CN106384709A - GaN thin film material and preparation method thereof - Google Patents

GaN thin film material and preparation method thereof Download PDF

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Publication number
CN106384709A
CN106384709A CN201610846013.XA CN201610846013A CN106384709A CN 106384709 A CN106384709 A CN 106384709A CN 201610846013 A CN201610846013 A CN 201610846013A CN 106384709 A CN106384709 A CN 106384709A
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gan
layer
cushion
film material
discrete
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王文庆
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Dongguan Lianzhou Intellectual Property Operation and Management Co Ltd
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Dongguan Lianzhou Intellectual Property Operation and Management Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
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  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

The present invention relates to a third-generation wide bandgap semiconductor material preparation technology, in particular, a GaN thin film material and a preparation method thereof. The preparation method of the GaN thin film material includes the following steps that: a discrete buffer layer is grown through low-temperature discrete growth, growth temperature ranging from 400 to 600 DEG C; temperature is increased to 1000C to 1100 DEG C, and the discrete buffer layer is grown laterally, so that a GaN integrated layer can be formed, and the GaN integrated layer is annealed under an atmosphere of H2 and NH3, and finally a GaN thin film layer is grown. The discrete buffer layer and an integrated GaN thin film layer are stacked to form the GaN thin film material, wherein the integrated GaN thin film layer includes the GaN integrated layer and the GaN thin film layer, wherein the GaN thin film layer is grown on the GaN integrated layer. The GaN thin film material prepared by using the preparation method of the invention has the advantages of few lattice defects and excellent overall uniformity.

Description

A kind of GaN film material and preparation method thereof
Technical field：
The present invention relates to a kind of third generation semiconductor material with wide forbidden band technology of preparing, particularly to a kind of GaN film material And preparation method thereof.
Background technology
GaN belongs to third generation semiconductor material with wide forbidden band, and it has excellent physics and chemical property, such as energy gap Greatly, breakdown field strength is high, saturated electron drift velocity is big, thermal conductivity is high and anti-radiation performance is strong, thermal conductivity and dielectric constant Greatly, chemical characteristic is stable etc., is particularly suitable for making high pressure, high temperature, high frequency, high power, the quasiconductor using under strong radiation environment Device.
The Large-size crystal growth of GaN is extremely difficult, and GaN base material is all generally to be grown in foreign substrate.At present, The conventional substrate of grown on larger scale high-quality GaN thin-film material has on sapphire (c face) substrate, 6H-SiC substrate and Si substrate, Wherein on Si substrate, the epitaxial growth of GaN base material just grows up in recent years.Si substrate have low price, large scale, Be easily peeled, electrical conductivity and thermal conductivity higher the advantages of, and the processing technique of Si material and integrated technology are quite ripe, make Obtain the substrate GaN-based semiconductor device of Si and there are the potential advantages being easy to large-scale integrated.
When Sapphire Substrate etc. is used as base substrate heteroepitaxial growth, due to the crystalline substance of base substrate and GaN crystal Lattice constant mismatches, therefore, it is difficult to obtain the GaN crystal of high-quality by epitaxial growth, and contains more crystalline substance in GaN crystal Volume defect.The method that prior art has growth selection improves GaN crystalline quality, but, the GaN being obtained using growth selection method is brilliant There is this problem of skewness of dislocation density in body, and using in the operation being manufactured device by above-mentioned GaN material, be only capable of Whole GaN cannot be used using the specific part of GaN material, the usable range of therefore whole GaN material reduces.
Content of the invention
It is an object of the invention to provide a kind of GaN film material and preparation method thereof, this thin-film material lattice defect is few, with When thin film entirety uniformity good.
For achieving the above object, the present invention employs the following technical solutions：
A kind of preparation method of GaN film material, comprises the steps：
(1) low temperature is discrete grows discrete cushion, 400 DEG C～600 DEG C of growth temperature；
(2) heat up 1000 DEG C～1100 DEG C, make described discrete cushion cross growth be linked to be GaN one layer, then by institute State GaN one layer in H2、NH3Anneal under atmosphere, finally grow GaN film layer.
Alternatively, described discrete cushion adopts growth selection method to grow on a si substrate.
Preferably, to grow described discrete cushion step on a si substrate as follows for growth selection method：
(a) grown silicon nitride thin film on a silicon substrate；
B () etches the silicon nitride film on silicon substrate, silicon substrate is divided into some regions；
C () is in discrete 400 DEG C～600 DEG C grown buffer layers of each region low temperature；
(d)H2Annealing buffer layer under atmosphere, 1000 DEG C～1100 DEG C of annealing temperature.
Preferably, step (c) includes first growing AIN cushion in discrete each region growing cushion, and regrowth GaN delays Rush layer.
Preferably, growth GaN cushion makes annealing treatment repeated several times capable of circulation with to cushion.
Preferably, 1100 DEG C～1300 DEG C of GaN one layer temperature of annealing.
Preferably, the annealing process being related in growth course, time 2min～5min, pressure 50torr～100torr.
Preferably, growth GaN one layer makes annealing treatment repeated several times capable of circulation with to GaN one layer；
A kind of GaN film material, this thin-film material is made up of discrete cushion and overall GaN film layer stackup, overall GaN Thin layer includes GaN one layer and GaN film layer, and GaN film layer is grown on GaN one layer.
Preferably, discrete cushion includes two buffer layer：AlN cushion and GaN cushion, GaN buffer growth exists On AlN cushion.
Compared with prior art, the invention has the advantages that：The setting of cushion effectively alleviates lattice mismatch, delays Rush layer annealing can the dislocation defects that cause of preferably less lattice mismatch, discrete growth is conducive to discharging stress, discrete life Long cushion can provide good basis for growing superior in quality GaN material.Below by discrete to cross growth integration GaN Layer, makes GaN material entirety homogeneity higher, H2、NH3Anneal under atmosphere and reduce dislocation density further, improve thin-film material matter Amount.
Specific embodiment：
With reference to specific embodiment, the present invention is further detailed explanation：
In specific embodiment, trimethyl gallium (TMGa), ammonia (NH3), trimethyl aluminium (TMAl) and silane (SiH4) for reacting Source, nitrogen (N2) and hydrogen (H2) are carrier gas.
Embodiment 1
Before formal growth, clean silicon substrate, then NH3With SiH4Silicon nitride film is deposited at 950 DEG C；Selectivity dry method Etch nitride silicon thin film, silicon substrate is divided into some regions；Because on silicon nitride film, gallium nitride nucleation is more difficult, so discrete Each region in NH3At 450 DEG C, first grow 50nmAlN cushion with TMAl, AlN cushion can stop Ga from being combined with Si, make GaN preferably nucleation and crystallization, NH3Grow 50nm GaN cushion with TMGa again at 550 DEG C；It is warming up to 1050 DEG C, stop logical Source, H2Anneal under atmosphere 5min；
It is warming up to 1070 DEG C, TongYuan, GaN high temperature cross growth 30nm, stop TongYuan, be warming up to 1100 DEG C, pressure 100torr,H2、NH3Anneal under atmosphere 2min, H2The bad GaN of accelerated decomposition crystalline quality, NH3GaN recrystallization can be helped, Contribute to Ga, H after taking away decomposition in time2、NH3Under atmosphere, annealing makes crystalline quality more preferable；Intensification is back to 1070 DEG C, TongYuan, GaN high temperature cross growth 30nm, stops TongYuan, is warming up to 1100 DEG C, pressure 100torr, H2、NH3Anneal under atmosphere 3min；Rise Temperature is back to 1070 DEG C, TongYuan, GaN high temperature cross growth 30nm, stops TongYuan, is warming up to 1100 DEG C, pressure 100torr, H2、NH3 Under atmosphere, annealing 5min forms GaN one layer；Intensification is back to 1070 DEG C, TongYuan, grows 800nmGaN thin layer.
The present embodiment GaN material is made up of discrete cushion and overall GaN film layer stackup, and discrete cushion includes AlN Cushion and GaN cushion, on AlN cushion, overall GaN film layer includes GaN one layer and GaN to GaN buffer growth Thin layer, GaN film layer is grown on GaN one layer.
The present embodiment GaN material surfacing, defect concentration is 108cm-2The order of magnitude, GaN crystalline quality is preferable.
Embodiment 2
Before formal growth, clean silicon substrate, then NH3With SiH4Silicon nitride film is deposited at 950 DEG C；Selectivity dry method Etch nitride silicon thin film, silicon substrate is divided into some regions；Because on silicon nitride film, gallium nitride nucleation is more difficult, so discrete Each region in NH3Grow 30nm GaN cushion with TMGa at 550 DEG C；It is warming up to 1050 DEG C, stop TongYuan, H2Under atmosphere Annealing 5min；Intensification is back to 570 DEG C, TongYuan, grows 30nm GaN cushion；It is warming up to 1050 DEG C, stop TongYuan, H2Under atmosphere Annealing 5min；Intensification is back to 600 DEG C, TongYuan, grows 30nm GaN cushion；It is warming up to 1050 DEG C, stop TongYuan, H2Under atmosphere Annealing 5min；
It is warming up to 1100 DEG C, TongYuan, GaN high temperature cross growth 50nm, stop TongYuan, be warming up to 1200 DEG C, pressure 70torr,H2、NH3Anneal under atmosphere 4min；Intensification is back to 1100 DEG C, TongYuan, GaN high temperature cross growth 50nm, stops TongYuan, It is warming up to 1250 DEG C, pressure 70torr, H2、NH3Under atmosphere, annealing 5min forms GaN one layer；Intensification is back to 1100 DEG C, TongYuan, Growth 900nmGaN thin layer.
The present embodiment GaN material is made up of discrete cushion and overall GaN film layer stackup, and discrete cushion includes GaN Cushion, overall GaN film layer includes GaN one layer and GaN film layer, and GaN film layer is grown on GaN one layer.
The present embodiment GaN material surfacing, defect concentration is 108cm-2The order of magnitude, GaN crystalline quality is preferable.

Claims (10)

1. a kind of preparation method of GaN film material is it is characterised in that comprise the steps：
(1) low temperature is discrete grows discrete cushion, 400 DEG C～600 DEG C of growth temperature；
(2) heat up 1000 DEG C～1100 DEG C, make described discrete cushion cross growth be linked to be GaN one layer, then by described GaN One layer is in H2、NH3Anneal under atmosphere, finally grow GaN film layer.
2. the preparation method of GaN film material selects life it is characterised in that discrete cushion adopts according to claim 1 Regular way grows on a si substrate.
3. according to claim 2 GaN film material preparation method it is characterised in that growth selection method on a si substrate Grow described discrete cushion step as follows：
(a) grown silicon nitride thin film on a silicon substrate；
B () etches the silicon nitride film on silicon substrate, silicon substrate is divided into some regions；
C () is in discrete 400 DEG C～600 DEG C grown buffer layers of each region low temperature；
(d)H2Annealing buffer layer under atmosphere, 1000 DEG C～1100 DEG C of annealing temperature.
4. according to claim 3 GaN film material preparation method it is characterised in that：Step (c) is in discrete each region Grown buffer layer includes first growing AIN cushion, regrowth GaN cushion.
5. according to claim 3 GaN film material preparation method it is characterised in that：Grow GaN cushion and to buffering Layer makes annealing treatment repeated several times capable of circulation.
6. according to claim 1 GaN film material preparation method it is characterised in that：Annealing GaN one layer temperature 1100 DEG C～1300 DEG C.
7. according to claim 1 GaN film material preparation method it is characterised in that：Be related in growth course moves back Fiery process, time 2min～5min, pressure 50torr～100torr.
8. according to claim 1 or 6 GaN film material preparation method it is characterised in that：Growth GaN one layer with right GaN one layer makes annealing treatment repeated several times capable of circulation.
9. a kind of GaN film material it is characterised in that：This thin-film material is by discrete cushion and overall GaN film layer stackup structure Become, overall GaN film layer includes GaN one layer and GaN film layer, and GaN film layer is grown on GaN one layer.
10. according to claim 9 GaN film material it is characterised in that：Discrete cushion includes two buffer layer：AlN delays Rush layer and GaN cushion, GaN buffer growth is on AlN cushion.
CN201610846013.XA 2016-09-22 2016-09-22 GaN thin film material and preparation method thereof Withdrawn CN106384709A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107611014A (en) * 2017-09-01 2018-01-19 苏州云舒新材料科技有限公司 A kind of preparation method of GaN thermoelectric film materials

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1560900A (en) * 2004-03-05 2005-01-05 长春理工大学 Method of growing low dislocation gallium nitride on silicon substrate
CN202616233U (en) * 2012-05-15 2012-12-19 深圳信息职业技术学院 A tensile strain germanium thin film epitaxy structure
CN103247724A (en) * 2012-02-08 2013-08-14 郭磊 Semiconductor structure and forming method thereof
CN104362080A (en) * 2014-09-24 2015-02-18 南昌大学 Method for growing GaN-base thin film materials on Si substrate selectively

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1560900A (en) * 2004-03-05 2005-01-05 长春理工大学 Method of growing low dislocation gallium nitride on silicon substrate
CN103247724A (en) * 2012-02-08 2013-08-14 郭磊 Semiconductor structure and forming method thereof
CN202616233U (en) * 2012-05-15 2012-12-19 深圳信息职业技术学院 A tensile strain germanium thin film epitaxy structure
CN104362080A (en) * 2014-09-24 2015-02-18 南昌大学 Method for growing GaN-base thin film materials on Si substrate selectively

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107611014A (en) * 2017-09-01 2018-01-19 苏州云舒新材料科技有限公司 A kind of preparation method of GaN thermoelectric film materials

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Application publication date: 20170208