CN1967778A - Method for growing flawless gallium nitride film on silicon underlay - Google Patents
Method for growing flawless gallium nitride film on silicon underlay Download PDFInfo
- Publication number
- CN1967778A CN1967778A CN 200510086899 CN200510086899A CN1967778A CN 1967778 A CN1967778 A CN 1967778A CN 200510086899 CN200510086899 CN 200510086899 CN 200510086899 A CN200510086899 A CN 200510086899A CN 1967778 A CN1967778 A CN 1967778A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- nitride film
- silicon substrate
- substrate
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a method for growing non-crack gallium nitride film on silicon substrate, which comprises that: (1), selecting one large-mismatch substrate; (2), growing gallium nitride baffle layer on said substrate, the oxide buffer layer can release the crystal mismatch between substrate and gallium nitride film, to separate the reaction between gallium and substrate; (3), growing extending layer on oxide buffer layer.
Description
Technical field
The invention belongs to technical field of semiconductors, refer in particular on the silicon substrate of big mismatch, utilize the flawless gallium nitride epitaxial materials of new oxide buffer growth.
Background technology
Third generation semi-conducting material gallium nitride (GaN) base device, be used for commerce as ultraviolet detector (UV-detectors), high electron mobility triode (HEMTs), hetero junction field effect pipe (HFETs), visible-ultraviolet laser device (LDs) and light-emitting diode (LEDs) etc., especially in the last few years, the LEDs fast development of throwing light on, be widely used in display, illumination, indicator light, billboard, traffic lights etc., the light compositing light source is quickened in conduct in agricultural, the instrument of conduct diagnosis and treatment in medical treatment.Also be used for simultaneously the important military aspect, high performance radar device needs device that the frequency emission of X-band and S-band is provided, GaN base microwave device also is used for aspects such as wireless base station, information transmission because its high breakdown electric field, high electron saturation velocities and elevated operating temperature not only are used for the military radar-probing system of going up under the extreme condition.
Yet, the problem of gallium nitride material maximum is to lack homo-substrate, and general at present employing dissimilar materials is as substrate, and wherein silicon substrate is low because of its price, crystal mass good, technology maturation, easily cleavage, easily cutting are convenient to advantages such as photoelectricity is integrated and are had bigger advantage.But, because have bigger lattice mismatch and thermal mismatching between silicon and the gallium nitride, therefore crackle can appear in the gallium nitride layer that grows, this is the topmost problem of present silicon based gallium nitride, also be the key factor that influences device technology simultaneously, therefore solve the primary goal that crack problem is an extension gallium nitride film on the silicon substrate.The present invention proposes to utilize new oxide as resilient coating, can prevent effectively that crackle from producing.
Summary of the invention
The objective of the invention is to, provide a kind of on silicon substrate the method for growing flawless gallium nitride film, this method is on silicon substrate, adopt method growth one deck oxide buffer layer of metal-organic chemical vapor deposition equipment, utilize metal-organic chemical vapor deposition equipment method or molecular beam epitaxial method gallium nitride film growth then, gallium nitride film material with this method growth has been eliminated the ubiquitous crackle situation of growing gallium nitride on silicon substrate, surface smoothness height.
The present invention a kind of on silicon substrate the method for growing flawless gallium nitride film, it is characterized in that, comprise the steps:
(1) selects a big mismatch substrate;
(2) grow oxide resilient coating on big mismatch substrate, oxide buffer layer can be alleviated the lattice mismatch between substrate and the gallium nitride film, barrier metal gallium and substrate reaction;
(3) at the oxide buffer layer growing epitaxial layers.
Wherein big mismatch substrate is a silicon substrate.
Wherein said on big mismatch silicon substrate the method for grow oxide resilient coating be to utilize metal organic-matter chemical vapour phase epitaxy method or molecular beam epitaxial method preparation.
Wherein the material of resilient coating is an oxide buffer layer.
Grow oxide resilient coating on big mismatch substrate wherein, its growth temperature is at 900-1200 ℃.
The thickness of wherein said oxide buffer layer is between 10nm-200nm.
The material of wherein said epitaxial loayer is a gallium nitride film material.
The thickness of wherein said epitaxial loayer is 0.5 μ m-3 μ m.
The surperficial r.m.s. roughness of wherein said epitaxial loayer is less than 6nm.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing the present invention is done a detailed description, wherein:
Fig. 1 is an oxide buffer layer structural representation on the silicon substrate of the present invention;
Fig. 2 is an epitaxial loayer gallium nitride film schematic configuration diagram of the present invention;
Fig. 3 is the surface topography map of the present invention under light microscope;
Fig. 4 is the shape appearance figure of the present invention under atomic force microscope;
Fig. 5 is that the present invention is at scanning electron microscopy lower section figure.
Embodiment
See also Fig. 1 and Fig. 2, the present invention a kind of on silicon substrate the method for growing flawless gallium nitride film 21, comprise the steps:
(1) select a big mismatch substrate 11, this big mismatch substrate 11 is a silicon substrate;
(2) grow oxide resilient coating 12 on big mismatch substrate 11, oxide buffer layer 12 can be alleviated the lattice mismatch between substrate 11 and the gallium nitride film 21, barrier metal gallium and substrate 11 reactions; Wherein said on big mismatch silicon substrate 11 method of grow oxide resilient coating 12 be to utilize metal organic-matter chemical vapour phase epitaxy method or molecular beam epitaxial method preparation, the material of this resilient coating 12 is an oxide buffer layer, and the thickness of this oxide buffer layer 12 is between 10nm-200nm; Grow oxide resilient coating 12 on big mismatch substrate 11 wherein, its growth temperature is at 900-1200 ℃;
(3) at oxide buffer layer 12 growing epitaxial layers 21, the material of this epitaxial loayer 21 is a gallium nitride film material, and the thickness of this epitaxial loayer 21 is 0.5 μ m-3 μ m, and the surperficial r.m.s. roughness of this epitaxial loayer 21 is less than 6nm.
For further specifying content of the present invention, below please in conjunction with consulting Fig. 1 to shown in Figure 5;
(1) as shown in Figure 1, at first utilize metal organic-matter chemical vapour phase epitaxy method deposition one deck oxide buffer layer 12 on silicon substrate 11, between the about 10nm-200nm of the thickness of this oxide buffer layer 12, growth temperature is 900-1200 ℃.
(2) as shown in Figure 2, continued growth epitaxial loayer 21 on oxide buffer layer 12, the material of this epitaxial loayer 21 is a gallium nitride film, adopt the growth of metal organic-matter chemical vapour phase epitaxy method or molecular beam epitaxial method, the thickness of epitaxial loayer 21 is 0.5 μ m-3 μ m (be illustrated in figure 3 as the surface topography photo of gallium nitride film epitaxial loayer 21 under light microscope, do not have crackle on whole surface).
Figure 4 shows that gallium nitride film epitaxial loayer 21 shape appearance figure under atomic force microscope, surperficial r.m.s. roughness is less than 6nm.
Figure 5 shows that structural section figure under the scanning electron microscopy, be respectively silicon substrate 11, oxide buffer layer 12, gallium nitride film epitaxial loayer 21.
Table 1 is thickness, growth temperature and the surface roughness of resilient coating 12 and epitaxial loayer 21.
Table 1
| Temperature | Thickness | Roughness | |
| | 900-1200℃ | 10-200nm | |
| | 0.5-3μm | ＜6nm |
Be illustrated for an example below:
(1) as shown in Figure 1, go up use metal organic-matter chemical vapour phase epitaxy method deposition one deck γ-Al at silicon substrate 11 (crystal orientation is (001))
2O
3 Oxide buffer layer 12, the about 100nm of thickness, growth temperature is 1000 ℃, reaction source is respectively trimethyl aluminium and oxygen.
(2) as shown in Figure 2, follow gallium nitride film growth epitaxial loayer 21, growth temperature is 1050 ℃, reaction source is trimethyl gallium and ammonia, growth thickness is 2 μ m (as shown in Figure 3, light microscope has been observed gallium nitride film epitaxial loayer 21 surface topographies, and whole surface does not have crackle to produce).
Shown in Figure 4, atomic force microscope has characterized gallium nitride film epitaxial loayer 21 patterns, and surperficial r.m.s. roughness is 5.468nm.
Shown in Figure 5, scanning electron microscopy has characterized gallium nitride film epitaxial loayer 21 cross sections, is respectively silicon substrate 11 from bottom to top, γ-Al
2O
3 Oxide buffer layer 12, gallium nitride film epitaxial loayer 21, wherein gallium nitride film epitaxial loayer 21 thickness are 2 μ m.
Claims (9)
1. the method for a growing flawless gallium nitride film on silicon substrate is characterized in that, comprises the steps:
(1) selects a big mismatch substrate;
(2) grow oxide resilient coating on big mismatch substrate, oxide buffer layer can be alleviated the lattice mismatch between substrate and the gallium nitride film, barrier metal gallium and substrate reaction;
(3) at the oxide buffer layer growing epitaxial layers.
2. according to claim 1 on silicon substrate the method for growing flawless gallium nitride film, it is characterized in that wherein big mismatch substrate is a silicon substrate.
3. according to claim 1 on silicon substrate the method for growing flawless gallium nitride film, it is characterized in that, wherein said on big mismatch silicon substrate the method for grow oxide resilient coating be to utilize metal organic-matter chemical vapour phase epitaxy method or molecular beam epitaxial method preparation.
4. according to claim 1 and 2 on silicon substrate the method for growing flawless gallium nitride film, it is characterized in that wherein the material of resilient coating is an oxide buffer layer.
5. according to claim 1 and 2 on silicon substrate the method for growing flawless gallium nitride film, it is characterized in that, grow oxide resilient coating on big mismatch substrate wherein, its growth temperature is at 900-1200 ℃.
6. according to claim 1 and 2 on silicon substrate the method for growing flawless gallium nitride film, it is characterized in that the thickness of wherein said oxide buffer layer is between 10nm-200nm.
7. according to claim 1 on silicon substrate the method for growing flawless gallium nitride film, it is characterized in that the material of wherein said epitaxial loayer is a gallium nitride film material.
According to claim 1 or 7 described on silicon substrate the method for growing flawless gallium nitride film, it is characterized in that the thickness of wherein said epitaxial loayer is 0.5 μ m-3 μ m.
According to claim 1,7 or 8 described on silicon substrate the method for growing flawless gallium nitride film, it is characterized in that the surperficial r.m.s. roughness of wherein said epitaxial loayer is less than 6nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510086899 CN1967778A (en) | 2005-11-17 | 2005-11-17 | Method for growing flawless gallium nitride film on silicon underlay |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510086899 CN1967778A (en) | 2005-11-17 | 2005-11-17 | Method for growing flawless gallium nitride film on silicon underlay |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1967778A true CN1967778A (en) | 2007-05-23 |
Family
ID=38076469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510086899 Pending CN1967778A (en) | 2005-11-17 | 2005-11-17 | Method for growing flawless gallium nitride film on silicon underlay |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1967778A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752146A (en) * | 2019-10-28 | 2020-02-04 | 北京华进创威电子有限公司 | Method for growing gallium nitride film on silicon substrate |
-
2005
- 2005-11-17 CN CN 200510086899 patent/CN1967778A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752146A (en) * | 2019-10-28 | 2020-02-04 | 北京华进创威电子有限公司 | Method for growing gallium nitride film on silicon substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11005003B2 (en) | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip | |
| CN1200466C (en) | Group III nitride compound semiconductor device | |
| EP1732145A2 (en) | Method for manufacturing nitride-based semiconductor device | |
| CN1154154C (en) | Dual process semiconductor heterostructure and methods | |
| CN1678771A (en) | Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density | |
| Wan et al. | Growth of crack-free hexagonal GaN films on Si (100) | |
| CN102738321A (en) | Method and system for expitaxial processing of miscut block substrate | |
| KR20170115617A (en) | Epitaxial hexagonal material of ion beam assisted deposition textured substrate | |
| US20200328079A1 (en) | Light emitters on transition metal dichalcogenides directly converted from thermally and electrically conductive substrates and method of making the same | |
| Allerman et al. | Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates | |
| Wang et al. | AlGaN nanowires grown on SiO2/Si (100) using graphene as a buffer layer | |
| CN101388337A (en) | Process for growing high-quality monocrystal indium nitride thin-film having double buffering layers | |
| CN1956229A (en) | Meta-GaAs lining double-mould size distributed ImAs quantum point and manufacturing method | |
| WO2017077805A1 (en) | Epitaxial substrate for semiconductor elements, semiconductor element, and production method for epitaxial substrates for semiconductor elements | |
| US6869702B2 (en) | Substrate for epitaxial growth | |
| CN1967778A (en) | Method for growing flawless gallium nitride film on silicon underlay | |
| CN1905132A (en) | Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device | |
| JP5957179B2 (en) | Aluminum carbide thin film, semiconductor substrate on which aluminum carbide thin film is formed, and manufacturing method thereof | |
| Shin et al. | Comparison of the microstructural characterizations of GaN layers grown on Si (111) and on sapphire | |
| CN1697134A (en) | Method for preparing graphical substrate in situ by using SIN film | |
| CN1414644A (en) | Manufacturing method of single/multiple layer hetero quntum point structure | |
| EP1868252A2 (en) | Method of storing GaN substrate, stored substrate and semiconductor device and method of its manufacture | |
| JP6944569B2 (en) | Epitaxial substrates for semiconductor devices and semiconductor devices | |
| CN101397693B (en) | Method for high quality single crystal indium nitride film growth | |
| CN1314081C (en) | Method for growing crackless III family nitride film on silicon substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |