CN217444337U - Based on ScAlMgO 4 GaN-based HEMT device epitaxial structure of substrate - Google Patents

Based on ScAlMgO 4 GaN-based HEMT device epitaxial structure of substrate Download PDF

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CN217444337U
CN217444337U CN202220946742.3U CN202220946742U CN217444337U CN 217444337 U CN217444337 U CN 217444337U CN 202220946742 U CN202220946742 U CN 202220946742U CN 217444337 U CN217444337 U CN 217444337U
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layer
substrate
hemt device
epitaxial structure
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钟玉煌
张海涛
许彬
潘华
陆羽
蒲小东
王素素
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Wuxi Wuyue Semiconductor Co ltd
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Wuxi Wuyue Semiconductor Co ltd
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Abstract

The utility model disclosesBased on ScAlMgO 4 A GaN-based HEMT device epitaxial structure of the substrate, wherein the GaN-based HEMT device epitaxial structure comprises ScAlMgO which is sequentially laminated 4 Substrate, i-Al x Ga 1‑x N/i-GaN superlattice layer, i-GaN layer, i-AlN layer, i-Al layer y Ga 1‑y An N layer, and a GaN or p-type GaN layer. Compared with the prior art, the utility model discloses can effectively reduce gaN film defect density, obtain jumbo size high quality gaN HEMT device.

Description

Based on ScAlMgO 4 GaN-based HEMT device epitaxial structure of substrate
Technical Field
The utility model belongs to HEMT device field, concretely relates to based on ScAlMgO 4 And the epitaxial structure of the GaN-based HEMT device of the substrate.
Background
The GaN-based HEMT (high electron mobility transistor) device is a gallium nitride-based device taking AlGaN/GaN heterojunction as a structural base, has the advantages of high cut-off frequency, high saturation current, high transconductance and the like, and can adapt to the working environment with high power. Most of epitaxial structures of existing GaN-based HEMT devices are grown by using a Si substrate, but the Si substrate and a GaN material have 20.4% of lattice mismatch and 56% of thermal mismatch, so that a GaN epitaxial film has great tensile stress in the grown film, and the defect density of the grown GaN film is quite high.
Scandium aluminate magnesite (ScAlMgO) as compared to other conventional substrate materials 4 ) The lattice mismatch rate with gallium nitride is about 1.8%, the thermal expansion coefficient mismatch is lower than that of other traditional substrate materials, and the substrate is an ideal gallium nitride epitaxial growth substrate, but the reports of epitaxial growth of gallium nitride films by taking scandium aluminate magnesite as the substrate are relatively less. For example, patent document CN106158592A discloses a method for preparing a GaN thin film grown on a magnesium scandium aluminate substrate, which sequentially grows a GaN buffer layer, a GaN nucleation layer, a GaN amorphous layer and a GaN thin film on the magnesium scandium aluminate substrate to obtain a high-quality GaN thin film. Further, patent document CN113035689A discloses a method for producing a gallium nitride single crystal substrate, in which a GaN-based buffer layer is grown at a low temperature on a ScAlMgO4 substrate by the MOCVD methodThe GaN single crystal layer grows on the GaN series buffer layer growing in the second stage at high temperature by an HVPE method, and the high-quality GaN crystal substrate without dislocation and crystal defects is realized through slicing, grinding, polishing and cleaning. However, the quality of the GaN film grown on the ScAlMgO4 substrate by adopting the prior art is not ideal, and the half-peak width of GaN XRD (002) and (102) is more than 300 arcsec.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problems existing in the growth of the epitaxial structure of the existing GaN-based HEMT device, the utility model provides a based on ScAlMgO 4 And the epitaxial structure of the GaN-based HEMT device of the substrate.
In order to achieve the above object, the utility model adopts the following technical scheme:
based on ScAlMgO 4 The GaN-based HEMT device epitaxial structure comprises sequentially stacked ScAlMgO 4 Substrate, i-Al x Ga 1-x N/i-GaN superlattice layer, i-GaN layer, i-AlN layer, i-Al y Ga 1-y An N layer, and a GaN or p-type GaN layer.
Preferably, the i-Al x Ga 1-x The total thickness of the N/i-GaN superlattice layer is 200 nm-4000 nm, and the quality of the device is influenced if the thickness of the superlattice layer exceeds the range. Wherein the cycle number is 2-200, each i-Al x Ga 1-x The thickness of the N layer is 10nm to 1990nm, and the thickness of each i-GaN layer is 10nm to 1990 nm.
More preferably, x is 0.01 to 0.6.
Preferably, the thickness of the i-GaN layer is 500nm to 5000nm, the thickness beyond the range can affect the quality of the device, the layer is too thin and plays a limited role, and the thickness of the layer is too thick, so that particles (particles) in the reaction chamber can be increased, and the quality of the device can be affected.
Preferably, the thickness of the i-AlN layer is 0.1nm to 10nm, and exceeding the thickness range affects the quality of the device.
Preferably, the i-Al y Ga 1-y The thickness of the N layer is 5 nm-500 nm, and the quality of the device is influenced when the thickness of the N layer exceeds the thickness range.
More preferably, y is 0.01 to 0.6.
Preferably, the thickness of the GaN or p-type GaN layer is 1nm to 150 nm.
Preferably, the ScAlMgO 4 The substrate has an epitaxial surface with a (001) plane 0 to 0.3 degrees off the (110) plane.
Based on ScAlMgO 4 The preparation method of the epitaxial structure of the GaN-based HEMT device of the substrate comprises the following steps:
(1) in ScAlMgO 4 Epitaxial growth of i-Al on substrates x Ga 1-x An N/i-GaN superlattice layer;
(2) in the presence of i-Al x Ga 1-x Epitaxially growing an i-GaN layer on the N/i-GaN superlattice layer;
(3) epitaxially growing an i-AlN layer on the i-GaN layer;
(4) epitaxially growing i-Al on the i-AlN layer y Ga 1-y N layers;
(5) in the presence of i-Al x Ga y And epitaxially growing a GaN or p-type GaN layer on the N layer.
Preferably, in step (1), i-Al is epitaxially grown x Ga 1-x In the case of N/i-GaN superlattice layer, i-Al x Ga 1-x The growth rate of N is 0.1-1 μm/h, and the growth rate of i-GaN is 0.2-2 μm/h.
Preferably, in the step (2), the growth rate of the epitaxially grown i-GaN layer is 0.5-5 μm/h.
Preferably, in the step (3), the growth rate of the epitaxially grown i-AlN layer is 0.05-0.5 μm/h.
Preferably, in step (4), i-Al is epitaxially grown y Ga 1-y The growth rate of the N layer is 0.2-2 μm/h.
Preferably, in the step (5), the growth rate of the epitaxially grown GaN or p-type GaN layer is 0.2-2 μm/h, wherein the p-type GaN is Mg-doped GaN and the doping concentration is 1E15cm -3 ～3E19cm -3 。
Advantageous effects
Compared with the prior art, the utility model discloses can effectively reduce GaN film defect density, make the half peak width of GaN XRD (002) and (102) fall to below 200arcsec to obtain jumbo size high quality GaN HEMT device.
Drawings
FIG. 1 shows that the present invention is based on ScAlMgO 4 Schematic diagram of epitaxial structure of GaN-based HEMT device of substrate.
FIG. 2 shows that the present invention is based on ScAlMgO 4 A production process flow chart of the epitaxial structure of the GaN-based HEMT device of the substrate.
Detailed Description
The technical solution of the present invention will be further described in detail with reference to the accompanying drawings and examples.
The utility model is based on ScAlMgO 4 The epitaxial structure of GaN-based HEMT device with substrate is shown in FIG. 1 and comprises ScAlMgO 4 (SAM) substrate P0, i-Al laminated in this order on the surface of substrate P0 x Ga 1-x N/i-GaN superlattice layer P1, i-GaN layer P2, i-AlN layer P3, i-Al y Ga 1-y An N layer P4, and a GaN or P-type GaN layer P5.
The ScAlMgO 4 The substrate has an epitaxial surface with a (001) plane offset from a (110) plane by 0-0.3 degrees.
The i-Al x Ga 1-x The N/i-GaN superlattice layer P1 is i-Al x Ga 1-x Structure of N layers alternating with i-GaN layers, i-Al x Ga 1-x The number of times of the N layer and the i-GaN layer in alternating circulation is 2-200. Specific cycle numbers include 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 15, 20, 30, 40, 50, 80, 100, 120, 150, 180, or 200, and the like.
i-Al x Ga 1-x The number of alternating cycles (loops) of the N layer and the i-GaN layer is calculated as follows:
loop＝1:i-Al x Ga 1-x N/i-GaN，
loop＝2:i-Al x Ga 1-x N/i-GaN/i-Al x Ga 1-x N/i-GaN,
loop＝3:i-Al x Ga 1-x N/i-GaN/i-Al x Ga 1-x N/i-GaN/i-Al x Ga 1-x N/i-GaN，
the rest of the loops, and so on.
The i-Al x Ga 1-x X of N is 0.01 to 0.6. Specific values of x are 0.01, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, 0.5, 0.55, 0.6, etc.
The i-Al x Ga 1-x The total thickness of the N/i-GaN superlattice layer P1 is 200 nm-4000 nm. The specific total thickness is 200nm, 400nm, 600nm, 800nm, 1000nm, 1200nm, 1400nm, 1600nm, 1800nm, 2000nm, 2600nm, 3200nm or 4000 nm.
In the superlattice layer, i-Al x Ga 1-x The thickness of the N layer is 10nm to 1990nm, and the thickness of each i-GaN layer is 10nm to 1990 nm.
The thickness of the i-GaN layer P2 is 500 nm-5000 nm. The specific thickness is 500nm, 600nm, 800nm, 1000nm, 1500nm, 2000nm, 2500nm, 3000nm, 3500nm, 4000nm, 4500nm or 5000 nm.
The i-AlN layer P3 plays a role in improving the two-dimensional electron concentration, and the thickness of the i-AlN layer P3 is 0.1 nm-10 nm. The specific thickness is 0.1nm, 0.2nm, 0.4nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 2nm, 2.5nm, 3nm, 3.5nm, 4nm, 5nm, 5.5nm, 6nm, 6.5nm, 7nm, 7.5nm, 8nm, 8.5nm, 9nm, 9.5nm or 10 nm.
The i-Al y Ga 1-y The thickness of the N layer P4 is 5 nm-500 nm. The specific thickness is 50nm, 60nm, 70nm, 80nm, 100nm, 120nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm or 500 nm.
The i-Al y Ga 1-y Y of N is 0.01 to 0.6. Specific y values are 0.01, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, 0.5, 0.55, 0.6, etc.
The thickness of the GaN or P-type GaN layer P5 is 1 nm-150 nm. The specific thickness is 1nm, 10nm, 20nm, 40nm, 60nm, 70nm, 80nm, 90nm, 100nm, 120nm or 150 nm.
The p-type GaN is Mg-doped pGaN with the doping concentration of 1E15cm -3 ～3E19cm -3 。
1E15＝1.0×10 15 ，3E19＝3.0×10 19 。
The utility model discloses each epitaxial layer of GaN HEMT device epitaxial structure can choose for use growth such as traditional MOCVD (metal organic chemical vapor deposition) method, CVD (chemical vapor deposition) method, PECVD (plasma enhanced chemical vapor deposition) method, MBE (molecular beam epitaxy) method, preferred MOCVD method.
In this embodiment, a process flow for preparing an epitaxial structure of a GaN HEMT device on a (001) plane of a SAM by using an MOCVD method is shown in fig. 2, and the specific process is as follows:
(1) SAM substrate P0 is provided.
(2) Growth of the first epitaxial layer: epitaxial growth of i-Al on the surface of a substrate x Ga 1-x The growth temperature of the N/i-GaN superlattice layer P1 is in the range of 500-1100 ℃, and the required gas flow rate N 2 0 to 80L/min, H 2 Flow rate of 0 to 220L/min, NH 3 0.1-60L/min, the aluminum source is trimethylaluminum, the gallium source is trimethylgallium, undoped i-Al x Ga 1-x The growth rate of the N layer is 0.1 to 1 μm/h, and the growth rate of the undoped i-GaN layer is 0.2 to 2 μm/h (loop 10, i-Al each) x Ga 1-x The thickness of the N layer is 100nm, the thickness of each i-GaN layer is 100nm, and the total thickness of the superlattice layer is 2000 nm).
(3) And (3) growing the second epitaxial layer: epitaxially growing an undoped i-GaN layer P2 on the superlattice layer P1 at the growth temperature of 1000-1100 ℃ and the required gas flow N 2 0 to 80L/min, H 2 Flow rate of 0 to 220L/min, NH 3 0.1-60L/min, trimethyl gallium as gallium source and 0.5-5 μm/h growth rate.
(4) And (3) growing a third epitaxial layer: epitaxially growing an undoped i-AlN layer P3 on the i-GaN layer P2 at the temperature of 900-1100 ℃ at the required gas flow rate N 2 0 to 80L/min, H 2 Flow rate of 0 to 220L/min, NH 3 0.1-70L/min, the aluminum source is trimethyl aluminum, and the growth rate is 0.05-0.5 μm/h.
(5) And (3) growing a fourth epitaxial layer: epitaxially growing undoped i-Al on the i-AlN layer P3 y Ga 1-y N layers of P4, the growth temperature is 900-1120 ℃, and the required gas flow rate N 2 0 to 80L/min, H 2 Flow rate of 0 to 220L/min, NH 3 0.1-70L/min, the aluminum source is trimethyl aluminum, the gallium source is trimethyl gallium, and the growth rate is 0.2-2 μm/h.
(6) And growing a fifth epitaxial layer: in the presence of i-Al y Ga 1-y Epitaxial growth of undoped N layer P4The growth temperature of GaN or the pGaN layer P5 with high Mg doping is within the range of 1000-1120 ℃, and the required gas flow N 2 0 to 80L/min, H 2 Flow rate of 0 to 220L/min, NH 3 0.1-70L/min, trimethyl gallium as gallium source and 0.2-2 μm/h growth rate.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (9)

1. Based on ScAlMgO 4 The GaN-based HEMT device epitaxial structure of the substrate is characterized in that: comprises ScAlMgO which is laminated in sequence 4 Substrate, i-Al x Ga 1-x N/i-GaN superlattice layer, i-GaN layer, i-AlN layer, i-Al y Ga 1-y An N layer, and a GaN or p-type GaN layer.
2. The GaN-based HEMT device epitaxial structure of claim 1, wherein: the i-Al x Ga 1-x The total thickness of the N/i-GaN superlattice layer is 200 nm-4000 nm, the cycle number is 2-200, wherein each i-Al layer x Ga 1-x The thickness of the N layer is 10nm to 1990nm, and the thickness of each i-GaN layer is 10nm to 1990 nm.
3. The GaN-based HEMT device epitaxial structure of claim 2, wherein: and x is 0.01-0.6.
4. The GaN-based HEMT device epitaxial structure of claim 1, wherein: the thickness of the i-GaN layer is 500 nm-5000 nm.
5. The GaN-based HEMT device epitaxial structure of claim 1, wherein: the thickness of the i-AlN layer is 0.1 nm-10 nm.
6. The GaN-based HEMT device epitaxial structure of claim 1, wherein: the i-Al y Ga 1-y The thickness of the N layer is 5 nm-500 nm.
7. The GaN-based HEMT device epitaxial structure of claim 6, wherein: and y is 0.01-0.6.
8. The GaN-based HEMT device epitaxial structure of claim 1, wherein: the thickness of the GaN or the p-type GaN layer is 1 nm-150 nm.
9. The GaN-based HEMT device epitaxial structure of claim 1, wherein: the ScAlMgO 4 The substrate has an epitaxial surface with a (001) plane 0 to 0.3 degrees off the (110) plane.
CN202220946742.3U 2022-04-22 2022-04-22 Based on ScAlMgO 4 GaN-based HEMT device epitaxial structure of substrate Active CN217444337U (en)

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