CN109148658B - Ultraviolet L ED structure with AlGaN base grown on Si substrate by combining P L D with MOCVD method and preparation method thereof - Google Patents

Ultraviolet L ED structure with AlGaN base grown on Si substrate by combining P L D with MOCVD method and preparation method thereof Download PDF

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CN109148658B
CN109148658B CN201810764155.0A CN201810764155A CN109148658B CN 109148658 B CN109148658 B CN 109148658B CN 201810764155 A CN201810764155 A CN 201810764155A CN 109148658 B CN109148658 B CN 109148658B
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李国强
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Heyuan Choicore Photoelectric Technology Co ltd
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Abstract

The invention discloses an ultraviolet L ED structure for growing AlGaN base on a Si substrate by combining P L D with an MOCVD method and a preparation method thereof, wherein the ultraviolet L ED structure comprises a Si (111) substrate, a stepping AlGaN buffer layer, a Si-doped n-type AlGaN layer and an Al layer, wherein the stepping AlGaN buffer layer, the Si-doped n-type AlGaN layer and the Al layer are sequentially grown on the Si (111) substrate from bottom to top0.40Ga0.60N/Al0.50Ga0.50The GaN-based LED comprises an N multi-quantum well layer, an AlGaN electron barrier layer, a Mg-doped p-type AlGaN layer and a Mg-doped p-type GaN layer; the stepping AlGaN buffer layer grows on a Si (111) substrate by adopting a pulse laser deposition method; then using MOCVD to dope Si-doped n-type AlGaN layer, Al0.40Ga0.60N/Al0.50Ga0.50The high-quality AlGaN-based ultraviolet L ED epitaxial material is obtained by growing the N multi-quantum well layer, the AlGaN electronic barrier layer, the Mg-doped p-type AlGaN layer and the Mg-doped p-type GaN layer, and the ultraviolet L ED structure has the advantages of high quality, excellent performance and the like.

Description

Ultraviolet L ED structure with AlGaN base grown on Si substrate by combining P L D with MOCVD method and preparation method thereof
Technical Field
The invention relates to an AlGaN-based ultraviolet L ED manufacturing technology, in particular to an AlGaN-based ultraviolet L ED structure growing on a Si substrate by combining a P L D and an MOCVD method and a preparation method thereof.
Background
AlGaN is used as an important component of a third-generation semiconductor material, has the advantages of wide forbidden band width, high thermal conductivity and the like, can be widely applied to the preparation of devices such as a light-emitting diode (L ED), a detector (PD), a high electron mobility device and the like, and plays a key role in the national economic development.
The AlGaN-based ultraviolet L ED has important application in the fields of ultraviolet early warning, ultraviolet phototherapy and the like, at present, ultraviolet L ED is mostly based on AlGaN-based epitaxial materials and chips prepared on a sapphire substrate, and through development of years, the AlGaN-based ultraviolet L ED on the sapphire substrate has been developed to a certain extent, but still faces the problems of poor device heat dissipation, difficult obtainment of large-size substrates, poor AlGaN epitaxial material quality and the like.
In order to solve the problems, Si is used as a substrate material to grow AlGaN-based ultraviolet L ED epitaxial material, on one hand, the thermal conductivity of the Si substrate is as high as 125W/(m.K) and is 5 times that of a sapphire substrate (25W/(m.K)), so that heat generated in a device can be conducted out in time, on the other hand, the Si substrate can realize a large size, such as 12 inches, and the area is 9 times that of the maximum size 4 inches of the sapphire substrate, and in addition, the Si substrate material is cheap, so that the manufacturing cost of a L ED chip can be reduced.
At present, a plurality of researchers carry out the growth of AlGaN-based ultraviolet L ED epitaxial materials on Si (111) substrates and the preparation of chips, and researches find that the AlGaN-based epitaxial materials on Si substrates adopting L ED epitaxial materials through the growth technology Metal Organic Chemical Vapor Deposition (MOCVD) face the problems of poor AlGaN growth quality, low ultraviolet L ED luminous efficiency and the like.
Disclosure of Invention
In the invention, an ultraviolet L ED structure is also called an ultraviolet L ED epitaxial wafer, the ultraviolet L ED epitaxial wafer has the advantages of high quality, excellent performance and the like, and the ultraviolet L ED epitaxial wafer can be used in the fields of military early warning, ultraviolet phototherapy and the like.
Compared with the existing ultraviolet L ED preparation process, the ultraviolet L ED prepared by the method has the advantages of high quality, excellent performance and the like.
One of the purposes of the invention is realized by adopting the following technical scheme that an AlGaN-based ultraviolet L ED structure grows on a Si substrate by combining P L D with an MOCVD method and comprises a Si (111) substrate, a stepping AlGaN buffer layer, a Si-doped n-type AlGaN layer and an Al layer, wherein the stepping AlGaN buffer layer grows on the Si (111) substrate from bottom to top in sequence0.40Ga0.60N/Al0.50Ga0.50The GaN-based LED comprises an N multi-quantum well layer, an AlGaN electron barrier layer, a Mg-doped p-type AlGaN layer and a Mg-doped p-type GaN layer; the stepping AlGaN buffer layer grows on a Si (111) substrate by adopting a pulse laser deposition method; the above-mentionedSi-doped n-type AlGaN layer, Al0.40Ga0.60N/Al0.50Ga0.50The N multi-quantum well layer, the AlGaN electron barrier layer, the Mg-doped p-type AlGaN layer and the Mg-doped p-type GaN layer are grown on the corresponding stepping AlGaN buffer layer, the Si-doped N-type AlGaN layer and the Al layer respectively by adopting a metal organic gas phase deposition method0.40Ga0.60N/Al0.50Ga0.50And the N multi-quantum well layer, the AlGaN electronic barrier layer and the Mg-doped p-type AlGaN layer are grown.
Further, the stepping AlGaN buffer layer is an AlGaN buffer layer with gradually changed Al components, the growth temperature of the stepping AlGaN buffer layer on the Si (111) substrate is 600-800 ℃, the number of layers of the stepping AlGaN buffer layer is 1-3, the Al components are changed at 0-0.8, and the total thickness of the film is 200-800 nm.
Further, the growth temperature of the Si-doped n-type AlGaN layer is 1000-1100 ℃, and the doping concentration of Si is 5 × 1020-7×1020cm-3The film thickness is 2500-3500 nm.
Further, the Al0.40Ga0.60N/Al0.50Ga0.50The N multi-quantum well layer comprises Al grown on the Si-doped N-type AlGaN layer0.40Ga0.60N quantum well layer and Al layer grown on the same0.40Ga0.60Al on N quantum well layer0.50Ga0.50An N quantum barrier layer; the Al is0.40Ga0.60The growth temperature of the N quantum well layer is 800-900 ℃, and the thickness is 3-5 nm; the Al is0.50Ga0.50The growth temperature of the N quantum barrier layer is 900-1000 ℃, and the thickness of the N quantum barrier layer is 10-15 nm.
Furthermore, the growth temperature of the AlGaN electron blocking layer is 1000-1100 ℃, and the thickness is 10-30 nm.
Further, the growth temperature of the Mg-doped p-type AlGaN layer is 1000-1100 ℃, and the doping concentration of Mg is 1 × 1019-3×1019cm-3The thickness of the film is 150-250 nm.
Further, the growth temperature of the Mg-doped p-type GaN layer is 1000-1100 ℃, and the doping concentration is 4 × 1019-6×1019cm-3The thickness of the film is 20-40 nm.
The second purpose of the invention is realized by adopting the following technical scheme that the preparation method of the ultraviolet L ED structure for growing the AlGaN base on the Si substrate by combining the P L D with the MOCVD method comprises the following steps:
preparing a stepping AlGaN buffer layer: growing a stepping AlGaN buffer layer on a Si (111) substrate by adopting a pulse laser deposition method, wherein the growth temperature is 600-700 ℃, the laser energy is 200-250mJ, the laser frequency is 5-30Hz, the air pressure is 1-30mTorr, the number of layers is 1-3, the Al component is changed at 0-0.8, and the total thickness of the film is 200-800 nm;
preparing Si-doped n-type AlGaN layer by growing the n-type doped AlGaN layer on the stepped AlGaN buffer layer by adopting a metal organic vapor deposition method, wherein the growth temperature is 1000-1100 ℃, and the doping concentration of Si is 5 × 1020-7×1020cm-3The film thickness is 2500-;
Al0.40Ga0.60N/Al0.50Ga0.50preparation of an N multi-quantum well layer: growing Al on the Si-doped n-type AlGaN layer by adopting a metal organic vapor deposition method0.40Ga0.60N/Al0.50Ga0.50N multi quantum well layer of said Al0.40Ga0.60The growth temperature of the N quantum well layer is 800-900 ℃, and the thickness is 3-5 nm; the Al is0.50Ga0.50The growth temperature of the N quantum barrier layer is 900-;
preparing an AlGaN electron blocking layer: in Al0.50Ga0.50Growing an AlGaN electronic barrier layer on the N quantum barrier layer by adopting a metal organic vapor deposition method, wherein the growth temperature is 1000-1100 ℃, and the thickness is 10-30 nm;
preparing a Mg-doped p-type AlGaN layer by growing the Mg-doped p-type AlGaN layer on an AlGaN electron barrier layer by adopting a metal organic vapor deposition method, wherein the growth temperature is 1000-1100 ℃, and the doping concentration of Mg is 1 × 1019-3×1019cm-3The thickness of the film is 150-250 nm;
preparing a Mg-doped p-type GaN layer by growing the Mg-doped p-type GaN layer on the Mg-doped p-type AlGaN layer by adopting a metal organic vapor deposition method, wherein the growth temperature is 1000-1100 ℃, and the doping concentration is 4 × 1019-6×1019cm-3The thickness of the film is 20-40 nm.
Compared with the prior art, the invention has the beneficial effects that:
the high-quality AlGaN-based ultraviolet L ED epitaxial material grows on a Si (111) substrate by adopting a pulsed laser deposition (P L D) technology and a Metal Organic Chemical Vapor Deposition (MOCVD) technology, on one hand, the AlGaN plasma generated by adopting a P L D ablation target material has higher kinetic energy and therefore has very strong mobility, so that the capability of Al atoms being merged into AlGaN is improved, meanwhile, the interface reaction between AlGaN and Si can be inhibited by P L D low-temperature epitaxy, a high-quality stepping AlGaN buffer layer is obtained, and then an N-type AlGaN layer doped with Si and Al are formed by adopting MOCVD0.40Ga0.60N/Al0.50Ga0.50The method comprises the following steps of growing a N multi-quantum well, an AlGaN electron blocking layer, a Mg-doped p-type AlGaN layer and a Mg-doped p-type GaN layer to obtain a high-quality AlGaN-based ultraviolet L ED epitaxial material, designing an AlGaN buffer layer, filtering dislocation by designing the components, the layers, the thickness and the like of AlGaN, and reducing the dislocation introduced into a light emitting layer.
Drawings
FIG. 1 is a schematic diagram of an ultraviolet L ED structure according to a preferred embodiment of the present invention;
FIG. 2 is a graph of the X-ray rocking back of the AlGaN (10-12) plane of an AlGaN-based ultraviolet L ED structure grown on a Si (111) substrate, prepared in example 1 of the present invention;
FIG. 3 is a graph of the X-ray rocking back of the AlGaN (10-12) plane of an AlGaN-based ultraviolet L ED structure grown on a Si (111) substrate, prepared in example 2 of the present invention;
FIG. 4 is a graph of the X-ray rocking back of the AlGaN (10-12) plane of an AlGaN-based ultraviolet L ED structure grown on a Si (111) substrate prepared in example 3 of the present invention;
FIG. 5 is a photoluminescence map of an AlGaN-based deep ultraviolet L ED structure grown on a Si (111) substrate prepared in example 1 of the present invention;
FIG. 6 is a photoluminescence map of an AlGaN-based deep ultraviolet L ED structure grown on a Si (111) substrate prepared in example 2 of the present invention;
fig. 7 is a photoluminescence map of an AlGaN-based deep ultraviolet L ED structure grown on a Si (111) substrate prepared in example 3 of the present invention.
In fig. 1: 1. a Si (111) substrate; 2. stepping the AlGaN buffer layer; 3. a Si-doped n-type AlGaN layer; 4. al (Al)0.40Ga0.60N/Al0.50Ga0.50An N multi-quantum well layer; 5. an AlGaN electron blocking layer; 6. a Mg-doped p-type AlGaN layer; 7. a Mg-doped p-type GaN layer.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that any combination of the embodiments or technical features described below can be used to form a new embodiment without conflict.
In the present invention, all parts and percentages are by weight, unless otherwise specified, and the equipment and materials used are commercially available or commonly used in the art. The methods in the following examples are conventional in the art unless otherwise specified.
As shown in FIG. 1, the P L D combined with MOCVD method for growing AlGaN-based ultraviolet L ED structure on Si substrate comprises a Si (111) substrate 1, a stepping AlGaN buffer layer 2 growing on the Si (111) substrate from bottom to top, a Si-doped n-type AlGaN layer 3, and Al0.40Ga0.60N/Al0.50Ga0.50The GaN-based deep ultraviolet epitaxial structure comprises an N multi-quantum well layer 4, an AlGaN electronic barrier layer 5, an Mg-doped P-type AlGaN layer 6 and an Mg-doped P-type GaN layer 7, wherein the stepping AlGaN buffer layer grows on a Si (111) substrate by adopting a pulse laser deposition method (P L D), and the rest layers grow a subsequent AlGaN-based deep ultraviolet L ED epitaxial structure by adopting a metal organic vapor deposition method, namely the Si-doped N-type AlGaN layer and the Al-doped P-type AlGaN layer0.40Ga0.60N/Al0.50Ga0.50The N multi-quantum well layer, the AlGaN electronic barrier layer, the Mg-doped p-type AlGaN layer and the Mg-doped p-type GaN layer are respectively grown on the corresponding stepping AlGaN buffer layer, the Si-doped N-type AlGaN layer and the Al layer by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method0.40Ga0.60N/Al0.50Ga0.50And the N multi-quantum well layer, the AlGaN electronic barrier layer and the Mg-doped p-type AlGaN layer are grown.
As a further implementation mode, the stepping AlGaN buffer layer is an AlGaN buffer layer with gradually changed Al composition, the growth temperature of the stepping AlGaN buffer layer on a Si (111) substrate is 600-800 ℃, the number of layers of the stepping AlGaN buffer layer is 1-3, the Al composition is changed between 0-0.8, and the total thickness of the film is 200-800 nm.
As a further implementation mode, the growth temperature of the Si-doped n-type AlGaN layer is 1000-1100 ℃, and the doping concentration of Si is 5 × 1020-7×1020cm-3The film thickness is 2500-3500 nm.
As a further embodiment, the Al0.40Ga0.60N/Al0.50Ga0.50The N multi-quantum well layer comprises Al grown on the Si-doped N-type AlGaN layer0.40Ga0.60N quantum well layer and Al layer grown on the same0.40Ga0.60Al on N quantum well layer0.50Ga0.50An N quantum barrier layer; the Al is0.40Ga0.60The growth temperature of the N quantum well layer is 800-900 ℃, and the thickness is 3-5 nm; the Al is0.50Ga0.50The growth temperature of the N quantum barrier layer is 900-1000 ℃, and the thickness of the N quantum barrier layer is 10-15 nm.
As a further implementation mode, the growth temperature of the AlGaN electron blocking layer is 1000-1100 ℃, and the thickness is 10-30 nm.
As a further implementation mode, the growth temperature of the Mg-doped p-type AlGaN layer is 1000-1100 ℃, and the doping concentration of Mg is 1 × 1019-3×1019cm-3The thickness of the film is 150-250 nm.
As a further implementation mode, the growth temperature of the Mg-doped p-type GaN layer is 1000-1100 ℃, and the doping concentration is 4 × 1019-6×1019cm-3Films ofThe thickness is 20-40 nm.
The preparation method of the ultraviolet L ED structure for growing the AlGaN base on the Si substrate by combining the P L D with the MOCVD method comprises the following steps:
preparing a stepping AlGaN buffer layer: growing a stepping AlGaN buffer layer on a Si (111) substrate by adopting a pulse laser deposition method, wherein the growth temperature is 600-700 ℃, the laser energy is 200-250mJ, the laser frequency is 5-30Hz, the air pressure is 1-30mTorr, the number of layers is 1-3, the Al component is changed at 0-0.8, and the total thickness of the film is 200-800 nm; preferably, the conditions of the pulsed laser deposition method are that the growth temperature is 650-.
Preparing Si-doped n-type AlGaN layer by growing the n-type doped AlGaN layer on the stepped AlGaN buffer layer by adopting a metal organic vapor deposition method, wherein the growth temperature is 1000-1100 ℃, and the doping concentration of Si is 5 × 1020-7×1020cm-3The film thickness is 2500-;
Al0.40Ga0.60N/Al0.50Ga0.50preparation of an N multi-quantum well layer: growing Al on the Si-doped n-type AlGaN layer by adopting a metal organic vapor deposition method0.40Ga0.60N/Al0.50Ga0.50N multi quantum well layer of said Al0.40Ga0.60The growth temperature of the N quantum well layer is 800-900 ℃, and the thickness is 3-5 nm; the Al is0.50Ga0.50The growth temperature of the N quantum barrier layer is 900-;
preparing an AlGaN electron blocking layer: in Al0.50Ga0.50Growing an AlGaN electronic barrier layer on the N quantum barrier layer by adopting a metal organic vapor deposition method, wherein the growth temperature is 1000-1100 ℃, and the thickness is 10-30 nm;
preparing a Mg-doped p-type AlGaN layer by growing the Mg-doped p-type AlGaN layer on an AlGaN electron barrier layer by adopting a metal organic vapor deposition method, wherein the growth temperature is 1000-1100 ℃, and the doping concentration of Mg is 1 × 1019-3×1019cm-3The thickness of the film is 150-250 nm;
preparation of a Mg-doped p-type GaN layer: applying metal organic on the Mg-doped p-type AlGaN layerGrowing a Mg-doped p-type GaN layer by a vapor phase deposition method, wherein the growth temperature is 1000-1100 ℃, and the doping concentration is 4 × 1019-6×1019cm-3The thickness of the film is 20-40 nm.
The following are specific examples of the present invention, and raw materials, equipments and the like used in the following examples can be obtained by purchasing them unless otherwise specified.
Example 1:
a high-quality AlGaN-based deep ultraviolet L ED structure epitaxially grown on a Si (111) substrate, and a preparation method of the deep ultraviolet L ED structure comprises the following steps:
1) preparing a stepping AlGaN buffer layer, namely growing the stepping AlGaN buffer layer on a Si (111) substrate by adopting a P L D technology, wherein the growth temperature is 600 ℃, the laser energy is 220mJ, the laser frequency is 15Hz, the air pressure is 15mTorr, the number of layers is 1, the Al component is 0, and the total thickness of the film is 200 nm;
2) preparing Si-doped n-type AlGaN layer by growing the Si-doped n-type AlGaN layer on the stepped AlGaN buffer layer by adopting MOCVD technology, wherein the growth temperature is 1000 ℃, and the doping concentration of Si is 5 × 1020cm-3The thickness of the film is 2500 nm;
3)Al0.40Ga0.60N/Al0.50Ga0.50preparation of an N multi-quantum well layer: growing Al on the n-type doped AlGaN layer by adopting the MOCVD technology0.40Ga0.60N/Al0.50Ga0.50An N multi-quantum well layer; al (Al)0.40Ga0.60The growth temperature of the N quantum well layer is 800 ℃, and the thickness of the N quantum well layer is 3 nm; al (Al)0.50Ga0.50The growth temperature of the N quantum barrier layer is 900 ℃, and the thickness of the N quantum barrier layer is 10 nm;
4) preparing an AlGaN electron blocking layer: growing an AlGaN electronic barrier layer on the multi-quantum well layer by adopting an MOCVD technology, wherein the growth temperature is 1000 ℃, and the thickness is 10 nm;
5) preparing Mg-doped p-type AlGaN layer by growing the Mg-doped p-type AlGaN layer on the electron barrier layer by adopting MOCVD technology, wherein the growth temperature is 1000 ℃, and the doping concentration of Mg is 1 × 1019cm-3The thickness of the film is 150 nm;
6) of Mg-doped p-type GaN layersThe preparation method comprises growing a Mg-doped p-type GaN layer on the Mg-doped p-type AlGaN layer at 1000 deg.C and Mg doping concentration of 4 × 1019cm-3The film thickness was 20 nm.
Example 2:
a high-quality AlGaN-based deep ultraviolet L ED structure epitaxially grown on a Si (111) substrate, and a preparation method of the deep ultraviolet L ED structure comprises the following steps:
1) preparing a stepping AlGaN buffer layer, namely growing the stepping AlGaN buffer layer on a Si (111) substrate by adopting a P L D technology, wherein the growth temperature is 600 ℃, the laser energy is 220mJ, the laser frequency is 15Hz, the air pressure is 15mTorr, the number of layers is 3, the A L components of each layer from bottom to top are respectively 0, 0.28 and 0.64, and the thicknesses of each layer are respectively 200nm, 150nm and 450 nm;
2) preparing Si-doped n-type AlGaN layer by growing the Si-doped n-type AlGaN layer on the stepping AlGaN buffer layer by adopting the MOCVD technology, wherein the growth temperature is 1100 ℃, and the doping concentration is 7 × 1020cm-3The thickness of the film is 3500 nm;
3)Al0.40Ga0.60N/Al0.50Ga0.50preparation of an N multi-quantum well layer: growing Al on the Si-doped n-type AlGaN layer by adopting the MOCVD technology0.40Ga0.60N/Al0.50Ga0.50An N multi-quantum well layer; al (Al)0.40Ga0.60The growth temperature of the N quantum well layer is 900 ℃, and the thickness of the N quantum well layer is 5 nm; al (Al)0.50Ga0.50The growth temperature of the N quantum barrier layer is 1000 ℃, and the thickness of the N quantum barrier layer is 15 nm;
4) preparing an AlGaN electron blocking layer: growing an AlGaN electronic barrier layer on the multi-quantum well layer by adopting an MOCVD technology, wherein the growth temperature is 1100 ℃, and the thickness is 30 nm;
5) preparing a Mg-doped p-type AlGaN layer by growing the Mg-doped p-type AlGaN layer on an electron barrier layer by adopting the MOCVD technology, wherein the growth temperature is 1100 ℃, and the doping concentration of Mg is 3 × 1019cm-3The thickness of the film is 250 nm;
6) preparing a Mg-doped p-type GaN layer by growing a Mg-doped p-type GaN contact layer on the Mg-doped p-type AlGaN layer by adopting an MOCVD (metal organic chemical vapor deposition) technology, wherein the growth temperature is 1100 ℃, and the doping concentration is 6 × 1019cm-3The film thickness was 40 nm.
Example 3:
a high-quality AlGaN-based deep ultraviolet L ED structure epitaxially grown on a Si (111) substrate, and a preparation method of the deep ultraviolet L ED structure comprises the following steps:
1) preparing a stepping AlGaN buffer layer, namely growing the stepping AlGaN buffer layer on a Si (111) substrate by adopting a P L D technology, wherein the growth temperature is 600 ℃, the laser energy is 220mJ, the laser frequency is 15Hz, the air pressure is 15mTorr, the number of layers is 2, the A L components of each layer from bottom to top are respectively 0.1 and 0.8, and the thicknesses of each layer are respectively 250 and 450 nm;
2) preparing Si-doped n-type AlGaN layer by growing the Si-doped n-type AlGaN layer on the stepped AlGaN buffer layer by adopting the MOCVD technology, wherein the growth temperature is 1050 ℃, and the doping concentration is 6 × 1020cm-3The thickness of the film is 3000 nm;
3)Al0.40Ga0.60N/Al0.50Ga0.50preparation of an N multi-quantum well layer: growing Al on the Si-doped n-type AlGaN layer by adopting the MOCVD technology0.40Ga0.60N/Al0.50Ga0.50An N multi-quantum well layer; al (Al)0.40Ga0.60The growth temperature of the N quantum well layer is 550 ℃, and the thickness of the N quantum well layer is 4 nm; al (Al)0.50Ga0.50The growth temperature of the N quantum barrier layer is 950 ℃, and the thickness of the N quantum barrier layer is 12 nm;
4) preparing an AlGaN electron blocking layer: growing an AlGaN electronic barrier layer on the multi-quantum well layer by adopting an MOCVD technology, wherein the growth temperature is 1050 ℃, and the thickness is 20 nm;
5) preparing Mg-doped p-type AlGaN layer by growing the Mg-doped p-type AlGaN layer on the electron barrier layer by adopting the MOCVD technology, wherein the growth temperature is 1050 ℃, and the doping concentration of Mg is 2 × 1019cm-3The thickness of the film is 200 nm;
6) preparing a Mg-doped p-type GaN layer by growing a Mg-doped p-type GaN contact layer on the Mg-doped p-type AlGaN layer by adopting the MOCVD technology, wherein the growth temperature is 1050 ℃, and the doping concentration is 5 × 1019cm-3The film thickness was 30 nm.
Effect evaluation and Performance detection
1. The AlGaN-based deep ultraviolet L ED epitaxial materials prepared in the examples 1-3 were tested by using an X-ray rocking curve.
FIG. 2 is a graph showing the X-ray rocking curve of AlGaN (10-12) surface of AlGaN-based ultraviolet L ED structure grown on Si (111) substrate prepared in example 1 of the present invention, wherein the half-width value of AlGaN (10-12) measured by the X-ray rocking curve is less than 350arcsec, as shown in FIG. 2.
FIG. 3 is a graph showing the X-ray rocking curve of AlGaN (10-12) surface of AlGaN-based ultraviolet L ED structure grown on Si (111) substrate prepared in example 2 of the present invention, wherein the half-width value of AlGaN (10-12) measured by the X-ray rocking curve is lower than 358arcsec as shown in FIG. 3.
FIG. 4 is a graph showing the X-ray rocking curve of AlGaN (10-12) surface of AlGaN-based ultraviolet L ED structure grown on Si (111) substrate prepared in example 3 of the present invention, wherein the half-width value of AlGaN (10-12) measured by the X-ray rocking curve is less than 360arcsec, as shown in FIG. 4.
The results show that dislocation can be effectively filtered by optimizing the structural design and the growth process of the buffer layer, so that the AlGaN-based deep ultraviolet L ED epitaxial material with high quality is epitaxially grown on the Si (111) substrate.
2. The AlGaN-based ultraviolet L ED epitaxial materials prepared in examples 1-3 were tested by photoluminescence.
Fig. 5 is a photoluminescence chart of an AlGaN-based deep ultraviolet L ED structure grown on a Si (111) substrate prepared in example 1 of the present invention, as shown in fig. 5, the emission peak of the L ED epitaxial wafer measured by electroluminescence is 279 nm.
Fig. 6 is a photoluminescence graph of an AlGaN-based deep ultraviolet L ED structure grown on a Si (111) substrate prepared in example 2 of the present invention, as shown in fig. 6, the light emission peak of the L ED epitaxial wafer measured by electroluminescence is 276 nm.
Fig. 7 is a photoluminescence chart of an AlGaN-based deep ultraviolet L ED structure grown on a Si (111) substrate according to example 3 of the present invention, as shown in fig. 7, the light emission peak of the L ED epitaxial wafer measured by electroluminescence is 278 nm.
The photoluminescence spectrum result shows that the AlGaN-based ultraviolet L ED epitaxial material with high performance is epitaxially grown on the Si (111) substrate.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.

Claims (7)

  1. The ultraviolet L ED structure is characterized by comprising a Si (111) substrate, a stepping AlGaN buffer layer, a Si-doped n-type AlGaN layer and Al, wherein the stepping AlGaN buffer layer, the Si-doped n-type AlGaN layer and the Al are sequentially grown on the Si (111) substrate from bottom to top0.40Ga0.60N/Al0.50Ga0.50The GaN-based LED comprises an N multi-quantum well layer, an AlGaN electron barrier layer, a Mg-doped p-type AlGaN layer and a Mg-doped p-type GaN layer; the stepping AlGaN buffer layer grows on a Si (111) substrate by adopting a pulse laser deposition method; the Si-doped n-type AlGaN layer and Al0.40Ga0.60N/Al0.50Ga0.50The N multi-quantum well layer, the AlGaN electron barrier layer, the Mg-doped p-type AlGaN layer and the Mg-doped p-type GaN layer are grown on the corresponding stepping AlGaN buffer layer, the Si-doped N-type AlGaN layer and the Al layer respectively by adopting a metal organic gas phase deposition method0.40Ga0.60N/Al0.50Ga0.50Growing the N multi-quantum well layer, the AlGaN electronic barrier layer and the Mg-doped p-type AlGaN layer;
    the stepping AlGaN buffer layer is an AlGaN buffer layer with gradually changed Al components, the growth temperature of the stepping AlGaN buffer layer on a Si (111) substrate is 600-800 ℃, the number of layers of the stepping AlGaN buffer layer is 1-3, the Al components are changed at 0-0.8, and the total thickness of the film is 200-800 nm.
  2. 2. The P L D combined with MOCVD method for growing AlGaN-based UV L ED structure on Si substrate as claimed in claim 1, wherein the growth temperature of Si-doped n-type AlGaN layer is 1000-1100 ℃, and the doping concentration of Si is 5 × 1020-7×1020cm-3The film thickness is 2500-3500 nm.
  3. 3. P L D combined with MOCVD method according to claim 1 for growing AlGaN on Si substrateBasic ultraviolet L ED structure, characterized in that the Al is0.40Ga0.60N/Al0.50Ga0.50The N multi-quantum well layer comprises Al grown on the Si-doped N-type AlGaN layer0.40Ga0.60N quantum well layer and Al layer grown on the same0.40Ga0.60Al on N quantum well layer0.50Ga0.50An N quantum barrier layer; the Al is0.40Ga0.60The growth temperature of the N quantum well layer is 800-900 ℃, and the thickness is 3-5 nm; the Al is0.50Ga0.50The growth temperature of the N quantum barrier layer is 900-1000 ℃, and the thickness of the N quantum barrier layer is 10-15 nm.
  4. 4. The P L D combined with MOCVD method of claim 1 for growing AlGaN-based UV L ED structure on Si substrate, wherein the growth temperature of the AlGaN electron blocking layer is 1000-1100 ℃, and the thickness is 10-30 nm.
  5. 5. The P L D combined with MOCVD method for growing AlGaN-based UV L ED structure on Si substrate as claimed in claim 1, wherein the growth temperature of the Mg-doped P-type AlGaN layer is 1000-1100 ℃, and the Mg doping concentration is 1 × 1019-3×1019cm-3The thickness of the film is 150-250 nm.
  6. 6. The P L D combined with MOCVD method for growing AlGaN-based UV L ED structure on Si substrate as claimed in claim 1, wherein the growth temperature of the Mg doped P-type GaN layer is 1000-1100 ℃, and the doping concentration is 4 × 1019-6×1019cm-3The thickness of the film is 20-40 nm.
  7. The preparation method of the ultraviolet L ED structure for growing the AlGaN base on the Si substrate by combining the P L D with the MOCVD method is characterized by comprising the following steps of:
    preparing a stepping AlGaN buffer layer: growing a stepping AlGaN buffer layer on a Si (111) substrate by adopting a pulse laser deposition method, wherein the growth temperature is 600-700 ℃, the laser energy is 200-250mJ, the laser frequency is 5-30Hz, the air pressure is 1-30mTorr, the number of layers is 1-3, the Al component is changed at 0-0.8, and the total thickness of the film is 200-800 nm;
    preparing Si-doped n-type AlGaN layer by growing the n-type doped AlGaN layer on the stepped AlGaN buffer layer by adopting a metal organic vapor deposition method, wherein the growth temperature is 1000-1100 ℃, and the doping concentration of Si is 5 × 1020-7×1020cm-3The film thickness is 2500-;
    Al0.40Ga0.60N/Al0.50Ga0.50preparation of an N multi-quantum well layer: growing Al on the Si-doped n-type AlGaN layer by adopting a metal organic vapor deposition method0.40Ga0.60N/Al0.50Ga0.50N multi quantum well layer of said Al0.40Ga0.60The growth temperature of the N quantum well layer is 800-900 ℃, and the thickness is 3-5 nm; the Al is0.50Ga0.50The growth temperature of the N quantum barrier layer is 900-;
    preparing an AlGaN electron blocking layer: in Al0.50Ga0.50Growing an AlGaN electronic barrier layer on the N quantum barrier layer by adopting a metal organic vapor deposition method, wherein the growth temperature is 1000-1100 ℃, and the thickness is 10-30 nm;
    preparing a Mg-doped p-type AlGaN layer by growing the Mg-doped p-type AlGaN layer on an AlGaN electron barrier layer by adopting a metal organic vapor deposition method, wherein the growth temperature is 1000-1100 ℃, and the doping concentration of Mg is 1 × 1019-3×1019cm-3The thickness of the film is 150-250 nm;
    preparing a Mg-doped p-type GaN layer by growing the Mg-doped p-type GaN layer on the Mg-doped p-type AlGaN layer by adopting a metal organic vapor deposition method, wherein the growth temperature is 1000-1100 ℃, and the doping concentration is 4 × 1019-6×1019cm-3The thickness of the film is 20-40 nm.
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