CN101388337A - Process for growing high-quality monocrystal indium nitride thin-film having double buffering layers - Google Patents
Process for growing high-quality monocrystal indium nitride thin-film having double buffering layers Download PDFInfo
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- CN101388337A CN101388337A CNA2008100720295A CN200810072029A CN101388337A CN 101388337 A CN101388337 A CN 101388337A CN A2008100720295 A CNA2008100720295 A CN A2008100720295A CN 200810072029 A CN200810072029 A CN 200810072029A CN 101388337 A CN101388337 A CN 101388337A
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Abstract
The invention discloses a process for growing single-crystal nitriding indium films with high quality and double buffer layers, which comprises growing an AlN buffer layer on a silicon substrate through utilizing the MOCVD technology, continuously growing an AlInN buffer layer on the AlN buffer layer, finally growing InN single-crystal epitaxy, wherein the AlInN buffer layer can be an AlInN buffer layer with single component or an AlInN buffer layer with gradually varied components, wherein In component is gradually increased in a linear change, or be a multi-layer AlInN buffer layer with different components, wherein In component in each layer is gradually increased in a linear change. The process can increase the crystal quality of the InN single-crystal exiptaxy.
Description
Technical background
The present invention relates to MOCVD (metal organic chemical vapor deposition) the technology growth method of indium nitride InN, particularly growing high-quality have the method for the monocrystalline InN film of double-buffering layer.
Background technology
III-V group-III nitride as third generation semi-conducting material: gallium nitride GaN, indium nitride InN, aluminium nitride AlN and alloy material thereof all are the direct gap semiconductor materials, and it is big to have the forbidden band distribution, have covered the wave band from ruddiness to the ultraviolet, can be used for making light-emitting diode, laser, detector and solar cell etc. are at panchromatic demonstration white-light illuminating, the high density storage, aspects such as ultraviolet detection are widely used.On the other hand, because the energy gap of GaN sill is big, the puncture voltage height, electron saturation velocities is big, Heat stability is good, advantages such as corrosion resistance is strong, and dielectric constant is little are widely used in making High Electron Mobility Transistor, bipolar transistor, the long-acting microelectronic components such as transistor of answering are adapted at high temperature, work under the high-power and adverse circumstances.
Some recent results of study show that the InN room temperature energy gap of wurtzite structure is about 0.7eV (electron-volt), rather than the 1.89eV that is always extensively quoted in the past, have therefore produced the probabilistic arguement for the InN energy gap.According to this new energy gap of InN, the luminous wavelength band of the opto-electronic device of III nitride base will be extended to near-infrared from ultraviolet.Based on this advantage, an important potential application of III group-III nitride system is exactly the complete high-photoelectric transformation efficiency solar cell based on nitride of preparation.Wherein, for InGaN (indium gallium nitrogen) ternary alloy three-partalloy, just can obtain the various different bandwidths in this zone of 3.4eV by 0.7eV by changing In and the ratio of Ga, this energy range almost covers whole solar spectrum (0.4-4eV).This not only can reduce the cost of material preparation, and makes structure Design more flexible with preparation, the most important thing is to be expected to obtain higher photoelectric conversion efficiency (〉 70%).Simultaneously, the luminous communication band near 1.55 microns of InN self also provides possibility for making high-speed communications LD (laser diode) and LED (light-emitting diode).
In addition, theoretical prediction shows that also InN has minimum effective mass than other III group-III nitride, has the highest carrier mobility, and under room temperature (300K) and low temperature (77K), the electron mobility best result of GaN Wei 1000cm
2/ vs and 6000cm
2/ vs, the electron mobility of InN is the highest then can to reach 4400cm respectively
2/ vs and 30000cm
2/ vs.InN at room temperature has than higher electronics peak shift speed, electron saturation velocities also is much higher than GaAs and GaN, and the influence that its electron drift velocity is changed by temperature and doping content is less, so it is having very wide application prospect aspect the high speed microelectronic component.
At present, the method for the popular in the world last growth of Si InN monocrystal thin films is directly to deposit InN on Si; Or growth one deck low temperature InN resilient coating, InN then grows; Growth one deck AlN resilient coating is also arranged, regrowth InN.Preceding two kinds of methods are because of the difficult assurance of growth conditions, and the crystal mass that obtains is not high.The InN that the third method grows out can supervene the generation that many metal In are dripped.Because the growth temperature of InN is on the low side (reason is that the saturated vapor pressure of InN is higher), and in lower temperature range, the lysis efficiency of ammonia is very low, cause five clan sources of synthetic InN insufficient, part In just forms metal In and appears at sample surfaces.
Summary of the invention
The objective of the invention is to propose the method that a kind of growing high-quality has the monocrystalline InN film of double-buffering layer, to improve the crystal mass of InN single crystal epitaxial.
To achieve these goals, solution of the present invention is:
A kind of growing high-quality has the method for the monocrystalline InN film of double-buffering layer, on silicon (Si) substrate, utilize MOCVD (metal organic chemical vapor deposition) technology elder generation growing AIN resilient coating, continued growth AlInN resilient coating on the AlN resilient coating, the InN single crystal epitaxial of growing at last.
The growth temperature range of described AlN resilient coating is 1050 ℃-1110 ℃.
The growth thickness scope of described AlN resilient coating is 10nm-200nm (nanometer).
The growth V/III of described AlN resilient coating is 4000-6000 than (being exactly the ratio that reacts the mole of the mole of needed five clan sources and three clan sources).
The growth pressure of described AlN resilient coating is 20Torr-100Torr (holder).
During described AlN buffer growth, feed metal organic source aluminium Al (for example TMAl) earlier, the time that feeds metal organic source is 5 seconds-300 seconds, just feeds ammonia then.
The growth temperature range of described InN single crystal epitaxial is 400 ℃-600 ℃.
The growth pressure scope of described InN single crystal epitaxial is 20Torr-700Torr.
The growth V/III of described InN single crystal epitaxial is than being 3000-20000.
One deck AlInN resilient coating that described AlInN resilient coating is an one-component.
One deck AlInN resilient coating that described AlInN resilient coating is a graded component, the In component is linear variation from less to more.
The multilayer Al InN resilient coating that described AlInN resilient coating is a different component, each layer In component is linear variation from less to more.
After adopting such scheme, the present invention is because the growing AIN resilient coating, the effect of AlN resilient coating is to reduce the Si of substrate to the diffusion of InN epitaxial loayer, reduces lattice mismatch, and, the present invention is continued growth AlInN resilient coating on AlN resilient coating basis, because there are certain lattice mismatch after all in InN and AlN, as the transition zone between the two, can discharge stress by AlInN gradually in transition zone, eliminate misfit dislocation, reduce the influence that lattice mismatch brings.So the present invention improves the crystal mass of InN single crystal epitaxial, obtain high quality single crystal InN film, obtain high quality single crystal InN film.
Description of drawings
Fig. 1 is the corresponding material structure figure of the inventive method growth;
Fig. 2 is X-ray diffraction analysis (XRD) scintigram of the monocrystalline InN film of the inventive method growth;
Fig. 3 is the luminescence generated by light collection of illustrative plates of the monocrystalline InN film of the inventive method growth.
Specific embodiments
As shown in Figure 1, a kind of growing high-quality of the present invention has the method for the monocrystalline InN film of double-buffering layer, be on silicon (Si) substrate 1, to utilize MOCVD (metal organic chemical vapor deposition) technology elder generation growing AIN resilient coating 2, this is one of key of the present invention, continued growth AlInN resilient coating 3 on AlN resilient coating 2, AlInN resilient coating 3 can be one deck AlInN resilient coating of one-component, or one deck AlInN resilient coating of graded component, or the multilayer Al InN resilient coating of different component, this is two of a key of the present invention, the InN single crystal epitaxial 4 of growing at last.
Concrete growth of the present invention may further comprise the steps:
1. in the MOCVD system, under 300 ℃-1000 ℃ temperature, to Si substrate 1 gas disposal of anhydrating, carrier gas is a hydrogen, and the processing time is 10 minutes-15 minutes, and pressure is 20Torr-700Torr.
2. heat up and carry out the growth of AlN resilient coating 2, carrier gas is a hydrogen.When growing AIN resilient coating 2, at first feed metal organic source Al (for example TMAl) 5 seconds-300 seconds, and then feed ammonia, carry out the growth of AlN resilient coating 2.
The growth temperature of AlN resilient coating 2 is 1050 ℃-1110 ℃, and growth thickness is 10nm-200nm, and growth V/III is than being 4000-6000, and growth pressure is 20Torr-100Torr.
3. on AlN resilient coating 2, adopt suitable growing condition growing AlInN resilient coating 3.
In growing AlInN resilient coating 3, the AlInN resilient coating of one deck one-component of can growing, the AlInN resilient coating of the multilayer different I of perhaps can growing n component, the AlInN resilient coating of one deck gradual change In component of perhaps can growing.In change of component trend in the AlInN resilient coating is the linear variation from less to more of In component.This linear change is to play an effect of transition gradually, the In component from low to high, just AlN carries out the transition to the process of InN gradually.This transition is in order to deposit higher-quality InN monocrystal thin films.The crystal mass of InN film is good more, and its every physics, photoelectric parameter are just good more.
4. carry out the growth of InN single crystal epitaxial 3, carrier gas switches to nitrogen.
The temperature of growth InN single crystal epitaxial 3 is 400 ℃-600 ℃, and growth V/III is than being 3000-20000, and growth pressure is 20Torr-700Torr, and optimum growh pressure is controlled at 650-750Torr.
As shown in Figure 2, be X-ray diffraction analysis (XRD) scintigram of the monocrystalline InN film of the inventive method growth; As seen from the figure, the InN film quality that the present invention grows out is good, and the AlInN resilient coating has played the effect of good transition threading dislocation and relaxation stress.
As shown in Figure 3, be the luminescence generated by light collection of illustrative plates of the monocrystalline InN film of the inventive method growth, illustrate that the InN film that the present invention grows out has good photoelectric property, luminescence generated by light presentation of results chief InN monocrystal thin films energy gap is about 0.7ev.Hall (Hall) result has 800cm
2The mobility that/vs is above, carrier concentration is 6 * 10
18Cm
3In the scope.
Claims (10)
1, a kind of growing high-quality has the method for the single crystal indium nitride film of double-buffering layer, it is characterized in that: on silicon substrate, utilize metal organic chemical vapor deposition technology elder generation growing AIN resilient coating, continued growth AlInN resilient coating on the AlN resilient coating, the InN single crystal epitaxial of growing at last.
2, a kind of according to claim 1 growing high-quality has the method for the single crystal indium nitride film of double-buffering layer, it is characterized in that: the growth temperature range of described AlN resilient coating is 1050 ℃-1110 ℃.
3, a kind of according to claim 1 growing high-quality has the method for the single crystal indium nitride film of double-buffering layer, it is characterized in that: the growth thickness scope of described AlN resilient coating is 10nm-200nm.
4, a kind of according to claim 1 growing high-quality has the method for the single crystal indium nitride film of double-buffering layer, it is characterized in that: the growth V/III of described AlN resilient coating is than being 4000-6000.
5, a kind of according to claim 1 growing high-quality has the method for the single crystal indium nitride film of double-buffering layer, it is characterized in that: the growth pressure of described AlN resilient coating is 20Torr-100Torr.
6, a kind of according to claim 1 growing high-quality has the method for the single crystal indium nitride film of double-buffering layer, it is characterized in that: during described AlN buffer growth, feed metal organic source aluminium earlier, the time that feeds metal organic source is 5 seconds-300 seconds, just feeds ammonia then.
7, a kind of according to claim 1 growing high-quality has the method for the single crystal indium nitride film of double-buffering layer, it is characterized in that: the growth temperature range of described InN single crystal epitaxial is 400 ℃-600 ℃.
8, a kind of according to claim 1 growing high-quality has the method for the single crystal indium nitride film of double-buffering layer, it is characterized in that: the growth pressure scope of described InN single crystal epitaxial is 20Torr-700Torr.
9, a kind of according to claim 1 growing high-quality has the method for the single crystal indium nitride film of double-buffering layer, it is characterized in that: the growth V/III of described InN single crystal epitaxial is than being 3000-20000.
10, a kind of according to claim 1 growing high-quality has the method for the single crystal indium nitride film of double-buffering layer, it is characterized in that: one deck AlInN resilient coating that described AlInN resilient coating is an one-component, or one deck AlInN resilient coating of graded component, the In component is linear change from less to more, or the multilayer Al InN resilient coating of different component, each layer In component is linear change from less to more.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346068A (en) * | 2013-07-11 | 2013-10-09 | 中国科学院半导体研究所 | Method for preparing high In component AlInN thin film |
| CN104319233A (en) * | 2014-09-30 | 2015-01-28 | 东莞市中镓半导体科技有限公司 | InN/LT-AlN combined stress release buffer layer technology in MOCVD |
| CN105474414A (en) * | 2013-07-29 | 2016-04-06 | Lg伊诺特有限公司 | Light emitting device |
| CN108346556A (en) * | 2011-07-12 | 2018-07-31 | 纳斯普Ⅲ/Ⅴ有限责任公司 | Single-slice integrated semiconductor structure |
| CN109244203A (en) * | 2018-09-12 | 2019-01-18 | 华灿光电(苏州）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN111785806A (en) * | 2020-07-22 | 2020-10-16 | 扬州乾照光电有限公司 | Solar cell and manufacturing method thereof |
| CN114141918A (en) * | 2021-11-30 | 2022-03-04 | 江苏第三代半导体研究院有限公司 | Light-emitting diode epitaxial structure suitable for working under high-current condition and preparation method |
| WO2024056041A1 (en) * | 2022-09-15 | 2024-03-21 | 纳微朗科技(深圳)有限公司 | Epitaxial chip structure |
-
2008
- 2008-10-28 CN CNA2008100720295A patent/CN101388337A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346556A (en) * | 2011-07-12 | 2018-07-31 | 纳斯普Ⅲ/Ⅴ有限责任公司 | Single-slice integrated semiconductor structure |
| CN103346068A (en) * | 2013-07-11 | 2013-10-09 | 中国科学院半导体研究所 | Method for preparing high In component AlInN thin film |
| CN105474414A (en) * | 2013-07-29 | 2016-04-06 | Lg伊诺特有限公司 | Light emitting device |
| US10546974B2 (en) | 2013-07-29 | 2020-01-28 | Lg Innotek Co., Ltd. | Light-emitting device |
| CN104319233A (en) * | 2014-09-30 | 2015-01-28 | 东莞市中镓半导体科技有限公司 | InN/LT-AlN combined stress release buffer layer technology in MOCVD |
| CN109244203A (en) * | 2018-09-12 | 2019-01-18 | 华灿光电(苏州）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN109244203B (en) * | 2018-09-12 | 2020-07-07 | 华灿光电(苏州）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN111785806A (en) * | 2020-07-22 | 2020-10-16 | 扬州乾照光电有限公司 | Solar cell and manufacturing method thereof |
| CN111785806B (en) * | 2020-07-22 | 2021-12-21 | 扬州乾照光电有限公司 | Solar cell and manufacturing method thereof |
| CN114141918A (en) * | 2021-11-30 | 2022-03-04 | 江苏第三代半导体研究院有限公司 | Light-emitting diode epitaxial structure suitable for working under high-current condition and preparation method |
| CN114141918B (en) * | 2021-11-30 | 2023-07-18 | 江苏第三代半导体研究院有限公司 | LED epitaxial structure suitable for high-current condition operation and preparation method thereof |
| WO2024056041A1 (en) * | 2022-09-15 | 2024-03-21 | 纳微朗科技(深圳)有限公司 | Epitaxial chip structure |
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