CN106653839A - HEMT structure with modulated carbon-doped gallium nitride high-resistance layer and preparation method of structure - Google Patents

HEMT structure with modulated carbon-doped gallium nitride high-resistance layer and preparation method of structure Download PDF

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CN106653839A
CN106653839A CN201610859900.0A CN201610859900A CN106653839A CN 106653839 A CN106653839 A CN 106653839A CN 201610859900 A CN201610859900 A CN 201610859900A CN 106653839 A CN106653839 A CN 106653839A
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gan
hemt
ammonia
passed
hydrogen
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徐明升
王洪
周泉斌
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South China University of Technology SCUT
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

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Abstract

The invention discloses an HEMT structure with a modulated carbon-doped gallium nitride high-resistance layer and a preparation method of the structure. The HEMT structure comprises a substrate, a GaN nucleating layer, a GaN buffer layer, a GaN:C/GaN superlattice high-resistance layer and an AlGaN barrier layer from bottom to top successively, the high-resistance layer is formed by connecting GaN:C intentional doping layers and unintentional doping GaN layers alternatively, the thickness of the single GaN:C intentional doping layer is 5-500nm, and the thickness of the single unintentional doping GaN layer is 5-500nm. GaN:C/GaN superlattices can improve the resistance of a gallium nitride material but not reduce the crystal quality, and the high voltage withstanding characteristic, reliability and service life of a GaN/AlGaN heterojunction HEMT device can be improved.

Description

HEMT-structure with modulation carbon doping gallium nitride resistive formation and preparation method thereof
Technical field
The present invention relates to a kind of gallium nitride based hemts epitaxial structure, more particularly to a kind of to have modulation carbon doping gallium nitride HEMT-structure of resistive formation and preparation method thereof, belongs to semiconductor microelectronic technology field.
Background technology
The semi-conducting materials such as gallium nitride material and silicon, GaAs are compared, with higher critical breakdown electric field, bigger electricity The characteristics such as sub- saturation drift velocity, higher energy gap and thermal conductivity, have very big excellent in high voltagehigh frequency field of electronic devices Gesture.Group III nitride material also has very big spontaneous and piezoelectric polarization coefficient, and using this characteristic high electron mobility can be prepared Rate transistor device, can be used for high voltage switch device and high-frequency microwave device field.
Fig. 1 be prior art GaN base HEMT epitaxial structure schematic diagram, GaN/AlGaN hetero-junctions high electron mobility crystal The conventional epitaxial structure of pipe (HEMT) is by substrate 1, GaN nucleating layers 2, GaN cushions 3, resistive formation 4 and the barrier layer being sequentially connected 5 and cap layers 6 constitute.Wherein, resistive formation 4 is the gallium nitride resistive formation of unintentional doping, there is higher defect concentration, shows N , in HEMT device under state, there is larger leakage current in type conductive characteristic, increase device power consumption.
Chinese invention patent application 201480015652.0 discloses a kind of method of manufacture semiconductor devices, is a kind of former Position carbon doping technology, the method forms in the reactor III-N semiconductor layers and in hydrocarbon precursor injecting reactor, thus carbon Doping III-N semiconductor layers simultaneously make III-N semiconductor layers insulate or semi-insulating.Semiconductor devices is obtained including substrate and substrate On carbon doping insulation or semi-insulating III-N semiconductor layers.Carbon doping density in III-N semiconductor layers is more than 5 × 1018cm-3 And the dislocation density in III-N semiconductor layers is less than 2 × 109cm-2；The method improves the resistance of gallium nitride, reduces electric leakage, but The method carbon doping can substantially reduce the crystal mass of gallium nitride material, reduce device reliability and life-span.
The content of the invention
The present invention is high for existing gallium nitride based hemts leakage current, the problem of reliability and life-span difference, proposes a kind of raising The resistance of nitride buffer layer, while do not deteriorate its crystal mass, reduces device creepage, improve device high pressure resistant property and HEMT-structure with modulation carbon doping gallium nitride resistive formation of reliability and preparation method thereof.
The purpose of the present invention is achieved through the following technical solutions：
With modulation carbon doping gallium nitride resistive formation HEMT-structure, from bottom to top successively include substrate, GaN nucleating layers, GaN cushions, GaN:C/GaN superlattices resistive formation and AlGaN potential barrier；Wherein resistive formation is by multilayer GaN：The intentional carbon dopings of C Alternately connection is constituted for layer and unintentional doped gan layer；Individual layer GaN：The thickness of the intentional carbon doped layers of C is 5-500nm；Individual layer is non- Deliberately the thickness of doped gan layer is 5-500nm.
Further to realize the object of the invention, it is preferable that the thickness of the GaN nucleating layers is 20-40nm；The GaN delays The thickness for rushing layer is 1.5-2.5um.
Preferably, the HEMT-structure also includes cap layers；The thickness of cap layers is 0-5nm；Cap layers are GaN cap, AlN cap layers Or silicon nitride cap layer；Cap layers are arranged in AlGaN potential barrier.
Preferably, the substrate is Sapphire Substrate, silicon carbide substrates or silicon materials substrate.
Preferably, the individual layer GaN：The thickness of the intentional carbon doped layers of C is 20-40nm；The unintentional doped gan layer of individual layer 4.2 thickness is 20-40nm.
Preferably, the thickness of the AlGaN potential barrier is 5-50nm.
The preparation method of the HEMT-structure with modulation carbon doping gallium nitride resistive formation, comprises the steps：
1) in placing the substrate into Metallo-Organic Chemical Vapor chemical deposition equipment, substrate slice temperature is increased to 1050-1100 DEG C, pressure 50-200mbar is passed through hydrogen, and HIGH TEMPERATURE PURGE is carried out to substrate, removes the pollutant of substrate surface；
2) substrate slice temperature is reduced to 500-600 DEG C, and pressure brings up to 300-600mbar, is passed through ammonia, hydrogen and front three Base gallium, grows GaN nucleating layers on the substrate slice described in step (1)；
3) substrate slice temperature is brought up to into 1050-1100 DEG C, reduced pressure to 100-300mbar, be passed through ammonia, hydrogen and Trimethyl gallium, the GaN cushions of the unintentional doping grown on the nucleating layer described in step (2)；
4) circulating repetition following steps (4a) and (4b) 10-50 time, obtain GaN:C/GaN superlattices resistive formations
(4a) substrate slice temperature is kept into for 1050-1100 DEG C, reduced pressure is passed through ammonia, hydrogen and three to 20-70mbar Methyl gallium grows first the GaN of 5-500nm on the GaN cushions of the unintentional doping described in step (3)：The intentional carbon dopings of C Layer；GaN is grown during circulating repetition in unintentional doped gan layer：The intentional carbon doped layers of C；
(4b) by substrate slice temperature keep 1050-1100 DEG C, pressure brings up to 300-500mbar, be passed through ammonia, hydrogen and Trimethyl gallium, in the GaN described in step (4a)：The unintentional doping GaN cushions of 5-500nm are grown on the intentional carbon doped layers of C；
5) on the basis of step (4), substrate slice temperature is reduced to 1010-1060 DEG C, and pressure 40-60mbar is passed through ammonia Gas, hydrogen, trimethyl gallium and trimethyl aluminium, grow AlGaN potential barrier.
Preferably, the flow that step (2) is passed through ammonia, hydrogen and trimethyl gallium is respectively 4-6 liter/min, 18-25 liters/ Minute and 20-40cc；Step (3) be passed through the flow of ammonia, hydrogen and trimethyl gallium be respectively 15-25 liter/min, 18-25 liters/ Minute and 100-150cc；Step (5) is passed through ammonia, hydrogen, trimethyl gallium and trimethyl aluminium, and flow is respectively 5-15 liter/min Clock, 18-25 liter/min, 10-20cc and 20-25cc
Preferably, the flow that step (4a) is passed through ammonia, hydrogen and trimethyl gallium is respectively 5-15 liter/min, 18-25 Liter/min and 100-150cc；Step (4b) be passed through the flow of ammonia, hydrogen and trimethyl gallium be respectively 20-35 liter/min, 18-25 liter/min and 100-150cc.
Preferably, on the basis of step (5), substrate slice temperature is reduced to 1010-1060 DEG C, and pressure 40-60mbar leads to Enter ammonia, hydrogen and trimethyl gallium, flow is respectively 5-15 liter/min, 18-25 liter/min, 10-20cc, grows 0-5nm GaN cap.
According to the present invention, the preparation method of the HEMT-structure with modulation carbon doping gallium nitride resistive formation, including following step Suddenly：
1) in placing the substrate into Metallo-Organic Chemical Vapor chemical deposition equipment, substrate slice temperature is increased to 1050-1100 DEG C, pressure 50-200mbar is passed through hydrogen, and HIGH TEMPERATURE PURGE is carried out to substrate, removes the pollutant of substrate surface；
2) substrate slice temperature is reduced to 500-600 DEG C, and pressure brings up to 300-600mbar, is passed through ammonia, hydrogen and front three Base gallium, flow is respectively 4-6 liter/min, 18-25 liter/min and 20-40cc, is grown on the substrate slice described in step (1) The GaN nucleating layers of 20-40nm.
3) substrate slice temperature is brought up to into 1050-1100 DEG C, reduced pressure to 100-300mbar, be passed through ammonia, hydrogen and Trimethyl gallium, flow is respectively 15-25 liter/min, 18-25 liter/min and 100-150cc, in the nucleating layer described in step (2) The GaN cushions of the unintentional doping of upper growth 1.5-2.5um.
4) circulating repetition following steps (4a) and (4b) 10-50 time, obtain GaN:C/GaN superlattices resistive formations.
(4a) substrate slice temperature is kept into for 1050-1100 DEG C, reduced pressure is passed through ammonia, hydrogen and three to 20-70mbar Methyl gallium, flow is respectively 5-15 liter/min, 18-25 liter/min and 100-150cc；First in the non-event described in step (3) The GaN of 20-40nm is grown on the GaN cushions of meaning doping：The intentional carbon doped layers of C；In unintentional doped gan layer during circulating repetition The GaN of upper growth 20-40nm：The intentional carbon doped layers of C；
(4b) by substrate slice temperature keep 1050-1100 DEG C, pressure brings up to 300-500mbar, be passed through ammonia, hydrogen and Trimethyl gallium, flow is respectively 20-35 liter/min, 18-25 liter/min and 100-150cc, in the GaN described in step (4a)：C The unintentional doping GaN cushions of 20-40nm are deliberately grown on carbon doped layer；
5) on the basis of step (4), substrate slice temperature is reduced to 1010-1060 DEG C, and pressure 40-60mbar is passed through ammonia Gas, hydrogen, trimethyl gallium and trimethyl aluminium, flow is respectively 5-15 liter/min, 18-25 liter/min, 10-20cc and 20- 25cc, grows 15-30nm AlGaN potential barriers, Al components 20-25%.
6) on the basis of step (5), substrate slice temperature is reduced to 1010-1060 DEG C, and pressure 40-60mbar is passed through ammonia Gas, hydrogen and trimethyl gallium, flow is respectively 5-15 liter/min, 18-25 liter/min, 10-20cc, grows 0-5nm GaN caps Layer.
Relative to prior art, the invention has the advantages that：
The present invention is big for existing HEMT device GaN cushion leakage current, and the life-span is low and the problems such as poor reliability, proposition one The HEMT epitaxial structures with modulation carbon doping resistive formation are planted, by modulating carbon doping GaN:Carbon in C/GaN superlattice structures Doping can improve the high resistant characteristic of GaN material, while because of doping the crystal mass of GaN film will not be caused to decline, therefore On the premise of can ensure that GaN high resistance buffer layers have compared with high-crystal quality, its resistance characteristic is greatly improved, reduce cushion leakage Electricity, improves the life and reliability of HEMT device.
Description of the drawings
Fig. 1 is prior art GaN base HEMT epitaxial structure schematic diagram；
Fig. 2 is the embodiment of the present invention 1 with modulation carbon doping resistive formation HEMT epitaxial structure schematic diagrames；
Fig. 3 embodiment of the present invention 1 with modulation carbon doping resistive formation HEMT resistive formation carbon doping concentrations, ammonia flow and Growth pressure curve；
The source-drain electrode electric leakage curve of Fig. 4 HEMT of the present invention and prior art HEMT；Transverse axis is voltage in Fig. 4, and unit is V, the longitudinal axis is leakage current, and unit is A；Solid line is the electric leakage flow curve of prior art HEMT in figure, and dotted line is HEMT of the present invention Electric leakage flow curve.
Illustrate in figure：Substrate 1, GaN nucleating layers 2, GaN cushions 3, GaN:C/GaN superlattices resistive formation 4, barrier layer 5, GaN cap 66, GaN：The intentional carbon doped layers 4.1 of C；Unintentional doped gan layer 4.2.
Specific embodiment
To more fully understand the present invention, with reference to the accompanying drawings and examples the present invention is described further, but this Bright embodiment not limited to this.
The present invention has the HEMT-structure of modulation carbon doping gallium nitride resistive formation as shown in Fig. 2 the HEMT-structure is from lower On successively by substrate 1, GaN nucleating layers 2, GaN cushions 3, GaN:C/GaN superlattices resistive formation 4, AlGaN potential barrier 5, cap layers 6 Connection composition；Wherein resistive formation 4 is by multilayer GaN：The intentional carbon doped layers 4.1 of C and unintentional doped gan layer 4.2 replace connection group Into.Individual layer GaN：The thickness of the intentional carbon doped layers 4.1 of C is 5-500nm；The thickness of the unintentional doped gan layer 4.2 of individual layer is 5- 500nm。
Preferably, substrate 1 of the invention is Sapphire Substrate；The thickness of GaN nucleating layers 2 is 20-40nm；GaN cushions 3 Thickness be 1.5-2.5um；
Preferably, the thickness of AlGaN potential barrier of the present invention is 5-50nm, and further preferred thickness is 15-30nm；AlGaN Al components 5%-50% in layer.
Preferably, individual layer GaN：The thickness of the intentional carbon doped layers 4.1 of C is 20-40nm；The unintentional doped gan layer 4.2 of individual layer Thickness be 20-40nm.
The thickness 0-5nm of the cap layers 6, material can be GaN, AlN or silicon nitride.
The resistive formation can be GaN:C/GaN superlattices, superlattices quantity 5-50 pair.
Embodiment 1
A kind of preparation method of the HEMT-structure with modulation carbon doping gallium nitride resistive formation, step is as follows：
1) Sapphire Substrate 1 is put in Metallo-Organic Chemical Vapor chemical deposition equipment (Wei Yi sections K465 types), substrate Piece temperature is increased to 1100 DEG C, and pressure 100mbar is passed through hydrogen, and HIGH TEMPERATURE PURGE is carried out to substrate, removes the pollution of substrate surface Thing；
2) temperature of substrate 1 is reduced to 550 DEG C, and pressure brings up to 550mbar, is passed through ammonia, hydrogen and trimethyl gallium, flow Respectively 5 liters/min, 22 liters/min and 30cc, in step 1) described in substrate slice on grow 30nm GaN nucleating layers 2, be Follow-up GaN growth provides nucleus.
3) by step 2) underlayer temperature with GaN nucleating layers 2 brings up to 1080 DEG C, and reduced pressure is passed through to 200mbar Ammonia, hydrogen and trimethyl gallium, flow is respectively 20 liters/min, 22 liters/min and 130cc, in the nucleation described in step (2) The GaN cushions 3 of 2um are grown on layer.
4) circulating repetition following steps (a) and (b) 20 times, obtain GaN:C/GaN superlattices resistive formations, the electricity of GaN material Resistance is higher, while because of doping the crystal mass of GaN film will not be caused to decline；
A underlayer temperature is kept for 1080 DEG C by (), reduced pressure is passed through ammonia, hydrogen and trimethyl gallium, flow to 50mbar It is respectively 10 liters/min, 20 liters/min and 130cc, grows 30nm's on the GaN cushions 3 described in step (3) first GaN：The intentional carbon doped layers 4.1 of C, the doping content of carbon is 1 × 1020cm-3.In unintentional doped gan layer 4.2 during circulating repetition Upper growth GaN：The intentional carbon doped layers 4.1 of C.
B underlayer temperature is kept for 1080 DEG C by (), pressure brings up to 300mbar, is passed through ammonia, hydrogen and trimethyl gallium, stream Amount is respectively 22 liters/min, 20 liters/min and 130cc, in described GaN：The non-of 30nm is grown on the intentional carbon doped layers 4.1 of C Intentional doped gan layer 4.2.
The growing principle of GaN is that trimethyl gallium and ammonia react at high temperature, generates GaN, contains carbon in methyl, one Part carbon can be discharged with tail gas, and another part carbon can enter into GaN intracells, form carbon doping, and pressure is lower, ammonia flow Amount is lower, and the carbon doping concentration in GaN is higher, therefore step (a) is intentional C doping, and step (b) is unintentional C doping.
5) in step 4) on the basis of, underlayer temperature is reduced to 1060 degrees Celsius, pressure 50mbar, be passed through ammonia, hydrogen, Trimethyl gallium and trimethyl aluminium, flow is respectively 10 liters/min, 20 liters/min, 90cc and 40cc, grows the thick AlGaN of 25nm Barrier layer 5, Al components 23%.The barrier height of AlGaN is higher than GaN, so being barrier layer.
6) in step 5) on the basis of, underlayer temperature is reduced to 1050 degrees Celsius, and pressure 200mbar is passed through ammonia, hydrogen And trimethyl gallium, flow is respectively 10 liters/min, 20 liters/min and 40cc, grows the thick GaN caps 6 of 2nm.
Fig. 3 is the schematic diagram of the present embodiment resistive formation carbon doping concentration, ammonia flow and growth pressure curve, ammonia flow It is in cyclically-varying with growth pressure, carbon doping concentration is also in cyclically-varying；When the low growth pressure of ammonia flow is low, carbon is mixed Miscellaneous concentration is high, and corresponding gallium nitride layer has higher resistance；When the low growth pressure of ammonia flow is high, carbon doping concentration is low, right The gallium nitride answered has higher crystal mass；The two alternating growth, can obtain the gallium nitride of high electrical resistance and crystal mass Film.The present invention can be by secondary ion proton with modulation carbon doping resistive formation HEMT resistive formation carbon doping concentrations curve 8.1 Spectrum test is obtained；The present invention has modulation carbon doping resistive formation HEMT resistive formation ammonia flows curve 8.2, can be by ammonia on equipment The mass flowmenter monitoring data of gas is obtained；The present invention has modulation carbon doping resistive formation HEMT resistive formation growth pressure curves 8.3 can be obtained by pressure controller monitors data on equipment；It is characteristic of the invention that during growing high resistant gallium nitride layer, being passed through anti- The ammonia flow of room is answered in cyclically-varying, the pressure change synchronous with ammonia flow of reative cell, when ammonia flow and reative cell When pressure is relatively low, the gallium nitride of growth has higher carbon doping concentration, raw when when ammonia flow and higher chamber pressure Long gallium nitride has relatively low carbon doping concentration, and the high resistant gallium nitride material for finally obtaining is by GaN:C/GaN superlattices groups Into.
After preparing electrode on the sample described in embodiment 1, using it is lucky when 2636B sources tables test HEMT I-V curves, Obtain the result of Fig. 4.Transverse axis is voltage in Fig. 4, and unit is V, and the longitudinal axis is leakage current, and unit is A；Solid line is prior art in figure The electric leakage flow curve of HEMT, dotted line is the electric leakage flow curve of HEMT of the present invention；As seen from Figure 4, the electricity for preparing on the present embodiment product The resistance of high resistance layer is higher, while crystal mass is higher, therefore the leakage current of HEMT device is less.
Embodiment 2
A kind of preparation method of the HEMT-structure with modulation carbon doping gallium nitride resistive formation, step is as follows：
1) Sapphire Substrate 1 is put in Metallo-Organic Chemical Vapor chemical deposition equipment (Wei Yi sections K465 types), substrate Piece temperature is increased to 1050 DEG C, and pressure 80mbar is passed through hydrogen, and HIGH TEMPERATURE PURGE is carried out to substrate, removes the pollution of substrate surface Thing；
2) temperature of substrate 1 is reduced to 530 DEG C, and pressure brings up to 530mbar, is passed through ammonia, hydrogen and trimethyl gallium, flow Respectively 4 liters/min, 18 liters/min and 25cc, in step 1) described in substrate slice on grow 25nm GaN nucleating layers 2, be Follow-up GaN growth provides nucleus.
3) by step 2) underlayer temperature with GaN nucleating layers 2 brings up to 1050 DEG C, and reduced pressure is passed through to 150mbar Ammonia, hydrogen and trimethyl gallium, flow is respectively 15 liters/min, 20 liters/min and 110cc, in the nucleation described in step (2) The GaN cushions 3 of 1.5um are grown on layer.
4) circulating repetition following steps (a) and (b) 10 times, obtain GaN:C/GaN superlattices resistive formations, the electricity of GaN material Resistance is higher, while because of doping the crystal mass of GaN film will not be caused to decline；
A underlayer temperature is kept for 1050 DEG C by (), reduced pressure is passed through ammonia, hydrogen and trimethyl gallium, flow to 40mbar It is respectively 6 liters/min, 15 liters/min and 100cc, grows 25nm's on the GaN cushions 3 described in step (3) first GaN：The intentional carbon doped layers 4.1 of C, the doping content of carbon is 3 × 1020cm-3.In unintentional doped gan layer 4.2 during circulating repetition Upper growth GaN：The intentional carbon doped layers 4.1 of C.
B underlayer temperature is kept for 1050 DEG C by (), pressure brings up to 350mbar, is passed through ammonia, hydrogen and trimethyl gallium, stream Amount is respectively 28 liters/min, 25 liters/min and 150cc, in described GaN：The non-of 25nm is grown on the intentional carbon doped layers 4.1 of C Intentional doped gan layer 4.2.
The growing principle of GaN is that trimethyl gallium and ammonia react at high temperature, generates GaN, contains carbon in methyl, one Part carbon can be discharged with tail gas, and another part carbon can enter into GaN intracells, form carbon doping, and pressure is lower, ammonia flow Amount is lower, and the carbon doping concentration in GaN is higher, therefore step (a) is intentional C doping, and step (b) is unintentional C doping.
5) in step 4) on the basis of, underlayer temperature is reduced to 1040 degrees Celsius, pressure 40mbar, be passed through ammonia, hydrogen, Trimethyl gallium and trimethyl aluminium, flow is respectively 6 liters/min, 15 liters/min, 80cc and 30cc, grows the thick AlGaN of 25nm Barrier layer 5, Al components 22%.The barrier height of AlGaN is higher than GaN, so being barrier layer.
Compared with Example 1, high resistant gallium nitride number of cycles is less slightly for the present embodiment, therefore leakage current is more slightly higher than embodiment 1； In addition the present embodiment compared with Example 1, does not have gallium nitride cap layers, and contact berrier is slightly higher, therefore device operating voltages are than implementing Example is slightly higher.
Embodiment 3
A kind of preparation method of the HEMT-structure with modulation carbon doping gallium nitride resistive formation, step is as follows：
1) Sapphire Substrate 1 is put in Metallo-Organic Chemical Vapor chemical deposition equipment (Wei Yi sections K465 types), substrate Piece temperature is increased to 1150 DEG C, and pressure 120mbar is passed through hydrogen, and HIGH TEMPERATURE PURGE is carried out to substrate, removes the pollution of substrate surface Thing；
2) temperature of substrate 1 is reduced to 570 DEG C, and pressure brings up to 570mbar, is passed through ammonia, hydrogen and trimethyl gallium, flow Respectively 8 liters/min, 25 liters/min and 35cc, in step 1) described in substrate slice on grow 35nm GaN nucleating layers 2, be Follow-up GaN growth provides nucleus.
3) by step 2) underlayer temperature with GaN nucleating layers 2 brings up to 1100 DEG C, and reduced pressure is passed through to 250mbar Ammonia, hydrogen and trimethyl gallium, flow is respectively 25 liters/min, 30 liters/min and 150cc, in the nucleation described in step (2) The GaN cushions 3 of 2.5um are grown on layer.
4) circulating repetition following steps (a) and (b) 20 times, obtain GaN:C/GaN superlattices resistive formations, the electricity of GaN material Resistance is higher, while because of doping the crystal mass of GaN film will not be caused to decline；
A underlayer temperature is kept for 1100 DEG C by (), reduced pressure is passed through ammonia, hydrogen and trimethyl gallium, flow to 60mbar It is respectively 10 liters/min, 25 liters/min and 150cc, grows 35 nm's on the GaN cushions 3 described in step (3) first GaN：The intentional carbon doped layers 4.1 of C, the doping content of carbon is 0.8 × 1020cm-3.In unintentional doped gan layer during circulating repetition GaN is grown on 4.2：The intentional carbon doped layers 4.1 of C.
B underlayer temperature is kept for 1100 DEG C by (), pressure brings up to 450mbar, is passed through ammonia, hydrogen and trimethyl gallium, stream Amount is respectively 35 liters/min, 35 liters/min and 180cc, in described GaN：The non-of 35nm is grown on the intentional carbon doped layers 4.1 of C Intentional doped gan layer 4.2.
The growing principle of GaN is that trimethyl gallium and ammonia react at high temperature, generates GaN, contains carbon in methyl, one Part carbon can be discharged with tail gas, and another part carbon can enter into GaN intracells, form carbon doping, and pressure is lower, ammonia flow Amount is lower, and the carbon doping concentration in GaN is higher, therefore step (a) is intentional C doping, and step (b) is unintentional C doping.
5) in step 4) on the basis of, underlayer temperature is reduced to 1070 degrees Celsius, pressure 60mbar, be passed through ammonia, hydrogen, Trimethyl gallium and trimethyl aluminium, flow is respectively 10 liters/min, 25 liters/min, 100cc and 50cc, grows 35nm thickness AlGaN potential barrier 5, Al components 24%.The barrier height of AlGaN is higher than GaN, so being barrier layer.
6) in step 5) on the basis of, 1070 degrees Celsius of underlayer temperature, pressure 60mbar is passed through ammonia, hydrogen and front three Base gallium, flow is respectively 10 liters/min, 25 liters/min and 50cc, grows the thick GaN caps of 2.5nm.
Compared with Example 1, high resistant gallium nitride number of cycles is slightly more, therefore leakage current is more lower slightly than embodiment for the present embodiment； In addition compared with Example 1, gallium nitride cap layers are thicker, and contact berrier is lower for the present embodiment, therefore device operating voltages are than implementing Example 1 is lower slightly.

Claims (10)

1. there is the HEMT-structure of modulation carbon doping gallium nitride resistive formation, it is characterised in that the HEMT-structure is from bottom to top successively Including substrate, GaN nucleating layers, GaN cushions, GaN:C/GaN superlattices resistive formation and AlGaN potential barrier；Wherein resistive formation by Multilayer GaN：Alternately connection is constituted for the intentional carbon doped layers of C and unintentional doped gan layer；Individual layer GaN：The thickness of the intentional carbon doped layers of C Spend for 5-500nm；The thickness of the unintentional doped gan layer of individual layer is 5-500nm.
2. it is according to claim 1 with the HEMT-structure for modulating carbon doping gallium nitride resistive formation, it is characterised in that described The thickness of GaN nucleating layers is 20-40nm；The thickness of the GaN cushions is 1.5-2.5um.
3. it is according to claim 1 with the HEMT-structure for modulating carbon doping gallium nitride resistive formation, it is characterised in that described HEMT-structure also includes cap layers；The thickness of cap layers is 0-5nm；Cap layers are GaN cap, AlN cap layers or silicon nitride cap layer；Cap layers It is arranged in AlGaN potential barrier.
4. it is according to claim 1 with the HEMT-structure for modulating carbon doping gallium nitride resistive formation, it is characterised in that described Substrate is Sapphire Substrate, silicon carbide substrates or silicon materials substrate.
5. it is according to claim 1 with the HEMT-structure for modulating carbon doping gallium nitride resistive formation, it is characterised in that described Individual layer GaN：The thickness of the intentional carbon doped layers of C is 20-40nm；The thickness of the unintentional doped gan layer 4.2 of individual layer is 20-40nm.
6. it is according to claim 1 with the HEMT-structure for modulating carbon doping gallium nitride resistive formation, it is characterised in that described The thickness of AlGaN potential barrier is 5-50nm.
7. there is the preparation method of the HEMT-structure of modulation carbon doping gallium nitride resistive formation described in claim 1, it is characterised in that Comprise the steps：
1) in placing the substrate into Metallo-Organic Chemical Vapor chemical deposition equipment, substrate slice temperature is increased to 1050-1100 DEG C, pressure Power 50-200mbar, is passed through hydrogen, and HIGH TEMPERATURE PURGE is carried out to substrate, removes the pollutant of substrate surface；
2) substrate slice temperature is reduced to 500-600 DEG C, and pressure brings up to 300-600mbar, is passed through ammonia, hydrogen and trimethyl Gallium, grows GaN nucleating layers on the substrate slice described in step (1)；
3) substrate slice temperature is brought up to into 1050-1100 DEG C, reduced pressure is passed through ammonia, hydrogen and front three to 100-300mbar Base gallium, the GaN cushions of the unintentional doping grown on the nucleating layer described in step (2)；
4) circulating repetition following steps (4a) and (4b) 10-50 time, obtain GaN:C/GaN superlattices resistive formations
(4a) substrate slice temperature is kept into for 1050-1100 DEG C, reduced pressure is passed through ammonia, hydrogen and trimethyl to 20-70mbar Gallium grows first the GaN of 5-500nm on the GaN cushions of the unintentional doping described in step (3)：The intentional carbon doped layers of C；Follow Ring grows GaN when repeating in unintentional doped gan layer：The intentional carbon doped layers of C；
(4b) substrate slice temperature is kept into for 1050-1100 DEG C, pressure brings up to 300-500mbar, is passed through ammonia, hydrogen and front three Base gallium, in the GaN described in step (4a)：The unintentional doping GaN cushions of 5-500nm are grown on the intentional carbon doped layers of C；
5) on the basis of step (4), substrate slice temperature is reduced to 1010-1060 DEG C, and pressure 40-60mbar is passed through ammonia, hydrogen Gas, trimethyl gallium and trimethyl aluminium, grow AlGaN potential barrier.
8. there is according to claim 7 the preparation method of the HEMT-structure of modulation carbon doping gallium nitride resistive formation, its feature It is that it is respectively 4-6 liter/min, 18-25 liter/min and 20- that step (2) is passed through the flow of ammonia, hydrogen and trimethyl gallium 40cc；Step (3) be passed through the flow of ammonia, hydrogen and trimethyl gallium be respectively 15-25 liter/min, 18-25 liter/min and 100-150cc；Step (5) is passed through ammonia, hydrogen, trimethyl gallium and trimethyl aluminium, and flow is respectively 5-15 liter/min, 18-25 Liter/min, 10-20cc and 20-25cc.
9. there is according to claim 7 the preparation method of the HEMT-structure of modulation carbon doping gallium nitride resistive formation, its feature Be, step (4a) be passed through the flow of ammonia, hydrogen and trimethyl gallium be respectively 5-15 liter/min, 18-25 liter/min and 100-150cc；It is respectively 20-35 liter/min, 18-25 liter/min that step (4b) is passed through the flow of ammonia, hydrogen and trimethyl gallium Clock and 100-150cc.
10. there is according to claim 7 the preparation method of the HEMT-structure of modulation carbon doping gallium nitride resistive formation, its feature It is that on the basis of step (5), substrate slice temperature is reduced to 1010-1060 DEG C, and pressure 40-60mbar is passed through ammonia, hydrogen Gas and trimethyl gallium, flow is respectively 5-15 liter/min, 18-25 liter/min, 10-20cc, grows 0-5nm GaN caps.
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Application publication date: 20170510