CN113089091A - Boron nitride template and preparation method thereof - Google Patents

Boron nitride template and preparation method thereof Download PDF

Info

Publication number
CN113089091A
CN113089091A CN202110356419.0A CN202110356419A CN113089091A CN 113089091 A CN113089091 A CN 113089091A CN 202110356419 A CN202110356419 A CN 202110356419A CN 113089091 A CN113089091 A CN 113089091A
Authority
CN
China
Prior art keywords
boron nitride
buffer layer
reaction chamber
temperature
template
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110356419.0A
Other languages
Chinese (zh)
Inventor
张纪才
谭庶欣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing University of Chemical Technology
Original Assignee
Beijing University of Chemical Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing University of Chemical Technology filed Critical Beijing University of Chemical Technology
Priority to CN202110356419.0A priority Critical patent/CN113089091A/en
Publication of CN113089091A publication Critical patent/CN113089091A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention discloses a boron nitride template and a preparation method thereof. The preparation method of the boron nitride template comprises the following steps: firstly, growing a boron nitride buffer layer on a foreign substrate, and then growing a hexagonal boron nitride layer on the boron nitride buffer layer. According to the preparation method of the boron nitride template provided by the embodiment of the invention, the high-temperature BN buffer layer formed by high-temperature deposition can effectively eliminate the lattice constant mismatch between the substrate and the boron nitride template, so that defects are reduced, series problems caused by mismatch stress are relieved, and the quality and the integrity of the boron nitride template are improved.

Description

Boron nitride template and preparation method thereof
Technical Field
The invention particularly relates to a boron nitride template and a preparation method thereof, belonging to the technical field of semiconductors.
Background
Hexagonal boron nitride (h-BN) exhibits excellent physicochemical properties in many respects, including corrosion resistance, chemical stability, high thermal conductivity, and the like. The wide band gap semiconductor material has a forbidden band width of about 6eV, and is an excellent deep ultraviolet light emitting material. Compared with AlN material, the p-type doping is easier to realizeIs expected to be widely applied to deep ultraviolet light emitting devices, overcomes a series of existing problems in deep ultraviolet light emission, replaces the existing mercury lamp, and realizes the environment-friendly and energy-saving deep ultraviolet light source. BN also has unique advantages in semiconductor solid-state neutron detectors, such as10B has a large neutron capture cross section, so h-BN is an ideal solid-state neutron detector material.
h-BN generally grows on substrates with similar crystal lattices such as sapphire, graphene, silicon carbide and the like, however, the epitaxial growth material on the heterogeneous substrate has the characteristics of high defect density, large stress and the like in the epitaxial material due to lattice mismatch, thermal mismatch and the like, and meanwhile, the preparation cost of the material is difficult to reduce.
Currently, main methods for producing hexagonal boron nitride include Metal Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), Molecular Beam Epitaxy (MBE), and the like. Although the hydride vapor phase epitaxy method has a high growth rate, it is not easy to precisely control the thickness of the product. The molecular beam epitaxy method can accurately control the thickness, but the growth speed is extremely slow, so that the molecular beam epitaxy method is not suitable for thick film growth. At present, most of the widely used organometallic chemical vapor deposition methods only grow h-BN with the thickness of nanometer, the thickest film reaches the micron level, but the deposition time is still longer. In short, no matter which method is adopted to prepare BN, a series of technical problems are faced.
Disclosure of Invention
The invention mainly aims to provide a boron nitride template and a preparation method thereof, thereby overcoming the defects in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a preparation method of a boron nitride template, which comprises the following steps: firstly, growing a boron nitride buffer layer on a foreign substrate, and then growing a hexagonal boron nitride layer on the boron nitride buffer layer.
The embodiment of the invention also provides the boron nitride template prepared by the preparation method.
Compared with the prior art, the invention has the advantages that: according to the preparation method of the boron nitride template provided by the embodiment of the invention, the high-temperature BN buffer layer formed by high-temperature deposition can effectively eliminate the lattice constant mismatch between the substrate and the boron nitride template, so that defects are reduced, series problems caused by mismatch stress are relieved, and the quality and the integrity of the boron nitride template are improved.
Drawings
FIG. 1 is a cross-sectional SEM image of a boron nitride template provided in an exemplary embodiment of the present invention;
FIG. 2 is an XRD diffractogram of a boron nitride template provided in an exemplary embodiment of the present invention;
FIG. 3 is a Raman representation of a boron nitride template provided in an exemplary embodiment of the present invention;
FIG. 4 is a cross-sectional SEM photograph of the sapphire/low temperature BN buffer layer/h-BN template in comparative example 1;
FIG. 5 is an XRD diffraction pattern of the sapphire/high temperature BN buffer layer/h-BN template in comparative example 1.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
The embodiment of the invention provides a preparation method of a boron nitride template, when BN is prepared by heteroepitaxy, a high-temperature buffer layer is formed by growing a BN buffer layer on a heterosubstrate at a high temperature, then h-BN epitaxial growth is carried out on the high-temperature buffer layer by further changing and optimizing growth conditions, and the h-BN is prepared by adopting the high-temperature buffer layer, so that the fundamental characteristic of high temperature required by the BN epitaxial growth can be aimed at, and further, the series of problems caused by epitaxial mismatch are effectively solved.
The embodiment of the invention provides a preparation method of a boron nitride template, which comprises the following steps: firstly, growing a boron nitride buffer layer on a foreign substrate, and then growing a hexagonal boron nitride layer on the boron nitride buffer layer.
Further, the preparation method also comprises the following steps: and placing the heterogeneous substrate into a reaction chamber, injecting nitrogen and/or hydrogen into the reaction chamber, heating the reaction chamber to 1200-1500 ℃, then introducing hydrogen to clean the heterogeneous substrate for 5-20min, and then sequentially growing a boron nitride buffer layer and a hexagonal boron nitride layer on the heterogeneous substrate.
Further, the preparation method specifically comprises the following steps: and placing the heterogeneous substrate into a reaction chamber, controlling the temperature in the reaction chamber to be 1200-1500 ℃ and the pressure in the reaction chamber to be 10-300Torr, and simultaneously introducing a nitrogen source and a boron source into the reaction chamber, so that the flow of the nitrogen source is 10-5000sccm and the flow of the boron source is 0.05-10sccm, thereby growing and forming the boron nitride buffer layer.
Further, the preparation method specifically comprises the following steps: after a boron nitride buffer layer is grown and formed on the heterogeneous substrate, the temperature in the reaction chamber is adjusted to 1350-.
Further, the preparation method also comprises the following steps: and controlling the growth speed of the hexagonal boron nitride layer to be 4-10 mu m/h.
Further, the preparation method also comprises the following steps: and growing the boron nitride buffer layer and the hexagonal boron nitride layer by adopting a CVD (chemical vapor deposition) or HVPE (high voltage vapor deposition) method.
Further, the thickness of the boron nitride buffer layer is 200nm-1 μm.
Further, the thickness of the hexagonal boron nitride layer is 2-10 μm.
Further, the foreign substrate includes a sapphire or SiC substrate.
The embodiment of the invention also provides the boron nitride template prepared by the preparation method.
As will be described in further detail with reference to the drawings and the specific embodiments, unless otherwise specified, the CVD (chemical vapor deposition) HVPE (hydride vapor phase epitaxy) process, the corresponding equipment, and the like, and the testing method in the embodiments of the present invention may be those known to those skilled in the art.
Example 1
A preparation method of a boron nitride template specifically comprises the following steps:
1) putting a heterogeneous substrate (such as a sapphire substrate or a SiC substrate) into a CVD or HVPE reaction chamber, introducing nitrogen and/or hydrogen into the reaction chamber, and heating the temperature of the reaction chamber to 1200 ℃ to reach the growth temperature for growing a BN buffer layer;
2) introducing hydrogen into the reaction chamber at 1200 ℃ to clean the heterogeneous substrate, wherein the cleaning time is 5-20 minutes;
3) simultaneously introducing a nitrogen source and a boron source into the reaction chamber at 1200 ℃, so that the introduction flow of the nitrogen source is 10-5000sccm, the introduction flow of the boron source is 0.05-10sccm, the growth pressure of the reaction chamber is controlled to be 10-300Torr, and a high-temperature BN buffer layer with the thickness of 200nm-1 mu m is grown;
4) after the thickness of the high-temperature BN buffer layer meets the requirement, changing the growth condition, increasing the growth temperature in the reaction chamber to 1350 ℃ and adjusting the pressure to 10-100Torr to ensure that the introduction flow of a nitrogen source is 10-1000sccm and the introduction flow of a boron source is 0.05-50sccm, and growing a hexagonal boron nitride template with the thickness of 2-10 mu m on the high-temperature BN buffer layer in situ, wherein the growth rate of the hexagonal boron nitride template is 0.1-20 mu m/h; finally obtaining the sapphire/high-temperature BN buffer layer/h-BN template.
The sectional SEM image of the sapphire/high temperature BN buffer layer/h-BN template obtained in example 1 is shown in fig. 1, and the obtained sapphire/high temperature BN buffer layer/h-BN template was tested, the obtained XRD diffractogram is shown in fig. 2, and the Raman characterization chart is shown in fig. 3.
Example 2
A preparation method of a boron nitride template specifically comprises the following steps:
1) putting the sapphire substrate into a CVD or HVPE reaction chamber, introducing nitrogen and/or hydrogen into the reaction chamber, and heating the reaction chamber to 1400 ℃;
2) introducing hydrogen into the reaction chamber at 1400 ℃ to clean the heterogeneous substrate, wherein the cleaning time is 5-20 minutes;
3) introducing ammonia gas at 1400 ℃, ensuring the introduction flow rate of the ammonia gas to be 10-5000sccm, carrying out nitridation treatment on the sapphire substrate for 1-20 minutes, then introducing a nitrogen source and a boron source into the reaction chamber, ensuring the introduction flow rate of the nitrogen source to be 10-5000sccm and the flow rate of the boron source to be 0.05-10sccm, controlling the growth pressure of the reaction chamber to be 10-300Torr, and growing a high-temperature BN buffer layer with the thickness of 200nm-1 mu m;
4) after the thickness of the high-temperature BN buffer layer meets the requirement, changing the growth condition, increasing the growth temperature in the reaction chamber to 1550 ℃, adjusting the pressure to 10-100Torr, leading the introduction flow of a nitrogen source to be 10-1000sccm and the introduction flow of a boron source to be 0.05-50sccm, and growing a hexagonal boron nitride template with the thickness of 2-10 mu m on the high-temperature BN buffer layer in situ, wherein the growth rate of the hexagonal boron nitride template is 0.1-20 mu m/h; finally obtaining the sapphire/high-temperature BN buffer layer/h-BN template.
The obtained sapphire/high-temperature BN buffer layer/h-BN template is tested, and the obtained XRD diffraction result and the Raman characterization structure are basically consistent with those of the embodiment 1.
Example 3
A preparation method of a boron nitride template specifically comprises the following steps:
1) putting a heterogeneous substrate (such as a sapphire substrate or a SiC substrate) into a CVD or HVPE reaction chamber, introducing nitrogen and/or hydrogen into the reaction chamber, and heating the temperature of the reaction chamber to 1500 ℃ to reach the growth temperature of a BN buffer layer;
2) introducing hydrogen into the reaction chamber at 1500 ℃ to clean the heterogeneous substrate for 5-20 minutes;
3) simultaneously introducing a nitrogen source and a boron source into the reaction chamber at 1500 ℃, wherein the introduction flow rate of the nitrogen source is 10-5000sccm, the introduction flow rate of the boron source is 0.05-10sccm, the growth pressure of the reaction chamber is controlled to be 10-300Torr, and a high-temperature BN buffer layer with the thickness of 200nm-1 mu m is grown;
4) after the thickness of the high-temperature BN buffer layer meets the requirement, changing the growth condition, increasing the growth temperature in the reaction chamber to 1600 ℃, adjusting the pressure to 10-100Torr, leading the introduction flow of a nitrogen source to be 10-1000sccm and the introduction flow of a boron source to be 0.05-50sccm, and growing a hexagonal boron nitride template with the thickness of 2-10 mu m on the high-temperature BN buffer layer in situ, wherein the growth rate of the hexagonal boron nitride template is 0.1-20 mu m/h; finally obtaining the sapphire/high-temperature BN buffer layer/h-BN template.
The obtained sapphire/high-temperature BN buffer layer/h-BN template is tested, and the obtained XRD diffraction result and the Raman characterization structure are basically consistent with those of the embodiment 1.
Comparative example 1
1) Putting a heterogeneous substrate (such as a sapphire substrate or a SiC substrate) into a CVD or HVPE reaction chamber, introducing nitrogen and/or hydrogen into the reaction chamber, and heating the temperature of the reaction chamber to 1000-1200 ℃;
2) introducing hydrogen into the reaction chamber to clean the heterogeneous substrate at the temperature of 1000-;
3) reducing the temperature of the reaction chamber to 800 ℃ and introducing a nitrogen source and a boron source into the reaction chamber at the same time, wherein the flow rate of the nitrogen source is 10-5000sccm, the flow rate of the boron source is 0.05-10sccm, the pressure is 10-300Torr, and a low-temperature BN buffer layer with the thickness of 200nm-1 mu m is grown;
4) after the thickness of the high-temperature BN buffer layer meets the requirement, changing the growth condition, increasing the growth temperature by 1350-; finally obtaining the sapphire/low-temperature BN buffer layer/h-BN template material.
The sectional SEM image of the sapphire/low temperature BN buffer layer/h-BN template obtained in comparative example 1 is shown in fig. 4, and the XRD diffractogram obtained by testing the sapphire/low temperature BN buffer layer/h-BN template is shown in fig. 5.
The test results of the h-BN template obtained by the embodiment and the comparative example show that the high-temperature BN buffer layer formed by high-temperature deposition can effectively eliminate the lattice constant mismatch between the substrate and the boron nitride template, thereby reducing defects and relieving series problems caused by mismatch stress, and further improving the quality and the integrity of the boron nitride template.
According to the preparation method of the boron nitride template provided by the embodiment of the invention, the high-temperature BN buffer layer formed by high-temperature deposition can effectively eliminate the lattice constant mismatch between the substrate and the boron nitride template, so that defects are reduced, series problems caused by mismatch stress are relieved, and the quality and the integrity of the boron nitride template are improved.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.

Claims (10)

1. A method for preparing a boron nitride template is characterized by comprising the following steps: firstly, growing a boron nitride buffer layer on a foreign substrate, and then growing a hexagonal boron nitride layer on the boron nitride buffer layer.
2. The method of claim 1, further comprising: and placing the heterogeneous substrate into a reaction chamber, injecting nitrogen and/or hydrogen into the reaction chamber, heating the reaction chamber to 1200-1500 ℃, then introducing hydrogen to clean the heterogeneous substrate for 5-20min, and then sequentially growing a boron nitride buffer layer and a hexagonal boron nitride layer on the heterogeneous substrate.
3. The method according to claim 1, comprising: and placing the heterogeneous substrate into a reaction chamber, controlling the temperature in the reaction chamber to be 1200-1500 ℃ and the pressure in the reaction chamber to be 10-300Torr, and simultaneously introducing a nitrogen source and a boron source into the reaction chamber, so that the flow of the nitrogen source is 10-5000sccm and the flow of the boron source is 0.05-10sccm, thereby growing and forming the boron nitride buffer layer.
4. The method according to claim 1 or 3, characterized in that it comprises in particular: after a boron nitride buffer layer is grown and formed on the heterogeneous substrate, the temperature in the reaction chamber is adjusted to 1350-.
5. The method of claim 4, further comprising: and controlling the growth speed of the hexagonal boron nitride layer to be 0.1-20 mu m/h.
6. The method of claim 1, further comprising: and growing the boron nitride buffer layer and the hexagonal boron nitride layer by adopting a CVD (chemical vapor deposition) or HVPE (high voltage vapor deposition) method.
7. The method of claim 1, wherein: the thickness of the boron nitride buffer layer is 200nm-1 μm.
8. The method of claim 1, wherein: the thickness of the hexagonal boron nitride layer is 1-10 μm.
9. The method of claim 1, wherein: the foreign substrate comprises a sapphire or SiC substrate.
10. A boron nitride template produced by the production method according to any one of claims 1 to 9.
CN202110356419.0A 2021-04-01 2021-04-01 Boron nitride template and preparation method thereof Pending CN113089091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110356419.0A CN113089091A (en) 2021-04-01 2021-04-01 Boron nitride template and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110356419.0A CN113089091A (en) 2021-04-01 2021-04-01 Boron nitride template and preparation method thereof

Publications (1)

Publication Number Publication Date
CN113089091A true CN113089091A (en) 2021-07-09

Family

ID=76672597

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110356419.0A Pending CN113089091A (en) 2021-04-01 2021-04-01 Boron nitride template and preparation method thereof

Country Status (1)

Country Link
CN (1) CN113089091A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114019561A (en) * 2021-11-08 2022-02-08 中国原子能科学研究院 Neutron detector and detection system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103541000A (en) * 2013-11-06 2014-01-29 中国科学院苏州纳米技术与纳米仿生研究所 Device and method for preparing boron nitride single crystal
KR20170088037A (en) * 2016-01-22 2017-08-01 울산과학기술원 Preparing method of multi-layer hexagonal boron nitride nanostructure on sapphire substrate
CN111243942A (en) * 2020-01-19 2020-06-05 吉林大学 Method for improving crystallization quality of hexagonal boron nitride by using transition metal or alloy as buffer layer
CN111477534A (en) * 2019-01-23 2020-07-31 北京化工大学 Aluminum nitride template and preparation method thereof
CN111710752A (en) * 2020-06-24 2020-09-25 吉林大学 MSM type deep ultraviolet photoelectric detector based on cubic boron nitride thick film and preparation method
CN111986987A (en) * 2020-09-02 2020-11-24 西安电子科技大学 P-type doping-based hexagonal boron nitride epitaxial film preparation method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103541000A (en) * 2013-11-06 2014-01-29 中国科学院苏州纳米技术与纳米仿生研究所 Device and method for preparing boron nitride single crystal
KR20170088037A (en) * 2016-01-22 2017-08-01 울산과학기술원 Preparing method of multi-layer hexagonal boron nitride nanostructure on sapphire substrate
CN111477534A (en) * 2019-01-23 2020-07-31 北京化工大学 Aluminum nitride template and preparation method thereof
CN111243942A (en) * 2020-01-19 2020-06-05 吉林大学 Method for improving crystallization quality of hexagonal boron nitride by using transition metal or alloy as buffer layer
CN111710752A (en) * 2020-06-24 2020-09-25 吉林大学 MSM type deep ultraviolet photoelectric detector based on cubic boron nitride thick film and preparation method
CN111986987A (en) * 2020-09-02 2020-11-24 西安电子科技大学 P-type doping-based hexagonal boron nitride epitaxial film preparation method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DABROWSKA AK，ET AL.: "Two stage epitaxial growth of wafer-size multilayer h-BN by metal-organic vapor phase epitaxy - a homoepitaxial approach", 《2D MATERIALS》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114019561A (en) * 2021-11-08 2022-02-08 中国原子能科学研究院 Neutron detector and detection system
CN114019561B (en) * 2021-11-08 2024-09-06 中国原子能科学研究院 Neutron detector and detection system

Similar Documents

Publication Publication Date Title
CN111029246B (en) Method for reducing triangular defects in SiC epitaxial layer
WO2018108005A1 (en) Method for reducing impact of basal plane dislocation on silicon carbide epitaxial layer
CN111725072B (en) High-quality gallium oxide film with stable electron concentration and preparation method thereof
CN104409319A (en) Preparation method for growing high-quality GaN buffer layer on graphene substrate
EP1888821A1 (en) Low basal plane dislocation bulk grown sic wafers
CN105140102B (en) A kind of method of the beta-silicon carbide thin film of epitaxial growth on a silicon substrate of optimization
JP2007230823A (en) Method for manufacturing silicon carbide single crystal ingot, and silicon carbide single crystal ingot
CN108428618B (en) Gallium nitride growth method based on graphene insertion layer structure
CN112242459B (en) AlGaN film with in-situ SiN dislocation annihilation layer and epitaxial growth method thereof
CN111477534B (en) Aluminum nitride template and preparation method thereof
CN108511322B (en) Method for preparing GaN film on two-dimensional graphite substrate
CN106169497B (en) Silicon carbide substrate and method for producing silicon carbide substrate
CN113089091A (en) Boron nitride template and preparation method thereof
CN105006427B (en) A kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer
CN111501102A (en) HVPE-based self-supporting gallium nitride single crystal and preparation method thereof
JP2006253617A (en) SiC SEMICONDUCTOR AND ITS MANUFACTURING METHOD
JP4283478B2 (en) Method for growing SiC single crystal on electronic device substrate
JP2006222402A (en) Gallium nitride system compound semiconductor and method for manufacturing the same
KR20240101577A (en) Manufacturing method of heteroepitaxial wafer
CN108242385B (en) Method for growing gallium nitride, gallium nitride epitaxial structure and semiconductor device
CN106399967B (en) A kind of preparation method of SiC thin-film material
CN111415858A (en) Preparation method and application of AlN or AlGaN thin film material
CN113053735B (en) BxAlyGa(1-x-y)N self-supporting single crystal substrate and preparation method thereof
CN114438595B (en) Gallium nitride epitaxial growth method beneficial to improving heat dissipation
JP4353369B2 (en) SiC semiconductor and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20210709

RJ01 Rejection of invention patent application after publication