GaN lattice mismatch pass through and reduce lattice mismatch and produce
Raw dislocation reduces epitaxial layer dislocation density, so that LED product quality gets a promotion.
Embodiment 3
A kind of routine LED growing method presented below is as comparative example of the invention.
The growing method of conventional LED extension is (epitaxial layer structure is referring to Fig. 3):
1, in 900 DEG C -1100 DEG C of H2Under atmosphere, it is passed through the H of 50L/min-100L/min2, keep reaction cavity pressure
100mbar-200mbar, high-temperature process Sapphire Substrate 5min-10min.
2, temperature is reduced to 500 DEG C -650 DEG C, is kept reaction cavity pressure 300mbar-600mbar, is passed through 50L/min-
The H of 90L/min2、40L/min-60L/min NH3, 50sccm-100sccm the source TMGa, growth thickness on a sapphire substrate
For the low temperature buffer layer GaN of 30nm-60nm.
3,850 DEG C -1000 DEG C are increased the temperature to, reaction cavity pressure 300mbar-600mbar is kept, is passed through 50L/min-
The H of 90L/min2, 40L/min-60L/min NH3, 200sccm-300sccm TMGa, 1 μm -2 μm of continued propagation of 3D GaN
Layer.
4,1000 DEG C -1100 DEG C are increased the temperature to, reaction cavity pressure maintains 300mbar-600mbar, is passed through 50L/
The H of min-90L/min2, 40L/min-60L/min NH3, 300sccm-400sccm the source TMGa, 2 μm -3 μm of continued propagation
2D GaN layer.
5, keeping temperature is 1000 DEG C -1100 DEG C, and reaction cavity pressure maintains 150mbar-300mbar, it is passed through 50L/
The H of min-90L/min2, 40L/min-60L/min NH3, the source TMGa of 200sccm-300sccm, 20sccm-50sccm
SiH4, N-type GaN, the Si doping concentration 5E18atoms/cm of continued propagation doping Si3-1E19atoms/cm3, overall thickness, which controls, to exist
2μm-4μm。
6, cyclical growth MQW luminescent layer, reaction cavity pressure maintain 300mbar-400mbar, and temperature is controlled 700
DEG C -750 DEG C, it is passed through the TMGa of the nitrogen of 50L/min-90L/min, the ammonia of 40L/min-60L/min, 10sccm-50sccm
Source, 1000sccm-2000sccm the source TMIn, growth doping In 3nm-4nm InxGa(1-x)N (x=0.15-0.25) layer, In
Doping concentration 1E+20atoms/cm3-3E+20atoms/cm3, 800 DEG C -850 DEG C are then warming up to, 50L/min-90L/ is passed through
The source TMGa of the nitrogen of min, the ammonia of 40L/min-60L/min, 10sccm-50sccm, grows the GaN layer of 10nm-15nm, connects
InxGa(1-x)N and GaN alternating growth in this way, periodicity 10-15.
7,850 DEG C -950 DEG C are increased the temperature to, reaction cavity pressure 200mbar-400mbar is kept, is passed through 50L/min-
The N of 90L/min2, 40L/min-60L/min NH3, 50sccm-100sccm the source TMGa, continued propagation is with a thickness of 50nm-
The p-type AlGaN layer of 100nm, Al doping concentration 1E20atoms/cm3-3E20atoms/cm3, Mg doping concentration 5E18atoms/
cm3-1E19atoms/cm3。
8, temperature is increased again to 950 DEG C -1000 DEG C, is kept reaction cavity pressure 200mbar-600mbar, is passed through 50L/min-
The N of 90L/min2, 40L/min-60L/min NH3, 50sccm-100sccm the source TMGa, continued propagation 100nm-300nm's
Mix the p-type GaN layer of Mg, Mg doping concentration 1E19atoms/cm3-1E20atoms/cm3。
9,700 DEG C -800 DEG C are cooled to, the N of 100L/min-150L/min is individually passed through2, 20min-30min is kept the temperature, is connect
Closing heating system, close give gas system, furnace cooling.
On same board, 4 samples 1, root are prepared according to the growing method (method of comparative example) of conventional LED
4 samples 2 are prepared according to the method for this patent description.It is taken out after the completion of growth and tests the face epitaxial wafer XRD102 under the same conditions
(please referring to table 1).
Sample 1 and sample 2 plate about 1500 angstroms of ITO layer under identical preceding process conditions, plate Cr/Pt/ under the same conditions
About 2500 angstroms of Au electrode, plating SiO under the same conditions2About 500 angstroms, then sample grinding is cut at identical conditions
It is cut into 762 μm * 762 μm (30mil*30mil) of chip particle, then sample 1 and sample 2 respectively select 100 in same position
Crystal grain is packaged into white light LEDs, and carry out following test under identical packaging technology:
(1) photoelectric properties are tested: on same LED point measurement machine, 1 He of test sample under the conditions of driving current 350mA
The photoelectric properties of sample 2.
(2) antistatic effect: on same LED point measurement machine, to sample be respectively adopted 2KV, 4KV, 6KV, 8KV pulse into
The antistatic test of row, referring to table 2 and table 3.
Table 1 is sample 1 and sample 2XRD test data, and table 2 is the LED test machine photoelectricity test number of sample 1 and sample 2
According to table 3 is the antistatic yield test data of LED test machine of sample 2 and sample 2.
2 extension XRD test data of 1 sample 1 of table and sample
2 sample 1 of table and sample 2LED test machine opto-electronic test data
3 sample 1 of table and the antistatic yield test data of sample 2LED test machine
By the analysis to table 1, table 2 and table 3, can be concluded that
(1) display of table 1 is become smaller using the face the sample XRD102 numerical value of the application method production, and characterization uses the application method
The sample epitaxial layer crystal quality of production is more excellent, hence it is evident that improves.
(2) display of table 2 is more preferable using the sample LED light electrical property of present techniques production, and brightness is high, voltage is low, electric leakage
Small, this has benefited from the art of this patent and reduces epitaxial layer dislocation, improves epitaxial crystal quality.
(3) display of table 3 is preferable using the sample LED antistatic effect of present patent application technology production, with the increasing of voltage
Add, though antistatic effect has decline amplitude to become smaller, it was demonstrated that had using the sample antistatic effect that present patent application technology makes
It is promoted.
As can be seen from the above embodiments beneficial effect existing for the application is:
The present invention reduces the LED growing method of epitaxial layer dislocation density, is compared with the traditional method, by Sapphire Substrate
Upper sputtering A1N film simultaneously has InMgN the layer of Grown on Sapphire Substrates of A1N film in sputtering, using new A1N film with
InMgN material replaces traditional low temperature GaN, 2D GaN and 3D GaN material, obtains a kind of new material and growth technique.Cause
For AlN and sapphire substrate Al2O3Mismatch about 2%, GaN and sapphire substrate Al2O3Lattice mismatch 14%, using AlN and
Sapphire substrate Al2O3The small advantage of lattice mismatch, InMgN material and the small advantage of AlN, GaN lattice mismatch, pass through reduce it is brilliant
The dislocation that lattice mismatch generates reduces epitaxial layer dislocation density, and then promotes LED product quality.
It should be understood by those skilled in the art that, embodiments herein can provide as method, apparatus or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application
Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations,
Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through within that scope of the inventive concept describe herein
It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen
It please be in the protection scope of appended claims.
Claims (5)
1. a kind of LED growing method for reducing epitaxial layer dislocation density, which is characterized in that successively include: sputtering A1N film, life
InMgN layers long, growth doping Si N-type GaN layer, growth MQW luminescent layer, growing P-type AlGaN layer, growth P-type GaN layer, cooling
It is cooling,
The sputtering A1N film, specifically:
Sapphire substrate temperature is heated to 600 DEG C -900 using the DC magnetron reactive sputtering equipment of model iTop A230
DEG C, it is passed through the N of Ar, 80sccm-100sccm of 50sccm-70sccm2With the O of 2sccm-3sccm2, inclined with 2000V-3000V
Impacting with high pressure aluminium target sputters the A1N film with a thickness of 50nm-60nm on sapphire substrate surface；
InMgN layers of the growth, specifically:
The Sapphire Substrate for having sputtered A1N film is put into MOCVD reaction chamber, increases temperature to 700 DEG C -800 DEG C, by reaction chamber
Pressure maintain 300mbar-400mbar, be passed through the H of 100L/min-130L/min2, 100L/min-120L/min NH3、
The Cp of TMIn, 1000sccm-3000sccm of 400sccm-600sccm2Mg, continued propagation is on the A1N film with a thickness of 5
μm -7 μm of InMgN layer makes described InMgN layers to be located between the A1N film and the N-type GaN layer of the doping Si, and makes institute
It states A1N film and described InMgN layers collectively forms combination film layer；
The N-type GaN layer of the growth doping Si, specifically:
1000 DEG C -1100 DEG C are increased the temperature to, reaction cavity pressure is maintained into 150mbar-300mbar, is passed through 50L/min-
The H of 90L/min2, 40L/min-60L/min NH3, the source TMGa of 200sccm-300sccm, 20sccm-50sccm SiH4
Source, continued propagation with a thickness of 2 μm -4 μm doping Si N-type GaN, Si doping concentration 5E18atoms/cm3-1E19atoms/
cm3。
2. reducing the LED growing method of epitaxial layer dislocation density according to claim 1, which is characterized in that
The growth MQW luminescent layer, specifically:
Reaction cavity pressure 300mbar-400mbar, 700 DEG C -750 DEG C of temperature are kept, the N of 50L/min-90L/min is passed through2、40L/
The NH of min-60L/min3, the source TMGa of 10sccm-50sccm, 1000sccm-2000sccm the source TMIn, growth doping In's
With a thickness of the In of 3nm-4nmxGa(1-x)N layers, x=0.15-0.25, In doping concentration is 1E20atoms/cm3-3E20atoms/
cm3；
Then temperature is increased to 800 DEG C -850 DEG C, is passed through the N that flow is 50L/min-90L/min2, 40L/min-60L/min
NH3, 10sccm-50sccm the source TMGa, growth thickness be 10nm-15nm GaN layer；
Repeat InxGa(1-x)The growth of N, the then repeatedly growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, control week
Issue is 10-15.
3. reducing the LED growing method of epitaxial layer dislocation density according to claim 1, which is characterized in that
The growing P-type AlGaN layer, specifically:
850 DEG C -950 DEG C are increased the temperature to, reaction cavity pressure 200mbar-400mbar is kept, is passed through 50L/min-90L/min's
N2, 40L/min-60L/min NH3, 50sccm-100sccm the source TMGa, the p-type AlGaN layer of continued propagation 50nm-100nm,
Al doping concentration 1E20atoms/cm3-3E20atoms/cm3, Mg doping concentration 5E18atoms/cm3-1E19atoms/cm3。
4. reducing the LED growing method of epitaxial layer dislocation density according to claim 1, which is characterized in that
The growth P-type GaN layer, specifically:
950 DEG C -1000 DEG C are increased the temperature to, reaction cavity pressure 200mbar-600mbar is kept, is passed through 50L/min-90L/min
N2, 40L/min-60L/min NH3, 50sccm-100sccm TMGa, continued propagation mixes Mg with a thickness of 100nm-300nm's
P-type GaN layer, Mg doping concentration 1E19atoms/cm3-1E20atoms/cm3。
5. reducing the LED growing method of epitaxial layer dislocation density according to claim 1, which is characterized in that
The cooling down, specifically:
700 DEG C -800 DEG C are cooled to, the N of 100L/min-150L/min is individually passed through2, 20min-30min is kept the temperature, is then switched off and adds
Gas system, furnace cooling are given in hot systems, closing.
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| CN105244424A (en) * | 2015-11-03 | 2016-01-13 | 湘能华磊光电股份有限公司 | Epitaxial growth method for improving luminous efficiency of LED (Light Emitting Diode) device |
| CN105296948A (en) * | 2015-11-03 | 2016-02-03 | 湘能华磊光电股份有限公司 | Epitaxial growth method capable of improving photoelectric properties of GaN-based LED |
| CN105789388A (en) * | 2016-04-25 | 2016-07-20 | 湘能华磊光电股份有限公司 | LED growth method capable of improving quality of epitaxial crystal |
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| CN105244424A (en) * | 2015-11-03 | 2016-01-13 | 湘能华磊光电股份有限公司 | Epitaxial growth method for improving luminous efficiency of LED (Light Emitting Diode) device |
| CN105296948A (en) * | 2015-11-03 | 2016-02-03 | 湘能华磊光电股份有限公司 | Epitaxial growth method capable of improving photoelectric properties of GaN-based LED |
| CN105789388A (en) * | 2016-04-25 | 2016-07-20 | 湘能华磊光电股份有限公司 | LED growth method capable of improving quality of epitaxial crystal |
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