CN113130296B - Method for growing gallium nitride on hexagonal boron nitride - Google Patents
Method for growing gallium nitride on hexagonal boron nitride Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 89
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 83
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000006911 nucleation Effects 0.000 claims abstract description 16
- 238000010899 nucleation Methods 0.000 claims abstract description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000011889 copper foil Substances 0.000 claims abstract description 11
- 230000007547 defect Effects 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 238000003780 insertion Methods 0.000 claims abstract description 4
- 230000037431 insertion Effects 0.000 claims abstract description 4
- 238000001816 cooling Methods 0.000 claims abstract description 3
- 230000037303 wrinkles Effects 0.000 claims description 13
- 150000002902 organometallic compounds Chemical class 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 15
- 238000009832 plasma treatment Methods 0.000 description 11
- 239000002390 adhesive tape Substances 0.000 description 10
- 238000001000 micrograph Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000089 atomic force micrograph Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Abstract
The invention discloses a method for growing gallium nitride on hexagonal boron nitride, which adopts a chemical vapor deposition method to grow on copper foil to obtain hexagonal boron nitride; cooling treatment to enable continuous and uniform folds to appear on the surface of the glass; transferring hexagonal boron nitride with folds on the copper foil to other substrates to serve as an insertion layer for growing gallium nitride; treating hexagonal boron nitride folds by using oxygen plasma; growing a low V/III ratio gallium nitride nucleation layer by adopting a metal organic chemical vapor deposition method; and growing a gallium nitride layer with high V/III ratio by adopting a metal organic chemical vapor deposition method. The invention adopts oxygen plasma to treat hexagonal boron nitride folds, defects and atomic steps are formed at the hexagonal boron nitride folds, and the edges of the hexagonal boron nitride folds are taken as nucleation points to laterally grow to form a complete continuous gallium nitride film. The lateral growth process also reduces dislocation in the epitaxial layer, further improves the crystal quality of gallium nitride, and has strong practicability.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and relates to a gallium nitride film growth method based on oxygen plasma treatment of hexagonal boron nitride folds.
Background
Gallium nitride is used as a representative wide forbidden band semiconductor material, is very suitable for preparing optoelectronic devices and microwave radio frequency devices due to excellent photoelectric performance and stability, and has wide prospects in the fields of illumination and display, 5G communication, high-frequency high-power photoelectric equipment and the like.
Most gallium nitride-based devices are fabricated on sapphire, silicon carbide (SiC), silicon (Si) and the like substrates primarily in a heteroepitaxial manner due to the lack of gallium nitride homogeneous substrates. However, due to lattice mismatch and thermal mismatch between the hetero-epitaxial substrate and the epitaxial layer, the generated large residual biaxial stress can cause cracks and even breaks in the gallium nitride material, which affects the crystal quality of gallium nitride and is unfavorable for subsequent device preparation. Obtaining high quality, low defect gallium nitride materials is a key to research.
Hexagonal boron nitride and gallium nitride are group III nitride, and are very suitable for being used as a substrate for gallium nitride growth. The document Snure Michael, et al Journal of Crystal growth 464 (2016) investigated the effect of hexagonal boron nitride surface roughness on dislocation density of gallium nitride films, with the lowest dislocation density of gallium nitride reaching 10 9 cm -1 In order of magnitude, far from the standard of high quality gallium nitride. Document Kong Wei, et al, nature materials 17.11 (2018) uses hexagonal boron nitride to remotely epitaxial gallium nitride. Even when a single layer of hexagonal boron nitride is used, a single crystal gallium nitride thin film having uniform orientation cannot be obtained.
Disclosure of Invention
In order to solve the defect of poor crystal quality of a gallium nitride material on hexagonal boron nitride, the invention provides a method for growing gallium nitride on hexagonal boron nitride, which comprises the following steps:
(1) Growing hexagonal boron nitride on the copper foil by adopting a chemical vapor deposition method;
(2) Cooling the hexagonal boron nitride on the copper foil to enable continuous and uniform wrinkles to appear on the surface of the hexagonal boron nitride;
(3) Transferring hexagonal boron nitride with wrinkles on the copper foil to other substrates; hexagonal boron nitride with folds is used as an insertion layer for growing gallium nitride;
(4) Treating the wrinkles of the hexagonal boron nitride by using oxygen plasma;
(5) Growing a low V/III ratio gallium nitride nucleation layer by adopting a metal organic chemical vapor deposition method;
(6) And growing a gallium nitride layer with high V/III ratio by adopting a metal organic chemical vapor deposition method.
Hexagonal boron nitride has a hexagonal in-plane lattice arrangement, and the layers are combined by weak van der Waals force, so that the hexagonal boron nitride can be used as a substrate for gallium nitride growth. The interaction force between hexagonal boron nitride and epitaxial layers is weaker by two orders of magnitude and better thermal conductivity than conventional heteroepitaxy, without the need to follow exactly the lattice match. This epitaxial approach can alleviate stress and defects caused by lattice and thermal mismatch.
The oxygen plasma forms defects and atomic steps at the edges of the hexagonal boron nitride folds, and the characteristics of high adsorption energy of the defects and the step edges are utilized, and the hexagonal boron nitride folds are taken as nucleation points and then laterally grown to form the complete continuous gallium nitride film. The lateral growth process also reduces dislocations in the epitaxial layer and improves crystal quality.
Preferably, the number of layers of the hexagonal boron nitride is 5-30.
Preferably, the transferred substrate is selected from one of sapphire, silicon carbide and silicon.
Preferably, the hexagonal boron nitride transferred onto the substrate has typical wrinkles, the width is 50-300 nm, the height is 20-40 nm, and the hexagonal boron nitride uniformly covers the surface of the substrate.
Preferably, the oxygen flow is 50-200 sccm, the plasma power is 50-400W, and the etching time is 0.5-5 min.
Preferably, the width of the hexagonal boron nitride folds after the oxygen plasma treatment is 40-200nm, the height is 15-30nm, and defects and atomic steps in the form of N-O and B-O dangling bonds appear on the folds. The treatment by oxygen plasma destroys the perfect surface of hexagonal boron nitride, and etches the fold more easily, so that N-O and B-O dangling bond type defects and atomic steps are generated in space. Nucleation of gallium nitride occurs in the defect and atomic step rich regions, as this is where the surface state changes. This preferential nucleation at the folds facilitates subsequent lateral growth, resulting in a gallium nitride film of low dislocation density.
Preferably, the gallium nitride nucleation layer is grown by the metal organic compound vapor deposition method, the growth temperature is 450-600 ℃, the V/III ratio is 5000-8000, and the growth time is 5-10 min.
Preferably, the metal organic compound vapor deposition method is used for growing the gallium nitride layer, the growth temperature is 1000-1100 ℃, the V/III ratio is 20000-30000, and the growth time is 1.5-3 h.
Preferably, the gallium nitride nucleation layer is nucleated preferentially along the edges of the hexagonal boron nitride folds and then grown laterally to form a flat gallium nitride film.
The invention also provides gallium nitride generated by the gallium nitride growth method. The gallium nitride layer grown by the method is peeled off from the substrate by a mechanical peeling method. The method comprises the following specific steps: and slowly and uniformly adhering the thermal release adhesive tape on the surface of the gallium nitride layer, completely stripping the thermal release adhesive tape adhered with the gallium nitride layer from the substrate layer, tightly adhering the thermal release adhesive tape on a target substrate, and heating the thermal release adhesive tape to ensure that the thermal release adhesive tape loses adhesion, is separated from the gallium nitride layer, and is stripped.
Advantageous effects
Firstly, the hexagonal boron nitride is used as an insertion layer, so that lattice mismatch and thermal mismatch between the substrate and the epitaxial layer are reduced, and the quality of gallium nitride is improved.
Secondly, the hexagonal boron nitride folds are treated by oxygen plasma, and gallium nitride is nucleated on the folds preferentially and then grows sideways to form a continuous film. Lateral growth of gallium nitride also reduces dislocations in the epitaxial layer, further improving the crystal quality of gallium nitride.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a schematic diagram of the structure of the present invention;
FIG. 3 is a scanning electron microscope image of the present invention before and after oxygen plasma treatment of hexagonal boron nitride folds;
FIG. 4 is a graph of X-ray photoelectron spectra before and after oxygen plasma treatment of hexagonal boron nitride corrugations in accordance with the present invention;
FIG. 5 is an atomic force microscope image of a low temperature GaN buffer layer on hexagonal boron nitride according to the invention;
FIG. 6 is a transmission electron microscope image of a cross section of a gallium nitride buffer layer on hexagonal boron nitride according to the invention;
FIG. 7 is an atomic force microscope image of a gallium nitride film on hexagonal boron nitride according to the invention;
FIG. 8 shows E before and after stripping of a grown GaN film on hexagonal boron nitride according to the invention 2 -raman spectrum at high peak position;
FIG. 9 is a scanning electron microscope image of the bottom surface of a stripped gallium nitride film on hexagonal boron nitride according to the invention.
Detailed Description
The following are specific examples of the present invention, and the technical solutions of the present invention are further described, but the present invention is not limited to these examples.
Examples
A method for growing gallium nitride on hexagonal boron nitride, which grows a structure shown in fig. 2 according to the steps shown in fig. 1, comprising the following specific steps:
step one: growing hexagonal boron nitride on the copper foil by adopting a chemical vapor deposition method, wherein the number of layers of the hexagonal boron nitride is 10;
step two: the hexagonal boron nitride on the copper foil is cooled and contracted, continuous and uniform folds appear on the surface, the width is 50-300 nm, the height is 20-40 nm, and the surface of the substrate is uniformly covered;
step three: transferring hexagonal boron nitride with wrinkles on the copper foil onto a substrate;
step four: treating hexagonal boron nitride folds by utilizing oxygen plasma, wherein the oxygen flow is 100 sccm, the plasma power is 200W, and the etching time is 2 min;
referring to fig. 3, a scanning electron microscope image of the present example before and after the oxygen plasma treatment of hexagonal boron nitride is shown. In the figure, a shows a typical morphology of hexagonal boron nitride wrinkles; b graph shows that the hexagonal boron nitride wrinkles tend to flatten after oxygen plasma treatment. The hexagonal boron nitride folds after oxygen plasma treatment have the width of 40-200nm and the height of 15-30nm;
referring to fig. 4, an X-ray photoelectron spectrum of the present embodiment before and after the oxygen plasma treatment of hexagonal boron nitride folds is shown. (a) Panels (a) and (B) show XPS characteristic peaks of N1s and B1s before oxygen plasma treatment of hexagonal boron nitride wrinkles. (c) Graphs (d) and (d) show XPS characteristic peaks of N1s and B1s after oxygen plasma treatment of hexagonal boron nitride wrinkles. Indicating that the hexagonal boron nitride generates N-O bond and B-O bond after oxygen plasma treatment to provide nucleation sites for subsequent gallium nitride growth;
step five: and growing a low V/III ratio gallium nitride nucleation layer by adopting a metal organic chemical vapor deposition method, wherein the growth temperature is 475 ℃, the V/III ratio is 6000, and the growth time is 5 min. The MOCVD technology adopts ammonia gas as a nitrogen source, hydrogen gas or nitrogen gas as a carrier gas, and trimethylgallium as a gallium source;
referring to fig. 5, an atomic force microscope image of a gallium nitride nucleation layer provided in this example is shown; indicating that gallium nitride will nucleate preferentially along hexagonal boron nitride folds;
referring to fig. 6, a cross-sectional transmission electron microscope image of a gallium nitride nucleation layer provided in this example; indicating that a great number of atomic steps exist at the hexagonal boron nitride folds;
step six: growing a gallium nitride layer with high V/III ratio by adopting a metal organic chemical vapor deposition method, wherein the growth temperature is 1070 ℃, the V/III ratio is 25000, and the growth time is 2.5 and h;
referring to fig. 7, an atomic force microscope image of a gallium nitride film provided in this example shows that the gallium nitride surface has clear atomic steps;
step seven: the grown gallium nitride layer is peeled off from the substrate by a mechanical peeling method, and the method comprises the following specific steps: and slowly and uniformly adhering the thermal release adhesive tape on the surface of the gallium nitride layer, completely stripping the thermal release adhesive tape adhered with the gallium nitride layer from the substrate layer, tightly adhering the thermal release adhesive tape on a target substrate, and heating the thermal release adhesive tape to ensure that the thermal release adhesive tape loses adhesion, is separated from the gallium nitride layer, and is stripped.
Referring to FIG. 8, the method is shown before and after stripping of a gallium nitride film grown on hexagonal boron nitride according to the present embodiment 2 Raman spectrum of high peak position. Indicating that the gallium nitride film has very little stress after delamination, approaching a stress-free state (568 cm) -1 ）。
Referring to fig. 9, a scanning electron microscope image of the bottom surface of the gallium nitride film provided in this example shows that the grown gallium nitride film can be peeled off.
According to the gallium nitride growing method, the hexagonal boron nitride folds are treated by oxygen plasma, defects and atomic steps are formed at the hexagonal boron nitride folds, the edges of the hexagonal boron nitride folds are taken as nucleation points, and the complete continuous gallium nitride film is formed by lateral growth. The lateral growth process also reduces dislocation in the epitaxial layer, further improves the crystal quality of gallium nitride, and has strong practicability.
Finally, it should be noted that: the above description is only of the preferred embodiments, and it will be apparent to those skilled in the art that modifications may be made to the embodiments described above, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method for growing gallium nitride on hexagonal boron nitride, comprising the steps of:
(1) Growing hexagonal boron nitride on the copper foil by adopting a chemical vapor deposition method;
(2) Cooling the hexagonal boron nitride on the copper foil to enable continuous and uniform wrinkles to appear on the surface of the hexagonal boron nitride;
(3) Transferring hexagonal boron nitride with wrinkles on the copper foil to other substrates; hexagonal boron nitride with folds is used as an insertion layer for growing gallium nitride;
(4) Treating the wrinkles of the hexagonal boron nitride by using oxygen plasma;
(5) Growing a low V/III ratio gallium nitride nucleation layer by adopting a metal organic chemical vapor deposition method;
(6) And growing a gallium nitride layer with high V/III ratio by adopting a metal organic chemical vapor deposition method.
2. A method of growing gallium nitride on hexagonal boron nitride according to claim 1, wherein the number of layers of hexagonal boron nitride grown in step (1) is from 5 to 30.
3. The method of growing gallium nitride on hexagonal boron nitride of claim 1, wherein the substrate of step (3) is selected from the group consisting of gallium nitride, sapphire, siC, si, alN, siO 2 One of them.
4. A method of growing gallium nitride on hexagonal boron nitride according to claim 1, wherein the corrugations in step (3) have a width of 50-300 a nm a height of 20-40 a nm a uniform coverage of the substrate surface.
5. The method for growing gallium nitride on hexagonal boron nitride according to claim 1, wherein the oxygen flow rate is 50-200 sccm, the plasma power is 50-400W, and the etching time is 0.5-5 min when the wrinkles of hexagonal boron nitride are treated by oxygen plasma in the step (4).
6. A method of growing gallium nitride on hexagonal boron nitride according to claim 1, wherein in step (4) said oxygen plasma treated hexagonal boron nitride is wrinkled with defects and atomic steps in the form of N-O and B-O dangling bonds.
7. The method for growing gallium nitride on hexagonal boron nitride according to claim 1, wherein the gallium nitride nucleation layer is grown in step (5) by metal organic compound vapor deposition, the growth temperature is 450-600 ℃, the V/III ratio is 5000-8000, and the growth time is 5-10 min.
8. The method for growing gallium nitride on hexagonal boron nitride according to claim 1, wherein the gallium nitride layer is grown in step (6) by metal organic compound vapor deposition, the growth temperature is 1000-1100 ℃, the V/III ratio is 20000-30000, and the growth time is 1.5-3 h.
9. A method of growing gallium nitride on hexagonal boron nitride according to claim 6, wherein in step (5) the gallium nitride nucleation layer is nucleated along the edges of the hexagonal boron nitride corrugations and then grown laterally to form a planar gallium nitride film.
10. Gallium nitride grown on hexagonal boron nitride, characterized in that it is produced by a method of growing gallium nitride on hexagonal boron nitride according to one of claims 1 to 9.
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| CN105861987A (en) * | 2016-05-19 | 2016-08-17 | 西安电子科技大学 | Gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride |
| CN110211869A (en) * | 2019-05-28 | 2019-09-06 | 北京大学 | Utilize the method for stress in two-dimentional boron nitride insert layer relaxation nitride epitaxial structure |
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| CN105861987A (en) * | 2016-05-19 | 2016-08-17 | 西安电子科技大学 | Gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride |
| CN110211869A (en) * | 2019-05-28 | 2019-09-06 | 北京大学 | Utilize the method for stress in two-dimentional boron nitride insert layer relaxation nitride epitaxial structure |
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