CN106129193A - LED and the growing method thereof of light efficiency can be improved - Google Patents

LED and the growing method thereof of light efficiency can be improved Download PDF

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CN106129193A
CN106129193A CN201610580873.3A CN201610580873A CN106129193A CN 106129193 A CN106129193 A CN 106129193A CN 201610580873 A CN201610580873 A CN 201610580873A CN 106129193 A CN106129193 A CN 106129193A
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gan
layer
growth
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temperature
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林传强
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Xiangneng Hualei Optoelectrical Co Ltd
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Xiangneng Hualei Optoelectrical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention provides a kind of LED growing method improving light efficiency, including the step such as growing low temperature GaN nucleating layer, growth high temperature GaN cushion, growth N-type GaN layer, growth multicycle mqw light emitting layer, growth GaN:Mg layer group, growth P-type GaN contact layer；GaN:Mg layer group includes 1 80 GaN:Mg monolayers, and GaN:Mg monolayer includes the 2nd GaN:Mg layer grown under the GaN:Mg layer grown under cryogenic conditions and hot conditions.The present invention also provides for the LED of a kind of improved light efficiency using said method to obtain.Traditional p-type GaN layer is designed as the GaN:Mg layer group of high and low temperature alternative growth by the present invention, pass through low-temperature epitaxy, improve Mg concentration, relatively multi-hole is provided, further through high growth temperature, improve the crystalline quality of material, improve hole mobility, reduce the running voltage of LED chip, improve the luminous efficiency of LED chip.

Description

LED and the growing method thereof of light efficiency can be improved
Technical field
The present invention relates to LED field, be specifically related to a kind of LED improving light efficiency and growing method thereof.
Background technology
At present, market is more and more higher to the requirement of LED product, particularly as follows: require that LED chip driving voltage is low, particularly Under big electric current, driving voltage is the lowest more good, light efficiency is the highest more good；LED market value be presented as (light efficiency)/(unit price), light efficiency is more Good, the highest to dutiable value, therefore specular removal is always the target that LED producer, colleges and universities and scientific research institutions are pursued.Specular removal means Luminous power is high, driving voltage is low, but luminous power is limited by P layer hole concentration to a certain extent, and driving voltage is to a certain degree On limited by P layer hole mobility, injected holes concentration increases, and the combined efficiency of luminescent layer hole and electronics increases, High luminous power increases, and P layer hole mobility increases driving voltage and could reduce.
A kind of tradition LED epitaxial structure presented below, refers to Fig. 1, its growing method specifically:
The first step, Sapphire Substrate 1 being annealed in hydrogen atmosphere, clean substrate surface, temperature is 1050-1150 ℃；
Drop to 500-620 DEG C at a temperature of second step, general, be passed through NH3And TMGa, growth thickness is the low temperature GaN of 20-40nm Nucleating layer 2, growth pressure is 400-650Torr, and V/III mol ratio is 500-3000；
After the growth of 3rd step, low temperature GaN nucleating layer 2 terminates, stop being passed through TMGa, carry out in-situ annealing process, annealing temperature Degree is increased to 1000-1100 DEG C, and annealing time is 5-10min；After annealing, temperature is regulated to 900-1050 DEG C, continue logical Entering TMGa, epitaxial growth thickness is the high temperature GaN cushion 3 between 0.2-1um, and growth pressure is 400-650Torr, and V/III rubs That ratio is 500-3000；
After the growth of 4th step, high temperature GaN cushion 3 terminates, it is passed through NH3And TMGa, growth thickness is the undoped of 1-3um U-shaped GaN layer 4, growth temperature is 1050-1200 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 300- 3000；
After 5th step, U-shaped GaN layer 4 growth of undoped terminate, it is passed through NH3, TMGa and SiH4, growth thickness is 2-4um N-type GaN layer 5, growth temperature is 1050-1200 DEG C, and growth pressure is 100-600Torr, and V/III mol ratio is 300- 3000, Si doping contents are 8E18-2E19atom/cm3；
After 6th step, N-type GaN layer 5 have grown, grow multicycle mqw light emitting layer 6, MO source used be TMIn, TEGa, N type dopant is silane；Multicycle mqw light emitting layer 6 is by the In in 5-15 cycleyGa1-yN/GaN trap builds structure group Become, wherein SQW InyGa1-yThe thickness of N shell is 2-5nm, y=0.1-0.3, and growth temperature is 700-800 DEG C, growth pressure For 100-500Torr, V/III mol ratio is 300-5000；Wherein the thickness of GaN barrier layer is 8-15nm, and growth temperature is 800- 950 DEG C, growth pressure is 100-500Torr, V/III mol ratio be 300-5000, Si component molar proportioning be 0.5%-3%；
After the growth of 7th step, multicycle mqw light emitting layer 6 terminates, growth thickness is the p-type AlGaN layer 7 of 50-200nm, MO source used is TMAl, TMGa and Cp2Mg；Growth temperature is 900-1100 DEG C, and growth time is 3-10min, and pressure is at 20- 200Torr, V/III mol ratio be the molar constituent that molar constituent is 10%-30%, Mg of 1000-20000, Al be 0.05%- 0.3%；
After the growth of 8th step, p-type AlGaN layer 7 terminates, growing high temperature p-type GaN layer 8, MO source used is TMGa and Cp2Mg； Growth thickness is 50-800nm, and growth temperature is 850-1000 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, Mg doping content is 1E18-1E20atom/cm3；
After the growth of 9th step, high temperature p-type GaN layer 8 terminates, growth thickness is the p-type GaN contact layer 9 of 5-20nm, MO used Source is TMGa and Cp2Mg；Growth temperature is 850-1050 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 1000- 5000；
After tenth step, epitaxial growth terminate, the temperature of reative cell is down to 650-800 DEG C, uses pure nitrogen gas atmosphere to carry out Annealing 5-10min, is then down to room temperature, terminates growth.
Epitaxial structure makes single small size core through Subsequent semiconductor processing technique such as over cleaning, deposition, photoetching and etchings Sheet.
Summary of the invention
The present invention provides the LED growing method of a kind of improved light efficiency that luminous power is big, driving voltage is low, tool Body scheme is as follows:
A kind of LED growing method improving light efficiency, includes Sapphire Substrate annealing, growing low temperature successively GaN nucleating layer, growth high temperature GaN cushion, the U-shaped GaN layer of growth undoped, growth N-type GaN layer, growth multicycle quantum Trap luminescent layer, growing P-type AlGaN layer, growth GaN:Mg layer group, growth P-type GaN contact layer and cooling annealing；
The thickness of described GaN:Mg layer group is 50-800nm, and it includes 1-80 GaN:Mg monolayer of cyclical growth；Institute State GaN:Mg monolayer and include a GaN:Mg layer and the 2nd GaN:Mg layer, the growth course of described GaN:Mg monolayer specifically: control Temperature processed is 750 DEG C-850 DEG C, is passed through TMGa and Cp2Mg, growth thickness is a GaN:Mg layer of 5-50nm；It is warming up to 850 DEG C-1000 DEG C, growth thickness is the 2nd GaN:Mg layer of 5-50nm.
In above technical scheme preferably, Sapphire Substrate annealing is particularly as follows: by Sapphire Substrate at hydrogen atmosphere In anneal, clean substrate surface, temperature is 1050-1150 DEG C；
Growing low temperature GaN nucleating layer, particularly as follows: drop to 500-620 DEG C at a temperature of Jiang, is passed through NH3And TMGa, growth thickness For the low temperature GaN nucleating layer of 20-40nm, growth pressure is 400-650Torr, and V/III mol ratio is 500-3000.
In above technical scheme preferably, grow high temperature GaN cushion particularly as follows: low temperature GaN nucleating layer grows after terminating, Stopping being passed through TMGa, carry out in-situ annealing process, annealing temperature is increased to 1000-1100 DEG C, and annealing time is 5-10min；Move back After fire, regulating temperature to 900-1050 DEG C, continue to be passed through TMGa, epitaxial growth thickness is the high temperature GaN buffering of 0.2-1um Layer, growth pressure is 400-650Torr, and V/III mol ratio is 500-3000.
In above technical scheme preferably, the U-shaped GaN layer of growth undoped is particularly as follows: high temperature GaN buffer growth terminates After, it is passed through NH3With the U-shaped GaN layer of the undoped that TMGa growth thickness is 1-3um, growth temperature is 1050-1200 DEG C, growth Pressure is 100-500Torr, and V/III mol ratio is 300-3000.
In above technical scheme preferably, growth N-type GaN layer is particularly as follows: the U-shaped GaN layer of undoped grows after terminating, logical Enter NH3, TMGa and SiH4, growth thickness is the N-type GaN layer of 2-4um, and growth temperature is 1050-1200 DEG C, and growth pressure is 100-600Torr, V/III mol ratio be 300-3000, Si doping content be 8E18-2E19atom/cm3。
In above technical scheme preferably, growth multicycle mqw light emitting layer is particularly as follows: after N-type GaN layer grown Growth multicycle mqw light emitting layer, MO source used is TMIn, TEGa, and N type dopant is silane；Multicycle mqw light emitting layer By the In in 5-15 cycleyGa1-yN/GaN trap builds structure composition, wherein SQW InyGa1-yThe thickness of N shell is 2-5nm, y= 0.1-0.3, growth temperature is 700-800 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000；Wherein The thickness of GaN barrier layer is 8-15nm, and growth temperature is 800-950 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, Si component molar proportioning is 0.5%-3%.
In above technical scheme preferably, growing P-type AlGaN layer is particularly as follows: the growth of multicycle mqw light emitting layer terminates After, growth thickness is the p-type AlGaN layer of 50-200nm, and MO source used is TMAl, TMGa and Cp2Mg；Growth temperature is 900- 1100 DEG C, growth time is 3-10min, and pressure is at 20-200Torr, and V/III mol ratio is mole group of 1000-20000, Al The molar constituent being divided into 10%-30%, Mg is 0.05%-0.3%.
In above technical scheme preferably, growth P-type GaN contact layer particularly as follows: after GaN:Mg layer group growth terminate, growth Thickness is the p-type GaN contact layer of 5-20nm, and MO source used is TMGa and Cp2Mg；Growth temperature is 850-1050 DEG C, growth pressure Power is 100-500Torr, and V/III mol ratio is 1000-5000；
Cooling annealing is particularly as follows: after epitaxial growth terminates, be down to 650-800 DEG C by the temperature of reative cell, use pure Nitrogen atmosphere carries out making annealing treatment 5-10min, is then down to room temperature, terminates growth.
The present invention also provides for the LED of a kind of improved light efficiency using said method to prepare, including from the bottom up The Sapphire Substrate that stacks gradually, low temperature GaN nucleating layer, high temperature GaN cushion, the U-shaped GaN layer of undoped, N-type GaN layer, many Cycle mqw light emitting layer, p-type AlGaN layer, GaN:Mg layer group and p-type GaN contact layer；
The thickness of described GaN:Mg layer group is 50-800nm, and it includes 1-80 GaN:Mg monolayer；Described GaN:Mg monolayer Including a GaN:Mg layer and the 2nd GaN:Mg layer.
In above technical scheme preferably, the thickness of described low temperature GaN nucleating layer is 20-40nm；
The thickness of described high temperature GaN cushion is 0.2-1um；
The thickness of the U-shaped GaN layer of described undoped is 1-3um；
The thickness of described N-type GaN layer is 2-4um；
Described multicycle mqw light emitting layer is by the In in 5-15 cycleyGa1-yN/GaN trap builds the structure of composition, single InyGa1-yN/GaN trap is built and is included the In that thickness is 2-5nmyGa1-yN shell and the GaN barrier layer that thickness is 8-15nm, wherein y=0.1- 0.3；
The thickness of described p-type AlGaN layer is 50-200nm；
The thickness of described p-type GaN contact layer is 5-20nm.
The technical scheme that the present invention provides has the advantages that
1, whole technological process is simplified, and technological parameter is easily controlled, and is suitable for industrialized production.
2, traditional p-type GaN layer is designed as GaN:Mg layer group by the present invention, and GaN:Mg layer group includes the friendship that high/low temperature grows For Rotating fields (specifically: it is raw that GaN:Mg layer group includes that 1-80 GaN:Mg monolayer, described GaN:Mg monolayer include under cryogenic conditions 2nd GaN:Mg layer of growth under a long GaN:Mg layer and hot conditions), by low-temperature epitaxy, improve Mg concentration, it is provided that Relatively multi-hole, further through high growth temperature, is improved material crystalline quality, improves hole mobility, grown by alternate cycle, finally Improve the hole Injection Level of quantum well region, add the combined efficiency in hole and electronics, reduce the work electricity of LED chip Pressure, improves the luminous efficiency of LED chip.
In addition to objects, features and advantages described above, the present invention also has other objects, features and advantages. Below with reference to accompanying drawings, the present invention is further detailed explanation.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in embodiment being described below required for make Accompanying drawing be briefly described, it should be apparent that, drawings discussed below is only some embodiments of the present invention, for this From the point of view of the those of ordinary skill of field, on the premise of not paying creative work, it is also possible to obtain other according to these accompanying drawings Accompanying drawing, wherein:
Fig. 1 is the structural representation of LED of the prior art；
Fig. 2 is the structural representation of the LED that can improve light efficiency in the embodiment of the present invention 1；
Fig. 3 is the luminance contrast figure of sample 1 and sample 2；
Fig. 4 is the voltage-contrast figure of sample 1 and sample 2；
In figure: 1, Sapphire Substrate, 2, low temperature GaN nucleating layer, 3, high temperature GaN cushion, 4, the U-shaped GaN layer of undoped, 5, N-type GaN layer, 6, multicycle mqw light emitting layer, 7, p-type AlGaN layer, 8, high temperature p-type GaN layer, 8 ', GaN:Mg layer group, 8.1 ', GaN:Mg monolayer, 9, p-type GaN contact layer.
Detailed description of the invention
Below in conjunction with the accompanying drawing of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete description, aobvious So, described embodiment is only a part of embodiment of the present invention rather than whole embodiments.
Embodiment 1:
Referring to Fig. 2, the technical program uses long high brightness GaN-based LED in Wei Yike (VEECO) MOCVD next life. Use high-purity H2, high-purity N2Or high-purity H2And high-purity N2The mixed gas of (purity >=99.999%) is as carrier gas, high-purity N H3(pure Degree >=99.999%) as N source, metal organic source trimethyl gallium (TMGa), metal organic source triethyl-gallium (TEGa), trimethyl Indium (TMIn) is as indium source, and trimethyl aluminium (TMAl) is as aluminum source, and N type dopant is silane (SiH4), P-type dopant is two cyclopentadienyls Magnesium (Cp2Mg), substrate is Sapphire Substrate, and reaction pressure is between 100Torr to 1000Torr.
Sapphire Substrate 1, low temperature GaN nucleating layer that the LED of light efficiency includes stacking gradually from the bottom up can be improved 2, high temperature GaN cushion 3, the U-shaped GaN layer 4 of undoped, N-type GaN layer 5, multicycle mqw light emitting layer 6, p-type AlGaN layer 7, GaN:Mg layer group 8 ' and p-type GaN contact layer 9, the thickness of described GaN:Mg layer group 8 ' is 50-800nm, and it includes 1-80 GaN:Mg monolayer 8.1 '；Described GaN:Mg monolayer 8.1 ' includes a GaN:Mg layer and the 2nd GaN:Mg layer.
The thickness of described low temperature GaN nucleating layer 2 is 20-40nm；The thickness of described high temperature GaN cushion 3 is 0.2-1um； The thickness of the U-shaped GaN layer 4 of described undoped is 1-3um；The thickness of described N-type GaN layer 5 is 2-4um；Described multicycle quantum Trap luminescent layer 6 is by the In in 5-15 cycleyGa1-yN/GaN trap builds the structure of composition, single InyGa1-yN/GaN trap is built and is included thickness Degree is the In of 2-5nmyGa1-yN shell and the GaN barrier layer that thickness is 8-15nm, wherein y=0.1-0.3；Described p-type AlGaN layer 7 Thickness is 50-200nm；The thickness of described p-type GaN contact layer 9 is 5-20nm.
Its growing method specifically includes following steps:
Step one, Sapphire Substrate 1 make annealing treatment, particularly as follows: Sapphire Substrate 1 is annealed in hydrogen atmosphere, Cleaning substrate surface, temperature is 1050-1150 DEG C；
Step 2, growing low temperature GaN nucleating layer 2, particularly as follows: drop to 500-620 DEG C at a temperature of Jiang, be passed through NH3And TMGa, Growth thickness is the low temperature GaN nucleating layer 2 of 20-40nm, and growth pressure is 400-650Torr, and V/III mol ratio is 500- 3000；
Step 3, growth high temperature GaN cushion 3, particularly as follows: after the growth of low temperature GaN nucleating layer 2 terminates, stop being passed through TMGa, carries out in-situ annealing process, and annealing temperature is increased to 1000-1100 DEG C, and annealing time is 5-10min；After annealing, will Temperature regulates to 900-1050 DEG C, continues to be passed through TMGa, and epitaxial growth thickness is the high temperature GaN cushion 3 of 0.2-1um, growth Pressure is 400-650Torr, and V/III mol ratio is 500-3000；
Step 4, the U-shaped GaN layer 4 of growth undoped, particularly as follows: after the growth of high temperature GaN cushion 3 terminates, be passed through NH3 With the U-shaped GaN layer 4 of the undoped that TMGa growth thickness is 1-3um, growth temperature is 1050-1200 DEG C, and growth pressure is 100- 500Torr, V/III mol ratio is 300-3000.
Step 5, growth N-type GaN layer 5, particularly as follows: after U-shaped GaN layer 4 growth of undoped terminates, be passed through NH3、TMGa And SiH4, growth thickness is the N-type GaN layer 5 of 2-4um, and growth temperature is 1050-1200 DEG C, and growth pressure is 100- 600Torr, V/III mol ratio be 300-3000, Si doping content be 8E18-2E19atom/cm3；
Step 6, growth multicycle mqw light emitting layer 6, particularly as follows: N-type GaN layer 5 grows multicycle amount after having grown Sub-trap luminescent layer 6, MO source used is TMIn, TEGa, and N type dopant is silane；Multicycle mqw light emitting layer 6 is by 5-15 week The In of phaseyGa1-yN/GaN trap builds structure composition, wherein SQW InyGa1-yThe thickness of N shell is 2-5nm, y=0.1-0.3, growth Temperature is 700-800 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000；The wherein thickness of GaN barrier layer For 8-15nm, growth temperature is 800-950 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, Si group Point mol ratio is 0.5%-3%.
Step 7, growing P-type AlGaN layer 7, particularly as follows: after multicycle mqw light emitting layer 6 growth terminates, growth thickness For the p-type AlGaN layer 7 of 50-200nm, MO source used is TMAl, TMGa and Cp2Mg；Growth temperature is 900-1100 DEG C, growth Time is 3-10min, pressure at 20-200Torr, V/III mol ratio be the molar constituent of 1000-20000, Al be 10%- The molar constituent of 30%, Mg is 0.05%-0.3%.
Step 8, growth GaN:Mg layer group 8 ', specifically: the GaN:Mg monolayer 8.1 ' in 1-80 cycle of growth；Described The growth course of GaN:Mg monolayer 8.1 ' is specifically: controlling temperature is 750 DEG C-850 DEG C, is passed through TMGa and Cp2Mg, growth thickness A GaN:Mg layer for 5-50nm；Being warming up to 850 DEG C-1000 DEG C, growth thickness is the 2nd GaN:Mg layer of 5-50nm；
Step 9, growth P-type GaN contact layer 9 are particularly as follows: GaN:Mg layer group 8 ' grows after terminating, and growth thickness is 5- The p-type GaN contact layer 9 of 20nm, MO source used is TMGa and Cp2Mg；Growth temperature is 850-1050 DEG C, and growth pressure is 100- 500Torr, V/III mol ratio is 1000-5000；
Step 10, cooling annealing, particularly as follows: after epitaxial growth terminates, be down to 650-800 by the temperature of reative cell DEG C, use pure nitrogen gas atmosphere to carry out making annealing treatment 5-10min, be then down to room temperature, terminate growth.
The core of the present invention is step 8, traditional p-type GaN layer is designed as GaN:Mg layer group 8 ' and (i.e. uses low temperature Grow a GaN:Mg layer and the combination of high growth temperature the 2nd GaN:Mg layer, form the alternating layer structure of high/low temperature growth), pass through Low-temperature epitaxy, improves Mg concentration, it is provided that relatively multi-hole, further through high growth temperature, improves material crystalline quality, improves hole migration Rate, is grown by alternate cycle, thus improves the hole Injection Level of quantum well region, reduces the running voltage of LED, improves The luminous efficiency of LED.
It is labeled as sample 1, by this enforcement by using prior art (method described in background technology) prepared product The product that example prepares is labeled as sample 2, two prescription methods be different only in that in form 1 listed parameter, refer to table 1:
Parameter lookup table in table 1 sample 1 and sample 2 growth course
Sample 1 is plated under identical process conditions with sample 2 ITO layer 150nm, identical under conditions of plate Cr/Pt/Au electricity Pole 70nm, identical under conditions of applying silicon oxide protective layer 30nm, the most at identical conditions sample grinding and cutting is become 762 The chip granule of μ m 762 μm (30mil × 30mil), subsequently at each 150 crystalline substances of identical position selected sample 1 and sample 2 Grain, under identical packaging technology, is packaged into white light LEDs, finally uses integrating sphere test specimens under the conditions of driving electric current 350mA Product 1 and the photoelectric properties of sample 2, details such as Fig. 3 and Fig. 4.
From Fig. 3 data, sample 2 is compared with sample 1, and brightness increases to more than 520mw from about 500mw；From Fig. 4 number According to visible, sample 2 is compared with sample 1, and driving voltage is reduced to about 3.17v from 3.32V, it can be seen that, the technical program carries The growing method of confession improves the brightness of large size chip, and reduces driving voltage simultaneously.
Embodiment 2-embodiment 4
Embodiment 2-embodiment 4 difference from Example 1 is only that: the GaN:Mg monolayer that GaN:Mg layer group 8 ' comprises The quantity of 8.1 ' is different, specifically: in embodiment 2, GaN:Mg layer group 8 ' comprises 1 GaN:Mg monolayer 8.1 '；In embodiment 3 GaN:Mg layer group 8 ' comprises 40 GaN:Mg monolayers 8.1 '；In embodiment 4, GaN:Mg layer group 8 ' comprises 80 GaN:Mg monolayers 8.1’。
Embodiment 2-embodiment 4 products obtained therefrom is labeled as sample 3-5 successively, and Details as Follows:
Sample 3 compares with sample 1: brightness increases to more than 505mw from about 500mw, and driving voltage is reduced to from 3.32V 3.22v left and right；
Sample 4 compares with sample 1: brightness increases to more than 522mw from about 500mw, and driving voltage is reduced to from 3.32V 3.10v left and right；
Sample 5 compares with sample 1: brightness increases to more than 521mw from about 500mw, and driving voltage is reduced to from 3.32V 3.12v left and right.
The foregoing is only embodiments of the invention, not thereby limit the scope of patent protection of the present invention, every utilization Equivalent structure or equivalence flow process that description of the invention and accompanying drawing content are made convert, and are directly or indirectly used in what other was correlated with Technical field, is the most in like manner included in the scope of patent protection of the present invention.

Claims (10)

1. the LED growing method that can improve light efficiency, it is characterised in that include that Sapphire Substrate (1) is annealed successively Process, growing low temperature GaN nucleating layer (2), growth high temperature GaN cushion (3), the U-shaped GaN layer (4) of growth undoped, growth N Type GaN layer (5), growth multicycle mqw light emitting layer (6), growing P-type AlGaN layer (7), growth GaN:Mg layer group (8 '), life Long p-type GaN contact layer (9) and cooling annealing；
The thickness of described GaN:Mg layer group (8 ') is 50-800nm, and it includes 1-80 GaN:Mg monolayer of cyclical growth (8.1’)；Described GaN:Mg monolayer (8.1 ') includes a GaN:Mg layer and the 2nd GaN:Mg layer, described GaN:Mg monolayer The growth course of (8.1 ') is specifically: controlling temperature is 750 DEG C-850 DEG C, is passed through TMGa and Cp2Mg, growth thickness is 5-50nm A GaN:Mg layer；Being warming up to 850 DEG C-1000 DEG C, growth thickness is the 2nd GaN:Mg layer of 5-50nm.
The LED growing method improving light efficiency the most according to claim 1, it is characterised in that Sapphire Substrate (1) annealing is particularly as follows: anneal Sapphire Substrate (1) in hydrogen atmosphere, cleans substrate surface, and temperature is 1050-1150℃；
Growing low temperature GaN nucleating layer (2), particularly as follows: drop to 500-620 DEG C at a temperature of Jiang, is passed through NH3And TMGa, growth thickness is Low temperature GaN nucleating layer (2) of 20-40nm, growth pressure is 400-650Torr, and V/III mol ratio is 500-3000.
The LED growing method improving light efficiency the most according to claim 1, it is characterised in that growth high temperature GaN Cushion (3), particularly as follows: low temperature GaN nucleating layer (2) grows after terminating, stops being passed through TMGa, carries out in-situ annealing process, annealing Temperature is increased to 1000-1100 DEG C, and annealing time is 5-10min；After annealing, temperature is regulated to 900-1050 DEG C, continue Being passed through TMGa, epitaxial growth thickness is high temperature GaN cushion (3) of 0.2-1um, and growth pressure is 400-650Torr, V/III Mol ratio is 500-3000.
The LED growing method improving light efficiency the most according to claim 1, it is characterised in that growth undoped U-shaped GaN layer (4) particularly as follows: high temperature GaN cushion (3) growth terminate after, be passed through NH3It is 1-3um's with TMGa growth thickness The U-shaped GaN layer (4) of undoped, growth temperature is 1050-1200 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 300-3000。
The LED growing method improving light efficiency the most according to claim 1, it is characterised in that growth N-type GaN Layer (5), particularly as follows: the U-shaped GaN layer (4) of undoped grows after terminating, is passed through NH3, TMGa and SiH4, growth thickness is 2-4um's N-type GaN layer (5), growth temperature is 1050-1200 DEG C, and growth pressure is 100-600Torr, and V/III mol ratio is 300- 3000, Si doping contents are 8E18-2E19atom/cm3。
The LED growing method improving light efficiency the most according to claim 1, it is characterised in that growth multicycle Mqw light emitting layer (6) is particularly as follows: N-type GaN layer (5) grows multicycle mqw light emitting layer (6), MO source used after having grown For TMIn, TEGa, N type dopant is silane；Multicycle mqw light emitting layer (6) is by the In in 5-15 cycleyGa1-yN/GaN trap Base structure composition, wherein SQW InyGa1-yThe thickness of N shell is 2-5nm, y=0.1-0.3, and growth temperature is 700-800 DEG C, Growth pressure is 100-500Torr, and V/III mol ratio is 300-5000；Wherein the thickness of GaN barrier layer is 8-15nm, growth temperature Degree is for 800-950 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, and Si component molar proportioning is 0.5%-3%.
The LED growing method improving light efficiency the most according to claim 1, it is characterised in that growing P-type AlGaN layer (7) is particularly as follows: multicycle mqw light emitting layer (6) grows after terminating, and growth thickness is p-type AlGaN of 50-200nm Layer (7), MO source used is TMAl, TMGa and Cp2Mg；Growth temperature is 900-1100 DEG C, and growth time is 3-10min, pressure At 20-200Torr, V/III mol ratio is that the molar constituent that molar constituent is 10%-30%, Mg of 1000-20000, Al is 0.05%-0.3%.
The LED growing method improving light efficiency the most according to claim 1, it is characterised in that growth P-type GaN Contact layer (9) is particularly as follows: GaN:Mg layer group (8 ') grows after terminating, and growth thickness is the p-type GaN contact layer (9) of 5-20nm, institute It is TMGa and Cp with MO source2Mg；Growth temperature is 850-1050 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 1000-5000；
Cooling annealing, particularly as follows: after epitaxial growth terminates, the temperature of reative cell is down to 650-800 DEG C, uses pure nitrogen gas Atmosphere carries out making annealing treatment 5-10min, is then down to room temperature, terminates growth.
9. a LED for the improved light efficiency that method as described in claim 1-8 any one obtains, its feature exists In, including the Sapphire Substrate (1) stacked gradually from the bottom up, low temperature GaN nucleating layer (2), high temperature GaN cushion (3), non-mix Miscellaneous U-shaped GaN layer (4), N-type GaN layer (5), multicycle mqw light emitting layer (6), p-type AlGaN layer (7), GaN:Mg layer group (8 ') and p-type GaN contact layer (9)；
The thickness of described GaN:Mg layer group (8 ') is 50-800nm, and it includes 1-80 GaN:Mg monolayer (8.1 ')；Described GaN: Mg monolayer (8.1 ') includes a GaN:Mg layer and the 2nd GaN:Mg layer.
The LED improving light efficiency the most according to claim 9, it is characterised in that
The thickness of described low temperature GaN nucleating layer (2) is 20-40nm；
The thickness of described high temperature GaN cushion (3) is 0.2-1um；
The thickness of the U-shaped GaN layer (4) of described undoped is 1-3um；
The thickness of described N-type GaN layer (5) is 2-4um；
Described multicycle mqw light emitting layer (6) is by the In in 5-15 cycleyGa1-yN/GaN trap builds the structure of composition, single InyGa1-yN/GaN trap is built and is included the In that thickness is 2-5nmyGa1-yN shell and the GaN barrier layer that thickness is 8-15nm, wherein y=0.1- 0.3；
The thickness of described p-type AlGaN layer (7) is 50-200nm；
The thickness of described p-type GaN contact layer (9) is 5-20nm.
CN201610580873.3A 2016-07-21 2016-07-21 LED and the growing method thereof of light efficiency can be improved Pending CN106129193A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531855A (en) * 2016-12-14 2017-03-22 湘能华磊光电股份有限公司 LED epitaxial structure and growth method therefor
CN106848025A (en) * 2016-12-13 2017-06-13 华灿光电（浙江）有限公司 Growth method of light-emitting diode epitaxial wafer
CN109346574A (en) * 2018-09-03 2019-02-15 淮安澳洋顺昌光电技术有限公司 A kind of epitaxial wafer and growing method improving gallium nitride based LED light-emitting diode luminance

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106848025A (en) * 2016-12-13 2017-06-13 华灿光电（浙江）有限公司 Growth method of light-emitting diode epitaxial wafer
CN106848025B (en) * 2016-12-13 2019-04-12 华灿光电（浙江）有限公司 Growth method of light-emitting diode epitaxial wafer
CN106531855A (en) * 2016-12-14 2017-03-22 湘能华磊光电股份有限公司 LED epitaxial structure and growth method therefor
CN109346574A (en) * 2018-09-03 2019-02-15 淮安澳洋顺昌光电技术有限公司 A kind of epitaxial wafer and growing method improving gallium nitride based LED light-emitting diode luminance

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