CN114242815A - N-polarity GaN/AlGaN heterojunction epitaxial structure and preparation method thereof - Google Patents

N-polarity GaN/AlGaN heterojunction epitaxial structure and preparation method thereof Download PDF

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CN114242815A
CN114242815A CN202111407956.XA CN202111407956A CN114242815A CN 114242815 A CN114242815 A CN 114242815A CN 202111407956 A CN202111407956 A CN 202111407956A CN 114242815 A CN114242815 A CN 114242815A
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polarity
algan
polar
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王文樑
江弘胜
李国强
李林浩
黄星悦
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South China University of Technology SCUT
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South China University of Technology SCUT
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Abstract

The invention discloses an N-polarity GaN/AlGaN heterojunction epitaxial structure and a preparation method thereof. The N-polarity GaN/AlGaN heterojunction epitaxial structure provided by the invention is a high-quality N-polarity GaN/AlGaN heterojunction epitaxial structure, and can realize a high-efficiency power electronic device.

Description

N-polarity GaN/AlGaN heterojunction epitaxial structure and preparation method thereof
Technical Field
The invention relates to the technical field of photoelectric device detectors, in particular to an N-polarity GaN/AlGaN heterojunction epitaxial structure and a preparation method thereof.
Background
Group III nitride materials, represented by GaN, are hot spot materials for third generation semiconductors due to their excellent material properties, such as wide forbidden band width, excellent electrical and thermal conductivity, high critical breakdown electric field, and high ultimate operating temperature. The AlGaN/GaN heterojunction can generate two-dimensional electron gas with high density and high mobility at an interface by virtue of self spontaneous and piezoelectric polarization effects, and is widely applied to devices such as HEMTs, rectifiers and the like. However, since single crystal GaN substrates are difficult to obtain, the growth of GaN materials relies on heteroepitaxial techniques. The advantages of large size and low cost of the Si substrate make it the first choice for GaN heteroepitaxy. On the other hand, N-polar group III nitrides have opposite polarization directions compared to conventional metallic polar materials, and thus may exhibit better two-dimensional electron confinement in GaN/AlGaN heterojunctions. In addition, the overlying GaN layer can form higher quality ohmic contacts. However, the current research on group III nitride materials has focused on metallic polar materials, and there has been less research on N-polar materials.
Disclosure of Invention
In view of this, the present invention provides an N-polarity GaN/AlGaN heterojunction epitaxial structure and a method for manufacturing the same, which can realize a high-efficiency power electronic device.
The invention aims to provide an N-polarity GaN/AlGaN heterojunction epitaxial structure.
The second purpose of the invention is to provide a preparation method of the N-polarity GaN/AlGaN heterojunction epitaxial structure.
The first purpose of the invention can be achieved by adopting the following technical scheme:
an N-polarity GaN/AlGaN heterojunction epitaxial structure comprises a low-temperature N-polarity AlN buffer layer, a non-doped N-polarity AlGaN layer and a non-doped N-polarity GaN layer which are sequentially grown on a silicon substrate.
Furthermore, the undoped N-polarity AlGaN buffer layer is a stepping buffer layer and sequentially comprises undoped N-polarity Al from bottom to topxGa1-xN layer and non-doped N polar AlyGa1-yAnd N layers, wherein x is 0.5-0.6, and y is 0.3-0.35.
Further, the non-doped N-polar AlxGa1-xThe thickness of the N layer is 200-300 nm, and the non-doped N polarity AlyGa1-yThe thickness of the N layer is 300-400 nm.
Furthermore, the Al component of the non-doped N-polarity AlGaN layer is 0.15-0.20, and the thickness is 350-400 nm.
Furthermore, the thickness of the low-temperature N-polarity AlN buffer layer is 200-250 nm.
Further, the thickness of the non-doped N-polarity GaN layer is 30-50 nm.
Further, the silicon substrate is a Si (111) substrate.
The second purpose of the invention can be achieved by adopting the following technical scheme:
a method of fabricating an N-polar GaN/AlGaN heterojunction epitaxial structure, the method comprising:
pretreating a silicon substrate;
growing an N-polarity AlN buffer layer on the silicon substrate by adopting a pulse laser deposition technology;
transferring the epitaxial wafer with the N-polarity AlN buffer layer grown on the silicon substrate into metal organic chemical vapor deposition equipment, and introducing NH into the chamber3、N2、H2And trimethylaluminum, growing a non-doped N-polarity AlGaN buffer layer on the N-polarity AlN buffer layer;
after the growth of the non-doped N-polarity AlGaN buffer layer is finished, adjusting the flow of trimethylaluminum, and growing a non-doped N-polarity AlGaN layer on the non-doped N-polarity AlGaN buffer layer;
stopping introducing the trimethylaluminum and the H after the growth of the non-doped N-polarity AlGaN layer is completed2And growing a non-doped N-polarity GaN layer on the non-doped N-polarity AlGaN layer so as to prepare the N-polarity GaN/AlGaN heterojunction epitaxial structure.
Further, the growing of the undoped N-polarity AlGaN buffer layer on the N-polarity AlN buffer layer specifically includes:
in the above-mentionedGrowing non-doped N-polar Al on the N-polar AlN buffer layerxGa1-xN layers;
in the non-doped N-polar AlxGa1-xGrowing non-doped N-polar Al on the N layeryGa1-yN layers;
wherein x is 0.5 to 0.6, and y is 0.3 to 0.35.
Further, the silicon substrate is a Si (111) substrate.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention adopts the N polarity GaN/AlGaN heterojunction as the device functional layer, and has the following advantages compared with the traditional metal polarity AlGaN/GaN heterojunction: the N-polarity AlGaN layer is used as a natural back barrier, so that the two-dimensional electron gas confinement property can be enhanced; when the structure is applied to device preparation, metal is directly connected with the GaN channel layer on the top layer, and good ohmic contact can be formed.
2. According to the invention, the III-group nitride epitaxial layer is grown by adopting a two-step growth method combining low-temperature PLD and high-temperature MOCVD, on one hand, the low temperature in the PLD process can inhibit the interface reaction between the III-group nitride/the substrate, and prevent the generation of corresponding defects; on the other hand, the high-temperature MOCVD technology can promote lateral overgrowth of group III nitride and annihilation of dislocation. By combining the two, a high-quality group III nitride epitaxial material can be obtained.
3. The invention carries out integral design on an N-polarity GaN/AlGaN heterojunction epitaxial structure: stress caused by lattice mismatch is gradually released from bottom to top by the sequence of Si, AlN, multi-layer AlGaN with changed components and GaN, dislocation is reduced, and high-quality GaN/AlGaN heterojunction suitable for preparing devices such as HEMT, rectifier and the like can be obtained by a simple process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic view of an N-polar GaN/AlGaN hetero-epitaxial structure according to an embodiment of the present invention.
FIG. 2 is a GaN (0002) X-ray rocking curve test chart of the N-polar GaN/AlGaN epitaxial film of the embodiment of the present invention.
FIG. 3 is a surface atomic force microscope image of an N-polar GaN/AlGaN epitaxial thin film according to an embodiment of the present invention.
In fig. 1:
1-silicon substrate, 2-low-temperature N polarity AlN buffer layer, 3-non-doped N polarity AlxGa1-xN layer, 4-undoped N polar AlyGa1-yThe GaN-based light-emitting diode comprises an N layer, a 5-undoped N polarity AlGaN layer and a 6-undoped N polarity GaN layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer and more complete, the technical solutions in the embodiments of the present invention will be described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments, and all other embodiments obtained by a person of ordinary skill in the art without creative efforts based on the embodiments of the present invention belong to the protection scope of the present invention. It should be understood that the description of the specific embodiments is intended to be illustrative only and is not intended to be limiting.
Example 1:
the embodiment provides a preparation method of an N-polarity GaN/AlGaN heterojunction epitaxial structure, which specifically comprises the following steps:
(1) substrate pretreatment: si (111) is used as the substrate for epitaxial growth, and H is firstly used2SO4、H2O2And H2Treating in mixed solution of O in the proportion of H2SO4:H2O2:H2Sequentially putting the substrate into acetone and absolute ethyl alcohol, respectively ultrasonically cleaning for 5min, taking out the substrate, and drying by using high-purity nitrogen;
(2) low temperature N-polar AlN buffer layer epitaxial growth: placing the pretreated substrate into a cavity by Pulsed Laser Deposition (PLD) technique, and vacuumizing to pressure less than 1.0 × 10-6torr, the substrate was first annealed at 800 ℃ for 30min under nitrogen rich atmosphere, and then heated to 550 ℃ to grow the N-polar AlN buffer layer. In the growth process, the laser energy density is 2.8Jcm-2The laser frequency is 25 Hz;
(3) and (3) epitaxially growing a non-doped N-polarity AlGaN buffer layer: and (3) transferring the epitaxial wafer obtained in the step (2) to Metal Organic Chemical Vapor Deposition (MOCVD) equipment for subsequent growth. Vacuumizing to the pressure less than 1.0X 10-6torr, growing non-doped N polarity AlGaN buffer layer at 950 ℃, and introducing trimethylaluminum and trimethylgallium NH simultaneously3、H2、N2. In the above growth process, the pressure in the reaction chamber is 100torr, NH3The flow rate is 40 slm; during the growth of the two buffer layers, the flow rate of trimethyl aluminum is 350sccm and 180sccm in sequence, and the flow rate of trimethyl gallium is 300-350 sccm and 500-750 sccm in sequence;
(4) and (3) epitaxially growing a non-doped N-polar AlGaN layer: continuing the process in the step (3), and adjusting the flow rate of the trimethylaluminum to 100 sccm;
(5) and (3) epitaxial growth of the non-doped N-polar GaN layer: stopping introducing the trimethylaluminum and the H after the step (4) is finished2And growing an undoped N-polarity GaN layer at 770-800 ℃. In the above growth process, the pressure in the reaction chamber is 100torr, the flow rate of trimethyl gallium is 600sccm, NH3The flow rate was 40 slm.
As shown in fig. 1, the N-polar GaN/AlGaN heterojunction epitaxial structure prepared in this embodiment includes a low-temperature N-polar AlN buffer layer 2, a non-doped N-polar AlGaN buffer layer, a non-doped N-polar AlGaN layer 5, and a non-doped N-polar GaN layer 6 that sequentially grow on a silicon substrate 1, wherein:
the silicon substrate is a Si (111) substrate;
the thickness of the undoped N-polarity AlN buffer layer is 200 nm;
the thickness of the undoped N-polar AlGaN buffer layer comprises undoped N-polar AlxGa1-xN layer 3 and non-doped N-polar AlyGa1-yN layer 4, wherein: non-doped N-polar AlxGa1-xThickness of N layerIs 200nm, and is undoped with N polar AlyGa1-yThe thickness of the N layer is 300nm, x is 0.5, and y is 0.3;
the Al component of the non-doped N-polarity AlGaN layer is 0.15, and the thickness is 400 nm;
the thickness of the undoped N-polar GaN layer was 30 nm.
As shown in FIG. 2, the film had an X-ray rocking curve full width at half maximum of 0.099 ℃ at the GaN (0002) plane, indicating that the film had good crystal quality; as shown in FIG. 3, the root mean square roughness of the surface of the film is 0.4nm and the surface of the film is smooth and flat as characterized by an atomic force microscope.
Example 2:
the embodiment provides a method for preparing an N-polarity GaN/AlGaN heterojunction epitaxial structure, which specifically includes:
(1) substrate pretreatment: si (111) is used as the substrate for epitaxial growth, and H is firstly used2SO4、H2O2And H2Treating in mixed solution of O in the proportion of H2SO4:H2O2:H2Sequentially putting the substrate into acetone and absolute ethyl alcohol, carrying out ultrasonic cleaning for 10min respectively, taking out the substrate, and drying the substrate by using high-purity nitrogen;
(2) and (3) low-temperature N-polarity AlN buffer layer epitaxial growth: adopting PLD technology, placing the pretreated substrate into a cavity, vacuumizing until the air pressure is less than 1.0 × 10-6torr, the substrate was first annealed at 800 ℃ for 30min under a nitrogen-rich atmosphere, and then heated to 630 ℃ for growth of an N-polar AlN buffer layer. In the growth process, the laser energy density is 3.2Jcm-2The laser frequency is 35 Hz;
(3) and (3) epitaxially growing a non-doped N-polarity AlGaN buffer layer: and (3) transferring the epitaxial wafer obtained in the step (2) to MOCVD equipment for subsequent growth. Vacuumizing to the pressure less than 1.0X 10-6torr, growing non-doped N polarity AlGaN buffer layer at 1000 deg.C while introducing trimethylaluminum and trimethylgallium NH3、H2、N2. In the above growth process, the pressure in the reaction chamber is 120torr, NH3The flow rate is 60 slm; during the growth of the two buffer layers, the flow rate of trimethyl aluminum is 400sccm and 220sccm in sequence, and the flow rate of trimethyl gallium350sccm and 750sccm in sequence;
(4) and (3) epitaxially growing a non-doped N-polar AlGaN layer: continuing the process in the step (3), and adjusting the flow rate of the trimethylaluminum to 150 sccm;
(5) and (3) epitaxial growth of the non-doped N-polar GaN layer: stopping introducing the trimethylaluminum and the H after the step (4) is finished2And growing the non-doped N-polarity GaN layer at 800 ℃. In the above growth process, the pressure in the reaction chamber is 120torr, the flow rate of trimethyl gallium is 800sccm, NH3The flow rate was 60 slm.
As shown in fig. 1, the N-polarity GaN/AlGaN heterojunction epitaxial structure on the silicon substrate prepared in this embodiment includes a low-temperature N-polarity AlN buffer layer 2, a non-doped N-polarity AlGaN buffer layer, a non-doped N-polarity AlGaN layer 5, and a non-doped N-polarity GaN layer 6, which sequentially grow on the silicon substrate 1, wherein:
the silicon substrate is a Si (111) substrate;
the thickness of the undoped N-polarity AlN buffer layer is 250 nm;
the thickness of the undoped N-polar AlGaN buffer layer comprises undoped N-polar AlxGa1-xN layer 3 and non-doped N-polar AlyGa1-yN layer 4, wherein: non-doped N-polar AlxGa1-xThe thickness of the N layer is 300nm, and the N layer is not doped with N polar AlyGa1-yThe thickness of the N layer is 400nm, x is 0.6, and y is 0.35;
the Al component of the non-doped N-polarity AlGaN layer is 0.20, and the thickness is 400 nm;
the thickness of the undoped N-polar GaN layer was 50 nm.
The test result of the N-polarity GaN/AlGaN heterojunction epitaxial structure prepared in this embodiment is similar to that in embodiment 1, and is not repeated here.
In summary, the invention provides an N-polarity GaN/AlGaN heterojunction epitaxial structure, which includes a low-temperature N-polarity AlN buffer layer, a non-doped N-polarity AlGaN layer, and a non-doped N-polarity GaN layer sequentially grown on a silicon substrate, and also provides a method for preparing the N-polarity GaN/AlGaN heterojunction epitaxial structure, so as to realize a high-quality N-polarity GaN/AlGaN heterojunction epitaxial structure, which is expected to realize high-performance GaN-based HEMTs, rectifiers, and other devices.
The above description is only for the preferred embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can substitute or change the technical solution and the inventive concept of the present invention within the scope of the present invention.

Claims (10)

1. An N-polarity GaN/AlGaN heterojunction epitaxial structure is characterized by comprising a low-temperature N-polarity AlN buffer layer, a non-doped N-polarity AlGaN layer and a non-doped N-polarity GaN layer which are sequentially grown on a silicon substrate.
2. The N-polar GaN/AlGaN heterojunction epitaxial structure according to claim 1, wherein the undoped N-polar AlGaN buffer layer is a step buffer layer, and the undoped N-polar AlGaN buffer layer sequentially includes undoped N-polar Al from bottom to topxGa1-xN layer and non-doped N polar AlyGa1-yAnd N layers, wherein x is 0.5-0.6, and y is 0.3-0.35.
3. The N-polar GaN/AlGaN heterojunction epitaxial structure according to claim 2, wherein the undoped N-polar AlxGa1-xThe thickness of the N layer is 200-300 nm, and the non-doped N polarity AlyGa1-yThe thickness of the N layer is 300-400 nm.
4. The N-polar GaN/AlGaN heterojunction epitaxial structure according to claim 1, wherein the non-doped N-polar AlGaN layer has an Al composition of 0.15 to 0.20 and a thickness of 350 to 400 nm.
5. The N-polar GaN/AlGaN heterojunction epitaxial structure according to claim 1, wherein the thickness of the low-temperature N-polar AlN buffer layer is 200-250 nm.
6. The N-polar GaN/AlGaN heterojunction epitaxial structure according to claim 1, wherein the thickness of the undoped N-polar GaN layer is 30-50 nm.
7. The N-polar GaN/AlGaN heterojunction epitaxial structure according to any one of claims 1 to 6, wherein the silicon substrate is a Si (111) substrate.
8. A method for preparing an N-polar GaN/AlGaN heterojunction epitaxial structure according to any one of claims 1 to 7, comprising the steps of:
pretreating a silicon substrate;
growing an N-polarity AlN buffer layer on the silicon substrate by adopting a pulse laser deposition technology;
transferring the epitaxial wafer with the N-polarity AlN buffer layer grown on the silicon substrate into metal organic chemical vapor deposition equipment, and introducing NH into the chamber3、N2、H2And trimethylaluminum, growing a non-doped N-polarity AlGaN buffer layer on the N-polarity AlN buffer layer;
after the growth of the non-doped N-polarity AlGaN buffer layer is finished, adjusting the flow of trimethylaluminum, and growing a non-doped N-polarity AlGaN layer on the non-doped N-polarity AlGaN buffer layer;
stopping introducing the trimethylaluminum and the H after the growth of the non-doped N-polarity AlGaN layer is completed2And growing a non-doped N-polarity GaN layer on the non-doped N-polarity AlGaN layer so as to prepare the N-polarity GaN/AlGaN heterojunction epitaxial structure.
9. The preparation method according to claim 8, wherein growing a non-doped N-polar AlGaN buffer layer on the N-polar AlN buffer layer specifically comprises:
growing non-doped N-polarity Al on the N-polarity AlN buffer layerxGa1-xN layers;
in the non-doped N-polar AlxGa1-xGrowing non-doped N-polar Al on the N layeryGa1-yN layers;
wherein x is 0.5 to 0.6, and y is 0.3 to 0.35.
10. The production method according to claim 8, wherein the silicon substrate is a Si (111) substrate.
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