CN110752146A - Method for growing gallium nitride film on silicon substrate - Google Patents
Method for growing gallium nitride film on silicon substrate Download PDFInfo
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- CN110752146A CN110752146A CN201911030849.2A CN201911030849A CN110752146A CN 110752146 A CN110752146 A CN 110752146A CN 201911030849 A CN201911030849 A CN 201911030849A CN 110752146 A CN110752146 A CN 110752146A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
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- H01L21/02507—Alternating layers, e.g. superlattice
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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Abstract
The invention discloses a method for growing a gallium nitride film on a silicon substrate. By growing a set of superlattices on the GaN transition layer, the superlattices can relieve part of the tensile stress and can filter part of the threading dislocation. The method can obviously improve the crystal quality of the GaN epitaxial thin film material, eliminate surface cracks and obtain the GaN epitaxial thin film material which can be used for device development and application.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a gallium nitride (GaN) thin film material with a crack-free surface which is grown on a silicon (Si) substrate by heteroepitaxy by using a nitride composite buffer layer method.
Background
The GaN material is a typical representative of third-generation wide bandgap semiconductor materials, has the outstanding advantages of large forbidden band width, high electron drift velocity, high pressure resistance, high temperature resistance, corrosion resistance, irradiation resistance and the like, is particularly suitable for developing and manufacturing high-temperature high-frequency high-power radio frequency microwave devices and power electronic devices, and has wide application prospects in the fields of wireless communication, radars, semiconductor illumination and the like.
However, due to the lack of homogeneous substrates for GaN materials, materials are currently prepared by heteroepitaxy, and the most commonly used substrates include sapphire, silicon carbide and Si substrates. Compared with other substrates, the Si substrate has the advantages of low price, mature manufacturing process, large size, high thermal conductivity and easy realization of Si-based photoelectric integration, so that the adoption of the SI substrate for epitaxial growth of the GaN material has obvious advantages.
However, due to the fact that the lattice constants and the thermal expansion coefficients of the Si substrate and the GaN material are greatly different, the lattice mismatch and the thermal mismatch respectively reach 17% and 56%, a large tensile stress is generated in the growth process of the GaN epitaxial material, a large amount of dislocation and even cracks are generated in the GaN epitaxial material, and the quality of the GaN epitaxial thin film material is seriously reduced.
Disclosure of Invention
The invention mainly aims to provide a method for growing a GaN epitaxial thin film material with a crack-free surface on a Si substrate; the specific technical scheme is as follows:
a method of growing a gallium nitride film on a silicon substrate, comprising the steps of:
step 1: selecting a single crystal Si substrate;
step 2: epitaxially growing a nitride composite buffer layer on a Si substrate;
and step 3: growing a GaN transition layer on the nitride composite buffer layer;
and 4, step 4: growing a group of superlattice on the GaN transition layer;
and 5: and growing a GaN epitaxial layer on the superlattice to complete the preparation of the GaN film.
Further, the nitride composite buffer layer includes: an AlN layer and an AlxInyGazN layer grown on the AlN layer, wherein x is greater than or equal to 0 and less than or equal to 1, y is greater than or equal to 0 and less than or equal to 1, z is greater than or equal to 0 and less than or equal to 1, and x + y + z = 1.
Further, the AlN layer has a thickness of 50-250nm and a growth temperature of 800-1100 ℃.
Further, the thickness of the AlxInyGazN layer is 50-250nm, and the growth temperature is 800-1100 ℃.
Further, the thickness of the GaN transition layer is 100-400nm, and the growth temperature is 800-1100 ℃.
Further, the superlattice is (AlN/AlxGayN) × z, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, x + y =1, 1 ≦ z ≦ 50.
Further, the AlN layer has a thickness of 3-15nm and a growth temperature of 800-1100 ℃.
Further, the thickness of the AlxGayN layer is 5-25nm, and the growth temperature is 800-.
Further, the growth temperature of the GaN epitaxial layer is 800-1100 ℃.
According to the method for growing the gallium nitride film on the silicon substrate, the nitride composite buffer layer is epitaxially grown on the Si substrate, and the nitride composite buffer layer can relieve lattice mismatch and prevent meltback etching reaction. By growing a set of superlattices on the GaN transition layer, the superlattices can relieve part of the tensile stress and can filter part of the threading dislocation. The method can obviously improve the crystal quality of the GaN epitaxial thin film material, eliminate surface cracks and obtain the GaN epitaxial thin film material which can be used for device development and application.
Drawings
FIG. 1 is a schematic structural diagram of the present invention for epitaxial growth of GaN epitaxial thin film materials on Si substrates.
Detailed Description
The present invention will now be more fully described with reference to the following examples. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein.
The present invention provides a method for growing a GaN epitaxial thin film material with a crack-free surface on a Si substrate, as shown in fig. 1, wherein the structure is prepared by the following steps:
step 1: selecting a single crystal Si as a substrate;
step 2: epitaxially growing a nitride composite buffer layer on the Si substrate, wherein the nitride composite buffer layer can relieve lattice mismatch and prevent a meltback etching reaction;
and step 3: growing a GaN transition layer on the nitride composite buffer layer;
and 4, step 4: growing a group of superlattice on the GaN transition layer, wherein the superlattice can release partial tensile stress and can filter partial threading dislocation;
and 5: and growing a GaN epitaxial layer on the superlattice to complete the preparation of the GaN film.
The method for growing the nitride composite buffer layer, the GaN transition layer, the superlattice and the GaN epitaxial layer on the single crystal Si substrate adopts metal organic chemical vapor phase epitaxy (MOCVD).
Wherein the nitride composite buffer layer includes: an AlN layer and an AlxInyGazN layer grown on the AlN layer. The thickness of the AlN layer is controlled to be 50-250nm, and the growth temperature is 800-; the thickness of the AlxInyGazN layer is 50-250nm, the growth temperature is 800-1100 ℃, x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, z is more than or equal to 0 and less than or equal to 1, and x + y + z = 1.
Wherein the thickness of the GaN transition layer is 100-400nm, and the growth temperature is 800-1100 ℃.
Wherein the superlattice is (AlN/AlxGayN) xz, the thickness of the AlN layer is 3-15nm, and the growth temperature is 800-1100 ℃; the thickness of the AlxGayN layer is 5-25nm, the growth temperature is 800-1100 ℃, x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, x + y =1, and z is more than or equal to 1 and less than or equal to 50.
Wherein the growth temperature of the GaN epitaxial layer is 800-1100 ℃.
The above examples are only for illustrating the present invention, and besides, there are many different embodiments, which can be conceived by those skilled in the art after understanding the idea of the present invention, and therefore, they are not listed here.
Claims (9)
1. A method of growing a gallium nitride film on a silicon substrate, comprising the steps of:
step 1: selecting a single crystal Si substrate;
step 2: epitaxially growing a nitride composite buffer layer on a Si substrate;
and step 3: growing a GaN transition layer on the nitride composite buffer layer;
and 4, step 4: growing a group of superlattice on the GaN transition layer;
and 5: and growing a GaN epitaxial layer on the superlattice to complete the preparation of the GaN film.
2. The method of growing a gallium nitride film on a silicon substrate according to claim 1, wherein the nitride composite buffer layer comprises: an AlN layer and an AlxInyGazN layer grown on the AlN layer, wherein x is greater than or equal to 0 and less than or equal to 1, y is greater than or equal to 0 and less than or equal to 1, z is greater than or equal to 0 and less than or equal to 1, and x + y + z = 1.
3. The method as claimed in claim 2, wherein the AlN layer has a thickness of 50-250nm and a growth temperature of 800-1100 ℃.
4. The method as claimed in claim 2, wherein the thickness of the AlxInyGazN layer is 50-250nm, and the growth temperature is 800-.
5. The method as claimed in claim 1, wherein the thickness of the GaN transition layer is 100-400nm and the growth temperature is 800-1100 ℃.
6. The method of claim 1, wherein the superlattice is (AlN/AlxGayN) × z, and wherein 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, x + y =1, and 1 ≦ z ≦ 50.
7. The method for growing a gallium nitride film on a silicon substrate as claimed in claim 6, wherein the AlN layer has a thickness of 3-15nm and a growth temperature of 800-.
8. The method as claimed in claim 6, wherein the thickness of the AlxGayN layer is 5-25nm, and the growth temperature is 800-1100 ℃.
9. The method of claim 6, wherein the growth temperature of the GaN epitaxial layer is 800-1100 ℃.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112133748A (en) * | 2020-09-15 | 2020-12-25 | 西安电子科技大学芜湖研究院 | HEMT device with large-size Si substrate and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1967778A (en) * | 2005-11-17 | 2007-05-23 | 中国科学院半导体研究所 | Method for growing flawless gallium nitride film on silicon underlay |
| CN101807523A (en) * | 2010-03-17 | 2010-08-18 | 中国科学院半导体研究所 | Method for growing GaN film without crack on surface on large mismatch substrate |
| JP2014057020A (en) * | 2012-09-14 | 2014-03-27 | Oki Electric Ind Co Ltd | Nitride semiconductor device and manufacturing condition specifying method thereof |
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- 2019-10-28 CN CN201911030849.2A patent/CN110752146A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1967778A (en) * | 2005-11-17 | 2007-05-23 | 中国科学院半导体研究所 | Method for growing flawless gallium nitride film on silicon underlay |
| CN101807523A (en) * | 2010-03-17 | 2010-08-18 | 中国科学院半导体研究所 | Method for growing GaN film without crack on surface on large mismatch substrate |
| JP2014057020A (en) * | 2012-09-14 | 2014-03-27 | Oki Electric Ind Co Ltd | Nitride semiconductor device and manufacturing condition specifying method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112133748A (en) * | 2020-09-15 | 2020-12-25 | 西安电子科技大学芜湖研究院 | HEMT device with large-size Si substrate and preparation method thereof |
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Application publication date: 20200204 |