WO2019119589A1 - N-polar plane high-frequency gan rectifier epitaxial structure on silicon substrate and manufacturing method therefor - Google Patents

N-polar plane high-frequency gan rectifier epitaxial structure on silicon substrate and manufacturing method therefor Download PDF

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WO2019119589A1
WO2019119589A1 PCT/CN2018/072856 CN2018072856W WO2019119589A1 WO 2019119589 A1 WO2019119589 A1 WO 2019119589A1 CN 2018072856 W CN2018072856 W CN 2018072856W WO 2019119589 A1 WO2019119589 A1 WO 2019119589A1
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polar
layer
polar plane
gan
undoped
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王文樑
李国强
李筱婵
李媛
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华南理工大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H01L29/66219—Diodes with a heterojunction, e.g. resonant tunneling diodes [RTD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes

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  • the invention relates to a GaN rectifier, in particular to an N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate and a preparation method thereof.
  • the III-nitride material represented by GaN is a hot spot material for a new generation of high-frequency rectifiers. Due to its wide band gap, excellent electrical and thermal conductivity, high critical breakdown electric field, high limit operating temperature and other excellent material properties, It is considered to be the most likely strategic material for miniaturization and integration of rectifier devices. However, due to the existence of the two-dimensional electron limit threshold of the conventional GaN rectifier, the influence of the internal polarization field of the device, the growth of high-quality AlGaN/GaN heterojunction, and the difficulty in preparing enhanced devices, the GaN rectifier is limited in high frequency. The development and application of energy transmission.
  • N-polar surface Group III nitride materials The preparation process of N-polar surface Group III nitride materials is becoming more and more mature, and the advantages of N-polar materials are increasingly prominent, which was once regarded as a perfect substitute for traditional metal-polar III-nitride materials. Since the N-polar surface Group III nitride material has an opposite built-in electric field direction, a more active surface state, a better two-dimensional electron gas threshold threshold and is easier to process than a conventional metal polar surface III nitride. The outstanding advantages of enhanced devices make the development of N-polar surface III-nitride rectifying devices become the current real-time hotspot.
  • an object of the present invention is to provide an N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate, which has high device sensitivity and high-frequency operation of the device.
  • Another object of the present invention is to provide a method for fabricating an epitaxial structure of an N-polar plane high frequency GaN rectifier on the above silicon substrate.
  • N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate including an undoped N-polar GaN buffer layer, a carbon-doped N-polar GaN layer, and an undoped N-polarity sequentially grown on a silicon substrate
  • a surface Al x Ga 1-x N layer, an undoped N-polar plane AlN insertion layer, an undoped N-polar plane GaN layer, and an N-polar InGaN layer; wherein x 0.3 to 0.8.
  • the non-doped N polar surface composition has a thickness of 650-680 nm of the graded Al y Ga 1-y N buffer layer.
  • the carbon-doped N-polar GaN layer has a thickness of 80 to 180 nm and a doping concentration of 5.9 ⁇ 10 18 to 5.0 ⁇ 10 19 cm -3 .
  • the undoped N-polar plane Al x Ga 1-x N layer has a thickness of 300-450 nm.
  • the undoped N-polar surface AlN insertion layer has a thickness of 2-15 nm.
  • the undoped N-polar GaN layer has a thickness of 500 to 1500 nm.
  • the undoped N-polar InGaN layer has a thickness of 80-150 nm.
  • the method for preparing an N-polar plane high-frequency GaN rectifier epitaxial structure on the silicon substrate comprises the following steps:
  • the silicon substrate is sequentially placed in three mediums of acetone, absolute ethanol and deionized water, followed by ultrasonic cleaning for 5-15 minutes, taken out, rinsed with deionized water and blown with hot high-purity nitrogen.
  • Non-doped N-polar surface AlN buffer layer epitaxial growth using a pulsed laser deposition process, the clean substrate is placed in a vacuum chamber, the substrate temperature is raised to 420-500 ° C, the cavity vacuum Pumped to 2.0 ⁇ 10 -4 -4.0 ⁇ 10 -4 torr, laser energy is 250-320mJ, laser frequency is 15-30Hz, nitrogen flow rate is 2-10sccm, N-polar AlN film is grown under N-rich condition, Al source is AlN high purity ceramic target;
  • Undoped N-polar surface composition graded Al y Ga 1-y N buffer layer epitaxial growth MOCVD technology was used to place the prepared N-polar AlN sample into the growth chamber, and the chamber vacuum was drawn to 2.0 ⁇ 10 -6 -4.0 ⁇ 10 -6 torr, the temperature is raised to 950-1000 ° C, and NH 3 , N 2 , H 2 , CH 4 , trimethyl aluminum are introduced into the chamber, and obtained in step (3) Epitaxially grown epitaxially grown non-doped N-polar surface composition graded Al y Ga 1-y N layer; in the vapor deposition, the chamber pressure is 180-220 torr, NH 3 , N 2 , H 2 , CH 4 , III The flow rate of methyl aluminum is 30-50slm, 60-100slm, 15-24slm, 400-450sccm, respectively;
  • Non-N-polarized surface AlN insertion layer growth after the MOCVD completion step (6) film growth, the trimethylgallium and N 2 gas path supply is turned off, and the temperature of the cavity is raised to 1000-1100 ° C and An N-polar surface AlN insertion layer was epitaxially grown by introducing NH 3 , H 2 and trimethylaluminum into the chamber.
  • the vapor deposition chamber gas pressure is 180-220 torr, and the NH 3 , H 2 , and trimethyl aluminum flow rates are 30-50 slm, 10-20 slm, and 350-440 sccm, respectively;
  • the present invention has the following advantages and benefits:
  • the present invention functionally designs the epitaxial structure of the rectifier, and inserts a very thin N-polar AlN film at the AlGaN/GaN heterojunction interface to effectively increase the two-dimensional electron gas concentration at the interface of the AlGaN/GaN heterojunction.
  • a metal polar InGaN layer is grown on the surface of the GaN channel layer, and the internal polarization electric field of the AlGaN/GaN heterojunction is modulated by the introduction of the opposite polarization electric field, thereby effectively reducing the two-dimensional electron gas threshold at the interface of AlGaN/GaN.
  • the present invention uses an N-polar Group III nitride as a device base material, which can effectively increase the two-dimensional electron gas threshold threshold of the AlGaN/GaN heterojunction interface compared to the conventional metal polar surface III nitride material. Effectively improve the gate control characteristics of the device and effectively reduce the processing difficulty of subsequent devices.
  • the invention adopts pulse laser deposition combined with MOCVD low temperature combined with high temperature two-step method to grow the material required for the device, can effectively suppress the remelting etching reaction of the group III nitride and the silicon substrate at high temperature, and effectively reduce the MOCVD growth.
  • the parasitic pre-reaction existing in the AlN process adversely affects the growth of the epitaxial structure of the subsequent device.
  • FIG. 1 is a schematic view showing an epitaxial structure of an N-polar plane high frequency GaN rectifier on a grown silicon substrate of the present invention.
  • Figure 2 is an in situ RHEED picture during the growth of an N-polar AlN film.
  • FIG. 3 is a test chart of an X-ray rocking curve of an N-polar GaN (0002) film.
  • the N-polar plane high-frequency GaN rectifier epitaxial structure on the silicon substrate of the present embodiment includes an undoped N-polar plane GaN buffer layer (including N-polarity) sequentially grown on the silicon substrate 1.
  • the silicon substrate is sequentially placed in three mediums of acetone, absolute ethanol and deionized water, ultrasonically washed for 5 min in sequence, taken out, rinsed with deionized water and blown dry with hot high-purity nitrogen;
  • Non-N-polarized surface AlN insertion layer growth After the MOCVD completion step (6) film growth, the trimethylgallium and N 2 gas path supply is turned off, the temperature of the cavity is raised to 1050 ° C and the chamber is moved. An N-polar surface AlN intercalation layer was epitaxially grown by passing NH 3 , H 2 and trimethylaluminum. The vapor deposition chamber gas pressure is 200 torr, and the NH 3 , H 2 , and trimethyl aluminum flow rates are 40 slm, 12 slm, and 400 sccm, respectively;
  • the epitaxial structure of the above-mentioned grown GaN rectifier is shown in Fig. 1.
  • the GaN film is grown in the epitaxial structure grown under the growth condition. It is an N-polar GaN film.
  • the X-ray rocking curve of the film on the GaN (0001) plane has a full width at half maximum of 0.094°, and the film crystal quality is good (see Fig. 3).
  • the silicon substrate is sequentially placed in three mediums of acetone, absolute ethanol and deionized water, ultrasonically washed for 5 min in sequence, taken out, rinsed with deionized water and blown dry with hot high-purity nitrogen;
  • Undoped N-polar surface composition graded Al y Ga 1-y N buffer layer epitaxial growth MOCVD technology was used to place the prepared N-polar AlN sample into the growth chamber, and the chamber vacuum was drawn to 2.0 ⁇ 10 -6 torr, the temperature is raised to 950 ° C, and NH 3 , N 2 , H 2 , CH 4 , trimethyl aluminum is introduced into the chamber, and the epitaxial wafer obtained in the step (3) is epitaxially grown on the epitaxial wafer.
  • the polar surface composition is graded into an Al y Ga 1-y N layer; in the vapor deposition, the reaction chamber pressure is 180 torr, and the flow rates of NH 3 , N 2 , H 2 , CH 4 , and trimethyl aluminum are 30 slm, 60 slm, and 15 slm, respectively. , 400sccm;
  • Non-N-polarized surface AlN insertion layer growth After the MOCVD completion step (6) film growth, the trimethylgallium and N 2 gas path supply is turned off, the cavity temperature is raised to 1000 ° C and the chamber is moved. An N-polar surface AlN intercalation layer was epitaxially grown by passing NH 3 , H 2 and trimethylaluminum. The vapor deposition chamber gas pressure is 180 torr, and the flow rates of NH 3 , H 2 and trimethyl aluminum are respectively 30 slm, 10 slm, 350 sccm;
  • the thickness of the hetero N-polar plane GaN buffer layer is 600 nm; and the thickness of the undoped N-polar plane AlN buffer layer is 140 nm.
  • the non-doped N polar face composition graded the Al y Ga 1-y N buffer layer to a thickness of 650 nm.
  • the carbon-doped N-polar GaN layer has a thickness of 80 nm and a doping concentration of 5.9 ⁇ 10 18 cm ⁇ 3 .
  • test results of the epitaxial structure of the N-polar plane high-frequency GaN rectifier on the silicon substrate prepared in this embodiment are similar to those in Embodiment 1, and are not described herein again.
  • the silicon substrate is sequentially placed in three mediums of acetone, absolute ethanol and deionized water, ultrasonically washed for 15 min in sequence, taken out, rinsed with deionized water and blown dry with hot high-purity nitrogen;
  • the polar surface composition is graded into an Al y Ga 1-y N layer; in the vapor deposition, the reaction chamber pressure is 220 torr, and the flow rates of NH 3 , N 2 , H 2 , CH 4 , and trimethyl aluminum are 35 slm, 100 slm, and 24 slm, respectively. , 450sccm;
  • Non-N-polarized surface AlN insertion layer growth After the MOCVD completion step (6) film growth, the trimethylgallium and N 2 gas path supply is turned off, the cavity temperature is raised to 1100 ° C and the chamber is moved. An N-polar surface AlN intercalation layer was epitaxially grown by passing NH 3 , H 2 and trimethylaluminum. The vapor deposition chamber gas pressure is 220 torr, and the flow rates of NH 3 , H 2 and trimethyl aluminum are respectively 50 slm, 20 slm, 440 sccm;
  • the thickness of the hetero N-polar plane GaN buffer layer is 800 nm; the thickness of the undoped N-polar plane AlN buffer layer is 220 nm.
  • the non-doped N polar surface composition graded the Al y Ga 1-y N buffer layer to a thickness of 680 nm.
  • the carbon-doped N-polar GaN layer has a thickness of 180 nm and a doping concentration of 5.0 ⁇ 10 19 cm ⁇ 3 .
  • test results of the epitaxial structure of the N-polar plane high-frequency GaN rectifier on the silicon substrate prepared in this embodiment are similar to those in Embodiment 1, and are not described herein again.

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Abstract

An N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate, comprising non-doped N-polar plane GaN buffer layers (2, 3), a carbon-doped N-polar GaN layer (4), a non-doped N-polar plane AlxGa1-xN layer(5), a non-doped N-polar plane AIN insertion layer (6), a non-doped N-polar plane GaN layer (7), and an N-polar InGaN layer (8) that grow in sequence on a silicon substrate (1), wherein x＝0.3-0.8; and a manufacturing method for the N-polar plane high-frequency GaN rectifier epitaxial structure on the silicon substrate. The N-polar plane high-frequency GaN rectifier epitaxial structure on the silicon substrate may improve the quality of an AlxGa1-xN/GaN heterojunction interface, effectively improve the high-frequency performance of subsequently prepared GaN rectifiers, and effectively reduce the difficulty in preparing enhanced devices.

Description

一种硅衬底上N极性面高频GaN整流器外延结构及其制备方法N-polar plane high-frequency GaN rectifier epitaxial structure on silicon substrate and preparation method thereof 技术领域Technical field
本发明涉及GaN整流器，特别涉及一种硅衬底上N极性面高频GaN整流器外延结构及其制备方法。The invention relates to a GaN rectifier, in particular to an N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate and a preparation method thereof.
背景技术Background technique
以GaN为代表的III族氮化物材料是新一代高频整流器的热点材料，由于其较宽的禁带宽度、优异的导电导热特性、高临界击穿电场、高极限工作温度等优良材料特性，被视为最有可能实现整流器件小型化与集成化的战略材料。然而由于传统GaN整流器外延结构存在器件二维电子限阈性不强、材料内部极化电场影响、高质量AlGaN/GaN异质结生长困难、难以制备增强型器件等原因限制了GaN整流器在高频传能方面的发展与应用。N极性面III族氮化物材料制备工艺的日渐成熟，N极性材料的优点日渐凸显，被一度视为传统金属极性III族氮化物材料的完美替代。由于N极性面III族氮化物材料相比于传统金属极性面III族氮化物具有相反的内建电场方向、更活泼的表面状态、更好的二维电子气限阈性且更易于加工增强型器件等突出优势，使得N极性面III族氮化物整流器件的研制成为目前的实时热点。The III-nitride material represented by GaN is a hot spot material for a new generation of high-frequency rectifiers. Due to its wide band gap, excellent electrical and thermal conductivity, high critical breakdown electric field, high limit operating temperature and other excellent material properties, It is considered to be the most likely strategic material for miniaturization and integration of rectifier devices. However, due to the existence of the two-dimensional electron limit threshold of the conventional GaN rectifier, the influence of the internal polarization field of the device, the growth of high-quality AlGaN/GaN heterojunction, and the difficulty in preparing enhanced devices, the GaN rectifier is limited in high frequency. The development and application of energy transmission. The preparation process of N-polar surface Group III nitride materials is becoming more and more mature, and the advantages of N-polar materials are increasingly prominent, which was once regarded as a perfect substitute for traditional metal-polar III-nitride materials. Since the N-polar surface Group III nitride material has an opposite built-in electric field direction, a more active surface state, a better two-dimensional electron gas threshold threshold and is easier to process than a conventional metal polar surface III nitride. The outstanding advantages of enhanced devices make the development of N-polar surface III-nitride rectifying devices become the current real-time hotspot.
发明内容Summary of the invention
为了克服现有技术的上述缺点与不足，本发明的目的在于提供一种硅衬底上N极性面高频GaN整流器外延结构，器件工作灵敏度高，实现器件高频工作。In order to overcome the above disadvantages and disadvantages of the prior art, an object of the present invention is to provide an N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate, which has high device sensitivity and high-frequency operation of the device.
本发明的另一目的在于提供上述硅衬底上N极性面高频GaN整流器外延结构的制备方法。Another object of the present invention is to provide a method for fabricating an epitaxial structure of an N-polar plane high frequency GaN rectifier on the above silicon substrate.
本发明的目的通过以下技术方案实现：The object of the invention is achieved by the following technical solutions:
硅衬底上N极性面高频GaN整流器外延结构，包括在硅衬底上依次生长的非掺杂N极性面GaN缓冲层、碳掺杂N极性GaN层、非掺杂N极性面Al xGa 1-xN层、非掺杂N极性面AlN插入层、非掺杂N极性面GaN层、N极性InGaN层；其中x＝0.3～0.8。 N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate, including an undoped N-polar GaN buffer layer, a carbon-doped N-polar GaN layer, and an undoped N-polarity sequentially grown on a silicon substrate A surface Al x Ga 1-x N layer, an undoped N-polar plane AlN insertion layer, an undoped N-polar plane GaN layer, and an N-polar InGaN layer; wherein x = 0.3 to 0.8.
所述非掺杂N极性面GaN缓冲层包括非掺杂N极性面AlN缓冲层和非掺 杂N极性面组分渐变Al yGa 1-yN缓冲层；所述非掺杂N极性面组分渐变Al yGa 1-yN缓冲层生长在非掺杂N极性面AlN缓冲层上面，非掺杂N极性面AlN缓冲层生长在硅衬底上；y＝0.15～0.45；所述非掺杂N极性面GaN缓冲层的厚度为600-800nm；所述非掺杂N极性面AlN缓冲层的厚度为140-220nm。 The non-doped N-polar plane GaN buffer layer includes an undoped N-polar plane AlN buffer layer and a non-doped N-polar surface composition graded Al y Ga 1-y N buffer layer; the undoped N The polar surface composition graded Al y Ga 1-y N buffer layer is grown on the undoped N-polar plane AlN buffer layer, and the undoped N-polar plane AlN buffer layer is grown on the silicon substrate; y=0.15~ 0.45; the non-doped N-polar plane GaN buffer layer has a thickness of 600-800 nm; and the non-doped N-polar plane AlN buffer layer has a thickness of 140-220 nm.
所述非掺杂N极性面组分渐变Al yGa 1-yN缓冲层的厚度650-680nm。 The non-doped N polar surface composition has a thickness of 650-680 nm of the graded Al y Ga 1-y N buffer layer.
碳掺杂N极性GaN层的厚度为80-180nm，掺杂浓度为5.9×10 18～5.0×10 19cm -3。 The carbon-doped N-polar GaN layer has a thickness of 80 to 180 nm and a doping concentration of 5.9 × 10 18 to 5.0 × 10 19 cm -3 .
所述非掺杂N极性面Al xGa 1-xN层的厚度为300-450nm。 The undoped N-polar plane Al x Ga 1-x N layer has a thickness of 300-450 nm.
所述非掺杂N极性面AlN插入层的厚度为2-15nm。The undoped N-polar surface AlN insertion layer has a thickness of 2-15 nm.
所述非掺杂N极性面GaN层的厚度为500-1500nm。The undoped N-polar GaN layer has a thickness of 500 to 1500 nm.
所述非掺杂N极性InGaN层厚度为80-150nm。The undoped N-polar InGaN layer has a thickness of 80-150 nm.
所述的硅衬底上N极性面高频GaN整流器外延结构的制备方法，包括以下步骤：The method for preparing an N-polar plane high-frequency GaN rectifier epitaxial structure on the silicon substrate comprises the following steps:
(1)衬底及其晶向的选取：采用单晶硅衬底，以Si(111)密排面为外延面，以
Figure PCTCN2018072856-appb-000001
方向作为材料外延生长方向； (1) Selection of substrate and crystal orientation: a single crystal silicon substrate is used, and the Si (111) close-packed surface is used as an epitaxial surface to
Figure PCTCN2018072856-appb-000001
The direction is used as a material epitaxial growth direction;
(2)衬底表面清洗：将硅衬底依次放入丙酮、无水乙醇、去离子水三种介质中，依次超声清洗5-15min，取出后用去离子水冲洗并使用热高纯氮气吹干；(3)非掺杂N极性面AlN缓冲层外延生长：采用脉冲激光沉积工艺，将洁净衬底放入真空室中，将衬底温度升高至420-500℃，腔体内真空度抽至2.0×10 -4-4.0×10 -4torr，激光能量为250-320mJ，激光频率为15-30Hz，氮气流量为2-10sccm，富N条件下生长N极性AlN薄膜，Al源为AlN高纯陶瓷靶材； (2) Cleaning of the substrate surface: The silicon substrate is sequentially placed in three mediums of acetone, absolute ethanol and deionized water, followed by ultrasonic cleaning for 5-15 minutes, taken out, rinsed with deionized water and blown with hot high-purity nitrogen. (3) Non-doped N-polar surface AlN buffer layer epitaxial growth: using a pulsed laser deposition process, the clean substrate is placed in a vacuum chamber, the substrate temperature is raised to 420-500 ° C, the cavity vacuum Pumped to 2.0×10 -4 -4.0×10 -4 torr, laser energy is 250-320mJ, laser frequency is 15-30Hz, nitrogen flow rate is 2-10sccm, N-polar AlN film is grown under N-rich condition, Al source is AlN high purity ceramic target;
(4)非掺杂N极性面组分渐变Al yGa 1-yN缓冲层外延生长：采用MOCVD技术，将已制备N极性AlN样品放入生长腔室内，将腔室真空度抽至2.0×10 -6-4.0×10 -6torr，温度升至950-1000℃，并向腔室内通入NH 3、N 2、H 2、CH 4、三甲基铝，在步骤(3)得到的外延片上外延生长非掺杂N极性面成分渐变Al yGa 1-yN层；所述气相沉积中，反应室气压为180-220torr，NH 3、N 2、H 2、CH 4、三甲基铝流量分别为30-50slm、60-100slm、15-24slm、400-450sccm； (4) Undoped N-polar surface composition graded Al y Ga 1-y N buffer layer epitaxial growth: MOCVD technology was used to place the prepared N-polar AlN sample into the growth chamber, and the chamber vacuum was drawn to 2.0×10 -6 -4.0×10 -6 torr, the temperature is raised to 950-1000 ° C, and NH 3 , N 2 , H 2 , CH 4 , trimethyl aluminum are introduced into the chamber, and obtained in step (3) Epitaxially grown epitaxially grown non-doped N-polar surface composition graded Al y Ga 1-y N layer; in the vapor deposition, the chamber pressure is 180-220 torr, NH 3 , N 2 , H 2 , CH 4 , III The flow rate of methyl aluminum is 30-50slm, 60-100slm, 15-24slm, 400-450sccm, respectively;
(5)碳掺杂N极性GaN层外延生长：在MOCVD中完成步骤(7)膜层生长后，关闭三甲基铝与H 2的气路，将腔体温度降为770-800℃并向腔室内通入NH 3、N 2、CH 4、三甲基镓，在外延片上原位生长碳掺杂N极性面GaN层。所述气相沉积中反应室气压为180-240torr，NH 3、N 2、CH 4、三甲基镓流量分别为20-50slm、60-90slm、120-150sccm、450-520sccm； (5) Epitaxial growth of carbon-doped N-polar GaN layer: After completing the step (7) film growth in MOCVD, the gas path of trimethylaluminum and H 2 is turned off, and the temperature of the cavity is lowered to 770-800 ° C and NH 3 , N 2 , CH 4 , and trimethyl gallium were introduced into the chamber, and a carbon-doped N-polar GaN layer was grown in situ on the epitaxial wafer. The gas pressure in the reaction chamber is 180-240 torr, and the flow rates of NH 3 , N 2 , CH 4 and trimethyl gallium are respectively 20-50 slm, 60-90 slm, 120-150 sccm, 450-520 sccm;
(6)非掺杂N极性面Al xGa 1-xN层外延生长：采用与步骤(4)相同的工艺条件，通过调整三甲基铝流量与生长温度调控膜层Al组分变化； (6) Undoped N-polar plane Al x Ga 1-x N layer epitaxial growth: using the same process conditions as in step (4), adjusting the Al composition change of the film layer by adjusting the flow rate of trimethylaluminum and the growth temperature;
(7)非掺N极性面AlN插入层生长：在MOCVD完成步骤(6)膜层生长后，关闭三甲基镓和N 2气路供应，将腔体温度升至1000-1100℃并向腔室内通入NH 3、H 2和三甲基铝，外延生长N极性面AlN插入层。所述气相沉积腔体气压为180-220torr，NH 3、H 2、三甲基铝流量分别为30-50slm、10-20slm、350-440sccm； (7) Non-N-polarized surface AlN insertion layer growth: after the MOCVD completion step (6) film growth, the trimethylgallium and N 2 gas path supply is turned off, and the temperature of the cavity is raised to 1000-1100 ° C and An N-polar surface AlN insertion layer was epitaxially grown by introducing NH 3 , H 2 and trimethylaluminum into the chamber. The vapor deposition chamber gas pressure is 180-220 torr, and the NH 3 , H 2 , and trimethyl aluminum flow rates are 30-50 slm, 10-20 slm, and 350-440 sccm, respectively;
(8)非掺杂N极性面GaN层外延生长：在步骤(5)工艺基础上，关闭腔室内CH 4供应，并将NH 3、N 2、三甲基镓流量分别为50-80slm、60-80slm、500-750sccm； (8) Epitaxial growth of the undoped N-polar plane GaN layer: on the basis of the step (5) process, the CH 4 supply in the chamber is closed, and the flow rates of NH 3 , N 2 and trimethyl gallium are respectively 50-80 slm, 60-80 slm, 500-750 sccm;
(9)非掺杂N极性面InGaN层外延生长：在MOCVD中完成步骤(8)膜层生长后，将生长温度降为740～760℃，通入NH 3、N 2、三甲基镓和三甲基铟，外延生长N极性面InGaN层；所述气相沉积中腔体气压为180-220torr，NH 3、N 2、三甲基镓和三甲基铟流量分别为30-50slm、55-80slm、100-150sccm、500-750sccm。 (9) Epitaxial growth of undoped N-polar plane InGaN layer: After the step (8) film growth is completed in MOCVD, the growth temperature is lowered to 740-760 ° C, and NH 3 , N 2 , and trimethyl gallium are introduced. And trimethyl indium, epitaxially growing an N-polar plane InGaN layer; the gas pressure in the vapor deposition is 180-220 torr, and the flow rates of NH 3 , N 2 , trimethyl gallium and trimethyl indium are respectively 30-50 slm, 55-80 slm, 100-150 sccm, 500-750 sccm.
与现有技术相比，本发明具有以下优点和有益效果：Compared with the prior art, the present invention has the following advantages and benefits:
(1)本发明对整流器外延结构进行功能性设计，在AlGaN/GaN异质结界面插入一层极薄N极性AlN薄膜，有效增大AlGaN/GaN异质结界面处二维电子气浓度，在GaN沟道层表面生长金属极性InGaN层，通过相反极化电场的引入对AlGaN/GaN异质结内部极化电场进行调制，有效降低AlGaN/GaN界面处二维电子气限阈性。(1) The present invention functionally designs the epitaxial structure of the rectifier, and inserts a very thin N-polar AlN film at the AlGaN/GaN heterojunction interface to effectively increase the two-dimensional electron gas concentration at the interface of the AlGaN/GaN heterojunction. A metal polar InGaN layer is grown on the surface of the GaN channel layer, and the internal polarization electric field of the AlGaN/GaN heterojunction is modulated by the introduction of the opposite polarization electric field, thereby effectively reducing the two-dimensional electron gas threshold at the interface of AlGaN/GaN.
(2)本发明使用N极性III族氮化物作为器件基础材料，相比于传统金属极性面III族氮化物材料，能够有效增加AlGaN/GaN异质结界面二维电子气限阈性，有效提高器件栅控特性并有效降低后续器件加工难度。(2) The present invention uses an N-polar Group III nitride as a device base material, which can effectively increase the two-dimensional electron gas threshold threshold of the AlGaN/GaN heterojunction interface compared to the conventional metal polar surface III nitride material. Effectively improve the gate control characteristics of the device and effectively reduce the processing difficulty of subsequent devices.
(3)本发明采用脉冲激光沉积结合MOCVD的低温结合高温两步法生长器件所需材料，可有效抑制III族氮化物与硅衬底在高温下存在的回熔刻蚀反应，有效降低MOCVD生长AlN过程中存在的寄生预反应对后续器件外延结构生长带来的不利影响。(3) The invention adopts pulse laser deposition combined with MOCVD low temperature combined with high temperature two-step method to grow the material required for the device, can effectively suppress the remelting etching reaction of the group III nitride and the silicon substrate at high temperature, and effectively reduce the MOCVD growth. The parasitic pre-reaction existing in the AlN process adversely affects the growth of the epitaxial structure of the subsequent device.
附图说明DRAWINGS
图1是本发明生长硅衬底上N极性面高频GaN整流器外延结构示意图。1 is a schematic view showing an epitaxial structure of an N-polar plane high frequency GaN rectifier on a grown silicon substrate of the present invention.
图2是N极性AlN薄膜生长过程中的原位RHEED图片。Figure 2 is an in situ RHEED picture during the growth of an N-polar AlN film.
图3是N极性GaN(0002)薄膜X射线摇摆曲线测试图。3 is a test chart of an X-ray rocking curve of an N-polar GaN (0002) film.
具体实施方式Detailed ways
下面结合实施例，对本发明作进一步地详细说明，但本发明的实施方式不限于此。The present invention will be further described in detail below with reference to the embodiments, but the embodiments of the present invention are not limited thereto.
实施例1Example 1
如图1所示，本实施例的硅衬底上N极性面高频GaN整流器外延结构，包括在硅衬底1上依次生长的非掺杂N极性面GaN缓冲层(包括N极性面GaN缓冲层包括非掺杂N极性面AlN缓冲层2和非掺杂N极性面组分渐变Al yGa 1-yN缓冲层3)、碳掺杂N极性GaN层4、非掺杂N极性面Al xGa 1-xN层5、非掺杂N极性面AlN插入层6、非掺杂N极性面GaN层7、N极性InGaN层8；其中x＝0.3，y＝0.15～0.45。 As shown in FIG. 1, the N-polar plane high-frequency GaN rectifier epitaxial structure on the silicon substrate of the present embodiment includes an undoped N-polar plane GaN buffer layer (including N-polarity) sequentially grown on the silicon substrate 1. The surface GaN buffer layer includes an undoped N-polar plane AlN buffer layer 2 and an undoped N-polar surface composition graded Al y Ga 1-y N buffer layer 3), a carbon-doped N-polar GaN layer 4, Doped N-polar plane Al x Ga 1-x N layer 5, undoped N-polar plane AlN insertion layer 6, undoped N-polar plane GaN layer 7, N-polar InGaN layer 8; where x = 0.3 , y = 0.15 to 0.45.
本实施例的非掺杂N极性面GaN缓冲层为750nm，其中非掺杂N极性面AlN缓冲层厚度为150nm，非掺杂N极性面组分渐变Al yGa 1-yN(由下往上y＝0.35，0.18)缓冲层厚度为650nm；所述碳掺杂N极性面GaN层厚度为80nm；所述非掺杂N极性面Al xGa 1-xN(x＝0.3)层厚度为300nm；所述非掺杂N极性面AlN插入层厚度为15nm；所述非掺杂N极性面GaN层厚度为1500nm；所述N极性InGaN层厚度为80nm。 The undoped N-polar plane GaN buffer layer of this embodiment is 750 nm, wherein the undoped N-polar plane AlN buffer layer has a thickness of 150 nm, and the undoped N-polar plane composition is graded by Al y Ga 1-y N ( From bottom to top y=0.35, 0.18) the buffer layer thickness is 650 nm; the carbon doped N polar plane GaN layer has a thickness of 80 nm; the undoped N polar plane Al x Ga 1-x N (x= 0.3) a layer thickness of 300 nm; a thickness of the undoped N-polar plane AlN insertion layer of 15 nm; a thickness of the undoped N-polar plane GaN layer of 1500 nm; and a thickness of the N-polar InGaN layer of 80 nm.
本实施例的硅衬底上N极性面高频GaN整流器外延结构的制备方法如下：The preparation method of the N-polar plane high-frequency GaN rectifier epitaxial structure on the silicon substrate of the present embodiment is as follows:
(1)衬底及其晶向的选取：采用单晶硅衬底，以Si(111)密排面为外延面，以
Figure PCTCN2018072856-appb-000002
方向作为材料外延生长方向； (1) Selection of substrate and crystal orientation: a single crystal silicon substrate is used, and the Si (111) close-packed surface is used as an epitaxial surface to
Figure PCTCN2018072856-appb-000002
The direction is used as a material epitaxial growth direction;
(2)衬底表面清洗：将硅衬底依次放入丙酮、无水乙醇、去离子水三种介质中，依次超声清洗5min，取出后用去离子水冲洗并使用热高纯氮气吹干；(2) Surface cleaning of the substrate: the silicon substrate is sequentially placed in three mediums of acetone, absolute ethanol and deionized water, ultrasonically washed for 5 min in sequence, taken out, rinsed with deionized water and blown dry with hot high-purity nitrogen;
(3)非掺杂N极性面AlN缓冲层外延生长：采用脉冲激光沉积工艺，将洁净衬底放入真空室中，将衬底温度升高至450℃，腔体内真空度抽至2.0×10 -4torr，激光能量为300mJ，激光频率为15Hz，氮气流量为4sccm，富N条件下生长N极性AlN薄膜，Al源为AlN高纯陶瓷靶材； (3) Epitaxial growth of undoped N-polar plane AlN buffer layer: using a pulsed laser deposition process, the clean substrate is placed in a vacuum chamber, the substrate temperature is raised to 450 ° C, and the vacuum in the cavity is drawn to 2.0 × 10 -4 torr, laser energy is 300mJ, laser frequency is 15Hz, nitrogen flow rate is 4sccm, N-polar AlN film is grown under N-rich condition, and Al source is AlN high-purity ceramic target;
(4)非掺杂N极性面组分渐变Al yGa 1-yN缓冲层外延生长：采用MOCVD技术，将已制备N极性AlN样品放入生长腔室内，将腔室真空度抽至3.0×10 -6torr，温度升至980℃，并向腔室内通入NH 3、N 2、H 2、CH 4、三甲基铝，步骤(3)得到的外延片上外延生长非掺杂N极性面成分渐变Al yGa 1-yN层(由下往上，y＝0.35,0.18)；所述气相沉积中，反应室气压为200torr，NH 3、N 2、H 2、CH 4、 三甲基铝流量分别为40/20slm(当y＝0.35时，流量为40slm；当y＝0.18时，流量为20slm)、70slm、17slm、440sccm； (4) Undoped N-polar surface composition graded Al y Ga 1-y N buffer layer epitaxial growth: MOCVD technology was used to place the prepared N-polar AlN sample into the growth chamber, and the chamber vacuum was drawn to 3.0×10 -6 torr, the temperature is raised to 980 ° C, and NH 3 , N 2 , H 2 , CH 4 , trimethyl aluminum are introduced into the chamber, and the epitaxial wafer obtained in the step (3) is epitaxially grown on the epitaxial wafer. The polar surface component is graded Al y Ga 1-y N layer (from bottom to top, y=0.35, 0.18); in the vapor deposition, the reaction chamber pressure is 200 torr, NH 3 , N 2 , H 2 , CH 4 , The flow rate of trimethylaluminum is 40/20 slm (when y=0.35, the flow rate is 40 slm; when y=0.18, the flow rate is 20 slm), 70 slm, 17 slm, 440 sccm;
(5)碳掺杂N极性GaN层外延生长：在MOCVD中完成步骤(4)膜层生长后，关闭三甲基铝与H 2的气路，将腔体温度降为780℃并向腔室内通入NH 3、N 2、CH 4、三甲基镓，在外延片上原位生长碳掺杂N极性面GaN层。所述气相沉积中反应室气压为200torr，NH 3、N 2、CH 4、三甲基镓流量分别为40slm、70slm、135sccm、500sccm； (5) Epitaxial growth of carbon-doped N-polar GaN layer: After completing the step (4) film growth in MOCVD, the gas path of trimethylaluminum and H 2 is turned off, and the temperature of the cavity is lowered to 780 ° C and directed to the cavity. A carbon-doped N-polar GaN layer is grown in-situ on the epitaxial wafer by introducing NH 3 , N 2 , CH 4 , and trimethyl gallium indoors. The gas pressure in the reaction chamber is 200 torr, and the flow rates of NH 3 , N 2 , CH 4 and trimethyl gallium are respectively 40 slm, 70 slm, 135 sccm, 500 sccm;
(6)非掺杂N极性面Al xGa 1-xN层外延生长：采用与步骤(4)相同的工艺条件，通过调整三甲基铝流量与生长温度调控膜层Al组分变化； (6) Undoped N-polar plane Al x Ga 1-x N layer epitaxial growth: using the same process conditions as in step (4), adjusting the Al composition change of the film layer by adjusting the flow rate of trimethylaluminum and the growth temperature;
(7)非掺N极性面AlN插入层生长：在MOCVD完成步骤(6)膜层生长后，关闭三甲基镓和N 2气路供应，将腔体温度升至1050℃并向腔室内通入NH 3、H 2和三甲基铝，外延生长N极性面AlN插入层。所述气相沉积腔体气压为200torr，NH 3、H 2、三甲基铝流量分别为40slm、12slm、400sccm； (7) Non-N-polarized surface AlN insertion layer growth: After the MOCVD completion step (6) film growth, the trimethylgallium and N 2 gas path supply is turned off, the temperature of the cavity is raised to 1050 ° C and the chamber is moved. An N-polar surface AlN intercalation layer was epitaxially grown by passing NH 3 , H 2 and trimethylaluminum. The vapor deposition chamber gas pressure is 200 torr, and the NH 3 , H 2 , and trimethyl aluminum flow rates are 40 slm, 12 slm, and 400 sccm, respectively;
(8)非掺杂N极性面GaN层外延生长：在步骤(5)工艺基础上，关闭腔室内CH 4供应，并将NH 3、N 2、三甲基镓流量分别为60slm、70slm、700sccm； (8) Epitaxial growth of the undoped N-polar plane GaN layer: on the basis of the step (5) process, the CH 4 supply in the chamber is closed, and the flow rates of NH 3 , N 2 and trimethyl gallium are respectively 60 slm, 70 slm, 700sccm;
(9)非掺杂N极性面InGaN层外延生长：在MOCVD中完成步骤(8)膜层生长后，将生长温度降为740～760℃，通入NH 3、N 2、三甲基镓和三甲基铟，外延生长N极性面InGaN层。所述气相沉积中腔体气压为200torr，NH 3、N 2、三甲基镓和三甲基铟流量分别为40slm、60slm、120sccm、500sccm。 (9) Epitaxial growth of undoped N-polar plane InGaN layer: After the step (8) film growth is completed in MOCVD, the growth temperature is lowered to 740-760 ° C, and NH 3 , N 2 , and trimethyl gallium are introduced. And trimethylindium, epitaxially growing an N-polar plane InGaN layer. The gas pressure in the vapor deposition was 200 torr, and the flow rates of NH 3 , N 2 , trimethyl gallium, and trimethyl indium were 40 slm, 60 slm, 120 sccm, and 500 sccm, respectively.
上述生长的GaN整流器外延结构示意图如图1所示，其中，通过生长过程中原位高能电子束衍射图(如图2所示)，可看出，该生长条件下生长的外延结构中，GaN薄膜为N极性GaN薄膜。且该薄膜在GaN(0001)面上的X射线摇摆曲线半高宽值为0.094°，薄膜晶体质量良好(见图3)。The epitaxial structure of the above-mentioned grown GaN rectifier is shown in Fig. 1. Among them, by the in-situ high-energy electron beam diffraction pattern during growth (as shown in Fig. 2), it can be seen that the GaN film is grown in the epitaxial structure grown under the growth condition. It is an N-polar GaN film. Moreover, the X-ray rocking curve of the film on the GaN (0001) plane has a full width at half maximum of 0.094°, and the film crystal quality is good (see Fig. 3).
实施例2Example 2
本实施例的硅衬底上N极性面高频GaN整流器外延结构的制备方法如下：The preparation method of the N-polar plane high-frequency GaN rectifier epitaxial structure on the silicon substrate of the present embodiment is as follows:
(1)衬底及其晶向的选取：采用单晶硅衬底，以Si(111)密排面为外延面，以
Figure PCTCN2018072856-appb-000003
方向作为材料外延生长方向； (1) Selection of substrate and crystal orientation: a single crystal silicon substrate is used, and the Si (111) close-packed surface is used as an epitaxial surface to
Figure PCTCN2018072856-appb-000003
The direction is used as a material epitaxial growth direction;
(2)衬底表面清洗：将硅衬底依次放入丙酮、无水乙醇、去离子水三种介质中，依次超声清洗5min，取出后用去离子水冲洗并使用热高纯氮气吹干；(2) Surface cleaning of the substrate: the silicon substrate is sequentially placed in three mediums of acetone, absolute ethanol and deionized water, ultrasonically washed for 5 min in sequence, taken out, rinsed with deionized water and blown dry with hot high-purity nitrogen;
(3)非掺杂N极性面AlN缓冲层外延生长：采用脉冲激光沉积工艺，将洁净衬底放入真空室中，将衬底温度升高至420℃，腔体内真空度抽至 2.0×10 -4torr，激光能量为250mJ，激光频率为15Hz，氮气流量为2sccm，富N条件下生长N极性AlN薄膜，Al源为AlN高纯陶瓷靶材； (3) Epitaxial growth of undoped N-polar plane AlN buffer layer: using a pulsed laser deposition process, the clean substrate is placed in a vacuum chamber, the substrate temperature is raised to 420 ° C, and the vacuum in the cavity is drawn to 2.0 × 10 -4 torr, laser energy is 250mJ, laser frequency is 15Hz, nitrogen flow rate is 2sccm, N-polar AlN film is grown under N-rich condition, and Al source is AlN high-purity ceramic target;
(4)非掺杂N极性面组分渐变Al yGa 1-yN缓冲层外延生长：采用MOCVD技术，将已制备N极性AlN样品放入生长腔室内，将腔室真空度抽至2.0×10 -6torr，温度升至950℃，并向腔室内通入NH 3、N 2、H 2、CH 4、三甲基铝，步骤(3)得到的外延片上外延生长非掺杂N极性面成分渐变Al yGa 1-yN层；所述气相沉积中，反应室气压为180torr，NH 3、N 2、H 2、CH 4、三甲基铝流量分别为30slm、60slm、15slm、400sccm； (4) Undoped N-polar surface composition graded Al y Ga 1-y N buffer layer epitaxial growth: MOCVD technology was used to place the prepared N-polar AlN sample into the growth chamber, and the chamber vacuum was drawn to 2.0×10 -6 torr, the temperature is raised to 950 ° C, and NH 3 , N 2 , H 2 , CH 4 , trimethyl aluminum is introduced into the chamber, and the epitaxial wafer obtained in the step (3) is epitaxially grown on the epitaxial wafer. The polar surface composition is graded into an Al y Ga 1-y N layer; in the vapor deposition, the reaction chamber pressure is 180 torr, and the flow rates of NH 3 , N 2 , H 2 , CH 4 , and trimethyl aluminum are 30 slm, 60 slm, and 15 slm, respectively. , 400sccm;
(5)碳掺杂N极性GaN层外延生长：在MOCVD中完成步骤(4)膜层生长后，关闭三甲基铝与H 2的气路，将腔体温度降为770℃并向腔室内通入NH 3、N 2、CH 4、三甲基镓，在外延片上原位生长碳掺杂N极性面GaN层。所述气相沉积中反应室气压为180torr，NH 3、N 2、CH 4、三甲基镓流量分别为30slm、60slm、120sccm、450sccm； (5) Epitaxial growth of carbon-doped N-polar GaN layer: After completing the step (4) film growth in MOCVD, the gas path of trimethylaluminum and H 2 is turned off, and the temperature of the cavity is lowered to 770 ° C and directed to the cavity. A carbon-doped N-polar GaN layer is grown in-situ on the epitaxial wafer by introducing NH 3 , N 2 , CH 4 , and trimethyl gallium indoors. The gas pressure in the reaction chamber is 180 torr, and the flow rates of NH 3 , N 2 , CH 4 and trimethyl gallium are respectively 30 slm, 60 slm, 120 sccm, 450 sccm;
(6)非掺杂N极性面Al xGa 1-xN层外延生长：采用与步骤(4)相同的工艺条件，通过调整三甲基铝流量与生长温度调控膜层Al组分变化； (6) Undoped N-polar plane Al x Ga 1-x N layer epitaxial growth: using the same process conditions as in step (4), adjusting the Al composition change of the film layer by adjusting the flow rate of trimethylaluminum and the growth temperature;
(7)非掺N极性面AlN插入层生长：在MOCVD完成步骤(6)膜层生长后，关闭三甲基镓和N 2气路供应，将腔体温度升至1000℃并向腔室内通入NH 3、H 2和三甲基铝，外延生长N极性面AlN插入层。所述气相沉积腔体气压为180torr，NH 3、H 2、三甲基铝流量分别为30slm、10slm、350sccm； (7) Non-N-polarized surface AlN insertion layer growth: After the MOCVD completion step (6) film growth, the trimethylgallium and N 2 gas path supply is turned off, the cavity temperature is raised to 1000 ° C and the chamber is moved. An N-polar surface AlN intercalation layer was epitaxially grown by passing NH 3 , H 2 and trimethylaluminum. The vapor deposition chamber gas pressure is 180 torr, and the flow rates of NH 3 , H 2 and trimethyl aluminum are respectively 30 slm, 10 slm, 350 sccm;
(8)非掺杂N极性面GaN层外延生长：在步骤(5)工艺基础上，关闭腔室内CH 4供应，并将NH 3、N 2、三甲基镓流量分别为50slm、60slm、500sccm； (8) Epitaxial growth of the undoped N-polar plane GaN layer: on the basis of the step (5) process, the CH 4 supply in the chamber is closed, and the flow rates of NH 3 , N 2 and trimethyl gallium are respectively 50 slm, 60 slm, 500sccm;
(9)非掺杂N极性面InGaN层外延生长：在MOCVD中完成步骤(8)膜层生长后，将生长温度降为740℃，通入NH 3、N 2、三甲基镓和三甲基铟，外延生长N极性面InGaN层；所述气相沉积中腔体气压为180torr，NH 3、N 2、三甲基镓和三甲基铟流量分别为30slm、55slm、100sccm、520sccm。 (9) Epitaxial growth of undoped N-polar plane InGaN layer: After the step (8) film growth is completed in MOCVD, the growth temperature is lowered to 740 ° C, and NH 3 , N 2 , trimethyl gallium and three are introduced. Methyl indium, epitaxially growing an N-polar plane InGaN layer; the gas pressure in the vapor deposition is 180 torr, and the flow rates of NH 3 , N 2 , trimethyl gallium, and trimethyl indium are 30 slm, 55 slm, 100 sccm, and 520 sccm, respectively.
本实施例制备得到的硅衬底上N极性面高频GaN整流器外延结构，包括在硅衬底上依次生长的非掺杂N极性面GaN缓冲层、碳掺杂N极性GaN层、非掺杂N极性面Al xGa 1-xN层、非掺杂N极性面AlN插入层、非掺杂N极性面GaN层、N极性InGaN层；其中x＝0.4。所述N极性面GaN缓冲层包括非掺杂N极性面AlN缓冲层和非掺杂N极性面组分渐变Al yGa 1-yN缓冲层；所述非掺杂N极性面组分渐变Al yGa 1-yN缓冲层在非掺杂N极性面AlN缓冲层上面，非掺杂N极性面AlN缓冲层生长在硅衬底上；y＝0.45；所述非掺杂N极性面GaN 缓冲层的厚度为600nm；所述非掺杂N极性面AlN缓冲层的厚度为140nm。所述非掺杂N极性面组分渐变Al yGa 1-yN缓冲层的厚度650nm。所述碳掺杂N极性GaN层的厚度为80nm，掺杂浓度为5.9×10 18cm -3。 The N-polar plane high-frequency GaN rectifier epitaxial structure on the silicon substrate prepared in this embodiment comprises an undoped N-polar plane GaN buffer layer, a carbon-doped N-polar GaN layer sequentially grown on a silicon substrate, An undoped N-polar plane Al x Ga 1-x N layer, an undoped N-polar plane AlN insertion layer, an undoped N-polar plane GaN layer, an N-polar InGaN layer; wherein x=0.4. The N-polar plane GaN buffer layer includes an undoped N-polar plane AlN buffer layer and a non-doped N-polar surface composition graded Al y Ga 1-y N buffer layer; the undoped N-polar plane a compositionally graded Al y Ga 1-y N buffer layer on the undoped N-polar plane AlN buffer layer, and an undoped N-polar plane AlN buffer layer on the silicon substrate; y=0.45; The thickness of the hetero N-polar plane GaN buffer layer is 600 nm; and the thickness of the undoped N-polar plane AlN buffer layer is 140 nm. The non-doped N polar face composition graded the Al y Ga 1-y N buffer layer to a thickness of 650 nm. The carbon-doped N-polar GaN layer has a thickness of 80 nm and a doping concentration of 5.9×10 18 cm −3 .
本实施例制备的硅衬底上N极性面高频GaN整流器外延结构测试结果与实施例1类似，在此不再赘述。The test results of the epitaxial structure of the N-polar plane high-frequency GaN rectifier on the silicon substrate prepared in this embodiment are similar to those in Embodiment 1, and are not described herein again.
实施例3Example 3
(1)衬底及其晶向的选取：采用单晶硅衬底，以Si(111)密排面为外延面，以
Figure PCTCN2018072856-appb-000004
方向作为材料外延生长方向； (1) Selection of substrate and crystal orientation: a single crystal silicon substrate is used, and the Si (111) close-packed surface is used as an epitaxial surface to
Figure PCTCN2018072856-appb-000004
The direction is used as a material epitaxial growth direction;
(2)衬底表面清洗：将硅衬底依次放入丙酮、无水乙醇、去离子水三种介质中，依次超声清洗15min，取出后用去离子水冲洗并使用热高纯氮气吹干；(2) Surface cleaning of the substrate: the silicon substrate is sequentially placed in three mediums of acetone, absolute ethanol and deionized water, ultrasonically washed for 15 min in sequence, taken out, rinsed with deionized water and blown dry with hot high-purity nitrogen;
(3)非掺杂N极性面AlN缓冲层外延生长：采用脉冲激光沉积工艺，将洁净衬底放入真空室中，将衬底温度升高至500℃，腔体内真空度抽至4.0×10 -4torr，激光能量为320mJ，激光频率为0Hz，氮气流量为10sccm，富N条件下生长N极性AlN薄膜，Al源为AlN高纯陶瓷靶材； (3) Epitaxial growth of undoped N-polar plane AlN buffer layer: using a pulsed laser deposition process, the clean substrate is placed in a vacuum chamber, the substrate temperature is raised to 500 ° C, and the vacuum in the cavity is drawn to 4.0 × 10 -4 torr, laser energy is 320mJ, laser frequency is 0Hz, nitrogen flow rate is 10sccm, N-polar AlN film is grown under N-rich condition, and Al source is AlN high-purity ceramic target;
(4)非掺杂N极性面组分渐变Al yGa 1-yN缓冲层外延生长：采用MOCVD技术，将已制备N极性AlN样品放入生长腔室内，将腔室真空度抽至4.0×10 -6torr，温度升至1000℃，并向腔室内通入NH 3、N 2、H 2、CH 4、三甲基铝，步骤(3)得到的外延片上外延生长非掺杂N极性面成分渐变Al yGa 1-yN层；所述气相沉积中，反应室气压为220torr，NH 3、N 2、H 2、CH 4、三甲基铝流量分别为35slm、100slm、24slm、450sccm； (4) Undoped N-polar surface composition graded Al y Ga 1-y N buffer layer epitaxial growth: MOCVD technology was used to place the prepared N-polar AlN sample into the growth chamber, and the chamber vacuum was drawn to 4.0×10 -6 torr, the temperature is raised to 1000 ° C, and NH 3 , N 2 , H 2 , CH 4 , trimethyl aluminum is introduced into the chamber, and the epitaxial wafer obtained in the step (3) is epitaxially grown on the epitaxial wafer. The polar surface composition is graded into an Al y Ga 1-y N layer; in the vapor deposition, the reaction chamber pressure is 220 torr, and the flow rates of NH 3 , N 2 , H 2 , CH 4 , and trimethyl aluminum are 35 slm, 100 slm, and 24 slm, respectively. , 450sccm;
(5)碳掺杂N极性GaN层外延生长：在MOCVD中完成步骤(6)膜层生长后，关闭三甲基铝与H 2的气路，将腔体温度降为800℃并向腔室内通入NH 3、N 2、CH 4、三甲基镓，在外延片上原位生长碳掺杂N极性面GaN层。所述气相沉积中反应室气压为240torr，NH 3、N 2、CH 4、三甲基镓流量分别为50slm、90slm、150sccm、520sccm； (5) Epitaxial growth of carbon-doped N-polar GaN layer: After completing the step (6) film growth in MOCVD, the gas path of trimethylaluminum and H 2 is turned off, the temperature of the cavity is lowered to 800 ° C and the cavity is A carbon-doped N-polar GaN layer is grown in-situ on the epitaxial wafer by introducing NH 3 , N 2 , CH 4 , and trimethyl gallium indoors. The gas pressure in the reaction chamber is 240 torr, and the flow rates of NH 3 , N 2 , CH 4 and trimethyl gallium are respectively 50 slm, 90 slm, 150 sccm, 520 sccm;
(6)非掺杂N极性面Al xGa 1-xN层外延生长：采用与步骤(4)相同的工艺条件，通过调整三甲基铝流量与生长温度调控膜层Al组分变化； (6) Undoped N-polar plane Al x Ga 1-x N layer epitaxial growth: using the same process conditions as in step (4), adjusting the Al composition change of the film layer by adjusting the flow rate of trimethylaluminum and the growth temperature;
(7)非掺N极性面AlN插入层生长：在MOCVD完成步骤(6)膜层生长后，关闭三甲基镓和N 2气路供应，将腔体温度升至1100℃并向腔室内通入NH 3、H 2和三甲基铝，外延生长N极性面AlN插入层。所述气相沉积腔体气压为220torr，NH 3、H 2、三甲基铝流量分别为50slm、20slm、440sccm； (7) Non-N-polarized surface AlN insertion layer growth: After the MOCVD completion step (6) film growth, the trimethylgallium and N 2 gas path supply is turned off, the cavity temperature is raised to 1100 ° C and the chamber is moved. An N-polar surface AlN intercalation layer was epitaxially grown by passing NH 3 , H 2 and trimethylaluminum. The vapor deposition chamber gas pressure is 220 torr, and the flow rates of NH 3 , H 2 and trimethyl aluminum are respectively 50 slm, 20 slm, 440 sccm;
(8)非掺杂N极性面GaN层外延生长：在步骤(5)工艺基础上，关闭腔室内CH 4供应，并将NH 3、N 2、三甲基镓流量分别为80slm、80slm、750sccm； (8) Epitaxial growth of the undoped N-polar plane GaN layer: on the basis of the step (5) process, the CH 4 supply in the chamber is closed, and the flow rates of NH 3 , N 2 and trimethyl gallium are respectively 80 slm, 80 slm, 750sccm;
(9)非掺杂N极性面InGaN层外延生长：在MOCVD中完成步骤(8)膜层生长后，将生长温度降为760℃，通入NH 3、N 2、三甲基镓和三甲基铟，外延生长N极性面InGaN层；所述气相沉积中腔体气压为220torr，NH 3、N 2、三甲基镓和三甲基铟流量分别为50slm、80slm、150sccm、540sccm。 (9) Epitaxial growth of undoped N-polar plane InGaN layer: After the step (8) film growth is completed in MOCVD, the growth temperature is lowered to 760 ° C, and NH 3 , N 2 , trimethyl gallium and three are introduced. Methyl indium, epitaxially growing an N-polar plane InGaN layer; the gas pressure in the vapor deposition is 220 torr, and the flow rates of NH 3 , N 2 , trimethyl gallium, and trimethyl indium are 50 slm, 80 slm, 150 sccm, and 540 sccm, respectively.
本实施例制备得到的硅衬底上N极性面高频GaN整流器外延结构，包括在硅衬底上依次生长的非掺杂N极性面GaN缓冲层、碳掺杂N极性GaN层、非掺杂N极性面Al xGa 1-xN层、非掺杂N极性面AlN插入层、非掺杂N极性面GaN层、N极性InGaN层；其中x＝0.55。所述N极性面GaN缓冲层包括非掺杂N极性面AlN缓冲层和非掺杂N极性面组分渐变Al yGa 1-yN缓冲层；所述非掺杂N极性面组分渐变Al yGa 1-yN缓冲层在非掺杂N极性面AlN缓冲层上面，非掺杂N极性面AlN缓冲层生长在硅衬底上；y＝0.2；所述非掺杂N极性面GaN缓冲层的厚度为800nm；所述非掺杂N极性面AlN缓冲层的厚度为220nm。所述非掺杂N极性面组分渐变Al yGa 1-yN缓冲层的厚度680nm。所述碳掺杂N极性GaN层的厚度为180nm，掺杂浓度为5.0×10 19cm -3。 The N-polar plane high-frequency GaN rectifier epitaxial structure on the silicon substrate prepared in this embodiment comprises an undoped N-polar plane GaN buffer layer, a carbon-doped N-polar GaN layer sequentially grown on a silicon substrate, An undoped N-polar plane Al x Ga 1-x N layer, an undoped N-polar plane AlN insertion layer, an undoped N-polar plane GaN layer, an N-polar InGaN layer; wherein x=0.55. The N-polar plane GaN buffer layer includes an undoped N-polar plane AlN buffer layer and a non-doped N-polar surface composition graded Al y Ga 1-y N buffer layer; the undoped N-polar plane a compositionally graded Al y Ga 1-y N buffer layer on the undoped N-polar plane AlN buffer layer, and an undoped N-polar plane AlN buffer layer on the silicon substrate; y=0.2; The thickness of the hetero N-polar plane GaN buffer layer is 800 nm; the thickness of the undoped N-polar plane AlN buffer layer is 220 nm. The non-doped N polar surface composition graded the Al y Ga 1-y N buffer layer to a thickness of 680 nm. The carbon-doped N-polar GaN layer has a thickness of 180 nm and a doping concentration of 5.0×10 19 cm −3 .
本实施例制备的硅衬底上N极性面高频GaN整流器外延结构测试结果与实施例1类似，在此不再赘述。The test results of the epitaxial structure of the N-polar plane high-frequency GaN rectifier on the silicon substrate prepared in this embodiment are similar to those in Embodiment 1, and are not described herein again.
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受所述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the embodiments, and any other changes, modifications, substitutions, and combinations may be made without departing from the spirit and scope of the present invention. And simplifications, all of which are equivalent replacement means, are included in the scope of protection of the present invention.

Claims (9)

  1. 硅衬底上N极性面高频GaN整流器外延结构，其特征在于，包括在硅衬底上依次生长的非掺杂N极性面GaN缓冲层、碳掺杂N极性GaN层、非掺杂N极性面Al xGa 1-xN层、非掺杂N极性面AlN插入层、非掺杂N极性面GaN层和N极性InGaN层；其中x＝0.3～0.8。 An N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate, comprising: an undoped N-polar GaN buffer layer sequentially grown on a silicon substrate, a carbon-doped N-polar GaN layer, and a non-doped a hetero-N-polar plane Al x Ga 1-x N layer, an undoped N-polar plane AlN intercalation layer, an undoped N-polar plane GaN layer, and an N-polar InGaN layer; wherein x = 0.3 to 0.8.
  2. 根据权利要求1所述的硅衬底上N极性面高频GaN整流器外延结构，其特征在于，所述非掺杂N极性面GaN缓冲层包括非掺杂N极性面AlN缓冲层和非掺杂N极性面组分渐变Al yGa 1-yN缓冲层；所述非掺杂N极性面组分渐变Al yGa 1-yN缓冲层生长在非掺杂N极性面AlN缓冲层上面，非掺杂N极性面AlN缓冲层生长在硅衬底上；y＝0.15～0.45；所述非掺杂N极性面GaN缓冲层的厚度为600-800nm；所述非掺杂N极性面AlN缓冲层的厚度为140-220nm。 The N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate according to claim 1, wherein the undoped N-polar plane GaN buffer layer comprises an undoped N-polar plane AlN buffer layer and a non-doped N-polar surface composition graded Al y Ga 1-y N buffer layer; the non-doped N-polar surface composition graded Al y Ga 1-y N buffer layer is grown on an undoped N-polar plane Above the AlN buffer layer, the undoped N-polar plane AlN buffer layer is grown on the silicon substrate; y=0.15-0.45; the non-doped N-polar plane GaN buffer layer has a thickness of 600-800 nm; The thickness of the doped N-polar plane AlN buffer layer is 140-220 nm.
  3. 根据权利要求1所述的硅衬底上N极性面高频GaN整流器外延结构，其特征在于，所述非掺杂N极性面组分渐变Al yGa 1-yN缓冲层的厚度650-680nm。 The N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate according to claim 1, wherein the non-doped N-polar surface composition has a thickness of 650 of a graded Al y Ga 1-y N buffer layer. -680nm.
  4. 根据权利要求1所述的硅衬底上N极性面高频GaN整流器外延结构，其特征在于，碳掺杂N极性GaN层的厚度为80-180nm，掺杂浓度为5.9×10 18～5.0×10 19cm -3。 The N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate according to claim 1, wherein the carbon-doped N-polar GaN layer has a thickness of 80-180 nm and a doping concentration of 5.9×10 18 ～ 5.0×10 19 cm -3 .
  5. 根据权利要求1所述的硅衬底上N极性面高频GaN整流器外延结构，其特征在于，所述非掺杂N极性面Al xGa 1-xN层的厚度为300-450nm。 The N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate according to claim 1, wherein the undoped N-polar plane Al x Ga 1-x N layer has a thickness of 300-450 nm.
  6. 根据权利要求1所述的硅衬底上N极性面高频GaN整流器外延结构，其特征在于，所述非掺杂N极性面AlN插入层的厚度为2-15nm。The N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate according to claim 1, wherein the non-doped N-polar plane AlN insertion layer has a thickness of 2-15 nm.
  7. 根据权利要求1所述的硅衬底上N极性面高频GaN整流器外延结构，其特征在于，所述非掺杂N极性面GaN层的厚度为500-1500nm。The N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate according to claim 1, wherein the undoped N-polar plane GaN layer has a thickness of 500 to 1500 nm.
  8. 根据权利要求1所述的硅衬底上N极性面高频GaN整流器外延结构，其特征在于，所述非掺杂N极性InGaN层厚度为80-150nm。The N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate according to claim 1, wherein the undoped N-polar InGaN layer has a thickness of 80-150 nm.
  9. 权利要求1～8任一项所述的硅衬底上N极性面高频GaN整流器外延结构的制备方法，其特征在于，包括以下步骤：The method for preparing an N-polar plane high-frequency GaN rectifier epitaxial structure on a silicon substrate according to any one of claims 1 to 8, comprising the steps of:
    (1)衬底及其晶向的选取：采用单晶硅衬底，以Si(111)密排面为外延面，以
    Figure PCTCN2018072856-appb-100001
    方向作为材料外延生长方向；     (1) Selection of substrate and crystal orientation: a single crystal silicon substrate is used, and the Si (111) close-packed surface is used as an epitaxial surface to
    Figure PCTCN2018072856-appb-100001
    The direction is used as a material epitaxial growth direction;
    (2)衬底表面清洗：将硅衬底依次放入丙酮、无水乙醇、去离子水三种介质中，依次超声清洗5-15min，取出后用去离子水冲洗并使用热高纯氮气吹干；(2) Cleaning of the substrate surface: The silicon substrate is sequentially placed in three mediums of acetone, absolute ethanol and deionized water, followed by ultrasonic cleaning for 5-15 minutes, taken out, rinsed with deionized water and blown with hot high-purity nitrogen. dry;
    (3)非掺杂N极性面AlN缓冲层外延生长：采用脉冲激光沉积工艺，将洁净衬底放入真空室中，将衬底温度升高至420-500℃，腔体内真空度抽至2.0×10 -4-4.0×10 -4torr，激光能量为250-320mJ，激光频率为15-30Hz，氮气流量为2-10sccm，富N条件下生长N极性AlN薄膜，Al源为AlN高纯陶瓷靶材； (3) Epitaxial growth of undoped N-polar plane AlN buffer layer: using a pulsed laser deposition process, the clean substrate is placed in a vacuum chamber, the substrate temperature is raised to 420-500 ° C, and the vacuum is extracted into the chamber. 2.0×10 -4 -4.0×10 -4 torr, laser energy is 250-320mJ, laser frequency is 15-30Hz, nitrogen flow rate is 2-10sccm, N-polar AlN film is grown under N-rich condition, Al source is AlN high Pure ceramic target;
    (4)非掺杂N极性面组分渐变Al yGa 1-yN缓冲层外延生长：采用MOCVD技术，将已制备N极性AlN样品放入生长腔室内，将腔室真空度抽至2.0×10 -6-4.0×10 -6torr，温度升至950-1000℃，并向腔室内通入NH 3、N 2、H 2、CH 4、三甲基铝，在步骤(3)得到的外延片上外延生长非掺杂N极性面成分渐变Al yGa 1-yN层；所述气相沉积中，反应室气压为180-220torr，NH 3、N 2、H 2、CH 4、三甲基铝流量分别为30-50slm、60-100slm、15-24slm、400-450sccm； (4) Undoped N-polar surface composition graded Al y Ga 1-y N buffer layer epitaxial growth: MOCVD technology was used to place the prepared N-polar AlN sample into the growth chamber, and the chamber vacuum was drawn to 2.0×10 -6 -4.0×10 -6 torr, the temperature is raised to 950-1000 ° C, and NH 3 , N 2 , H 2 , CH 4 , trimethyl aluminum are introduced into the chamber, and obtained in step (3) Epitaxially grown epitaxially grown non-doped N-polar surface composition graded Al y Ga 1-y N layer; in the vapor deposition, the chamber pressure is 180-220 torr, NH 3 , N 2 , H 2 , CH 4 , III The flow rate of methyl aluminum is 30-50slm, 60-100slm, 15-24slm, 400-450sccm, respectively;
    (5)碳掺杂N极性GaN层外延生长：在MOCVD中完成步骤(4)膜层生长后，关闭三甲基铝与H 2的气路，将腔体温度降为770-800℃并向腔室内通入NH 3、N 2、CH 4、三甲基镓，在外延片上原位生长碳掺杂N极性面GaN层。所述气相沉积中反应室气压为180-240torr，NH 3、N 2、CH 4、三甲基镓流量分别为20-50slm、60-90slm、120-150sccm、450-520sccm； (5) Epitaxial growth of carbon-doped N-polar GaN layer: After completing the step (4) film growth in MOCVD, the gas path of trimethylaluminum and H 2 is turned off, and the temperature of the cavity is lowered to 770-800 ° C and NH 3 , N 2 , CH 4 , and trimethyl gallium were introduced into the chamber, and a carbon-doped N-polar GaN layer was grown in situ on the epitaxial wafer. The gas pressure in the reaction chamber is 180-240 torr, and the flow rates of NH 3 , N 2 , CH 4 and trimethyl gallium are respectively 20-50 slm, 60-90 slm, 120-150 sccm, 450-520 sccm;
    (6)非掺杂N极性面Al xGa 1-xN层外延生长：采用与步骤(4)相同的工艺条件，通过调整三甲基铝流量与生长温度调控膜层Al组分变化； (6) Undoped N-polar plane Al x Ga 1-x N layer epitaxial growth: using the same process conditions as in step (4), adjusting the Al composition change of the film layer by adjusting the flow rate of trimethylaluminum and the growth temperature;
    (7)非掺N极性面AlN插入层生长：在MOCVD完成步骤(6)膜层生长后，关闭三甲基镓和N 2气路供应，将腔体温度升至1000-1100℃并向腔室内通入NH 3、H 2和三甲基铝，外延生长N极性面AlN插入层；所述气相沉积腔体气压为180-220torr，NH 3、H 2、三甲基铝流量分别为30-50slm、10-20slm、350-440sccm； (7) Non-N-polarized surface AlN insertion layer growth: after the MOCVD completion step (6) film growth, the trimethylgallium and N 2 gas path supply is turned off, and the temperature of the cavity is raised to 1000-1100 ° C and The chamber is filled with NH 3 , H 2 and trimethyl aluminum to epitaxially grow an N-polar surface AlN insertion layer; the vapor deposition chamber gas pressure is 180-220 torr, and the flow rates of NH 3 , H 2 and trimethyl aluminum are respectively 30-50slm, 10-20slm, 350-440sccm;
    (8)非掺杂N极性面GaN层外延生长：在步骤(5)工艺基础上，关闭腔室内CH 4供应，并将NH 3、N 2、三甲基镓流量分别为50-80slm、60-80slm、500-750sccm； (8) Epitaxial growth of the undoped N-polar plane GaN layer: on the basis of the step (5) process, the CH 4 supply in the chamber is closed, and the flow rates of NH 3 , N 2 and trimethyl gallium are respectively 50-80 slm, 60-80 slm, 500-750 sccm;
    (9)非掺杂N极性面InGaN层外延生长：在MOCVD中完成步骤(8)膜层生长后，将生长温度降为740～760℃，通入NH 3、N 2、三甲基镓和三甲基铟，外延生长N极性面InGaN层；所述气相沉积中腔体气压为180-220torr，NH 3、N 2、三甲基镓和三甲基铟流量分别为30-50slm、55-80slm、100-150sccm、500-750sccm。 (9) Epitaxial growth of undoped N-polar plane InGaN layer: After the step (8) film growth is completed in MOCVD, the growth temperature is lowered to 740-760 ° C, and NH 3 , N 2 , and trimethyl gallium are introduced. And trimethyl indium, epitaxially growing an N-polar plane InGaN layer; the gas pressure in the vapor deposition is 180-220 torr, and the flow rates of NH 3 , N 2 , trimethyl gallium and trimethyl indium are respectively 30-50 slm, 55-80 slm, 100-150 sccm, 500-750 sccm.
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