CN113628953A - Method for preparing nitride material and nitride semiconductor device - Google Patents
Method for preparing nitride material and nitride semiconductor device Download PDFInfo
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- CN113628953A CN113628953A CN202110672724.0A CN202110672724A CN113628953A CN 113628953 A CN113628953 A CN 113628953A CN 202110672724 A CN202110672724 A CN 202110672724A CN 113628953 A CN113628953 A CN 113628953A
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- 239000000463 material Substances 0.000 title claims abstract description 66
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000012792 core layer Substances 0.000 claims abstract description 18
- 230000006911 nucleation Effects 0.000 claims abstract description 18
- 238000010899 nucleation Methods 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000002346 layers by function Substances 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
Abstract
The invention provides a preparation method of a nitride material and a nitride semiconductor device, belonging to the technical field of semiconductor material preparation, wherein the method comprises the following steps: growing an In-containing nitride-shaped core layer on a substrate at a low temperature; performing high-temperature annealing and etching, and desorbing In the In-containing nitride-shaped nuclear layer to form uniformly distributed nitride-shaped nuclear layer islands; growing a buffer layer on the nitride-shaped core layer island; growing a GaN-based material on the buffer layer; and growing a functional layer on the GaN-based material. The preparation method of the nitride material provided by the invention can obtain the nitride nucleation layer which is uniformly distributed, is beneficial to improving the crystal quality of the material, and the prepared nitride material with better uniformity can improve the finished product rate and uniformity of devices.
Description
Technical Field
The invention belongs to the technical field of semiconductor material preparation, and particularly relates to a preparation method of a nitride material and a nitride semiconductor device prepared by using the material.
Background
As one representative third-generation semiconductor materials, group III nitrides composed of GaN, AlN, InN, BN, and the like are direct bandgap semiconductors, and heterojunctions, quantum wells, superlattices, and the like prepared using the group III nitrides have excellent device characteristics, are of great significance for manufacturing novel semiconductor devices, and have been widely and intensively studied domestically and abroad.
Because the homogeneous substrate of the nitride material is short at present, heterogeneous substrates such as Si, SiC, sapphire and the like are mostly adopted for nitride epitaxy, and because large lattice mismatch and thermal mismatch exist between the nitride and the substrate, the heterogeneous external delay of the nitride material can generate high-density dislocation, so that the growth of the nucleation layer in direct contact with the substrate is very important.
The common nucleation layer is made of GaN and AlN nucleation layer materials, but as the size of the epitaxial material is increased, the size and distribution of formed islands are uneven due to poor migration capability of Al atoms in the GaN material, particularly the AlN material, so that the crystal quality and uniformity of the material are influenced.
Disclosure of Invention
The invention aims to provide a preparation method of a nitride material, which can obtain a uniformly distributed nitride nucleation layer, improve the crystal quality of the nitride material and further improve the yield and uniformity of devices.
In order to achieve the above object, the present invention provides, in a first aspect, a method for preparing a nitride material, the method comprising the steps of:
growing an In-containing nitride-shaped core layer on a substrate at a low temperature;
performing high-temperature annealing etching, and desorbing In the In-containing nitride-shaped nuclear layer to form uniformly distributed nitride-shaped nuclear layer islands;
growing a buffer layer on the nitride-shaped core layer islands;
growing a GaN-based material on the buffer layer;
and growing a functional layer on the GaN-based material.
In a possible implementation manner of the first aspect, the substrate includes any one of a single crystal substrate, a composite template substrate, and a flexible substrate.
In a possible implementation manner of the first aspect, In growing the In-containing nitride-shaped nucleation layer on the substrate at a low temperature, the growth temperature of the In-containing nitride-shaped nucleation layer is 400-.
In a possible implementation manner of the first aspect, the nitride epitaxial growth process of the nitride-based core layer includes any one of metal organic chemical vapor deposition epitaxial deposition, molecular beam epitaxial deposition, pulsed laser deposition, magnetron sputtering deposition, electron beam evaporation deposition, and chemical vapor deposition.
In a possible implementation manner of the first aspect, the In-containing nitride-shaped core layer includes any one of InGaN, InAlN, InBN, InAlGaN.
In a possible implementation manner of the first aspect, the In-containing nitride-shaped core layer has a thickness of 0 to 10000 nm.
In a possible implementation manner of the first aspect, the annealing temperature is 900-.
In a possible implementation manner of the first aspect, the buffer layer includes GaN, AlN, AlGaN, InN, InAlN, InGaN, and has a thickness of 0 to 10000 nm.
In a possible implementation manner of the first aspect, the GaN-based material includes nitride materials such as GaN, InN, InAlN, InGaN, AlGaN, and the like, and the thickness is 0 to 100000 nm.
In a second aspect, embodiments of the present invention provide a nitride semiconductor device fabricated using a nitride material obtained by the method for fabricating a nitride material.
The preparation method of the nitride material and the device provided by the invention have the beneficial effects that: compared with the prior art, the preparation method of the nitride material provided by the invention has the advantages that the nitride nucleation layer containing In grows at low temperature, because the migration capacity of In is strong, nucleation shapes with uniform size and uniform distribution can be formed on the substrate, then, aiming at the characteristic that In is easy to desorb at high temperature, the nucleation layer is etched at high temperature, nucleation islands with uniform distribution are left along with the desorption of In, and then, the preparation of the subsequent epitaxial material is carried out. The invention can obtain the nitride nucleation layer which is uniformly distributed, is beneficial to improving the crystal quality of the material, and the prepared nitride material with better uniformity can improve the yield and the uniformity of the device, and is especially suitable for preparing epitaxial materials with the size of 4 inches and larger.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a method for preparing a nitride material according to an embodiment of the present invention;
in the figure: 1. a substrate; 2. an In-containing nitride-shaped core layer; 3. a buffer layer; 4. a GaN-based material; 5. a functional layer; 6. the nitride-formed core layer islands.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
One embodiment of a method for preparing a nitride material, as shown in fig. 1, comprises the steps of:
step one, growing a nitride-shaped nuclear layer 2 containing In on a substrate 1 at a low temperature;
secondly, high-temperature annealing and etching are carried out, In the In-containing nitride-shaped nuclear layer 2 is desorbed, and uniformly distributed nitride-shaped nuclear layer islands 6 are formed;
step three, growing a buffer layer 3 on the nitride-shaped nuclear layer island 6;
step four, growing a GaN-based material 4 on the buffer layer 3;
and step five, growing a functional layer 5 on the GaN-based material 4.
Compared with the prior art, the preparation method of the nitride material provided by the invention adopts a nitride epitaxial method and a nitride epitaxial process, firstly grows the In-containing nitride nuclear layer on the substrate at a low temperature, then carries out annealing etching at a high temperature, desorbs In the In-containing nitride nuclear layer to form uniformly distributed nitride nuclear layer islands, then grows the buffer layer, then grows the GaN-based material, and then grows the functional layer on the GaN-based material according to the application requirement. The method can obtain the nitride nucleation layer which is uniformly distributed, is favorable for improving the crystal quality of the material, and can improve the yield and the uniformity of the device by preparing the nitride material with better uniformity. The method is particularly suitable for preparing epitaxial materials with the size of 4 inches and larger, and is applied to the field of preparation of GaN-based High Electron Mobility Transistor (HEMT) or photodiode (LED) materials and devices.
As a specific implementation manner of the first step in this embodiment, the substrate 1 includes any one of a single crystal substrate, a composite template substrate, and a flexible substrate. Specifically, SiC, Si, Sapphire, AlN, GaN, diamond, PC, PET, PI, etc. are included.
As a specific implementation of the first step of this example, In the low-temperature growth of the In-containing nitride-shaped nucleation layer 2 on the substrate 1, the growth temperature of the In-containing nitride-shaped nucleation layer is 400-. For example, the growth temperature is 500 ℃, 600 ℃, 850 ℃, 900 ℃, 1000 ℃, 1100 ℃, 1200 ℃ or the like. The specific process parameters are set according to application requirements.
As a specific embodiment of the first step of this example, the In-containing nitride-shaped core layer 2 is prepared by using a nitride epitaxial growth process and method, and the nitride epitaxial growth process includes any one of metal organic chemical vapor deposition epitaxial deposition, molecular beam epitaxial deposition, pulsed laser deposition, magnetron sputtering deposition, electron beam evaporation deposition, and chemical vapor deposition.
As a specific embodiment of the first step of this example, the In-containing nitride-formed core layer 2 includes any one of InGaN, InAlN, InBN, and InAlGaN.
As a specific example of the first step of this example, the thickness of the In-containing nitride-shaped core layer 2 was 0 to 10000 nm. For example, the thickness is 10nm, 100nm, 200nm, 550nm, 800nm, 10000nm, etc., and a suitable thickness is grown according to application needs.
As a specific implementation manner of the second step in this embodiment, the high temperature annealing etching is performed at an annealing temperature of 900-1800 ℃ for 0-20000 s. The annealing temperature is 900 deg.C, 1000 deg.C, 1200 deg.C, 1300 deg.C, 1500 deg.C, 1800 deg.C, etc., and the time is 10s, 50s, 100s, 1000s, 3000s, 20000s, etc. The specific process parameters are set according to application requirements.
The nitride-shaped core layer islands 6 formed after the high-temperature annealing and etching in the second step of this embodiment are convex dots and have a cone-like shape.
As a specific implementation manner of step three in this embodiment, the buffer layer 3 includes GaN, AlN, AlGaN, InN, InAlN, and InGaN, and has a thickness of 0 to 10000 nm. For example, the thickness is 10nm, 100nm, 200nm, 550nm, 800nm, 10000nm, etc., and a suitable thickness is grown according to application needs.
As a specific implementation manner of the fourth step in this embodiment, the GaN-based material 4 includes nitride materials such as GaN, InN, InAlN, InGaN, AlGaN, and the like, and has a thickness of 0 to 100000 nm. For example, the thickness is 10nm, 100nm, 200nm, 550nm, 800nm, 10000nm, etc., and a suitable thickness is grown according to application needs.
The preparation method of the nitride material provided by the invention takes a metal organic chemical vapor deposition epitaxial deposition Method (MOCVD) as an example to prepare the AlGaN/GaN heterojunction field effect transistor on a sapphire substrate as follows: on a sapphire substrate, an in0.3al0.7n nucleus layer was grown to a thickness of 10nm at 800 c, and then etched using H2 at 1100 c for 5 minutes, and a 1 μm thick semi-insulating GaN layer, a 300nm thick unintentionally doped GaN channel layer, and a 20nm thick Al composition 20% AlGaN barrier layer were regrown.
Based on the same inventive concept, a nitride semiconductor device is prepared by using the nitride material obtained by the preparation method of the nitride material. The invention can obtain the nitride nucleation layer which is uniformly distributed, is beneficial to improving the crystal quality of the material, and the prepared nitride material with better uniformity can improve the yield and the uniformity of the device.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A method of preparing a nitride material, the method comprising the steps of:
growing an In-containing nitride-shaped core layer on a substrate at a low temperature;
performing high-temperature annealing etching, and desorbing In the In-containing nitride-shaped nuclear layer to form uniformly distributed nitride-shaped nuclear layer islands;
growing a buffer layer on the nitride-shaped core layer islands;
growing a GaN-based material on the buffer layer;
and growing a functional layer on the GaN-based material.
2. The method for producing a nitride material according to claim 1, wherein the substrate includes any one of a single crystal substrate, a composite template substrate, and a flexible substrate.
3. The method for producing a nitride material according to claim 1, wherein In growing the In-containing nitride-shaped nucleation layer on the substrate at a low temperature, the growth temperature of the In-containing nitride-shaped nucleation layer is 400-1200 ℃.
4. The method of claim 1, wherein the nitride epitaxial growth process of the nitride-forming core layer comprises any one of metal-organic chemical vapor deposition epitaxial deposition, molecular beam epitaxial deposition, pulsed laser deposition, magnetron sputter deposition, electron beam evaporation deposition, chemical vapor deposition.
5. The method for producing a nitride material according to claim 1, wherein the In-containing nitride-shaped core layer includes any one of InGaN, InAlN, InBN, InAlGaN.
6. The method for producing a nitride material according to claim 1, wherein the thickness of the In-containing nitride-shaped core layer is 0 to 10000 nm.
7. The method as claimed in claim 1, wherein the high temperature annealing etching is performed at an annealing temperature of 900-1800 ℃ for 0-20000 s.
8. The method of preparing a nitride material according to claim 1, wherein the buffer layer comprises GaN, AlN, AlGaN, InN, InAlN, InGaN, and has a thickness of 0 to 10000 nm.
9. The method according to claim 1, wherein the GaN-based material comprises a nitride material such as GaN, InN, InAlN, InGaN, AlGaN, and has a thickness of 0 to 100000 nm.
10. A nitride semiconductor device characterized by being produced using the nitride material obtained by the production method of a nitride material according to any one of claims 1 to 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116344696A (en) * | 2023-05-26 | 2023-06-27 | 江西兆驰半导体有限公司 | Composite three-dimensional nucleation layer, preparation method thereof, epitaxial wafer and light-emitting diode |
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- 2021-06-17 CN CN202110672724.0A patent/CN113628953A/en active Pending
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