CN105810725A - Silicon-based gallium nitride semiconductor wafer and manufacturing method thereof - Google Patents
Silicon-based gallium nitride semiconductor wafer and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a silicon-based gallium nitride semiconductor wafer and a manufacturing method thereof. An AlN film is formed on a Si substrate layer. A plurality of AlGaN layers and at least one SiNx interlayer, adopted as an AlGaN buffer layer, are formed on the Si substrate layer with the AlN film. A GaN layer is formed on the AlGaN buffer layer. The SiNx interlayer is arranged in the AlGaN layers, or between adjacent AlGaN layers, or between the AlGaN layers and the GaN layer. According to the technical scheme of the invention, through introducing the SiNx interlayer into the AlGaN layers, the dislocation propagation of the AlN film on the Si substrate layer can be prevented. Therefore, the crystal quality of the silicon-based gallium nitride is improved.
Description
Technical field
The invention belongs to new semiconductor materials field, relate to Si(silicon) substrate GaN (gallium nitride) material be used for formed in photoelectric device and microelectronic component application.Die/wafer configuration is used to improve AlGaN(aluminum gallium nitride additionally, the present invention relates to) and the method for GaN crystal quality.
Background technology
Owing to GaN Large-size crystal growth is extremely difficult, the device of currently all maturation is all by sapphire or SiC(carborundum) based on foreign substrate.But from Lattice Matching and conductance, thermal conductance characteristic, sapphire is not also desirable hetero-epitaxy substrate；Although and lattice mismatch is less than Sapphire Substrate between SiC substrate and GaN, but the price of its processing difficulties and costliness also limit the further application and development of this substrate.Si substrate is compared with both the above substrate, except lattice mismatch and thermal mismatching are relatively big, other aspects compare the requirement meeting GaN material growth, such as advantages such as low cost, large scale, high-quality, electric conductivity, and the development of the substrate GaN-based material of Si and device will further facilitate the integrated of GaN base device and traditional Si base device technique, it is believed that be the most promising GaN substrate material.
But extension GaN there is also many problems needing to solve on Si substrate.First, bigger between Si substrate and GaN thermal expansion coefficient difference causes bigger thermal mismatching.The thermal coefficient of expansion of Si is 3.59 × 10-6/ K, and the thermal coefficient of expansion of GaN is 5.59 × 10-6/ K, the two differs greatly, and after causing high growth temperature, the process epitaxial layers of cooling will bear very big tensile stress, owing to the thickness of epitaxial layer is much smaller than substrate thickness, so epitaxial layer can crack.Produce melt back it addition, Ga atom can also be diffused into Si substrate surface and destroy interface, reduce the crystal mass of epitaxial layer.The most important thing is that between Si and GaN, lattice exists larger difference, its lattice mismatch is 17%, and the lattice mismatch in growth course is introduced into a large amount of dislocation.In order to solve the problems referred to above, research worker has attempted the methods such as low-temperature AlN interlayer, gradient AlGaN cushion and super-lattice buffer layer respectively, solves the melt back problem of crackle that thermal mismatching causes and Ga, but the dislocation that lattice mismatch causes but is difficult to be suppressed.Dislocation is as a kind of non-composite center and leak channel, it is possible to seriously reduce the key performance of the semiconductor device such as luminous efficiency and proof voltage of photoelectric device.
Summary of the invention
The present invention, by providing a kind of semiconductor chip structure and growing method, reduces dislocation during Si Grown GaN layer.
In order to achieve the above object, a technical scheme of the present invention is to provide a kind of semiconductor wafer, including:
Si substrate layer, this Si substrate layer is formed with AlN thin film；
Containing one or more SiNx(silicon nitrides) the AlGaN cushion of interlayer, described AlGaN cushion is formed on described AlN thin film；
GaN layer, it is formed on described AlGaN cushion.
Preferably, described AlGaN cushion comprises two or more AlGaN layer, and the chemical formula of each of which AlGaN layer is AlyGa1-yN, the y value in different AlGaN layer is in different size, and the value of y is 0.1 ~ 0.7.
Preferably, described AlGaN cushion is al composition gradient, and in this AlGaN cushion, in the AlGaN layer of Si substrate layer side, al composition is the highest, and in the AlGaN layer of GaN layer side, al composition is minimum.
Preferably, each AlGaN layer of described AlGaN cushion is each formed with one or more described SiNx interlayer；
Or, the part AlGaN layer in described AlGaN cushion is formed one or more described SiNx interlayer, other AlGaN layer in this AlGaN cushion does not have SiNx interlayer simultaneously.
Preferably, said two or two or more AlGaN layer are involuntary doping.
Preferably, n-1 described SiNx interlayer is formed in same AlGaN layer, and described AlGaN layer is divided into n the part that thickness is equal, and n is positive integer, be more than or equal to 2 and less than or equal to 10.
Preferably, has at least a SiNx interlayer between the interface of two adjacent AlGaN layer；Or, between AlGaN layer and the interface of described GaN layer of one of them SiNx interlayer the top in described AlGaN cushion.
Preferably, the thickness of at least one SiNx interlayer is 0.1 ~ 1nm.
Another technical scheme of the present invention is to provide the manufacture method of a kind of semiconductor wafer:
By PVD or MOCVD mode, Si substrate layer forms AlN thin film；
By MOCVD mode, on the Si substrate layer containing AlN thin film, form multiple AlGaN layer and at least one SiNx interlayer as AlGaN cushion, the arbitrary value that numerical value is 0.5 ~ 2 of x in described SiNx interlayer；And, described AlGaN cushion is formed GaN layer；
Wherein, the position of each SiNx interlayer, is any one in following position: be arranged in any one AlGaN layer, or between the interface of adjacent AlGaN layer, or between AlGaN layer and the interface of GaN layer.
Preferably, the described process forming AlGaN cushion includes:
A described AlGaN layer is formed one or more SiNx interlayer,
The step of the one or more SiNx interlayer of this formation comprises procedure below:
A1, growth d/n thickness AlGaN layer after, grow SiNx interlayer；Wherein, n numerical value is be more than or equal to 2 and less than or equal to 10；
After a2, described SiNx sandwich growth reach setting thickness, continued growth AlGaN layer；
If the integral thickness of a3 AlGaN layer reaches setting value d, this AlGaN layer grows another AlGaN layer or growth GaN layer；If the integral thickness of AlGaN layer is not reaching to setting value d, perform step a1.
Preferably, the described process forming AlGaN cushion includes:
SiNx interlayer is formed in the interface of an AlGaN layer AlGaN layer adjacent with other or with the interface of adjacent GaN layer
The step of this formation SiNx interlayer comprises procedure below:
B1, growth AlGaN layer grow SiNx interlayer after reaching the setting value d of thickness；
After b2, described SiNx sandwich growth reach setting thickness, grow another AlGaN layer or growth GaN layer.
Preferably, described SiNx interlayer epitaxial growth in MOCVD device, the depositing temperature of SiNx interlayer is 1000 ~ 1250 degrees Celsius.
Preferably, described SiNx interlayer epitaxially grown process in MOCVD device includes:
By in the growth chamber of MOCVD device, import silane and ammonia that volume ratio is 1:20 to 1:300 to grow described SiNx interlayer；Wherein, silane diluted in hydrogen is to 200ppm.
Preferably, each described AlGaN layer has chemical formula AlyGa1-yN, and in each AlGaN layer, the numerical value of y is 0.1 ~ 0.7；Adjacent AlGaN layer has different al compositions.
Preferably, the thickness of at least one described SiNx interlayer is 0.1 ~ 1nm.
Compared with prior art, the present invention by introducing the SiNx interlayer that such as thickness is 0.1 ~ 1nm in AlGaN layer, it is suppressed that the dislocation propagation in AlN thin film on Si substrate, thus improve the crystal mass of Si base GaN.Adopt the Si base GaN semiconductor wafer of the present invention, it is possible to be widely used in opto-electronic device and microelectronic component.
Accompanying drawing explanation
Fig. 1 is the AlGaN/GaN semiconductor chip structure schematic diagram adding SiNx interlayer in one embodiment of the invention in AlGaN；
Fig. 2 is the AlGaN/GaN semiconductor chip structure schematic diagram adding SiNx interlayer in one embodiment of the invention between AlGaN layer and between AlGaN and GaN layer；
Fig. 3 is the AlGaN/GaN semiconductor chip structure schematic diagram only adding multiple SiNx interlayer in one embodiment of the invention between an AlGaN layer；
Fig. 4 is the AlGaN/GaN semiconductor chip structure schematic diagram adding SiNx interlayer in one embodiment of the invention in AlGaN and between AlGaN layer.
Detailed description of the invention
Hereafter specific embodiment will be described in detail referring to accompanying drawing.But, the present invention can implement and should not be construed as limited by embodiments set forth herein in different forms, but theses embodiments are provided so that the present invention more substrate and detailed, and will fully convey the scope of the invention to those skilled in the art.
The invention provides a kind of semiconductor wafer, be provided with: comprise AlN(aluminium nitride) the Si(silicon of thin film) substrate layer；There is one or more SiNx(silicon nitride) cushion of interlayer；And GaN(gallium nitride) layer.Wherein, described AlN thin film is formed on Si substrate layer；Cushion is on AlN thin film, and cushion comprises multiple AlGaN(aluminum gallium nitride) layer, described GaN layer is formed on the AlGaN layer of the top.
It is existing that present invention will be further described.The inventors discovered that on the silicon substrate comprising AlN thin film, grow the AlGaN cushion of some series, flawless GaN layer may finally be obtained, but wherein comprise substantial amounts of dislocation.Through characteristic according to dislocation, the dislocation in GaN layer, essentially from AlGaN cushion, thereby through the dislocation density reduced in AlGaN cushion, can reduce the dislocation in GaN layer.
The present invention introduces SiNx interlayer in AlGaN layer, at a higher temperature (such as more than 1000 degrees Celsius), imports SiH4(silane) and NH3(ammonia), at high temperature silane and ammonia are decomposed, obtain SiNx interlayer, chemical reaction is there is in the Si in SiNx interlayer with the Ga in AlGaN layer, particularly the Si in the SiNx layer of crystal Dislocations position diffuses more readily into AlGaN layer, is formed some extremely small pits by chemical reaction, afterwards again extension AlGaN layer or GaN layer time, dislocation just can terminate in these pits, thus can effectively reduce the dislocation in GaN layer.
Referred herein to, in SiNx interlayer, the value of x can be the arbitrary value of 0.5 ~ 2, depends on silane and ammonia ratio and reaction temperature.Preferably, the ratio of the volume ratio of silane and ammonia is 1:20 to 1:300, and wherein silane diluted in hydrogen is to 200ppm.The SiNx interlayer comprised in whole semiconductor wafer can be one or more.Preferably, the thickness of at least one SiNx interlayer is 0.1 ~ 1nm, more preferably 0.5 ~ 1nm.Inventor is by experiment, it has been found that this thickness of interlayer is enough to suppress dislocation to continue to propagate, and can avoid again causing AlGaN or GaN growth failure modes owing to SiNx is blocked up simultaneously.Wherein the surface topography of AlGaN is not had obvious change by the growth of SiNx, and namely on SiNx, continued growth AlGaN and GaN is formed without discrete crystal structure.
In different examples, cushion comprises two or more AlGaN layer, and the chemical formula of each of which layer AlGaN is AlyGa1-yN, and in each layer, the value of y is 0.1 ~ 0.7.Al composition in every AlGaN layer is to be uniformly distributed, and the al composition between every layer is different.In example, in the AlGaN cushion comprising two or more, Al component is gradient, and most high Al contents, in the AlGaN layer near substrate layer side, successively reduces afterwards, makes Al component in the AlGaN layer of GaN layer side minimum.Above-mentioned AlGaN layer is all involuntary doping.
In different examples, each AlGaN layer is each formed with one or more SiNx interlayer (such as Fig. 1)；Or, only wherein part AlGaN layer is formed with one or more SiNx interlayer, and in other AlGaN layer in addition, there is no SiNx interlayer (such as Fig. 3).In addition, for any one SiNx interlayer, it is possible to be positioned among AlGaN layer, it is also possible between two adjacent AlGaN layer of different component (i.e. the interface of two-layer), or between adjacent AlGaN layer and GaN layer (i.e. the interface of two-layer, such as Fig. 2).Above-mentioned AlGaN layer, SiNx interlayer each exemplary construction, it is possible to be combined with each other according to practical situations.
As shown in Figure 1 or 2, hereafter illustrate for the semiconductor chip structure being preferably provided with two AlGaN layer.In example, Si substrate layer is of a size of 2 ~ 12 inches, and thickness is 300 ~ 1500 microns.The AlN thin film 101 formed on Si substrate layer 100, thickness is 100 ~ 300nm, is formed by metal organic vapor (MOCVD) method or the preparation of physical vapor deposition (PVD) method on Si substrate layer.First AlGaN layer 102 is formed on AlN thin film, and the second AlGaN layer 103 is formed in this first AlGaN layer 102, it is preferable that the thickness of each AlGaN layer is 200 ~ 5000nm；GaN layer is formed in this second AlGaN layer 103, it is preferred that thickness is 1 ~ 3 micron.
Being provided with two SiNx interlayers in preferred version, at least one of which SiNx interlayer preferably has the thickness of 0.1 ~ 1nm.SiNx interlayer is obtained by epitaxial growth in MOCVD device, reacts to grow described SiNx interlayer by importing silane and ammonia in the growth chamber of MOCVD device；The depositing temperature of SiNx interlayer is preferably 1000 ~ 1250 degrees Celsius.SiNx interlayer position is set, be respectively described by each following embodiment further.
First embodiment shown in Figure 1, is the AlGaN/GaN semiconductor chip structure adding SiNx interlayer in AlGaN layer.Wherein, in two AlGaN layer 102 and 103 on AlN thin film 101, each layer has chemical formula AlyGa1-yN, and the y in the first AlGaN layer 102 is y1, the y in the second AlGaN layer 103 is y2, wherein 0.1≤y2 < y1≤0.7.
Meanwhile, the numerical value of the first AlGaN layer 102 and the second AlGaN layer 103 respective thickness respectively d1 and d2, d1 and d2 is between 200 ~ 5000nm.Wherein, it is positive integer that SiNx interlayer 105 is formed in the first AlGaN layer 102 every d1/n1(wherein n1, and numerical value is be more than or equal to 2, less than or equal to 10) position of thickness；It is positive integer that SiNx interlayer 105 is also formed in the second AlGaN layer 103 every d2/n2(wherein n2, and numerical value is be more than or equal to 2, less than or equal to 10) position of thickness.The arbitrary value that x is 0.5 ~ 2 in each SiNx interlayer 105.
In Fig. 1, n1 and n2 is 2, and therefore the first AlGaN layer 102 centre position is formed with a SiNx interlayer 105, and the centre position of the second AlGaN layer 103 is formed with another SiNx interlayer 105.If n1(or n2) numerical value is more than 2, then the first AlGaN layer 102(or the second AlGaN layer 103) in every d1/n1(or d2/n2) time, namely, at the 1/n1 reaching thickness d 1,2/n1,3/n1 ... the position of (n1-1)/n1 (or reach 1/n2, the 2/n2 of thickness d 2,3/n2 ... the position of (n2-1)/n2), it is respectively formed with SiNx interlayer 105；Such as during n1=3, form two SiNx layer at the 1/3 of d1 thickness of the first AlGaN layer 102,2/3 place.Certainly, in other examples, it is possible to make SiNx interlayer quantity or spacing distance with other in AlGaN layer arrange.
Make the method for semiconductor chip structure described in first embodiment, comprise procedure below:
M1, employing PVD or MOCVD method form AlN thin film 101 on Si substrate layer 100；
M2, the Si substrate layer 100 of depositing Al N thin film 101 is transferred in mocvd growth chamber, adopt MOCVD method to prepare the first AlGaN layer 102, its chemical formula AlyGa1-yN, and y is y1.Wherein, comprise further:
M2-1, growth d1/n1 thickness the first AlGaN layer 102 after (wherein n1 numerical value is be more than or equal to 2 and less than or equal to 10), be switched to SiNx growth conditions, the SiNx interlayer (in SiNx interlayer, x is the arbitrary value of 0.5 ~ 2) of growth thickness 0.1 ~ 1nm；
M2-2, it is switched to the growth conditions of AlGaN, continued growth the first AlGaN layer 102；
M2-3, judge whether the integral thickness of the first AlGaN layer 102 reaches certain numerical value that setting value d1, setting value d1 are preferably between 200 ~ 5000nm；Thickness continues executing with step M3 after reaching setting value d1, thickness is not reaching to setting value d1 and then re-executes step M2-1.
M3, in the first AlGaN layer 102, prepare the second AlGaN layer 103, its chemical formula AlyGa1-yN and y is y2；Preferably continue to be prepared after adjustment growth conditions in same mocvd growth chamber.Wherein, comprise further:
M3-1, growth d2/n2 thickness the second AlGaN layer 103 after (wherein n2 numerical value is be more than or equal to 2 and less than or equal to 10), be switched to SiNx growth conditions, the SiNx interlayer (in SiNx interlayer, x is the arbitrary value of 0.5 ~ 2) of growth thickness 0.1 ~ 1nm；
M3-2, it is switched to the growth conditions of AlGaN, continued growth the second AlGaN layer 103；
M3-3, judge whether the integral thickness of the second AlGaN layer 103 reaches certain numerical value that setting value d2, setting value d2 are preferably between 200 ~ 5000nm；Thickness continues executing with step M4 after reaching setting value d2, thickness is not reaching to setting value d2 and then re-executes step M3-1.
M4, in the second AlGaN layer 103 continue epitaxial gan layers 104, it is preferred that thickness is 1 ~ 3 micron.
Second embodiment shown in Figure 2, is the AlGaN/GaN semiconductor chip structure adding SiNx interlayer between AlGaN layer and between AlGaN and GaN layer.In this example, 100 ~ 105 meanings represented are completely the same with first embodiment.It is distinctive in that with first embodiment, this example grows a SiNx interlayer between the first AlGaN layer 102 and second AlGaN layer 103 of different component, also between the second AlGaN layer 103 and GaN layer 104, grow another SiNx interlayer, namely a SiNx interlayer is between two adjacent AlGaN layer 102 and interfaces of 103, another SiNx interlayer is between the interface of AlGaN layer 103 and GaN layer 104, it should be noted that this another SiNx interlayer still falls within a part for AlGaN cushion.The thickness of each layer, component, growth conditions etc. in this example, can with reference to the description of first embodiment and each exemplary construction above.
Sketch the procedure below of semiconductor chip structure manufacture method described in the second embodiment:
N1, employing PVD or MOCVD method form AlN thin film 101 on Si substrate layer 100；
N2, the Si substrate layer 100 of depositing Al N thin film 101 is transferred in mocvd growth chamber, adopt MOCVD method to prepare the first AlGaN layer 102, its chemical formula AlyGa1-yN and y is y1；The thickness of the first AlGaN layer 102 is preferably 200 ~ 5000nm；
N3, being switched to SiNx growth conditions, in the first AlGaN layer 102, in first SiNx interlayer 105(SiNx interlayer of growth thickness 0.5 ~ 1nm, x is the arbitrary value of 0.5 ~ 2)；
N4, it is switched to AlGaN growth conditions, prepares the second AlGaN layer 103, its chemical formula AlyGa1-yN and y is y2, and the thickness of the second AlGaN layer 103 is preferably 200 ~ 5000nm；
N5, being switched to SiNx growth conditions, in the second AlGaN layer 103, in second SiNx interlayer 105(SiNx interlayer of growth thickness 0.5 ~ 1nm, x is the arbitrary value of 0.5 ~ 2)；
N6, on second SiNx interlayer 105 continue epitaxial gan layers 104, the preferred thickness of GaN layer 104 is 1 ~ 3 micron.
Each Rotating fields such as the AlN thin film of such as first embodiment or the second embodiment description, AlGaN layer, SiNx interlayer, GaN layer, may be by MOCVD growing method and are formed continuously on substrate.
The method in first embodiment and/or the second embodiment of being referred to is to form other fit structure of SiNx interlayer and AlGaN layer, such as shown in Fig. 3, the method only growing multiple SiNx interlayer 105 in the first AlGaN layer 102 can refer to described in step M2-1 ~ step M2-3, and growth afterwards does not have during the second AlGaN layer 103 of SiNx interlayer to can refer to step N4；Again such as shown in Fig. 4, growing a SiNx interlayer 105 and can refer to described in step M2-1 ~ step M2-3 in the first AlGaN layer 102, in the first AlGaN layer 102, another SiNx interlayer 105 of regrowth can refer to described in step N3；Other structures will not enumerate.
The manufacture method of semiconductor wafer in the embodiment of the present invention, including: by PVD or MOCVD mode, Si substrate layer forms AlN thin film；By MOCVD mode, on the Si substrate layer containing AlN thin film, form multiple AlGaN layer and at least one SiNx interlayer as AlGaN cushion；And, described AlGaN cushion is formed GaN layer；Wherein, the position of each SiNx interlayer, is any one in following position: be arranged in any one AlGaN layer, or between the interface of adjacent AlGaN layer, or between AlGaN layer and the interface of GaN layer.
Specifically, when practical application, formed in the process of AlGaN cushion and include multiple implementation when growing SiNx interlayer, in an AlGaN layer, such as form one or more SiNx interlayer, or form SiNx interlayer in the interface of an AlGaN layer AlGaN layer adjacent with other, or form SiNx interlayer an AlGaN layer with the interface of adjacent GaN layer.
In sum, the present invention by introducing the SiNx interlayer that such as thickness is 0.1 ~ 1nm in AlGaN layer, it is suppressed that the dislocation propagation in AlN thin film on Si substrate layer, thus improve the crystal mass of Si base GaN.Adopt the Si base GaN semiconductor wafer of the present invention, it is possible to be widely used in opto-electronic device and microelectronic component.
Although present disclosure has been made to be discussed in detail already by above preferred embodiment, but it should be appreciated that the description above is not considered as limitation of the present invention.After those skilled in the art have read foregoing, multiple amendment and replacement for the present invention all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (15)
1. a semiconductor wafer, it is characterised in that including:
Si substrate layer, this Si substrate layer is formed with AlN thin film；
Containing the AlGaN cushion of one or more SiNx interlayers, described AlGaN cushion is formed on described AlN thin film；The arbitrary value that numerical value is 0.5 ~ 2 of x in described SiNx interlayer；
GaN layer, it is formed on described AlGaN cushion.
2. semiconductor wafer as claimed in claim 1, it is characterised in that
Described AlGaN cushion comprises two or more AlGaN layer, and the chemical formula of each of which AlGaN layer is AlyGa1-yN, the y value in different AlGaN layer is in different size, and the value of y is 0.1 ~ 0.7.
3. semiconductor wafer as claimed in claim 2, it is characterised in that
Described AlGaN cushion is al composition gradient, and in this AlGaN cushion, in the AlGaN layer of Si substrate layer side, al composition is the highest, and in the AlGaN layer of GaN layer side, al composition is minimum.
4. semiconductor wafer as claimed in claim 2, it is characterised in that
Each AlGaN layer of described AlGaN cushion is each formed with one or more described SiNx interlayer；
Or, the part AlGaN layer in described AlGaN cushion is formed one or more described SiNx interlayer, other AlGaN layer in this AlGaN cushion does not have SiNx interlayer simultaneously.
5. the semiconductor wafer as described in claim 2 or 4, it is characterised in that
Said two or two or more AlGaN layer are involuntary doping.
6. semiconductor wafer as claimed in claim 2, it is characterised in that
N-1 described SiNx interlayer is formed in same AlGaN layer, and described AlGaN layer is divided into n the part that thickness is equal, and n is positive integer, be more than or equal to 2 and less than or equal to 10.
7. semiconductor wafer as claimed in claim 2, it is characterised in that
Has at least a SiNx interlayer between the interface of two adjacent AlGaN layer；Or, between AlGaN layer and the interface of described GaN layer of one of them SiNx interlayer the top in described AlGaN cushion.
8. the semiconductor wafer as described in any one in claim 1 ~ 7, it is characterised in that
The thickness of at least one SiNx interlayer is 0.1 ~ 1nm.
9. the manufacture method of a semiconductor wafer, it is characterised in that:
By PVD or MOCVD mode, Si substrate layer forms AlN thin film；
By MOCVD mode, on the Si substrate layer containing AlN thin film, form multiple AlGaN layer and at least one SiNx interlayer as AlGaN cushion, the arbitrary value that numerical value is 0.5 ~ 2 of x in described SiNx interlayer；And, described AlGaN cushion is formed GaN layer；
Wherein, the position of each SiNx interlayer, is any one in following position: be arranged in any one AlGaN layer, or between the interface of adjacent AlGaN layer, or between AlGaN layer and the interface of GaN layer.
10. the manufacture method of semiconductor wafer as claimed in claim 9, it is characterised in that the process forming AlGaN cushion includes:
A described AlGaN layer is formed one or more SiNx interlayer,
The step of the one or more SiNx interlayer of this formation comprises procedure below:
A1, growth d/n thickness AlGaN layer after, grow SiNx interlayer；Wherein, n numerical value is be more than or equal to 2 and less than or equal to 10；
After a2, described SiNx sandwich growth reach setting thickness, continued growth AlGaN layer；
If the integral thickness of a3 AlGaN layer reaches setting value d, this AlGaN layer grows another AlGaN layer or growth GaN layer；If the integral thickness of AlGaN layer is not reaching to setting value d, perform step a1.
11. the manufacture method of semiconductor wafer as claimed in claim 9, it is characterised in that the process forming AlGaN cushion includes:
SiNx interlayer is formed in the interface of an AlGaN layer AlGaN layer adjacent with other or with the interface of adjacent GaN layer
The step of this formation SiNx interlayer comprises procedure below:
B1, growth AlGaN layer grow SiNx interlayer after reaching the setting value d of thickness；
After b2, described SiNx sandwich growth reach setting thickness, grow another AlGaN layer or growth GaN layer.
12. the manufacture method of semiconductor wafer as claimed in claim 9, it is characterised in that
Described SiNx interlayer epitaxial growth in MOCVD device, the depositing temperature of SiNx interlayer is 1000 ~ 1250 degrees Celsius.
13. the manufacture method of semiconductor wafer as claimed in claim 12, it is characterised in that SiNx interlayer epitaxially grown process in MOCVD device includes:
By in the growth chamber of MOCVD device, import silane and ammonia that volume ratio is 1:20 to 1:300 to grow described SiNx interlayer；Wherein, silane diluted in hydrogen is to 200ppm.
14. the manufacture method of semiconductor wafer as claimed in claim 9, it is characterised in that
Each described AlGaN layer has chemical formula AlyGa1-yN, and in each AlGaN layer, the numerical value of y is 0.1 ~ 0.7；Adjacent AlGaN layer has different al compositions.
15. the manufacture method of semiconductor wafer as claimed in claim 9, it is characterised in that
The thickness of at least one described SiNx interlayer is 0.1 ~ 1nm.
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| CN108461589A (en) * | 2018-03-27 | 2018-08-28 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN108598234A (en) * | 2018-04-26 | 2018-09-28 | 吉林大学 | In a kind of reduction SiC substrate in GaN film tensile stress epitaxial structure and preparation method thereof |
| CN109599462A (en) * | 2018-11-30 | 2019-04-09 | 中国科学院半导体研究所 | The In ingredient enriched nitride material growing method of N polar surface based on Si substrate |
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| US20130270575A1 (en) * | 2010-11-15 | 2013-10-17 | Colin Humphreys | Semiconductor wafer comprising gallium nitride layer having one or more silicon nitride interlayer therein |
| CN103165434A (en) * | 2013-01-28 | 2013-06-19 | 华中科技大学 | Method using H2 corrosion and SiNx burying to improve quality of AlGaN material |
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| CN106601883A (en) * | 2016-11-26 | 2017-04-26 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method |
| CN108461589A (en) * | 2018-03-27 | 2018-08-28 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN108598234A (en) * | 2018-04-26 | 2018-09-28 | 吉林大学 | In a kind of reduction SiC substrate in GaN film tensile stress epitaxial structure and preparation method thereof |
| CN109599462A (en) * | 2018-11-30 | 2019-04-09 | 中国科学院半导体研究所 | The In ingredient enriched nitride material growing method of N polar surface based on Si substrate |
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