CN117276336B - Epitaxial structure of HEMT and preparation method thereof - Google Patents

Epitaxial structure of HEMT and preparation method thereof Download PDF

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CN117276336B
CN117276336B CN202311560384.8A CN202311560384A CN117276336B CN 117276336 B CN117276336 B CN 117276336B CN 202311560384 A CN202311560384 A CN 202311560384A CN 117276336 B CN117276336 B CN 117276336B
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侯合林
谢志文
张铭信
陈铭胜
文国昇
金从龙
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Jiangxi Zhao Chi Semiconductor Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract

The invention relates to the technical field of semiconductors, and particularly discloses an epitaxial structure of a HEMT (high electron mobility transistor) and a preparation method thereof, wherein the epitaxial structure comprises a Si substrate, a composite buffer layer and an epitaxial layer which are sequentially arranged, the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along an epitaxial direction, the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is sequentially decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are sequentially decreased along the epitaxial direction; the second composite layer comprises undoped GaN sublayers, oxygen-carbon co-doped GaN sublayers and Ga which are alternately laminated periodically 2 O 3 A sub-layer. According to the invention, through the mutual matching of all the sub-layers in the composite buffer layer, the problem that the epitaxial layer is easy to crack is solved, the crystal quality of the epitaxial layer is improved, the leakage current of the composite buffer layer is reduced, and the breakdown voltage resistance of the device is improved.

Description

Epitaxial structure of HEMT and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to an epitaxial structure of a HEMT and a preparation method thereof.
Background
In a gallium nitride-based HEMT device, a silicon material is often used as an epitaxial growth substrate, however, serious lattice mismatch and thermal mismatch exist between the Si substrate and the gallium nitride epitaxial material, in the prior art, the lattice mismatch is relieved by growing a thicker AlGaN/GaN buffer layer, but the grown epitaxial layer is easy to crack due to the lattice mismatch and the thermal mismatch between the Si substrate and the gallium nitride epitaxial material, the defect density is high, the crystal quality is low, and a leakage channel is easy to form, so that the two-dimensional electron gas concentration of a channel layer is reduced, the leakage current of the buffer layer is large, the breakdown resistance of the device is reduced, and the performance of the device is influenced.
Disclosure of Invention
The invention aims at providing an epitaxial structure of HEMT and a preparation method thereof aiming at the prior art.
According to the invention, through mutual matching of all sub-layers in the composite buffer layer, lattice mismatch and thermal mismatch between the Si substrate and the GaN epitaxial material are effectively relieved, defects generated by lattice mismatch and thermal mismatch in the composite buffer layer are reduced, the problem that the epitaxial layer is easy to crack is solved, the crystal quality of the epitaxial layer is improved, the leakage current of the composite buffer layer is reduced, and the breakdown voltage resistance of the device is improved.
In order to achieve the above purpose, the invention adopts the following technical scheme:
firstly, the invention provides an epitaxial structure of HEMT, comprising Si substrate, composite buffer layer and epitaxial layer which are arranged in sequence,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
In some embodiments, the ZnS sublayer has a thickness of 10nm to 200nm and the AlInGaN sublayer has a thickness of 50nm to 500nm.
In some embodiments, the AlInGaN sub-layer has an Al content of x and an In content of y, where x is 0-0.5, y is 0-0.15, and y is greater than or equal to 0.23x.
In some embodiments, the oxygen-carbon co-doped GaN sub-layer has a doping concentration of oxygen of 1×10 18 cm -3 ~1×10 19 cm -3 The doping concentration of carbon is 1×10 19 cm -3 ~1×10 20 cm -3 。
In some embodimentsIn an example, the thickness of the undoped GaN sub-layer is 50 nm-500 nm, the thickness of the oxygen-carbon co-doped GaN sub-layer is 10 nm-100 nm, and the thickness of the Ga is equal to or greater than the thickness of the oxygen-carbon co-doped GaN sub-layer 2 O 3 The thickness of the sub-layer is 10 nm-100 nm.
In some embodiments, the number of cycles of the first composite layer is 2 to 6, and the number of cycles of the second composite layer is 2 to 6.
In some embodiments, the epitaxial layer includes a channel layer, an insertion layer, a barrier layer and a cap layer sequentially disposed on the composite buffer layer, where the channel layer is any one or two of a GaN channel layer and an InGaN channel layer, the insertion layer is an AlN insertion layer, the barrier layer is an AlGaN barrier layer, and the cap layer is a GaN cap layer.
Secondly, the invention also provides a preparation method of the epitaxial structure of the HEMT, which comprises the following steps:
providing a Si substrate;
sequentially depositing a composite buffer layer and an epitaxial layer on the Si substrate,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
In some embodiments, the ZnS sub-layer has a thickness of 10nm to 200nm, the AlInGaN sub-layer has a thickness of 50nm to 500nm, the undoped GaN sub-layer has a thickness of 50nm to 500nm, the oxygen-carbon co-doped GaN sub-layer has a thickness of 10nm to 100nm, and the Ga 2 O 3 The thickness of the sub-layer is 10 nm-100 nm.
In some embodiments, in the AlInGaN sub-layer, the Al content is x, the In content is y, where x is 0 to 0.5, y is 0 to 0.15, and y is greater than or equal to 0.23x; in the oxygen-carbon co-doped GaN sub-layer, oxygenThe doping concentration is 1 multiplied by 10 18 cm -3 ~1×10 19 cm -3 The doping concentration of carbon is 1×10 19 cm -3 ~1×10 20 cm -3 。
The invention has the beneficial effects that:
in the composite buffer layer, firstly, a first composite layer formed by periodically and alternately laminating a ZnS sub-layer and an AlInGaN sub-layer is adopted, wherein the lattice constant of ZnS is between a Si substrate and GaN, the lattice constant and the thermal expansion coefficient of the AlInGaN sub-layer are between the Si substrate and GaN, the lattice mismatch and the thermal mismatch between the Si substrate and GaN epitaxial materials can be relieved, the crystal quality of the epitaxial layer is improved, secondly, the thickness of the ZnS sub-layer is gradually decreased along the epitaxial direction, the Al content and the In content of the AlInGaN sub-layer are gradually decreased along the epitaxial direction, namely, the thickness of the ZnS sub-layer is gradually thinned along with the periodical lamination of the ZnS sub-layer and the AlInGaN sub-layer, the lattice constant and the thermal expansion coefficient of the AlInGaN sub-layer are gradually transited from being close to the Si substrate, the defect generated by the lattice mismatch and the thermal mismatch In the composite buffer layer can be reduced, the problem that the epitaxial layer is easy to crack can be solved, the crystal quality of the composite buffer layer generated In the process of the periodically and alternately laminated structure can be improved. Secondly, the invention arranges the undoped GaN sub-layer, the oxygen-carbon co-doped GaN sub-layer and Ga on the first composite layer 2 O 3 The second composite layer is formed by periodically and alternately stacking the sub-layers, wherein the undoped GaN sub-layer has higher crystal quality, the defect density in the composite buffer layer can be reduced, the carrier concentration of the GaN epitaxial material can be reduced by the oxygen and carbon co-doping in the oxygen and carbon co-doped GaN sub-layer, the resistance of the composite buffer layer is improved, and Ga is arranged on the oxygen and carbon co-doped GaN sub-layer 2 O 3 Sublayer, ga 2 O 3 The forbidden band width of the sub-layer is larger than that of GaN, so that electrons can be effectively prevented from leaking into the composite buffer layer, and the undoped GaN sub-layer, the oxygen-carbon co-doped GaN sub-layer and Ga are combined 2 O 3 The periodically laminated structural design of the sublayers effectively reduces the composite buffer layerLeakage current improves the breakdown voltage resistance of the device.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial structure of a HEMT of the present invention.
FIG. 2 is a schematic diagram of a composite buffer layer according to the present invention.
Fig. 3 is a flowchart of a method for preparing an epitaxial structure of a HEMT of the present invention.
FIG. 4 is a flow chart of a method for preparing a composite buffer layer according to the present invention.
FIG. 5 is a flow chart of a first composite layer preparation method of the present invention.
FIG. 6 is a flow chart of a second composite layer preparation method of the present invention.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent.
First, referring to fig. 1 to 2, the present invention provides an epitaxial structure of HEMT, comprising a Si substrate 1, a composite buffer layer 2 and an epitaxial layer 3 sequentially arranged,
the composite buffer layer 2 comprises a first composite layer 21 and a second composite layer 22 which are sequentially arranged on the Si substrate 1 along the epitaxial direction,
the first composite layer 21 includes ZnS sub-layers 211 and AlInGaN sub-layers 212 which are periodically and alternately stacked, and between each period, the thickness of the ZnS sub-layers 211 decreases In sequence along the epitaxy direction, and the Al content and In content of the AlInGaN sub-layers 212 decreases In sequence along the epitaxy direction;
the second composite layer 22 comprises undoped GaN sublayers 221, oxygen-carbon co-doped GaN sublayers 222 and Ga which are alternately laminated periodically 2 O 3 A sub-layer 223.
In the composite buffer layer 2 of the present invention, first, the first composite layer 21 formed by periodically and alternately stacking the ZnS sub-layer 211 and the AlInGaN sub-layer 212 is adopted, wherein the lattice constant of ZnS is between the Si substrate 1 and GaN, the lattice constant and the thermal expansion coefficient of AlInGaN sub-layer 212 are between the Si substrate 1 and GaN, and the lattice mismatch and the thermal mismatch between the Si substrate 1 and GaN epitaxial materials can be alleviatedThe crystal quality of the epitaxial layer 3 is improved, and then, the thickness of the ZnS sub-layer 211 is gradually decreased along the epitaxial direction between each period, the Al content and In content of the AlInGaN sub-layer 212 are gradually decreased along the epitaxial direction, that is, along with the periodical lamination of the ZnS sub-layer 211 and the AlInGaN sub-layer 212, the thickness of the ZnS sub-layer 211 is gradually thinned, and the Al content and In content of the AlInGaN sub-layer 212 are gradually reduced, so that the lattice constant and the thermal expansion coefficient of the first composite layer 21 gradually transition from being close to the Si substrate 1 to being close to the GaN epitaxial material, thereby, defects generated by lattice mismatch and thermal mismatch In the composite buffer layer 2 can be reduced, the problem that the epitaxial layer 3 is easy to crack can be improved, and the periodically alternately laminated structure can annihilate dislocations generated In the part growth process, and the crystal quality of the composite buffer layer 2 can be improved. Next, the present invention provides a first composite layer 21 with an undoped GaN sublayer 221, an oxygen-carbon co-doped GaN sublayer 222 and Ga 2 O 3 The second composite layer 22 in which the sublayers 223 are periodically and alternately laminated, wherein the undoped GaN sublayer 221 has higher crystal quality, which can reduce the defect density in the composite buffer layer 2, and the co-doping of oxygen and carbon in the oxygen-carbon co-doped GaN sublayer 222 can reduce the carrier concentration of GaN epitaxial material, thereby improving the resistance of the composite buffer layer 2, and arranging Ga on the oxygen-carbon co-doped GaN sublayer 222 2 O 3 Sublayer 223, ga 2 O 3 The forbidden band width of the sub-layer 223 is larger than that of GaN, so that electrons can be effectively prevented from leaking into the composite buffer layer 2, and the undoped GaN sub-layer 221, the oxygen-carbon co-doped GaN sub-layer 222 and Ga are combined 2 O 3 The periodically stacked structural design of the sub-layer 223 effectively reduces the leakage current of the composite buffer layer 2 and improves the breakdown voltage resistance of the device.
According to the invention, through mutual matching of all sub-layers in the composite buffer layer 2, lattice mismatch and thermal mismatch between the Si substrate 1 and the GaN epitaxial material are effectively relieved, defects generated by lattice mismatch and thermal mismatch in the composite buffer layer 2 are reduced, the problem that the epitaxial layer 3 is easy to crack is solved, the crystal quality of the epitaxial layer 3 is improved, the leakage current of the composite buffer layer 2 is reduced, and the breakdown voltage resistance of a device is improved.
Wherein the thickness of the ZnS sublayer 211 is 10nm to 200nm, the thickness of the AlInGaN sublayer 212 is 50nm to 500nm, and exemplary, but not limited to, the thickness of the ZnS sublayer 211 is 10nm, 30nm, 50nm, 80nm, 100nm, 120nm, 150nm, 170nm, 190nm or 200nm, and exemplary, but not limited to, the thickness of the AlInGaN sublayer 212 is 50nm, 80nm, 100nm, 120nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm or 500nm.
Wherein, in the AlInGaN sub-layer 212, the Al content is x, the In content is y, where x is 0 to 0.5, y is 0 to 0.15, and y is equal to or greater than 0.23x, and exemplary x is 0, 0.1, 0.2, 0.3, 0.4 or 0.5, but not limited thereto, and exemplary y is 0, 0.023, 0.03, 0.046, 0.05, 0.069, 0.08, 0.09, 0.092, 0.1, 0.115, 0.12, 0.13, 0.14 or 0.15, but not limited thereto, by limiting the proportion of the Al content and the In content In the AlInGaN sub-layer 212, the lattice mismatch and thermal expansion coefficient of the AlInGaN sub-layer 212 are between the Si substrate 1 and the GaN epitaxial material, so that the lattice mismatch and the thermal mismatch of the Si substrate 1 and the GaN epitaxial material are alleviated, and the non-doped sub-layer 221 of high quality is also facilitated to be prepared later.
Wherein, in the oxygen-carbon co-doped GaN sub-layer 222, the doping concentration of oxygen is 1×10 18 cm -3 ~1×10 19 cm -3 The doping concentration of carbon is 1×10 19 cm -3 ~1×10 20 cm -3 Exemplary, the doping concentration of oxygen is 1×10 18 cm -3 、2×10 18 cm -3 、5×10 18 cm -3 、8×10 18 cm -3 Or 1X 10 19 cm -3 But not limited thereto, the doping concentration of carbon is exemplified as 1×10 19 cm -3 、2×10 19 cm -3 、5×10 19 cm -3 、7×10 19 cm -3 Or 1X 10 20 cm -3 However, the present invention is not limited thereto, and the high doping concentration of oxygen and carbon is likely to affect the crystal quality, and the low doping concentration of oxygen and carbon is difficult to effectively increase the resistance of the composite buffer layer 2.
Wherein the thickness of the undoped GaN sub-layer 221 is 50 nm-500 nm, the thickness of the oxygen-carbon co-doped GaN sub-layer 222 is 10 nm-100 nm, and the thickness of the Ga is the same as that of the GaN sub-layer 2 O 3 Thickness of sublayer 223The thickness of the undoped GaN sublayer 221 is, but not limited to, 50nm to 100nm, and the thickness of the undoped GaN sublayer 221 is, but not limited to, 50nm, 80nm, 100nm, 120nm, 150nm, 180nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm or 500nm, and the thickness of the undoped GaN sublayer 221 is too small to improve the crystal quality of the composite buffer layer 2, and is, illustratively, ga 2 O 3 The thickness of the sub-layer 223 is 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm or 100nm, but is not limited thereto, ga 2 O 3 Too small a thickness of the sub-layer 223 is difficult to block leakage of electrons into the composite buffer layer 2.
The number of cycles of the first composite layer 21 is 2-6, the number of cycles of the second composite layer 22 is 2-6, and the number of cycles of the first composite layer 21 is 2, 3, 4, 5 or 6, which is exemplary, but not limited to this, and the number of cycles of the second composite layer 22 is 2, 3, 4, 5 or 6, which is exemplary, but not limited to this, and the periodic stacked structural design of each sub-layer in the first composite layer 21 is beneficial to annihilating dislocation generated in the growth process of part, improving the crystal quality of the composite buffer layer 2, and the periodic stacked structural design of the second composite layer 22, which reduces the leakage current of the composite buffer layer 2, improves the breakdown voltage resistance of the device, and improves the reliability of the device.
Referring to fig. 1, the epitaxial layer 3 includes a channel layer 31, an insertion layer 32, a barrier layer 33 and a cap layer 34 sequentially disposed on the composite buffer layer 2, where the channel layer 31 is any one or two of a GaN channel layer and an InGaN channel layer, the insertion layer 32 is an AlN insertion layer, the barrier layer 33 is an AlGaN barrier layer, and the cap layer 34 is a GaN cap layer.
Next, referring to fig. 1 to 6, the present invention further provides a method for preparing an epitaxial structure of a HEMT, including:
providing a Si substrate 1;
a composite buffer layer 2 and an epitaxial layer 3 are sequentially deposited on the Si substrate 1,
the composite buffer layer 2 comprises a first composite layer 21 and a second composite layer 22 which are sequentially arranged on the Si substrate 1 along the epitaxial direction,
the first composite layer 21 includes ZnS sub-layers 211 and AlInGaN sub-layers 212 which are periodically and alternately stacked, and between each period, the thickness of the ZnS sub-layers 211 decreases In sequence along the epitaxy direction, and the Al content and In content of the AlInGaN sub-layers 212 decreases In sequence along the epitaxy direction;
the second composite layer 22 comprises undoped GaN sublayers 221, oxygen-carbon co-doped GaN sublayers 222 and Ga which are alternately laminated periodically 2 O 3 A sub-layer 223.
Specifically, referring to fig. 3 to 6, the preparation method includes:
s100. providing a Si substrate 1.
S200, depositing a composite buffer layer 2 on the Si substrate 1:
s210. depositing a first composite layer 21 on the Si substrate 1:
s211, depositing a ZnS sub-layer 211:
wherein, znS sub-layer 211 can be prepared by MOCVD, MBE and other epitaxial processes;
s212, depositing an AlInGaN sub-layer 212;
in the periodic lamination process of the ZnS sublayer 211 and the AlInGaN sublayer 212, the thickness of the ZnS sublayer 211 is gradually reduced, and the Al content and In content of the AlInGaN sublayer 212 are gradually reduced;
s220 depositing a second composite layer 22 on the first composite layer 21:
s221, depositing an undoped GaN sub-layer 221;
s222, depositing an oxygen-carbon co-doped GaN sub-layer 222;
s223 deposition of Ga 2 O 3 A sub-layer 223.
Wherein the thickness of the ZnS sub-layer 211 is 10 nm-200 nm, the thickness of the AlInGaN sub-layer 212 is 50 nm-500 nm, the thickness of the undoped GaN sub-layer 221 is 50 nm-500 nm, the thickness of the oxygen-carbon co-doped GaN sub-layer 222 is 10 nm-100 nm, and the Ga is the same as the above 2 O 3 The thickness of the sub-layer 223 is 10nm to 100nm.
Wherein, in the AlInGaN sub-layer 212, the Al content is x, the In content is y, wherein x is 0-0.5, y is 0-0.15, and y is not less than 0.23x; in the oxygen-carbon co-doped GaN sub-layer 222, the doping concentration of oxygen is 1×10 18 cm -3 ~1×10 19 cm -3 The doping concentration of carbon is 1×10 19 cm -3 ~1×10 20 cm -3 。
The invention is further illustrated by the following examples in conjunction with the accompanying drawings:
example 1
The embodiment discloses an epitaxial structure of HEMT, comprising Si substrate, composite buffer layer and epitaxial layer sequentially arranged,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
The number of cycles of the first composite layer is 4, thicknesses of ZnS sublayers corresponding to the 1 st to 4 th cycles are respectively 200nm, 100nm, 80nm and 30nm in sequence along the epitaxial direction, and the thicknesses of AlInGaN sublayers are 260nm.
Wherein, in the AlInGaN sub-layer, the Al content is x, the In content is y, and y is more than or equal to 0.23x, in the AlInGaN sub-layer corresponding to the 1 st to 4 th periods, x is 0.2, 0.15, 0.1 and 0 respectively In sequence, and y is 0.1, 0.07, 0.03 and 0 respectively In sequence.
Wherein, in the oxygen-carbon co-doped GaN sub-layer, the doping concentration of oxygen is 4.8X10 18 cm -3 The doping concentration of carbon was 4.1X10 19 cm -3 。
Wherein the thickness of the undoped GaN sub-layer is 200nm, the thickness of the oxygen-carbon co-doped GaN sub-layer is 40nm, and the thickness of the Ga is the same as that of the doped GaN sub-layer 2 O 3 The thickness of the sub-layer was 20nm.
Wherein the number of cycles of the second composite layer is 3.
The epitaxial layer comprises a channel layer, an inserting layer, a barrier layer and a cap layer which are sequentially arranged on the composite buffer layer, wherein the channel layer is a GaN channel layer, the inserting layer is an AlN inserting layer, the barrier layer is an AlGaN barrier layer, and the cap layer is a GaN cap layer.
Next, this embodiment discloses a method for manufacturing an epitaxial structure of a HEMT, including:
providing a Si substrate;
sequentially depositing a composite buffer layer and an epitaxial layer on the Si substrate,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
Specifically, the preparation method comprises the following steps:
and S100, providing a Si substrate.
S200, depositing a composite buffer layer on a Si substrate:
s210, depositing a first composite layer on a Si substrate:
s211, depositing a ZnS sublayer:
wherein, the ZnS sub-layer can be prepared by the epitaxial processes such as MOCVD, MBE and the like;
s212, depositing an AlInGaN sub-layer;
in the periodical lamination process of the ZnS sub-layer and the AlInGaN sub-layer, gradually reducing the thickness of the ZnS sub-layer and gradually reducing the Al content and the In content of the AlInGaN sub-layer;
s220, depositing a second composite layer on the first composite layer:
s221, depositing an undoped GaN sub-layer;
s222, depositing an oxygen-carbon co-doped GaN sub-layer;
s223 deposition of Ga 2 O 3 A sub-layer.
Example 2
The embodiment discloses an epitaxial structure of HEMT, comprising Si substrate, composite buffer layer and epitaxial layer sequentially arranged,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
The number of cycles of the first composite layer is 2, thicknesses of ZnS sublayers corresponding to the 1 st to the 2 nd cycles are respectively 200nm and 100nm in sequence along the epitaxial direction, and the thicknesses of AlInGaN sublayers are 260nm.
Wherein, in the AlInGaN sub-layer, the Al content is x, the In content is y, and y is more than or equal to 0.23x, in the AlInGaN sub-layer corresponding to the 1 st to 2 nd periods, x is 0.2 and 0.1 respectively In sequence, and y is 0.1 and 0.03 respectively In sequence.
Wherein, in the oxygen-carbon co-doped GaN sub-layer, the doping concentration of oxygen is 4.8X10 18 cm -3 The doping concentration of carbon was 4.1X10 19 cm -3 。
Wherein the thickness of the undoped GaN sub-layer is 200nm, the thickness of the oxygen-carbon co-doped GaN sub-layer is 40nm, and the thickness of the Ga is the same as that of the doped GaN sub-layer 2 O 3 The thickness of the sub-layer was 20nm.
Wherein the number of cycles of the second composite layer is 3.
The epitaxial layer comprises a channel layer, an inserting layer, a barrier layer and a cap layer which are sequentially arranged on the composite buffer layer, wherein the channel layer is a GaN channel layer, the inserting layer is an AlN inserting layer, the barrier layer is an AlGaN barrier layer, and the cap layer is a GaN cap layer.
Next, this embodiment discloses a method for manufacturing an epitaxial structure of a HEMT, including:
providing a Si substrate;
sequentially depositing a composite buffer layer and an epitaxial layer on the Si substrate,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
Specifically, the preparation method comprises the following steps:
and S100, providing a Si substrate.
S200, depositing a composite buffer layer on a Si substrate:
s210, depositing a first composite layer on a Si substrate:
s211, depositing a ZnS sublayer:
wherein, the ZnS sub-layer can be prepared by the epitaxial processes such as MOCVD, MBE and the like;
s212, depositing an AlInGaN sub-layer;
in the periodical lamination process of the ZnS sub-layer and the AlInGaN sub-layer, gradually reducing the thickness of the ZnS sub-layer and gradually reducing the Al content and the In content of the AlInGaN sub-layer;
s220, depositing a second composite layer on the first composite layer:
s221, depositing an undoped GaN sub-layer;
s222, depositing an oxygen-carbon co-doped GaN sub-layer;
s223 deposition of Ga 2 O 3 A sub-layer.
Example 3
The embodiment discloses an epitaxial structure of HEMT, comprising Si substrate, composite buffer layer and epitaxial layer sequentially arranged,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
The number of cycles of the first composite layer is 6, the thicknesses of ZnS sublayers corresponding to the 1 st to 6 th cycles are respectively 200nm, 100nm, 80nm, 30nm, 20nm and 10nm in sequence along the epitaxial direction, and the thicknesses of AlInGaN sublayers are 260nm.
Wherein, in the AlInGaN sub-layer, the Al content is x, the In content is y, and y is more than or equal to 0.23x, and In the AlInGaN sub-layer corresponding to the 1 st to 6 th periods, x is respectively 0.2, 0.16, 0.12, 0.08, 0.04 and 0 In sequence, and y is respectively 0.1, 0.08, 0.06, 0.04, 0.02 and 0 In sequence.
Wherein, in the oxygen-carbon co-doped GaN sub-layer, the doping concentration of oxygen is 4.8X10 18 cm -3 The doping concentration of carbon was 4.1X10 19 cm -3 。
Wherein the thickness of the undoped GaN sub-layer is 200nm, the thickness of the oxygen-carbon co-doped GaN sub-layer is 40nm, and the thickness of the Ga is the same as that of the doped GaN sub-layer 2 O 3 The thickness of the sub-layer was 20nm.
Wherein the number of cycles of the second composite layer is 3.
The epitaxial layer comprises a channel layer, an inserting layer, a barrier layer and a cap layer which are sequentially arranged on the composite buffer layer, wherein the channel layer is a GaN channel layer, the inserting layer is an AlN inserting layer, the barrier layer is an AlGaN barrier layer, and the cap layer is a GaN cap layer.
Next, this embodiment discloses a method for manufacturing an epitaxial structure of a HEMT, including:
providing a Si substrate;
sequentially depositing a composite buffer layer and an epitaxial layer on the Si substrate,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
Specifically, the preparation method comprises the following steps:
and S100, providing a Si substrate.
S200, depositing a composite buffer layer on a Si substrate:
s210, depositing a first composite layer on a Si substrate:
s211, depositing a ZnS sublayer:
wherein, the ZnS sub-layer can be prepared by the epitaxial processes such as MOCVD, MBE and the like;
s212, depositing an AlInGaN sub-layer;
in the periodical lamination process of the ZnS sub-layer and the AlInGaN sub-layer, gradually reducing the thickness of the ZnS sub-layer and gradually reducing the Al content and the In content of the AlInGaN sub-layer;
s220, depositing a second composite layer on the first composite layer:
s221, depositing an undoped GaN sub-layer;
s222, depositing an oxygen-carbon co-doped GaN sub-layer;
s223 deposition of Ga 2 O 3 A sub-layer.
Example 4
The embodiment discloses an epitaxial structure of HEMT, comprising Si substrate, composite buffer layer and epitaxial layer sequentially arranged,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
The number of cycles of the first composite layer is 4, thicknesses of ZnS sublayers corresponding to the 1 st to 4 th cycles are respectively 200nm, 100nm, 80nm and 30nm in sequence along the epitaxial direction, and the thicknesses of AlInGaN sublayers are 260nm.
Wherein, in the AlInGaN sub-layer, the Al content is x, the In content is y, and y is more than or equal to 0.23x, in the AlInGaN sub-layer corresponding to the 1 st to 4 th periods, x is 0.2, 0.15, 0.1 and 0 respectively In sequence, and y is 0.1, 0.07, 0.03 and 0 respectively In sequence.
Wherein, in the oxygen-carbon co-doped GaN sub-layer, the doping concentration of oxygen is 4.8X10 18 cm -3 The doping concentration of carbon was 4.1X10 19 cm -3 。
Wherein the thickness of the undoped GaN sub-layer is 200nm, the thickness of the oxygen-carbon co-doped GaN sub-layer is 40nm, and the thickness of the Ga is the same as that of the doped GaN sub-layer 2 O 3 The thickness of the sub-layer was 20nm.
Wherein the number of cycles of the second composite layer is 2.
The epitaxial layer comprises a channel layer, an inserting layer, a barrier layer and a cap layer which are sequentially arranged on the composite buffer layer, wherein the channel layer is a GaN channel layer, the inserting layer is an AlN inserting layer, the barrier layer is an AlGaN barrier layer, and the cap layer is a GaN cap layer.
Next, this embodiment discloses a method for manufacturing an epitaxial structure of a HEMT, including:
providing a Si substrate;
sequentially depositing a composite buffer layer and an epitaxial layer on the Si substrate,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
Specifically, the preparation method comprises the following steps:
and S100, providing a Si substrate.
S200, depositing a composite buffer layer on a Si substrate:
s210, depositing a first composite layer on a Si substrate:
s211, depositing a ZnS sublayer:
wherein, the ZnS sub-layer can be prepared by the epitaxial processes such as MOCVD, MBE and the like;
s212, depositing an AlInGaN sub-layer;
in the periodical lamination process of the ZnS sub-layer and the AlInGaN sub-layer, gradually reducing the thickness of the ZnS sub-layer and gradually reducing the Al content and the In content of the AlInGaN sub-layer;
s220, depositing a second composite layer on the first composite layer:
s221, depositing an undoped GaN sub-layer;
s222, depositing an oxygen-carbon co-doped GaN sub-layer;
s223 deposition of Ga 2 O 3 A sub-layer.
Example 5
The embodiment discloses an epitaxial structure of HEMT, comprising Si substrate, composite buffer layer and epitaxial layer sequentially arranged,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
The number of cycles of the first composite layer is 4, thicknesses of ZnS sublayers corresponding to the 1 st to 4 th cycles are respectively 200nm, 100nm, 80nm and 30nm in sequence along the epitaxial direction, and the thicknesses of AlInGaN sublayers are 260nm.
Wherein, in the AlInGaN sub-layer, the Al content is x, the In content is y, and y is more than or equal to 0.23x, in the AlInGaN sub-layer corresponding to the 1 st to 4 th periods, x is 0.2, 0.15, 0.1 and 0 respectively In sequence, and y is 0.1, 0.07, 0.03 and 0 respectively In sequence.
Wherein, in the oxygen-carbon co-doped GaN sub-layer, the doping concentration of oxygen is 4.8X10 18 cm -3 The doping concentration of carbon was 4.1X10 19 cm -3 。
Wherein the thickness of the undoped GaN sub-layer is 200nm, the thickness of the oxygen-carbon co-doped GaN sub-layer is 40nm, and the thickness of the Ga is the same as that of the doped GaN sub-layer 2 O 3 The thickness of the sub-layer was 20nm.
The number of cycles of the second composite layer is 6.
The epitaxial layer comprises a channel layer, an inserting layer, a barrier layer and a cap layer which are sequentially arranged on the composite buffer layer, wherein the channel layer is a GaN channel layer, the inserting layer is an AlN inserting layer, the barrier layer is an AlGaN barrier layer, and the cap layer is a GaN cap layer.
Next, this embodiment discloses a method for manufacturing an epitaxial structure of a HEMT, including:
providing a Si substrate;
sequentially depositing a composite buffer layer and an epitaxial layer on the Si substrate,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer comprises ZnS sublayers and AlInGaN sublayers which are periodically and alternately laminated, the thickness of the ZnS sublayers is gradually decreased along the epitaxial direction between each cycle, and the Al content and In content of the AlInGaN sublayers are gradually decreased along the epitaxial direction;
the second composite layer comprises a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are alternately laminated periodically 2 O 3 A sub-layer.
Specifically, the preparation method comprises the following steps:
and S100, providing a Si substrate.
S200, depositing a composite buffer layer on a Si substrate:
s210, depositing a first composite layer on a Si substrate:
s211, depositing a ZnS sublayer:
wherein, the ZnS sub-layer can be prepared by the epitaxial processes such as MOCVD, MBE and the like;
s212, depositing an AlInGaN sub-layer;
in the periodical lamination process of the ZnS sub-layer and the AlInGaN sub-layer, gradually reducing the thickness of the ZnS sub-layer and gradually reducing the Al content and the In content of the AlInGaN sub-layer;
s220, depositing a second composite layer on the first composite layer:
s221, depositing an undoped GaN sub-layer;
s222, depositing an oxygen-carbon co-doped GaN sub-layer;
s223 deposition of Ga 2 O 3 A sub-layer.
Comparative example 1
This comparative example differs from example 1 in that the first composite layer is not provided with a ZnS sublayer, and the preparation step of this material layer is correspondingly omitted.
Comparative example 2
This comparative example differs from example 1 in that the second composite layer is not provided with an oxygen-carbon co-doped GaN sublayer, and the preparation step of this material layer is correspondingly omitted.
Comparative example 3
This comparative example differs from example 1 in that the second composite layer is not provided with Ga 2 O 3 And a sub-layer, and correspondingly omitting the preparation step of the material layer.
Comparative example 4
The difference between this comparative example and example 1 is that the thickness of ZnS sublayers corresponding to each period In the first composite layer is kept constant and is 200nm, and Al content and In content In AlInGaN sublayers corresponding to each period are kept constant, wherein x is 0.2 and y is 0.1.
Comparative example 5
The present comparative example is different from example 1 in that the composite buffer layer is replaced with a conventional buffer layer, which is a composite layer formed by sequentially laminating an AlGaN layer and a GaN layer.
HRXRD (high resolution X-ray diffraction) test and buffer layer (composite buffer layer/conventional buffer layer) leakage current test were performed on the samples prepared in examples 1 to 5 and comparative examples 1 to 5.
Wherein, the crystal quality of the epitaxial structure is characterized by the size of the high-resolution X-ray diffraction (HRXRD) rocking curve peak full width at half maximum (FWHM) of the (1012) plane of the epitaxial structure, namely, the crystal quality is characterized by the size of the value of '1012 FWHM' in the table, and the smaller the '1012 FWHM', the better the crystal quality.
The test results were as follows:
from the test results, comparative examples 1 to 5 and 5 show that the composite buffer layer of the present invention can significantly improve the crystal quality and reduce the leakage current of the composite buffer layer. In comparative examples 1, 2, 3 and 4, it is apparent that In the first composite layer, the periodic stacking of ZnS sub-layer and AlInGaN sub-layer, the periodic decreasing arrangement of the thickness of ZnS sub-layer and the Al content and In content of AlInGaN sub-layer have obvious effects of improving the crystal quality and reducing the leakage current of the composite buffer layer, and In examples 1, 4 and 5, it is apparent that the structural design of the periodic stacking of the second composite layer affects the crystal quality of the epitaxial structure and the leakage current of the composite buffer layer, wherein the effect is optimal when the cycle number is 3, and In comparative examples 1 and 3, it is apparent that the sub-layers of the composite buffer layer of the invention are matched with each other, thereby remarkably improving the crystal quality and reducing the leakage current of the composite buffer layer.
The foregoing description is only illustrative of the preferred embodiment of the present invention, and is not to be construed as limiting the invention, but is to be construed as limiting the invention to any and all simple modifications, equivalent variations and adaptations of the embodiments described above, which are within the scope of the invention, may be made by those skilled in the art without departing from the scope of the invention.

Claims (8)

1. An epitaxial structure of HEMT comprises Si substrate, composite buffer layer and epitaxial layer sequentially arranged, and is characterized in that the composite buffer layer comprises a first composite layer and a second composite layer sequentially arranged on the Si substrate along epitaxial direction,
the first composite layer is a ZnS sub-layer and an AlInGaN sub-layer which are periodically and alternately laminated In turn, the thickness of the ZnS sub-layer is gradually decreased along the epitaxial direction between each period, and the Al content and the In content of the AlInGaN sub-layer are gradually decreased along the epitaxial direction;
the second composite layer is a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are periodically and alternately laminated in turn 2 O 3 A sub-layer;
in the oxygen-carbon co-doped GaN sub-layer, the doping concentration of oxygen is 1 multiplied by 10 18 cm -3 ~1×10 19 cm -3 The doping concentration of carbon is 1×10 19 cm -3 ~1×10 20 cm -3 ；
The epitaxial layer comprises a channel layer, an inserting layer, a barrier layer and a cap layer which are sequentially arranged on the composite buffer layer, wherein the channel layer is any one or two of a GaN channel layer and an InGaN channel layer, the inserting layer is an AlN inserting layer, the barrier layer is an AlGaN barrier layer, and the cap layer is a GaN cap layer.
2. An epitaxial structure of a HEMT according to claim 1, wherein the ZnS sublayer has a thickness of 10nm to 200nm and the AlInGaN sublayer has a thickness of 50nm to 500nm.
3. The epitaxial structure of the HEMT of claim 1, wherein the AlInGaN sub-layer has an Al content of x and an In content of y, wherein x is 0-0.5, y is 0-0.15, and y is not less than 0.23x.
4. An epitaxial structure of HEMT according to claim 1, wherein said undoped GaN sub-layer has a thickness of 50nm to 500nm, said oxygen-carbon co-doped GaN sub-layer has a thickness of 10nm to 100nm, and said Ga 2 O 3 The thickness of the sub-layer is 10 nm-100 nm.
5. An epitaxial structure of a HEMT according to claim 1 wherein the number of cycles of the first composite layer is 2-6 and the number of cycles of the second composite layer is 2-6.
6. A method for manufacturing an epitaxial structure of a HEMT, comprising:
providing a Si substrate;
sequentially depositing a composite buffer layer and an epitaxial layer on the Si substrate,
the composite buffer layer comprises a first composite layer and a second composite layer which are sequentially arranged on the Si substrate along the epitaxial direction,
the first composite layer is a ZnS sub-layer and an AlInGaN sub-layer which are periodically and alternately laminated In turn, the thickness of the ZnS sub-layer is gradually decreased along the epitaxial direction between each period, and the Al content and the In content of the AlInGaN sub-layer are gradually decreased along the epitaxial direction;
the second composite layer is a non-doped GaN sub-layer, an oxygen-carbon co-doped GaN sub-layer and Ga which are periodically and alternately laminated in turn 2 O 3 A sub-layer;
in the oxygen-carbon co-doped GaN sub-layer, the doping concentration of oxygen is 1 multiplied by 10 18 cm -3 ~1×10 19 cm -3 Doping of carbonThe impurity concentration is 1X 10 19 cm -3 ~1×10 20 cm -3 ；
The epitaxial layer comprises a channel layer, an inserting layer, a barrier layer and a cap layer which are sequentially arranged on the composite buffer layer, wherein the channel layer is any one or two of a GaN channel layer and an InGaN channel layer, the inserting layer is an AlN inserting layer, the barrier layer is an AlGaN barrier layer, and the cap layer is a GaN cap layer.
7. The method according to claim 6, wherein the ZnS sublayer has a thickness of 10nm to 200nm, the AlInGaN sublayer has a thickness of 50nm to 500nm, the undoped GaN sublayer has a thickness of 50nm to 500nm, the oxygen-carbon co-doped GaN sublayer has a thickness of 10nm to 100nm, and the Ga is 2 O 3 The thickness of the sub-layer is 10 nm-100 nm.
8. The method of claim 6, wherein the Al content is x and the In content is y In the AlInGaN sub-layer, wherein x is 0 to 0.5, y is 0 to 0.15, and y is equal to or greater than 0.23x.
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