CN111243942A - Method for improving crystallization quality of hexagonal boron nitride by using transition metal or alloy as buffer layer - Google Patents

Method for improving crystallization quality of hexagonal boron nitride by using transition metal or alloy as buffer layer Download PDF

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CN111243942A
CN111243942A CN202010060273.0A CN202010060273A CN111243942A CN 111243942 A CN111243942 A CN 111243942A CN 202010060273 A CN202010060273 A CN 202010060273A CN 111243942 A CN111243942 A CN 111243942A
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buffer layer
transition metal
alloy
boron nitride
hexagonal boron
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陈占国
栾凯然
陈曦
张文博
刘秀环
赵纪红
侯丽新
高延军
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Jilin University
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Abstract

A method for improving the crystallization quality of hexagonal boron nitride by using transition metal or alloy as a buffer layer belongs to the technical field of semiconductor material epitaxial growth. Before growing the hexagonal boron nitride epitaxial film, depositing transition metal or alloy on a silicon, sapphire or other substrate with larger lattice mismatch as a buffer layer in advance by using magnetron sputtering, electron beam evaporation, pulse laser deposition or thermal evaporation film preparation technology, and then epitaxially growing the hexagonal boron nitride film on the substrate with the buffer layer by adopting chemical vapor deposition, magnetron sputtering or pulse laser deposition technology; the buffer layer is annealed before the hexagonal boron nitride film is epitaxially grown so as to further improve the quality of the buffer layer, thereby achieving the purpose of further improving the crystallization quality of the hBN film. The buffer layer is made of transition metal alloy material formed by transition metal such as Cu, Cr, Mo, Ni, W, Mn, Co and the like or combination thereof.

Description

Method for improving crystallization quality of hexagonal boron nitride by using transition metal or alloy as buffer layer
Technical Field
The invention belongs to the technical field of epitaxial growth of semiconductor materials, and particularly relates to a method for improving the crystallization quality of hexagonal boron nitride by using transition metal or alloy as a buffer layer.
Background
Hexagonal boron nitride (hBN) is a group iii-V wide bandgap semiconductor material with a bandgap width of about 6 eV. Due to its many excellent physical and chemical properties, such as high temperature resistance, low expansion coefficient, extremely high dielectric strength, high thermal conductivity and high chemical stability, it has potential applications in deep ultraviolet light electronics and high power electronics. Due to the shortage of hBN substrate materials, most hBN thin film materials are prepared by heteroepitaxy on foreign substrates, which mainly include silicon, sapphire and transition metal foils. Silicon and sapphire materials are substrate materials commonly used for manufacturing MOS (metal oxide semiconductor) devices, LED (light emitting diode) devices and the like in the semiconductor industry, and heteroepitaxy hBN film on the silicon and sapphire substrates can realize the hybrid integration of electronic devices and photoelectric devices with different functions. However, because of the large lattice mismatch between the silicon and sapphire and hBN, the hBN film epitaxially grown using these two materials as the substrate material has large stress, which causes the degradation of hBN quality. Transition metals (such as Cu, Ni, Cr, Ru, Pt and the like) generally have small lattice constants and small lattice mismatch rate with hBN, when a transition metal foil is used as a substrate material, the transition metal foil is extremely thin and cannot ensure the surface flatness, so that hBN films grown on the foil have certain bending, folding, cracking and the like, the crystallization quality of the hBN films is reduced due to internal stress or cracks, the growth of the hBN films with large area and high quality is difficult to realize, and the device performance based on the hBN films is influenced.
Disclosure of Invention
In order to improve the crystallization quality of the heteroepitaxial hBN film, reduce the internal stress of the hBN epitaxial film and improve the flatness of the film, the invention provides a method for improving the crystallization quality of hexagonal boron nitride by using transition metal or alloy as a buffer layer. The method can not only improve the crystallinity of the hBN on the large lattice mismatch substrate, but also reduce the internal stress of the epitaxial film and improve the flatness of the hBN film. The method can also be extended to the epitaxial growth process of other III-V semiconductor materials.
The technical scheme adopted by the invention for solving the technical problems is as follows: before growing the hexagonal boron nitride epitaxial film, depositing a transition metal or alloy on a silicon, sapphire or other substrate with larger lattice mismatch as a buffer layer in advance by using magnetron sputtering, electron beam evaporation, pulse laser deposition or thermal evaporation film preparation technology, and then epitaxially growing the hexagonal boron nitride film on the substrate with the buffer layer by adopting chemical vapor deposition, magnetron sputtering or pulse laser deposition technology; the buffer layer is annealed before the hexagonal boron nitride film is epitaxially grown so as to further improve the quality of the buffer layer, thereby achieving the purpose of further improving the crystallization quality of the hBN film. The buffer layer is made of transition metal alloy material formed by transition metal such as Cu, Cr, Mo, Ni, W, Mn, Co and the like or combination thereof.
The steps of preparing a transition metal buffer layer on a large lattice mismatch substrate (taking silicon or sapphire as an example) by using a radio frequency magnetron sputtering process and epitaxially growing an hBN film (taking a Low Pressure Chemical Vapor Deposition (LPCVD) technology as an example) are as follows:
(1) at 1X 10-3Sputtering a transition metal or alloy buffer layer on a silicon or sapphire substrate at the temperature of 600-800 ℃ under the vacuum degree of Pa and with the sputtering power of 60-200W, wherein the thickness of the buffer layer is 200-2000 nm (when the buffer layer is made of transition metal alloy, a mixed target can be prepared according to the mass ratio of the transition metal, then sputtering is carried out), and cooling the substrate to room temperature after sputtering is finished;
(2) putting the silicon or sapphire substrate sputtered with the transition metal or alloy buffer layer obtained in the step (1) into an annealing furnace, annealing for 10-30 minutes at 500-900 ℃ to further improve the quality of the transition metal Cr buffer layer, and cooling to room temperature after annealing;
(3) loading the silicon or sapphire substrate with the transition metal or alloy buffer layer obtained in the step (2) into a reaction chamber of an LPCVD system, and vacuumizing to 5 x 10-4Less than Pa, and then introducing BCl under the conditions of 100-300 Pa and 1000-1400 DEG C3And NH3The precursor is used for 30-120 min (hydrogen or nitrogen is used as carrier gas, the flow rate is 100-300 sccm; BCl3The introduction amount of (2) is 10-30 sccm, NH3The introduction amount of (3) is 30-90 sccm), so that an hBN epitaxial thin film layer with the thickness of 1-3 mu m is obtained on the surface of the buffer layer.
The invention has the beneficial effects that the transition metal or alloy buffer layer can be used as a bottom electrode of the hexagonal boron nitride-based vertical device, and the crystallization quality of the epitaxial hBN film on the substrate with large lattice mismatch rate is improved. The method can be expanded to be applied to epitaxial growth of other semiconductor materials.
Drawings
FIG. 1: comparative example 1 process flow schematic of epitaxially growing hBN film (a) and example 1 epitaxially growing hBN film (b); wherein: 1 is a sapphire substrate, 2 is an hBN epitaxial layer, 3 is a sputtered transition metal Cr buffer layer, and 4 is an annealed transition metal Cr buffer layer.
FIG. 2: comparative example 1X-ray diffraction patterns of the epitaxially grown hBN film (a) and the epitaxial hBN film (b) of example 1;
FIG. 3: room temperature raman spectra of comparative example 1 (epitaxially grown hBN film a) and example 1 epitaxial hBN film (b);
Detailed Description
Comparative example 1:
the cleaned sapphire substrate 1 was loaded into an LPCVD reaction chamber, and the reaction chamber pressure was extracted to 1X 10-3Introducing carrier gas (nitrogen gas 200sccm) below Pa, controlling the pressure of the reaction chamber to about 200Pa, heating the substrate to 1400 ℃, and introducing BCl3And NH3，BCl3At a flow rate of 10sccm, NH3At a flow rate of 30sccm, and performing epitaxial growth for 60min, thereby directly growing the hBN layer 2 on the large lattice mismatched sapphire substrate 1, wherein the schematic process of the preparation is shown in fig. 1 (a).
Example 1:
firstly, loading a clean sapphire substrate 1 into a radio frequency magnetron sputtering table, loading a transition metal Cr sputtering target material, adjusting the target distance to 60mm, vacuumizing the system to 5 multiplied by 10-4Introducing argon gas into the reactor, wherein the input flow is 80sccm, the sputtering pressure is adjusted to be 1Pa, the sputtering power is adjusted to be 80W, the sputtering time is 30 minutes, the substrate heating temperature is 700 ℃, and a Cr buffer layer 3 with the thickness of about 1 mu m is obtained on the surface of the sapphire substrate; stopping sputtering, recovering the growth chamber to normal pressure, opening the radio frequency magnetron sputtering platform after the substrate is cooled to room temperature, and taking out the sapphire substrate with the Cr buffer layer.
And annealing the sapphire substrate with the Cr buffer layer in situ for 20min at 850 ℃ to obtain a better-quality and smoother transition metal Cr buffer layer 4, cooling to room temperature after the annealing is finished, and loading the substrate into an LPCVD reaction chamber.
The LPCVD reaction chamber was evacuated to 5X 10-4Pa, adopting nitrogen as carrier gas, controlling the pressure of the reaction chamber to 200Pa, wherein the flow rate of the carrier gas is 100 sccm; heating to 1400 ℃, introducing BCl3And NH3，BCl3At a flow rate of 10sccm, NH3The flow rate of (2) was 30sccm, and the hBN layer 2 was epitaxially grown for 60 min. The preparation method is schematically shown in FIG. 1 (b).
Fig. 2(a) is an X-ray diffraction (XRD) (002) plane diffraction peak of the hBN epitaxial layer 2 on the sapphire substrate 1 prepared in comparative example 1, and fig. 2(b) is an X-ray diffraction (002) plane diffraction peak of the hBN epitaxial layer 2 on the transition metal Cr buffer layer 4 prepared in example 1, and the half-peak widths of the (002) diffraction peaks of the hBN epitaxial layer 2 in comparative example 1 and example 1 are 0.79 ° and 0.40 °, respectively, indicating that the crystalline quality of hBN can be significantly improved by epitaxially growing the hBN layer 2 using the transition metal Cr buffer layer 4.
FIG. 3(a) is a room temperature Raman (Raman) spectrum of the hBN epitaxial layer 2 on the sapphire substrate 1 prepared in comparative example 1, and E of the hBN epitaxial layer 2 can be seen2gThe phonon frequency is 1369.5cm-1For unstressed hBN films, E2gThe phonon frequency is 1366.5cm-1When the film is subjected to in-plane tensile/compressive stress, E is caused2gThe phonon frequency is red-shifted (i.e. E)2gPhonon frequency lower than 1366.5cm-1) Blue shift (i.e. E)2gThe phonon frequency is higher than 1366.5cm-1). E of hBN epitaxial layer 2 prepared in example 12gThe degree of blue shift of phonon frequency is 3.0cm-1The film is subjected to a compressive stress of about 0.699 GPa. FIG. 3(b) is the room temperature Raman spectrum of the hBN epitaxial layer 2 on the transition metal Cr buffer layer 4 prepared in example 1, and E of the hBN epitaxial layer 2 can be seen2gThe phonon frequency is 1366.7cm-1The raman results show E of the hBN epitaxial layer 2 prepared in example 12gThe degree of blue shift of phonon frequency is 0.2cm-1The film is subjected to a compressive stress of about 0.047GPa, which is much less than that of the film in comparative example 1, and E of the hBN epitaxial layer 2 prepared in example 12gThe half-peak width of the phonon vibration peak is 29.3cm-1The width at half maximum of phonon vibration peak of the hBN epitaxial layer 2 prepared by the comparative example 1 is smaller than 46.9cm-1. Therefore, the transition metal buffer layer can effectively reduce the internal stress of the hBN film during heteroepitaxy, and the crystallization quality of the hBN is improved.

Claims (3)

1. A method for improving the crystallization quality of hexagonal boron nitride by using transition metal or alloy as a buffer layer is characterized in that: before growing the hexagonal boron nitride epitaxial film, depositing a transition metal or alloy on a silicon, sapphire or other substrate with larger lattice mismatch as a buffer layer in advance by using magnetron sputtering, electron beam evaporation, pulse laser deposition or thermal evaporation film preparation technology, and then epitaxially growing the hexagonal boron nitride film on the substrate with the buffer layer by adopting chemical vapor deposition, magnetron sputtering or pulse laser deposition technology; the buffer layer is annealed before the hexagonal boron nitride film is epitaxially grown so as to further improve the quality of the buffer layer, thereby achieving the purpose of further improving the crystallization quality of the hBN film.
2. The method of claim 1, wherein the hexagonal boron nitride crystalline quality is enhanced by using a transition metal or alloy as a buffer layer, wherein: the buffer layer is made of Cu, Cr, Mo, Ni, W, Mn, Co or their alloy.
3. The method of claim 1, wherein the hexagonal boron nitride crystalline quality is enhanced by using a transition metal or alloy as a buffer layer, wherein:
(1) is at 1X 10-3Sputtering a transition metal or alloy buffer layer on a silicon or sapphire substrate at the temperature of 600-800 ℃ with the sputtering power of 60-200W under the vacuum degree Pa, wherein the thickness of the buffer layer is 200-2000 nm, and cooling the substrate to room temperature after sputtering is finished;
(2) putting the silicon or sapphire substrate sputtered with the transition metal or alloy buffer layer obtained in the step (1) into an annealing furnace, annealing for 10-30 minutes at 500-900 ℃, and cooling to room temperature after annealing;
(3) loading the silicon or sapphire substrate with the transition metal or alloy buffer layer obtained in the step (2) into a reaction chamber of a low-pressure chemical vapor deposition system, and vacuumizing to 5 x 10-4Less than Pa, and then introducing BCl under the conditions of 100-300 Pa and 1000-1400 DEG C3And NH3The precursor is used for 30-120 min, hydrogen or nitrogen is used as carrier gas, and the flow rate is 100-300 sccm; BCl3The introduction amount of (2) is 10-30 sccm, NH3The introduction amount of the buffer layer is 30-90 sccm, so that a hexagonal boron nitride epitaxial thin film layer with the thickness of 1-3 mu m is obtained on the surface of the buffer layer.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112962082A (en) * 2021-03-15 2021-06-15 吉林大学 Two-dimensional hBN film with magnetron sputtering Cu film as buffer layer and preparation method thereof
CN113089091A (en) * 2021-04-01 2021-07-09 北京化工大学 Boron nitride template and preparation method thereof
CN114075695A (en) * 2020-08-12 2022-02-22 中国科学院半导体研究所 Method for preparing high-stoichiometric-ratio two-dimensional hexagonal boron nitride

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63145778A (en) * 1986-12-08 1988-06-17 Katsumitsu Nakamura Production of drum-shaped hexagonal boron nitride film
CN1369904A (en) * 2001-02-14 2002-09-18 西安电子科技大学 Heteroepitavy technology for growing silicon carbide film on sapphire substrate
CN1825539A (en) * 2005-02-22 2006-08-30 中国科学院半导体研究所 Method for growing non-crack III family nitride on silicon substrate
WO2011127258A1 (en) * 2010-04-07 2011-10-13 Massachusetts Institute Of Technology Fabrication of large-area hexagonal boron nitride thin films
CN103194795A (en) * 2013-04-25 2013-07-10 哈尔滨工业大学 Method for low-cost preparation of large-size monocrystal graphene
CN104313684A (en) * 2014-09-30 2015-01-28 中国科学院半导体研究所 Method for preparing hexagonal boron nitride (h-BN) two-dimensional atomic crystal
CN105669253A (en) * 2016-01-14 2016-06-15 上海大学 Low-temperature low-pressure preparation method of boron nitride coating
CN105861987A (en) * 2016-05-19 2016-08-17 西安电子科技大学 Gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride
US20180040476A1 (en) * 2016-08-08 2018-02-08 Applied Materials, Inc. Low-temperature atomic layer deposition of boron nitride and bn structures
CN108193276A (en) * 2017-12-28 2018-06-22 中国科学院半导体研究所 The method for preparing the single-orientated hexagonal boron nitride two-dimensional atomic crystal of large area
CN108330458A (en) * 2018-02-05 2018-07-27 吉林大学 A kind of p-type hexagonal boron nitride film and preparation method thereof that Zn is adulterated in situ
CN109180026A (en) * 2018-07-26 2019-01-11 吉林大学 The method for preparing sapphire fiber covering using chemical vapor deposition method
US20190097000A1 (en) * 2016-05-12 2019-03-28 Globalwafers Co., Ltd. Direct formation of hexagonal boron nitride on silicon based dielectrics
CN109666913A (en) * 2019-02-26 2019-04-23 吉林大学 A kind of nitridation magnesium film and preparation method thereof

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63145778A (en) * 1986-12-08 1988-06-17 Katsumitsu Nakamura Production of drum-shaped hexagonal boron nitride film
CN1369904A (en) * 2001-02-14 2002-09-18 西安电子科技大学 Heteroepitavy technology for growing silicon carbide film on sapphire substrate
CN1825539A (en) * 2005-02-22 2006-08-30 中国科学院半导体研究所 Method for growing non-crack III family nitride on silicon substrate
WO2011127258A1 (en) * 2010-04-07 2011-10-13 Massachusetts Institute Of Technology Fabrication of large-area hexagonal boron nitride thin films
US20110256386A1 (en) * 2010-04-07 2011-10-20 Massachusetts Institute Of Technology Fabrication of Large-Area Hexagonal Boron Nitride Thin Films
CN103194795A (en) * 2013-04-25 2013-07-10 哈尔滨工业大学 Method for low-cost preparation of large-size monocrystal graphene
CN104313684A (en) * 2014-09-30 2015-01-28 中国科学院半导体研究所 Method for preparing hexagonal boron nitride (h-BN) two-dimensional atomic crystal
CN105669253A (en) * 2016-01-14 2016-06-15 上海大学 Low-temperature low-pressure preparation method of boron nitride coating
US20190097000A1 (en) * 2016-05-12 2019-03-28 Globalwafers Co., Ltd. Direct formation of hexagonal boron nitride on silicon based dielectrics
CN105861987A (en) * 2016-05-19 2016-08-17 西安电子科技大学 Gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride
US20180040476A1 (en) * 2016-08-08 2018-02-08 Applied Materials, Inc. Low-temperature atomic layer deposition of boron nitride and bn structures
CN108193276A (en) * 2017-12-28 2018-06-22 中国科学院半导体研究所 The method for preparing the single-orientated hexagonal boron nitride two-dimensional atomic crystal of large area
CN108330458A (en) * 2018-02-05 2018-07-27 吉林大学 A kind of p-type hexagonal boron nitride film and preparation method thereof that Zn is adulterated in situ
CN109180026A (en) * 2018-07-26 2019-01-11 吉林大学 The method for preparing sapphire fiber covering using chemical vapor deposition method
CN109666913A (en) * 2019-02-26 2019-04-23 吉林大学 A kind of nitridation magnesium film and preparation method thereof

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JUNHUA MENG，ET AL: "《Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)/MgO Thin Films》", 《CRYSTAL GROWTH DISIGN》 *
杨鹏 等: "《化学气相沉积法在Cu-Ni合金衬底上生长多层六方氮化硼》", 《科学通报》 *
邢淑芝: "《立方氮化硼的结构和基本性质》", 《现代交际》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114075695A (en) * 2020-08-12 2022-02-22 中国科学院半导体研究所 Method for preparing high-stoichiometric-ratio two-dimensional hexagonal boron nitride
CN112962082A (en) * 2021-03-15 2021-06-15 吉林大学 Two-dimensional hBN film with magnetron sputtering Cu film as buffer layer and preparation method thereof
CN113089091A (en) * 2021-04-01 2021-07-09 北京化工大学 Boron nitride template and preparation method thereof

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