CN110828291A - GaN/AlGaN heterojunction material based on single crystal diamond substrate and preparation method thereof - Google Patents
GaN/AlGaN heterojunction material based on single crystal diamond substrate and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a GaN/AlGaN heterojunction material based on a single crystal diamond substrate and a preparation method thereof, wherein the method comprises the following steps: selecting a single crystal diamond substrate; generating a graphene layer on the upper surface of the single crystal diamond substrate; growing an AlN nucleating layer on the upper surface of the graphene layer; growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer; growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer; and growing an AlGaN barrier layer on the upper surface of the GaN buffer layer. According to the GaN/AlGaN heterojunction material and the preparation method thereof, the GaN/AlGaN heterojunction material can grow on the single crystal diamond substrate with any crystal face by transferring the graphene onto the single crystal diamond substrate with any crystal face, so that the limitation on the crystal face of the substrate when the GaN material is epitaxially grown on the diamond is broken through, the process difficulty is simplified, and the quality of the heterojunction material is improved.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a GaN/AlGaN heterojunction material based on a single crystal diamond substrate and a preparation method thereof.
Background
The nitride semiconductor material has the advantages of large forbidden band width, high carrier mobility, strong breakdown field and the like, and has huge application potential in the aspects of high-frequency, high-voltage and high-power semiconductor devices. Generally, nitride semiconductor materials are epitaxially grown on Si, sapphire or SiC substrates, but these substrates have low thermal conductivity, resulting in poor heat dissipation of nitride-based semiconductor devices, which severely limits the application of nitride semiconductor devices under high power conditions.
The diamond has the highest thermal conductivity in nature, and is particularly suitable for heat dissipation applications such as heat sinks. If the epitaxial growth of the nitride material on the diamond substrate can be realized, the heat dissipation problem in the high-power application of the nitride material can be solved, and the development of the nitride material and devices is promoted. Kazuyuki Hirama et al, in his paper "Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Surface of Diamond (111)" (Japanese journal of Applied Physics 51(2012)090114), disclose a method of growing AlGaN/GaN heterojunction material directly on a (111) plane Diamond substrate, and a Transistor device made therefrom.
However, in the above-mentioned article, GaN material is epitaxially grown on a (111) plane diamond substrate directly using an AlN nucleation layer grown by MOCVD (metal organic chemical vapor deposition), on one hand, the lattice mismatch between GaN and diamond is large, which results in poor material quality, difficulty in growth, and limitation of the characteristics of the resulting device; on the other hand, the (111) -plane diamond substrate is difficult to grow, has a small size, and increases the overall manufacturing cost of the device.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a GaN/AlGaN heterojunction material based on a single crystal diamond substrate and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
one aspect of the present invention provides a method for preparing a GaN/AlGaN heterojunction material based on a single crystal diamond substrate, comprising:
s1: selecting a single crystal diamond substrate;
s2: generating a graphene layer on the upper surface of the single crystal diamond substrate;
s3: growing an AlN nucleating layer on the upper surface of the graphene layer;
s4: growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer;
s5: growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer;
s6: and growing an AlGaN barrier layer on the upper surface of the GaN buffer layer so as to form the GaN/AlGaN heterojunction material based on the single crystal diamond substrate.
In an embodiment of the present invention, the S1 includes:
selecting single crystal diamond with the thickness of 0.3-1mm and the crystal face of (100), (110) or (111) as a substrate.
In an embodiment of the present invention, the S2 includes:
s21: growing a graphene layer with the thickness of 0.2-0.4nm on a metal substrate;
s22: chemically etching the metal substrate covered with the graphene layer to remove the metal substrate;
s23: and transferring the graphene layer to the single crystal diamond substrate to obtain the single crystal diamond substrate covered with the graphene layer.
In an embodiment of the present invention, the S3 includes:
s31: selecting Al with the mass percent of more than 99.999 percent as a sputtering target material;
s32: selecting nitrogen with the mass percent of more than 99.999% and argon with the mass percent of more than 99.999% as sputtering gases, and simultaneously introducing the two sputtering gases into a sputtering cavity;
s33: and sputtering the upper surface of the graphene layer by using a magnetron sputtering technology to generate the AlN nucleating layer.
In an embodiment of the present invention, the S4 includes:
s41: trimethyl gallium is used as a Ga source, ammonia gas is used as an N source, and the gas is introduced into a vapor deposition reaction chamber;
s42: and growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer by using a metal organic compound chemical vapor deposition technology under the conditions that the pressure of a vapor deposition reaction chamber is 40-60Torr, the substrate temperature is 450-600 ℃, the ammonia gas flow is 3000-5000sccm and the trimethyl gallium flow is 100-200 sccm.
In an embodiment of the present invention, the S5 includes:
s51: trimethyl gallium is used as a Ga source, ammonia gas is used as an N source, and the gas is introduced into a vapor deposition reaction chamber;
s52: growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer by using a metal organic compound chemical vapor deposition technology under the conditions that the pressure of a vapor deposition reaction chamber is 40-60Torr, the substrate temperature is 900-1000 ℃, the ammonia gas flow is 3000-5000sccm and the trimethyl gallium flow is 100-200 sccm.
In an embodiment of the present invention, the S6 includes:
s61: trimethyl gallium is used as a Ga source, trimethyl aluminum is used as an Al source, ammonia gas is used as an N source, and the materials are introduced into a vapor deposition reaction chamber;
s62: growing an AlGaN barrier layer on the upper surface of the GaN buffer layer by using a metal organic compound chemical vapor deposition technology under the conditions that the pressure of a vapor deposition reaction chamber is 40-60Torr, the temperature range of a substrate is 1000-minus-one-1100 ℃, the flow rate of ammonia gas is 3000-minus-one-5000 sccm, the flow rate of trimethyl gallium is 30-60sccm and the flow rate of trimethyl aluminum is 800-minus-one-1000 sccm.
The invention provides a GaN/AlGaN heterojunction material based on a single crystal diamond substrate, which sequentially comprises the single crystal diamond substrate, a graphene layer, an AlN nucleating layer, a low-temperature GaN transition layer, a GaN buffer layer and an AlGaN barrier layer from bottom to top.
In one embodiment of the present invention, the crystal plane of the single crystal diamond substrate is (100) or (110) or (111).
In one embodiment of the present invention, the thickness of the single crystal diamond substrate is 0.3-1mm, the thickness of the graphene layer is 0.2-0.4nm, the thickness of the AlN nucleation layer is 20-100nm, the thickness of the low temperature GaN transition layer is 20-200nm, the thickness of the GaN buffer layer is 0.1-5 μm, and the thickness of the AlGaN barrier layer is 5-100 nm.
Compared with the prior art, the invention has the beneficial effects that:
1. the preparation method provided by the invention transfers a layer of graphene on the single crystal diamond substrate and grows the GaN layer on the graphene layer, so that the stress between the substrate and the GaN layer is reduced, the method capable of growing the GaN/AlGaN heterojunction material on the single crystal diamond substrate with any crystal face is provided, the limitation of the epitaxial gallium nitride material on the diamond on the crystal face of the substrate is broken through, the process difficulty is simplified, and the growth of the gallium nitride heterojunction material with large area and high heat dissipation efficiency is realized.
2. According to the invention, the AlN nucleating layer is grown on the graphene layer by adopting a magnetron sputtering method, so that a high-quality AlN nucleating layer can be grown on the graphene, and the GaN/AlGaN heterojunction material is grown on the AlN nucleating layer by using an MOCVD (metal organic chemical vapor deposition) technology, so that the GaN material grown on the single crystal diamond substrate has the advantages of good heat dissipation, high quality, simple process, low cost and the like.
Drawings
FIG. 1 is a flow chart of a method for preparing a GaN/AlGaN heterojunction material based on a single-crystal diamond substrate according to an embodiment of the invention;
FIG. 2 is a structural diagram of a GaN/AlGaN heterojunction material based on a single-crystal diamond substrate according to an embodiment of the invention.
Detailed Description
The present disclosure is further described with reference to specific examples, but the embodiments of the present disclosure are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a flow chart of a method for preparing a GaN/AlGaN heterojunction material based on a single crystal diamond substrate according to an embodiment of the present invention. The preparation method of this example includes:
s1: selecting a single crystal diamond substrate;
s2: generating a graphene layer on the upper surface of the single crystal diamond substrate;
s3: growing an AlN nucleating layer on the upper surface of the graphene layer;
s4: growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer;
s5: growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer;
s6: and growing an AlGaN barrier layer on the upper surface of the GaN buffer layer to finally form the GaN/AlGaN heterojunction material based on the single crystal diamond substrate.
Further, the S1 includes:
selecting single crystal diamond with the thickness of 0.3-1mm and the crystal face of (100), (110) or (111) as a substrate.
Further, the S2 includes:
s21: growing a graphene layer with the thickness of 0.2-0.4nm on a metal substrate;
s22: chemically etching the metal substrate covered with the graphene layer to remove the metal substrate;
s23: and transferring the graphene layer to a single crystal diamond substrate to obtain the single crystal diamond substrate covered with the graphene layer.
Further, the S3 includes:
s31: selecting Al with the mass percent of more than 99.999 percent as a sputtering target material;
s32: selecting nitrogen with the mass percent of more than 99.999% and argon with the mass percent of more than 99.999% as sputtering gases, and simultaneously introducing the two sputtering gases into a sputtering cavity;
s33: and sputtering the upper surface of the graphene layer by using a magnetron sputtering technology to generate the AlN nucleating layer.
Further, the S4 includes:
s41: trimethyl gallium is used as a Ga source, ammonia gas is used as an N source, and the gas is introduced into a vapor deposition reaction chamber;
s42: growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer by utilizing an MOCVD technology under the conditions that the pressure of a gas-phase precipitation reaction chamber is 40-60Torr, the temperature range of a substrate is 450-600 ℃, the flow rate of ammonia gas is 3000-5000sccm, and the flow rate of trimethyl gallium is 100-200 sccm.
Further, the S5 includes:
s51: trimethyl gallium is used as a Ga source, ammonia gas is used as an N source, and the gas is introduced into a vapor deposition reaction chamber;
s52: growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer by using an MOCVD technology under the conditions that the pressure of the vapor deposition reaction chamber is 40-60Torr, the temperature range of the substrate is 900-1000 ℃, the flow rate of ammonia gas is 3000-5000sccm, and the flow rate of trimethyl gallium is 100-200 sccm.
Further, the S6 includes:
s61: trimethyl gallium is used as a Ga source, trimethyl aluminum is used as an Al source, ammonia gas is used as an N source, and the materials are introduced into a vapor deposition reaction chamber;
s62: growing an AlGaN barrier layer on the upper surface of the GaN buffer layer by using an MOCVD technology under the conditions that the pressure of a vapor deposition reaction chamber is 40-60Torr, the temperature range of a substrate is 1000-minus-one-year 1100 ℃, the flow rate of ammonia gas is 3000-minus-one-year 5000sccm, the flow rate of trimethyl gallium is 30-60sccm, and the flow rate of trimethyl aluminum is 800-minus-one-year 1000 sccm.
The preparation method reduces the stress between the substrate and the GaN layer by transferring one layer of graphene on the single crystal diamond substrate, provides a method for growing the GaN/AlGaN heterojunction material on the single crystal diamond substrate with any crystal face, breaks through the limitation of the epitaxial gallium nitride material on the crystal face of the substrate on the diamond, simplifies the process difficulty, and realizes the growth of the gallium nitride heterojunction material with large area and high heat dissipation efficiency.
Example two
On the basis of the above-described embodiments, this embodiment describes in detail the production method of the embodiment of the present invention, taking as an example the production of a GaN/AlGaN heterojunction material based on a (100) plane single crystal diamond substrate and including a 20nmal n nucleation layer, a 20nm low-temperature GaN transition layer, a 0.1 μm GaN buffer layer, and a 10nm AlGaN barrier layer.
The preparation method of this example includes:
step 1: selecting a single crystal diamond substrate;
the single crystal diamond with the thickness of 0.5mm and the crystal face of (100) is selected as the substrate.
Step 2: generating a graphene layer on an upper surface of a (100) single crystal diamond substrate;
specifically, a graphene layer with the thickness of 0.2mm is grown on a metal substrate by adopting a chemical vapor deposition method; then placing the metal substrate covered with the graphene layer in a mixed solution of 1mol/L ferric chloride and 2mol/L hydrochloric acid according to the volume ratio of 1:2 for 18 hours, and removing the metal substrate; and finally, transferring the graphene layer to a (100) single crystal diamond substrate to obtain the (100) single crystal diamond substrate covered with graphene.
And step 3: growing an AlN nucleating layer on the upper surface of the graphene layer by utilizing a magnetron sputtering process;
specifically, the (100) crystal face single crystal diamond substrate covered with the graphene layer obtained in step 2 of this embodiment is placed in a magnetron sputtering system, nitrogen gas with a mass percentage of more than 99.999% and argon gas with a mass percentage of more than 99.999% are introduced as sputtering gases, Al with a mass percentage of more than 99.999% is used as a sputtering target, and AlN with a thickness of 20nm is sputtered on graphene to form an AlN nucleation layer, wherein, in the sputtering process, the substrate temperature is 650 ℃, the argon gas flow is 5sccm, and the nitrogen gas flow is 10 sccm.
And 4, step 4: growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer;
specifically, the substrate on which the AlN nucleation layer grows is placed in an MOCVD (metal organic chemical vapor deposition) reaction chamber, the temperature of the gas-phase deposition reaction chamber is gradually adjusted to 450 ℃, hydrogen is taken as carrier gas to bring trimethyl gallium as a Ga source, ammonia is simultaneously introduced as an N source, and the pressure in the gas-phase deposition reaction chamber is kept at 40 Torr; and growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer by using an MOCVD technology, wherein in the growth process, the hydrogen flow is 800sccm, the ammonia flow is 3000sccm, the trimethyl gallium flow is 100sccm, the growth time is 10 minutes, and the thickness of the grown low-temperature GaN transition layer is 20 nm.
And 5: growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer;
specifically, the temperature in the MOCVD gas phase precipitation reaction chamber is adjusted to 900 ℃, trimethyl gallium is introduced into the MOCVD gas phase precipitation reaction chamber to be used as a Ga source, ammonia gas is introduced to be used as an N source, and the pressure in the gas phase precipitation reaction chamber is kept at 40 Torr; and growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer by using an MOCVD (metal organic chemical vapor deposition) technology, wherein in the growth process, the hydrogen flow is 800sccm, the ammonia flow is 3000sccm, the trimethyl gallium flow is 100sccm, the growth time is 10 minutes, and the thickness of the grown GaN buffer layer is 100 nm.
Step 6: growing an AlGaN barrier layer on the upper surface of the GaN buffer layer;
specifically, the temperature in an MOCVD gas-phase precipitation reaction chamber is gradually increased to 1000 ℃, trimethyl gallium and trimethyl aluminum are taken in by taking hydrogen as carrier gas to serve as a Ga source and an Al source respectively, ammonia gas is introduced to serve as an N source, the pressure in the gas-phase precipitation reaction chamber is kept at 40Torr, an AlGaN barrier layer is grown on the upper surface of the GaN buffer layer by utilizing the MOCVD technology, wherein in the growth process, the hydrogen flow is 800sccm, the ammonia gas flow is 3000sccm, the trimethyl gallium flow is 30sccm, the trimethyl aluminum flow is 800sccm, the growth time is 1 minute, and the thickness of the grown AlGaN barrier layer is 5 nm.
And 7: and (6) taking the slices.
And taking the GaN/AlGaN heterojunction material of the finally formed (100) crystal plane single crystal diamond substrate out of the MOCVD gas phase precipitation reaction chamber.
EXAMPLE III
In this embodiment, the preparation method of the embodiment of the present invention is described in detail by taking as an example the preparation of a (110) crystal plane based single crystal diamond substrate, a GaN/AlGaN heterojunction material including a 100nm AlN nucleation layer, a 200nm low temperature GaN transition layer, a 0.5 μm GaN buffer layer, and a 100nm AlGaN barrier layer.
The preparation method of this example includes:
step 1: selecting a single crystal diamond substrate;
selecting a monocrystal diamond with the thickness of 0.5mm and the crystal face of (110) as a substrate.
Step 2: generating a graphene layer on an upper surface of a (110) single crystal diamond substrate;
specifically, a 0.3mm graphene layer is grown on a metal substrate by adopting a chemical vapor deposition method; then placing the metal substrate covered with the graphene layer in a mixed solution of 1mol/L ferric chloride and 2mol/L hydrochloric acid according to the volume ratio of 1:1 for 10 hours, and removing the metal substrate; and finally, transferring the graphene layer to a (110) single crystal diamond substrate to obtain the (110) single crystal diamond substrate covered with graphene.
And step 3: growing an AlN nucleating layer on the upper surface of the graphene layer by utilizing a magnetron sputtering process;
specifically, the (110) crystal face single crystal diamond substrate covered with the graphene layer obtained in step 2 of this embodiment is placed in a magnetron sputtering system, nitrogen gas with a mass percentage of more than 99.999% and argon gas with a mass percentage of more than 99.999% are introduced as sputtering gases, Al with a mass percentage of more than 99.999% is used as a sputtering target, and AlN with a thickness of 200nm is sputtered on graphene to form an AlN nucleation layer, wherein, in the sputtering process, the substrate temperature is 700 ℃, the argon gas flow is 5sccm, and the nitrogen gas flow is 10 sccm.
And 4, step 4: growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer;
specifically, the substrate on which the AlN nucleation layer grows is placed in an MOCVD (metal organic chemical vapor deposition) reaction chamber, the temperature of the gas-phase deposition reaction chamber is gradually adjusted to 600 ℃, hydrogen is taken as carrier gas to carry trimethyl gallium as a Ga source, ammonia is simultaneously introduced as an N source, and the pressure in the gas-phase deposition reaction chamber is kept at 60 Torr; and growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer by using an MOCVD technology, wherein in the growth process, the hydrogen flow is 2000sccm, the ammonia flow is 5000sccm, the trimethyl gallium flow is 200sccm, the growth time is 40 minutes, and the thickness of the grown low-temperature GaN transition layer is 200 nm.
And 5: growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer;
specifically, the temperature in the MOCVD gas phase precipitation reaction chamber is adjusted to 1000 ℃, trimethyl gallium is introduced into the MOCVD gas phase precipitation reaction chamber to be used as a Ga source, ammonia gas is introduced to be used as an N source, and the pressure in the gas phase precipitation reaction chamber is kept at 60 Torr; and growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer by using an MOCVD (metal organic chemical vapor deposition) technology, wherein in the growth process, the hydrogen flow is 2000sccm, the ammonia flow is 5000sccm, the trimethyl gallium flow is 200sccm, the growth time is 200 minutes, and the thickness of the grown GaN buffer layer is 5 microns.
Step 6: growing an AlGaN barrier layer on the upper surface of the GaN buffer layer;
specifically, the temperature in an MOCVD gas-phase precipitation reaction chamber is gradually raised to 1100 ℃, trimethyl gallium and trimethyl aluminum are taken in by taking hydrogen as a carrier gas to serve as a Ga source and an Al source respectively, ammonia gas is introduced to serve as an N source, the pressure in the gas-phase precipitation reaction chamber is kept at 60Torr, an AlGaN barrier layer is grown on the upper surface of the GaN buffer layer by utilizing the MOCVD technology, wherein in the growth process, the hydrogen flow is 2000sccm, the ammonia gas flow is 5000sccm, the trimethyl gallium flow is 60sccm, the trimethyl aluminum flow is 1000sccm, the growth time is 20 minutes, and the thickness of the grown AlGaN barrier layer is 100 nm.
And 7: and (6) taking the slices.
And taking the GaN/AlGaN heterojunction material of the finally formed (110) crystal plane single crystal diamond substrate out of the MOCVD gas phase precipitation reaction chamber.
Example four
In this embodiment, the preparation method of the embodiment of the present invention is described in detail by taking as an example the preparation of a (111) crystal plane-based single crystal diamond substrate, a GaN/AlGaN heterojunction material including a 50nm AlN nucleation layer, a 100nm low-temperature GaN transition layer, a 2 μm GaN buffer layer, and a 50nm AlGaN barrier layer.
The preparation method of this example includes:
step 1: selecting a single crystal diamond substrate;
selecting single crystal diamond with the thickness of 1mm and the crystal face of (111) as a substrate.
Step 2: generating a graphene layer on an upper surface of a (111) single crystal diamond substrate;
specifically, a graphene layer is grown on a metal substrate by adopting a chemical vapor deposition method; then placing the metal substrate covered with the graphene layer in a mixed solution of 1mol/L ferric chloride and 2mol/L hydrochloric acid according to the volume ratio of 1:3 for 20 hours, and removing the metal substrate; and finally, transferring the graphene layer to a (111) single crystal diamond substrate to obtain the (111) single crystal diamond substrate covered with graphene.
And step 3: growing an AlN nucleating layer on the upper surface of the graphene layer by utilizing a magnetron sputtering process;
specifically, the (111) crystal face single crystal diamond substrate covered with the graphene layer obtained in step 2 in this embodiment is placed in a magnetron sputtering system, nitrogen with a mass percentage of more than 99.999% and argon with a mass percentage of more than 99.999% are introduced as sputtering gases, Al with a mass percentage of more than 99.999% is used as a sputtering target, and radio frequency magnetron sputtering is adopted to sputter 50nm of AlN on the (100) crystal face single crystal diamond substrate covered with graphene to form an AlN nucleation layer, wherein, in the sputtering process, the substrate temperature is 675 ℃, the argon gas flow is 5sccm, and the nitrogen gas flow is 10 sccm.
And 4, step 4: growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer;
specifically, the substrate on which the AlN nucleation layer grows is placed in an MOCVD (metal organic chemical vapor deposition) reaction chamber, the temperature of the gas-phase deposition reaction chamber is gradually adjusted to 550 ℃, hydrogen is taken as carrier gas to bring trimethyl gallium as a Ga source, ammonia is introduced as an N source, and the pressure in the gas-phase deposition reaction chamber is kept at 50 Torr; and growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer by using an MOCVD technology, wherein in the growth process, the hydrogen flow is 1000sccm, the ammonia flow is 4000sccm, the trimethyl gallium flow is 150sccm, the growth time is 30 minutes, and the thickness of the grown low-temperature GaN transition layer is 100 nm.
And 5: growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer;
specifically, the temperature in the MOCVD vapor phase precipitation reaction chamber is adjusted to 950 ℃, trimethyl gallium is introduced into the MOCVD vapor phase precipitation reaction chamber to be used as a Ga source, ammonia gas is introduced to be used as an N source, and the pressure in the vapor phase precipitation reaction chamber is kept at 50 Torr; and growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer by using an MOCVD technology, wherein the hydrogen flow is 1000sccm, the ammonia flow is 4000sccm, the trimethyl gallium flow is 150sccm, the growth time is 100 minutes, and the thickness of the grown GaN buffer layer is 2 microns.
Step 6: growing an AlGaN barrier layer on the upper surface of the GaN buffer layer;
specifically, the temperature in an MOCVD gas-phase precipitation reaction chamber is gradually increased to 1000 ℃, trimethyl gallium and trimethyl aluminum are taken in by taking hydrogen as a carrier gas to serve as a Ga source and an Al source respectively, ammonia gas is introduced to serve as an N source, the pressure in the gas-phase precipitation reaction chamber is kept at 50Torr, an AlGaN barrier layer is grown on the upper surface of the GaN buffer layer by utilizing the MOCVD technology, wherein the hydrogen flow is 1000sccm, the ammonia flow is 4000sccm, the trimethyl gallium flow is 40sccm, the trimethyl aluminum flow is 900sccm, the growth time is 10 minutes, and the thickness of the grown AlGaN barrier layer is 50 nm.
And 7: and (6) taking the slices.
And taking the GaN/AlGaN heterojunction material of the finally formed (111) crystal plane single crystal diamond substrate out of the MOCVD gas phase precipitation reaction chamber.
EXAMPLE five
The embodiment provides a GaN/AlGaN heterojunction material based on a single crystal diamond substrate, which comprises a single crystal diamond substrate 1, a graphene layer 2, an AlN nucleating layer 3, a low-temperature GaN transition layer 4, a GaN buffer layer 5 and an AlGaN barrier layer 6 which are sequentially arranged. In the present embodiment, the single crystal diamond substrate 1, the graphene layer 2, the AlN nucleation layer 3, the low-temperature GaN transition layer 4, the GaN buffer layer 5, and the AlGaN barrier layer 6 may be prepared by the relevant steps in any one of the above embodiments. The heterojunction material can be applied to the field of high-temperature, high-current and high-power devices
Further, in the present embodiment, the crystal plane of the single crystal diamond substrate (1) is (100) or (110) or (111). The thickness of the single crystal diamond substrate is 0.3-1mm, the thickness of the graphene is 0.2-0.4nm, the thickness of the AlN nucleating layer is 20-100nm, the thickness of the low-temperature GaN transition layer is 20-200nm, the thickness of the GaN buffer layer is 0.1-5 mu m, and the thickness of the AlGaN barrier layer is 5-100 nm.
In the embodiment, the GaN/AlGaN heterojunction material based on the single crystal diamond substrate transfers one layer of graphene on the single crystal diamond substrate, and the AlN nucleating layer grows on the graphene layer, so that the high-quality AlN nucleating layer can grow on the graphene.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A preparation method of GaN/AlGaN heterojunction material based on single crystal diamond substrate is characterized by comprising the following steps:
s1: selecting a single crystal diamond substrate;
s2: generating a graphene layer on the upper surface of the single crystal diamond substrate;
s3: growing an AlN nucleating layer on the upper surface of the graphene layer;
s4: growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer;
s5: growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer;
s6: and growing an AlGaN barrier layer on the upper surface of the GaN buffer layer so as to form the GaN/AlGaN heterojunction material based on the single crystal diamond substrate.
2. The method according to claim 1, wherein the S1 includes:
selecting single crystal diamond with the thickness of 0.3-1mm and the crystal face of (100), (110) or (111) as a substrate.
3. The method according to claim 2, wherein the S2 includes:
s21: growing a graphene layer with the thickness of 0.2-0.4nm on a metal substrate;
s22: chemically etching the metal substrate covered with the graphene layer to remove the metal substrate;
s23: and transferring the graphene layer to the single crystal diamond substrate to obtain the single crystal diamond substrate covered with the graphene layer.
4. The method according to claim 1, wherein the S3 includes:
s31: selecting Al with the mass percent of more than 99.999 percent as a sputtering target material;
s32: selecting nitrogen with the mass percent of more than 99.999% and argon with the mass percent of more than 99.999% as sputtering gases, and simultaneously introducing the two sputtering gases into a sputtering cavity;
s33: and sputtering the upper surface of the graphene layer by using a magnetron sputtering technology to generate the AlN nucleating layer.
5. The method according to claim 1, wherein the S4 includes:
s41: trimethyl gallium is used as a Ga source, ammonia gas is used as an N source, and the gas is introduced into a vapor deposition reaction chamber;
s42: and growing a low-temperature GaN transition layer on the upper surface of the AlN nucleating layer by using a metal organic compound chemical vapor deposition technology under the conditions that the pressure of a vapor deposition reaction chamber is 40-60Torr, the substrate temperature is 450-600 ℃, the ammonia gas flow is 3000-5000sccm and the trimethyl gallium flow is 100-200 sccm.
6. The method according to claim 1, wherein the S5 includes:
s51: trimethyl gallium is used as a Ga source, ammonia gas is used as an N source, and the gas is introduced into a vapor deposition reaction chamber;
s52: growing a GaN buffer layer on the upper surface of the low-temperature GaN transition layer by using a metal organic compound chemical vapor deposition technology under the conditions that the pressure of a vapor deposition reaction chamber is 40-60Torr, the substrate temperature is 900-1000 ℃, the ammonia gas flow is 3000-5000sccm and the trimethyl gallium flow is 100-200 sccm.
7. The method according to claim 1, wherein the S6 includes:
s61: trimethyl gallium is used as a Ga source, trimethyl aluminum is used as an Al source, ammonia gas is used as an N source, and the materials are introduced into a vapor deposition reaction chamber;
s62: growing an AlGaN barrier layer on the upper surface of the GaN buffer layer by using a metal organic compound chemical vapor deposition technology under the conditions that the pressure of a vapor deposition reaction chamber is 40-60Torr, the temperature range of a substrate is 1000-minus-one-1100 ℃, the flow rate of ammonia gas is 3000-minus-one-5000 sccm, the flow rate of trimethyl gallium is 30-60sccm and the flow rate of trimethyl aluminum is 800-minus-one-1000 sccm.
8. A GaN/AlGaN heterojunction material based on a single-crystal diamond substrate prepared according to the preparation method of any one of claims 1 to 7, which is characterized by comprising the single-crystal diamond substrate (1), the graphene layer (2), the AlN nucleation layer (3), the low-temperature GaN transition layer (4), the GaN buffer layer (5) and the AlGaN barrier layer (6) in sequence from bottom to top.
9. The GaN/AlGaN heterojunction material based on a single-crystal diamond substrate according to claim 8, wherein the crystal plane of the single-crystal diamond substrate (1) is (100) or (110) or (111).
10. The GaN/AlGaN heterojunction material based on a single crystal diamond substrate according to claim 9, wherein the thickness of the single crystal diamond substrate (1) is 0.3 to 1mm, the thickness of the graphene layer (2) is 0.2 to 0.4nm, the thickness of the AlN nucleation layer (3) is 20 to 100nm, the thickness of the low temperature GaN transition layer (4) is 20 to 200nm, the thickness of the GaN buffer layer (5) is 0.1 to 5 μm, and the thickness of the AlGaN barrier layer (6) is 5 to 100 nm.
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