CN107658374A - A kind of epitaxial wafer of light emitting diode and preparation method thereof - Google Patents
A kind of epitaxial wafer of light emitting diode and preparation method thereof Download PDFInfo
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- CN107658374A CN107658374A CN201710724777.6A CN201710724777A CN107658374A CN 107658374 A CN107658374 A CN 107658374A CN 201710724777 A CN201710724777 A CN 201710724777A CN 107658374 A CN107658374 A CN 107658374A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 105
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 105
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 92
- 239000011787 zinc oxide Substances 0.000 claims abstract description 46
- 239000002131 composite material Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 230000012010 growth Effects 0.000 claims description 44
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 16
- 238000005516 engineering process Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 abstract description 13
- 239000010980 sapphire Substances 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 10
- 230000010287 polarization Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 32
- 229910052757 nitrogen Inorganic materials 0.000 description 16
- 229910052738 indium Inorganic materials 0.000 description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- 238000000137 annealing Methods 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of epitaxial wafer of light emitting diode and preparation method thereof, belong to technical field of semiconductors.Epitaxial wafer includes substrate and the cushion, n type gallium nitride layer, multiple quantum well layer, electronic barrier layer and the p-type gallium nitride layer that are sequentially laminated on substrate, epitaxial wafer also includes the composite bed being layered between cushion and n type gallium nitride layer, composite bed includes multiple gallium nitride layers and multiple zinc oxide films, multiple gallium nitride layers and the alternately laminated setting of multiple zinc oxide films.The present invention between cushion and n type gallium nitride layer by setting composite bed, composite bed includes multiple gallium nitride layers of alternately laminated setting and multiple zinc oxide films, dislocation caused by lattice mismatch between sapphire or silicon substrate and gallium nitride can effectively be controlled and answer force polarization to extend, improve the crystal mass of epitaxial wafer, preferable crystal basis is improved for multiple quantum well layer, the internal quantum efficiency of light emitting diode is improved, and then improves the luminous efficiency of light emitting diode.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of epitaxial wafer of light emitting diode and preparation method thereof.
Background technology
Light emitting diode (English：Light Emitting Diode, referred to as：LED it is) electroluminescent using the PN junction of semiconductor
A kind of light emitting semiconductor device made of principle of luminosity.Epitaxial wafer is the primary finished product in light emitting diode preparation process.
Existing epitaxial wafer includes substrate and the cushion, undoped gallium nitride layer, the N-type nitrogen that are sequentially laminated on substrate
Change gallium layer, multiple quantum well layer, electronic barrier layer and p-type gallium nitride layer.Wherein, multiple quantum well layer includes multiple SQWs and multiple
Quantum is built, and multiple SQWs and multiple quantum build alternately laminated setting, and SQW is indium gallium nitrogen layer, and it is gallium nitride layer that quantum, which is built,.
When Injection Current, the hole injection compound hair of multiple quantum well layer for electronics and p-type the gallium nitride layer offer that n type gallium nitride layer provides
Light.
During the present invention is realized, inventor has found that prior art at least has problems with：
The material generally use sapphire or silicon of substrate, due to sapphire (or silicon) exist between gallium nitride it is larger
Lattice mismatch (16.9%), the growing gallium nitride layer in Sapphire Substrate or silicon substrate, the bottom of gallium nitride layer can be present
Larger lattice mismatch, dislocation caused by lattice mismatch and stress can therewith extend during gallium nitride subsequent growth, causes
The crystal mass of epitaxial wafer is poor, influences the luminous efficiency of light emitting diode.
The content of the invention
In order to solve the problems, such as that the luminous efficiency of prior art light emitting diode is relatively low, the embodiments of the invention provide one kind
Epitaxial wafer of light emitting diode and preparation method thereof.The technical scheme is as follows：
On the one hand, the embodiments of the invention provide a kind of epitaxial wafer of light emitting diode, the epitaxial wafer include substrate with
And stack gradually cushion, n type gallium nitride layer, multiple quantum well layer, electronic barrier layer and p-type gallium nitride over the substrate
Layer, the epitaxial wafer also include the composite bed being layered between the cushion and the n type gallium nitride layer, the composite bed bag
Include multiple gallium nitride layers and multiple zinc oxide films, the multiple gallium nitride layer and the alternately laminated setting of the multiple zinc oxide film.
Optionally, the thickness of each zinc oxide film is 5nm~100nm.
Alternatively, the thickness of each gallium nitride layer is 25nm~300nm.
Alternatively, the thickness of the composite bed is 0.2 μm~2 μm.
Alternatively, the quantity of the multiple zinc oxide film is identical with the quantity of the multiple gallium nitride layer, the multiple nitrogen
The quantity for changing gallium layer is 5~50.
On the other hand, the embodiments of the invention provide a kind of preparation method of the epitaxial wafer of light emitting diode, the preparation
Method includes：
In Grown cushion；
Multiple gallium nitride layers and multiple zinc oxide films are grown in the buffer layers alternating, form composite bed；
Grow n type gallium nitride layer, multiple quantum well layer, electronic barrier layer and p-type gallium nitride layer successively on the composite bed.
Alternatively, it is described to grow multiple gallium nitride layers and multiple zinc oxide films in the buffer layers alternating, including：
Using zinc oxide film described in metallo-organic compound chemical gaseous phase deposition technology growth.
Preferably, the growth conditions of the zinc oxide film is identical with the growth conditions of the gallium nitride layer, the growth bar
Part includes growth temperature and growth pressure.
It is highly preferred that the growth temperature of the composite bed is 1000 DEG C~1100 DEG C.
It is highly preferred that the growth pressure of the composite bed is 100torr~500torr.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
By setting composite bed between cushion and n type gallium nitride layer, composite bed includes the multiple of alternately laminated setting
Gallium nitride layer and multiple zinc oxide films, there was only 1.9% lattice mismatch between zinc oxide film and gallium nitride layer, by zinc oxide film and
The alternately laminated setting of gallium nitride layer will not be further introduced into lattice mismatch, and the lattice constant of simultaneous oxidation zinc layers and gallium nitride layer is not
Together, multiple zinc oxide films and the alternately laminated setting of multiple gallium nitride layers, can block brilliant between Sapphire Substrate or silicon substrate
Dislocation caused by lattice mismatch and stress extension, alleviate the accumulation of dislocation and stress, to dislocation defects and answer force polarization to carry out effectively
Control, improve the crystal mass of epitaxial wafer, improve preferable crystal basis for multiple quantum well layer, improve the interior amount of light emitting diode
Sub- efficiency, and then improve the luminous efficiency of light emitting diode.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, make required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation of the epitaxial wafer for light emitting diode that the embodiment of the present invention one provides；
Fig. 2 is the structural representation for the composite bed that the embodiment of the present invention one provides；
Fig. 3 is a kind of flow chart of the preparation method of the epitaxial wafer for light emitting diode that the embodiment of the present invention two provides；
Fig. 4 is a kind of flow chart of the preparation method of the epitaxial wafer for light emitting diode that the embodiment of the present invention three provides.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiments of the invention provide a kind of epitaxial wafer of light emitting diode, referring to Fig. 1, the epitaxial wafer include substrate 1 with
And stack gradually cushion 2, composite bed 3, n type gallium nitride layer 4, multiple quantum well layer 5, electronic barrier layer 6 and P on substrate 1
Type gallium nitride layer 7.
In the present embodiment, multiple gallium nitride layers 31 and multiple zinc oxide films 32, multiple nitrogen are included referring to Fig. 2, composite bed 3
Change gallium layer 31 and the 32 alternately laminated setting of multiple zinc oxide films.
For the embodiment of the present invention by setting composite bed between cushion and n type gallium nitride layer, composite bed includes alternating layer
The folded multiple gallium nitride layers set and multiple zinc oxide films, there was only 1.9% lattice mismatch between zinc oxide film and gallium nitride layer,
Zinc oxide film and the alternately laminated setting of gallium nitride layer will not be further introduced into lattice mismatch, simultaneous oxidation zinc layers and gallium nitride layer
Lattice constant it is different, multiple zinc oxide films and the alternately laminated setting of multiple gallium nitride layers, can block Sapphire Substrate or
Dislocation caused by lattice mismatch and stress extension, alleviate the accumulation of dislocation and stress, to dislocation defects and stress between silicon substrate
Polarization control effectively, and improves the crystal mass of epitaxial wafer, improves preferable crystal basis for multiple quantum well layer, improves luminous
The internal quantum efficiency of diode, and then improve the luminous efficiency of light emitting diode.
Alternatively, the thickness of each zinc oxide film can be 5nm~100nm.
Alternatively, the thickness of each gallium nitride layer can be 25nm~300nm.
In the specific implementation, the thickness of zinc oxide film is less than the thickness of gallium nitride layer, so that composite bed is overall with epitaxial wafer
Matching degree it is preferable.Specifically, the thickness of gallium nitride layer can be 3 times~5 times of the thickness of zinc oxide film.
Alternatively, the thickness of composite bed can be 0.2 μm~2 μm.If the thickness of composite bed is less than 0.2 μm, can not have
Effect controls dislocation caused by lattice mismatch between sapphire or silicon substrate and gallium nitride and answers force polarization to extend；If the thickness of composite bed
Degree is more than 2 μm, then can cause the waste of material.
Alternatively, the quantity of multiple zinc oxide films is identical with the quantity of multiple gallium nitride layers, the quantity of multiple gallium nitride layers
It can be 5~50.If the quantity of multiple gallium nitride layers is less than 5, sapphire or silicon substrate and nitrogen can not be effectively controlled
Changing dislocation caused by lattice mismatch and answers force polarization to extend between gallium；If the quantity of multiple gallium nitride layers is more than 50, can make
Into the waste of material.
Specifically, substrate is Sapphire Substrate or silicon substrate.Cushion can be gallium nitride layer, or aluminium nitride
Layer.SQW can be indium gallium nitrogen layer, and it can be gallium nitride layer that quantum, which is built, or gallium nitride layer.Electronic barrier layer can be with
For the Al of p-type dopingyGa1-yN layers, 0.1 ＜ y ＜ 0.5.
Alternatively, the thickness of cushion can be 15nm~35nm.
Alternatively, the thickness of n type gallium nitride layer can be 1 μm~5 μm.
Alternatively, the doping concentration of N type dopant can be 10 in n type gallium nitride layer18cm-3~1019cm-3。
Alternatively, the thickness of SQW can be 2nm~3nm.
Alternatively, the thickness that quantum is built can be 9nm~20nm.
Alternatively, the number of plies that quantum is built is identical with SQW, and the number of plies of SQW can be 3~15 layers.
Alternatively, the thickness of electronic barrier layer can be 50nm~150nm.
Alternatively, the thickness of p-type gallium nitride layer can be 105nm~500nm.
Embodiment two
The embodiments of the invention provide a kind of preparation method of the epitaxial wafer of light emitting diode, suitable for preparing embodiment one
The epitaxial wafer of offer, referring to Fig. 3, the preparation method includes：
Step 201：In Grown cushion.
Specifically, the step 201 can include：
It is 400 DEG C~600 DEG C to control temperature, and pressure is 400Torr~600Torr, on a sapphire substrate growth thickness
For 15nm~35nm gallium nitride layer, cushion is formed.
Alternatively, before step 201, the preparation method can also include：
It is 1100 DEG C to control temperature, and substrate is annealed 8 minutes in hydrogen atmosphere, and carries out nitrogen treatment, to clean lining
Bottom.
Specifically, substrate can use the sapphire of [0001] crystal orientation.
Alternatively, after step 201, the preparation method can also include：
It is 1000 DEG C~1200 DEG C to control temperature, and pressure is 400Torr~600Torr, and the duration is 5 minutes~10 points
Clock, in-situ annealing processing is carried out to cushion.
Step 202：Multiple gallium nitride layers and multiple zinc oxide films are grown in buffer layers alternating, form composite bed.
Specifically, developing zinc oxide layer, can include：
Using metallo-organic compound chemical gaseous phase deposition (English：Metal Organic Chemical
VaporDeposition, referred to as：MOCVD) technology growth zinc oxide film.
Specifically, growing gallium nitride layer, can include：
Using MOCVD technology growth gallium nitride layers.
In the specific implementation, zinc oxide film and gallium nitride layer can use MOCVD technology growths, difference only exists
The reactant being passed through when, developing zinc oxide layer is water and diethyl zinc, and the reactant being passed through during growing gallium nitride layer is ammonia
And trimethyl gallium.
Alternatively, the growth conditions of zinc oxide film can be identical with the growth conditions of gallium nitride layer, and growth conditions includes life
Long temperature and growth pressure.Growth conditions is identical, realizes simple and convenient.
Preferably, the growth temperature of composite bed can be 1000 DEG C~1100 DEG C.With same position in existing epitaxial wafer
Undoped gallium nitride layer is identical, realizes simple and convenient.
Preferably, the growth pressure of composite bed can be 100torr~500torr.With same position in existing epitaxial wafer
Undoped gallium nitride layer it is identical, realize simple and convenient.
Step 203：Grow n type gallium nitride layer, multiple quantum well layer, electronic barrier layer and p-type nitridation successively on composite bed
Gallium layer.
Specifically, the step 203 can include：
It is 1000 DEG C~1200 DEG C to control temperature, and pressure is 100torr~500torr, and growth thickness is 1 on composite bed
μm~5 μm, doping concentration 1018cm-3~1019cm-3N type gallium nitride layer；
Control pressure is 100torr~500torr, alternating growth indium gallium nitrogen layer and gallium nitride layer on n type gallium nitride layer,
The growth temperature of indium gallium nitrogen layer is 720 DEG C~829 DEG C, and the growth temperature of gallium nitride layer is 850 DEG C~959 DEG C, forms Multiple-quantum
Well layer；
It is 850 DEG C~1080 DEG C to control temperature, and pressure is 200torr~500torr, the growth thickness on multiple quantum well layer
For 50nm~150nm p-type gallium nitride layer, electronic barrier layer is formed；
It is 750 DEG C~1080 DEG C to control temperature, and pressure is 200torr~500torr, the growth thickness on electronic barrier layer
For 100nm~200nm p-type gallium nitride layer；
It is 850 DEG C~1050 DEG C to control temperature, and pressure be 100torr~300torr, continued growth thickness for 5nm~
300nm p-type gallium nitride layer.
More specifically, the thickness of SQW can be 2nm~3nm；The thickness that quantum is built can be 9nm~20nm；, quantum
The number of plies at base is identical with SQW, and the number of plies of SQW can be 3~15 layers.
Alternatively, after step 203, the preparation method can also include：
It is 650 DEG C~850 DEG C to control temperature, and the duration is 5 minutes~15 minutes, is carried out in nitrogen atmosphere at annealing
Reason.
It should be noted that in the present embodiment, control temperature, pressure are each meant in the reaction chamber of control growth epitaxial wafer
Temperature, pressure.Using trimethyl gallium or trimethyl second as gallium source when realizing, high pure nitrogen is as nitrogen source, trimethyl indium conduct
Indium source, for trimethyl aluminium as silicon source, N type dopant selects silane, and P-type dopant selects two luxuriant magnesium.
For the embodiment of the present invention by setting composite bed between cushion and n type gallium nitride layer, composite bed includes alternating layer
The folded multiple gallium nitride layers set and multiple zinc oxide films, there was only 1.9% lattice mismatch between zinc oxide film and gallium nitride layer,
Zinc oxide film and the alternately laminated setting of gallium nitride layer will not be further introduced into lattice mismatch, simultaneous oxidation zinc layers and gallium nitride layer
Lattice constant it is different, multiple zinc oxide films and the alternately laminated setting of multiple gallium nitride layers, can block Sapphire Substrate or
Dislocation caused by lattice mismatch and stress extension, alleviate the accumulation of dislocation and stress, to dislocation defects and stress between silicon substrate
Polarization control effectively, and improves the crystal mass of epitaxial wafer, improves preferable crystal basis for multiple quantum well layer, improves luminous
The internal quantum efficiency of diode, and then improve the luminous efficiency of light emitting diode.
Embodiment three
The embodiments of the invention provide the preparation that a kind of preparation method of the epitaxial wafer of light emitting diode, the present embodiment provide
Method is a kind of specific implementation for the preparation method that embodiment two provides.Referring to Fig. 4, the preparation method includes：
Step 301：It is 1100 DEG C to control temperature, substrate is annealed 8 minutes in hydrogen atmosphere, and carry out nitrogen treatment.
Step 302：It is 500 DEG C, pressure 500Torr to control temperature, and growth thickness is 25nm's on a sapphire substrate
Gallium nitride layer, form cushion.
Step 303：It is 1100 DEG C, pressure 500Torr to control temperature, and the duration is 7.5 minutes, and cushion is carried out
In-situ annealing processing.
Step 304：It is 1050 DEG C, pressure 300torr to control temperature, buffer layers alternating grow multiple gallium nitride layers and
Multiple zinc oxide films, form composite bed.
In the present embodiment, composite bed includes 25 gallium nitride layers and 25 zinc oxide films, the thickness of gallium nitride layer are
10nm, the thickness of zinc oxide film is 30nm.
Step 305：Control temperature be 1100 DEG C, pressure 300torr, on composite bed growth thickness be 3 μm, doping it is dense
Spend for 5*1018cm-3N type gallium nitride layer.
Step 306：Control pressure is 300torr, alternating growth indium gallium nitrogen layer and gallium nitride layer on n type gallium nitride layer,
The growth temperature of indium gallium nitrogen layer is 775 DEG C, and the growth temperature of gallium nitride layer is 905 DEG C, forms multiple quantum well layer.
In the present embodiment, multiple quantum well layer includes 10 indium gallium nitrogen layers and 10 gallium nitride layers, the thickness of indium gallium nitrogen layer
For 3nm, the thickness of gallium nitride layer is 15nm.
Step 307：It is 965 DEG C, pressure 350torr to control temperature, and growth thickness is 100nm's on multiple quantum well layer
P-type gallium nitride layer, form electronic barrier layer.
Step 308：It is 915 DEG C, pressure 350torr to control temperature, and growth thickness is 150nm's on electronic barrier layer
P-type gallium nitride layer.
Step 309：It is 950 DEG C, pressure 200torr to control temperature, and continued growth thickness is 150nm p-type gallium nitride
Layer.
Step 310：It is 750 DEG C to control temperature, and the duration is 10 minutes, is made annealing treatment in nitrogen atmosphere.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (10)
1. a kind of epitaxial wafer of light emitting diode, the epitaxial wafer includes substrate and stacks gradually buffering over the substrate
Layer, n type gallium nitride layer, multiple quantum well layer, electronic barrier layer and p-type gallium nitride layer, it is characterised in that the epitaxial wafer also includes
The composite bed being layered between the cushion and the n type gallium nitride layer, the composite bed include multiple gallium nitride layers and more
Individual zinc oxide film, the multiple gallium nitride layer and the alternately laminated setting of the multiple zinc oxide film.
2. epitaxial wafer according to claim 1, it is characterised in that the thickness of each zinc oxide film be 5nm~
100nm。
3. epitaxial wafer according to claim 1 or 2, it is characterised in that the thickness of each gallium nitride layer be 25nm~
300nm。
4. epitaxial wafer according to claim 1 or 2, it is characterised in that the thickness of the composite bed is 0.2 μm~2 μm.
5. epitaxial wafer according to claim 1 or 2, it is characterised in that the quantity of the multiple zinc oxide film with it is described more
The quantity of individual gallium nitride layer is identical, and the quantity of the multiple gallium nitride layer is 5~50.
6. a kind of preparation method of the epitaxial wafer of light emitting diode, it is characterised in that the preparation method includes：
In Grown cushion；
Multiple gallium nitride layers and multiple zinc oxide films are grown in the buffer layers alternating, form composite bed；
Grow n type gallium nitride layer, multiple quantum well layer, electronic barrier layer and p-type gallium nitride layer successively on the composite bed.
7. preparation method according to claim 6, it is characterised in that described to grow multiple nitridations in the buffer layers alternating
Gallium layer and multiple zinc oxide films, including：
Using zinc oxide film described in metallo-organic compound chemical gaseous phase deposition technology growth.
8. preparation method according to claim 7, it is characterised in that the growth conditions of the zinc oxide film and the nitridation
The growth conditions of gallium layer is identical, and the growth conditions includes growth temperature and growth pressure.
9. preparation method according to claim 8, it is characterised in that the growth temperature of the composite bed be 1000 DEG C~
1100℃。
10. preparation method according to claim 8, it is characterised in that the growth pressure of the composite bed be 100torr~
500torr。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109192826A (en) * | 2018-07-09 | 2019-01-11 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN109545918A (en) * | 2018-09-27 | 2019-03-29 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN117276336A (en) * | 2023-11-22 | 2023-12-22 | 江西兆驰半导体有限公司 | Epitaxial structure of HEMT and preparation method thereof |
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| CN109192826A (en) * | 2018-07-09 | 2019-01-11 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN109545918A (en) * | 2018-09-27 | 2019-03-29 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN117276336A (en) * | 2023-11-22 | 2023-12-22 | 江西兆驰半导体有限公司 | Epitaxial structure of HEMT and preparation method thereof |
| CN117276336B (en) * | 2023-11-22 | 2024-02-20 | 江西兆驰半导体有限公司 | Epitaxial structure of HEMT and preparation method thereof |
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